JPS54131887A - Manufacture of bipolar cmos-type integrated circuit - Google Patents

Manufacture of bipolar cmos-type integrated circuit

Info

Publication number
JPS54131887A
JPS54131887A JP3883878A JP3883878A JPS54131887A JP S54131887 A JPS54131887 A JP S54131887A JP 3883878 A JP3883878 A JP 3883878A JP 3883878 A JP3883878 A JP 3883878A JP S54131887 A JPS54131887 A JP S54131887A
Authority
JP
Japan
Prior art keywords
layer
diffusion
opening
manufacture
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3883878A
Other languages
Japanese (ja)
Inventor
Fumitaka Yokoyama
Hitoshi Tsubone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3883878A priority Critical patent/JPS54131887A/en
Publication of JPS54131887A publication Critical patent/JPS54131887A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To shorten the time of the diffusion process by forming the same conducting regions featuring different depths in the case of manufacture of the bipolar CMOSIC. CONSTITUTION:N<+> buried layer 4 and 5 are provided to P<->Si substrate 1 with lamination of N<-> epitaxial layer 6 and then covered with SiO27. Selective opening 8 and 9 are provided to film 7, and the B ion is injected with the 15-hour treatment applied at 1200 deg.C. Thus, the B sent from opening 8 reaches substrate 1 to form isolation layer 2. While the B from opening 9 does not go further than layer 5 due to the blocking effect of N<+> buried layer 5 exoanded to the upper part by the diffusion temperature, thus P layer 10 being formed. After this, the conventional method is applied to form the base and emitter layers 11 and 12 of the bipolar transistor plus the source and drain 13 and 14 of p- and n-channel MOSFET's each to complete the diffusion process. With proper control of the depths of the epitaxial and buried layers as well as the density and diffusion conditions, the diffusion layers of different depths can be formed at one time with a high accuracy.
JP3883878A 1978-04-04 1978-04-04 Manufacture of bipolar cmos-type integrated circuit Pending JPS54131887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3883878A JPS54131887A (en) 1978-04-04 1978-04-04 Manufacture of bipolar cmos-type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3883878A JPS54131887A (en) 1978-04-04 1978-04-04 Manufacture of bipolar cmos-type integrated circuit

Publications (1)

Publication Number Publication Date
JPS54131887A true JPS54131887A (en) 1979-10-13

Family

ID=12536341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3883878A Pending JPS54131887A (en) 1978-04-04 1978-04-04 Manufacture of bipolar cmos-type integrated circuit

Country Status (1)

Country Link
JP (1) JPS54131887A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619653A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS57115444A (en) * 1981-01-06 1982-07-17 Japan Synthetic Rubber Co Ltd Thermoplastic resin composition for expansion molding
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS5968962A (en) * 1982-10-13 1984-04-19 Hitachi Ltd Semiconductor device
US5043788A (en) * 1988-08-26 1991-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with functional portions having different operating voltages on one semiconductor substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619653A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS57115444A (en) * 1981-01-06 1982-07-17 Japan Synthetic Rubber Co Ltd Thermoplastic resin composition for expansion molding
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS5968962A (en) * 1982-10-13 1984-04-19 Hitachi Ltd Semiconductor device
JPH056350B2 (en) * 1982-10-13 1993-01-26 Hitachi Ltd
US5043788A (en) * 1988-08-26 1991-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with functional portions having different operating voltages on one semiconductor substrate

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