JP5650281B2 - Plasma processing method and plasma processing apparatus - Google Patents

Description

The present invention relates to a substrate mounting table for mounting a substrate to be processed in a plasma processing chamber, a plasma processing method for a substrate to be processed, and a plasma processing apparatus.

Plasma processing apparatuses are widely used as apparatuses for etching, deposition, oxidation, sputtering, and the like in manufacturing processes of semiconductor devices and FPDs (Flat Panel Displays). A plasma etching apparatus, which is one of plasma processing apparatuses, has an upper electrode and a lower electrode arranged in parallel in a processing vessel or reaction chamber, and a substrate to be processed (semiconductor wafer, glass substrate, etc.) is placed on the lower electrode. In addition, a high-frequency voltage for plasma generation is applied to the upper electrode or the lower electrode via a matching unit, and a magnetic field generator is provided outside the processing container to form a magnetic field on the surface of the substrate to be processed.

In general, the upper electrode is provided with a large number of gas ejection holes, and an etching gas that is converted into plasma is ejected from the gas ejection holes to the entire substrate, so that the entire surface of the substrate to be processed is etched at the same time.

Usually, an upper electrode and a lower electrode of a parallel plate type plasma etching apparatus are arranged in parallel, and a high frequency voltage for plasma generation is applied to the upper electrode or the lower electrode via a matching unit. Electrons accelerated by a high-frequency electric field between the two electrodes, secondary electrons emitted from the electrodes, or heated electrons cause ionization collisions with molecules of the processing gas, and plasma of the processing gas is generated. In addition, the magnetic field generator installed outside the plasma processing chamber adjusts the magnetic field strength distribution and the magnetic field line shape of the plasma processing chamber, thereby controlling the shape of the plasma density distribution and applying radicals and ions in the plasma to the substrate surface. Desired fine processing, for example, etching processing is performed.

Here, with the miniaturization of semiconductor integrated circuits, high-density plasma under low pressure is required for plasma processing. For example, in a capacitively coupled plasma processing apparatus, plasma processing with higher efficiency, higher density, and lower bias is required. Further, as the semiconductor chip size is increased and the substrate to be processed is increased in diameter, plasma having a larger aperture is required, and the chamber (processing vessel) is becoming larger and larger.

However, in the large-diameter plasma processing apparatus accompanying the increase in the diameter of the substrate to be processed, the electric field strength at the center of the electrode (upper electrode or lower electrode) tends to be higher than the electric field strength at the edge portion. As a result, there is a problem that the density of the generated plasma differs between the electrode center side and the electrode edge side. For this reason, there is a problem in that the plasma resistivity is low in a portion where the plasma density is high, and current is concentrated in that portion even in the opposing electrode, thereby further increasing the non-uniformity of the plasma density.

Furthermore, with the increase in the chamber size due to the increase in the diameter of the substrate to be processed, in the actual etching process, the plasma density is affected by the flow of the processing gas resulting from the temperature distribution and the like at the central and peripheral portions of the substrate to be processed. There is also the problem of being different.

The non-uniformity of the plasma density causes a difference in the etching rate of the substrate to be processed, and in particular causes a deterioration in the device yield obtained from the peripheral portion of the substrate to be processed.

Various attempts have been made to solve this problem. One is a method for solving this problem by correcting the non-uniformity of the electric field distribution. For example, in patent document 1, what comprises the main-surface center part of a high frequency electrode with a high resistance member is known. In this technology, the central portion of the main surface (plasma contact surface) of the electrode on the side connected to the high frequency power source is configured with a high resistance member, and the electric field strength on the main surface of the electrode is relative to the electrode central portion relative to the electrode outer peripheral portion. And the nonuniformity of the electric field distribution is corrected.

In addition, there is a method for solving this problem by adjusting the distribution of the plasma density according to the magnetic field strength (magnetic flux density) around the substrate to be processed and the magnetic field line shape. As is well known, a moving charge in a magnetic field receives a Lorentz force from the magnetic field and moves to wrap around the magnetic field lines. Therefore, the direction of movement is restricted by the magnetic lines of force.

Therefore, in Patent Document 2, for example, a magnetic field control device for generating a magnetic field in the processing chamber is provided outside the processing chamber, and by electron cyclotron resonance due to the interaction between the high-frequency power and the magnetic field for generating plasma, Discloses a technique for efficiently generating plasma. Further, a technique for controlling the generation distribution of plasma and the transport of plasma by controlling the magnetic field intensity and the magnetic field distribution by a magnetic field control device is disclosed.

