JP6010891B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which a semiconductor element such as a light emitting element or a protection element is mounted on a mounting substrate.

  Conventionally, a surface-mount type semiconductor device in which a light-emitting element such as a light-emitting diode (LED) or a laser diode (LD) is mounted on a substrate is known. This semiconductor device is used in lighting fixtures, display screen backlights, in-vehicle light sources, display light sources, moving picture illumination auxiliary light sources, and other general consumer light sources, and has a longer life than conventional light sources. Therefore, it is expected to be a light source for next-generation illumination because it can emit light with energy saving.

  In the semiconductor device as described above, a light emitting element having a positive electrode and a negative electrode on the same surface side is used as a light emitting element, and a structure in which flip chip mounting is performed on an insulating substrate on which a wiring pattern is formed. It has been proposed (see, for example, Patent Document 1). In Patent Document 1, in order to establish electrical continuity between the light emitting element and the outside, the electrode on the upper surface side and the electrode on the lower surface side of the insulating substrate are electrically connected through a through hole filled with a conductive material. ing.

  In recent years, there has been a demand for higher output of such semiconductor devices, and measures such as increasing the size of light emitting elements (increasing the area) and mounting a plurality of light emitting elements have been made. However, the amount of heat generated from the light emitting element is increased accordingly, and means for efficiently radiating heat is required. Therefore, for example, a method for improving heat dissipation by providing a metal heat sink in a package is generally known (see, for example, Patent Document 2). In Patent Document 2, a package electrode is provided so as to avoid a metal heat sink.

JP 2004-319939 A JP 2008-160032 A

  2. Description of the Related Art In a semiconductor device in which a semiconductor element is flip-chip mounted, a structure in which a heat sink embedded in an insulating substrate is avoided when a through hole as described above is provided is generally known. However, such a structure places a limit on the design freedom of the package.

  In addition, the space for providing the through-holes as described above is limited due to the recent downsizing of the package and the increase in the size of the light emitting element or the multi-chip.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a semiconductor device that achieves both improvement in heat dissipation and securing of design freedom.

  In order to solve the above problems, a semiconductor device according to the present invention is provided with an insulating support substrate, a first upper surface electrode and a second upper surface electrode provided on an upper surface of the support substrate, and a lower surface of the support substrate. A mounting substrate having a bottom electrode, a heat sink embedded in the support substrate, a first electrode and a second electrode, and a semiconductor element mounted on at least the first top electrode; And a conductive material that is provided in the mounting substrate and connects the first upper surface electrode and the lower surface electrode, and the conductive material is connected to the heat sink. According to such a configuration, the degree of freedom in providing the conductive material for connecting the upper surface electrode and the lower surface electrode is ensured, and the heat generated from the semiconductor element can be transmitted to the heat sink without passing through the insulating support substrate or the like. It becomes possible and heat dissipation can be improved.

The semiconductor element has a second conductive semiconductor layer including the second electrode and a first conductive semiconductor layer including the first electrode in order on the translucent substrate, and the first electrode And the second electrode are provided on the same surface side, are flip-chip mounted on the mounting substrate, and the first electrode is connected to the first upper surface electrode. Thereby, heat dissipation can be improved.
It is preferable that the conductive material is provided directly below the first electrode of the semiconductor element. Thereby, since the 1st electrode provided on the laminated structure of a 1st conductivity type semiconductor layer and a 2nd conductivity type semiconductor layer is connected to the upper surface electrode with a high heat dissipation effect, heat dissipation can be improved.
Preferably, the semiconductor element has a conductive substrate, and the semiconductor element is connected to the first upper surface electrode so that the conductive substrate faces the first upper surface electrode. Thereby, since the conductive substrate in which the laminated structure of the first conductive type semiconductor layer and the second conductive type semiconductor layer is formed is connected to the upper surface electrode having a high heat dissipation effect, heat dissipation can be improved.
It is preferable that the conductive material penetrates the heat sink. Thereby, heat dissipation can be improved.
It is preferable that the conductive material is connected to the upper surface and the lower surface of the heat sink. As a result, a semiconductor device having a high degree of freedom in designing the mounting substrate and good heat dissipation can be obtained.
It is preferable that a plurality of the conductive material and the heat sink are provided corresponding to each of the first upper surface electrode and the second upper surface electrode. As a result, a semiconductor device having a high degree of freedom in designing the mounting substrate and good heat dissipation can be obtained.

