JPS5525910A - Multiple cold emission cathode - Google Patents

Multiple cold emission cathode

Info

Publication number
JPS5525910A
JPS5525910A JP9780978A JP9780978A JPS5525910A JP S5525910 A JPS5525910 A JP S5525910A JP 9780978 A JP9780978 A JP 9780978A JP 9780978 A JP9780978 A JP 9780978A JP S5525910 A JPS5525910 A JP S5525910A
Authority
JP
Japan
Prior art keywords
insulated film
nea
multiplicity
photo
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9780978A
Other languages
Japanese (ja)
Inventor
Takao Ando
Tokuzo Sukegawa
Ryozo Nishida
Minoru Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HAMAMATSU DENSHI KOGAKU SHIYOUREIKAI
HAMAMATSU DENSHI KOUGAKU SHIYO
Original Assignee
HAMAMATSU DENSHI KOGAKU SHIYOUREIKAI
HAMAMATSU DENSHI KOUGAKU SHIYO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HAMAMATSU DENSHI KOGAKU SHIYOUREIKAI, HAMAMATSU DENSHI KOUGAKU SHIYO filed Critical HAMAMATSU DENSHI KOGAKU SHIYOUREIKAI
Priority to JP9780978A priority Critical patent/JPS5525910A/en
Publication of JPS5525910A publication Critical patent/JPS5525910A/en
Pending legal-status Critical Current

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  • Cold Cathode And The Manufacture (AREA)

Abstract

PURPOSE: To use a multiplicity of cold emission surfaces with negative electron affinity for the camera tube effectively by providing them on a piece of N-type semiconductor substrate controllably and closely.
CONSTITUTION: Ohmic contact metal thin film 2 is provided on the back of N-type silicon semiconductor substrate 1, SiO2 insulated film 3 to make electrons, which proceed from said semiconductor to the NEA faces (electron emission face), produce a concentrating effect is formed on the surface, and a multiplicity of holes the diameter of which are 50μ or less is provided in the insulated film by photo-etching. Also P-type silicon semiconductor layer 5 of from 1 to 5μ thickness is generated on the insulated film 3, respective parts of the semiconductor layer 5 on the holes are separated from each other by photo-etching. The NEA face 6, in which cesium and oxygen are adsorbed to activate itself, with negative electron affinity is formed in the surface the part of which is opposite to the hole.
COPYRIGHT: (C)1980,JPO&Japio
JP9780978A 1978-08-12 1978-08-12 Multiple cold emission cathode Pending JPS5525910A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9780978A JPS5525910A (en) 1978-08-12 1978-08-12 Multiple cold emission cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9780978A JPS5525910A (en) 1978-08-12 1978-08-12 Multiple cold emission cathode

Publications (1)

Publication Number Publication Date
JPS5525910A true JPS5525910A (en) 1980-02-25

Family

ID=14202086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9780978A Pending JPS5525910A (en) 1978-08-12 1978-08-12 Multiple cold emission cathode

Country Status (1)

Country Link
JP (1) JPS5525910A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233560A (en) * 1985-07-26 1987-02-13 コンバツシヨン・エンヂニアリング・インコ−ポレ−テツド High-efficiency separator facility
KR100404171B1 (en) * 1996-12-27 2004-03-18 엘지전자 주식회사 Method for forming pattern on silicon surface having nea characteristic

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233560A (en) * 1985-07-26 1987-02-13 コンバツシヨン・エンヂニアリング・インコ−ポレ−テツド High-efficiency separator facility
KR100404171B1 (en) * 1996-12-27 2004-03-18 엘지전자 주식회사 Method for forming pattern on silicon surface having nea characteristic

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