As a magnetic field generator provided outside the processing chamber, a device that generates a magnetic field of several gauss to several hundred gauss is common. For example, a magnetic field generator composed of a permanent magnet or an electromagnet is provided in the upper part and the outer periphery of the plasma processing chamber. By controlling the magnetic flux density around the substrate to be processed by such a magnetic field generator, uniform etching or the like of the substrate to be processed is controlled.

On the other hand, Patent Document 3 is disclosed as a technique for performing magnetic field control in the plasma processing chamber. In Patent Document 3, when plasma heating is performed on a plurality of substrates installed in a plasma processing chamber, charged particles generated in the plasma processing chamber are efficiently collided with the substrate to improve heating efficiency. A magnet or a current circuit is formed between them, thereby controlling charged particles that collide with the substrate.

JP 2000-323456 A JP 2008-251866 A JP 2001-335971 A

However, in the high-frequency discharge type plasma processing apparatus as described in Patent Document 1 described above, the high-frequency electrode having the central portion of the main surface made of a high-resistance member can maintain the uniformity of the electric field distribution, The shape cannot be controlled. The uniformity of the plasma density can be realized by controlling the magnetic field strength and the magnetic field line shape simultaneously with the uniformity of the electric field distribution. However, in Patent Document 1, it cannot be realized.

In addition, when a magnetic field generator as in Patent Document 2 is provided on the outer periphery of the plasma processing chamber, it is not always easy to control the magnetic field in the plasma processing chamber. Since the distance between the magnetic field generator and the substrate to be plasma-treated is long, it is necessary to generate a large magnetic force in the magnetic field generator in order to generate a desired magnetic field in a desired part of the substrate to be processed. This is because a permanent magnet having a large magnetic force is required. In addition, when a coil is used instead of a permanent magnet, it is necessary to flow a large current through the coil. Furthermore, when a coil is used, there are a number of problems caused by flowing a large current, such as an increase in the size of equipment and devices.

Patent Document 3 forms a magnet or a current path between substrates so that as many charged particles as possible collide with the substrate itself, not the substrate support, and a magnetic field on the surface of the substrate to be processed. It does not control strength or magnetic line shape. Further, in the technique described in Patent Document 3, it is not possible to achieve uniform plasma density on the surface of the substrate to be processed, and as a result, plasma processing such as uniform etching is performed over the entire surface of the substrate to be processed. The problem cannot be solved.

The present invention has been made in view of the problems of the prior art. By controlling the surface shape of the substrate to be processed and / or the magnetic field strength and line shape of the peripheral edge thereof to have a desired distribution, the plasma processing is performed. It is an object of the present invention to provide a plasma processing substrate mounting table, a plasma processing method, and a plasma processing apparatus capable of improving uniformity and yield.

According to the first aspect of the present invention, there is provided a mounting table for mounting a substrate to be processed in a hermetically configured processing chamber and also serving as a lower electrode, and an upper electrode disposed above and facing the lower electrode. High frequency power is applied to the substrate, and a plasma is generated around the substrate to be processed by the magnetic field generated by the magnetic field generator provided outside the processing chamber and the high frequency power, and the plasma is generated on the substrate to be processed. In the plasma processing method for performing processing,
Magnetic field strength and / or magnetic field lines generated in the processing chamber are independently provided at least inside the mounting table, the annular component arranged so as to surround the substrate to be processed, or the upper electrode. For each of the plurality of concentric current paths formed, a desired current is supplied in a desired current direction to control the magnetic field strength and / or magnetic field line shape on the surface and / or the periphery of the substrate to be processed. This is a plasma processing method .

The invention according to claim 2 is the plasma processing method according to claim 1, wherein the current path is formed by a conductive wire and / or a coil.

