JP5082710B2 - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP5082710B2
JP5082710B2 JP2007241829A JP2007241829A JP5082710B2 JP 5082710 B2 JP5082710 B2 JP 5082710B2 JP 2007241829 A JP2007241829 A JP 2007241829A JP 2007241829 A JP2007241829 A JP 2007241829A JP 5082710 B2 JP5082710 B2 JP 5082710B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
light
emitting device
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007241829A
Other languages
Japanese (ja)
Other versions
JP2009076524A (en
Inventor
信彦 ▲高▼松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2007241829A priority Critical patent/JP5082710B2/en
Publication of JP2009076524A publication Critical patent/JP2009076524A/en
Application granted granted Critical
Publication of JP5082710B2 publication Critical patent/JP5082710B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169Platinum (Pt) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Led Device Packages (AREA)

Description

本発明は、発光装置に関し、より詳細には、発光素子が、金属部材に対してダイボンドされて構成された発光装置に関する。   The present invention relates to a light emitting device, and more particularly to a light emitting device in which a light emitting element is formed by die bonding to a metal member.

従来から、発光素子が、絶縁基板表面を被覆する金属部材からなるダイパッド部に対してダイボンドされ、さらにパッケージ(封止部材)に埋め込まれて構成された発光装置が提案されている。この発光装置は、発光素子を絶縁基板の表面に形成したダイパッド部に対してダイボンディングする際、半田ペースト等の加熱溶融性のダイボンド部材を、適量、ダイパッド部の表面に塗着し、このダイボンド部材の上に、発光素子を載置し、ダイボンド部材をリフローさせた後に凝固させる方法により製造されている(例えば、特許文献1)。   Conventionally, there has been proposed a light emitting device in which a light emitting element is die-bonded to a die pad portion made of a metal member that covers the surface of an insulating substrate and is embedded in a package (sealing member). In this light emitting device, when die bonding is performed on the die pad portion formed on the surface of the insulating substrate, an appropriate amount of a heat-meltable die bond member such as solder paste is applied to the surface of the die pad portion. It is manufactured by a method in which a light emitting element is placed on a member and the die bonding member is reflowed and then solidified (for example, Patent Document 1).

この製造方法では、絶縁基板におけるダイパッド部は、ダイボンディングする矩形状の発光素子の長さ寸法及び幅寸法の0.50〜1.50倍とされており、これによって、リフロー時にダイボンド部材の表面張力によるセルフアライメント効果で、発光素子をダイパッド部の中心に正確に配置させている。   In this manufacturing method, the die pad portion in the insulating substrate is 0.50 to 1.50 times the length and width of the rectangular light-emitting element to be die-bonded, whereby the surface of the die bond member is reflowed. Due to the self-alignment effect due to tension, the light emitting element is accurately arranged at the center of the die pad portion.

また、ダイパッド部の周囲に、当該ダイパッド部から一体的に外向きに延びる細幅の延長部を部分的に設けるという構成にすることにより、前記ダイパッド部の表面に塗着したダイボンディング剤の一部は、前記細幅の延長部の表面に広がり、この広がりによって、前記ダイパッド部の表面におけるダイボンディング剤の盛り上がり高さを、当該ダイボンディング剤によるセルフアライメントを確保した状態のもとで、低くできるから、半導体チップにおけるダイパッド部からの浮き上がり高さを低くできるとともに、高さの不揃いを低減でき、しかも、ダイボンディング剤に対する半導体チップのめり込み深さが浅くなって、半導体チップに電気的ショートが発生することを低減でき、且つ、半導体チップが発光ダイオードチップである場合には、当該発光ダイオードチップからの発光量が低下することを回避できるということが開示されている。   In addition, by forming a narrow extension part extending outward from the die pad part integrally around the die pad part, one die bonding agent applied to the surface of the die pad part is provided. The part spreads on the surface of the narrow extension part, and by this spread, the rising height of the die bonding agent on the surface of the die pad part is lowered under the state where self-alignment by the die bonding agent is ensured. As a result, the floating height of the semiconductor chip from the die pad can be reduced, the unevenness of the height can be reduced, and the depth of penetration of the semiconductor chip with respect to the die bonding agent becomes shallow, resulting in an electrical short circuit in the semiconductor chip. And the semiconductor chip is a light-emitting diode chip. The amount of light emission from the light-emitting diode chip is disclosed that avoids a decrease.

特開2003−264267号公報JP 2003-264267 A

しかしながら、ダイパッド部から一体的に外向きに延びる細幅の延長部を部分的に設けると、ダイボンディング剤の一部を広げることはできるが、ダイパッド部が大きくなってしまい、発光装置を小型化することが困難となる。   However, if a narrow extension that extends outward from the die pad part is partially provided, a part of the die bonding agent can be expanded, but the die pad part becomes large and the light emitting device is downsized. Difficult to do.

さらに、延長部の延出方向がワイヤボンディング部に隣接することにより、ワイヤボンディング部及び給電部までダイボンディング剤が広がるという問題が生じる場合がある。これにより、ワイヤの接合不良という問題が生じる場合がある。   Furthermore, when the extension direction of the extension portion is adjacent to the wire bonding portion, there may be a problem that the die bonding agent spreads to the wire bonding portion and the power feeding portion. This may cause a problem of wire bonding failure.

特に、近年、発光装置に対する小型化および高出力化への要求が高まっている現状においては、1つのパッケージに複数の発光素子を搭載する場合があるが、このような場合においては、上記問題は、より深刻な問題となる。   In particular, in recent years, there is a case where a plurality of light emitting elements are mounted in one package in the present situation that demand for miniaturization and high output for light emitting devices is increasing. In such a case, the above problem is It becomes a more serious problem.

本発明は、上記課題に鑑みなされたものであり、ダイパッド部に発光素子を正確に配置しつつ、ワイヤボンディング部へのダイボンディング剤の広がりや回りこみを抑制し、ワイヤの接合不良という問題を解決することにより、小型で高信頼性の発光装置を提供することを目的とする。   The present invention has been made in view of the above problems, and while accurately arranging the light emitting element in the die pad portion, the spread and wraparound of the die bonding agent to the wire bonding portion is suppressed, and the problem of poor bonding of the wire It is an object of the present invention to provide a light emitting device that is small and highly reliable.

