JPH11325821A - Stage controlling method and aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize pattern transfer of high resolution from a reticle to a wafer by eliminating effect of vibration of a fixed member upon position control of a reticle stage and a wafer stage. SOLUTION: An aligner 10 which projects and transfers a pattern image on a reticle 11 via a projection optical system is provided with stages 13, 17 which can be moved retaining a mask and a wafer, and interferometer systems 21, 31 measuring the respective positions of the stages. The respective interferometer systems are constituted of moving mirrors 22, 32 fixed on the respective stages, fixed mirrors 25, 35 which are fixed on a holding member holding the projection optical system via moving mechanisms 23, 33, and interferometers 26, 36 which measure relative positions between the fixed mirrors and the moving mirrors for controlling the stages. A holding mechanism detects vibration of a fixed member with sensors 24, 34, cancels the vibration on the basis of the detected result, and moves the fixed mirrors in such a manner that the fixed mirrors hold specified positions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and more particularly, to an exposure apparatus used for manufacturing a fine structure such as a semiconductor integrated circuit or a liquid crystal display element by using a photolithography technique. It is.

[0002]

2. Description of the Related Art In a projection exposure apparatus, a pattern image of a photomask or a reticle (hereinafter, collectively referred to as a reticle) is irradiated with an exposure beam to form a wafer on which a photosensitive material is applied through a projection optical system. And a shot area on a glass substrate or the like (hereinafter collectively referred to as a reticle), whereby the pattern image is enlarged or reduced and transferred to the substrate in a desired size.

In recent years, a step-and-repeat type projection exposure apparatus has been used as such a projection exposure apparatus. In this step-and-repeat projection exposure apparatus, a wafer is placed on a two-dimensionally movable wafer stage, and the reticle pattern is moved (stepped) by a predetermined shot on the wafer. The area is exposed. On the other hand, the reticle is held on a reticle stage movably arranged, and when the exposure of one reticle is completed, the reticle is replaced with the next reticle, and the pattern image of the replaced reticle is replaced with the corresponding shot on the substrate. The area is exposed. In this way, the exposure and exchange of the reticle are repeated, so that all the required pattern images are exposed on the substrate, and the pattern transfer to one substrate is completed.

In a projection exposure apparatus, a pattern image of a reticle is enlarged / reduced via a projection lens of a lens barrel provided between a reticle stage and a wafer stage.
Generally, the position of a reticle stage is controlled using a laser interferometer with a fixed mirror attached to the lens barrel as a reference point. That is, the distance from the laser interferometer to the movable mirror attached to the reticle stage is measured based on the distance between the laser interferometer and the fixed mirror, and the reticle stage is controlled by the reticle stage control system according to the measurement result. It is moved and controlled to an appropriate position. Also, with respect to the wafer stage, the distance from the laser interferometer to the moving mirror attached to the wafer stage is measured based on the distance between another laser interferometer and another fixed mirror, and the wafer stage control system is controlled. Controls its position. By this position control, the correspondence between the reticle position and the wafer position is precisely performed on the order of nm, and the pattern image on the reticle is accurately exposed at a predetermined position on the wafer.

[0005]

As described above, in a projection exposure apparatus, very high precision is required for controlling the position of a reticle stage and a wafer stage. In the case where the vibration occurs, even if it is a very small vibration, the influence on the pattern transfer accuracy is significant. That is, in the conventional projection exposure apparatus, when the fixed mirror vibrates along with the vibration of the lens barrel, the vibration also affects the movement of the reticle stage and the wafer stage, and the positioning of the reticle and the wafer becomes unstable. The burden on control was heavy. In addition, if the fixed mirror vibrates during exposure, the reticle stage and wafer stage move without correcting the positional deviation of the fixed mirror, and the pattern image transferred to the wafer will be blurred. There has been a problem that it is not easy to obtain a high linear density and a high resolution of an increasing pattern.

[0006]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a reference mirror (fixed mirror) serving as a reference for position control of a reticle stage or a wafer stage, or a reference mirror attached thereto. It is an object of the present invention to provide an exposure apparatus in which, even if a fixed member such as a mounted lens barrel vibrates, the position control of each stage is not affected by the vibration or the influence is extremely suppressed. Is the purpose.

