JPS53108291A - Integration implating circuit - Google Patents

Integration implating circuit

Info

Publication number
JPS53108291A
JPS53108291A JP48078A JP48078A JPS53108291A JP S53108291 A JPS53108291 A JP S53108291A JP 48078 A JP48078 A JP 48078A JP 48078 A JP48078 A JP 48078A JP S53108291 A JPS53108291 A JP S53108291A
Authority
JP
Japan
Prior art keywords
implating
integration
circuit
integration implating
implating circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48078A
Other languages
English (en)
Inventor
Rubenouitsuchi Naz Arutashiesu
Yakoureuitsuchi Fuyachiesurafu
Nikoraeuitsuchi Kokin Biruyamu
Iwanouitsuchi Suradok Bikutoru
Warenchinouitsuchi Benk Porisu
Warerieuitsuchi Wajiimu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441385A external-priority patent/SU602055A1/ru
Priority claimed from SU772537101A external-priority patent/SU646391A1/ru
Application filed by Individual filed Critical Individual
Publication of JPS53108291A publication Critical patent/JPS53108291A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225Charge injection in static induction transistor logic structures [SITL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1029Channel region of field-effect devices of field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP48078A 1977-01-06 1978-01-06 Integration implating circuit Pending JPS53108291A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU772441385A SU602055A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент
SU772537101A SU646391A1 (ru) 1977-11-01 1977-11-01 Полевой транзистор
SU2537006 1977-11-11

Publications (1)

Publication Number Publication Date
JPS53108291A true JPS53108291A (en) 1978-09-20

Family

ID=27356306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48078A Pending JPS53108291A (en) 1977-01-06 1978-01-06 Integration implating circuit

Country Status (9)

Country Link
JP (1) JPS53108291A (ja)
CH (1) CH616276A5 (ja)
CS (1) CS199407B1 (ja)
DD (1) DD136907A1 (ja)
DE (1) DE2800335A1 (ja)
FR (1) FR2377123A1 (ja)
GB (1) GB1565918A (ja)
NL (1) NL7800046A (ja)
PL (1) PL119495B1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS5655559U (ja) * 1979-10-08 1981-05-14

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796C2 (de) * 1973-04-30 1982-07-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS574425B2 (ja) * 1978-09-12 1982-01-26
JPS5655559U (ja) * 1979-10-08 1981-05-14
JPS573651Y2 (ja) * 1979-10-08 1982-01-22

Also Published As

Publication number Publication date
DD136907A1 (de) 1979-08-01
NL7800046A (nl) 1978-07-10
PL119495B1 (en) 1982-01-30
CS199407B1 (en) 1980-07-31
FR2377123A1 (fr) 1978-08-04
CH616276A5 (en) 1980-03-14
DE2800335A1 (de) 1978-07-13
FR2377123B1 (ja) 1980-05-16
GB1565918A (en) 1980-04-23
PL203827A1 (pl) 1978-10-23

Similar Documents

Publication Publication Date Title
GB1550600A (en) Integrated circuit
GB2000618B (en) Integrated circuit structure
JPS53128240A (en) Integrated circuit
GB2007055B (en) Circuit arrangement
JPS5416961A (en) Decoupling circuit
JPS5394160A (en) Muutuning circuit
JPS5416960A (en) Decoupling circuit
JPS53114072A (en) Multilayer circuit
JPS5477037A (en) Selffgate circuit
JPS53110444A (en) Ladderrtype circuit
JPS53111287A (en) Integration logic circuit
JPS53105334A (en) Nonnlinear calculating circuit
JPS5395225A (en) Switchinggtype constanttcurrent circuit
JPS53108291A (en) Integration implating circuit
GB2000396B (en) Transverter circuit
JPS5436980A (en) Meterrdriving circuit
JPS5449101A (en) Supperssed circuit
JPS541874A (en) Circuit parts
GB2025715B (en) Lighting circuit
JPS5455302A (en) Interface circuit
JPS5423977A (en) Contacttswitch circuit
GB2011220B (en) Switsching circuit
JPS53128914A (en) Squelch circuit
JPS5426470A (en) Circuit device
JPS5426604A (en) Privacy circuit