JP6971908B2 - A method for manufacturing a magnetic detector, a current detector, a magnetic detector, and a method for manufacturing a current detector. - Google Patents

Description

The present invention relates to a magnetic detection device, a current detection device, a method for manufacturing the magnetic detection device, and a method for manufacturing the current detection device.

A magnetic detection device that detects the strength of a magnetic field using a magnetic sensor and a current detection device (also called a current sensor) that detects the amount of current are known. For example, in Patent Document 1, a primary conductor into which a measured current is input, a secondary conductor supporting a signal processing IC, and an insulating tape laid between two overhanging portions of the secondary conductor are supported. A magnetic sensor arranged in a gap of a primary conductor in plan view and a current sensor having a package for sealing each of these components are disclosed. When a current is input to the primary conductor, the current sensor detects the magnetic field generated around the primary conductor by the current using a magnetic sensor, and outputs an output signal according to the amount of the current.
Patent Document 1 International Publication No. 2015/015539

High dielectric strength is required in the current detection device and the magnetic detection device having such a configuration.

In the first aspect of the present invention, there is provided a magnetic detection device including a magnetic sensor that detects a magnetic field and a sealing member that covers and seals the entire outer surface of the magnetic sensor.

In the second aspect of the present invention, the magnetic detection device of the first aspect and the conductor through which the measured current flows are provided, and the magnetic sensor detects the magnetic field generated by the current flowing through the conductor and is a sealing member. Provides a current detector that seals at least a portion of the conductor and separates the magnetic sensor from the conductor.

In the third aspect of the present invention, a conductor having a roughened bottom surface through which a measured current flows, a magnetic sensor for detecting a magnetic field generated by the current flowing through the conductor, and at least a part of the conductor and a magnetic sensor. A current detecting device comprising a sealing member for sealing the magnet is provided.

In the fourth aspect of the present invention, a step of arranging a magnetic sensor for detecting a magnetic field on a support member, a step of sealing the upper surface of the magnetic sensor with a first sealing member, and a step of removing the support member. And a step of sealing the bottom surface of the magnetic sensor with a second sealing member are provided.

In the fifth aspect of the present invention, a stage in which a conductor through which a measured current flows and a magnetic sensor for detecting a magnetic field generated by the current flowing through the conductor are arranged apart from each other on a support member, and at least a part of the conductor. The step of sealing the upper surface of the magnetic sensor with the first sealing member, the step of removing the support member, and the step of sealing at least a part of the conductor and the bottom surface of the magnetic sensor with the second sealing member. A method for manufacturing a current detector is provided.

The outline of the above invention does not list all the features of the present invention. A subcombination of these feature groups can also be an invention.

The internal configuration of the current sensor according to this embodiment is shown. FIG. 1A shows a cross-sectional configuration of a current sensor with respect to the reference line BB. The flow of the manufacturing process of the current sensor which concerns on this embodiment is shown. The state of the current sensor formed by one step of the current sensor manufacturing process, that is, the configuration of the lead frame in which the support member is attached to the lower surface is shown. FIG. 3A shows a cross section of the current sensor with respect to the reference line BB. The state of the current sensor formed by one step of the current sensor manufacturing process, that is, the state in which the magnetic sensor and the signal processing IC are arranged apart from each other on the support member, and the signal processing IC is wire-bonded to the magnetic sensor and the terminal. Is shown. FIG. 4A shows a cross section of the current sensor with respect to the reference line BB. The state of the current sensor formed by one step of the current sensor manufacturing process, that is, the state in which the lead frame, the magnetic sensor, and the upper surface side of the signal processing IC are sealed by the first sealing member is the reference line AA in FIG. 5B. show. FIG. 5A shows a cross section of the current sensor with respect to the reference line BB. The state of the current sensor formed by one step of the manufacturing process of the current sensor, that is, the state where the lead frame from which the support member is removed, the magnetic sensor, and the bottom surface side of the signal processing IC are sealed by the second sealing member is shown. The reference line AA in 6B is shown. FIG. 6A shows a cross section of the current sensor with respect to the reference line BB. The state of the current sensor formed by one step of the current sensor manufacturing process, that is, the state in which the lead frame, the magnetic sensor, and the signal processing IC are packaged by the sealing member is shown. FIG. 7A shows a cross section of the current sensor with respect to the reference line BB. The internal configuration of the Hall sensor according to the modified example is shown. FIG. 8A shows a cross-sectional configuration of the Hall sensor with respect to the reference line BB. The internal configuration of the Hall IC according to the modified example is shown. The cross-sectional structure of the Hall IC with respect to the reference line BB in FIG. 9A is shown. The flow of the manufacturing process of the Hall IC which concerns on a modification is shown. The state of the Hall IC formed by one step of the Hall IC manufacturing process, that is, the configuration of the lead frame in which the support member is attached to the lower surface is shown. FIG. 11A shows a cross section of the Hall IC with respect to the reference line BB. The state of the Hall IC formed by one step of the Hall IC manufacturing process, that is, the state in which the magnetic sensor and the signal processing IC are arranged apart from each other on the support member, and the signal processing IC is wire-bonded to the magnetic sensor and the terminal. Is shown. FIG. 12A shows a cross section of the Hall IC with respect to the reference line BB. Regarding the reference line AA in FIG. 13B, the state of the Hall IC formed by one step of the Hall IC manufacturing process, that is, the state in which the lead frame, the magnetic sensor, and the upper surface side of the signal processing IC are sealed by the first sealing member. show. FIG. 13A shows a cross section of the Hall IC with respect to the reference line BB. The state of the Hall IC formed by one step of the manufacturing process of the Hall IC, that is, the state where the lead frame from which the support member is removed, the magnetic sensor, and the bottom surface side of the signal processing IC are sealed by the second sealing member is shown. The reference line AA at 14B is shown. FIG. 14A shows a cross section of the Hall IC with respect to the reference line BB. The state of the Hall IC formed by one step of the Hall IC manufacturing process, that is, the state in which the lead frame, the magnetic sensor, and the signal processing IC are packaged by the sealing member is shown. FIG. 15A shows a cross section of the Hall IC with respect to the reference line BB.

Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention to which the claims are made. Also, not all combinations of features described in the embodiments are essential to the means of solving the invention.