A stage control method according to the present invention includes a movable mirror provided on a stage on which an object such as a reticle or a wafer is mounted and moved, and a reference mirror attached to a predetermined fixed member such as a lens barrel. A stage control method for controlling the movement of the stage while measuring the position of the stage using an interferometer system.In order to solve the above-described problem, information on vibration of the reference mirror is detected. The reference mirror is moved with respect to the fixed member based on the detection result (corresponding to the characteristic of claim 1). In this case, the reference mirror moves so as to cancel the vibration of the fixed member, thereby reducing the influence of the vibration of the fixed member on the position control of the stage.

An exposure apparatus according to the present invention is an exposure apparatus for exposing the substrate by projecting an image of a pattern of a mask onto the substrate via a projection optical system, and holding and moving the mask or the substrate. A stage, an interferometer system for measuring the position of the stage having a movable mirror provided on the stage and a reference mirror attached to a predetermined fixed member, and the reference for displacement of the fixed member. A holding mechanism for holding the mirror at a substantially constant position (corresponding to the characteristic of claim 2). Since the reference mirror is held at a fixed position by this holding mechanism, the influence of the vibration of the fixed member on the position control of the stage can be extremely suppressed.

The holding mechanism has a moving mechanism for moving the reference mirror with respect to the fixed member (corresponding to the characteristic of claim 3), and moves the reference mirror in response to vibration of the fixed member. (Corresponding to claim 4). Also,
The holding mechanism has a sensor for detecting vibration information of the fixed member, and the moving mechanism can move the reference mirror based on a detection result of the sensor (corresponding to claim 5). . The sensor detects at least one of displacement and acceleration of the fixed member as the vibration information (corresponding to claim 6). Further, the fixing member,
It may be a lens barrel that supports the projection optical system (corresponding to claim 7). Further, the substrate is scanned and exposed by synchronously moving the mask and the substrate (corresponding to claim 8).

An exposure apparatus according to the present invention is an exposure apparatus for transferring a mask pattern onto a substrate. The exposure apparatus is mounted on a stage capable of holding and moving the mask or the substrate and a predetermined fixing member. A control system that controls the position of the stage with reference to the position of the reference member; and a holding mechanism that holds the reference member at a substantially constant position with respect to the displacement of the fixed member. .

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view of an embodiment of a projection exposure apparatus according to the present invention. In this embodiment, a step-and-repeat type reduction projection exposure apparatus (stepper:
Hereinafter, simply referred to as an exposure apparatus) 10 is taken as an example.

The exposure apparatus 10 includes an illumination system 12 for exposing a reticle 11, a reticle stage 13 for holding the reticle 11, and a wafer serving as a photosensitive substrate by using an image of a pattern (original) 14 formed on the reticle 11. A lens barrel 16 including a projection optical system (projection lens) that projects onto
A wafer stage 17 that holds the wafer 15 and is two-dimensionally movable in a reference plane (XY plane) and is rotatable within a predetermined angle range; and an alignment mark ( Off-axis type alignment microscope 18 for detecting a wafer mark), a reticle stage drive system 20 for moving the reticle stage 13 using a linear motor or the like, and a laser interferometer system 21 for measuring the position and rotation of the reticle stage 13 When,
A wafer stage drive system 30 that moves the wafer stage 17 using a linear motor or the like; a laser interferometer system 31 that measures the position and rotation of the wafer stage 17;
A control device 40 including a minicomputer that controls the entire device as a whole is provided.

The illumination system 12 includes a light source such as a mercury lamp and an excimer laser, a shutter, a blind, an input lens, a fly-eye lens, a relay lens, a main condenser lens (all not shown), and the like.

The illumination system 12 is provided with a pattern 14 on the pattern forming surface of the reticle 11 by exposure illumination light from a light source.
Are illuminated with a uniform intensity distribution. Here, the illumination light for exposure is monochromatic light (or quasi-monochromatic light), and its wavelength (exposure wavelength) is, for example, 365 nm of a mercury emission line (i-line) or 248 nm of a KrF excimer laser.

A reticle 14 is provided on the reticle stage 13.
Is fixed by vacuum suction or the like. The reticle stage 13
It is moved in the direction (the horizontal direction on the paper surface in FIG. 1), the Y direction (the direction perpendicular to the paper surface in FIG. 1), and the θ direction (the rotation direction in the XY plane) and is minutely controlled.

