JPS5244579A - Process for production of mos type semiconductor device - Google Patents

Process for production of mos type semiconductor device

Info

Publication number
JPS5244579A
JPS5244579A JP50120984A JP12098475A JPS5244579A JP S5244579 A JPS5244579 A JP S5244579A JP 50120984 A JP50120984 A JP 50120984A JP 12098475 A JP12098475 A JP 12098475A JP S5244579 A JPS5244579 A JP S5244579A
Authority
JP
Japan
Prior art keywords
mos type
production
semiconductor device
type semiconductor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50120984A
Other languages
Japanese (ja)
Other versions
JPS5518054B2 (en
Inventor
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50120984A priority Critical patent/JPS5244579A/en
Publication of JPS5244579A publication Critical patent/JPS5244579A/en
Publication of JPS5518054B2 publication Critical patent/JPS5518054B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To make insulation and isolation of a transistor by using an SiO2 film to reduce the junction capacitance with an Si substrate, thereby achieving higher speed of a MOS type transistor.
COPYRIGHT: (C)1977,JPO&Japio
JP50120984A 1975-10-06 1975-10-06 Process for production of mos type semiconductor device Granted JPS5244579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50120984A JPS5244579A (en) 1975-10-06 1975-10-06 Process for production of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50120984A JPS5244579A (en) 1975-10-06 1975-10-06 Process for production of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5244579A true JPS5244579A (en) 1977-04-07
JPS5518054B2 JPS5518054B2 (en) 1980-05-16

Family

ID=14799890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50120984A Granted JPS5244579A (en) 1975-10-06 1975-10-06 Process for production of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5244579A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
JPS58106868A (en) * 1981-12-18 1983-06-25 Hitachi Ltd Insulated gate type field-effect semiconductor device and manufacture thereof
US5562558A (en) * 1993-04-26 1996-10-08 Kubota; Masao Chain

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
JPH0123949B2 (en) * 1979-06-18 1989-05-09 Hitachi Ltd
JPS58106868A (en) * 1981-12-18 1983-06-25 Hitachi Ltd Insulated gate type field-effect semiconductor device and manufacture thereof
US5562558A (en) * 1993-04-26 1996-10-08 Kubota; Masao Chain

Also Published As

Publication number Publication date
JPS5518054B2 (en) 1980-05-16

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