1A and 1B show the configuration of the current sensor 100 according to the present embodiment. Here, FIG. 1A shows the internal configuration of the current sensor 100 in a plan view, and FIG. 1B shows a cross-sectional configuration of the current sensor 100 with respect to the reference line BB in FIG. 1A. The vertical direction in FIG. 1A is the vertical direction, the horizontal direction in FIGS. 1A and 1B is the horizontal direction, and the vertical direction in FIG. 1B is the height direction. Further, in FIGS. 1A and 1B and other drawings corresponding thereto, the internal configuration of the current sensor 100 is shown through the package 60 (first and second sealing members 61, 62). The current sensor 100 is an example of a current detection device for the purpose of providing a current sensor having high insulation resistance, and includes a conductor 10, a plurality of device terminals 21, a magnetic sensor 30, a signal processing IC 40, wires 51, 52, and a current sensor 100. The package 60 is provided.

The conductor 10 is a conductive member in which a current (referred to as a measured current) detected by the current sensor 100 flows along a current path. The conductor 10 has a thickness of 0.2 mm using a conductor such as a metal such as copper in order to pass a large current to be measured, but the terminal portion 11 has a thickness of 0.4 mm and is provided in two sets on the right side in the lateral direction. It is formed into a shape that returns from one set of the terminal portions 11 to the other set through the inside of the package 60 described later. The conductor 10 includes two sets of terminal portions 11, two leg portions 12, and a curved portion 13.

The two sets of terminal portions 11 are current terminals for inputting and outputting the current to be measured, and are arranged vertically separated on the right side in the horizontal direction. The two sets of terminal portions 11 have a substantially rectangular shape in a plan view, and each of the two sets of terminal portions 11 included in the two sets of terminal portions 11 has their respective base ends (that is, the left end) reduced in thickness. It is integrally connected to the right end of the two legs 12. The terminal portion 11 of each set is not limited to the two terminal portions 11, and may include three or more terminal portions 11.

The two legs 12 send a current input to the terminal portion 11 of one set of the two sets of terminal portions 11 to the curved portion 13, or send a current from the curved portion 13 to the terminal portion 11 of the other set. It is a member and is arranged vertically spaced apart on the left side of the two sets of terminal portions 11. The two legs 12 have a rectangular shape having a longitudinal direction in the plan view, and two sets of terminal portions 11 connected to the right ends are integrally connected to the two ends of the curved portion 13, respectively. ..

The curved portion 13 is a member that changes the direction of the current flowing from one of the two leg portions 12 in the opposite direction and sends the current to the other leg portion 12, and is arranged on the left side of the two leg portions 12. The curved portion 13 is formed in a U shape having a trunk portion and two ends connecting the trunk portion in a plan view, and the trunk portion is directed to the left side, and the two ends are each with two leg portions 12. Connect integrally to. Here, the width of the space formed inside the curved portion 13 is larger than the width of the magnetic sensor 30.

The bottom surface 10a of the conductor 10 may be roughened. Here, the arithmetic average roughness (Ra) of the roughened bottom surface 10a is 0.01 μm or more. As a result, the package 60 that seals the conductor 10 comes into close contact with the bottom surface 10a of the conductor 10, and the formation of an interface is suppressed.

A plating film may be provided on the upper surface of the thin portion (that is, the leg portion 12 and the curved portion 13) except for the upper surface 11a of the thick portion (that is, the terminal portion 11) of the conductor 10.

The conductor 10 exposes the upper surface and the tip surface (that is, the right end surface) of the terminal portions 11 included in the two sets of terminal portions 11 flushly with the upper surface and the right end surface of the package 60, and seals the conductor 10 in the package 60. Has been done. The upper surface 11a of the terminal portion 11 is joined to wiring or the like arranged on the external board when the current sensor 100 is mounted on the external board, for example. The measured current is input from one set of terminal portions 11 on the upper side (or lower side) in the vertical direction, and flows through the curved portion 13 via the upper (or lower side) leg portion 12 to turn the direction to the left. It changes 180 degrees to the right from, and is output from the other set of terminal portions 11 on the lower side (or upper side) via the lower (or upper side) leg portion 12. The path through which the measured current flows in the conductor 10 is called a current path.

The plurality of device terminals 21 are signal terminals that output the calculation result of the amount of current output from the signal processing IC 40 to the external device and input the signal for setting the correction parameter from the external device to the signal processing IC 40. The plurality of device terminals 21 include five terminals as an example, and are arranged vertically separated on the left side in the horizontal direction. Each of the plurality of device terminals 21 is 0.2 mm thick using a conductor such as a metal such as copper, but the left end portion is 0.4 mm thick and is formed into a rectangular shape having a longitudinal length in the lateral direction.

A plating film may be provided on the upper surface of the thin portion except for the upper surface 21a of the thick portion (that is, the left end portion) of the plurality of device terminals 21 using, for example, silver.

The plurality of device terminals 21 are sealed in the package 60 by exposing the upper surface 21a and the tip surface (that is, the left end surface) of the left end portion flushly to the upper surface and the left side surface of the package 60. The upper surface 21a of the device terminal 21 is joined to wiring or the like arranged on the external board when the current sensor 100 is mounted on the external board, for example.

The magnetic sensor 30 is an example of a magnetic detection element that detects a magnetic field generated by a current flowing through a conductor 10. As the magnetic sensor 30, for example, a compound semiconductor Hall element composed of InAs, GaAs, etc., a Hall element composed of silicon (or a Hall IC integrated with an amplification circuit), and a magnetic resistance element can be adopted. .. The magnetic sensor 30 is arranged inside the curved portion 13 of the conductor 10, preferably at the center of curvature of the current path in the curved portion 13. As a result, the magnetic field generated by the current flowing through the curved portion 13 is focused on the magnetic sensor 30, and the magnetic field can be detected by the magnetic sensor 30 at a high SN ratio. In order to detect the local area with an even higher SN ratio, the thickness of the magnetic sensor 30 is preferably thinner than the thickness of the conductor 10.

An insulating member 31 may be provided on the bottom surface of the magnetic sensor 30. The insulating member 31 may have a roughened surface, and its arithmetic average roughness (Ra) is 0.01 μm or more. As the insulating member 31, for example, a die attach film attached to the back surface of the wafer can be adopted when the wafer is diced to separate the circuit elements of the magnetic sensor 30 formed on the wafer. The bottom surface of the magnetic sensor 30 is protected by the insulating member 31 (for example, during wet blasting described later), and the insulating member 31 is roughened with an arithmetic mean roughness (Ra) of 0.01 μm or more. The formation of the interface is suppressed by the package 60 coming into close contact with the bottom surface of the magnetic sensor 30 and sealing the package 60. If the method is such that the bottom surface of the magnetic sensor 30 is not significantly damaged by plasma processing or the like and does not need to be protected, the insulating member 31 may be omitted.

