JP5621819B2 - Curable composition, cured product, and optical semiconductor device - Google Patents
Curable composition, cured product, and optical semiconductor device Download PDFInfo
- Publication number
- JP5621819B2 JP5621819B2 JP2012184135A JP2012184135A JP5621819B2 JP 5621819 B2 JP5621819 B2 JP 5621819B2 JP 2012184135 A JP2012184135 A JP 2012184135A JP 2012184135 A JP2012184135 A JP 2012184135A JP 5621819 B2 JP5621819 B2 JP 5621819B2
- Authority
- JP
- Japan
- Prior art keywords
- polysiloxane
- group
- curable composition
- cured product
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 74
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 230000003287 optical effect Effects 0.000 title description 13
- -1 polysiloxane Polymers 0.000 claims description 136
- 229920001296 polysiloxane Polymers 0.000 claims description 106
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 30
- 125000003342 alkenyl group Chemical group 0.000 claims description 21
- 125000003118 aryl group Chemical group 0.000 claims description 20
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 39
- 230000015572 biosynthetic process Effects 0.000 description 23
- 238000003786 synthesis reaction Methods 0.000 description 23
- 150000002430 hydrocarbons Chemical class 0.000 description 22
- 229930195734 saturated hydrocarbon Natural products 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 238000006459 hydrosilylation reaction Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 10
- 238000010992 reflux Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- 239000007809 chemical reaction catalyst Substances 0.000 description 5
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 4
- 125000006038 hexenyl group Chemical group 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 3
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- SORVFRRXWOKHGG-UHFFFAOYSA-N bis(2-methylprop-1-enylsilyloxy)-diphenylsilane Chemical compound C1(=CC=CC=C1)[Si](O[SiH2]C=C(C)C)(O[SiH2]C=C(C)C)C1=CC=CC=C1 SORVFRRXWOKHGG-UHFFFAOYSA-N 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 125000005023 xylyl group Chemical group 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- OMVJZHLKVHCHEW-UHFFFAOYSA-N bis[[hydroxy(dimethyl)silyl]oxy]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O[Si](C)(C)O)(O[Si](C)(O)C)C1=CC=CC=C1 OMVJZHLKVHCHEW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- XIVQMBJJCVVPCF-UHFFFAOYSA-N methylcyclohexane;toluene Chemical compound CC1CCCCC1.CC1=CC=CC=C1 XIVQMBJJCVVPCF-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002559 palpation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VTYCDJPJGNRAHU-UHFFFAOYSA-N tris(2-methylprop-1-enylsilyloxy)-phenylsilane Chemical compound C1(=CC=CC=C1)[Si](O[SiH2]C=C(C)C)(O[SiH2]C=C(C)C)O[SiH2]C=C(C)C VTYCDJPJGNRAHU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Silicon Polymers (AREA)
Description
本発明は、硬化性組成物、硬化物および光半導体装置に関する。 The present invention relates to a curable composition, a cured product, and an optical semiconductor device.
付加硬化型シリコーンゴム組成物は、耐候性、耐熱性、硬度、伸び等のゴム的性質に優れた硬化物を形成することからLEDのパッケージ封止剤等の種々の用途に使用されている。しかし、その硬化物の表面にタックがあるため埃が付着し、また、製品の選別に使うパーツフィダーで、パッケージ同士が粘着する等の問題がある。 Addition-curable silicone rubber compositions are used in various applications such as LED package sealants because they form cured products having excellent rubber properties such as weather resistance, heat resistance, hardness, and elongation. However, there is a problem that dust adheres because of the tack on the surface of the cured product, and the parts feeder that is used for selecting products sticks to each other.
タックをなくすためには、硬質シリコーン樹脂を用いればよいが、その硬化物は耐衝撃性が低く、特に熱衝撃によりクラックが発生し易いという問題がある。
そこで、両者の特性を利用して、付加硬化型のシリコーンゴム組成物にレジン状のオルガノポリシロキサンを配合することにより硬化物の強度を向上させる方法、および付加硬化型のシリコーンゴム組成物の硬化物の上にレジンを被覆する方法などが提案されている(特許文献1、2)。
In order to eliminate the tack, a hard silicone resin may be used. However, the cured product has a low impact resistance, and there is a problem that a crack is easily generated particularly by a thermal shock.
Therefore, by utilizing both characteristics, a method for improving the strength of the cured product by adding a resinous organopolysiloxane to the addition-curable silicone rubber composition, and curing of the addition-curable silicone rubber composition A method of coating a resin on an object has been proposed (Patent Documents 1 and 2).
本発明は、タックが低減された硬化物を得ることができる硬化性組成物、および該硬化性組成物から得られる硬化物、該硬化物を有する光半導体装置を提供することを目的とする。 An object of the present invention is to provide a curable composition capable of obtaining a cured product with reduced tack, a cured product obtained from the curable composition, and an optical semiconductor device having the cured product.
前記目的を達成する本発明は以下のとおりである。
[1]アルケニル基を有するポリシロキサン(A)、飽和炭化水素化合物(B)および1分子当たり少なくとも2個のケイ素原子結合水素原子を有するポリシロキサン(D)を含有する硬化性組成物。
[2]飽和炭化水素化合物(B)の沸点が、1気圧下、50℃〜150℃である前記[1]に記載の硬化性組成物。
[3]飽和炭化水素化合物(B)の含有割合が、0.1〜5000ppmである前記[1]または[2]に記載の硬化性組成物。
[4]飽和炭化水素化合物(B)が、飽和脂環式炭化水素化合物である前記[1]〜[3]のいずれかに記載の硬化性組成物。
The present invention for achieving the above object is as follows.
[1] A curable composition containing a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B), and a polysiloxane (D) having at least two silicon-bonded hydrogen atoms per molecule.
[2] The curable composition according to the above [1], wherein the saturated hydrocarbon compound (B) has a boiling point of 50 ° C to 150 ° C under 1 atm.
[3] The curable composition according to [1] or [2], wherein the content ratio of the saturated hydrocarbon compound (B) is 0.1 to 5000 ppm.
[4] The curable composition according to any one of [1] to [3], wherein the saturated hydrocarbon compound (B) is a saturated alicyclic hydrocarbon compound.
[5]アルケニル基を有するポリシロキサン(A)が、アリール基を有するポリシロキサンである前記[1]〜[4]のいずれかに記載の硬化性組成物。
[6]アルケニル基を有するポリシロキサン(A)、飽和炭化水素化合物(B)および1分子当たり少なくとも2個のケイ素原子結合水素原子を有するポリシロキサン(D)を含有する硬化性組成物の製造方法であって、前記ポリシロキサン(A)およびポリシロキサン(D)の少なくともいずれか一方を、前記飽和炭化水素化合物(B)を合成溶媒として用いて合成し、得られたポリシロキサン含有合成溶液の濃縮物を用いることを特徴とする硬化性組成物の製造方法。
[7]前記[1]〜[5]のいずれかに記載の硬化性組成物を硬化することにより得られる硬化物。
[8]半導体発光素子と、該半導体発光素子を被覆する、前記[7]に記載の硬化物とを有する光半導体装置。
[5] The curable composition according to any one of [1] to [4], wherein the polysiloxane (A) having an alkenyl group is a polysiloxane having an aryl group.
[6] Method for producing curable composition containing polysiloxane (A) having alkenyl group, saturated hydrocarbon compound (B) and polysiloxane (D) having at least two silicon-bonded hydrogen atoms per molecule Wherein at least one of the polysiloxane (A) and the polysiloxane (D) is synthesized using the saturated hydrocarbon compound (B) as a synthesis solvent, and the resulting polysiloxane-containing synthesis solution is concentrated. The manufacturing method of the curable composition characterized by using a thing.
[7] A cured product obtained by curing the curable composition according to any one of [1] to [5].