以上の目的を達成するために、本発明に係る半導体装置は、底部に金属膜が形成された発光素子と、前記発光素子が載置され、該発光素子の下部に配置された第1の金属部材と、前記第1の金属部材と前記発光素子の金属膜とを接着する金属からなるダイボンド部材と、前記発光素子の電極とワイヤにより接続される少なくとも1つの第2の金属部材と、前記第1の金属部材および前記第2の金属部材が配置される支持体を有し、前記第1の金属部材は、平面視において、前記発光素子の底面と略同じ大きさに形成された多角形のダイパッド部と、前記ダイパッド部の外形が形作る辺から突出した突出部とを有し、前記ワイヤが跨ぐ辺は略直線であり、前記突出部の突出する方向と前記ワイヤの接続方向とは、略垂直であることを特徴とする。   In order to achieve the above object, a semiconductor device according to the present invention includes a light emitting element having a metal film formed on a bottom, and a first metal on which the light emitting element is placed and disposed below the light emitting element. A member, a die-bonding member made of a metal that bonds the first metal member and the metal film of the light emitting element, at least one second metal member connected to the electrode of the light emitting element by a wire, and the first A first metal member and a support body on which the second metal member is disposed, and the first metal member has a polygonal shape formed in substantially the same size as the bottom surface of the light emitting element in a plan view. A die pad part, and a protruding part protruding from a side formed by the outer shape of the die pad part, the side over which the wire straddles is substantially straight, and the protruding direction of the protruding part and the connecting direction of the wire are approximately Characterized by being vertical

この発光装置においては、前記金属膜はAg、Rh、Auの積層膜を有することが好ましい。   In this light emitting device, the metal film preferably has a laminated film of Ag, Rh, and Au.

また、前記ダイボンド部材はAuSn系であることが好ましい。   The die bond member is preferably AuSn-based.

さらに、前記支持体は、前記発光素子を実装した状態で基板に実装可能なサブマウントであることが好ましい。   Furthermore, it is preferable that the support is a submount that can be mounted on a substrate in a state where the light emitting element is mounted.

本発明の発光装置によれば、ダイパッド部に発光素子を正確に配置しつつ、ワイヤボンディング部へのダイボンディング剤の広がりや回りこみを抑制し、ワイヤの接合不良という問題を解決することができる。その結果、小型で高信頼性の発光装置を提供することができる。   According to the light emitting device of the present invention, it is possible to solve the problem of wire bonding failure by suppressing the spread and wraparound of the die bonding agent to the wire bonding portion while accurately arranging the light emitting element in the die pad portion. . As a result, a small and highly reliable light-emitting device can be provided.

本発明を実施するための最良の形態を、以下に説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するための発光装置を例示するものであって、本発明は発光装置を以下に限定するものではない。   The best mode for carrying out the present invention will be described below. However, the form shown below illustrates the light emitting device for embodying the technical idea of the present invention, and the present invention does not limit the light emitting device to the following.

また、本明細書は特許請求の範囲に示される部材を、実施の形態の部材に特定するものでは決してない。実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。なお、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細な説明を適宜省略する。   Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. The dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the description unless otherwise specified. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate.

本実施形態に係る発光装置は、底部に金属膜が形成された発光素子と、前記発光素子が載置され、該発光素子の下部に配置された第1の金属部材と、前記第1の金属部材と前記発光素子の金属膜とを接着する金属からなるダイボンド部材と、前記発光素子の電極とワイヤにより接続される少なくとも1つの第2の金属部材と、前記第1の金属部材および前記第2の金属部材が配置される支持体を有し、前記第1の金属部材は、平面視において、前記発光素子の底面と略同じ大きさに形成された多角形のダイパッド部と、前記ダイパッド部の外形が形作る辺から突出した突出部とを有し、前記ワイヤが跨ぐ辺は略直線であり、前記突出部の突出する方向と前記ワイヤの接続方向とは、略垂直であることを特徴とするものである。   The light-emitting device according to the present embodiment includes a light-emitting element having a metal film formed on the bottom, a first metal member on which the light-emitting element is placed and disposed below the light-emitting element, and the first metal A die-bonding member made of a metal that bonds the member and the metal film of the light-emitting element; at least one second metal member connected to the electrode of the light-emitting element by a wire; the first metal member and the second metal member; The first metal member has a polygonal die pad portion formed in substantially the same size as the bottom surface of the light emitting element in a plan view, and the die pad portion of the die pad portion. A protruding portion protruding from a side formed by the outer shape, a side over which the wire extends is substantially straight, and a protruding direction of the protruding portion and a connecting direction of the wire are substantially vertical. Is.

本発明の発光装置の構成を図1乃至図3で説明する。図1乃至図3は、本実施形態に係る発光装置の要部を示す図である。   The structure of the light emitting device of the present invention will be described with reference to FIGS. 1 to 3 are views showing a main part of the light emitting device according to the present embodiment.

支持体107には、第1の金属部材103および第2の金属部材104が配置され、第1の金属部材104に発光素子105が金属からなるダイボンド部材で固定されている。発光素子の電極と、第2の金属部材104はワイヤ106で接続され、導通される。   A first metal member 103 and a second metal member 104 are arranged on the support 107, and the light emitting element 105 is fixed to the first metal member 104 with a die bond member made of metal. The electrode of the light emitting element and the second metal member 104 are connected by a wire 106 and are electrically connected.

発光素子105が載置される第1の金属部材103は、図2に示すように、発光素子105の底面と略同じ大きさに形成されたダイパッド部102と、ダイパッド部102の外形が形作る辺から突出した突出部101を有する。ダイパッド部102には、底部に金属膜が形成された発光素子が載置され、金属からなるダイボンド部材で固定される。   As shown in FIG. 2, the first metal member 103 on which the light emitting element 105 is placed includes a die pad portion 102 formed to be approximately the same size as the bottom surface of the light emitting element 105, and a side formed by the outer shape of the die pad portion 102. A protrusion 101 protruding from the bottom. On the die pad portion 102, a light emitting element having a metal film formed on the bottom is placed and fixed with a die bond member made of metal.

