JPS55125646A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55125646A
JPS55125646A JP3300279A JP3300279A JPS55125646A JP S55125646 A JPS55125646 A JP S55125646A JP 3300279 A JP3300279 A JP 3300279A JP 3300279 A JP3300279 A JP 3300279A JP S55125646 A JPS55125646 A JP S55125646A
Authority
JP
Japan
Prior art keywords
layers
layer
aluminum layer
resistance element
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3300279A
Other languages
Japanese (ja)
Inventor
Susumu Kayama
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3300279A priority Critical patent/JPS55125646A/en
Publication of JPS55125646A publication Critical patent/JPS55125646A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To integrate a miniaturized, high resistance element that it can be controlled conveniently, by laminating an aluminum layer on a predetermined portion of a thin poly-Si layer to form an electrode wire, and selectively remove the aluminum layer. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are formed on a p-type Si substrate 11. Poly-Si layers 141, 142 are provided, and openings are made in the film 13. An n<+> diffusion layers 15, 16 are formed, and the resistance of the layers 141, 142 is set to a low level. A CVDSiO2 film 17 is then formed, and openings are made therein. Non-additive type poly-Si layer 18 and an aluminum layer 19 to which approximately 1% Si is added are formed in layers. The layers 19, 18 are etched in the mentioned order to form electrode wires in the layers 15, 16 and a wire which is to be connected to the wire 142. A part of an aluminum layer 192 is then selectively removed to expose a Si layer 182 and form a high resistance element R having aluminum layers 1921, 1922 as terminal electrodes. Thus, a device, in which a miniaturized high resistance element having a high controllability is integrated, can be obtained. This device can be advantageously used to integrate, and improve the performance of, an enhancement/resistor type static RAM and the like.
JP3300279A 1979-03-20 1979-03-20 Semiconductor device Pending JPS55125646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3300279A JPS55125646A (en) 1979-03-20 1979-03-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3300279A JPS55125646A (en) 1979-03-20 1979-03-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55125646A true JPS55125646A (en) 1980-09-27

Family

ID=12374630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3300279A Pending JPS55125646A (en) 1979-03-20 1979-03-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55125646A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186358A (en) * 1981-05-11 1982-11-16 Seiko Epson Corp Semiconductor device
JPS57211252A (en) * 1981-06-22 1982-12-25 Fujitsu Ltd Manufacture of smiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186358A (en) * 1981-05-11 1982-11-16 Seiko Epson Corp Semiconductor device
JPS57211252A (en) * 1981-06-22 1982-12-25 Fujitsu Ltd Manufacture of smiconductor device
JPS6360540B2 (en) * 1981-06-22 1988-11-24

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