JP5176076B2 - 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法 - Google Patents
感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法 Download PDFInfo
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- JP5176076B2 JP5176076B2 JP2009550008A JP2009550008A JP5176076B2 JP 5176076 B2 JP5176076 B2 JP 5176076B2 JP 2009550008 A JP2009550008 A JP 2009550008A JP 2009550008 A JP2009550008 A JP 2009550008A JP 5176076 B2 JP5176076 B2 JP 5176076B2
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- Materials For Photolithography (AREA)
Description
攪拌機、温度計、冷却管、及び窒素置換装置を備えたフラスコ内に、3,5−ジアミノ安息香酸(分子量152.2、以下「DABA」と略す)1.89g、脂肪族エーテルジアミン(BASF社製「D−400」(商品名)、分子量452.4)15.21g、1,1,3,3−テトラメチル−1,3−ビス(4−アミノフェニル)ジシロキサン(信越化学製「LP−7100」(商品名)、分子量248.5)0.39g、及び、N−メチル−2−ピロリジノン(以下「NMP」と略す)116gを仕込んだ。
攪拌機、温度計、及び窒素置換装置を備えたフラスコ内に、5,5’−メチレン−ビス(アントラニリックアシッド)(分子量286.3、以下「MBAA」と略す)2.16g、脂肪族エーテルジアミン(「D−400」)15.13g、1,1,3,3−テトラメチル−1,3−ビス(4−アミノフェニル)ジシロキサン(「LP−7100」)1.63g、及び、NMP115gを仕込んだ。
攪拌機、温度計、及び窒素置換装置を備えたフラスコ内に、2,2−ビス(4−(4−アミノフェノキシ)フェニル)プロパン(分子量410.5、以下「BAPP」と略す)20.5g、及び、NMP101gを仕込んだ。
BPE−100:新中村化学工業社製、エトキシ化ビスフェノールAジメタクリレート。
M―313:東亜合成社製、イソシアヌル酸EO変性トリ/ジアクリレート。
VG−3101:プリンテック、3官能エポキシ樹脂。
BEO−60E:新日本理化社製、ビスフェノールAビス(トリエチレングリコールグリシジルエーテル)。
TrisP−PA:本州化学社製、トリスフェノール化合物(α,α’,α”−トリス(4−ヒドロキシフェニル)−1−エチル−4−イソプロピルベンゼン)。
R972:日本アエロジル社製、疎水性フュームドシリカ(平均粒径:約16nm)。
I−OXE01:チバ・スペシャルティ・ケミカルズ社製、1,2−オクタンジオン,1−[4−(フェニルチオ)フェニル―,2−(O−ベンゾイルオキシム)]、オキシムエステル基含有化合物(3%重量減少温度:210℃、365nmでの分子吸光係数:7000ml/g・cm)。
I−OXE02:チバ・スペシャルティ・ケミカルズ社製、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム)、カルバゾール基及びオキシムエステル基含有化合物(3%重量減少温度:365℃、365nmでの分子吸光係数:7700ml/g・cm)。
N−1919:ADEKA社製、構造未開示、オキシムエステル基含有化合物(3%重量減少温度:270℃、365nmでの分子吸光係数:4500ml/g・cm)。
N−1414:ADEKA社製、3,6−ビス−(2−メチル−2−モルホリノ−プロピオニル)−9−N−オクチルカルバゾール、カルバゾール基含有化合物、(3%重量減少温度:370℃、365nmでの分子吸光係数:2000ml/g・cm)
D−1173:チバ・スペシャルティ・ケミカルズ社製、2−ヒドロキシ−2−メチル−1−フェニル−プロパン−1−オン(3%重量減少温度:90℃、365nmでの分子吸光係数:50ml/g・cm)。
I―651:チバ・スペシャルティ・ケミカルズ社製、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン(3%重量減少温度:140℃、365nmでの分子吸光係数:350ml/g・cm)。
I−819:チバ・スペシャルティ・ケミカルズ社製、ビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド(3%重量減少温度:190℃、365nmでの分子吸光係数:2300ml/g・cm)。
D―TPO:チバ・スペシャルティ・ケミカルズ社製、2,4,6−トリメチルベンゾイル−ジフェニル−フォスフィンオキサイド(3%重量減少温度:230℃、365nmでの分子吸光係数:400ml/g・cm)。
I―379EG:チバ・スペシャルティ・ケミカルズ社製、2−ジメチルアミノ−2−(4−メチルーベンジル)−1−(4−モリフォリンー4−イル−フェニル)−ブタンー1−オン(3%重量減少温度:230℃、365nmでの分子吸光係数:7000ml/g・cm)。
NMP:関東化学社製、N−メチル−2−ピロリジノン。
支持台上に載せたシリコンウェハ(6インチ径、厚さ400μm)の裏面(支持台と反対側の面)に、実施例1〜8及び比較例1〜5で得られた接着シートを、接着剤層をシリコンウェハ側にしてロール(温度100℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。次いで、基材(PETフィルム)を剥がし、接着剤層上に、厚み80μm、幅10mm、長さ40mmのポリイミドフィルム(宇部興産社製、「ユーピレックス」(商品名))を上記と同様の条件でロールにより加圧して積層した。このようにして準備したサンプルについて、レオメータ(東洋製機製作所社製、「ストログラフE−S」(商品名))を用いて、室温で90°ピール試験を行って、接着剤層−ユーピレックス間のピール強度を測定した。その測定結果に基づいて、ピール強度が2N/cm以上のサンプルをA、2N/cm未満のサンプルをBとして評価した。その結果を表1,2に示す。
接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に、実施例1〜8及び比較例2〜5の接着シートは温度100℃で、比較例1の接着シートは温度300℃で、接着剤層をシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。