  According to the present invention, it is possible to obtain a semiconductor device having good heat dissipation and ensuring a degree of freedom in designing a mounting substrate.

1 is a schematic cross-sectional view showing an example of a semiconductor device according to a first embodiment of the present invention. It is a schematic sectional drawing which shows an example of a semiconductor element. It is a schematic sectional drawing which shows an example of the semiconductor device which concerns on 2nd Embodiment of this invention. It is a schematic sectional drawing which shows an example of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a schematic sectional drawing which shows an example of the semiconductor device which concerns on 4th Embodiment of this invention. It is a schematic sectional drawing which shows an example of the semiconductor device which concerns on 5th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the form shown below illustrates the light-emitting device for actualizing the technical idea of this invention, Comprising: This invention is not limited to the following. Moreover, this specification does not specify the member shown by the claim as the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no specific description. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate.

<First Embodiment>
FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor device 100 according to the first embodiment of the present invention.

  A semiconductor device 100 according to this embodiment includes a semiconductor element 10 such as a light emitting diode or a laser diode having a pair of electrodes on the same surface side, and a mounting substrate 1 on which the semiconductor element 10 is placed.

  The mounting substrate 1 is configured by forming electrodes on an insulating support substrate 2. The support substrate 2 is configured by laminating a plurality of ceramic sheets, for example. As electrodes of the mounting substrate 1, a pair of first upper surface electrodes 4 a and second upper surface electrodes 4 b are provided on the upper surface of the support substrate 2, and a pair of first lower surface electrodes 5 a and second lower surface electrodes 5 b are disposed on the lower surface of the support substrate 2. Is provided. The support substrate 2 is provided with a first through hole 7a and a second through hole 7b in the thickness direction of the support substrate 2 from below the first upper surface electrode 4a and the second upper surface electrode 4b, respectively. A conductive material 6 is provided inside the first through hole 7a and the second through hole 7b. The first upper surface electrode 4a and the first lower surface electrode 5a, and the second upper surface electrode 4b and the second lower surface electrode 5b are Each is connected by a conductive material 6. The semiconductor element 10 is placed on the first upper surface electrode 4 a and the second upper surface electrode 4 b via the bonding member 8. The first lower surface electrode 5a and the second lower surface electrode 5b function as terminals that are electrically connected to the outside.

  A heat sink 3 is embedded in the support substrate 2 for the purpose of improving heat dissipation from the semiconductor element 10. The heat sink 3 is disposed under a region where the semiconductor element 10 is disposed. When viewed from above the semiconductor device 100, the heat sink 3 is preferably larger than the semiconductor element 10. Thereby, the heat generated by the semiconductor element 10 can be efficiently radiated.

  In the present embodiment, the conductive material 6 that connects one upper surface electrode and the lower surface electrode penetrates the heat sink 3. In FIG. 1, the conductive material 6 that connects the first upper surface electrode 4 a and the first lower surface electrode 5 a penetrates the heat sink 3. That is, the heat sink 3 has a through hole penetrating in the thickness direction of the heat sink 3 at a position overlapping with the first through hole 7a, and the conductive material 6 includes the first through hole 7a of the support substrate 2 and the heat sink 3. Are connected to the upper surface electrode and the lower surface electrode through the through hole. Further, in the through hole of the heat sink 3, the conductive material 6 that connects the first upper surface electrode 4 a and the first lower surface electrode 5 a is connected to the heat sink 3. Thereby, it becomes possible to transmit the heat | fever emitted from the semiconductor element 10 to the heat sink 3 via an electroconductive member, and can improve heat dissipation. The second through hole 7 b is provided at a position separated from the heat sink 3.