発光素子105は、支持体107に形成されたダイパッド部102にダイボンド部材を適宜量塗着した後、その上に底部に金属膜を有する発光素子105を載置して、加熱にて溶融したのち凝固させるという方法で固定される。ダイボンド部材が溶融された際には、ダイボンド部材は、主としてダイボンド部材が塗着された第1の金属部材に沿って広がることとなる。   The light-emitting element 105 is obtained by applying an appropriate amount of a die bond member to the die pad portion 102 formed on the support 107, placing the light-emitting element 105 having a metal film on the bottom, and melting it by heating. It is fixed by the method of solidifying. When the die bond member is melted, the die bond member mainly spreads along the first metal member to which the die bond member is applied.

このように、ダイボンド部材が広がることにより、その上に載置された発光素子も載置した場所からずれるように移動するため、本実施の形態のダイパッド部は発光素子の底部と略同じ大きさに形成される。このようにすることにより、溶融されたダイボンド部材の表面張力によるセルフアライメントを確保することができ、ダイパッド部102の外形が形作る辺と平面視における発光素子の各辺(言い換えれば、発光素子の側面)を略平行に配置することができる。   As described above, since the die bonding member spreads so that the light emitting element placed thereon moves away from the place where the die bonding member is placed, the die pad portion of the present embodiment is substantially the same size as the bottom portion of the light emitting element. Formed. By doing so, self-alignment due to the surface tension of the melted die bond member can be ensured, and the side formed by the outer shape of the die pad portion 102 and each side of the light emitting element in plan view (in other words, the side surface of the light emitting element) ) Can be arranged substantially in parallel.

このとき、前述のように、溶融されたダイボンド部材は第1の金属部材に沿って広がるため、発光素子の直下、すなわちダイパッド部102にのみダイボンド部材を塗着したとしても、ダイパッド部102のみならず、突出部101にまで、溶融されたダイボンド部材が広がることとなる。ダイボンド部材は適宜量塗着されるため、量が少ない場合においては、突出部101が形成されていたとしても、ダイボンド部材が溶融して凝固された後、発光素子の直下であるダイパッド部102にのみ配置される。しかしながら、ダイボンド部材の塗着量のばらつきでダイボンド部材が多めに塗着された場合には、発光素子の周辺部であるワイヤボンド部にまでダイボンド部材が広がったり、周りこんだりするため、そのような場合には量産性が低下し、好ましくない。本実施の形態においては、ダイボンド部材の広がりや回り込みが発生する場所は、突出部101になるように管理することができるため、たとえダイボンド部材が広がったとしても、ワイヤボンドの妨げとならない位置に導くことができる。   At this time, as described above, since the melted die bond member spreads along the first metal member, even if the die bond member is applied directly below the light emitting element, that is, only to the die pad portion 102, only the die pad portion 102 is applied. Instead, the melted die bond member spreads to the protruding portion 101. Since the die bond member is applied in an appropriate amount, when the amount is small, even if the protrusion 101 is formed, after the die bond member is melted and solidified, it is applied to the die pad portion 102 immediately below the light emitting element. Only placed. However, when a large amount of die bond members are applied due to variations in the amount of die bond member applied, the die bond member spreads or swells to the wire bond portion that is the peripheral portion of the light emitting element. In such a case, mass productivity decreases, which is not preferable. In the present embodiment, the location where the die bond member spreads and wraps around can be managed so as to be the protruding portion 101, so even if the die bond member spreads out, it does not interfere with the wire bond. Can lead.

また、この場合に、突出部101にダイボンド部材が溶融されて固定されると、図3に示すように、突出部101に形成されたダイボンド部材のフィレット109が形成される。フィレット109が形成されると、発光素子105と支持体107上の第1の金属部材とが固定されていることを外部から確認することができるため、好ましい。さらに、近年の発光素子の出力の向上により、発光素子から発せられる熱量も多くなってきているが、フィレット109を形成することにより、該フィレットから熱を逃がすことができ、放熱性を向上させることができる。   Further, in this case, when the die bond member is melted and fixed to the protrusion 101, a fillet 109 of the die bond member formed on the protrusion 101 is formed as shown in FIG. When the fillet 109 is formed, it can be confirmed from the outside that the light emitting element 105 and the first metal member on the support 107 are fixed, which is preferable. Furthermore, the amount of heat generated from the light emitting element has been increased due to the recent improvement in the output of the light emitting element. However, by forming the fillet 109, heat can be released from the fillet and heat dissipation can be improved. Can do.

突出部101は、ダイパッド部102の外形が形作る辺から突出するように形成される。第1の金属部材全体として、溶融されたダイボンド部材の表面張力によるセルフアライメントを確保することができる程度である必要があるため、ダイパッド部102の外形が形作る辺の少なくとも1辺は、略直線である。(言い換えると、突出部が形成されない。)ただし、本実施の形態において、ワイヤボンドの妨げとならないような、実質上に直線と言える程度の微細な突出はあってもよいものとする。また、本実施の形態において、突出部101の突出する方向と、ワイヤ106の接続方向とは、略垂直である。   The protruding portion 101 is formed so as to protrude from the side formed by the outer shape of the die pad portion 102. Since it is necessary that the first metal member as a whole can ensure self-alignment due to the surface tension of the melted die bond member, at least one side formed by the outer shape of the die pad portion 102 is substantially straight. is there. (In other words, the protruding portion is not formed.) However, in this embodiment, there may be a minute protrusion that can be said to be a substantially straight line so as not to hinder wire bonding. Further, in the present embodiment, the protruding direction of the protruding portion 101 and the connecting direction of the wire 106 are substantially perpendicular.

突出部の形状としては、例えば、図2Aに示されるようにダイパッド部102の外形が形作る辺のうちの対向する2辺に対称に略正方形で設けられてもよいし、図2Bに示されるように、長方形のダイパッド部102の中心に対して点対称に設けられていてもよいし、図2Cに示されるように略半円の形状で形成されていてもよい。図2A乃至Cに示すように、ダイパッド部102の外形が形作る辺のうち、半数の辺には、突出部が形成されないようにすると、セルフアライメント効果をより効かせることができる。   As the shape of the protruding portion, for example, as shown in FIG. 2A, it may be provided in a substantially square shape symmetrically on two opposite sides of the sides formed by the outer shape of the die pad portion 102, or as shown in FIG. 2B. Further, it may be provided point-symmetrically with respect to the center of the rectangular die pad portion 102, or may be formed in a substantially semicircular shape as shown in FIG. 2C. As shown in FIGS. 2A to 2C, the self-alignment effect can be more effective by preventing protrusions from being formed on half of the sides formed by the outer shape of the die pad portion 102.

