JPS5346285A - Mesa type high breakdown voltage semiconductor device - Google Patents

Mesa type high breakdown voltage semiconductor device

Info

Publication number
JPS5346285A
JPS5346285A JP12108776A JP12108776A JPS5346285A JP S5346285 A JPS5346285 A JP S5346285A JP 12108776 A JP12108776 A JP 12108776A JP 12108776 A JP12108776 A JP 12108776A JP S5346285 A JPS5346285 A JP S5346285A
Authority
JP
Japan
Prior art keywords
breakdown voltage
high breakdown
semiconductor device
type high
voltage semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12108776A
Other languages
Japanese (ja)
Inventor
Yutaka Misawa
Tomoyuki Tanaka
Masahiro Okamura
Hiroshi Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12108776A priority Critical patent/JPS5346285A/en
Priority to DE19772745300 priority patent/DE2745300C2/en
Publication of JPS5346285A publication Critical patent/JPS5346285A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To enable a high breakdown voltage to be obtained even at shallow mesa grooves by making small the impurity concentration gradient near PN junctions in a diode, transistor, thyristor, etc. having mesa type PN junctions and making shallow the mesa grooves.
COPYRIGHT: (C)1978,JPO&Japio
JP12108776A 1976-10-08 1976-10-08 Mesa type high breakdown voltage semiconductor device Pending JPS5346285A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12108776A JPS5346285A (en) 1976-10-08 1976-10-08 Mesa type high breakdown voltage semiconductor device
DE19772745300 DE2745300C2 (en) 1976-10-08 1977-10-07 Mesa semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12108776A JPS5346285A (en) 1976-10-08 1976-10-08 Mesa type high breakdown voltage semiconductor device

Publications (1)

Publication Number Publication Date
JPS5346285A true JPS5346285A (en) 1978-04-25

Family

ID=14802535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12108776A Pending JPS5346285A (en) 1976-10-08 1976-10-08 Mesa type high breakdown voltage semiconductor device

Country Status (2)

Country Link
JP (1) JPS5346285A (en)
DE (1) DE2745300C2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3151141A1 (en) * 1981-12-23 1983-06-30 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT WITH HIGH IMPACT-RESISTANCE
DE69324119T2 (en) * 1992-12-21 1999-08-05 Stmicroelectronics, Inc., Carrollton, Tex. Diode structure with PN junction
JPH06342902A (en) * 1993-06-01 1994-12-13 Komatsu Ltd High breakdown strength semiconductor device
US5880511A (en) * 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
CN104900692A (en) * 2015-06-15 2015-09-09 江苏东晨电子科技有限公司 Mesa thyristor and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439417B2 (en) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
CH426020A (en) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Method for producing the semiconductor element of a surge voltage-resistant semiconductor valve, as well as a semiconductor element produced with the aid of this method
US3414780A (en) * 1966-01-06 1968-12-03 Int Rectifier Corp High voltage semiconductor device with electrical gradient-reducing groove
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion

Also Published As

Publication number Publication date
DE2745300C2 (en) 1984-05-17
DE2745300A1 (en) 1978-04-13

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