[8] An optical semiconductor device having a semiconductor light-emitting element and the cured product according to [7], which covers the semiconductor light-emitting element.
本発明の硬化性組成物は、タックが十分に低減された硬化物を形成することができる。本発明の硬化性組成物から形成された硬化物を封止材等として有する光半導体装置は、硬化物の表面に埃等が付着するおそれが小さく、また、製品の選別に使うパーツフィダーで、パッケージ同士が粘着する等の問題が生じるおそれが小さい。 The curable composition of the present invention can form a cured product with sufficiently reduced tack. An optical semiconductor device having a cured product formed from the curable composition of the present invention as a sealing material or the like is less likely to have dust or the like attached to the surface of the cured product, and is a parts feeder used for product selection. There is little risk of problems such as package sticking.
<硬化性組成物>
本発明の硬化性組成物は、アルケニル基を有するポリシロキサン(A)、飽和炭化水素化合物(B)および1分子当たり少なくとも2個のケイ素原子結合水素原子を有するポリシロキサン(D)を含有する。本発明の硬化性組成物は、その他、ヒドロシリル化反応用触媒(C)や添加剤を含有することができる。
なお、本発明において「ポリシロキサン」とは、シロキサン単位 (Si−O)が2個以上結合した分子骨格を有する化合物を意味する。
<Curable composition>
The curable composition of the present invention contains a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B), and a polysiloxane (D) having at least two silicon-bonded hydrogen atoms per molecule. In addition, the curable composition of the present invention can contain a hydrosilylation catalyst (C) and an additive.
In the present invention, “polysiloxane” means a compound having a molecular skeleton in which two or more siloxane units (Si—O) are bonded.
ポリシロキサン(A)
ポリシロキサン(A)は、アルケニル基を有するポリシロキサンである。ポリシロキサン(A)は本組成物の主成分であり、ポリシロキサン(D)とのヒドロシリル化反応により硬化し、硬化物の主体となる。
Polysiloxane (A)
The polysiloxane (A) is a polysiloxane having an alkenyl group. The polysiloxane (A) is a main component of the present composition, and is cured by a hydrosilylation reaction with the polysiloxane (D) to become a main body of the cured product.
ポリシロキサン(A)は、ポリシロキサン(D)とのヒドロシリル化反応により硬化しうる限り特に制限はない。
ポリシロキサン(A)は、ポリシロキサン(D)と同一の化合物であってもよい。すなわち、ポリシロキサン(A)およびポリシロキサン(D)は、同一分子内にアルケニル基と少なくとも2個のケイ素原子結合水素原子とを有するポリシロキサンであってもよい。このようなポリシロキサンは、本組成物の主剤であると同時に架橋剤として機能する。
The polysiloxane (A) is not particularly limited as long as it can be cured by a hydrosilylation reaction with the polysiloxane (D).
The polysiloxane (A) may be the same compound as the polysiloxane (D). That is, polysiloxane (A) and polysiloxane (D) may be polysiloxane having an alkenyl group and at least two silicon-bonded hydrogen atoms in the same molecule. Such a polysiloxane functions as a crosslinking agent as well as the main component of the present composition.
ポリシロキサン(A)が有するアルケニル基としては、たとえば、ビニル基、アリル基、プロペニル基、イソプロペニル基、ブテニル基、イソブテニル基、ペンテニル基、ヘプテニル基、ヘキセニル基およびシクロヘキセニル基等が挙げられる。これらの中でも、ビニル基、アリル基およびヘキセニル基が好ましい。 Examples of the alkenyl group that the polysiloxane (A) has include a vinyl group, an allyl group, a propenyl group, an isopropenyl group, a butenyl group, an isobutenyl group, a pentenyl group, a heptenyl group, a hexenyl group, and a cyclohexenyl group. Among these, a vinyl group, an allyl group, and a hexenyl group are preferable.
ポリシロキサン(A)におけるアルケニル基の含有量は、ポリシロキサン(A)中に含まれる全Si原子の数を100モル%とするとき、3〜50モル%であることが好ましく、より好ましくは5〜40モル%であり、さらに好ましくは10〜30モル%である。アルケニル基の含有量が前記範囲内であると、ポリシロキサン(A)とポリシロキサン(D)とのヒドロシリル化反応が好適に進み、強度の強い硬化物を得られる。 The alkenyl group content in the polysiloxane (A) is preferably 3 to 50 mol%, more preferably 5 when the number of all Si atoms contained in the polysiloxane (A) is 100 mol%. It is -40 mol%, More preferably, it is 10-30 mol%. When the content of the alkenyl group is within the above range, the hydrosilylation reaction between the polysiloxane (A) and the polysiloxane (D) proceeds suitably, and a cured product having high strength can be obtained.
ポリシロキサン(A)は、アリール基を有するポリシロキサンであることが好ましい。
ポリシロキサン(A)がアリール基を有すると、LED封止材として用いた時に高い輝度が得られるという特性が発現する。ポリシロキサン(A)中に含まれる全Si原子の数を100モル%とするとき、ポリシロキサン(A)に含まれるアリール基の含有量は30〜120モル%であることが好ましく、より好ましくは50〜110モル%、さらに好ましくは70〜100モル%である。アリール基の含有量が30〜120モル%の範囲内にあるとき、本組成物から輝度が高く、屈折率の高い硬化膜が得られる。前記アリール基としては、フェニル基、トリル基、キシリル基、ナフチル基等が挙げられる。
The polysiloxane (A) is preferably a polysiloxane having an aryl group.
When the polysiloxane (A) has an aryl group, a characteristic that high luminance is obtained when used as an LED sealing material is exhibited. When the number of all Si atoms contained in the polysiloxane (A) is 100 mol%, the content of aryl groups contained in the polysiloxane (A) is preferably 30 to 120 mol%, more preferably It is 50-110 mol%, More preferably, it is 70-100 mol%. When the aryl group content is in the range of 30 to 120 mol%, a cured film having high luminance and high refractive index can be obtained from the present composition. Examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group.
ポリシロキサン(A)は、下記式(1)で示されるポリシロキサンであることが好ましい。ポリシロキサン(A)が、このようにポリシロキサン鎖を構成する同一のケイ素原子に2個のアリール基が結合しているシロキサン単位を有すると、本願の硬化性組成物から得られる硬化物の耐湿性が高くなる。 The polysiloxane (A) is preferably a polysiloxane represented by the following formula (1). When the polysiloxane (A) has a siloxane unit in which two aryl groups are bonded to the same silicon atom constituting the polysiloxane chain as described above, the moisture resistance of the cured product obtained from the curable composition of the present application is as follows. Increases nature.
式(1)中、R1、R2およびR3は、それぞれ独立に、アルキル基、アルケニル基、アリール基またはグリシドキシアルキル基を示す。すなわち、符号aが付された1つのシロキサン単位(構造単位)については、3個存在するR1は、それぞれ独立に、アルキル基であっても、アルケニル基であっても、アリール基であっても、グリシドキシアルキルであってもよい。たとえば3個のR1のうち2個以上のR1がアルキル基である場合、そのアルキル基は同じアルキル基であっても、異なるアルキル基であってもよい。符号aが2以上の整数である場合、符号aが付された各シロキサン単位は同じであっても異なっていてもよい。R2およびR3についてもR1と同様である。 In formula (1), R 1 , R 2 and R 3 each independently represents an alkyl group, an alkenyl group, an aryl group or a glycidoxyalkyl group. That is, for one siloxane unit (structural unit) to which the symbol a is attached, three R 1 s independently represent an alkyl group, an alkenyl group, an aryl group, Or glycidoxyalkyl. If for example, three more than one R 1 is an alkyl group of R 1, the alkyl group may be the same alkyl group or may be different alkyl groups. When the code | symbol a is an integer greater than or equal to 2, each siloxane unit to which the code | symbol a was attached | subjected may be the same or different. R 2 and R 3 are the same as R 1 .
