JPH06292206A - Solid-state image pickup element type color camera - Google Patents

Solid-state image pickup element type color camera

Info

Publication number
JPH06292206A
JPH06292206A JP5078093A JP7809393A JPH06292206A JP H06292206 A JPH06292206 A JP H06292206A JP 5078093 A JP5078093 A JP 5078093A JP 7809393 A JP7809393 A JP 7809393A JP H06292206 A JPH06292206 A JP H06292206A
Authority
JP
Japan
Prior art keywords
solid
state image
light
image pickup
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5078093A
Other languages
Japanese (ja)
Inventor
Takaaki Sarai
孝明 皿井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5078093A priority Critical patent/JPH06292206A/en
Publication of JPH06292206A publication Critical patent/JPH06292206A/en
Pending legal-status Critical Current

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Landscapes

  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To reduce a reflected light of a received color light and to facilitate the manufacture by providing a reflection preventing optical element reducing a reflected light of a received color light more than that of other color lights to each of plural solid-state image pickup elements. CONSTITUTION:A reflection prevention optical system is formed by coating a reflecting prevention film 10 to the surface of a seal glass 9 of a package 6 in which a CCD chip 7 of each CCD is contained. The reflection prevention film 10 is made up of a 1st coating layer 12 whose refractive index is n1 and whose thickness is d1 coated and formed on the seal glass 9 and a 2nd coating layer 13 whose refractive index is n2 and whose thickness is d2 coated and formed on the 1st coating layer 12. Then the thickness of the coating layers 12, 13 is obtained according to a predetermined relation formula, where epsilon is a wavelength of a received light, n8 is a refractive index of the seal glass and n0 is a refractive index of air.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は固体撮像素子式カラーカ
メラ、特に、その反射防止手段に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor type color camera, and more particularly to an antireflection means for the same.

【0002】[0002]

【従来の技術】以下に、図3及び図4を参照して、従来
の固体撮像素子式カラーカメラについて説明する。図3
は従来の固体撮像素子式カラーカメラの一例の3板式C
CD(チャージカプルドデバイス)カラーカメラを示
す。撮像レンズ5よりの入射光がダイクロイックプリズ
ム4に入射して、赤色光、緑色光及び青色光に分解さ
れ、その赤色光、緑色光及び青色光がそれぞれCCD
1、2及び3に入射して受光せしめられる。
2. Description of the Related Art A conventional solid-state image sensor color camera will be described below with reference to FIGS. Figure 3
Is a three-plate type C which is an example of a conventional solid-state image sensor type color camera.
1 illustrates a CD (charge coupled device) color camera. The incident light from the imaging lens 5 enters the dichroic prism 4 and is decomposed into red light, green light and blue light, and the red light, green light and blue light are respectively CCD.
It is incident on 1, 2 and 3 to receive light.

【0003】次に、これらCCD1〜3の構造を図4を
参照して説明する。金属よりなるパッケージ6の内にC
CDチップ7が収納固定され、そのパッケージ6の単色
光が入射する開口がシールガラス(窓ガラス)9で封止
される。そして、このシールガラス9の両面にそれぞれ
多層膜から成る反射防止膜10、11が被着形成されて
いる。この反射防止膜10、11は、上述のCCD1〜
3の各パッケージ6のシールガラス9に対し、可視光全
体を反射する同じ特性のものである。又、CCDチップ
7の受光側には酸化膜/絶縁膜8が被着形成されてい
る。
Next, the structure of these CCDs 1 to 3 will be described with reference to FIG. C in the metal package 6
The CD chip 7 is housed and fixed, and the opening of the package 6 into which monochromatic light enters is sealed with a seal glass (window glass) 9. Then, antireflection films 10 and 11 each made of a multilayer film are adhered and formed on both surfaces of the seal glass 9. The antireflection films 10 and 11 have the above-mentioned CCDs 1 to 1, respectively.
The seal glass 9 of each of the packages 3 of 3 has the same characteristics of reflecting the entire visible light. An oxide film / insulating film 8 is formed on the light receiving side of the CCD chip 7.