  According to a third aspect of the present invention, there is provided a mounting table for mounting a substrate to be processed in a hermetically configured processing chamber and also serving as a lower electrode, and a circle disposed so as to surround the substrate to be processed on the mounting table. An annular component, an upper electrode disposed above and facing the lower electrode, a power supply body that supplies high-frequency power to the mounting table, an exhaust plate that exhausts processing gas, and an exterior of the processing chamber And a magnetic field generator for generating a magnetic field in the processing chamber, and performing plasma processing on the substrate to be processed by plasma generated in the processing chamber,
  A plurality of concentric current paths each independently provided inside any one of the upper electrodes, the annular component disposed so as to surround the substrate to be processed;
Current control means for flowing a desired current in a desired current direction for each of the current paths and controlling the magnetic field strength and / or magnetic field line shape on the surface and / or the periphery of the substrate to be processed;
A plasma processing apparatus comprising:

A fourth aspect of the present invention is the plasma processing apparatus according to the third aspect, wherein the current path is formed of a conductive wire and / or a coil.

According to the plasma processing apparatus of the present invention, it is possible to control the magnetic field strength and magnetic field line shape on the surface and / or the periphery of the substrate (wafer) to be processed, so that the plasma density around the wafer can have a desired distribution. As a result, the etching rate or deposition rate of the wafer can be easily and freely adjusted, and the uniformity and yield of plasma processing can be improved.

The longitudinal cross-sectional view which showed the structure of the plasma processing apparatus which is one Embodiment of this invention As one embodiment of the present invention, a plan view (top view) and a cross-sectional view of a susceptor when twelve copper wires are concentrically arranged at the lower part of the susceptor. The figure which showed other embodiment which has arrange | positioned the current path to a susceptor. The figure which showed the magnetic flux density on the susceptor surface when an electric current was sent so that the electric current direction of an adjacent electric current path might become a mutually opposite direction (pattern 1) The figure which showed the magnetic flux density on a susceptor surface when an electric current was sent so that the current direction of an adjacent current path might become the same direction (pattern 2) Graph showing the magnetic flux density on the susceptor surface of pattern 1 and pattern 2 A perspective view of the focus ring 5 when three copper wires are arranged concentrically inside the focus ring. Sectional view and plan view (top view) when seven copper wires are arranged concentrically inside the upper electrode

Hereinafter, an embodiment in which a plasma processing apparatus according to the present invention is applied to an etching apparatus will be described in detail with reference to the drawings. However, the present invention is not limited to this.

FIG. 1 shows an overall schematic configuration of a plasma processing apparatus 1 according to an embodiment of the present invention. This plasma processing apparatus is configured to include a cylindrical chamber including a processing chamber capable of hermetically sealing an interior made of, for example, aluminum or stainless steel. Here, it is configured as a capacitively coupled plasma processing apparatus of one frequency application type, but the present invention is not limited to this, and is a plasma processing apparatus of upper and lower two frequency application system or lower two frequency application system. There may be.

In the processing chamber, a susceptor 2 that supports, for example, a semiconductor wafer (hereinafter referred to as a wafer) 15 as a substrate to be processed is horizontally disposed. The susceptor 2 is made of a conductive material such as aluminum and also serves as an RF electrode. An electrostatic chuck 16 made of a dielectric material such as ceramics is provided on the upper surface of the susceptor 2 in order to hold the wafer 15 with an electrostatic adsorption force. An internal electrode 17 made of a conductive material such as copper or tungsten is embedded in the electrostatic chuck 16. The susceptor 2 is supported by an insulating cylindrical holder 3 made of ceramic or the like. The cylindrical holder 3 is supported by a cylindrical support 4 of the processing chamber, and a focus ring 5 that surrounds the upper surface of the susceptor 2 in an annular shape is disposed on the upper surface of the cylindrical holder 3. An annular cover ring 25 is disposed outside the focus ring 5.

The electrostatic chuck 16 is used as a heat exchange plate that adjusts the temperature of the wafer 15 by performing heat exchange in contact with the wafer 15. A focus ring 5 that is one of the annular parts for plasma processing is disposed outside the wafer 15. In this embodiment, the focus ring 5 is a single type, but it may be a two-divided type that is divided into an outer focus ring and an inner focus ring. The focus ring 5 is made of a material such as Si, SiC, C, or SiO 2 according to the processing content of the wafer 15.

An annular exhaust passage 6 is formed between the side wall of the processing chamber and the cylindrical support portion 4, and an annular baffle plate 7 is attached to the entrance or midway of the exhaust passage 6. An exhaust device 9 is connected to the bottom of the exhaust path 6 via an exhaust pipe 8. The exhaust device 9 has a vacuum pump such as a turbo molecular pump, and can depressurize the plasma processing space in the processing chamber to a desired degree of vacuum. A gate valve 11 for opening and closing the loading / unloading port 10 for the wafer 15 is attached outside the side wall of the processing chamber.