ただし、符号aが付されたシロキサン単位に存在するR1、符号cが付されたシロキサン単位に存在するR2および符号dが付されたシロキサン単位に存在するR3のうち少なくとも2つはアルケニル基であり、上記式(1)で示されるポリシロキサン(A)1分子の中に少なくとも2つのアルケニル基が存在する。たとえば、符号aが付された1つのシロキサン単位に存在する3個のR1のうちの1個がアルケニル基であり、そのシロキサン単位が2個以上存在してもよい。符号aが付された1つのシロキサン単位に存在する3個のR1のうちの2個以上がアルケニル基であり、そのシロキサン単位が1個以上存在してもよい。符号aが付された1つのシロキサン単位に存在する3個のR1のうちの1個がアルケニル基であり、そのシロキサン単位が1個存在し、符号cが付された1つのシロキサン単位に存在する2個のR2のうちの1個がアルケニル基であり、そのシロキサン単位が1個以上存在してもよい。 Provided that at least two alkenyl of R 1, R 3 present in the siloxane units R 2 and sign d is attached is present in the siloxane units code c is attached to exist in the siloxane units sign a is attached And at least two alkenyl groups are present in one molecule of the polysiloxane (A) represented by the above formula (1). For example, one of the three R 1 groups present in one siloxane unit with the symbol a may be an alkenyl group, and two or more siloxane units may be present. Two or more of the three R 1 present in one siloxane unit to which the symbol a is attached are alkenyl groups, and one or more siloxane units may be present. One of the three R 1 groups present in one siloxane unit with the symbol a is an alkenyl group, one siloxane unit is present, and one siloxane unit with the symbol c is present. One of the two R 2 groups may be an alkenyl group, and one or more siloxane units may be present.
また、符号cが付されたシロキサン単位については、同一のケイ素原子に結合する2つのR2のうち、一方のR2がアリール基である場合には、他方のR2はアリール基ではない。 In addition, regarding the siloxane unit with the symbol c, when one R 2 is an aryl group among the two R 2 bonded to the same silicon atom, the other R 2 is not an aryl group.
前記アルキル基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、シクロプロピル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基、ボルニル基、ノルボルニル基、アダマンチル基等を挙げることができる。これらの中でも、メチル基が好ましい。 Examples of the alkyl group include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, bornyl group, norbornyl group. And an adamantyl group. Among these, a methyl group is preferable.
前記アルケニル基としては、ビニル基、アリル基、プロペニル基、イソプロペニル基、ブテニル基、イソブテニル基、ペンテニル基、ヘプテニル基、ヘキセニル基およびシクロヘキセニル基等を挙げることができる。これらの中でも、ビニル基、アリル基およびヘキセニル基が好ましい。 Examples of the alkenyl group include vinyl group, allyl group, propenyl group, isopropenyl group, butenyl group, isobutenyl group, pentenyl group, heptenyl group, hexenyl group, and cyclohexenyl group. Among these, a vinyl group, an allyl group, and a hexenyl group are preferable.
前記アリール基としては、フェニル基、トリル基、キシリル基、ナフチル基等を挙げることができる。これらの中でも、フェニル基が好ましい。
前記グリシドキシアルキル基としては、グリシドキシプロピル等を挙げることができる。
Examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group. Among these, a phenyl group is preferable.
Examples of the glycidoxyalkyl group include glycidoxypropyl.
式(1)中、RAr1はアリール基を示す。RAr1が表わすアリール基は、前記R1、R2およびR3が表わすアリール基と同様である。
式(1)中、Xは水素原子または炭素数1〜3のアルキル基を示す。
In formula (1), R Ar1 represents an aryl group. The aryl group represented by R Ar1 is the same as the aryl group represented by R 1 , R 2 and R 3 .
In formula (1), X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.
式(1)中、a、c、eおよびfはそれぞれ独立に0以上の整数を示す。bおよびdはそれぞれ独立に1以上の整数を示す。
ポリシロキサン(A)が、符号bが付されたシロキサン単位、すなわちポリシロキサン鎖を構成する同一のケイ素原子に2個のアリール基が結合しているシロキサン単位を有することにより、本硬化性組成物から得られる硬化物の耐湿性が向上する。
In formula (1), a, c, e and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more.
The present curable composition comprises the polysiloxane (A) having a siloxane unit having a symbol b, that is, a siloxane unit in which two aryl groups are bonded to the same silicon atom constituting the polysiloxane chain. The moisture resistance of the cured product obtained from is improved.
a、b、c、d、eおよびfの合計を100%とした場合、aの割合は、好ましくは0〜70%、より好ましくは0〜40%である。bの割合は、好ましくは1〜70%、より好ましくは1〜40%である。cの割合は、好ましくは0〜70%、より好ましくは0〜40%である。dの割合は、好ましくは1〜80%、より好ましくは30〜70%である。eの割合は、好ましくは0〜50%、より好ましくは0〜20%である。fの割合は、好ましくは0〜40%、より好ましくは0〜10%である。 When the total of a, b, c, d, e and f is 100%, the ratio of a is preferably 0 to 70%, more preferably 0 to 40%. The proportion of b is preferably 1 to 70%, more preferably 1 to 40%. The proportion of c is preferably 0 to 70%, more preferably 0 to 40%. The proportion of d is preferably 1 to 80%, more preferably 30 to 70%. The proportion of e is preferably 0 to 50%, more preferably 0 to 20%. The proportion of f is preferably 0 to 40%, more preferably 0 to 10%.
ポリシロキサン(A)は、ゲルパーミエーションクロマトグラフィーにより測定したポリスチレン換算の重量平均分子量が100〜50000の範囲にあることが好ましく、500〜5000の範囲にあることがより好ましい。ポリシロキサン(A)の重量平均分子量が前記範囲内にあると、本組成物を用いて封止材を製造する際に取扱いやすく、また本組成物から得られる硬化物は光半導体封止材として十分な強度を有する。 Polysiloxane (A) preferably has a polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography in the range of 100 to 50000, and more preferably in the range of 500 to 5000. When the weight average molecular weight of the polysiloxane (A) is within the above range, it is easy to handle when producing a sealing material using the composition, and the cured product obtained from the composition is used as an optical semiconductor sealing material. It has sufficient strength.
ポリシロキサン(A)の製造方法としては、特開平6−9659号公報、特開2003−183582号公報、特開2007−008996号公報、特開2007−106798号公報、特開2007−169427号公報および特開2010−059359号公報等に記載された公知の方法、たとえば、適当な合成溶媒中で各単位源となるクロロシランやアルコキシシランを共加水分解する方法や、共加水分解物をアルカリ金属触媒などにより平衡化反応する方法などが挙げられる。合成溶媒として飽和炭化水素化合物(B)を用いてポリシロキサン(A)を合成すると、得られたポリシロキサン(A)含有合成溶液には飽和炭化水素化合物(B)が含有されているので、その濃縮物を用いて硬化性組成物を調製すれば、飽和炭化水素化合物(B)を添加する操作を省略することができる。 As a method for producing the polysiloxane (A), JP-A-6-9659, JP-A-2003-183582, JP-A-2007-008996, JP-A-2007-106798, JP-A-2007-169427 are disclosed. And a known method described in JP 2010-059359 A, for example, a method of co-hydrolyzing chlorosilane or alkoxysilane as each unit source in an appropriate synthesis solvent, or a co-hydrolyzate as an alkali metal catalyst. For example, a method of equilibrating reaction may be mentioned. When the polysiloxane (A) is synthesized using the saturated hydrocarbon compound (B) as the synthesis solvent, the resulting polysiloxane (A) -containing synthesis solution contains the saturated hydrocarbon compound (B). If a curable composition is prepared using a concentrate, operation which adds a saturated hydrocarbon compound (B) can be skipped.