【0004】[0004]

【発明が解決しようとする課題】従来の固体撮像素子式
カラーカメラに使用される反射防止手段は、上述したよ
うに、CCD1〜3のCCDチップ7の収納されたパッ
ケージ6のシールガラス9に反射防止膜10、11が形
成されたものであるが、この反射防止膜10、11は、
上述のCCD1〜3の各パッケージ6のシールガラス9
に対し、可視光全体を反射する同じ特性のものであるの
で、層数の多い多層膜で構成しなければならない。この
ため、かかる反射防止手段はその反射率はあまり低くで
きないし、製造工程が不必要に複雑に成る。反射防止手
段の反射率を低くできにないと、フレヤやセルゴースト
が発生し易くなる。
As described above, the antireflection means used in the conventional solid-state image sensor type color camera reflects on the seal glass 9 of the package 6 in which the CCD chips 7 of the CCDs 1 to 3 are housed. The antireflection films 10 and 11 are formed, and the antireflection films 10 and 11 are
Seal glass 9 of each package 6 of the above CCDs 1-3
On the other hand, since it has the same property of reflecting the entire visible light, it must be composed of a multilayer film having a large number of layers. For this reason, the reflectance of such an antireflection means cannot be lowered so much, and the manufacturing process becomes unnecessarily complicated. If the reflectance of the antireflection means cannot be lowered, flare and cell ghost are likely to occur.

【0005】かかる点に鑑み、本発明は、反射率が少な
く、しかも製造の容易な反射防止手段を備えた固体撮像
素子式カラーカメラを提案しようとするものである。
In view of the above point, the present invention intends to propose a solid-state image sensor type color camera having a low reflectance and an antireflection means which is easy to manufacture.

【0006】[0006]

【課題を解決するための手段】本発明は、入射光を複数
の色の光に分解する色分解光学手段4と、その色分解光
学手段4によって分解された複数の色の光をそれぞれ受
光する複数の固体撮像素子1、2、3とを有する固体撮
像素子式カラーカメラにおいて、複数の固体撮像素子
1、2、3それぞれに、受光する色の光に応じて、その
受光する色の光を他の色の光に比べてその反射光を低減
する反射防止膜10を備えた光学素子を設けたものであ
る。
The present invention receives color separation optical means 4 for separating incident light into light of a plurality of colors, and light of a plurality of colors separated by the color separation optical means 4. In a solid-state image pickup device type color camera having a plurality of solid-state image pickup devices 1, 2, and 3, a plurality of solid-state image pickup devices 1, 2, and 3 are supplied with light of a color to be received in accordance with light of a color to be received. An optical element provided with an antireflection film 10 that reduces the reflected light as compared with light of other colors is provided.

【0007】この反射防止膜を備えた光学素子は、複数
の固体撮像素子1、2、3それぞれの固体撮像素子チッ
プ7の収納されたパッケージ6のガラス窓9に反射防止
膜12、13が形成されたもの、又は、複数の固体撮像
素子1、2、3それぞれの固体撮像素子チップ7に反射
防止膜21、22が形成されたもの、あるいは両者を併
用したものである。
In the optical element having the antireflection film, the antireflection films 12 and 13 are formed on the glass window 9 of the package 6 in which the solid-state image pickup device chips 7 of the plurality of solid-state image pickup devices 1, 2 and 3 are housed. The antireflection films 21 and 22 are formed on the solid-state imaging device chips 7 of the plurality of solid-state imaging devices 1, 2 and 3, respectively, or a combination of both.