Connected to the center of the back surface (lower surface) of the susceptor 2 is an upper end of a cylindrical or cylindrical power supply rod 14 that extends vertically upward from an output terminal of a matching unit 13 disposed below. The high frequency power supply 12 is electrically connected to the susceptor 2 via a matching unit 13 and a power feeding rod 14. The power feed rod 14 is made of a conductor such as copper or aluminum.

The electrostatic chuck 16 is obtained by inserting an internal electrode 17 made of a sheet-like or mesh-like conductor into a film-like or plate-like dielectric, and is integrally formed or integrally fixed to the upper surface of the susceptor 2. The internal electrode 17 is electrically connected to a DC power supply and a power supply line (for example, a covered wire) disposed outside the processing chamber, and the electrostatic chuck 16 holds the wafer 15 with a Coulomb force by a DC voltage applied from the DC power supply. Can be adsorbed and retained.

An upper electrode 21 is provided on the ceiling of the processing chamber so as to face the susceptor 2 in parallel. The upper electrode 21 is formed in a disk shape having a hollow structure inside, and a large number of gas ejection holes 22 are provided on the lower surface side to form a shower head. Then, the etching gas supplied from the processing gas supply unit is introduced into the hollow portion in the upper electrode 21 through the gas introduction pipe 23, and is uniformly dispersed and supplied from the hollow portion to the processing chamber through the gas jet port 22. To do. The upper electrode 21 is made of a material such as Si or SiC, for example.

Between the electrostatic chuck 16 and the back surface of the wafer 15, a heat transfer gas such as He gas from a heat transfer gas supply unit (not shown) is supplied via a gas supply pipe 24. Promotes heat conduction between the electrostatic chuck 16, that is, the susceptor 2 and the wafer 15.

Outside the processing chamber, a magnetic field generator 27 is disposed on the side surface of the processing chamber. For example, the magnetic field generator 27 generates a magnetic field by flowing predetermined currents through two external coils. Plasma is generated by the interaction between the electromagnetic wave formed by the high-frequency power source 12 and the magnetic field generated by the magnetic field generator 27.

Here, the main feature of the plasma processing apparatus 1 is that a current path 200 is formed below the susceptor 2. The current path 200 is preferably insulated from the susceptor 2, and the material and shape of the current path 200 are not limited as long as the current flows (conductive material). For example, it may be a coil made of copper wire or a conductor.

Inside the susceptor 2, a heat medium flow path 18 for controlling the temperature of the wafer 15 is provided, and a current path 200 is provided therein. If the current path 200 is inside the susceptor 2, the arrangement location is not limited. For example, it may be provided above the susceptor 2, and in such a case, it is easy to control the magnetic field strength and magnetic line shape on the wafer 15 surface and / or the periphery, but adjustment with the arrangement of the heat medium flow path 18 is necessary. It is. On the other hand, providing the current path 200 below the susceptor 2 solves this problem, but it is necessary to increase the current value.

Further, in the present embodiment, the current path 200 is disposed at the lower portion of the susceptor 2, but may be disposed at the central portion or the upper portion. A current path 200 is provided in the susceptor 2, and a magnetic field is generated by passing a current through the susceptor 2, thereby effectively controlling the magnetic field strength and / or magnetic field line shape on the surface and / or the periphery of the wafer 15.

On the other hand, in order to more effectively control the magnetic field intensity and the shape of the magnetic field lines at the periphery of the wafer 15, a current path 200 is provided in the focus ring 5 or the cover ring 25, and a current is passed through the current path 200 in the same manner. And / or the magnetic field line shape can be controlled.

Further, the current path 200 may be formed in the upper electrode 21 so that the magnetic field strength and the shape of the magnetic lines of force generated in the processing chamber by the magnetic field generator 27 may be controlled, and the inner wall of the processing chamber and the baffle plate 7 may be controlled. The current path 200 may be formed in the (exhaust plate) to control the magnetic field strength and the shape of the lines of magnetic force in the processing chamber.

The current control device 26 connected to the current path 200 can control the value and direction of the current flowing through the current path 200. For example, if the current path 200 is constituted by a plurality of concentric electric circuits, and the current value and the current direction flowing through each electric circuit are controlled by the current control device 26, the magnetic field intensity on the surface of the wafer 15 and / or the peripheral edge It is possible to freely control the magnetic line shape.