飽和炭化水素化合物(B)
本発明の硬化性組成物は、ポリシロキサン(A)およびポリシロキサン(D)とともに飽和炭化水素化合物(B)を含有することにより、タックが十分に低減された硬化物を形成することができる。
Saturated hydrocarbon compound (B)
The curable composition of the present invention can form a cured product with sufficiently reduced tack by containing the saturated hydrocarbon compound (B) together with the polysiloxane (A) and the polysiloxane (D).
飽和炭化水素化合物(B)としては、n−ペンタン(36℃)、n−ヘキサン(69℃)、n−ヘプタン(98℃)、n−オクタン(126℃)、等の飽和脂肪族炭化水素化合物;メチルシクロヘキサン(101℃)、シクロヘキサン(81℃)、エチルシクロヘキサン(130℃)、ジメチルシクロヘキサン(124℃)、シクロヘプタン(118℃)、シクロオクタン(149℃)、等の飽和脂環式炭化水素化合物;を挙げることができる(括弧内は1気圧下での沸点を示す)。これらの中でも飽和脂環式炭化水素化合物が、硬化物のタックをより効果的に低減することができることから好ましい。 Saturated hydrocarbon compounds (B) include saturated aliphatic hydrocarbon compounds such as n-pentane (36 ° C.), n-hexane (69 ° C.), n-heptane (98 ° C.), n-octane (126 ° C.), etc. Saturated alicyclic hydrocarbons such as methylcyclohexane (101 ° C), cyclohexane (81 ° C), ethylcyclohexane (130 ° C), dimethylcyclohexane (124 ° C), cycloheptane (118 ° C), cyclooctane (149 ° C), etc. Compound (in the parentheses indicate the boiling point at 1 atm). Among these, a saturated alicyclic hydrocarbon compound is preferable because the tack of the cured product can be more effectively reduced.
飽和炭化水素化合物(B)の沸点は、1気圧下で50℃〜150℃であることが好ましく、より好ましくは70〜140℃、さらに好ましくは80〜130℃である。飽和炭化水素化合物(B)の沸点が1気圧下で50℃〜150℃であると、硬化物のタックをより低減できる。 The boiling point of the saturated hydrocarbon compound (B) is preferably 50 ° C. to 150 ° C. at 1 atmosphere, more preferably 70 to 140 ° C., and further preferably 80 to 130 ° C. When the boiling point of the saturated hydrocarbon compound (B) is 50 ° C. to 150 ° C. under 1 atm, tack of the cured product can be further reduced.
本発明の硬化性組成物において、飽和炭化水素化合物(B)の含有割合は、0.1〜5000ppmであることが好ましく、より好ましくは0.1〜1000ppm、さらに好ましくは0.1〜100ppmである。飽和炭化水素化合物(B)の含有割合が前記範囲内であると、硬化物のタックをより効果的に低減することができる。 In the curable composition of the present invention, the content of the saturated hydrocarbon compound (B) is preferably 0.1 to 5000 ppm, more preferably 0.1 to 1000 ppm, and still more preferably 0.1 to 100 ppm. is there. When the content ratio of the saturated hydrocarbon compound (B) is within the above range, the tack of the cured product can be more effectively reduced.
ポリシロキサン(D)
ポリシロキサン(D)は、1分子当たり少なくとも2個のケイ素原子結合水素原子を有するポリシロキサンである。すなわちポリシロキサン(D)は、1分子当たり少なくとも2個のSi−H基(ヒドロシリル基)を有する。ポリシロキサン(D)はポリシロキサン(A)に対する架橋剤であり、ポリシロキサン(A)とのヒドロシリル化反応により硬化物を形成する。
Polysiloxane (D)
The polysiloxane (D) is a polysiloxane having at least two silicon-bonded hydrogen atoms per molecule. That is, the polysiloxane (D) has at least two Si—H groups (hydrosilyl groups) per molecule. Polysiloxane (D) is a crosslinking agent for polysiloxane (A), and forms a cured product by a hydrosilylation reaction with polysiloxane (A).
ポリシロキサン(D)としては、従来のヒドロシリル系ポリシロキサン組成物において架橋剤として使用されている、1分子当たり少なくとも2個のケイ素原子結合水素原子を有するポリシロキサンであればよい。 The polysiloxane (D) may be any polysiloxane having at least two silicon-bonded hydrogen atoms per molecule, which is used as a crosslinking agent in conventional hydrosilyl polysiloxane compositions.
前述のとおり、ポリシロキサン(D)はポリシロキサン(A)と同一の化合物であってもよい。
ポリシロキサン(D)の具体例としては、特許文献1〜2に記載されたオルガノハイドロジェンポリシロキサンなどを挙げることができる。
As described above, the polysiloxane (D) may be the same compound as the polysiloxane (A).
Specific examples of the polysiloxane (D) include organohydrogenpolysiloxanes described in
ポリシロキサン(D)は、たとえば、フェニルトリメトキシシラン、ジフェニルジメトキシシランなどのアルコキシシランと、1,1,3,3−テトラメチルジシロキサンなどのハイドロジェンシロキサンとを公知の方法により適当な合成溶媒中で反応させることにより得ることができる。合成溶媒として飽和炭化水素化合物(B)を用いてポリシロキサン(D)を合成すると、得られたポリシロキサン(D)含有合成溶液には飽和炭化水素化合物(B)が含有されているので、その濃縮物を用いて硬化性組成物を調製すれば、飽和炭化水素化合物(B)を添加する操作を省略することができる。 Polysiloxane (D) can be prepared by, for example, combining an alkoxysilane such as phenyltrimethoxysilane or diphenyldimethoxysilane with a hydrogensiloxane such as 1,1,3,3-tetramethyldisiloxane by a known method. It can be obtained by reacting in. When the polysiloxane (D) is synthesized using the saturated hydrocarbon compound (B) as a synthesis solvent, the resulting polysiloxane (D) -containing synthesis solution contains the saturated hydrocarbon compound (B). If a curable composition is prepared using a concentrate, operation which adds a saturated hydrocarbon compound (B) can be skipped.
本発明の硬化性組成物におけるポリシロキサン(D)の含有量としては、ポリシロキサン(A)中のアルケニル基量に対するポリシロキサン(D)中のケイ素原子結合水素原子量のモル比が0.1〜5となる量であることが好ましく、より好ましくは0.5〜2、さらに好ましくは0.7〜1.4となる量である。ポリシロキサン(D)の含有量が前記範囲内であると、組成物の硬化は十分に進行し、また、得られる硬化物は十分な耐熱性を有する。 As content of polysiloxane (D) in the curable composition of this invention, the molar ratio of the silicon atom bond hydrogen atom amount in polysiloxane (D) with respect to the amount of alkenyl groups in polysiloxane (A) is 0.1-. 5 is preferable, more preferably 0.5 to 2, and still more preferably 0.7 to 1.4. When the content of the polysiloxane (D) is within the above range, the curing of the composition proceeds sufficiently, and the obtained cured product has sufficient heat resistance.
ヒドロシリル化反応用触媒(C)
ヒドロシリル化反応用触媒(C)は、ヒドロシリル化反応を促進するための触媒である。
ヒドロシリル化反応用触媒(C)としては、従来のヒドロシリル系ポリシロキサン組成物においてヒドロシリル化反応用触媒として使用されている触媒であれば特に制限されることなく使用することができる。
Catalyst for hydrosilylation reaction (C)
The hydrosilylation catalyst (C) is a catalyst for promoting the hydrosilylation reaction.
The hydrosilylation reaction catalyst (C) can be used without any particular limitation as long as it is a catalyst used as a hydrosilylation reaction catalyst in a conventional hydrosilyl polysiloxane composition.