The semiconductor element 10 has the 2nd conductivity type semiconductor layer 14 and the 1st conductivity type semiconductor layer in order on the translucent board | substrate 11 (lower surface in FIG. 2). On the 2nd conductivity type semiconductor layer 14, it has the 2nd electrode 15b. Furthermore, a first electrode 15 a is provided on the first conductivity type semiconductor layer 12. The first electrode and the second electrode are provided on the same surface side (the lower surface side in FIG. 2), and the semiconductor element 10 is flip-chip mounted on the first upper surface electrode 4a and the second upper surface electrode 4b of the mounting substrate 1. Is done. In the flip chip mounting, the semiconductor element 10 and the first upper surface electrode 4a of the mounting substrate 1 are used by using a paste-like bonding member 8, a thin-film bonding member 8, or a bump-shaped bonding member 8 having conductivity such as solder. And the second upper surface electrode 4b are electrically connected. At this time, the first electrode 15a of the semiconductor element 10 is connected to the first upper surface electrode 4a connected to the heat sink 3 through the conductive material 6 among the first upper surface electrode 4a and the second upper surface electrode 4b of the mounting substrate 1. It is preferable that they are connected. Heat dissipation can be improved by connecting a top electrode having a high heat dissipation effect toward the first electrode 15a provided on the stacked structure of the first conductive semiconductor layer and the second conductive semiconductor layer.
Hereinafter, each component of the semiconductor device 100 according to the present embodiment will be described in detail.

(Semiconductor element 10)
As the semiconductor element, a light emitting element such as a light emitting diode or a laser diode, a protective element such as a Zener diode, or a control element having a control and adjustment function such as a power source can be used.

  In the case of a light emitting element, for example, a semiconductor layer in which a second conductive type semiconductor layer 14, a light emitting layer 13, and a first conductive type semiconductor layer 12 are formed in this order on a translucent substrate 11 is provided. A first electrode 15 a and a second electrode 15 b are provided on each of the type semiconductor layer 12 and the second conductivity type semiconductor layer 14. For example, an insulating light-transmitting substrate such as sapphire or spinel is preferably used as the material of the light-transmitting substrate for laminating the nitride semiconductor.

  The material of the first electrode and the second electrode is not limited as long as it is a conductive material. For example, any of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Ag, and Al Any of these metals or their alloys or combinations thereof can be used.

  Note that the light-emitting element is not limited to these structures, and may be formed using other semiconductor layer structures. Moreover, you may comprise so that a protective layer, a reflective layer, etc. may be provided suitably.

When the light emitting element emits white light, the outside of the light emitting element emitting blue light may be covered with a phosphor layer made of phosphor or a resin containing the phosphor. For example, for a light-emitting element emitting blue light, a YAG (yttrium, aluminum, garnet) phosphor activated with cerium emitting yellow light, or a silicate phosphor such as (Sr, Ba) ₂ SiO ₄ : Eu is combined. It can be set as the structure of white light emission. Note that there is no particular limitation on the color or structure of the light-emitting element as long as the light-emitting portion of the light-emitting element can emit light.

(Mounting board 1)
The mounting substrate is for mounting a semiconductor element such as a light emitting element or a protective element. In the mounting substrate, a heat sink for improving heat dissipation from the semiconductor element is embedded in an insulating support substrate. A top electrode is formed on the upper surface of the support substrate by laminating a metal film or the like. On the lower surface of the support substrate, a lower surface electrode having the same laminated structure as the upper surface electrode is formed. The support substrate is provided with a through hole, and the upper surface electrode and the lower surface electrode are electrically connected by a conductive material filled in the through hole. The material and structure of the mounting substrate are not particularly limited as long as the mounting substrate has a function of supporting a semiconductor element and electrically connecting to an external drive circuit.

  Although the shape of a support substrate is not specifically limited, It is preferable that an upper surface is flat. Examples of the material for the support substrate include ceramics such as alumina and aluminum nitride.

The first upper surface electrode and the second upper surface electrode may be any conductive material, and for example, Au, Pt, Ag, Al, Cu, Ni, Rh, or the like can be used. When mounting a light emitting element on a mounting substrate, it is preferable to use Ag, Al, or the like having high reflectivity for at least the outermost surface of the top electrode. Thereby, the light emitted from the light emitting element to the mounting substrate side can be reflected by the upper surface electrode, so that the light extraction efficiency is improved.
The first lower surface electrode and the second lower surface electrode may be any material having conductivity, and for example, Au, Pt, Ag, Cu, Ni, or the like can be used.

(Conductive material 6)
The conductive material is preferably a material having the same or higher thermal conductivity as the heat sink. For example, it can be formed using W, Cu, Au, Ag, or the like. When ceramics is used as the material for the support substrate, the conductive material is preferably a member having a high melting point that can withstand the firing temperature of the ceramic sheet. In order to enhance the heat transfer, by providing a conductive material so as to fill the inside of the through hole using a conductive paste, hot film plating, etc., the heat sink and the conductive material are brought into surface contact with each other. Since it can be regarded as a bulk, heat dissipation is improved.