Further, in the present embodiment, the current path 200 is configured by an electric circuit, but instead, for example, a magnetic circuit corresponding to the current path 200 may be formed by arranging permanent magnets concentrically. Good. In such a case, when the permanent magnet is disposed inside the susceptor 2, the magnetic direction of the magnet is adjusted to be arranged in a desired direction, so that the magnetic field strength on the surface and / or the periphery of the wafer 15 and / or Alternatively, the shape of the magnetic field lines can be controlled.

FIG. 2 is a plan view (top view) and a cross-sectional view of the susceptor 2 when twelve copper wires are concentrically arranged below the susceptor 2 as an embodiment of the present invention.

In the embodiment shown in FIG. 2, twelve concentric current paths 200 (200-1 to 200-12) are arranged at an interval (pitch) of 11.5 mm. The control of the magnetic field strength and / or the magnetic force line shape on the surface of the wafer 15 can be controlled by the value of current flowing in the current path 200 and the current direction. Further, the magnetic field strength and / or the magnetic field line shape on the surface of the wafer 15 and / or the peripheral edge can also be controlled by changing the pitch of each current path.

FIG. 3 is a view showing another embodiment in which a current path 200 is provided in the susceptor 2. FIG. 3A shows a case where 12 current paths 200-1 to 200-12 are configured independently. With such a current path configuration, a desired current can be passed in a desired direction for each current path. On the other hand, FIG. 3B shows a case where the current path 200 is composed of two current paths 200-1 and 200-2. By setting it as such a structure, the electric current of the opposite direction can be sent through each electric current path adjacent by two electric current paths.

4 to FIG. 6, a current control device 26 as shown in FIG. 1 is applied to a 300 mm diameter wafer susceptor 2 in which 12 current paths 200 (current paths 200-1 to 200-12) are arranged concentrically. Is a diagram showing the result of calculating the magnetic flux density on the surface of the susceptor 2 by controlling the value and direction of current flowing through the current path 200 by the current control device 26.

As shown in FIG. 4A, a current of 20 A is passed through the current paths 200-1 to 20012 of the susceptor 2 at a voltage of 200 V so that the current directions of the adjacent current paths are opposite to each other (pattern 1), The magnetic flux density on the Z axis of the susceptor 2 (on the face of the susceptor 2) was calculated.

As a result, as shown in pattern 1 of FIG. 6, the magnetic flux density of the current path 200 flowing clockwise is the maximum magnetic flux density (about 5 gauss) on the current path, while the current path 200 flowing counterclockwise is The magnetic flux density is a minimum magnetic flux density (about −5 gauss) on the current path, and a magnetic flux density distribution similar to a sine wave is approximately zero gauss near the center between the current paths 200. It turns out that you can get above.

FIG. 4B is a diagram showing the result of visual calculation of the magnetic flux density distribution at that time using a contour diagram. As shown in FIG. 4B, on the surface of the susceptor 2, It was found that a magnetic flux density distribution similar to a sine wave appears as described above.

Using the same susceptor as in the first embodiment, as shown in FIG. 5A, a current of 20 A is passed through the current paths 200-1 to 20012 so that the current directions of the adjacent current paths are the same direction (pattern 2). The magnetic flux density on the Z-axis of the susceptor 2 (on the face of the susceptor 2) was calculated. As shown in pattern 2 in FIG. 6, when a clockwise current is passed through all the current paths 200, a magnetic flux of about 5 gauss is generated on each current path, which is added toward the center, and about 30 near the center. It turned out to be Gaussian magnetic flux density. That is, it was found that a magnetic flux density distribution similar to the normal distribution can be obtained by flowing current in the same direction.

Further, FIG. 5B is a diagram showing the result of visual calculation of the magnetic flux density distribution at that time by a contour diagram, but on the surface of the susceptor 2 as shown in FIG. As described above, it was found that a magnetic flux density distribution similar to the normal distribution appears.

FIG. 7 is a perspective view when three copper wires are concentrically arranged inside the focus ring 5 as another embodiment of the present invention. Inside the focus ring 5, a current path 210 (210-1 to 210-3) is formed that is insulated from the surroundings and is concentrically provided at a predetermined interval and through which a desired current flows in a desired current direction. The magnetic field strength and / or magnetic field line shape of the periphery of the substrate to be processed can be more effectively controlled by the value of the current flowing through the current path and its direction.