ヒドロシリル化反応用触媒(C)の具体例としては、白金系触媒、ロジウム系触媒、パラジウム系触媒を挙げることができる。これらの中で、本組成物の硬化促進の観点から白金系触媒が好ましい。白金系触媒としては、白金−アルケニルシロキサン錯体等が挙げられる。アルケニルシロキサンとしては、たとえば、1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン、1,3,5,7−テトラメチル−1,3,5,7−テトラビニルシクロテトラシロキサン等が挙げられる。特に、錯体の安定性の観点から、1,3−ジビニル−1,1,3,3−テトラメチルジシロキサンが好ましい。 Specific examples of the hydrosilylation catalyst (C) include a platinum-based catalyst, a rhodium-based catalyst, and a palladium-based catalyst. Among these, a platinum-based catalyst is preferable from the viewpoint of promoting the curing of the present composition. Examples of platinum-based catalysts include platinum-alkenylsiloxane complexes. Examples of the alkenylsiloxane include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane. Etc. In particular, from the viewpoint of stability of the complex, 1,3-divinyl-1,1,3,3-tetra- disiloxane is preferable.
本発明の硬化性組成物におけるヒドロシリル化反応用触媒(C)は、ポリシロキサン(A)とポリシロキサン(D)とのヒドロシリル化反応が現実的に進行する量、たとえば硬化性組成物中0.01ppm〜10000ppmを用いる。 The hydrosilylation reaction catalyst (C) in the curable composition of the present invention is an amount in which the hydrosilylation reaction of the polysiloxane (A) and the polysiloxane (D) actually proceeds, for example, 0.00% in the curable composition. 01 ppm to 10000 ppm is used.
添加剤
本発明の硬化性組成物は、本発明の目的が達成されるかぎり、必要に応じて、たとえば、フュームドシリカ、石英粉末等の微粒子状シリカ、酸化チタン、酸化亜鉛等の無機充填剤、エチニルシクロヘキサノール、シクロ−テトラメチルテトラビニルテトラシロキサン等の反応遅延剤、ジフェニルビス(ジメチルビニルシロキシ)シラン、フェニルトリス(ジメチルビニルシロキシ)シラン、ジフェニルビス(ジメチルヒドロキシシロキシ)シラン等の希釈剤、顔料、難燃剤、耐熱剤、酸化防止剤等の添加剤を含有することができる。
Additives As long as the object of the present invention is achieved, the curable composition of the present invention contains, as necessary, inorganic fillers such as fine-particle silica such as fumed silica and quartz powder, titanium oxide, and zinc oxide. , Reaction retarders such as ethynylcyclohexanol, cyclo-tetramethyltetravinyltetrasiloxane, diluents such as diphenylbis (dimethylvinylsiloxy) silane, phenyltris (dimethylvinylsiloxy) silane, diphenylbis (dimethylhydroxysiloxy) silane, Additives such as pigments, flame retardants, heat-resistant agents, and antioxidants can be contained.
組成物の製造方法
本発明の硬化性組成物は、前記各成分、すなわちポリシロキサン(A)、飽和炭化水素化合物(B)、ポリシロキサン(D)、必要に応じてヒドロシリル化反応用触媒(C)および添加剤をミキサー等公知の方法により均一に混合することによって製造することができる。
Production method of composition The curable composition of the present invention comprises the above-mentioned components, that is, polysiloxane (A), saturated hydrocarbon compound (B), polysiloxane (D), and hydrosilylation reaction catalyst (C) as necessary. ) And additives by a known method such as a mixer.
また、ポリシロキサン(A)やポリシロキサン(D)などのポリシロキサンを、飽和炭化水素化合物(B)を合成溶媒として用いて合成し、得られたポリシロキサン含有合成溶液の濃縮物を、ヒドロシリル化反応用触媒(C)などの他の成分に混合することによって製造することもできる。 Also, polysiloxanes such as polysiloxane (A) and polysiloxane (D) are synthesized using the saturated hydrocarbon compound (B) as a synthesis solvent, and the resulting polysiloxane-containing synthetic solution concentrate is hydrosilylated. It can also be produced by mixing with other components such as the reaction catalyst (C).
本発明の硬化性組成物の25℃における粘度としては、好ましくは1〜1000000mPa・sであり、より好ましくは10〜10000mPa・sである。粘度がこの範囲内であると、本組成物の操作性が向上する。 As a viscosity in 25 degreeC of the curable composition of this invention, Preferably it is 1-1000000 mPa * s, More preferably, it is 10-10000 mPa * s. When the viscosity is within this range, the operability of the composition is improved.
本発明の硬化性組成物は、1液として調製することもできるし、2液に分けて調製し、使用時に2液を混合して使用することもできる。必要に応じて、アセチレンアルコール等の硬化抑制剤を少量添加してもよい。 The curable composition of the present invention can be prepared as one liquid, or can be prepared by dividing into two liquids, and the two liquids can be mixed and used at the time of use. If necessary, a small amount of a curing inhibitor such as acetylene alcohol may be added.
<硬化物>
本発明の硬化性組成物を硬化することにより硬化物を得られる。
本発明の硬化性組成物を硬化する方法としては、たとえば、硬化性組成物を基板上に塗布した後、100〜180℃で1〜13時間加熱する方法を挙げられる。
<Hardened product>
A cured product can be obtained by curing the curable composition of the present invention.
Examples of the method for curing the curable composition of the present invention include a method in which the curable composition is applied on a substrate and then heated at 100 to 180 ° C. for 1 to 13 hours.
<光半導体装置>
本発明の光半導体装置は、半導体発光素子と、該半導体発光素子を被覆する前記硬化物とを有する。本発明の光半導体装置は、半導体発光素子に前記硬化性組成物を被覆し、その組成物を硬化することによって得られる。硬化性組成物を硬化する方法は上述のとおりである。
<Optical semiconductor device>
The optical semiconductor device of the present invention includes a semiconductor light emitting element and the cured product that covers the semiconductor light emitting element. The optical semiconductor device of the present invention is obtained by coating a semiconductor light emitting element with the curable composition and curing the composition. The method for curing the curable composition is as described above.
光半導体装置としては、LED(Light Emitting Diode、発光ダイオード)およびLD(Laser Diode)等が挙げられる。
図1は、本発明の光半導体装置の一具体例の模式図である。光半導体装置1は、電極6と、電極6上に設置され、ワイヤー7により電極6と電気的に接続された半導体発光素子2と、半導体発光素子2を収容するように配置されたリフレクター3と、リフレクター3内に充填され、半導体発光素子2を封止する封止材4を有する。封止材4は、本発明の硬化性組成物を硬化して得られる。封止材4中には、シリカや蛍光体などの粒子5が分散している。
Examples of the optical semiconductor device include an LED (Light Emitting Diode) and an LD (Laser Diode).
FIG. 1 is a schematic view of a specific example of the optical semiconductor device of the present invention. The optical semiconductor device 1 includes an
前述のとおり、本発明の硬化性組成物を硬化して得られる封止材(硬化物)のタックは小さいので、封止材に埃等が付着するおそれが小さく、また、製品の選別に使うパーツフィダーで、パッケージ同士が粘着するおそれは小さい。 As described above, since the tack of the encapsulant (cured product) obtained by curing the curable composition of the present invention is small, there is little risk of dust and the like adhering to the encapsulant, and it is used for product selection. There is little risk of sticking between packages with the parts feeder.
1.ポリシロキサンの合成
1−1.構造解析
ポリシロキサンの構造は、29Si NMRおよび13C NMRにて解析した。
1. Synthesis of polysiloxane
1-1. Structural analysis The structure of polysiloxane was analyzed by 29 Si NMR and 13 C NMR.