The projection lens of the lens barrel 16 has its optical axis in the Z-axis direction perpendicular to the moving surface of the reticle stage 13,
When the pattern 14 is transferred to the wafer 15, a predetermined reduction magnification is given. When the reticle 11 is illuminated with uniform illumination by the illumination system 12 in a state where the pattern 14 of the reticle 11 and the shot area of the wafer 15 are aligned (aligned) via the alignment microscope 18, the pattern 14 is The image is reduced at a predetermined reduction magnification by the projection lens of the lens barrel 16 and projected onto the photoresist-coated wafer 15, and a reduced image of the pattern is formed on each shot area (for example, each LSI chip area) on the wafer 15. It is formed.

The wafer 15 is fixed on a wafer stage 17 via a wafer holder. Wafer stage 17
Is moved in the X direction, the Y direction, and the θ direction by the wafer stage drive system 30 and is minutely controlled. Note that a reference plate 19 is fixed on the wafer stage 17 so that its surface is at the same height as the surface of the wafer W. On the surface of the reference plate 19, various reference marks including a reference mark used for baseline measurement or the like are formed.

The alignment microscope 18 comprises a lens barrel 18
Is fixed to one side of the projection lens in the Y-pong direction, and an image processing type is used in the present embodiment. The alignment microscope 18 includes a light source that emits broadband illumination light such as a halogen lamp, an objective lens, an index plate,
It is configured to include an image sensor such as a CD, a signal processing circuit, an arithmetic circuit, and the like (all not shown). The illumination light emitted from the light source of the alignment microscope 18 passes through the objective lens inside the alignment microscope 18 and is irradiated on the wafer 15 (or the reference plate 19). Then, the reflected light from the wafer mark area (not shown) on the surface of the wafer 15 returns to the alignment microscope 18 and sequentially passes through the objective lens and the index plate, and the image of the wafer mark on an imaging surface such as a CCD.
And an image of the index on the index plate is formed. The photoelectric conversion signals of these images are processed by a signal processing circuit, and the arithmetic circuit calculates the relative position between the wafer mark and the index.

Next, the laser interferometer systems 21 and 3
1 will be described.

The laser interferometer system 21 includes a moving mirror 22 fixed to the reticle stage 13 and a moving mechanism 2 including an actuator fixed above the side surface of the lens barrel 16.
The laser interferometer 26 includes a fixed mirror 25 supported by the lens barrel 16 via the lens 3. The laser interferometer 26 projects a laser beam onto the movable mirror 22 and the fixed mirror 25, respectively, and receives the respective reflected light to thereby adjust the position and rotation of the reticle stage 13 relative to the movable mirror 22 and the fixed mirror 25. Measure as a relationship.

The moving mechanism 23 is provided with a sensor (by an accelerometer, a displacement meter, etc.) 24 for detecting vibration (or displacement) of the lens barrel 16 at the position where the moving mechanism 23 is mounted. The moving mechanism 23 controls the position of the fixed mirror 25 or its movement based on the measurement result of the sensor 24,
The fixed mirror 25 is maintained at a substantially constant position regardless of the vibration of the lens barrel 16. In other words, when the lens barrel 16 vibrates, the moving mechanism 25 moves the fixed mirror 25 so as to cancel the displacement caused by the vibration of the lens barrel 16. Thereby, even if the lens barrel 16 vibrates, the vibration is canceled,
The position of the fixed mirror 25 does not change due to the vibration, and the fixed mirror 25 is maintained so as to be seen when viewed from the outside. Therefore, the position control of the reticle stage 16 is not affected by the vibration of the lens barrel 16, and after the reticle stage 16 is once positioned,
A fixed position can be maintained regardless of the vibration of the lens barrel 16.

On the other hand, the laser interferometer system 31 is supported by the lens barrel 16 via a moving mirror 32 fixed to the wafer stage 17 and a moving mechanism 33 such as an actuator fixed below the side of the lens barrel 16. It comprises a fixed mirror 35 and a laser interferometer 36. Laser interferometer 3
Numeral 6 projects the laser beam onto the movable mirror 32 and the fixed mirror 35, respectively, and receives the respective reflected light to measure the position and rotation of the wafer stage 17 as a relative positional relationship between the movable mirror 32 and the fixed mirror 35. I do.