It is preferable that the current path 210 disposed in the focus ring 5 is formed of a conductive wire or a coil. Instead of the current path 210, a magnetic circuit in which magnets are concentrically arranged at a predetermined interval may be formed inside the focus ring 5.

FIG. 8 shows, as another embodiment of the present invention, a cross-sectional view (FIG. 8A) and a plan view (FIG. 8B) when seven copper wires are concentrically arranged inside the upper electrode 21. FIG. ). Inside the upper electrode 21, there are formed current paths 220 (220-1 to 220-7) that are insulated from the surroundings and are provided concentrically at a predetermined interval and through which a desired current flows in a desired current direction. The magnetic field strength and / or magnetic field line shape in the processing chamber can be more effectively controlled by the value of the current flowing through the current path and its direction.

It is preferable that the current path 220 disposed inside the upper electrode 21 is formed of a conductive wire or a coil. Further, instead of the current path 220, a magnetic circuit in which magnets are concentrically arranged at predetermined intervals inside the upper electrode 21 may be formed.

From the above knowledge, it is possible to efficiently control the magnetic flux density on the wafer surface and / or the periphery by forming a current path in the susceptor and changing the value and direction of the current flowing therethrough and the pitch of the current path. Became clear. Further, it has been clarified that a desired magnetic field strength and magnetic field line shape can be dynamically controlled by dynamically changing a current value flowing through the current path. As a result, it has been clarified that the etching rate and deposition rate can be adjusted to desired portions with desired values.

The present invention is not limited to a plasma etching apparatus, but can be applied to other plasma processing apparatuses such as plasma CVD, plasma oxidation, plasma nitridation, and sputtering. Further, the substrate to be processed in the present invention is not limited to a semiconductor wafer, and various substrates for flat panel displays, photomasks, CD substrates, printed substrates, and the like are also possible.

1
Plasma processing equipment 2
Susceptor (RF electrode)
3
Cylindrical holding part 4
Cylindrical support 5
Focus ring 6
Exhaust path 7
Baffle plate 8
Exhaust pipe 9
Exhaust device 10
Wafer loading / unloading port 11
Gate valve 12
High frequency power supply 13
Matching device 14
Feed rod 15
Wafer (substrate)
16
Electrostatic chuck 17
Internal electrode 18
Heat medium flow path 20
Piping 21
Upper electrode 22
Gas outlet 23
Gas introduction pipe 24
Heat medium supply pipe (gas supply pipe)
25
Covering 26
Current control device 27
Magnetic field generator 200, 210, 220 Current path

Claims (4)

Applying high-frequency power to a mounting table that also serves as a lower electrode and a lower electrode placed on a substrate to be processed in a hermetically configured processing chamber; In the plasma processing method of generating plasma around the substrate to be processed by the magnetic field generated by the magnetic field generator provided outside the processing chamber and the high frequency power, and performing plasma processing on the substrate to be processed,
Magnetic field strength and / or magnetic field lines generated in the processing chamber are independently provided at least inside the mounting table, the annular component arranged so as to surround the substrate to be processed, or the upper electrode. For each of the plurality of concentric current paths formed, a desired current is supplied in a desired current direction to control the magnetic field strength and / or magnetic field line shape on the surface and / or the periphery of the substrate to be processed. Plasma processing method . The plasma processing method according to claim 1, wherein the current path is formed by a conductive wire and / or a coil . Place a substrate to be processed in a hermetically configured processing chamber and also serve as a lower electrode, an annular component arranged to surround the substrate to be processed on the mounting table, and opposed to the lower electrode The upper electrode disposed above, the power supply body for supplying high-frequency power to the mounting table, the exhaust plate for exhausting the processing gas, and the magnetic field generated in the processing chamber provided outside the processing chamber In a plasma processing apparatus comprising a magnetic field generator, and performing plasma processing on the substrate to be processed by plasma generated in the processing chamber,
A plurality of concentric current paths each independently provided inside any one of the upper electrodes, the annular component disposed so as to surround the substrate to be processed;
Current control means for flowing a desired current in a desired current direction for each of the current paths and controlling the magnetic field strength and / or magnetic field line shape on the surface and / or the periphery of the substrate to be processed;
A plasma processing apparatus comprising: The plasma processing apparatus according to claim 3, wherein the current path is formed of a conductive wire and / or a coil .