【0008】[0008]

【作用】かかる本発明によれば、複数の固体撮像素子
1、2、3それぞれに、受光する色の光に応じて、その
受光する色の光を他の色の光に比べてその反射光を低減
する反射防止光学素子を設けたので、かかる反射防止光
学素子によって、複数の固体撮像素子1、2、3それぞ
れが受光する色の光の反射光を、従来のものに比べて低
減でき、又、その製造も容易と成る。
According to the present invention, the plurality of solid-state image pickup devices 1, 2 and 3 respectively respond to the light of the color to be received and reflect the light of the color to be received in comparison with the light of other colors. Since the antireflection optical element for reducing the above is provided, the antireflection optical element can reduce the reflected light of the light of the color received by each of the plurality of solid-state imaging devices 1, 2, and 3 as compared with the conventional one. In addition, its manufacture becomes easy.

【0009】[0009]

【実施例】以下、図1及び図2を参照して、本発明の2
つの実施例を説明するも、固体撮像素子式カラーカメラ
の全体構造及び各CCD1、2、3の構造は従来例と略
同様であるので、その重複説明を省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A second embodiment of the present invention will be described below with reference to FIGS.
Although one embodiment will be described, the overall structure of the solid-state image sensor color camera and the structures of the CCDs 1, 2, and 3 are substantially the same as those of the conventional example, and therefore, their duplicated description will be omitted.

【0010】先ず、図1の実施例を説明する。この実施
例の反射防止光学素子は、各CCD1、2、3のCCD
チップ7の収納されているパッケージ6のシールガラス
(窓ガラス)9の表面(上面)に反射防止膜10を被着
形成して構成したものである。この反射防止膜10は、
シールガラス9上に被着形成された第1のコーティング
層(例えば、酸化マグネシウムから成る)12と、その
第1のコーティング層12上に被着形成された第2のコ
ーティング層(例えば、フッ化カルシウムから成る)1
3から構成される。
First, the embodiment shown in FIG. 1 will be described. The antireflection optical element of this embodiment is the CCD of each CCD 1, 2, and 3.
An antireflection film 10 is adhered and formed on the surface (upper surface) of the seal glass (window glass) 9 of the package 6 in which the chip 7 is housed. This antireflection film 10 is
A first coating layer (e.g. made of magnesium oxide) 12 deposited on the sealing glass 9 and a second coating layer (e.g. fluorinated) deposited on the first coating layer 12. Consisting of calcium) 1
It consists of 3.

【0011】第1及び第2のコーティング層12、13
の屈折率をそれぞれn1 、n2 とすると、 n1 (酸化マグネシウム)=1.73 n2 (フッ化カルシウム)=1.38 と成る。尚、シールガラス9の屈折率をng 、空気の屈
折率をn0 とする。又、第1及び第2のコーティング層
12、13の厚さをそれぞれd1 、d2 とする。赤色
光、緑色光及び青色光の波長λをそれぞれ650nm、
500nm、450nmである。
First and second coating layers 12, 13
Let n 1 and n 2 be the refractive indices of n 1 (magnesium oxide) = 1.73 n 2 (calcium fluoride) = 1.38, respectively. The refractive index of the seal glass 9 is n g and the refractive index of air is n 0 . Further, the thicknesses of the first and second coating layers 12 and 13 are d 1 and d 2 , respectively. The wavelength λ of red light, green light and blue light is 650 nm,
It is 500 nm and 450 nm.

【0012】かくすると、第2のコーティング層13側
に波長λの単色光が入射したときにその反射光が最も小
さく成るには、次にの2式を満足すれば良いことが知ら
れている。
In this way, it is known that the following two expressions should be satisfied in order to minimize the reflected light when the monochromatic light having the wavelength λ is incident on the second coating layer 13 side. .

【0013】 n0 1 2=n2 2g ……………………(1) n1 1 =n2 2 =λ/4…………(2)N 0 n 1 2 = n 2 2 ng (1) n 1 d 1 = n 2 d 2 = λ / 4 (2)

【0014】これら(1)、(2)式に上述した数値を
代入して計算すると、赤色光、緑色光及び青色光をそれ
ぞれ受光するCCD1、2、3のパッケージ6のシール
ガラス9上の第1及び第2のコーティング層12、13
の厚さd1 、d2 は次のような値に成る。
By substituting the above numerical values into these equations (1) and (2), calculation is performed. First and second coating layers 12, 13
The thicknesses d 1 and d 2 of the film have the following values.

