JPS54887A - Two-way thyristor - Google Patents

Two-way thyristor

Info

Publication number
JPS54887A
JPS54887A JP6598577A JP6598577A JPS54887A JP S54887 A JPS54887 A JP S54887A JP 6598577 A JP6598577 A JP 6598577A JP 6598577 A JP6598577 A JP 6598577A JP S54887 A JPS54887 A JP S54887A
Authority
JP
Japan
Prior art keywords
way thyristor
region
thyristor
toavoid
pnpn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6598577A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Hiroshi Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6598577A priority Critical patent/JPS54887A/en
Publication of JPS54887A publication Critical patent/JPS54887A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: Toavoid the element breakage when a turn-off is given by the break-over voltage, by forming two thyristor regions comprising the PNPN-structure within the same semiconductor substrate in reverse parallel to each other and securing a higher impurity concentration of the N-type base region of one side than that of the region of the other side.
COPYRIGHT: (C)1979,JPO&Japio
JP6598577A 1977-06-03 1977-06-03 Two-way thyristor Pending JPS54887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6598577A JPS54887A (en) 1977-06-03 1977-06-03 Two-way thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6598577A JPS54887A (en) 1977-06-03 1977-06-03 Two-way thyristor

Publications (1)

Publication Number Publication Date
JPS54887A true JPS54887A (en) 1979-01-06

Family

ID=13302803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6598577A Pending JPS54887A (en) 1977-06-03 1977-06-03 Two-way thyristor

Country Status (1)

Country Link
JP (1) JPS54887A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196569A (en) * 1981-05-27 1982-12-02 Toshiba Corp Bidirectional thyristor
JPS58118151A (en) * 1982-01-06 1983-07-14 Toshiba Corp Bidirectional semiconductor switch element
US5429953A (en) * 1992-07-15 1995-07-04 Texas Instruments Incorporated Method of forming solid state suppressors with concave and diffused substitution regions
JP2011249602A (en) * 2010-05-27 2011-12-08 Shindengen Electric Mfg Co Ltd Reverse blocking thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196569A (en) * 1981-05-27 1982-12-02 Toshiba Corp Bidirectional thyristor
JPS58118151A (en) * 1982-01-06 1983-07-14 Toshiba Corp Bidirectional semiconductor switch element
US5429953A (en) * 1992-07-15 1995-07-04 Texas Instruments Incorporated Method of forming solid state suppressors with concave and diffused substitution regions
JP2011249602A (en) * 2010-05-27 2011-12-08 Shindengen Electric Mfg Co Ltd Reverse blocking thyristor

Similar Documents

Publication Publication Date Title
JPS56165371A (en) Semiconductor device
JPS51126761A (en) Schottky barrier type semi-conductor unit
JPS5356972A (en) Mesa type semiconductor device
JPS54887A (en) Two-way thyristor
JPS5417666A (en) Lead frame
JPS5382179A (en) Field effect transistor
JPS546480A (en) Semiconductor device
JPS5439579A (en) Semiconductor device of field effect type
JPS5314586A (en) Mis type semiconductor memory device
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
JPS5348670A (en) Electrode structure of semiconductor element
JPS5227259A (en) Zero voltage switching circuit
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS5214377A (en) Semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS52153385A (en) Semiconductor device
JPS5316587A (en) Semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5269586A (en) Semiconductor integrated circuit
JPS5376760A (en) Semiconductor rectifying device
JPS5373990A (en) Semiconductor device
JPS5387183A (en) Planar type semiconductor device
JPS527684A (en) Integrated semiconductor devices
JPS5354989A (en) Semiconductor device
JPS52137275A (en) Separation of semiconductor elements