  When ceramics is used as the support substrate, the mounting substrate can be manufactured by either a so-called post firing method (post firing method) or a cofire method (co-firing method). The post-fire method is a method of forming a top surface electrode, a bottom surface electrode, and a conductive portion of a conductive material after firing a ceramic substrate. On the other hand, the cofire method is a method of firing after forming a conductive portion on a ceramic substrate. According to the cofire method, there is an advantage that the adhesiveness between the ceramic plate and the conductive portion is improved, and the production cost is reduced because firing is performed at the same time. Of the conductive portion, the portion embedded in the support substrate may be formed by the cofire method, and the portion exposed to the upper surface and / or the lower surface of the support substrate may be formed by the postfire method. Thereby, even if it is a case where a conductive part is embedded inside a base | substrate, manufacturing cost can be held down, ensuring a dimensional accuracy. In addition, according to the cofire method, it is easy to form a cavity for housing a light emitting element, a protective element, and the like on the base by stacking and firing the punched green sheets.

(First through hole 7a, second through hole 7b)
The diameter (or width) of the through hole of the support substrate can be appropriately changed according to the size of the electrode of the light emitting element. The diameter (or width) of the through hole is preferably smaller than that of the die attach portion of the upper surface electrode and set to be small within a range that does not affect the conduction resistance value. This is because the shape of the die attach electrode is not limited as much as possible. Further, the diameter (or width) of the through hole may be the same diameter (or width) from the upper surface side to the lower surface side of the support substrate, or may be different.

(Heat sink 3)
The heat sink in this embodiment is a member that has a function of thermally connecting a semiconductor element via an upper surface electrode of a mounting substrate and a conductive material and radiating the heat of the semiconductor element to the outside. The heat sink may be partially exposed from the side surface and / or the bottom surface of the support substrate in order to enhance heat dissipation.
The heat sink is not particularly limited as long as the heat conductivity is higher than that of the support substrate, and various sizes can be used in consideration of the output of the semiconductor device 100, the temperature characteristics of the semiconductor element, and the like. Examples of the heat sink material include conductive materials such as Cu, W, Au, and CuW alloys. Further, an insulating material may be used. For example, by using ceramics such as alumina and aluminum nitride, warpage of the mounting substrate can be suppressed.

Second Embodiment
FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor device 200 according to the second embodiment of the present invention.

  The semiconductor device 200 according to the present embodiment includes a semiconductor element 10 such as a light emitting diode or a laser diode having a pair of electrodes on the same surface side, and a mounting substrate 1 on which the semiconductor element 10 is placed.

  The mounting substrate 1 is configured by forming electrodes on an insulating support substrate 2. The support substrate is configured by laminating a plurality of ceramic sheets, for example. As electrodes of the mounting substrate 1, a pair of first upper surface electrodes 4 a and second upper surface electrodes 4 b are provided on the upper surface of the support substrate 2, and a pair of first lower surface electrodes 5 a and second lower surface electrodes 5 b are disposed on the lower surface of the support substrate 2. Is provided.

  A heat sink 3 is embedded in the support substrate 2 for the purpose of improving heat dissipation from the semiconductor element 10. In the present embodiment, the heat sink 3 is made of a conductive material. The support substrate 2 is provided with an upper first through hole 71a that communicates with the heat sink 3 from below the first upper surface electrode 4a, and a lower first through hole 72a that communicates with the heat sink 3 from above the first lower surface electrode 5a. The upper first through hole 71 a and the lower first through hole 72 a are separated in the vertical direction by the heat sink 3. In addition, the support substrate 2 is provided with a second through hole 7b that communicates from below the second upper surface electrode 4b to the second lower surface electrode. The conductive material 6 is provided in the upper first through hole 71a, the lower first through hole 72a, and the second through hole 7b. The conductive material 6 provided in the upper first through hole 71 a and the conductive material 6 provided in the lower first through hole 72 a are connected to the surface of the heat sink 3.

  As shown in FIG. 3, the semiconductor device 200 according to this embodiment includes a heat sink 3 formed of a conductive material 6 provided in the upper first through hole 71a and a conductive material 6 provided in the lower first through hole 72a. Is sandwiched. Also in the present embodiment, it is possible to ensure the degree of freedom of the place where the conductive material 6 for connecting the upper surface electrode and the lower surface electrode is provided, and to connect the semiconductor element 10 and the heat sink 3 via the conductive material 6. Therefore, heat dissipation can be improved.