このように形成することにより、突出部が形成されない辺には、ダイボンド部材の広がりや回り込みがないため、この辺の上部を跨ぐようにワイヤ106を第2の金属部材104と接続することにより、ワイヤの接合不良のおそれを回避することができる。   By forming in this way, there is no spread or wraparound of the die bond member on the side where the protruding portion is not formed. Therefore, by connecting the wire 106 to the second metal member 104 so as to straddle the upper part of this side, the wire The possibility of poor bonding can be avoided.

また、ダイパッド部と第2の金属部材とのクリアランス(間隔のゆとり)を小さくすることができることから、パッケージの小型化が可能となる。   In addition, since the clearance between the die pad portion and the second metal member can be reduced, the package can be reduced in size.

この発光装置においては、前記金属膜はAg、Rh、Auの積層膜を有すると好ましい。そのような積層膜にすると、Ag金属膜の上に形成されるRh膜がダイボンド部材の拡散を防止するバリア層となり、Auが半田に濡れる膜としての役目を果たすためである。   In this light emitting device, the metal film preferably has a laminated film of Ag, Rh, and Au. In such a laminated film, the Rh film formed on the Ag metal film serves as a barrier layer for preventing diffusion of the die bond member, and Au serves as a film that wets the solder.

また、ダイボンド部材はAuSn系であれば、融点が低く、接合強度が高いことから好ましい。   Further, if the die bond member is AuSn, it is preferable because the melting point is low and the bonding strength is high.

さらに、支持体107は、発光素子105を実装した状態で基板に実装可能なサブマウントであれば、放熱性を向上させることができ、好ましい。   Further, it is preferable that the support 107 be a submount that can be mounted on a substrate in a state where the light emitting element 105 is mounted, because heat dissipation can be improved.

このようにして形成された発光素子が搭載された支持体を用いて、本発明の発光装置が形成される。   The light-emitting device of the present invention is formed using the support on which the light-emitting element thus formed is mounted.

以下に、発光装置の各構成部材について詳述する。
(発光素子105)
発光素子は、半導体発光素子であればよく、いわゆる発光ダイオードと呼ばれる素子であればどのようなものでもよい。
Below, each structural member of a light-emitting device is explained in full detail.
(Light emitting element 105)
The light emitting element may be a semiconductor light emitting element, and any element may be used as long as it is an element called a light emitting diode.

発光素子は、多角形又はこれに近い形状であり、特に、四角形、矩形、正方形又はこれらに近似する形状であることがより好ましい。   The light-emitting element has a polygonal shape or a shape close thereto, and more preferably a quadrangle, a rectangle, a square, or a shape similar to these.

このような発光素子は、基板に対して同じ側に正電極及び負電極が形成された片面電極のものであってもよいし、正電極又は負電極が、基板の裏面に形成された両面電極のものであってもよい。   Such a light emitting device may be a single-sided electrode in which a positive electrode and a negative electrode are formed on the same side with respect to the substrate, or a double-sided electrode in which the positive electrode or the negative electrode is formed on the back surface of the substrate. It may be.

(金属膜)
発光素子の底部(発光素子のダイボンド面)には、全面又は一部において、金属膜が形成されている。特に、金属膜が多角形であるか、発光素子の裏面全面に形成されていることが好ましい。これにより、発光素子側の濡れ性が高まるため、セルフアライメント効果を効率的に発揮させることができる。金属膜は、発光素子から発せられる光に対して70%以上、さらに80%以上の反射率を有することが好ましい。この金属膜は、基板の裏面に電極が形成されている場合には、その電極上に形成されることが好ましいが、電極及び/又は金属膜が、両機能を兼ね備えていてもよい。
(Metal film)
A metal film is formed on the entire bottom surface of the light emitting element (die bonding surface of the light emitting element). In particular, the metal film is preferably polygonal or formed on the entire back surface of the light emitting element. Thereby, since the wettability on the light emitting element side is increased, the self-alignment effect can be efficiently exhibited. The metal film preferably has a reflectance of 70% or more, more preferably 80% or more, with respect to light emitted from the light emitting element. When the electrode is formed on the back surface of the substrate, the metal film is preferably formed on the electrode. However, the electrode and / or the metal film may have both functions.

金属膜は、例えば、Al、Ag、Au、Pd等の単層膜又は積層膜により形成すること
ができる。金属膜の成膜方法は、公知の方法、例えば、蒸着、スパッタ法、メッキ法等、種々の方法を利用することができる。
The metal film can be formed of, for example, a single layer film or a laminated film such as Al, Ag, Au, and Pd. As a method for forming the metal film, various known methods such as vapor deposition, sputtering, and plating can be used.

なお、金属膜の表面(つまり、ダイボンド側の表面)には、後述するダイボンド部材の拡散を防止するバリア層が形成されていることが好ましい。バリア層は、例えば、Mo、W、Rh等の高融点金属の単層膜又は積層膜により形成することができる。バリア層の成膜方法は、公知の方法、例えば、蒸着、スパッタ法、メッキ法等、種々の方法を利用することができる。   In addition, it is preferable that the barrier layer which prevents the spreading | diffusion of the die-bonding member mentioned later is formed in the surface (namely, surface on the die-bonding side) of a metal film. The barrier layer can be formed of, for example, a single-layer film or a laminated film of a refractory metal such as Mo, W, or Rh. As a method for forming the barrier layer, various known methods such as vapor deposition, sputtering, and plating can be used.