【0015】 赤 色 光 緑 色 光 青 色 光 d1 (酸化マグネシウム) 93.9nm 72.3nm 65 nm d2 (フッ化カルシウム) 118 nm 90.6nm 81.5nmRed light Green light Blue light d 1 (magnesium oxide) 93.9 nm 72.3 nm 65 nm d 2 (calcium fluoride) 118 nm 90.6 nm 81.5 nm

【0016】上述の実施例では、シールガラス9の上面
に反射防止膜10を形成した場合であるが、シールガラ
ス9の下面又は両面に被着形成しても良い。
In the above-mentioned embodiment, the antireflection film 10 is formed on the upper surface of the seal glass 9, but it may be formed on the lower surface or both surfaces of the seal glass 9.

【0017】尚、反射防止膜10は2層でなくても、1
層又3層以上でも良い。
The antireflection film 10 is not limited to two layers, but one
It may be a layer or three or more layers.

【0018】次に、図2の実施例を説明する。この実施
例の反射防止光学素子は、各CCD1、2、3のCCD
チップ7内に、反射防止膜10を形成した場合である。
このCCDチップ7の構造を説明する。15はマトリッ
クス状に形成された画素と成る受光部、16は各受光部
15の列の一側に設けられた垂直転送レジスタである。
垂直転送レジスタ16には、絶縁層を介して転送電極1
7が形成される。垂直転送レジスタ16上には層間絶縁
層18を介してアルミニウム膜等による遮光膜19が被
着形成される。遮光膜19及び受光部15の上には有機
膜20が形成される。有機膜20の上には、有機層20
上に被着形成された第1のコーティング層(SiO
2 〈PSG、BPSG)21及びその上に被着形成され
た第2のコーティング層(プラズマSiNより成るパッ
シベーション)22から成る反射防止膜10が被着形成
されている。この反射防止膜10の上に平坦化層23が
被着形成され、その上にオンチップマイクロレンズ24
が被着形成されている。
Next, the embodiment shown in FIG. 2 will be described. The antireflection optical element of this embodiment is the CCD of each CCD 1, 2, and 3.
This is the case where the antireflection film 10 is formed in the chip 7.
The structure of the CCD chip 7 will be described. Reference numeral 15 is a light receiving portion formed of pixels formed in a matrix, and 16 is a vertical transfer register provided on one side of the row of each light receiving portion 15.
The vertical transfer register 16 includes a transfer electrode 1 via an insulating layer.
7 is formed. A light shielding film 19 made of an aluminum film or the like is deposited on the vertical transfer register 16 with an interlayer insulating layer 18 interposed therebetween. An organic film 20 is formed on the light shielding film 19 and the light receiving unit 15. The organic layer 20 is formed on the organic film 20.
A first coating layer (SiO 2 deposited on the top)
2 <PSG, BPSG) 21 and an antireflection film 10 made of a second coating layer (passivation made of plasma SiN) 22 deposited thereon are deposited. A flattening layer 23 is deposited on the antireflection film 10, and an on-chip microlens 24 is formed thereon.
Has been formed.

【0019】そして、上述の(1)式及び(2)式を満
足するように、第1及び第2のコーティング層21、2
2の各屈折率に応じて、CCD1、2、3で受光する赤
色光、緑色光及び青色光の波長に違いに応じて、第1及
び第2っのティング層21、22の厚さを選定する。
Then, the first and second coating layers 21 and 2 are provided so as to satisfy the above equations (1) and (2).
The thicknesses of the first and second coating layers 21 and 22 are selected according to the wavelengths of red light, green light, and blue light received by the CCDs 1, 2, and 3 according to the respective refractive indices of 2. To do.