<Third Embodiment>
FIG. 4 is a schematic cross-sectional view showing an example of a semiconductor device 300 according to the third embodiment of the present invention.

  A semiconductor device 300 according to this embodiment includes a semiconductor element 10 such as a light emitting diode or a laser diode having a pair of electrodes on the same surface side, and a mounting substrate 1 on which the semiconductor element 10 is placed.

  The mounting substrate 1 is configured by forming electrodes on an insulating support substrate 2. The support substrate 2 is configured by laminating a plurality of ceramic sheets, for example. As electrodes of the mounting substrate 1, a pair of first upper surface electrodes 4 a and second upper surface electrodes 4 b are provided on the upper surface of the support substrate 2, and a pair of first lower surface electrodes 5 a and second lower surface electrodes 5 b are disposed on the lower surface of the support substrate 2. Is provided. The support substrate 2 is provided with a first through hole 7a and a second through hole 7b in the thickness direction of the support substrate 2 from below the first upper surface electrode 4a and the second upper surface electrode 4b, respectively. A conductive material 6 is provided inside the first through hole 7a and the second through hole 7b. The first upper surface electrode 4a and the first lower surface electrode 5a, and the second upper surface electrode 4b and the second lower surface electrode 5b are Each is connected by a conductive material 6.

  A plurality of heat sinks 3 are embedded in the support substrate 2 for the purpose of improving the heat dissipation from the semiconductor element 10. In FIG. 4, two heat sinks 3 are provided corresponding to each of the pair of upper surface electrodes, and the conductive material 6 connecting the first upper surface electrode 4 a and the first lower surface electrode 5 a penetrates one heat sink 3. The conductive material 6 that connects the second upper surface electrode 4 b and the second lower surface electrode 5 b penetrates the other heat sink 3. The conductive material 6 is connected to the heat sink 3 in the through hole of each heat sink 3.

In the semiconductor device 300 according to the present embodiment, by providing the heat sink 3 corresponding to each of the pair of upper surface electrodes, it is possible to ensure the degree of freedom of the place where the conductive material 6 that connects the upper surface electrode and the lower surface electrode is provided. it can. Further, since both electrodes of the semiconductor element 10 can be connected to the heat sink 3, heat dissipation can be improved.
<Fourth embodiment>
FIG. 5 is a schematic cross-sectional view showing an example of a semiconductor device 400 according to the fourth embodiment of the present invention.

  The semiconductor device 400 according to this embodiment includes a semiconductor element 10 such as a light emitting diode or a laser diode having a pair of electrodes on the same surface side, and a mounting substrate 1 on which the semiconductor element 10 is placed.

  The mounting substrate 1 is configured by forming electrodes on an insulating support substrate 2. The support substrate 2 is configured by laminating a plurality of ceramic sheets, for example. As electrodes of the mounting substrate 1, a pair of first upper surface electrodes 4 a and second upper surface electrodes 4 b are provided on the upper surface of the support substrate 2, and a pair of first lower surface electrodes 5 a and second lower surface electrodes 5 b are disposed on the lower surface of the support substrate 2. Is provided. The support substrate 2 is provided with a first through hole 7a and a second through hole 7b in the thickness direction of the support substrate 2 from below the first upper surface electrode 4a and the second upper surface electrode 4b, respectively. A conductive material 6 is provided inside the first through hole 7a and the second through hole 7b. The first upper surface electrode 4a and the first lower surface electrode 5a, and the second upper surface electrode 4b and the second lower surface electrode 5b are Each is connected by a conductive material 6.

  A heat sink 3 is embedded in the support substrate 2 for the purpose of improving heat dissipation from the semiconductor element 10. A conductive material 6 that connects the first upper surface electrode 4 a and the first lower surface electrode 5 a penetrates the heat sink 3. In the through hole of the heat sink 3, the conductive material 6 is connected to the heat sink 3.

  In the semiconductor device 400 according to the present embodiment, the conductive material 6 connected to the first electrode 15a of the semiconductor element 10 is disposed immediately below the first electrode 15a. Thereby, since the heat transfer path from the electrode of the semiconductor element 10 to the heat sink 3 is shortened, more efficient heat radiation is possible.