(第1の金属部材103および第2の金属部材104)
第1の金属部材103および第2の金属部材104の材料は限定されないが、発光素子からの発光を有効に利用するため、発光素子から発せられる光に対して、例えば、70%程度以上、好ましくは80%程度以上、85%程度以上、90%程度以上の反射率を有するものが適している。第1の金属部材と第2の金属部材が同一の材料であってもよいし、異なる材料であってもよい。例えば、第1の金属部材を発光素子の底面の金属膜との接合性のよい材料で形成し、第2の金属部材をワイヤとの接合性の良い材料で形成するなど、適宜変更できる。
(First metal member 103 and second metal member 104)
The materials of the first metal member 103 and the second metal member 104 are not limited. However, in order to effectively use the light emitted from the light emitting element, for example, about 70% or more with respect to the light emitted from the light emitting element, preferably A material having a reflectivity of about 80% or more, about 85% or more, or about 90% or more is suitable. The first metal member and the second metal member may be the same material or different materials. For example, the first metal member can be appropriately formed by forming the material with a good bondability with the metal film on the bottom surface of the light emitting element, and the second metal member with a material having a good bondability with the wire.

特に、第1の金属部材は、セルフアライメント効果を得るため、ダイボンド部材との接触角が90°程度以下、80°程度以下、60°程度以下、さらに45°程度以下の材料であることが好ましい。なお、この明細書において、接触角は、接合材料の融点+40〜50℃における静滴法によって測定した(「溶融マグネシウムによる黒鉛のぬれ」、「軽金属」第55巻、第7号(2005)p310−314参照)値を指す。   In particular, in order to obtain a self-alignment effect, the first metal member is preferably a material having a contact angle with the die bond member of about 90 ° or less, about 80 ° or less, about 60 ° or less, and further about 45 ° or less. . In this specification, the contact angle was measured by a sessile drop method at a melting point of the bonding material +40 to 50 ° C. (“Wetting of graphite by molten magnesium”, “Light metal” Vol. 55, No. 7 (2005) p310). -314) refers to the value.

また、エッチング加工等が容易な材料が好ましい。例えば、Al、Ag、Au、Pd等の単層膜又は積層膜により形成することができる。金属部材を基板上に膜状に形成する場合には、公知の方法、例えば、蒸着、スパッタ法、メッキ法等、種々の方法を利用することができる。   A material that can be easily etched is preferable. For example, it can be formed of a single layer film or a laminated film of Al, Ag, Au, Pd or the like. When the metal member is formed in a film shape on the substrate, various known methods such as vapor deposition, sputtering, plating, etc. can be used.

(ダイボンド部材108)
ダイボンド部材は、例えば、SnPb系、SnAgCu系、AuSn系、SnZn系、SuCu系等の材料を好適に使用することができる。なかでも、AuSn系共晶が好ましい。また、任意に、これらに、濡れ性又はハンダクラック性を改善する目的で、Bi、In等を添加してもよい。
(Die bond member 108)
As the die bond member, for example, a SnPb-based material, a SnAgCu-based material, an AuSn-based material, a SnZn-based material, a SuCu-based material, or the like can be preferably used. Among these, AuSn eutectic is preferable. Optionally, Bi, In or the like may be added to these for the purpose of improving wettability or solder cracking property.

(ワイヤ106)
ワイヤ106としては、例えば、金線、銅線、白金線、アルミニウム線等の金属およびそれらの合金からなるワイヤを用いることができる。
(Wire 106)
As the wire 106, for example, a wire made of a metal such as a gold wire, a copper wire, a platinum wire, an aluminum wire, or an alloy thereof can be used.

(支持体)
支持体には、第1の金属部材および第2の金属部材が配置される。支持体は、それ自体が発光装置の実装基板等に実装される、いわゆるパッケージ基板であってもよいし、パッケージ基板に搭載されるサブマウントであってもよい。
(Support)
A 1st metal member and a 2nd metal member are arrange | positioned at a support body. The support itself may be a so-called package substrate mounted on a mounting substrate or the like of the light emitting device, or may be a submount mounted on the package substrate.

材料としては、絶縁性を確保するために適切な材料で形成されていることが好ましい。具体的には、Al23、AlN等のセラミック、高融点ナイロン等のプラスチック、ガラス等が挙げられる。なかでも、ダイボンド部材との接触角が90°を超える材料であることが適しており、さらに、100°、105°、110°以上の材料であることがより好ましい。このような材料を選択することにより、発光素子のダイボンディング時におけるダイボンド部材のアライメント効果をより顕著に発現させることができる。 The material is preferably made of an appropriate material in order to ensure insulation. Specific examples include ceramics such as Al 2 O 3 and AlN, plastics such as high melting point nylon, and glass. Especially, it is suitable for the material that a contact angle with a die-bonding member exceeds 90 degrees, and it is more preferable that it is a material more than 100 degrees, 105 degrees, and 110 degrees. By selecting such a material, the alignment effect of the die bonding member at the time of die bonding of the light emitting element can be more remarkably exhibited.

また、発光素子と熱膨張係数がほぼ等しいもの、例えば、窒化物半導体発光素子に対してAlNが好ましい。このような材料を使用することにより、支持体と発光素子との間に発生する熱応力の影響を緩和することができる。   In addition, AlN is preferable for a light emitting element having a coefficient of thermal expansion substantially equal to the light emitting element, for example, a nitride semiconductor light emitting element. By using such a material, the influence of thermal stress generated between the support and the light emitting element can be reduced.

(その他の部材)
(封止部材)
発光素子を封止するために、封止部材が形成されていてもよい。封止部材は、上述した発光素子を、好ましくは一体的に又は塊状に封止し、発光素子に対して、絶縁性を確保することができるものであれば、どのような材料によって形成されていてもよい。例えば、YAG:Ce蛍光物質や、特開2005−19646号公報、特開2005−8844号公報等に記載の公知の蛍光物質のいずれをも用いることができる。
(Other parts)
(Sealing member)
In order to seal the light emitting element, a sealing member may be formed. The sealing member is formed of any material as long as it can seal the above-described light-emitting element, preferably integrally or in a lump, and can ensure insulation against the light-emitting element. May be. For example, any of YAG: Ce fluorescent substances and known fluorescent substances described in JP-A-2005-19646, JP-A-2005-8844 and the like can be used.