In addition, a magnetic material formed by magnetic material plating may be provided on the upper side, the lower side, or both sides of the magnetic sensor 30, and the magnetic field may be focused by them and input to the magnetic sensor 30. Further, the upper surface, the lower surface, or both surfaces of the magnetic sensor 30 may be electrostatically shielded by using a non-magnetic conductor such as aluminum to shield the electrostatic noise coming from the outside of the package 60.

An additional magnetic sensor for detecting an external magnetic field may be provided outside the curved portion 13 of the conductor 10 in order to remove noise due to an external magnetic field or the like input to the magnetic sensor 30. In such a case, the signal processing IC 40 calculates the difference between the detection signal of the magnetic sensor 30 and the detection signal of the additional magnetic sensor to cancel the noise derived from the external magnetic field or the like included in the detection signal of the magnetic sensor 30. be able to.

The magnetic sensor 30 is connected to the signal processing IC 40 by wire bonding, and outputs a voltage corresponding to the detected magnetic field strength to the signal processing IC 40 as an output signal.

The signal processing IC 40 is a device that processes a signal output by the magnetic sensor 30 to calculate the amount of current flowing through the conductor 10. The signal processing IC 40 includes at least one such as a memory, a sensitivity correction circuit, an offset correction circuit that corrects an output offset, an amplifier circuit that amplifies an output signal from the magnetic sensor 30, and a temperature correction circuit that corrects an output according to temperature. It may be built-in. In the present embodiment, the signal processing IC 40 adopts a hybrid configuration as a device separate from the magnetic sensor 30. The signal processing IC 40 is arranged between the curved portion 13 of the conductor 10 and the plurality of device terminals 21.

An insulating member 41 may be provided on the bottom surface of the signal processing IC 40. The insulating member 41 may have a roughened surface, and its arithmetic average roughness (Ra) is 0.01 μm or more. As the insulating member 41, for example, a die attach film attached to the back surface of the wafer can be adopted when the wafer is diced to separate the circuit elements of the signal processing IC 40 formed on the wafer. The bottom surface of the signal processing IC 40 is protected by the insulating member 41 (for example, during wet blasting described later), and the insulating member 41 is roughened with an arithmetic average roughness (Ra) of 0.01 μm or more. The formation of the interface is suppressed by the package 60 coming into close contact with the bottom surface of the signal processing IC 40 and sealing the package 60.

Although the signal processing IC 40 is not supported by a lead frame or the like in the present embodiment, the signal processing IC 40 may be mounted on the lead frame, for example. Further, the insulating member 41 may be omitted as described above.

The signal processing IC 40 is connected to a plurality of device terminals 21 by wire bonding, outputs a calculation result of the amount of current flowing through the conductor 10 through them, and further inputs parameter settings and the like. Any one of the plurality of device terminals 21 may be used as the ground terminal. Further, the upper surface, the lower surface, or both surfaces of the signal processing IC 40 may be electrostatically shielded by using a non-magnetic conductor such as aluminum to shield the electrostatic noise coming from the outside of the package 60.

In the current sensor 100 according to the present embodiment, the signal processing IC 40 hybridly configured as a device separate from the magnetic sensor 30 is adopted, but instead, it is formed on the same semiconductor substrate as the magnetic sensor 30. A signal processing IC provided with a signal processing circuit, that is, a signal processing IC having a monolithic configuration may be adopted together with the magnetic sensor 30. In such a case, the curved portion 13 of the conductor 10 is arranged with a clearance above or below the same semiconductor substrate, and the magnetic sensor 30 on the same semiconductor substrate is positioned inside the curved portion 13 of the conductor 10 in a plan view. Then, the same semiconductor substrate is separated from the conductor 10 by the package 60, and the entire outer surface is covered and sealed. Further, a hybrid type signal processing IC in which the magnetic sensor 30 and the signal processing IC 40 are mounted on the same circuit board may be adopted.

The wires 51 and 52 are linear members formed by using a conductor such as a metal such as copper or gold. The wire 51 includes four wires erected between the magnetic sensor 30 and the signal processing IC 40, drives the magnetic sensor 30 through these wires, and sends the detection signal to the signal processing IC 40. The wire 52 includes five wires erected between the signal processing IC 40 and the upper surface 21b of the plurality of device terminals 21, and outputs the calculation result of the signal processing IC 40 via these five wires.

The package 60 is an example of a sealing member that seals and protects each component of the current sensor 100 except for a part of the plurality of device terminals 21 and the conductor 10. Here, the package 60 separates each of the magnetic sensor 30 and the signal processing IC 40 from the conductor 10 and the plurality of device terminals 21 and together with them covers the entire outer surface of each and seals the inside thereof. Insulate from the device terminal 21 of. The magnetic sensor 30 (including a member in contact with the magnetic sensor 30 such as a signal processing IC and a circuit board when mounted on the same circuit board as the signal processing IC 40) is in contact with, for example, the conductor 10 and the device terminal 21. All outer surfaces are covered and sealed by the package 60 without being in contact with and supported by the substrate, film, etc. arranged in. Here, "all outer surfaces" means that all the outer surfaces except the connection portion of the conductor such as the bonding wire for connecting the magnetic sensor 30 to the signal processing IC 40 are covered with the package 60. When the insulating member 31 is provided on the bottom surface of the magnetic sensor 31, the surface of the insulating member 31 is used as the outer surface of the magnetic sensor 31.

The package 60 is molded into a rectangular parallelepiped shape having a thickness smaller than the length of one side of the rectangular upper surface and the upper surface by molding using, for example, a resin having excellent insulating properties such as epoxy. By embedding the magnetic sensor 30 and the signal processing IC 40 inside the package 60 apart from the conductor 10 and the plurality of device terminals 21, that is, by embedding them alone, the magnetic sensor 30 and the signal processing IC 40 are embedded in the package 60. Since an interface that can be expanded from the boundary with each is not formed, a high withstand voltage can be obtained. Further, by eliminating the need for a lead frame that supports the magnetic sensor 30 and the signal processing IC 40, the current sensor 100 can be miniaturized. Further, since it is not necessary to raise or lower the curved portion 13 surrounding the magnetic sensor 30 with respect to the frame supporting the magnetic sensor 30 by performing step processing such as half-cutting the conductor 10, the resistance of the conductor 10 due to the step processing is increased. The increase can be avoided.

