JP6569288B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device obtained by the manufacturing method. More specifically, the present invention relates to a semiconductor device manufacturing method for manufacturing a semiconductor device that is highly demanded for miniaturization and high density sufficiently efficiently and at low cost, and a semiconductor device obtained by the manufacturing method.

  For the purpose of increasing the density and performance of semiconductor devices, a mounting form in which semiconductor elements with different performances are mixedly mounted in a single package has been proposed. From the viewpoint of cost reduction, high-density interconnect technology between semiconductor elements has been proposed. It has become important.

  In the three-dimensional mounting mode, a package-on-package structure in which different packages are stacked on each other by flip chip mounting is widely used for smartphones and tablet terminals (for example, Non-Patent Document 1 and Non-Patent Document). 2). As a form for mounting at higher density, packaging technology using an organic substrate having high-density wiring, packaging technology using silicon or glass interposer, packaging technology using a through silicon via (TSV), embedded in a substrate There has been proposed a package technology or the like that uses the semiconductor element for transmission between semiconductor elements (see, for example, Patent Document 1).

  In addition, in order to conduct the semiconductor elements at high density, the pitch of the electrical connection portions between the semiconductor elements tends to be designed to be narrower.

Special table 2012-529770 gazette

Application of Through Mold Via (TMV) as PoP Base Package, Electronic Components and Technology Conference (ECTC), 2008 Advanced Low Profile PoP Solution with Embedded Wafer Level PoP (eWLB-PoP) Technology, ECTC, 2012

A package using an organic substrate having a high-density wiring is difficult to obtain a sufficient yield because fine wiring needs to be stacked. Further, since a package using a silicon or glass interposer requires a large area interposer, there are problems such as warpage suppression and cost reduction. Furthermore, even if a silicon or glass through electrode is used for high density, there are problems such as yield and cost reduction.
In addition, underfill used between semiconductor elements with narrow electrical connections is difficult to apply in the conventional method in which the capillary underfill is filled after mounting the semiconductor elements because of insufficient filling and damage to the semiconductor elements.
In addition, even when the underfill is applied on one semiconductor element and the other semiconductor element is crimped and connected, the resin may get caught between the bumps, leading to poor conduction, or with an underfill in advance. There is a problem that a process for manufacturing a semiconductor element is required and the process becomes complicated.

  An object of the present invention is to provide a manufacturing method capable of manufacturing a semiconductor device capable of high-density transmission with good yield and low cost.

According to the present invention, the following semiconductor device manufacturing method and the like are provided.
1. (I) fixing a plurality of first semiconductor elements on a carrier;
(II) forming a photosensitive resin film by collectively sealing the first semiconductor element with a photosensitive resin material;
(III) exposing and developing the photosensitive resin film to form an opening for opening the electrode portion of the first semiconductor element;
(IV) In the opening, the electrode of the first semiconductor element and the second semiconductor element are electrically connected via the connection electrode so as to straddle two or more semiconductor elements of the plurality of first semiconductor elements. A method for manufacturing a semiconductor device comprising the step of connecting.
2. Furthermore, the manufacturing method of the semiconductor device of 1 provided with the process of peeling the said carrier.
3. 3. The method for producing a semiconductor device according to 1 or 2, wherein the photosensitive resin material is a film-like material or a sheet-like material.
4). The manufacturing method of the semiconductor device in any one of 1-3 whose film thickness of the pattern cured film formed at the process of said (III) is 50-400 micrometers.
5. The manufacturing method of the semiconductor device in any one of 1-4 whose said photosensitive resin material is a negative type.
The semiconductor device manufactured using the manufacturing method in any one of 6.1-5.

  According to the present invention, it is possible to provide a manufacturing method capable of manufacturing a semiconductor device capable of high-density transmission with high yield and low cost.