1−2.重量平均分子量
重量平均分子量(Mw)は、ゲルパーミエーションクロマトグラフィー(GPC)により下記条件で測定し、ポリスチレン換算値として求めた。
装置:HLC−8120C(東ソー社製)
カラム:TSK−gel MultiporeHXL−M(東ソー社製)
溶離液:THF、流量0.5mL/min、負荷量5.0%、100μL
1-2. Weight average molecular weight Weight average molecular weight (Mw) was measured by gel permeation chromatography (GPC) under the following conditions and was determined as a polystyrene equivalent value.
Apparatus: HLC-8120C (manufactured by Tosoh Corporation)
Column: TSK-gel Multipore HXL-M (manufactured by Tosoh Corporation)
Eluent: THF, flow rate 0.5 mL / min, load 5.0%, 100 μL
1−3.ポリシロキサンの合成
[合成例1] ポリシロキサン(A−1)の合成
攪拌機、還流冷却管、投入口、温度計付き四口フラスコに1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン37.3g、フェニルトリメトキシシラン234g、ジフェニルジメトキシシラン97.7g、水55g、トリフルオロメタンスルホン酸0.3gおよび重合溶媒であるメチルシクロヘキサン146gを投入して混合し、1時間加熱還流した。冷却後、下層を分離除去し、上層であるメチルシクロヘキサン溶液層を水洗した。水洗したメチルシクロヘキサン溶液層に水30gと水酸化カリウム0.3gと3−グリシドキシプロピルメチルジメトキシシラン4.4gとを加え1時間加熱還流した。続いて、メタノールを留去し、過剰の水を共沸脱水で除いた。続いて4時間加熱還流した。反応後のメチルシクロヘキサン溶液は冷却後、酢酸0.3gで中和し水洗した。水除去後、メチルシクロヘキサンを減圧下に留去し、メチルシクロヘキサン溶液を濃縮して、平均単位式が、(ViMe2SiO1/2)20 (PhSiO3/2)59 (Ph2SiO2/2)20 (EpMeSiO2/2)1(Viはビニル基、Meはメチル基、Phはフェニル基、Epはグリシドキシプロピル基を示す。)で示されるポリシロキサン(A−1)を含有するメチルシクロヘキサン溶液を得た。このポリシロキサン(A−1)の重量平均分子量は1600であった。
1-3. Synthesis of polysiloxane [Synthesis Example 1] Synthesis of polysiloxane (A-1) 1,3-divinyl-1,1,3,3-tetramethyl in a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer 37.3 g of disiloxane, 234 g of phenyltrimethoxysilane, 97.7 g of diphenyldimethoxysilane, 55 g of water, 0.3 g of trifluoromethanesulfonic acid and 146 g of methylcyclohexane as a polymerization solvent were added and mixed, followed by heating under reflux for 1 hour. After cooling, the lower layer was separated and removed, and the upper methylcyclohexane solution layer was washed with water. 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxysilane were added to the methylcyclohexane solution layer washed with water, and the mixture was heated to reflux for 1 hour. Subsequently, methanol was distilled off and excess water was removed by azeotropic dehydration. Subsequently, the mixture was heated to reflux for 4 hours. The methylcyclohexane solution after the reaction was cooled, neutralized with 0.3 g of acetic acid and washed with water. After water removal, methylcyclohexane was distilled off under reduced pressure, the methylcyclohexane solution was concentrated, and the average unit formula was (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2 ) 59 (Ph 2 SiO 2/2 ) 20 (EpMeSiO 2/2 ) 1 (Vi is a vinyl group, Me is a methyl group, Ph is a phenyl group, and Ep is a glycidoxypropyl group.) Methyl containing polysiloxane (A-1) A cyclohexane solution was obtained. The weight average molecular weight of this polysiloxane (A-1) was 1600.
[合成例2] ポリシロキサン(A−2)の合成
攪拌機、還流冷却管、投入口、温度計付き四口フラスコに1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン37.3g、フェニルトリメトキシシラン234g、ジフェニルジメトキシシラン97.7g、水55g、トリフルオロメタンスルホン酸0.3gおよび重合溶媒であるトルエン146gを投入して混合し、1時間加熱還流した。冷却後、下層を分離除去し、上層であるトルエン溶液層を水洗した。水洗したトルエン溶液層に水30gと水酸化カリウム0.3gと3−グリシドキシプロピルメチルジメトキシシラン4.4gとを加え1時間加熱還流した。続いて、メタノールを留去し、過剰の水を共沸脱水で除いた。続いて4時間加熱還流した。反応後のトルエン溶液は冷却後、酢酸0.3gで中和し水洗した。水除去後、トルエンを減圧下に留去し、トルエン溶液を濃縮して、平均単位式が、(ViMe2SiO1/2)20 (PhSiO3/2)59 (Ph2SiO2/2)20 (EpMeSiO2/2)1(Viはビニル基、Meはメチル基、Phはフェニル基、Epはグリシドキシプロピル基を示す。)で示されるポリシロキサン(A−2)を含有するトルエン溶液を得た。このポリシロキサン(A−2)の重量平均分子量は1600であった。
[Synthesis Example 2] Synthesis of polysiloxane (A-2) 1,3-divinyl-1,1,3,3-tetramethyldisiloxane was added to a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer. 3 g, phenyltrimethoxysilane 234 g, diphenyldimethoxysilane 97.7 g, water 55 g, trifluoromethanesulfonic acid 0.3 g and toluene 146 g as a polymerization solvent were added and mixed, and the mixture was heated to reflux for 1 hour. After cooling, the lower layer was separated and removed, and the upper toluene solution layer was washed with water. To the toluene solution layer washed with water, 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxysilane were added and heated to reflux for 1 hour. Subsequently, methanol was distilled off and excess water was removed by azeotropic dehydration. Subsequently, the mixture was heated to reflux for 4 hours. The toluene solution after the reaction was cooled, neutralized with 0.3 g of acetic acid and washed with water. After removing water, toluene is distilled off under reduced pressure, and the toluene solution is concentrated. The average unit formula is (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2 ) 59 (Ph 2 SiO 2/2 ) 20 (EpMeSiO 2/2 ) 1 (Vi is a vinyl group, Me is a methyl group, Ph is a phenyl group, Ep is a glycidoxypropyl group) A toluene solution containing a polysiloxane (A-2) Obtained. The weight average molecular weight of this polysiloxane (A-2) was 1600.
[合成例3] ポリシロキサン(D−1)の合成
攪拌機、還流冷却管、投入口、温度計付き四口フラスコにジフェニルジメトキシシラン220gとトリフルオロメタンスルホン酸0.6gを投入して混合し、1,1,3,3−テトラメチルジシロキサン60.5gを加え、攪拌しつつ酢酸108gを30分間かけて滴下した。滴下終了後、混合液を攪拌しながら50℃に昇温して3時間反応させた。次いで、80℃まで昇温し2時間反応させた。反応終了後、室温まで冷却した後、トルエンと水を加え、良く混合して静置し、水層を分離除去した。上層であるトルエン溶液層を3回水洗した後、減圧濃縮して、下記式(2)に示すポリシロキサン(D−1)を得た。
[Synthesis Example 3] Synthesis of polysiloxane (D-1) 220 g of diphenyldimethoxysilane and 0.6 g of trifluoromethanesulfonic acid were added to and mixed with a stirrer, a reflux condenser, a charging port, and a four-necked flask with a thermometer. 1,3,3-tetramethyldisiloxane (60.5 g) was added, and 108 g of acetic acid was added dropwise over 30 minutes while stirring. After completion of the dropwise addition, the mixture was heated to 50 ° C. with stirring and reacted for 3 hours. Subsequently, it heated up to 80 degreeC and made it react for 2 hours. After completion of the reaction, the reaction mixture was cooled to room temperature, and then toluene and water were added, mixed well and allowed to stand, and the aqueous layer was separated and removed. The upper toluene solution layer was washed with water three times and then concentrated under reduced pressure to obtain polysiloxane (D-1) represented by the following formula (2).