Further, in the semiconductor device 400 according to the present embodiment, the first upper surface electrode 4a is formed at a position inside the region where the semiconductor element 10 is placed, and the first electrode 15a side of the semiconductor element 10 is present. There is no wiring immediately below the outer periphery of the support substrate 2 and the support substrate 2 is exposed. Thus, when the semiconductor element 10 is bonded to the mounting substrate 1 using a conductive paste such as solder, self-alignment can be effectively exhibited. Further, the bonding member 8 can be prevented from flowing around the semiconductor element 10 and the bonding reliability can be improved. In addition, the lower portion of the semiconductor element 10 on the first electrode 15a side has the first upper surface electrode 4a that does not extend outside the region where the semiconductor element 10 is placed. Short circuit due to scooping up can be prevented.
<Fifth Embodiment>
FIG. 6 is a schematic cross-sectional view showing an example of a semiconductor device 500 according to the fifth embodiment of the present invention.

  A semiconductor device 500 according to this embodiment includes a semiconductor element having a semiconductor layer on a conductive substrate 37 and a mounting substrate 1 on which the semiconductor element is placed.

  In the present embodiment, the semiconductor element is provided with a light emitting structure including a first conductive type semiconductor layer 22 and a second conductive type semiconductor layer 24 on a conductive substrate 37 with an adhesive member 38 interposed therebetween. Part of the first conductivity type semiconductor layer 22 is removed at a plurality of locations, and a plurality of second electrodes 25b are formed so as to be in contact with the second conductivity type semiconductor layer 24 at each location. Since the plurality of second electrodes are connected to each other by the conductive adhesive member 38, they may be formed separately. In FIG. 6, the second electrodes 25b are depicted separately, but are actually electrically connected to each other. The second electrode 25b is electrically connected to the conductive substrate 37 via a conductive adhesive member 38.

  The first conductive semiconductor layer 22 is formed with a first electrode 25 a that is electrically separated from the adhesive member 38 by the insulating layer 28. The conductive substrate 37 and the bonding member 38 have the same planar shape, whereas the planar shape of the light emitting structure including the first conductive semiconductor layer 22 and the second conductive semiconductor layer 24 is conductive. Smaller than the conductive substrate 37 or the like. In this way, the first electrode 25a disposed outside is provided to extend outside the light emitting structure, and the pad electrode 26a is formed on the first electrode 25a extending outside.

The semiconductor element shown in FIG. 6 can be manufactured as follows.
First, on the growth substrate, for example, a second conductive semiconductor layer 24 and a first conductive semiconductor layer 22 made of a nitride semiconductor are stacked to form a semiconductor stacked structure. A light emitting layer may be formed between the second conductive semiconductor layer 24 and the first conductive semiconductor layer 22.
Next, a part of the surface of the second conductivity type semiconductor layer 24 is exposed in order to remove the first conductivity type semiconductor layer 22 at a plurality of locations and form the second electrode 25b.
Then, the second electrode 25 b is formed on the exposed surface of the second conductive semiconductor layer 24, and the first electrode 25 a is formed on the surface of the first conductive semiconductor layer 22.
Next, an insulating film 28 made of, for example, SiO ₂ is formed on the semiconductor laminated structure, and a part of the second electrode 25b electrically connected to the conductive substrate 37 side is exposed.
Next, for example, a bonding layer made of Ti—Pt—Au is formed.

On the other hand, for example, a Ti—Pt—Au bonding layer as a base layer and a bonding layer made of Sn—Au thereon are also formed on the conductive substrate side made of Cu—W.
Then, the adhesive layer on the semiconductor multilayer structure side and the conductive substrate side are bonded by thermocompression bonding, and then the growth substrate is removed by irradiating laser light from the growth substrate side. The transparent insulating film 27 and the pad electrode 26a are formed.
As described above, the semiconductor element shown in FIG. 6 is manufactured.

  The mounting substrate 1 is configured by forming electrodes on an insulating support substrate 2. The support substrate 2 is configured by laminating a plurality of ceramic sheets, for example. As electrodes of the mounting substrate 1, a first upper surface electrode 4 a and a second upper surface electrode 4 b are provided on the upper surface of the support substrate 2, and a first lower surface electrode 5 a and a second lower surface electrode 5 b are provided on the lower surface of the support substrate 2. . The support substrate 2 is provided with a first through hole 7a and a second through hole 7b in the thickness direction of the support substrate 2 from below the first upper surface electrode 4a and the second upper surface electrode 4b, respectively. A conductive material 6 is provided inside the first through hole 7a and the second through hole 7b. The first upper surface electrode 4a and the first lower surface electrode 5a, and the second upper surface electrode 4b and the second lower surface electrode 5b are Each is connected by a conductive material 6.