(その他の部品)
本発明の発光装置は、発光装置の一部として又は封止部材表面に付属するように、例えば、発光素子の光の出射部(例えば、発光素子の上方)に、発光部およびワイヤ保護のためのカバーや、光学レンズ等が備えられていてもよい。このとき、これらのカバーやレンズを接着剤等を介して接合する際に接合箇所が金属の導電パターンである場合、部分的にパッケージ基板を露出させたり、導電パターン上にさらに絶縁の層(たとえば、AlN層)を設けることにより、金属の導電パターンに直接接合する場合と比べて強固に接合することが可能になる。
(Other parts)
The light emitting device of the present invention is provided as a part of the light emitting device or attached to the surface of the sealing member, for example, on the light emitting portion of the light emitting element (for example, above the light emitting element) for protecting the light emitting portion and the wire. A cover, an optical lens, or the like may be provided. At this time, when the bonding portion is a metal conductive pattern when these covers and lenses are bonded via an adhesive or the like, the package substrate is partially exposed or an insulating layer (for example, on the conductive pattern (for example, By providing an AlN layer, it is possible to bond firmly compared to the case of directly bonding to a metal conductive pattern.

また、発光素子からの光の取り出しを効率的に行うために、反射部材、反射防止部材、光拡散部材等、種々の部品が備えられていてもよい。また、静電耐圧向上のための保護素子が備えられていてもよい。   In order to efficiently extract light from the light emitting element, various components such as a reflection member, an antireflection member, and a light diffusion member may be provided. Further, a protective element for improving electrostatic withstand voltage may be provided.

また、本発明の発光装置は、底面と、発光素子を取り囲む壁部を有するパッケージの凹部内に発光素子や封止樹脂が配置される、表面実装型(SMD)の発光装置として形成されていてもよい。パッケージは、発光素子、封止樹脂等を保護することができるものであれば、どのような材料によって形成されていてもよい。なかでも、セラミック、乳白色の樹脂など、絶縁性および遮光性を有する材料であることが好ましい。また、パッケージは、発光素子等から生じた熱の影響を受けた場合の封止樹脂等との密着性等を考慮して、これらとの熱膨張係数の差が小さいものを選択することが好ましい。パッケージの底面および壁部は、支持体及び金属部材と連続した材料であってもよく、電気的接続または放熱経路を形成するため、金属部材の一部が露出していてもよい。パッケージ内側には発光素子からの光を反射する反射材料が設けられていてもよく、集光のためにリフレクタ形状に形成されていてもよい。   The light-emitting device of the present invention is formed as a surface-mount (SMD) light-emitting device in which a light-emitting element and a sealing resin are disposed in a recess of a package having a bottom surface and a wall portion surrounding the light-emitting element. Also good. The package may be formed of any material as long as it can protect the light emitting element, the sealing resin, and the like. Especially, it is preferable that it is a material which has insulation and light-shielding properties, such as a ceramic and milky white resin. Further, it is preferable to select a package having a small difference in thermal expansion coefficient with respect to the sealing resin or the like when affected by the heat generated from the light emitting element or the like. . The bottom surface and the wall of the package may be made of a material that is continuous with the support and the metal member, and a part of the metal member may be exposed to form an electrical connection or a heat dissipation path. A reflective material that reflects light from the light emitting element may be provided inside the package, or may be formed in a reflector shape for condensing light.

以下に、本発明の発光装置の実施例を図面に基づいて詳細に説明する。   Embodiments of the light emitting device according to the present invention will be described below in detail with reference to the drawings.

実施例1
この実施例の発光装置500は、図5に示したように、AlNからなるパッケージ基板511と、該パッケージ基板にAgペーストを介して載置されたAlNからなるサブマウント(支持体)507と、同じくAgペーストを介して搭置された保護素子512とを備え、パッケージ基板511の電極513、514と、サブマウント507の電極とをAuワイヤ515、516により接続して形成される。
Example 1
As shown in FIG. 5, the light emitting device 500 of this embodiment includes a package substrate 511 made of AlN, a submount (support) 507 made of AlN placed on the package substrate via Ag paste, Similarly, a protective element 512 mounted via Ag paste is provided, and the electrodes 513 and 514 of the package substrate 511 and the electrodes of the submount 507 are connected by Au wires 515 and 516.

図6は本実施例のサブマウント507を上面から見た図である。サブマウント507のダイパッド部には発光素子505が載置されており、ダイパッド部から突出するように突出部501が形成され、突出部501が形成された辺と異なる辺を跨ぐようにワイヤ506が発光素子505の電極と第2の金属部材504とを接続している。   FIG. 6 is a view of the submount 507 of this embodiment as viewed from above. A light emitting element 505 is mounted on the die pad portion of the submount 507, a protrusion 501 is formed so as to protrude from the die pad portion, and a wire 506 is straddled across a side different from the side where the protrusion 501 is formed. The electrode of the light emitting element 505 and the second metal member 504 are connected.

この発光装置は、以下のようにして製造することができる。   This light emitting device can be manufactured as follows.

まず、長さ1,000μm、幅1,000μmの正方形の発光素子505を準備する。この発光素子は、青色系に発光する窒化物系半導体からなり、波長455nm付近の光を放射する。発光素子の表面には、正および負の電極がそれぞれ3つずつ形成されている。また、底面には、Ag金属膜、半田材料の拡散を防止するRhバリア膜、半田に濡れるAu膜がスパッタ法により、全面に、この順で積層されている。   First, a square light emitting element 505 having a length of 1,000 μm and a width of 1,000 μm is prepared. This light emitting element is made of a nitride semiconductor that emits blue light, and emits light having a wavelength of about 455 nm. Three positive and three negative electrodes are formed on the surface of the light emitting element. On the bottom surface, an Ag metal film, an Rh barrier film for preventing diffusion of the solder material, and an Au film that gets wet with the solder are laminated in this order on the entire surface by sputtering.

次いで、サブマウントとして、長さ1.9mm、幅4.9mm、厚さ1.0mmのAlN基板を準備する。このサブマウントの上面に、スパッタ法により、Ti(1,000Å)/Pt(2,000Å)/Ag(10,000Å)膜を積層して、第1の金属部材および第2の金属部材504を形成する。このとき、サブマウントに印刷等で封止部材を配置させる際に、基準点として用いられる凸形状のアライメントマーク510を同時に形成している。   Next, an AlN substrate having a length of 1.9 mm, a width of 4.9 mm, and a thickness of 1.0 mm is prepared as a submount. A Ti (1,000 Å) / Pt (2,000 Å) / Ag (10,000 Å) film is laminated on the upper surface of this submount by sputtering to form a first metal member and a second metal member 504. Form. At this time, when the sealing member is arranged on the submount by printing or the like, a convex alignment mark 510 used as a reference point is simultaneously formed.