It is sectional drawing which shows typically the state which fixed the several 1st semiconductor element to the carrier. It is sectional drawing which shows typically the state which sealed the some 1st semiconductor element with the photosensitive resin material, and formed the photosensitive resin film. It is sectional drawing which shows typically the state which exposed and developed the photosensitive resin film and formed the opening part which opens the electrode part of a said 1st semiconductor element. The state which electrically connected the electrode of the 1st semiconductor element and the 2nd semiconductor element via the electrode for connection so that two or more semiconductor elements of a plurality of said 1st semiconductor elements may be straddled is shown. It is sectional drawing. It is sectional drawing which shows typically the state which mounted the metal member further. It is sectional drawing which shows typically the state which peeled the carrier, mounted the semiconductor device on the board | substrate, and was filled with the underfill. It is a top view of the semiconductor device which peeled the carrier. It is sectional drawing which shows typically the semiconductor device containing the laminated body using a silicon penetration electrode (TSV). It is a top view which shows typically the semiconductor device which mounted the 1st semiconductor element and the 2nd semiconductor element on the board | substrate.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

  In addition, when terms such as “left”, “right”, “front”, “back”, “top”, “bottom”, “upward”, “downward” are used, these are intended for explanation. It does not necessarily mean that this relative position is permanent.

The method for manufacturing a semiconductor device of the present invention includes the following steps:
(I) Step of fixing a plurality of first semiconductor elements on a carrier (II) Step of forming a photosensitive resin film by collectively sealing the first semiconductor elements with a photosensitive resin material (III) The photosensitive A step of exposing and developing the conductive resin film to form an opening for opening the electrode portion of the first semiconductor element (IV) so that the opening extends over two or more of the plurality of first semiconductor elements. Electrically connecting the electrode of the first semiconductor element and the second semiconductor element via the connection electrode

In the method for manufacturing a semiconductor device of the present invention, since a plurality of semiconductor elements are collectively sealed with a photosensitive resin material, the handling property is high. Further, by using a photosensitive resin material used as a sealing material as a pattern cured film by exposure and development, it is used as an underfill by a method that can suppress the biting of the metal connection part (part not covered by the opening). be able to.
As described above, the method for manufacturing a semiconductor device of the present invention is low in cost because the pattern cured film using the photosensitive resin material functions not only as a sealing portion for a plurality of semiconductor elements but also as an underfill. This is a method for manufacturing a semiconductor device that can be manufactured.

  A method for manufacturing the semiconductor device 101 shown in FIG. 5 according to an embodiment of the present invention will be described. The method for manufacturing a semiconductor device according to the present invention is particularly suitable in a form in which miniaturization and increase in the number of pins are required. In particular, the manufacturing method of the present invention is suitable for a package form that requires an interposer for mixing different types of semiconductor elements.

A method for manufacturing the semiconductor device 101 will be described with reference to FIGS.
First, a plurality of first semiconductor elements 2 are fixed on the carrier 1 so that the electrodes 7 of the first semiconductor elements 2 are exposed on the surface (see FIG. 1). The electrode 7 is a metal connection part of the first semiconductor element.

The carrier 1 is not particularly limited, and is a silicon plate, a glass plate, a SUS plate, a glass cloth-containing substrate, or the like, and a substrate made of a highly rigid material is preferable. Also, a resin layer for fixing the first semiconductor element 2 on the carrier or a metal thin film with a resin layer can be formed. Moreover, it is preferable to embed a silicon plate in the carrier because of low warpage.
For the resin layer, for example, a resin containing a nonpolar component such as silicone or fluorine, or a resin containing a component that expands or foams when heated can be used.

  The carrier 1 may be either a wafer shape or a panel shape. The size of the carrier 1 is not particularly limited, and a wafer having a diameter of 200 mm, a diameter of 300 mm, or a diameter of 450 mm or a panel of 300 to 700 mm □ is preferably used.

  The thickness of the carrier 1 is preferably in the range of 0.2 mm to 2.0 mm. When the thickness of the carrier 1 is less than 0.2 mm, the handleability during the process tends to decrease. On the other hand, when the thickness of the carrier 1 exceeds 2.0 mm, the material cost tends to increase.

As the first semiconductor element 2, a CPU, a graphic processing unit GPU, a volatile memory such as a DRAM or SRAM, a nonvolatile memory such as a flash memory, an RF chip, or a semiconductor element having a combination of these is preferably used.
Further, as the first semiconductor element 2, a semiconductor element stacked body in which a plurality of semiconductor elements are stacked can also be used. Specifically, a semiconductor element stacked body stacked using TSV can be used. FIG. 8 shows an example in which a part of the semiconductor elements used in the semiconductor device 101 is the semiconductor element stacked body 12.

  The thickness of the first semiconductor element 2 is preferably 400 μm or less from the viewpoint of reducing warpage by reducing the insulating material, and more preferably 200 μm or less from the viewpoint of further reducing the thickness of the package. Further, from the viewpoint of handleability, the thickness of the first semiconductor element 2 is preferably 30 μm or more.