The package 60 includes the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, and the first and second sealing members 61 that seal the upper surface side including at least the upper surface and the bottom surface side including at least the bottom surface of the signal processing IC 40, respectively. 62 is included. In addition to the upper surface of the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40, the upper surface side may be included, and in such a case, the bottom surface side is not included. .. Further, only the upper surface of the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40 may be included on the upper surface side, and in such a case, the side surface is included on the bottom surface side. Further, in addition to the upper surface of the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40, a part of the side surface thereof may be included as the upper surface side, and in such a case, the remaining side surface is on the bottom surface side. It shall include the part.

As will be described later, the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, and the bottom surface of the signal processing IC 40 are supported and the upper surface side thereof is covered with the first sealing member 61, and the conductor 10, the magnetic sensor 30, and the signal processing IC 40 are covered. By turning the signal processing IC 40 upside down and covering the bottom surface side thereof except the upper surface side covered with the first sealing member 61 with the second sealing member 62, the magnetic sensor 30 and the signal processing IC 40 are covered with the conductor 10 and the signal processing IC 40. It can be separated from the plurality of device terminals 21 and can be individually embedded and sealed in the package 60 by covering the entire outer surface thereof. The first and second sealing members 61 and 62 are preferably made of the same material, but may be formed by using different materials. Further, at least one of the first and second sealing members 61 and 62 may be formed of a material containing a filler which is an inorganic material.

According to the current sensor 100 according to the present embodiment, the package 60 is from the magnetic sensor 30 and the magnetic sensor 30 that detect the magnetic field generated by the current flowing through the conductor 10 together with the curved portion 13 of the conductor 10 through which the measured current flows. By separating the signal processing IC 40 for processing the output signal from the conductor 10 and the plurality of device terminals 21 and covering and sealing the entire outer surface thereof, the magnetic sensor 30 and the signal processing IC 40 are embedded in the package 60. A high withstand voltage can be obtained because an interface that can expand from the boundary with the above is not formed.

A method of manufacturing the current sensor 100 according to the present embodiment will be described. FIG. 2 shows the flow of the manufacturing process of the current sensor according to the present embodiment.

In step S102, the lead frame 20 including the pattern of the conductor 10 and the plurality of device terminals 21 is formed. As shown in FIGS. 3A and 3B, the lead frame 20 is a rectangular metal frame, and inside the lead frame 20, a plurality of conductor 10 patterns are connected to the two sets of terminal portions 11 to the right frame of the frame. The patterns of the device terminals 21 are included by connecting their left ends to the left frame of the frame.

In this embodiment, one lead frame 20 includes only a set of conductors 10 constituting one current sensor 100 and a pattern of a plurality of device terminals 21, but this is an example for explanation. One lead frame 20 may include a pattern in which a plurality of sets of conductors 10 constituting a plurality of current sensors 100 and a plurality of device terminals 21 are arranged.

First, for example, a prototype of the lead frame 20 is formed by pressing a single metal plate. Here, the metal plate has a thickness of, for example, 0.4 mm. Next, the prototype of the lead frame 20 is etched, for example, by etching the upper surface 11a of the pattern portion corresponding to the terminal portion 11 of the conductor 10 and the upper surface 21a of the pattern portion corresponding to the left end portion of the plurality of device terminals 21. . Mold to a thin wall with a thickness of 2 mm. As a result, the terminal portion 11 of the thick conductor 10 and the left end portion of the plurality of device terminals 21 function as connection terminals. Next, a plating film is provided on the upper surface of the portion thinned by etching using, for example, silver. Instead of this, a plating film is provided on the entire upper surface of the lead frame 20, and after the first and second sealing members 61 and 62, which will be described later, are cured, the upper surface 11a of the terminal portion 11 of the conductor 10 and the plurality of device terminals 21 are provided. The plating film on the upper surface 21a of the left end portion of the above may be removed, and a new plating film may be provided using, for example, tin. Finally, the outer edge of the sheet-shaped support member 70 is attached to the lower surface of the lead frame 20, and the bottom surface is provided inside the frame. As the support member 70, for example, a polyimide tape having a high heat resistance on which an adhesive layer is formed, a ceramic sheet, or the like can be adopted.

In the method for manufacturing the current sensor 100 according to the present embodiment, the terminal portion 11 of the conductor 10 and the left end portions of the plurality of device terminals 21 that function as connection terminals are formed by etching the prototype of the lead frame 20. Instead of this, for example, by bending or half-cutting the lead frame 20, the internal pattern of the lead frame 20 including the leg portion 12, the curved portion 13, and the right end portion of the plurality of device terminals 21 of the conductor 10 can be obtained. The connection terminal may be formed by bending or raising the external pattern of the lead frame 20 including the terminal portion 11 of the conductor 10 and the left end portion of the plurality of device terminals 21. Here, in the case of bending, the lead frame 20 has a thickness of, for example, 0.2 mm, and in the case of half-cutting, the lead frame 20 has a thickness of, for example, 0.3 mm, and 0.12 to 0.15 mm is half. I will pull it out. Further, although the leadless package structure is taken as an example, the package structure may have a lead in which the lead frame is bent outside the first sealing member 61 or the second sealing member 62.

In step S104, the magnetic sensor 30 and the signal processing IC 40 are installed inside the lead frame 20 apart from the lead frame 20. As shown in FIGS. 4A and 4B, on the support member 70 provided as the bottom surface of the lead frame 20, the magnetic sensor 30 is placed inside the curved portion 13 of the conductor 10 in a plan view, preferably in the curved portion 13. The signal processing IC 40 is arranged at the center of curvature of the path away from the curved portion 13, and the signal processing IC 40 is arranged separated from each other between the curved portion 13 of the conductor 10 and the plurality of device terminals 21 in a plan view. The magnetic sensor 30 and the signal processing IC 40 are fixed by an adhesive layer formed on the surface of the support member 70.

In step S106, as shown in FIGS. 4A and 4B, the magnetic sensor 30 and the signal processing IC 40 are wire-bonded by the wire 51, and the signal processing IC 40 and the plurality of device terminals 21 are wire-bonded by the wire 52.

In step S108, the upper surface side including at least the upper surface of the lead frame 20, the magnetic sensor 30, and the signal processing IC 40 (in this example, the side surface is included in addition to the upper surface, but only the upper surface is included or a part of the side surface is added to the upper surface. May be included) is sealed by the first sealing member 61. As shown in FIGS. 5A and 5B, the lead frame 20 in which the magnetic sensor 30 and the signal processing IC 40 are arranged on the support member 70 is housed in a box-shaped formwork 71 having an open upper surface, and a plate-shaped lid is provided. The body 72 is pressed onto the mold 71 to close the internal space of the mold 71 including the lead frame 20, and the sealing member is poured into the mold 71 through the through hole (not shown) of the mold 71. Here, as the first sealing member 61, a resin such as epoxy, which is an insulating material, can be adopted. Further, a resin containing a filler may be used as the first sealing member 61. Further, in order to prevent resin bleeding onto the upper surface 11a of the terminal portion 11 of the conductor 10 and the upper surface 21a of the device terminal 21, the surface of the lid 72 on the formwork 71 side is made of a resin film (for example, Teflon (registered trademark) film). ) May be covered.

In step S110, the support member 70 is removed from the lead frame 20. The lead frame 20 whose upper surface side is sealed by the first sealing member 61 is taken out from the mold 71, turned upside down, and the support member 70 is peeled off from the lower surface of the lead frame 20.

In step S112, the bottom surfaces of the lead frame 20 (the conductor 10 and the portions of the plurality of device terminals 21) from which the support member 70 has been removed, the magnetic sensor 30, the signal processing IC 40, and the first sealing member 61 are roughened. do. Here, as a method for rough surface processing, for example, wet blast treatment or plasma treatment can be adopted. In the wet blast treatment, fine particles are included in water and sprayed onto the surface, so that the fine particles collide with each other and the surface layer of the surface is scraped, and at the same time, foreign substances are washed away by water, and the surface is processed, for example, on the order of submicrons. Plasma treatment processes the surface by irradiating the surface with plasma. The arithmetic average roughness (Ra) of the bottom surfaces of the lead frame 20 (conductor 10 and the plurality of device terminals 21), the magnetic sensor 30, and the signal processing IC 40 shall be 0.01 μm or more. As a result, the second sealing member 62 that seals the bottom surface side of the lead frame 20 comes into close contact with the bottom surfaces of the conductor 10, the magnetic sensor 30, the signal processing IC 40, and the first sealing member 61.

The lead frame 20, the magnetic sensor 30, and the signal processing IC 40 may be roughened in advance, and step S112 may be omitted. In such a case, a lead frame 20 in which at least the conductor 10 and the portions of the plurality of device terminals 21 are coarsely plated may be used.

If the bottom surfaces of the conductor 10, the magnetic sensor 30, the signal processing IC 40, and the first sealing member 61 are not roughened and the second sealing member 62 is sufficiently in close contact with them, step S112 is omitted. You may. Further, step S112 may be omitted by roughening the bottom surfaces of the lead frame 20, the magnetic sensor 30, and the signal processing IC 40 in advance.

In step S114, the bottom surface side including at least the bottom surface of the lead frame 20, the magnetic sensor 30, and the signal processing IC 40 (in this example, only the bottom surface is included, but in step S108, only the top surface is included or a part of the side surface is added to the top surface. When the upper surface side including the upper surface is sealed by the first sealing member 61, the side surface or the rest of the side surface is included in addition to the bottom surface) is sealed by the second sealing member 62. Before performing post-cure of the first sealing member 61 formed in step S108, as shown in FIGS. 6A and 6B, the top surface of the lead frame 20 whose bottom surface has been roughened is turned upside down. It is housed in an open box-shaped formwork 73, and the box-shaped formwork 74 having an open bottom is pressed onto the formwork 73, and the internal space of the formwork 74 is closed by the bottom surface of the lead frame 20 to close the formwork. The second sealing member 62 is poured into the mold 74 through the through hole (not shown) of the 74. Here, as the second sealing member 62, a resin such as epoxy, which is the same insulating material as the first sealing member, is adopted. Further, a resin containing a filler may be used as the second sealing member 62. As a result, while the resin of the first sealing member 61 is softened beyond the glass transition point, the conductor 10 and the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40 included in the lead frame 20 are each. The bottom surface of the second sealing member 62 is covered with the second sealing member 62 and does not cover the bottom surface of the conductor 10 or the like. It is integrated and cured. By producing by such a procedure, when the cross section is observed later, the filler which is an inorganic material contained in the second sealing member 62 and has a size of 20 μm or more is particularly the first sealing member 61. And the feature that it does not exist so as to straddle the boundary portion of the second sealing member 62 can be observed. High withstand voltage can be obtained because an interface that can extend from the boundary between the conductor 10, the plurality of device terminals 21, the magnetic sensor 30, or the signal processing IC 40 is not formed on the integrated first and second sealing members 61 and 62. ..

In step S116, post-cure of the first and second sealing members 61 and 62 is performed. As a result, the first and second sealing members 61 and 62 integrally post-cure their boundary portions, thereby reducing the uncured ratio, forming a package 60, and the package 60 forms a magnetic sensor 30 and a signal. A portion where the processing IC 40 is separated from the conductor 10 and the plurality of device terminals 21 included in the lead frame 20 and internally, but the frame of the lead frame 20 and the terminal portion 11 of the conductor 10 and the plurality of device terminals 21 are connected to each other. Is sealed, leaving behind.

In addition, as described above, when the first and second sealing members 61 and 62 are post-cured at the same time after the formation of both of them, the boundary portions of the first and second sealing members 61 and 62 are integrated and they are integrated. It is effective that no interface is formed between them, but if the interface is not formed or is negligible even if it is formed, the first sealing member 61 is post-cured, and then the second sealing member 62 is posted. You may cure.

In step S118, the package 60 is diced. As shown in FIGS. 7A and 7B, the package 60 is turned upside down and attached onto the dicing tape 75, and the pattern exposed from the package 60, that is, the frame of the lead frame 20, the terminal portion 11 of the conductor 10, and the plurality of device terminals. The portion connecting with 21 is cut together with the outer edge of the first sealing member 61. As a result, the upper surface 11a of the terminal portion 11 of the conductor 10 and the upper surface 21a of the plurality of device terminals 21 are exposed flush with each other from the upper surface of the package 60 to form a connection terminal, thereby completing the current sensor 100.

According to the method for manufacturing the current sensor 100 according to the present embodiment, the lead frame 20 including the conductor 10 and the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40 are arranged on the support member 70 so as to be separated from each other. The upper surface side including at least the upper surface of each is sealed by the first sealing member 61, the support member 70 is removed, and then the bottom surface side other than the upper surface side including each bottom surface is sealed by the second sealing member 62. As a result, the magnetic sensor 30 that detects the magnetic field generated by the current flowing through the conductor 10 and the curved portion 13 of the conductor 10 through which the measured current flows by the package 60 in which the first and second sealing members 61 and 62 are integrated. The signal processing ICs 40 that process the output signal from the magnetic sensor 30 are separated from each other and are sealed so as to cover the entire outer surface of the respective outer surfaces. Since a expandable interface is not formed, a high withstand voltage can be obtained.

In the current sensor 100 according to the present embodiment, the package 60 is molded as a leadless package having no leads in the terminal portion 11 of the conductor 10 and the plurality of device terminals 21, but instead of this, the package 60 is molded. It may be molded as a package with leads.

In the current sensor 100 according to the present embodiment, the current flowing through the conductor 10 may be direct current or alternating current. Further, in the case of direct current, the direction of the energized current may be arbitrarily determined.

In the method for manufacturing the current sensor 100 according to the present embodiment, the package 60 is formed by resin molding using the molds 71 to 74, but the package may be formed by using a 3D printer instead. ..

The current sensor 100 according to the present embodiment may be used as a magnetic detection device that detects an external magnetic field and measures its strength without passing a current through the conductor 10. In such a case, it is not necessary to provide the conductor 10 in the package 60 as in the modification described later.

8A and 8B show the configuration of the Hall sensor 110 according to the modified example. Here, FIG. 8A shows the internal configuration of the Hall sensor 110 in a plan view, and FIG. 8B shows the cross-sectional configuration of the Hall sensor 110 with respect to the reference line BB in FIG. 8A. The Hall sensor 110 is an example of a magnetic detection device that detects an external magnetic field and measures its strength, and includes a magnetic sensor 30, a plurality of device terminals 21, wires 51, and a package 60. Each of these components may be configured in the same manner as those provided in the above-mentioned current sensor 100, and therefore, the same reference numerals will be used and the details will be omitted.

The magnetic sensor 30 is an example of a magnetic detection element that detects a magnetic field (that is, an external magnetic field) entering the Hall sensor 110. The magnetic sensor 30 is arranged in the center of the hall sensor 110. The magnetic sensor 30 is connected to a plurality of device terminals 21 by wire bonding, and uses a voltage corresponding to the detected magnetic field strength as an output signal, for example, a signal processing IC connected to the hall sensor 110 via the plurality of device terminals 21. Output to.

The plurality of device terminals 21 output the output signal of the magnetic sensor 30 to an external device. The plurality of device terminals 21 include four terminals as an example, and two terminals are arranged on both sides in the horizontal direction with respect to the magnetic sensor 30 so as to be vertically separated from each other.

The wire 51 includes four wires erected between the magnetic sensor 30 and the upper surfaces 21b of the plurality of device terminals 21, and outputs a detection signal of the magnetic sensor 30 via these four wires.

The package 60 seals and protects each component of the Hall sensor 110 except for a part of the plurality of device terminals 21. The package 60 separates the magnetic sensor 30 from the plurality of device terminals 21 and together with them covers the entire outer surface thereof and seals the inside thereof, thereby insulating from each of the plurality of device terminals 21. That is, the magnetic sensor 30 is sealed by covering the entire outer surface with the package 60 without being supported by contact with, for example, a substrate, a film, or the like arranged so as to be in contact with the device terminal 21. By embedding the magnetic sensor 30 in the package 60 apart from the plurality of device terminals 21, that is, by embedding them alone, the package 60 does not form an interface that can extend from the boundary of the magnetic sensor 30. , High withstand voltage can be obtained. Further, since the lead frame that supports the magnetic sensor 30 is not required, the Hall sensor 110 can be miniaturized.

The package 60 includes first and second sealing members 61 and 62 that seal the upper surface side including at least the upper surface side of the plurality of device terminals 21 and the magnetic sensor 30 and the bottom surface side including at least the bottom surface, respectively. Similar to the current sensor 100 described above, the bottom surfaces of the plurality of device terminals 21 and the magnetic sensor 30 are supported, the upper surface side thereof is covered with the first sealing member 61, and the magnetic sensor 30 is turned upside down to the bottom surface side thereof. By covering the magnetic sensor 30 with the second sealing member 62, the magnetic sensor 30 can be separated from the plurality of device terminals 21 and the entire outer surface thereof can be covered and embedded in the package 60 by itself and sealed. The first and second sealing members 61 and 62 are preferably made of the same material, but may be formed by using different materials.

9A and 9B show the configuration of the hall IC 111 according to the modified example. Here, FIG. 9A shows the internal configuration of the Hall IC 111 in a plan view, and FIG. 9B shows the cross-sectional configuration of the Hall IC 111 with respect to the reference line BB in FIG. 9A. The Hall IC 111 is an example of a magnetic detection device that detects an external magnetic field and measures its strength, and includes a plurality of device terminals 21, a magnetic sensor 30, a signal processing IC 40, wires 51, 52, and a package 60. Each of these components may be configured in the same manner as those provided in the above-mentioned current sensor 100, and therefore, the same reference numerals will be used and the details will be omitted.

The magnetic sensor 30 is an example of a magnetic detection element that detects a magnetic field (that is, an external magnetic field) entering the Hall IC 111. The magnetic sensor 30 is arranged on the right side of the center of the hall IC 111. The magnetic sensor 30 is connected to the signal processing IC 40 by wire bonding, and outputs a voltage corresponding to the detected magnetic field strength to the signal processing IC 40 as an output signal.

The signal processing IC 40 processes the signal output by the magnetic sensor 30 to calculate the strength of the magnetic field entering the Hall IC 111. In the modified example, the signal processing IC 40 adopts a hybrid configuration as a device separate from the magnetic sensor 30. The signal processing IC 40 is arranged adjacent to the magnetic sensor 30 in the center of the hall IC 111. The signal processing IC 40 is connected to a plurality of device terminals 21 by wire bonding, outputs the calculation result of the magnetic field strength through them, and further inputs parameter settings and the like. Any one of the plurality of device terminals 21 may be used as the ground terminal.

In the Hall IC 111 according to the modified example, the signal processing IC 40 hybridly configured as a device separate from the magnetic sensor 30 is adopted, but instead of this, the signal processing formed on the same semiconductor substrate as the magnetic sensor 30 is adopted. A signal processing IC provided with a circuit, that is, a signal processing IC having a monolithic configuration may be adopted together with the magnetic sensor 30. Further, a hybrid type signal processing IC in which the magnetic sensor 30 and the signal processing IC 40 are mounted on the same circuit board may be adopted.

The plurality of device terminals 21 output the calculation result of the magnetic field strength output from the signal processing IC 40 to the external device, and input the signal for setting the correction parameter from the external device to the signal processing IC 40. The plurality of device terminals 21 include five terminals as an example, three terminals are vertically separated on the left side in the horizontal direction, and two terminals are vertically separated on the right side in the horizontal direction with the magnetic sensor 30 in between. And each is arranged.

The wire 51 includes four wires erected between the magnetic sensor 30 and the signal processing IC 40, drives the magnetic sensor 30 through these wires, and sends the detection signal to the signal processing IC 40. The wire 52 includes three wires erected between the signal processing IC 40 and the upper surface 21b of the plurality of device terminals 21, and outputs the calculation result of the signal processing IC 40 via these three wires.

The package 60 seals and protects each component of the Hall IC 111 except for a part of the plurality of device terminals 21. The package 60 separates each of the magnetic sensor 30 and the signal processing IC 40 from the plurality of device terminals 21 and together with them covers the entire outer surface of each and seals the inside thereof, thereby insulating from each of the plurality of device terminals 21. .. That is, the magnetic sensor 30 (including a member in contact with the magnetic sensor 30 such as a signal processing IC and a circuit board mounted on the same circuit board as the signal processing IC 40) is in contact with, for example, the device terminal 21. The entire outer surface is covered with the package 60 and sealed without being in contact with and supported by the arranged substrate, film, or the like. By embedding the magnetic sensor 30 in the package 60 apart from the plurality of device terminals 21, that is, by embedding them alone, the package 60 does not form an interface that can extend from the boundary of the magnetic sensor 30. , High withstand voltage can be obtained. Further, by eliminating the need for a lead frame that supports the magnetic sensor 30, the hall IC 111 can be miniaturized.

The package 60 includes a plurality of device terminals 21, a magnetic sensor 30, and first and second sealing members 61 and 62 that seal the upper surface side including at least the upper surface side and the bottom surface side including at least the bottom surface side of the signal processing IC 40, respectively. .. The bottom surfaces of the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40 are supported, the upper surface side thereof is covered with the first sealing member 61, and the bottom surfaces of the magnetic sensor 30 and the signal processing IC 40 are turned upside down. By covering the side with the second sealing member 62, the magnetic sensor 30 and the signal processing IC 40 can be separated from the plurality of device terminals 21 and the entire outer surface thereof can be covered and embedded and sealed in the package 60 by itself. can. The first and second sealing members 61 and 62 are preferably made of the same material, but may be formed by using different materials.

A method of manufacturing the Hall IC 111 according to a modified example will be described. FIG. 10 shows the flow of the manufacturing process of the Hall IC 111 according to the modified example.

In step S202, a lead frame 120 including a pattern of a plurality of device terminals 21 is formed. As shown in FIGS. 11A and 11B, the lead frame 120 is a rectangular metal frame, and inside the lead frame 120, three patterns of a plurality of device terminals 21 are connected to their left ends to the left frame of the frame. The two patterns are included by connecting their right ends to the right frame of the frame, and the sheet-like support member 70 is included as its bottom surface with its outer edge attached to the lower surface of the lead frame 120. The manufacturing method of the lead frame 120 is the same as that of the lead frame 20 described above.

In step S204, the magnetic sensor 30 and the signal processing IC 40 are installed inside the lead frame 120 apart from the lead frame 120. As shown in FIGS. 12A and 12B, on the support member 70 provided as the bottom surface of the lead frame 120, the magnetic sensor 30 is placed on the right side of the center of the lead frame 120 in a plan view, and the signal processing IC 40 is placed in the lead frame 120 in a plan view. It is arranged in the center of the device so as to be separated from the plurality of device terminals 21. The magnetic sensor 30 and the signal processing IC 40 are fixed by an adhesive layer formed on the surface of the support member 70.

In step S206, as shown in FIGS. 12A and 12B, the magnetic sensor 30 and the signal processing IC 40 are wire-bonded by the wire 51, and the signal processing IC 40 and the plurality of device terminals 21 are wire-bonded by the wire 52.

In step S208, the upper surface side including at least the upper surface of the lead frame 120, the magnetic sensor 30, and the signal processing IC 40 (in this example, the side surface is included in addition to the upper surface, but only the upper surface is included or a part of the side surface is added to the upper surface. May be included) is sealed by the first sealing member 61. As shown in FIGS. 13A and 13B, the lead frame 120 in which the magnetic sensor 30 and the signal processing IC 40 are arranged on the support member 70 is housed in a box-shaped formwork 71 having an open upper surface, and a plate-shaped lid is provided. The body 72 is pressed onto the mold 71 to close the internal space of the mold 71 including the lead frame 120, and the sealing member is poured into the mold 71 through the through hole (not shown) of the mold 71. Here, a resin such as epoxy can be adopted as the first sealing member 61. Further, a resin containing a filler may be used as the first sealing member 61. Further, in order to prevent resin bleeding onto the upper surface 21a of the device terminal 21, the surface of the lid 72 on the mold 71 side may be covered with a resin film (for example, a Teflon (registered trademark) film).

In step S210, the support member 70 is removed from the lead frame 120. The lead frame 120 whose upper surface side is sealed by the first sealing member 61 is taken out from the mold 71, turned upside down, and the support member 70 is peeled off from the lower surface of the lead frame 120.

In step S212, the bottom surfaces of the lead frame 120 (the portion of the plurality of device terminals 21) from which the support member 70 has been removed, the magnetic sensor 30, the signal processing IC 40, and the first sealing member 61 are roughened. Here, as a method for rough surface processing, for example, wet blast treatment or plasma treatment can be adopted.

In step S214, the bottom surface side including at least the bottom surface of the lead frame 120, the magnetic sensor 30, and the signal processing IC 40 (in this example, only the bottom surface is included, but in step S208, only the top surface is included or a part of the side surface is added to the top surface. When the upper surface side including the upper surface is sealed by the first sealing member 61, the side surface or the rest of the side surface is included in addition to the bottom surface) is sealed by the second sealing member 62. Before performing post-cure of the first sealing member 61 formed in step S208, as shown in FIGS. 14A and 14B, the top surface of the lead frame 120 whose bottom surface has been roughened is turned upside down. It is housed in an open box-shaped formwork 73, and the box-shaped formwork 74 with an open bottom is pressed onto the formwork 73, and the internal space of the formwork 74 is closed by the bottom surface of the lead frame 120, and the formwork is closed. The second sealing member 62 is poured into the mold 74 through the through hole (not shown) of the 74.

In step S216, post-cure of the first and second sealing members 61 and 62 is performed. As a result, the first and second sealing members 61 and 62 integrally post-cure their boundary portions, thereby reducing the uncured ratio, forming a package 60, and the package 60 forms a magnetic sensor 30 and a signal. The processing IC 40 is sealed inside, away from the plurality of device terminals 21 included in the lead frame 20, except for the frame of the lead frame 120 and the portion connecting the frame and the plurality of device terminals 21.

In step S218, the package 60 is diced. As shown in FIGS. 15A and 15B, the package 60 is turned upside down and attached onto the dicing tape 75, and the pattern exposed from the package 60, that is, the portion connecting the frame of the lead frame 120 and the plurality of device terminals 21 is formed. It is cut together with the outer edge of the first sealing member 61. As a result, the upper surfaces 21a of the plurality of device terminals 21 are exposed flush with each other from the upper surface of the package 60 to form connection terminals, thereby completing the hall IC 111.

According to the method for manufacturing the Hall IC 111 according to the modified example, the lead frame 120 including the plurality of device terminals 21, the magnetic sensor 30, and the signal processing IC 40 are arranged on the support member 70 so as to be separated from each other, and at least the upper surface of each is arranged. The upper surface side including the upper surface side is sealed with the first sealing member 61, the support member 70 is removed, and then the bottom surface side other than the upper surface side including the bottom surface side is sealed with the second sealing member 62. In the package 60 in which the second sealing members 61 and 62 are integrated, the magnetic sensor 30 and the signal processing IC 40 for processing the output signal from the magnetic sensor 30 are separated from each other and are sealed by covering the entire outer surface of each. Since the package 60 in which the magnetic sensor 30 and the signal processing IC 40 are embedded does not have an interface that can expand from the boundary with them, a high withstand voltage can be obtained.

The Hall sensor 110 according to the modified example can also be manufactured by the same method as the manufacturing method of the Hall IC 111. However, it is not necessary to install the signal processing IC 40 inside the lead frame 120 in step S204, and the processing related to the signal processing IC 40 may be omitted in steps S206 to S218 accordingly.

Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that the form with such changes or improvements may be included in the technical scope of the present invention.

The order of execution of each process such as operation, procedure, step, step in the device, system, program, and method shown in the claims, specification, and drawings is particularly "before" and "prior to". It should be noted that it can be realized in any order unless the output of the previous process is used in the subsequent process. Even if the scope of claims, the specification, and the operation flow in the drawings are explained using "first", "next", etc. for convenience, it means that it is essential to carry out in this order. It's not a thing.

10 ... Conductor, 10a ... Bottom surface, 11 ... Terminal part, 11a ... Top surface, 12 ... Leg part, 13 ... Curved part, 20 ... Lead frame, 21 ... Device terminal, 21a, 21b ... Top surface, 30 ... Magnetic sensor, 31 ... Insulation member, 40 ... signal processing IC, 41 ... insulation member, 51, 52 ... wire, 60 ... package, 61 ... first sealing member, 62 ... second sealing member, 70 ... support member, 71 ... mold, 72 ... lid, 73 ... mold, 74 ... mold, 75 ... dicing tape, 100 ... current sensor (current detector), 110 ... hall sensor, 111 ... hall IC, 120 ... lead frame.

Claims (10)

A magnetic sensor that detects a magnetic field and has a plurality of outer surfaces including at least a top surface and a bottom surface.
A sealing member that covers and seals all of the plurality of outer surfaces of the magnetic sensor,
Equipped with
The sealing member includes a first sealing member that seals the upper surface side including the upper surface of the magnetic sensor, and a second sealing member that seals the bottom surface side including the bottom surface of the magnetic sensor.
The bottom surface of the magnetic sensor and the bottom surface of the first sealing member facing the same direction as the bottom surface are roughened.
Said second sealing member, that abolish seal over the bottom surface of the bottom surface and the first sealing member of the magnetic sensor, the magnetic detection device. Wherein the bottom surface of the magnetic sensor, the first insulating member Ru provided with a roughened, the magnetic detection device according to claim 1. The magnetic detection device according to claim 2 , wherein the first insulating member is a die attach film. Further equipped with a signal processing IC chip that processes the signal output by the magnetic sensor,
The signal processing IC chip has a plurality of outer surfaces including at least an upper surface and a lower surface facing the same direction as the upper surface and the bottom surface of the magnetic sensor, respectively.
The sealing member further comprises any one of claims 1 to 3 , wherein the signal processing IC chip is separated from the magnetic sensor and covers and seals the plurality of outer surfaces of the signal processing IC chip. Magnetic detector. The bottom surface of the signal processing IC chip, the second insulating member is provided which is roughened, the second sealing member further, that abolish seal covers the bottom surface of the signal processing IC chip, according to claim 4 The magnetic detector according to. The magnetic detection device according to claim 5 , wherein the second insulating member is a die attach film. The magnetic sensor includes a magnetic sensor, further, magnetic formed detection elements the same semiconductor substrate and the magnetic detection element Bei El the signal processing circuit for processing a signal outputted from the claims 1 to 3 The magnetic detection device according to any one of the above. The magnetic detection device according to any one of claims 1 to 7.
With a conductor through which the measured current flows,
The magnetic sensor detects a magnetic field generated by a current flowing through the conductor, and detects the magnetic field.
The conductor has an upper surface and a lower surface facing in the same direction as the upper surface and the bottom surface of the magnetic sensor, respectively.
In the sealing member, the first sealing member seals the upper surface side including at least a part of the upper surface of the conductor, and the second sealing member seals the bottom surface side including at least a part of the bottom surface of the conductor. A current detector that seals at least a portion of the conductor and separates the magnetic sensor from the conductor by sealing. At least a portion of the bottom surface, Ru roughened by Tei, current detecting apparatus according to claim 8 of the conductor. The conductor through which the measured current flows and
A magnetic sensor that detects the magnetic field generated by the current flowing through the conductor, and
It comprises at least a part of the conductor and a sealing member for sealing the magnetic sensor .
At least a portion of the conductor has a top surface and a bottom surface.
The magnetic sensor has a plurality of outer surfaces including at least a top surface and a bottom surface.
The sealing member seals all of the plurality of outer surfaces of the magnetic sensor.
The sealing member includes a first sealing member that seals at least a part of the conductor and the upper surface side including the upper surface of each of the magnetic sensors, and at least a part of the conductor and the bottom surface of each of the magnetic sensors. Has a second sealing member that seals the bottom side including
The bottom surface of at least a part of the conductor, the bottom surface of the magnetic sensor, and the bottom surface of the first sealing member facing the same direction as the bottom surface of the conductor and the magnetic sensor are roughened.
It said second sealing member is at least part of the bottom surface of the conductor, the bottom surface of the magnetic sensor, and that abolish sealing covers a bottom of the first sealing member, the current detecting device.

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