【0020】上述の実施例では、固体撮像素子式カラー
カメラとして、3板式CCDカラーカメラの場合につい
て述べたが、入射光をダイクロイックプリズムによっ
て、緑色光と、赤色光+青色光とに分離して、2枚のC
CDに入射せしめるようにした2板式CCDカラーカメ
ラにも本発明を適用できる。又、固体撮像素子として
は、CCDに限らず、BBD(バケットブリゲードデバ
イス)、CID(チャージインジェクションデバイ
ス)、CPD(チャージプライミングデバイス)、加速
転送MOS型デバイス、CSD(チャージスイープデバ
イス)、SIT(スタッティックインダクショントラン
ジスタ)等でも良い。
In the above-mentioned embodiment, the case where the solid-state image pickup device type color camera is a three-plate type CCD color camera has been described. 2 sheets of C
The present invention can also be applied to a two-plate CCD color camera that is made to enter a CD. Further, the solid-state image pickup device is not limited to the CCD, but is also a BBD (bucket brigade device), CID (charge injection device), CPD (charge priming device), acceleration transfer MOS type device, CSD (charge sweep device), SIT (stack device). Tick induction transistor) or the like may be used.

【0021】[0021]

【発明の効果】上述せる本発明によれば、入射光を複数
の色の光に分解する色分解光学手段と、その色分解光学
手段によって分解された複数の色の光をそれぞれ受光す
る複数の固体撮像素子とを有する固体撮像素子式カラー
カメラにおいて、複数の固体撮像素子それぞれに、受光
する色の光に応じて、その受光する色の光を他の色の光
に比べてその反射光を低減する反射防止膜を備えた反射
防止光学素子を設けたので、反射光が低減し、しかも製
造の容易な反射防止手段を備えた固体撮像素子式カラー
カメラを得ることができる。このように、反射防止手段
の反射光が低減するので、フレヤやセルゴーストの発生
を低減することができる。
According to the present invention described above, color separation optical means for separating incident light into light of a plurality of colors, and a plurality of light receiving elements for receiving a plurality of colors of light separated by the color separation optical means are provided. In a solid-state image sensor type color camera having a solid-state image sensor, each of the plurality of solid-state image sensors responds to the light of the received color by comparing the reflected light with the light of the received color compared to the light of other colors. Since the antireflection optical element provided with the antireflection film to be reduced is provided, it is possible to obtain the solid-state imaging device type color camera having the antireflection means which reduces the reflected light and is easy to manufacture. In this way, since the reflected light of the antireflection means is reduced, it is possible to reduce the occurrence of flare and cell ghost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の反射防止光学素子(1)を示
す断面図
FIG. 1 is a sectional view showing an antireflection optical element (1) of an example of the invention.

【図2】実施例の反射防止光学素子(2)を示す断面図FIG. 2 is a sectional view showing an antireflection optical element (2) of Example.

【図3】3板式固体撮像素子(CCD)カラーカメラを
示す配置図
FIG. 3 is a layout view showing a three-plate solid-state image sensor (CCD) color camera.

【図4】そのカラーカメラのCCDを示す断面図FIG. 4 is a sectional view showing a CCD of the color camera.

【符号の説明】[Explanation of symbols]