  A heat sink 3 is embedded in the support substrate 2 for the purpose of improving the heat dissipation from the semiconductor element. A conductive material 6 that connects the first upper surface electrode 4 a and the first lower surface electrode 5 a penetrates the heat sink 3. In the through hole of the heat sink 3, the conductive material 6 is connected to the heat sink 3.

  In the present embodiment, the semiconductor element is connected to the first upper surface electrode 4a of the mounting substrate 1 via the bonding member 8 so that the conductive substrate 37 faces. The pad electrode 26 a of the light emitting element is connected to the first upper surface electrode 4 b by a conductive wire 51.

  In the semiconductor device 500 according to the present embodiment, the conductive material 6 connected to the conductive substrate 37 of the semiconductor element is disposed immediately below the conductive substrate 37. Thereby, since the heat transfer path from the semiconductor element to the heat sink 3 is shortened, more efficient heat radiation is possible.

  In the semiconductor device 500 according to the present embodiment, as in the second embodiment, the first through hole 7a is separated in the vertical direction by the heat sink 3, and the conductive material provided in the upper first through hole and the lower first It is good also as a structure where the heat sink 3 was inserted | pinched with the electroconductive material provided in 1 through-hole.

  The semiconductor device according to the present invention includes various light emitting devices, particularly a light source for illumination, an LED display, a backlight light source such as a liquid crystal display device, a traffic light, an illumination switch, various sensors and various indicators, a moving image illumination auxiliary light source, and other general light sources. It can be suitably used for light sources for consumer products.

DESCRIPTION OF SYMBOLS 1 Mount substrate 2 Support substrate 3 Heat sink 4a 1st upper surface electrode 4b 2nd upper surface electrode 5a 1st lower surface electrode 5b 2nd lower surface electrode 6 Conductive material 7a 1st through-hole 7b 2nd through-hole 8 Joining member 10 Semiconductor element 11 Through Optical substrate 12, 22 First conductive type semiconductor layer 13 Light emitting layer 14, 24 Second conductive type semiconductor layer 15 Electrode 15a, 25a First electrode 15b, 25b Second electrode 26a Pad electrode 27 Transparent insulating film 28 Insulating film 37 Conductive Substrate 38 bonding member 51 wire 100, 200, 300, 400, 500 semiconductor device

Claims (5)

Insulating support substrate, first upper surface electrode and second upper surface electrode provided on the upper surface of the support substrate, first lower surface electrode and second lower surface electrode provided on the lower surface of the support substrate, and the support substrate A mounting board having a heat sink embedded in the inside,
A semiconductor device having a first electrode and a second electrode, and at least a semiconductor element mounted on the first upper surface electrode,
Inner portion of said mounting board, and, the semiconductor device to the outside of the semiconductor device viewed from above, a conductive material for connecting said first upper surface electrode and the first lower electrode, the second upper surface electrode and the A conductive material for connecting the second lower surface electrode ,
The heat sink is larger than the semiconductor element when the semiconductor device is viewed from above, and is connected to the conductive material that connects the first upper surface electrode and the first lower surface electrode. A semiconductor device, wherein the semiconductor device is spaced apart from a conductive material that connects the second lower surface electrode . The semiconductor element has a second conductive semiconductor layer including the second electrode and a first conductive semiconductor layer including the first electrode in order on the translucent substrate, and the first electrode And the second electrode is provided on the same surface side and is flip-chip mounted on the mounting substrate,
The semiconductor device according to claim 1, wherein the first electrode is connected to the first upper surface electrode. The semiconductor element has a conductive substrate,
The semiconductor device according to claim 1, wherein the semiconductor element is connected to the first upper surface electrode so that the conductive substrate faces the first upper surface electrode. The semiconductor device according to any one of claims 1 to 3, characterized in that the conductive material extends through the heat sink. The semiconductor device according to any one of claims 1 to 3, characterized in that said conductive material is connected to the upper and lower surfaces of the heat sink.

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