接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に、実施例1〜8及び比較例2〜5の接着シートは温度100℃で、比較例1の接着シートは温度300℃で、接着剤層をシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。
シリコンウェハ(6インチ径、厚さ400μm)を、5mm×5mmの大きさで深さ180μmまでハーフカットした。その後、接着シートを、ハーフカット処理したシリコンウェハ上に、実施例1〜8及び比較例2〜5の接着シートは温度100℃で、比較例1の接着シートは温度300℃で、接着剤層をシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。そして、得られたサンプルを高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))で500mJ/cm2で露光し、80℃のホットプレート上で約30秒間放置した。その後、基材(PETフィルム)を除去し、サンプルを5mm×5mmに個片化した。
なお、図13に示すピール強度測定装置300においては、プッシュプルゲージ31に取り付けられたロッドの先端に、取っ手32が支点33の周りで角度可変に設けられている。そして、260℃ピール強度の測定は、突起部を有するシリコンウェハ34とガラス基板35とがフィルム状接着剤1を介して接着された試験片を260℃の熱盤36上に載置し、シリコンウェハ34の突起部に取っ手32を引っ掛けた状態で、取っ手32を0.5mm/秒で移動させたときの剥離応力をプッシュプルゲージ31で測定することにより行った。
接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に、実施例1〜8、比較例2〜5の接着シートは温度100℃で、比較例1の接着シートは温度300℃で、接着剤層をシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。
Claims (14)
- (A)カルボキシル基及び/又は水酸基を有する樹脂と、
(B)熱硬化性樹脂と、
(C)放射線重合性化合物と、
(D)光開始剤と、を含有し、
前記(A)カルボキシル基及び/又は水酸基を有する樹脂が、ポリイミド樹脂であり、
前記ポリイミド樹脂が、テトラカルボン酸二無水物と、分子中にカルボキシル基及び/又は水酸基を有するジアミンを含むジアミン成分と、を反応させて得られるポリイミド樹脂であり、
前記(B)熱硬化性樹脂がエポキシ樹脂であり、
前記(C)放射線重合性化合物が、アクリレート化合物及びメタクリレート化合物からなる群より選ばれる少なくとも一種であり、
前記(D)光開始剤が、1,2−オクタンジオン,1−[4−(フェニルチオ)フェニル―,2−(O−ベンゾイルオキシム)]、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム)、3,6−ビス−(2−メチル−2−モルホリノ−プロピオニル)−9−N−オクチルカルバゾール、2,4,6−トリメチルベンゾイル−ジフェニル−フォスフィンオキサイド、及び、2−ジメチルアミノ−2−(4−メチル−ベンジル)−1−(4−モリフォリン−4−イル−フェニル)−ブタン−1−オンからなる群より選ばれる少なくとも一種を含み、
組成物中の全光開始剤混合物の3%重量減少温度が200℃以上である、感光性接着剤組成物。 - 前記(A)カルボキシル基及び/又は水酸基を有する樹脂のガラス転移温度が150℃以下であり、重量平均分子量が5000〜300000である、請求項1に記載の感光性接着剤組成物。
- 前記(A)カルボキシル基及び/又は水酸基を有する樹脂が、アルカリ可溶性樹脂である、請求項1又は2に記載の感光性接着剤組成物。
- 請求項1〜7のいずれか一項に記載の感光性接着剤組成物からなる、フィルム状接着剤。
- 基材と、該基材の一面上に設けられた請求項1〜7のいずれか一項に記載の感光性接着剤組成物からなる接着剤層と、を備える、接着シート。
- 請求項8に記載のフィルム状接着剤とダイシングシートとを有し、
前記フィルム状接着剤と前記ダイシングシートとが積層されている、接着シート。 - 請求項1〜7のいずれか一項に記載の感光性接着剤組成物からなる接着剤層を被着体上に形成し、該接着剤層をフォトマスクを介して露光し、露光後の前記接着剤層をアルカリ現像液により現像処理することにより形成される、接着剤パターン。
- 半導体ウェハと、該半導体ウェハの一面上に設けられた請求項1〜7のいずれか一項に記載の感光性接着剤組成物からなる接着剤層と、を備える、接着剤層付半導体ウェハ。
- 支持部材と、該支持部材に搭載された半導体素子と、前記支持部材と前記半導体素子との間に介在する接着剤層と、を備え、前記接着剤層が請求項1〜7のいずれか一項に記載の感光性接着剤組成物によって形成されている、半導体装置。
- 請求項1〜7のいずれか一項に記載の感光性接着剤組成物を用いて、半導体素子と半導体素子搭載用支持部材とを接着する工程を有する、半導体装置の製造方法。
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JP2013079389A (ja) * | 2008-01-16 | 2013-05-02 | Hitachi Chemical Co Ltd | 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法 |
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Publication number | Publication date |
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JP5968773B2 (ja) | 2016-08-10 |
CN101910350A (zh) | 2010-12-08 |
US20110121435A1 (en) | 2011-05-26 |
WO2009090922A1 (ja) | 2009-07-23 |
JP2013079389A (ja) | 2013-05-02 |
JPWO2009090922A1 (ja) | 2011-05-26 |
TW200951193A (en) | 2009-12-16 |
CN101910350B (zh) | 2013-01-16 |
KR20100076064A (ko) | 2010-07-05 |
KR101184467B1 (ko) | 2012-09-19 |
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