  In order to arrange the first semiconductor element 2 at an accurate position of the carrier 1, it is preferable that the first semiconductor element 2 and the carrier 1 have an alignment mark.

Next, a photosensitive resin film 3 is formed so as to cover the first semiconductor element 2 using a photosensitive resin material (FIG. 2). The photosensitive resin material to be used is not particularly limited, but a liquid, solid, film-like or sheet-like photosensitive resin material can be used. Among these, a film-like or sheet-like photosensitive resin material is preferable in that it can be sealed at a low warpage and at a low cost, and further avoids contamination in a clean room environment.
Sealing with the film-like photosensitive resin material may be either a laminate method or a compression method.

  As the photosensitive resin material, a negative photosensitive resin material is preferable from the viewpoint of less outgas during thermosetting and less deformation of the pattern. Although it does not specifically limit as a negative photosensitive resin material, Photosensitive insulating materials, such as a conventionally well-known photosensitive adhesive, solder resist, and a photosensitive underfill, can be illustrated.

The photosensitive resin material preferably contains a thermosetting component, and may be cured by further heating after sealing. The heating conditions are, for example, a heating temperature of 120 to 180 ° C. and 30 minutes to 3 hours.
Moreover, the average thermal expansion coefficient from room temperature to 120 degreeC of the pattern cured film (sealing part) obtained by heat-curing the photosensitive resin material containing a thermosetting component is 25 * 10 < ^-6 > / degreeC to 100 * 10 < ^- >. It is preferably in the range of ⁶ / ° C. When the average coefficient of thermal expansion is less than 25 × 10 ⁻⁶ / ° C., the film obtained from the photosensitive resin material may become brittle. On the other hand, if it exceeds 100 × 10 ⁻⁶ / ° C., the resulting package is likely to warp, and the handleability may be reduced.

  From the viewpoint of handleability of the semiconductor element encapsulated package after the pattern cured film is formed, the room temperature elastic modulus of the encapsulated portion (pattern cured film) after thermally curing the photosensitive sealing material is in the range of 1 GPa to 10 GPa. Is preferred. When the room temperature elastic modulus is less than 1 GPa, the self-holding property of the sealing portion becomes poor and handling tends to be difficult. Further, if the room temperature elastic modulus is more than 10 GPa, the sealing portion becomes brittle and tends to break easily.

  The process of forming a photosensitive resin film by encapsulating with a photosensitive resin material can be manufactured at a lower cost than a compression mold using a liquid or solid material, and there is less damage to the semiconductor element. A laminating process is preferred. When the said process is a lamination process, as a photosensitive resin material which can be used, a film-form photosensitive resin can be used, for example.

  The step is preferably a low-temperature step, and the photosensitive material is preferably a film-like photosensitive resin that can be sealed at 40 to 120 ° C. A photosensitive resin material having a sealable temperature of less than 40 ° C. has a strong tack at normal temperature and there is a possibility that the handleability may be deteriorated. A photosensitive resin material having a sealable temperature exceeding 120 ° C. warps after sealing. May increase.

Next, the photosensitive resin film 3 is exposed and developed to form a patterned cured film 3 ′ in which a part of the photosensitive resin film 3 is opened, and the electrode 7 of the first semiconductor element 2 is exposed to expose the semiconductor element sealing package. 100 is obtained (FIG. 3). In addition, although the part which does not correspond to the electrode 7 is also opening about the opening part on the 1st semiconductor element of FIG. 3, this is because it is sectional drawing, These are also the opening parts which have exposed the electrode. is there.
As an exposure method for the photosensitive resin film 3, a normal projection exposure method, a contact exposure method, a direct drawing exposure method, or the like can be used. As a developing method, it is preferable to use an alkaline aqueous solution such as sodium carbonate or TMAH. Moreover, hardening can also be advanced by heating a pattern cured film further.

For alignment of the exposure, alignment marks formed on the first semiconductor element 2 or the carrier 1 can be used. At this time, in order to ensure the alignment mark recognizability, the photosensitive resin film preferably has a maximum transmittance at 400 to 800 nm of 50% or more, and 70% or more when the film thickness is 50 μm. Is more preferable.
Note that when the maximum transmittance of the photosensitive resin film (sealing portion) is less than 50%, the alignment mark recognition may be difficult. If the maximum transmittance is 70% or more, high positional accuracy can be obtained, and a high yield can be obtained.
The maximum transmittance can be measured by reading the transmittance at 400 to 800 nm using a spectrophotometer (manufactured by Hitachi High-Technologies Corporation, trade name “U-3310”).