[合成例4] ポリシロキサン(A−3)の合成
攪拌機、還流冷却管、投入口、温度計付き四口フラスコにジフェニルジメトキシシラン81gとトリフルオロメタンスルホン酸0.2gを投入して混合し、1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン62gを加え、攪拌しつつ酢酸60gを30分間かけて滴下した。滴下終了後、混合液を攪拌しつつ50℃に昇温して3時間反応させた。反応終了後、室温まで冷却した後、トルエンと水を加え、良く混合して静置し、水層を分離除去した。上層であるトルエン溶液層を3回水洗した後、減圧濃縮して、ジフェニルビス(ジメチルビニルシロキシ)シラン(以下ポリシロキサン(A−3)と記す。)を得た。
Synthesis Example 4 Synthesis of Polysiloxane (A-3) 81 g of diphenyldimethoxysilane and 0.2 g of trifluoromethanesulfonic acid were added to and mixed with a stirrer, a reflux condenser, a charging port, and a four-necked flask with a thermometer. , 3-Divinyl-1,1,3,3-tetramethyldisiloxane (62 g) was added, and 60 g of acetic acid was added dropwise over 30 minutes while stirring. After completion of dropping, the mixture was stirred and heated to 50 ° C. and reacted for 3 hours. After completion of the reaction, the reaction mixture was cooled to room temperature, and then toluene and water were added, mixed well and allowed to stand, and the aqueous layer was separated and removed. The upper toluene solution layer was washed with water three times and then concentrated under reduced pressure to obtain diphenylbis (dimethylvinylsiloxy) silane (hereinafter referred to as polysiloxane (A-3)).
2.硬化性組成物の調製
2−1.メチルシクロヘキサンの含有割合
メチルシクロヘキサンおよびトルエンの含有割合は、ガスクロマトグラフィー(GC)により下記条件で測定した。
装置:Agilent Technologies 7890A
カラム:DB−1701
検出器:FID.
2. Preparation of curable composition
2-1. Content of the content methylcyclohexane and toluene methylcyclohexane was measured under the following conditions by gas disk chromatography (GC).
Equipment: Agilent Technologies 7890A
Column: DB-1701
Detector: FID.
2−2.硬化性組成物の調製
[実施例1]
合成例1で得たポリシロキサン(A−1)のメチルシクロヘキサン溶液を濃縮し、ポリシロキサン(A−1)含有濃縮液(1)を得た。ポリシロキサン(A−1)含有濃縮液(1)、ポリシロキサン(A−3)、下記C−1、上記D−1および下記E−1成分を下記表1に示す割合で混合し、実施例1の硬化性組成物を得た。硬化性組成物中に含まれるメチルシクロヘキサン(B成分)は、合成例1の重合溶媒由来である。
2-2. Preparation of curable composition [Example 1]
The polycyclohexane (A-1) methylcyclohexane solution obtained in Synthesis Example 1 was concentrated to obtain a polysiloxane (A-1) -containing concentrated liquid (1). Polysiloxane (A-1) containing concentrate (1), polysiloxane (A-3), were mixed at a ratio shown below C-1, the upper Symbol D-1 and the following E-1 component in Table 1, exemplary The curable composition of Example 1 was obtained. The methylcyclohexane (component B) contained in the curable composition is derived from the polymerization solvent of Synthesis Example 1.
[実施例2および3]
合成例1で得たポリシロキサン(A−1)のメチルシクロヘキサン溶液を濃縮し、実施例1のポリシロキサン(A−1)含有濃縮液(1)より濃縮度の高いポリシロキサン(A−1)含有濃縮液(2)と、さらに濃縮度の高いポリシロキサン(A−1)含有濃縮液(3)とを得た。ポリシロキサン(A−1)含有濃縮液(1)の代わりにポリシロキサン(A−1)含有濃縮液(2)を用いたこと以外は実施例1と同様の手順にて、下記表1に示す割合で各成分を混合し、実施例2の硬化性組成物を得た。ポリシロキサン(A−1)含有濃縮液(1)の代わりにポリシロキサン(A−1)含有濃縮液(3)を用いたこと以外は実施例1と同様の手順にて、下記表1に示す割合で各成分を混合し、実施例3の硬化性組成物を得た。各硬化性組成物中に含まれるメチルシクロヘキサン(B成分)は、合成例1の重合溶媒由来である。
[Examples 2 and 3]
The polycyclohexane (A-1) having a higher degree of concentration than the polysiloxane (A-1) -containing concentrate (1) of Example 1 is concentrated by concentrating the methylcyclohexane solution of the polysiloxane (A-1) obtained in Synthesis Example 1. Contained concentrated liquid (2) and further concentrated polysiloxane (A-1) -containing concentrated liquid (3) were obtained. It shows in the following Table 1 in the procedure similar to Example 1 except having used the polysiloxane (A-1) containing concentrate (2) instead of the polysiloxane (A-1) containing concentrate (1). Each component was mixed at a ratio to obtain a curable composition of Example 2. It shows in the following Table 1 in the procedure similar to Example 1 except having used the polysiloxane (A-1) containing concentrated liquid (3) instead of the polysiloxane (A-1) containing concentrated liquid (1). Each component was mixed at a ratio to obtain a curable composition of Example 3. The methylcyclohexane (component B) contained in each curable composition is derived from the polymerization solvent of Synthesis Example 1.
[比較例1]
合成例2で得たポリシロキサン(A−2)のトルエン溶液からトルエンを留去し、ポリシロキサン(A−2)を得た。下記表1に示す割合で各成分を混合し、メチルシクロヘキサン(B成分)を含有しない比較例1の硬化性組成物を得た。
表1中の各成分の詳細は以下の通りである。
[Comparative Example 1]
Toluene was distilled off from the toluene solution of polysiloxane (A-2) obtained in Synthesis Example 2 to obtain polysiloxane (A-2). Each component was mixed in the ratio shown in the following Table 1, and the curable composition of the comparative example 1 which does not contain methylcyclohexane (B component) was obtained.
The details of each component in Table 1 are as follows.
E−1:エチニルシクロヘキサノール
E-1: Ethynylcyclohexanol
3.硬化性組成物の評価
実施例1〜3および比較例1の硬化性組成物について、下記、3−1〜3−3の手法にて、評価した。評価結果を前記表1に示す。
3. Evaluation of Curable Composition The curable compositions of Examples 1 to 3 and Comparative Example 1 were evaluated by the following methods 3-1 to 3-3. The evaluation results are shown in Table 1.
3−1.粘度
硬化性組成物の粘度を、E型粘度計を用いて25℃において測定した。
3-1. The viscosity of the viscosity curable composition was measured at 25 ° C. using an E-type viscometer.
3−2.硬度
硬化性組成物をテフロンの平板に2mm厚の枠をはめ枠の高さになるように塗布して、150℃の熱風循環式オーブンで5時間加熱することにより縦50mm、横50mm、高さ1mmの硬化物を作製した。この硬化物の硬さをJIS K6253に規定されたタイプDデュロメータにより測定した。
3-2. A hard- curing composition is applied to a Teflon flat plate with a 2 mm thick frame so that it is as high as the frame, and heated in a hot air circulation oven at 150 ° C. for 5 hours to be 50 mm long, 50 mm wide, and high A 1 mm cured product was produced. The hardness of the cured product was measured with a type D durometer defined in JIS K6253.
3−3−1.タック(触診による評価)
硬化性組成物をテフロン(商標名)の平板に2mm厚の枠をはめ、枠の高さになるように塗布して、150℃の熱風循環式オーブンで5時間加熱することにより縦50mm、横50mm、高さ1mmの硬化物を作製した。この硬化物の表面を指で触ってそのタックについて、下記に示す基準で評価した。
A:ベトツキなし
C:ベトツキあり
3-3-1. Tack (evaluation by palpation)
The curable composition is put on a Teflon (trade name) flat plate with a 2 mm thick frame, applied to the height of the frame, and heated in a hot air circulation oven at 150 ° C. for 5 hours to be 50 mm long and horizontal A cured product having a height of 50 mm and a height of 1 mm was produced. The surface of this cured product was touched with a finger and the tack was evaluated according to the following criteria.