The moving mechanism 33 is provided with a sensor (by an accelerometer, a displacement meter or the like) 34 for detecting vibration (or displacement) of the lens barrel 16 at the position where the moving mechanism 33 is mounted. The moving mechanism 33 controls the position of the fixed mirror 35 or its movement based on the measurement result of the sensor 34,
The fixed mirror 35 is maintained at a substantially constant position regardless of the vibration of the lens barrel 16. That is, when the lens barrel 16 vibrates, the moving mechanism 33 moves the fixed mirror 35 so as to cancel the phase shift due to the vibration of the lens barrel 16. Accordingly, even if the lens barrel 16 is vibrated, the influence of the vibration is canceled, and the position of the fixed mirror 35 does not change due to the vibration, and the fixed mirror 35 is maintained so as to be seen when viewed from the outside. Is done. Therefore, the wafer stage 17
Is not affected by the vibration of the lens barrel 16, and once the wafer stage 17 is positioned once, it can be maintained at a constant position regardless of the vibration of the lens barrel 16.

FIG. 1 shows one laser interferometer system (21 and 31) for controlling the movement of the reticle stage 13 and the wafer stage 17 in the X direction, respectively. In actuality, the apparatus includes a laser interferometer system (referred to as a second laser interferometer system) for movement control in the Y-direction and another X-axis for each of the reticle stage 13 and the wafer stage 17.
A laser interferometer system (referred to as a third laser interferometer system) for movement control in the direction is provided. The third laser interferometer system is used for measuring and controlling the rotation amount of each stage in the XY plane in combination with the illustrated laser interferometer system.

The laser interferometer systems (21 and 3) shown in FIG.
As in 1), each has a fixed mirror, a moving mirror, and a laser interferometer.
Sensors for detecting the vibration of No. 6 are provided in the same manner, but are not shown. However, FIG.
For one or two of the laser interferometer systems (21 and 31), the second laser interferometer system, and the third laser interferometer system, a fixed mirror is directly connected to the lens barrel 16 without using a moving mechanism or a sensor. It may be attached, and such a configuration is also included in the scope of the present invention. Also,
The mounting position of the sensor is not limited to the fixed mirror side surface of the moving mechanism as shown in FIG. 1, and may be mounted anywhere as long as vibration near the fixed mirror of the lens barrel 16 can be detected. .

FIG. 2 is a perspective view showing the external appearance of the exposure apparatus 10 of the present embodiment. The exposure apparatus 10 of the present embodiment has a rectangular plate-shaped base frame (frame caster) 50 on a floor as an installation surface. Installed. Base frame 5
The mounts 51A to 51D are provided on the reference numeral 0 (however, the mount 51D which is located on the back side of the drawing is not shown in FIG. 2).
Are mounted, and a main frame 52 having a function as a vibration isolation table is supported on these mount portions 51A to 51D. The main frame 52 includes an upper plate 53 and a wafer stage base plate 55 integrally fixed below the upper plate via four columnar members 54.

The mounts 51A to 51D are respectively arranged near the four corners of the wafer stage base plate 55, and are each constituted by an actuator and an anti-vibration pad. As the vibration isolating pad, a mechanical damper in which a compression coil spring is put in a damping liquid is used, but a pneumatic damper can also be used.

The wafer stage 1 driven by the wafer stage drive system 30 shown in FIG. 1 (not shown in FIG. 2) is placed on the wafer stage base plate 55.
7 is placed. The wafer 15 is suction-held on the wafer stage 17 via a wafer holder.
Further, an invar 56 is fixed above the wafer stage base plate 55 at a central portion of the main frame 52 integrated with the wafer stage base plate 55, and the lens barrel 16 shown in FIG. . A reticle stage 13 for holding the reticle 11 is mounted on the upper portion of the invar 56, and the reticle stage 13 is driven by the reticle stage drive system 20.

The upper part of the main frame 52 has an invar 5
A support frame 57 is provided so as to surround the reticle stage 13 and the reticle stage 13.
The illumination system 12 of FIG. 1 is supported by 7.

Reticle stage 13 and wafer stage 1
The position of 7 is measured by the corresponding laser interferometer 26 and laser interferometer 36 (not shown in FIG. 2), and the laser interferometer 26 for the reticle stage 13 is attached to the support frame 57. And a laser interferometer 36 for the wafer stage 17.
Are attached to the main frame 52.

Next, the exposure apparatus 1 configured as described above
The operation at the time of exposure of 0 will be described. First, the reticle stage 13 is aligned with the lens barrel 16 (reticle alignment) using a reticle microscope (not shown). At this time, the relative position between the lens barrel 16 and the reticle stage 13 is measured by the laser interferometer system 21, and the controller 40 positions the reticle stage 13 at the correct position by the reticle stage drive system 20 based on the measurement result.

Next, prior to the overlay exposure, the position (detection center) of the alignment microscope 18 for detecting the position detection mark on the wafer 15 and the center of the projection lens (usually,
Baseline measurement for measuring the positional relationship with the reticle center, which is the center of the reticle pattern, is performed as follows.

First, the reference plate 19 provided on the wafer stage 17 is moved to a projection image position of a reticle alignment mark (not shown) via a projection lens in the lens barrel 16. This movement is performed by the control device 40 via the wafer stage drive system 30. The surface of the reference plate 19 has substantially the same height (in the optical axis direction) as the surface of the wafer 15, and a reference mark (not shown) is formed on the surface. At this time, for example, a reticle microscope (not shown) detects the relative position between the reticle alignment mark and the reference mark via the projection lens.

At this time, the position of the wafer stage 17 is
The measurement is performed by the laser interferometer 36 via the movable mirror 32 provided on the wafer stage 17, and the measurement result is sent to the control device 40. The controller 40 is a laser interferometer 36
Is stored in the RAM as the position of the reticle 11.

Next, the control device 40 drives the wafer stage 17 via the wafer stage drive system 30, and
9 is moved to the vicinity of the detection reference position of the alignment microscope 18. Then, the relative positional relationship between the center (detection center) of the index on the index slope built in the alignment microscope 18 and the reference mark on the reference plate 19 is detected. The detected value of the relative positional relationship and the output value of the laser interferometer 36 (the position of the wafer stage 15) at this time are sent to the control device 40, and the control device 40 sets the sum thereof as the position of the alignment microscope 18, and furthermore, , The difference between the position of the reticle 11 and the alignment microscope is stored in the RAM as a “baseline measurement value”. According to the present embodiment, even if vibration occurs in the lens barrel 16 and the alignment microscope 18 attached thereto in this baseline measurement, the fixed mirror 35
Is not affected, the load on the wafer stage drive system 30 and the control device 40 in baseline measurement is reduced, and accurate baseline measurement can be performed in a short time.

In the exposure apparatus 10 of the present embodiment, after the above baseline measurement sequence, the overlay exposure on the wafer 15 is started. That is, the position of a wafer alignment mark (not shown) on the wafer 15 is detected by the alignment microscope 18. Then, the control device 40 determines the relative positional relationship between the wafer alignment mark and the center of the index mark in the alignment microscope 18 at this time,
The sum with the position of the wafer stage 17 (output value of the laser interferometer 36) is recognized as a mark position.

Subsequently, the controller 40 moves the wafer stage 17 from this mark position by the sum of the base line amount and the design coordinates of the wafer alignment mark to the laser interferometer 36.
Move based on the measured value of.

As a result, the projected image of the pattern on the reticle 11 is accurately positioned on the wafer 15, so that
Exposure is performed in this state, and the pattern on the reticle 11 is projected and transferred onto the wafer 15. In this manner, by repeatedly performing the exposure (projection transfer) while sequentially moving each shot area on the wafer 15 to the projection position of the image of the reticle pattern, the exposure of the step-and-repeat method is achieved. According to the present embodiment, even if there is a vibration in the lens barrel 16 during this exposure, the vibration does not affect the position control of the reticle stage 13 and the wafer stage 17, so that the transfer to the wafer 15 is performed. The resulting pattern image is not blurred, and a very high-resolution pattern image is obtained.

The illumination system and the projection optical system are incorporated in the main body of the exposure apparatus for optical adjustment, and a reticle stage and a wafer stage composed of a number of mechanical parts are mounted on the main body of the exposure apparatus to connect wiring and piping. The exposure apparatus of the present embodiment can be manufactured by performing adjustment (electrical adjustment, operation confirmation, and the like).

The exposure operation of the step-and-repeat method is performed by a so-called tie-pie-die method in which alignment marks in each shot area on the wafer 15 are sequentially detected and the shots are overlaid and exposed. Before exposure, each alignment mark in a plurality of shots is sent out, the detected values thereof are statistically processed to determine the arrangement of exposure shots, and so-called EGA (enhanced EGA) for exposing all shots based on the arrangement. (Global alignment) method may be used.