  In the exposure and development process, it is preferable to provide not only the opening for exposing the electrode 7 but also the opening 11 for exposing the carrier 1. For example, by providing an opening in the periphery of the first semiconductor element 2, the semiconductor element can be singulated without dicing (FIGS. 3 and 7). This process eliminates the need to consider the yield reduction due to resin cracking and peeling due to the dicing process, and allows the package to be manufactured efficiently and at low cost.

  When opening the photosensitive resin film, after patterning the resin film in the periphery of the first semiconductor element to provide a via-shaped opening, the via formed by seed formation and plating is filled with a conductor such as copper. Then, a Through Mold Via (TMV) structure may be used.

Next, the second semiconductor element 4 is mounted on the opening of the pattern cured film 3 ′ so as to straddle the two adjacent first semiconductor elements 2 (FIG. 4). At this time, the second semiconductor element 4 is electrically connected to the electrode 7 of each first semiconductor element via the connection electrode portion 6.
Compared to the case where the second semiconductor element is mounted in a state where the first semiconductor element is individualized by preparing the semiconductor element sealing package 100 in which the plurality of first semiconductor elements 2 are sealed in advance. It is possible to prevent deformation such as misalignment and deflection when the second semiconductor element is mounted. In addition, the handleability is improved even after mounting the second semiconductor element. In addition, since unnecessary resin in the connection electrode portion is removed by exposure and development, a good connection body with less biting of the photosensitive resin material can be obtained.

As the second semiconductor element, a system-on-package, a silicon photonics chip, a MEMS, a sensor chip, or the like can be used.
Since the second semiconductor element is obtained by the existing silicon process technology, the interconnect pitch and width are higher than those formed in the organic substrate. Therefore, by using this structure, an excellent interconnect density between semiconductor elements can be obtained.

Examples of the connecting electrode portion 6 and the electrode 7 include gold bumps and copper bumps formed by plating, bumps formed by soldering on copper, and copper exposed by polishing.
The electrode part 6 and the electrode 7 for connection were formed by the gold stud bump formed using a gold wire, the metal ball fixed to the electrode pad by thermocompression using ultrasonic waves as necessary, and plating or vapor deposition. A bump or the like may be used.
The connecting electrode portion 6 and the electrode 7 do not need to be made of a single metal, and may include a plurality of metals. The connection electrode portion 6 and the electrode 7 may each contain gold, silver, copper, nickel, indium, palladium, tin, bismuth, or the like. Moreover, the connection electrode part 6 and the electrode 7 may each be a laminate including a plurality of metal layers.

  When mounting the second semiconductor element 4, it is preferable that the photosensitive resin material for forming the pattern cured film 3 ′ to fill the opening has thermal fluidity. It is preferable that the minimum melt viscosity after exposure of the photosensitive resin material is 10,000 Pa · s or less in that a good metal connection and void can be achieved with a low load, and 5000 Pa · in that a good alloy can be formed in the metal connection portion. More preferably, it is s or less. Moreover, it is preferable that the minimum melt viscosity after exposure of the photosensitive resin material is 10 Pa · s or more in that the deformation of the electrode portion can be suppressed.

  The minimum melt viscosity of the photosensitive resin material is obtained by laminating the photosensitive resin material on the film, and then preparing an exposed film with a cured film. The viscoelasticity measuring device (Rheometrics Scientific F.E. It can be read by the minimum value of the melt viscosity at 80 ° C. to 200 ° C. measured using a product name “ARES” manufactured by Co., Ltd. At the time of measurement, a parallel plate having a diameter of 8 mm is used as a measurement plate, and measurement conditions are preferably a heating rate of 5 ° C./min, a measurement temperature of −50 ° C. to 300 ° C., and a frequency of 1 Hz.

As a method of pressing the second semiconductor element 4 and the semiconductor element sealing package 100 after mounting the second semiconductor element, the separated second semiconductor element 4 and the individual semiconductor element sealing package 100 are connected. And a method of connecting the separated second semiconductor element 4 and the semiconductor element sealing package 100 fixed to a panel or a wafer. From the viewpoint of manufacturing cost and handleability, the latter is preferred. Is preferred.
The pressure bonding can usually be performed at 80 to 350 ° C. for 3 to 30 seconds. When the pressure bonding temperature is lower than 220 ° C., a good metal connection state can be achieved by the reflow process. From the viewpoint of more efficiently manufacturing a package, it is most preferable to make a metal connection by a reflow process after temporarily bonding the second semiconductor element 4 that has been singulated and the semiconductor device 100 in a panel or wafer state at 150 ° C. or lower. preferable.

Next, a metal member 9 for electrical connection such as a solder ball is mounted on the electrode 7 (FIG. 5). The metal member 9 functions as a member for connecting to the substrate 8 described later.
Mounting of the metal member 9 for electrical connection can be easily performed using a commercially available N ₂ reflow apparatus or the like.

The method for manufacturing a semiconductor device of the present invention preferably includes a step of peeling the carrier 1.
The timing of the carrier peeling process is not particularly limited as long as there is no problem in the handling of the sealed semiconductor element, but after mounting the metal member 9 for electrical connection (FIG. 5) (process (IV) The carrier 1 is preferably peeled off after). On the other hand, if there is a problem in warpage, handling property, and heat resistance of the sealing portion formed on the carrier 1, and it is difficult to make a good connection in the process of mounting the second semiconductor element (FIG. 4), After patterning the conductive resin material (FIG. 3) (after step (III)), the carrier 1 can be peeled off.
Although it does not restrict | limit especially as a peeling method of a carrier, Peel peeling, slide peeling, heat peeling, etc. are mentioned. Moreover, it can also wash | clean with a solvent, plasma, etc. after peeling.

A top view of the semiconductor device 101 manufactured by the above method is shown in FIG.
Since the semiconductor device of the present invention uses a semiconductor element (second semiconductor element) for transmission between semiconductor elements (first semiconductor element), high-speed communication is possible.

FIG. 6 is a cross-sectional view showing a state where the semiconductor device 101 from which the carrier 1 has been peeled off and the substrate 8 are mounted via the metal member 9 and the gap between the semiconductor device 101 and the substrate 8 is filled with the underfill 10.
Although it does not specifically limit as the board | substrate 8, Silicon, a glass interposer, the organic interposer which has fine wiring, a semiconductor element, the organic board | substrate with which glass was embedded, a fine wiring board, etc. are mentioned.
A method for filling the underfill 10 is not particularly limited. After the underfill is applied to the semiconductor device 101 or the substrate 8, a method for connecting the semiconductor device 101 and the substrate 8, or after the semiconductor device 101 and the substrate 8 are pressed together There is a method of injecting underfill by a mold or capillary method.

  The method for manufacturing a semiconductor device according to an embodiment of the present invention has been described above. However, the present invention is not limited to the above-described embodiment, and modifications may be made as appropriate without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 1 Carrier 2 1st semiconductor element 3 Photosensitive resin film 3 'Pattern cured film (sealing part)
4 Second semiconductor element 6 Electrode portion for connection 7 Electrode (metal connection portion)
DESCRIPTION OF SYMBOLS 8 Board | substrate 9 Metal member for electrical connection 10 Underfill 11 Opening part which exposes carrier 12 Semiconductor element laminated body 100 Semiconductor element sealing package 101 Semiconductor device

Claims (5)

(I) fixing a plurality of first semiconductor elements on a carrier;
(II) forming a photosensitive resin film by collectively sealing the first semiconductor element with a photosensitive resin material;
(III) exposing and developing the photosensitive resin film to form an opening for opening the electrode portion of the first semiconductor element;
(IV) In the opening, the electrode of the first semiconductor element and the second semiconductor element are electrically connected via the connection electrode so as to straddle two or more semiconductor elements of the plurality of first semiconductor elements. A method of manufacturing a semiconductor device comprising a connecting step ,
A method for manufacturing a semiconductor device, wherein the photosensitive resin material has a minimum melt viscosity of 10,000 Pa · s or less after exposure .   Furthermore, the manufacturing method of the semiconductor device of Claim 1 provided with the process of peeling the said carrier.   The method for manufacturing a semiconductor device according to claim 1, wherein the photosensitive resin material is a film-like material or a sheet-like material.   The method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein a thickness of the pattern cured film formed in the step (III) is 50 to 400 µm.   The method for manufacturing a semiconductor device according to claim 1, wherein the photosensitive resin material is a negative type.

Images