続いて、ダイパッド部にダイボンド部材として、Auが78wt%、Au−Su粒子とフラックスからなるペーストを適量塗布し、その上に発光素子505を載置し、仮固定する。   Subsequently, an appropriate amount of paste made of 78 wt% Au, Au—Su particles and flux is applied as a die bond member to the die pad portion, and the light emitting element 505 is placed thereon and temporarily fixed.

その後、発光素子をダイパッド部に高精度にアライメントするために、発光素子505が仮固定されたサブマウント507を、315℃のリフロー炉に通して、ペースト溶剤であるフラックスを揮発させ、Au−Snを溶融し、さらに凝固させて、第1の金属部材のダイパット部に接着融接合させる。   Thereafter, in order to align the light emitting element with the die pad portion with high accuracy, the submount 507 on which the light emitting element 505 is temporarily fixed is passed through a reflow furnace at 315 ° C., and the flux as the paste solvent is volatilized. Is melted and further solidified, and adhesively bonded to the die pad portion of the first metal member.

その後、準水系洗浄剤にてフラックスを洗浄する。   Thereafter, the flux is washed with a semi-aqueous detergent.

次に、発光素子上面の正および負の電極と、第2の金属部材504とをAuワイヤで接続する。   Next, the positive and negative electrodes on the upper surface of the light emitting element and the second metal member 504 are connected by Au wires.

続いて、透光性封止部材518として、蛍光物質が含有されたシリコーン樹脂を、発光素子505の主光取り出し面と側面とに形成する。   Subsequently, as the light-transmitting sealing member 518, a silicone resin containing a fluorescent material is formed on the main light extraction surface and the side surface of the light-emitting element 505.

次にパッケージ基板611の作成方法について説明する。   Next, a method for producing the package substrate 611 will be described.

長さ14.0mm、幅9.0mm、厚さ1.0mmのAlN基板を準備する。この基板の上面に、印刷法により、W膜を形成し、そのW膜を焼結させた後、Ni−B/Ni−P/Auメッキを施すことにより、導電パターンであるパッケージ基板511の電極513、514を形成する。   An AlN substrate having a length of 14.0 mm, a width of 9.0 mm, and a thickness of 1.0 mm is prepared. A W film is formed on the upper surface of the substrate by a printing method, the W film is sintered, and then Ni—B / Ni—P / Au plating is performed, whereby an electrode of the package substrate 511 which is a conductive pattern. 513 and 514 are formed.

このようにして得られたパッケージ基板611とサブマウント507とをAgペーストにより接着し、互いの電極をAuワイヤ615、616で接続し、導通する。また、パッケージ基板611の導電パターンには、静電耐圧向上のための保護素子612がAgペーストで接着され、Auワイヤ517により発光素子505と逆並列になるように接続される。   The package substrate 611 and the submount 507 obtained in this way are bonded by Ag paste, and the electrodes are connected by Au wires 615 and 616 to conduct. In addition, a protective element 612 for improving electrostatic withstand voltage is bonded to the conductive pattern of the package substrate 611 with Ag paste, and connected to the light emitting element 505 in reverse parallel with an Au wire 517.

このようにして形成された発光装置500は、発光素子505が載置されたサブマウント507のダイパッド部から突出するように突出部501が形成され、突出部501が形成された辺と異なる辺を跨ぐようにワイヤ506が発光素子505の電極と第2の金属部材504とを接続していることにより、ダイパッド部に発光素子を正確に配置しつつ、ワイヤボンディング部へのダイボンディング剤の広がりや回りこみを抑制し、ワイヤの接合不良という問題を解決することができる。その結果、小型で高信頼性の発光装置とすることができる。   The light emitting device 500 thus formed has a protruding portion 501 that protrudes from the die pad portion of the submount 507 on which the light emitting element 505 is mounted, and has a side that is different from the side on which the protruding portion 501 is formed. The wire 506 connects the electrode of the light emitting element 505 and the second metal member 504 so as to straddle, so that the die bonding agent spreads to the wire bonding portion while accurately arranging the light emitting element on the die pad portion. The wraparound can be suppressed and the problem of wire bonding failure can be solved. As a result, a small and highly reliable light-emitting device can be obtained.

実施例2
この実施例の発光装置700は、図7に示したように、実施例1の発光装置に、さらに発光部およびワイヤ保護のための樹脂カバー719を備えたものである。
Example 2
As shown in FIG. 7, the light-emitting device 700 of this example is a light-emitting device of Example 1, further comprising a resin cover 719 for protecting the light-emitting portion and the wires.

照明用光源、各種インジケーター用光源、車載用光源、ディスプレイ用光源、液晶のバックライト用光源、信号機、車載部品、看板用チャンネルレターなど、種々の光源に使用することができる。   It can be used for various light sources such as illumination light sources, various indicator light sources, in-vehicle light sources, display light sources, liquid crystal backlight light sources, traffic lights, in-vehicle components, and signboard channel letters.

本発明の発光装置における要部の概略平面図である。It is a schematic plan view of the principal part in the light-emitting device of this invention. 本発明の発光装置における1の金属部材を説明するための平面図である。It is a top view for demonstrating the 1 metal member in the light-emitting device of this invention. 本発明の発光装置における要部を説明するための図である。It is a figure for demonstrating the principal part in the light-emitting device of this invention. 本発明の発光装置の要部の斜視図である。It is a perspective view of the principal part of the light-emitting device of this invention. 本発明の発光装置の斜視図である。It is a perspective view of the light emitting device of the present invention. 本発明の発光装置における要部の概略上面図である。It is a schematic top view of the principal part in the light-emitting device of this invention. 本発明の発光装置の斜視図である。It is a perspective view of the light emitting device of the present invention.