Further, in this embodiment, the description has been made using the stop type exposure apparatus that performs exposure while the reticle and the wafer are almost stationary. However, the scanning type apparatus that performs exposure while moving the reticle and the wafer synchronously is described. It goes without saying that the present invention can be applied to an exposure apparatus. In particular, in a scanning type exposure apparatus, the vibration increases when the reticle stage and the wafer stage are synchronously moved for scanning exposure.
Move the fixed mirror during the synchronous movement for this scanning exposure,
A great effect can be obtained by holding it at a substantially constant position.

Further, in this embodiment, the case where the present invention is applied to a reduction projection exposure apparatus has been described. However, the scope of the present invention is not limited to this, and an enlargement projection exposure apparatus, an X-ray proximity The present invention includes a case where the present invention is applied to another type of exposure apparatus such as an exposure apparatus or an electron beam exposure apparatus.

[0044]

According to the present invention, even if a fixed member such as a lens barrel on which a fixed mirror is mounted as a reference for position control of a reticle stage or a wafer stage vibrates, the position of the fixed mirror is affected by the vibration. Or the influence of the vibration on the position of the fixed mirror can be extremely small. Therefore, since the position of the fixed mirror is always kept substantially constant with respect to the vibration of the fixed member, the influence of the vibration of the fixed member on the position control of the tickle stage and the wafer stage can be extremely reduced. as a result,
The burden on the position control of both stages is reduced, and quick and accurate position control becomes possible. Further, even during wafer exposure, each stage does not move due to the vibration of the fixed member, so that the pattern image transferred from the reticle to the wafer is not blurred, and a pattern image with extremely high resolution can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic view of an embodiment of a projection exposure apparatus according to the present invention.

FIG. 2 is a perspective view showing a more external appearance of the exposure apparatus of the embodiment.

[Explanation of symbols]

 Reference Signs List 10 exposure apparatus 11 reticle 11 12 illumination system 13 reticle stage 14 pattern 15 wafer 16 lens barrel 17 wafer stage 18 alignment microscope 19 reference plate 20 reticle stage drive system 21, 31 laser interferometer system 22, 32 moving mirror 23, 33 moving mechanism 24, 34 Sensor 25, 35 Fixed mirror 26, 36 Laser interferometer 30 Wafer stage drive system 40 Controller 50 Base frame 51A to 51D Mount unit 52 Main frame 53 Upper plate 54 Columnar member 55 Wafer stage base plate 56 Invar 57 Support frame

──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. ⁶ Identification code FI H01L 21/30 515D 516B

Claims (9)

[Claims] 1. The stage while measuring the position of the stage by using an interferometer system having a movable mirror provided on a stage on which an object is mounted and moved and a reference mirror attached to a predetermined fixed member. A stage control method for controlling the movement of the reference mirror, wherein information regarding vibration of the reference mirror is detected, and the reference mirror is moved with respect to the fixed member based on the detection result. 2. An exposure apparatus for exposing a substrate by projecting an image of a pattern of a mask onto the substrate via a projection optical system, comprising: a stage capable of holding and moving the mask or the substrate. An interferometer system that has a moving mirror provided on the stage and a reference mirror attached to a predetermined fixed member and measures the position of the stage; and that the reference mirror has a substantially constant position with respect to the displacement of the fixed member. An exposure apparatus, comprising: 3. The exposure apparatus according to claim 2, wherein the holding mechanism has a moving mechanism for moving the reference mirror with respect to the fixed member. 4. The apparatus according to claim 3, wherein the moving mechanism moves the reference mirror in accordance with the vibration of the fixed member.
3. The exposure apparatus according to claim 1. 5. The apparatus according to claim 1, wherein the holding mechanism has a sensor for detecting vibration information of the fixed member, and the moving mechanism moves the reference mirror based on a detection result of the sensor. 4. The exposure apparatus according to 3. 6. The exposure apparatus according to claim 5, wherein the sensor detects at least one of displacement and acceleration of the fixed member as the vibration information. 7. The exposure apparatus according to claim 1, wherein the fixing member is a lens barrel that supports the projection optical system. 8. The exposure apparatus according to claim 1, wherein the substrate is scanned and exposed by synchronously moving the mask and the substrate. 9. An exposure apparatus for transferring a mask pattern onto a substrate, comprising: a stage capable of holding and moving the mask or the substrate; and a position of a reference member attached to a predetermined fixing member. An exposure apparatus comprising: a control system that controls a position of the stage; and a holding mechanism that holds the reference member at a substantially constant position with respect to displacement of the fixed member.