1 CCD 2 CCD 3 CCD 4 ダイクロイックプリズム 5 撮像レンズ 6 パッケージ 7 CCDチップ 9 シールガラス 10 反射防止膜 12 コーティング層 13 コーティング層 21 コーティング層 22 コーティング層 1 CCD 2 CCD 3 CCD 4 dichroic prism 5 imaging lens 6 package 7 CCD chip 9 seal glass 10 antireflection film 12 coating layer 13 coating layer 21 coating layer 22 coating layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 入射光を複数の色の光に分解する色分解
光学手段と、該色分解光学手段によって分解された複数
の色の光をそれぞれ受光する複数の固体撮像素子とを有
する固体撮像素子式カラーカメラにおいて、 上記複数の固体撮像素子それぞれに、受光する色の光に
応じて、該受光する色の光を他の色の光に比べてその反
射光を低減する反射防止膜を備えた反射防止光学素子を
設けたことを特徴とする固体撮像素子式カラーカメラ。
1. A solid-state imaging device having color-separation optical means for separating incident light into light of a plurality of colors and a plurality of solid-state image pickup elements for respectively receiving light of a plurality of colors separated by the color-separation optical means. In the element type color camera, each of the plurality of solid-state image pickup devices is provided with an antireflection film that reduces the reflected light of the received color light compared to the other color light in accordance with the received color light. A solid-state image sensor type color camera characterized by being provided with an antireflection optical element.
【請求項2】 上記反射防止光学素子は、上記複数の固
体撮像素子それぞれの固体撮像素子チップの収納された
パッケージのガラス窓に反射防止膜が形成されたもので
あることを特徴とする請求項1記載の固体撮像素子式カ
ラーカメラ。
2. The antireflection optical element is characterized in that an antireflection film is formed on a glass window of a package accommodating a solid-state image pickup device chip of each of the plurality of solid-state image pickup devices. 1. The solid-state image sensor color camera according to 1.
【請求項3】 上記反射防止光学素子は、上記複数の固
体撮像素子それぞれの固体撮像素子チップに反射防止膜
が形成されたものであることを特徴とする請求項1記載
の固体撮像素子式カラーカメラ。
3. The solid-state image sensor type color according to claim 1, wherein the anti-reflection optical element has an anti-reflection film formed on a solid-state image sensor chip of each of the plurality of solid-state image sensors. camera.
JP5078093A 1993-04-05 1993-04-05 Solid-state image pickup element type color camera Pending JPH06292206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5078093A JPH06292206A (en) 1993-04-05 1993-04-05 Solid-state image pickup element type color camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5078093A JPH06292206A (en) 1993-04-05 1993-04-05 Solid-state image pickup element type color camera

Publications (1)

Publication Number Publication Date
JPH06292206A true JPH06292206A (en) 1994-10-18

Family

ID=13652255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5078093A Pending JPH06292206A (en) 1993-04-05 1993-04-05 Solid-state image pickup element type color camera

Country Status (1)

Country Link
JP (1) JPH06292206A (en)

Cited By (6)

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Publication number Priority date Publication date Assignee Title
JP2007242697A (en) * 2006-03-06 2007-09-20 Canon Inc Image pickup device and image pickup system
EP2237318A2 (en) 2009-03-31 2010-10-06 Sony Corporation Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
JP2011040774A (en) * 2010-10-06 2011-02-24 Sony Corp Solid-state imaging element, camera module, and electronic apparatus module
US8558158B2 (en) 2009-11-06 2013-10-15 Sony Corporation Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
US9279917B2 (en) 2013-12-31 2016-03-08 Samsung Display Co., Ltd. Optical film, method of manufacturing the same, and electronic device including the same
WO2022009693A1 (en) * 2020-07-09 2022-01-13 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and method for manufacturing same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242697A (en) * 2006-03-06 2007-09-20 Canon Inc Image pickup device and image pickup system
EP2237318A2 (en) 2009-03-31 2010-10-06 Sony Corporation Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
US8558158B2 (en) 2009-11-06 2013-10-15 Sony Corporation Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
US9419157B2 (en) 2009-11-06 2016-08-16 Sony Corporation Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
JP2011040774A (en) * 2010-10-06 2011-02-24 Sony Corp Solid-state imaging element, camera module, and electronic apparatus module
US9279917B2 (en) 2013-12-31 2016-03-08 Samsung Display Co., Ltd. Optical film, method of manufacturing the same, and electronic device including the same
WO2022009693A1 (en) * 2020-07-09 2022-01-13 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and method for manufacturing same

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