符号の説明Explanation of symbols

101、501 突出部
102 ダイパッド部
103 第1の金属部材
104、504 第2の金属部材
105、505 発光素子
106、506、515、516、517 ワイヤ
107 支持体
108 ダイボンド部材
109 フィレット
500、700 発光装置
507 サブマウント
510 アライメントマーク
511 パッケージ基板
512 保護素子
513、514 導電パターン
518 封止樹脂
719 カバー
DESCRIPTION OF SYMBOLS 101,501 Protrusion part 102 Die pad part 103 1st metal member 104,504 2nd metal member 105,505 Light emitting element 106,506,515,516,517 Wire 107 Support body 108 Die bond member 109 Fillet 500,700 Light emitting device 507 Submount 510 Alignment mark 511 Package substrate 512 Protection element 513, 514 Conductive pattern 518 Sealing resin 719 Cover

Claims (4)

底部に金属膜が形成された発光素子と、
前記発光素子が載置され、該発光素子の下部に配置された第1の金属部材と、
前記第1の金属部材と前記発光素子の金属膜とを接着する金属からなるダイボンド部材と、
前記発光素子の電極とワイヤにより接続される少なくとも1つの第2の金属部材と、
前記第1の金属部材および前記第2の金属部材が配置される支持体を有し、
前記第1の金属部材は、平面視において、前記発光素子の底面と略同じ大きさに形成された多角形のダイパッド部と、前記ダイパッド部の外形が形作る辺から突出した突出部とを有し、
前記ワイヤが跨ぐ辺は直線であり、
前記突出部の突出する方向と前記ワイヤの接続方向とは、略垂直であることを特徴とする発光装置。
A light emitting device having a metal film formed on the bottom;
A first metal member on which the light emitting element is mounted and disposed under the light emitting element;
A die bond member made of a metal that bonds the first metal member and the metal film of the light emitting element;
At least one second metal member connected to the electrode of the light emitting element by a wire;
A support body on which the first metal member and the second metal member are disposed;
The first metal member has a polygonal die pad portion formed in substantially the same size as the bottom surface of the light emitting element in a plan view, and a protruding portion protruding from a side formed by the outer shape of the die pad portion. ,
The side that the wire straddles is a straight line ,
The light emitting device according to claim 1, wherein a protruding direction of the protruding portion and a connecting direction of the wires are substantially perpendicular.
前記金属膜はAg、Rh、Auの積層膜を有する請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the metal film has a laminated film of Ag, Rh, and Au. 前記ダイボンド部材はAuSn系である請求項1または請求項2に記載の発光装置。   The light emitting device according to claim 1, wherein the die bond member is AuSn-based. 前記支持体は、前記発光素子を実装した状態で基板に実装可能なサブマウントである請求項1乃至請求項3に記載の発光装置。   The light emitting device according to claim 1, wherein the support is a submount that can be mounted on a substrate in a state where the light emitting element is mounted.
JP2007241829A 2007-09-19 2007-09-19 Light emitting device Active JP5082710B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007241829A JP5082710B2 (en) 2007-09-19 2007-09-19 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007241829A JP5082710B2 (en) 2007-09-19 2007-09-19 Light emitting device

Publications (2)

Publication Number Publication Date
JP2009076524A JP2009076524A (en) 2009-04-09
JP5082710B2 true JP5082710B2 (en) 2012-11-28

Family

ID=40611255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007241829A Active JP5082710B2 (en) 2007-09-19 2007-09-19 Light emitting device

Country Status (1)

Country Link
JP (1) JP5082710B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
JP5640632B2 (en) * 2010-03-12 2014-12-17 旭硝子株式会社 Light emitting device
US9093621B2 (en) 2011-12-28 2015-07-28 Nichia Corporation Molded package for light emitting device
JP6191308B2 (en) * 2012-07-27 2017-09-06 日亜化学工業株式会社 Light emitting device for line light source
JP6487626B2 (en) * 2014-03-24 2019-03-20 スタンレー電気株式会社 Semiconductor device
CN103904207A (en) * 2014-04-04 2014-07-02 利亚德光电股份有限公司 Wafer circuit
JP6572757B2 (en) 2015-11-30 2019-09-11 日亜化学工業株式会社 Light emitting device
JP7064324B2 (en) 2017-12-18 2022-05-10 スタンレー電気株式会社 A semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device using the semiconductor light emitting device.
JP7064325B2 (en) 2017-12-18 2022-05-10 スタンレー電気株式会社 A semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device using the semiconductor light emitting device.
JP6970365B2 (en) * 2019-04-26 2021-11-24 日亜化学工業株式会社 Light guide assembly board and composite board
JP6809556B2 (en) 2019-04-26 2021-01-06 日亜化学工業株式会社 Manufacturing method of light guide assembly substrate and integrated light emitting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999007023A1 (en) * 1997-07-29 1999-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelectronic component
JP3924481B2 (en) * 2002-03-08 2007-06-06 ローム株式会社 Semiconductor device using semiconductor chip
JP4976673B2 (en) * 2005-09-13 2012-07-18 ローム株式会社 Semiconductor device, substrate, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2009076524A (en) 2009-04-09

Similar Documents

Publication Publication Date Title
JP5082710B2 (en) Light emitting device
US10636945B2 (en) Method of manufacturing light emitting device including metal patterns and cut-out section
US8450764B2 (en) Semiconductor light-emitting apparatus and method of fabricating the same
JP4935514B2 (en) Light emitting device
JP4857938B2 (en) Light emitting device
TW201547062A (en) Light emitting device
US10411178B2 (en) Light emitting device
US20150280093A1 (en) Light emitting device, method for manufacturing same, and body having light emitting device mounted thereon
JP5125060B2 (en) Light emitting device
JP5055837B2 (en) Light emitting device
JP6669208B2 (en) Light emitting device
JP2006279080A (en) Fixing method for light emitting element wafer
JP6010891B2 (en) Semiconductor device
JP5880025B2 (en) Light emitting device
JP5509623B2 (en) Light emitting device
JP5849691B2 (en) Mounting method of light emitting element
JP2005123657A (en) Chip-type light emitting device and its manufacturing method
JP2020092251A (en) Light-emitting device and manufacturing method thereof
JP7545030B2 (en) Light emitting device and light source device
JP7181489B2 (en) Light emitting device and manufacturing method thereof
JP2020065001A (en) Light-emitting device
JP7014955B2 (en) Manufacturing method of semiconductor device
JP2017216368A (en) Light-emitting device
JP2023003561A (en) Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device
JP2008270728A (en) Light emitting device and lighting device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100817

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120712

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120807

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120820

R150 Certificate of patent or registration of utility model

Ref document number: 5082710

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150914

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150914

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250