A: No stickiness
C : Sticky
3−3−2.タック(タック試験装置による評価)
硬化性組成物を平滑基板に100μm厚になるように塗布して、150℃の熱風循環式オーブンで5時間加熱することにより、硬化物を作製した。得られた硬化物のタックをタック試験装置にて測定した。測定方法の詳細は以下の通りである。
装置名:TAC−1000(株式会社レスカ製)
端子:SUS製 10mmφ
端子温度:25℃
押し込み圧:0.05MPa
押し込み時間:60秒間
3-3-2. Tack (evaluation by tack test equipment)
The curable composition was applied to a smooth substrate to a thickness of 100 μm and heated in a hot air circulation oven at 150 ° C. for 5 hours to prepare a cured product. The tack of the resulting cured product was measured with a tack tester. Details of the measurement method are as follows.
Device name: TAC-1000 (manufactured by Reska Co., Ltd.)
Terminal: SUS 10mmφ
Terminal temperature: 25 ° C
Indentation pressure: 0.05 MPa
Push-in time: 60 seconds
Claims (3)
項2に記載のLED。 It has a semiconductor light emitting device and the cured product covering the semiconductor light emitting device.
Item 3. The LED according to Item 2 .
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012184135A JP5621819B2 (en) | 2011-12-20 | 2012-08-23 | Curable composition, cured product, and optical semiconductor device |
KR1020120118863A KR101594343B1 (en) | 2011-12-20 | 2012-10-25 | Curable composition and method for producing thereof, cured product, and optical semiconductor device |
TW101142429A TWI580733B (en) | 2011-12-20 | 2012-11-14 | Curable composition and fabricating method thereof, cured object and optical semiconductor device |
CN201210477565.XA CN103173019B (en) | 2011-12-20 | 2012-11-21 | Curable composition and manufacture method, hardening thing and optical semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011278160 | 2011-12-20 | ||
JP2011278160 | 2011-12-20 | ||
JP2012184135A JP5621819B2 (en) | 2011-12-20 | 2012-08-23 | Curable composition, cured product, and optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013147633A JP2013147633A (en) | 2013-08-01 |
JP5621819B2 true JP5621819B2 (en) | 2014-11-12 |
Family
ID=49045459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012184135A Active JP5621819B2 (en) | 2011-12-20 | 2012-08-23 | Curable composition, cured product, and optical semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5621819B2 (en) |
TW (1) | TWI580733B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015111229A1 (en) * | 2014-01-24 | 2015-07-30 | 住友化学株式会社 | Liquid silicone resin composition |
EP3101050B1 (en) | 2014-01-28 | 2021-04-14 | LG Chem, Ltd. | Cured product |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56167755A (en) * | 1980-05-30 | 1981-12-23 | Shin Etsu Chem Co Ltd | Organopolysiloxane composition |
JP3110845B2 (en) * | 1992-01-29 | 2000-11-20 | 鐘淵化学工業株式会社 | Curable composition |
JP3436464B2 (en) * | 1996-10-31 | 2003-08-11 | 東レ・ダウコーニング・シリコーン株式会社 | Addition reaction-curable conductive silicone composition and method for producing cured conductive silicone |
DE19734260A1 (en) * | 1997-08-07 | 1999-02-11 | Wacker Chemie Gmbh | Separation force regulation of sticky substances repellent silicone coatings |
JP3999994B2 (en) * | 2002-04-03 | 2007-10-31 | 東レ・ダウコーニング株式会社 | Conductive silicone rubber composition |
CN1872927B (en) * | 2005-05-31 | 2010-04-28 | 台湾道康宁股份有限公司 | Polysiloxane anti-adhesion coating composition |
JP5148088B2 (en) * | 2006-08-25 | 2013-02-20 | 東レ・ダウコーニング株式会社 | Curable organopolysiloxane composition and semiconductor device |
EP2727925B1 (en) * | 2007-04-17 | 2016-04-06 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
JP2009046617A (en) * | 2007-08-21 | 2009-03-05 | Kaneka Corp | MANUFACTURING METHOD FOR SiH GROUP-CONTAINING COMPOUND |
JP2009173759A (en) * | 2008-01-23 | 2009-08-06 | Kaneka Corp | Modified product of polyhedral-structure polysiloxane, and composition and cured product using the modified product |
JP4656340B2 (en) * | 2008-03-03 | 2011-03-23 | 信越化学工業株式会社 | Thermally conductive silicone grease composition |
JP2009298930A (en) * | 2008-06-13 | 2009-12-24 | Kaneka Corp | Polysiloxane-based composition |
JP5182515B2 (en) * | 2008-12-25 | 2013-04-17 | 信越化学工業株式会社 | Thermally conductive silicone grease composition |
-
2012
- 2012-08-23 JP JP2012184135A patent/JP5621819B2/en active Active
- 2012-11-14 TW TW101142429A patent/TWI580733B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI580733B (en) | 2017-05-01 |
TW201326312A (en) | 2013-07-01 |
JP2013147633A (en) | 2013-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105924974B (en) | Addition-curable silicone resin composition and die attach material for optical semiconductor device | |
JP2013139547A (en) | Curable composition, cured product, and optical semiconductor device | |
TWI544665B (en) | Silicon oxide compositions for semiconductor encapsulation | |
JP6024839B2 (en) | Organopolysiloxane compound, method for producing the same, and addition-curable silicone composition | |
KR101472829B1 (en) | Curable composition, cured product, photo-semiconductor device, and polysiloxane | |
KR20140043744A (en) | Cross-linkable silicone composition and cross-linked product thereof | |
JP2019131806A (en) | Infrared transmitting curing composition, cured article thereof and light semiconductor device | |
JP5696798B2 (en) | Polysiloxane | |
JP5858027B2 (en) | Curable composition, cured product, and optical semiconductor device | |
JP5621819B2 (en) | Curable composition, cured product, and optical semiconductor device | |
KR101594343B1 (en) | Curable composition and method for producing thereof, cured product, and optical semiconductor device | |
JP5660145B2 (en) | Curable composition, cured product, and optical semiconductor device | |
WO2019099676A1 (en) | One-part curable silicone composition | |
TWI811547B (en) | Addition hardening silicon oxide composition, cured product and optical semiconductor element | |
KR20130062869A (en) | Curable composition, cured product, and optical semiconductor device | |
JP6006554B2 (en) | Addition-curable silicone composition, optical element sealing material comprising the composition, optical element sealed with the optical element sealing material, and method for producing addition-curable silicone composition | |
JP6905486B2 (en) | Additive-curable silicone compositions, silicone cured products, and semiconductor devices | |
JP2015120929A (en) | Curable composition, cured film, polysiloxane and optical semiconductor device | |
JP2013028709A (en) | Curable composition, cured film, polysiloxane and optical semiconductor device | |
TWI582169B (en) | Curable composition, cured product and optical semiconductor device | |
JP5284490B2 (en) | Silicone composition for semiconductor encapsulation | |
TW202216855A (en) | Curable fluorosilicone composition | |
JP2017036391A (en) | Curable composition, cured product, polysiloxane, and optical semiconductor device | |
JP2014122325A (en) | Method for forming protective film, protective film and curable composition | |
KR20140055734A (en) | New epoxy compounds, method for preparing thereof and curable polyorganosiloxane composition containing same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130521 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130521 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20130521 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20130802 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130926 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140326 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140708 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140804 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140826 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140908 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5621819 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |