JP5040657B2 - Exposure apparatus, exposure method, device manufacturing method, and device assembly method - Google Patents

Description

The present invention relates to an exposure apparatus, an exposure method, a device manufacturing method relates to a device assembling method.
This application claims priority based on Japanese Patent Application No. 2005-308326 for which it applied on October 24, 2005, and uses the content here.

  In a lithography process, which is one of the manufacturing processes of microdevices (such as electronic devices) such as semiconductor devices, a pattern image of a mask (reticle, photomask, etc.) is coated with a photoresist (wafer, ceramic plate, glass). An exposure apparatus for exposing on a plate or the like) is used. Examples of the exposure apparatus include a batch exposure type (stationary exposure type) projection exposure apparatus such as a stepper, and a scanning exposure type projection exposure apparatus (scanning type exposure apparatus) such as a scanning stepper.

The exposure apparatus includes a stage device. The table unit of the stage device is provided with a reflective surface (mirror surface). The reflecting surface is used for highly accurate position measurement using an optical measuring instrument such as a laser interferometer. The position of the table portion is measured and controlled in nanometer units. As the required accuracy improves, the surface shape (irregularity) of the reflecting surface and the influence of thermal deformation of the surface plate that supports the optical measuring instrument are raised as issues. Furthermore, when the exposure process is repeated, heat may be accumulated in the table unit, and the table unit and the reflecting surface may be thermally deformed. Patent Document 1 discloses a technique for measuring the surface shape of the reflective surface for each lot (for example, several tens of substrates) and correcting the position coordinates of the thermally deformed table unit and the reflective surface.
JP 2005-252246 A

  Such coordinate correction takes a relatively long time (for example, 20 to 30 minutes). The exposure process substantially stops during the coordinate correction period.

  It is an object of the present invention to provide a stage apparatus whose position is controlled with high accuracy and a coordinate correction method thereof.

  The present invention adopts the following configuration associated with each figure showing the embodiment. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

According to the first aspect of the present invention, there is provided an exposure apparatus for forming a predetermined pattern on a substrate, an optical member through which exposure light passes, a base having a guide surface, the substrate, and the guide A substrate table that moves relative to the optical member along the guide surface without contact with a surface; a position information detection device that obtains information about the position of the substrate table while the substrate table is moving; and the substrate table Provided on the back side of the holding surface for holding the substrate, and a shape information detecting device for obtaining information on the shape of the substrate table; transmitting power to the shape information detecting device in a contactless manner; and the substrate table during the movement, a power transmission device for receiving information relating to the shape in a non-contact from the shape information detecting device, wherein connected to the power transmission device and the position information detecting device, wherein Wherein the substrate table sent from the shape information detecting device when the information on the position of the substrate table sent from the position information detecting device when the plate table is moving, the substrate table is moved And a control device for driving the substrate table by generating a signal for controlling the position of the substrate table using information on the shape.
According to another aspect of the present invention, there is provided an exposure apparatus that exposes the substrate by irradiating the substrate with an energy beam through the projection optical system, the projection optical system being held in a state where the substrate is held. A substrate table that moves relative to the substrate table, a first part provided on the substrate table, and a second part that is movable relative to the first part, wherein the first part and the second part cooperate with each other. A position information detecting device that obtains information on the position of the substrate table by operation, and a shape that is provided on the back side of the holding surface for holding the substrate in the substrate table and obtains information on the shape of the substrate table or the first portion a detection device, during movement of the substrate table with respect to the shape detecting apparatus, a transmission apparatus for transmitting power in a contactless, with communicating with the position information detection device and the transmission device Information on the position of the substrate table obtained by the position information detection device when the substrate table is moving, and information on the shape obtained by the shape detection device when the substrate table is moving And a driving device for driving the substrate table based on the above .

According to a second aspect of the present invention, there is provided a device manufacturing method using an exposure process for projecting a predetermined pattern formed on a reticle onto a substrate, wherein the substrate is supported by a substrate table, the substrate table Non-contact support on the guide surface and moving along the guide surface, obtaining information on the position of the substrate table by a position information detection device during movement of the substrate table, movement of the substrate table During, obtaining information on the shape of the substrate table by a detection unit provided on the back side of the holding surface that holds the substrate in the substrate table, supplying power to the detection unit in a non-contact manner, the substrate transmitting information about the shape of the table from the detector to the control device in a non-contact, the position when the substrate table is moved Information on the position of the substrate table sent from the information detection device and information on the shape of the substrate table sent from the detection unit when the substrate table is moving are used. Generating a signal for controlling a position, driving the substrate table, moving the reticle in synchronization with the movement of the substrate table, and irradiating the substrate with exposure light from an optical member; A method of manufacturing a device is provided. This exposure apparatus can accurately move the substrate.

According to a third aspect of the present invention, there is provided an exposure method for exposing a substrate by irradiating an energy beam through a projection optical system, wherein the substrate is placed on a substrate table. A table having a first part provided on the substrate table, and a second part movable with respect to the first part, wherein the first part and the first part The position information detecting device cooperating with the two parts is used to obtain information on the position of the substrate table, and the substrate table is provided behind the holding surface for holding the substrate during the movement of the substrate table . was that the shape detecting apparatus using obtaining information about the shape of the substrate table or the first part, the shape detecting device, to supply power in a non-contact, and the position information detecting device and before A control device connected to the transmission device includes information on the position of the substrate table sent from the position information detection device when the substrate table is moving, and the position information when the substrate table is moving. And a method of generating a signal for controlling the position of the substrate table using information related to the shape of the substrate table sent from a shape detection device, and driving the substrate table. The

According to a fourth aspect of the present invention, there is provided a device assembly method including a lithography process, wherein a device pattern is transferred to a substrate by the exposure method described above in the lithography process .

  According to the present invention, it is possible to provide a stage device whose position is controlled with high accuracy and a coordinate correction method thereof.

It is a figure which shows schematic structure of the exposure apparatus of embodiment. It is a perspective view which shows the wafer stage system of exposure apparatus. It is a reverse view of the wafer table which affixed the strain gauge. It is an electrical block surface provided on the wafer table. It is the top view which looked at the wafer table from the upper part. It is a figure which shows the measuring method of the surface shape (an unevenness | corrugation, inclination) of a reflective surface. It is a figure which shows the measuring method of the surface shape (an unevenness | corrugation, inclination) of another reflective surface. It is a figure which shows calculation of the surface shape of a reflective surface. It is a figure which shows the calculation method of distortion data. It is a flowchart of calculation of the surface shape of a reflective surface, and distortion data. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Laser interferometer system for reticles, 14 ... Stage control unit, 20 ... Main control system, 22 ... Alignment system, 23A ... Auto focus sensor, 30 ... Focus detection system, 31 ... Surface plate, 31a ... Guide surface, 33X ... X axis guide, 42 ... Block chamber, 45 ... Strain gauge, 46 ... Power receiving unit, 48 ... Power supply unit, 49 ... Fixed signal transmission / reception unit, 55 ... Z leveling mechanism, 90 ... Power supply unit, 92 ... Calculation unit ( Correction unit), 94 ... Control unit, 96 ... Wheatstone bridge circuit, AX ... Optical axis, FL ... Floor, IL ... Illumination light, MR ... Memory, Mr ... Reticle moving mirror, Ox ... Reference point, PL ... Projection optical system , R ... reticle, RST ... reticle stage, RY ... reference line, SY ... spacing, WST ... wafer stage, WTB ... wafer Table

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the present embodiment, the present invention is applied to a batch exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a scanning stepper.

FIG. 1 is a block diagram of each functional unit constituting the exposure apparatus. In FIG. 1, the chamber for storing the exposure apparatus is omitted. As a light source for exposure, a laser light source 1 composed of a KrF excimer laser (wavelength 248 nm) or an ArF excimer laser (wavelength 193 nm) is used. As a light source for exposure, a laser emitting near-infrared light from a solid-state laser light source (such as YAG or a semiconductor laser) that emits laser light in the ultraviolet at an oscillation stage such as other F ₂ lasers (wavelength 157 nm). A lamp that emits harmonic laser light in the vacuum ultraviolet region obtained by wavelength conversion of light, or a mercury discharge lamp that is often used in this type of exposure apparatus can also be used. That is, as the exposure light, for example, far ultraviolet light (DUV light) such as bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, ArF excimer laser light (wavelength 193 nm) ) And vacuum ultraviolet light (VUV light) such as F ₂ laser light (wavelength 157 nm).

  Illumination light (exposure light) IL from the laser light source 1 includes a homogenizing optical system 2 composed of a lens system and a fly-eye lens system, a beam splitter 3, a variable dimmer 4 for adjusting the amount of light, a mirror 5, and The reticle blind 7 is irradiated with a uniform illuminance distribution through the relay lens system 6. Illumination light IL limited to a predetermined shape (for example, a quadrangle for the batch exposure type, for example, a slit shape for the scanning exposure type) by the reticle blind 7 is irradiated onto the reticle R as a mask via the imaging lens system 8 and is thus used. An image of the opening of the reticle blind 7 is formed on R. The illumination optical system 9 includes the homogenizing optical system 2, the beam splitter 3, the variable light dimmer 4 for adjusting the light amount, the mirror 5, the relay lens system 6, the reticle blind 7, and the imaging lens system 8. .

  Of the circuit pattern region (pattern) formed on the reticle R, the image of the portion irradiated with the illumination light is a two-sided telecentric substrate (a sensitive substrate or a photoreceptor) via a projection optical system PL with a projection magnification β of a reduction magnification. ) Is imaged and projected on the wafer W coated with the photoresist. Although the projection optical system PL is a refractive system, a catadioptric system or the like can also be used. In addition to the wafer W, a glass substrate for liquid crystal, a ceramic substrate for magnetic head, and the like can be applied. Hereinafter, the Z-axis is taken in parallel to the optical axis AX of the projection optical system PL, the X-axis is parallel to the plane of FIG. 1 in the plane perpendicular to the Z-axis, and the Y-axis is perpendicular to the plane of FIG. Take and explain. When the projection exposure apparatus of this example is a scanning exposure type, the direction along the Y axis (Y direction) is the scanning direction of the reticle R and wafer W during scanning exposure, and the illumination area on the reticle R is: The shape is elongated in the direction (X direction) along the X axis, which is the non-scanning direction.

  The reticle R disposed on the object plane side of the projection optical system PL is held on a reticle stage RST (mask stage) by vacuum suction or the like. The movement coordinate position (X-direction, Y-direction position, and rotation angle around the Z-axis) of reticle stage RST is fixed to reticle moving mirror Mr fixed to reticle stage RST and the upper side surface of projection optical system PL. Measurement is performed sequentially with the reference mirror (not shown) and the reticle laser interferometer system 10 arranged to face the reference mirror. The reticle laser interferometer system 10 actually constitutes a triaxial laser interferometer having at least one axis in the X direction and two axes in the Y direction.

  In addition, movement of reticle stage RST is performed by reticle drive system 11 including a linear motor, a fine actuator, and the like. Measurement information of the reticle laser interferometer system 10 is supplied to a stage control unit 14, which in turn controls the measurement information and control information (input information) from a main control system 20 comprising a computer that controls the overall operation of the apparatus. ) To control the operation of the reticle drive system 11.

  Wafer W arranged on the image plane side of projection optical system PL is held on wafer stage WST (movable stage) by vacuum suction or the like. Wafer stage WST has a wafer table WTB (details will be described later) for attracting and holding wafer W, and a Z leveling mechanism for controlling the focus position (position in the Z direction) of wafer W and the inclination angles around the X and Y axes. (Details will be described later).

  In the case of the batch exposure type, wafer stage WST moves stepwise on the guide surface in the X direction and the Y direction. In the case of the scanning exposure type, wafer stage WST is placed on the guide surface so that it can move at a constant speed in at least the Y direction and can move stepwise in the X and Y directions during scanning exposure. The movement coordinate position of wafer stage WST (the position in the X direction, the Y direction, and the rotation angle around the Z axis) is a reference mirror Mf fixed to the lower part of projection optical system PL and a movement fixed to wafer stage WST. Measurement is sequentially performed by the mirror Mw and the laser interferometer system 12 disposed so as to face the mirror Mw. The movable mirror Mw, the reference mirror Mf, and the laser interferometer system 12 actually constitute a three-axis laser interferometer having at least two axes in the X direction and one axis in the Y direction. The laser interferometer system 12 also actually includes a biaxial laser interferometer for measuring rotation angles (yawing and pitching) around the X axis and the Y axis.

  In FIG. 1, the wafer stage WST is moved by a drive system 13 including actuators such as a linear motor and a voice coil motor (VCM). Measurement information of the laser interferometer system 12 is supplied to the stage control unit 14, and the stage control unit 14 controls the operation of the drive system 13 based on the measurement information and control information (input information) from the main control system 20. .

  The oblique incidence type multi-point autofocus sensors 23A and 23B are fixed to the lower side surface of the projection optical system PL. The stage control unit 14 calculates defocus amounts from the image plane of the projection optical system PL at the plurality of measurement points using information on the lateral shift amounts of the slit images, and these defocus amounts are controlled in a predetermined manner during exposure. The Z leveling mechanism in wafer stage WST is driven by an autofocus method so as to be within accuracy.

  The stage control unit 14 includes a reticle-side control circuit that optimally controls the reticle driving system 11 based on measurement information from the reticle laser interferometer system 10, and a wafer-based control circuit based on measurement information from the laser interferometer system 12. And a wafer-side control circuit for optimally controlling the drive system 13. When the projection exposure apparatus of this example is a scanning exposure type, when the reticle R and the wafer W are scanned synchronously during scanning exposure, both control circuits cooperatively control the drive systems 11 and 13. The main control system 20 exchanges commands and parameters with each control circuit in the stage control unit 14 and executes an optimum exposure process according to a program designated by the operator. For this purpose, an operation panel unit (not shown) (including an input device and a display device) that provides an interface between the operator and the main control system 20 is provided.

  At the time of exposure, it is necessary to align the reticle R and the wafer W in advance. Therefore, the projection exposure apparatus of FIG. 1 includes a reticle alignment system (RA system) 21 for setting the reticle R at a predetermined position and an off-axis alignment system 22 for detecting marks on the wafer W. Is provided.

  In FIG. 1, in the case of the batch exposure type, an operation of projecting the pattern of the reticle R onto one shot area on the wafer W via the projection optical system PL under the illumination light IL, and the wafer stage WST. Then, the step of moving the wafer W stepwise in the X and Y directions is repeated in a step-and-repeat manner. On the other hand, in the case of the scanning exposure type, irradiation of the illumination light IL to the reticle R is started, and an image of a part of the pattern of the reticle R via the projection optical system PL is formed on one shot area on the wafer W. In a projected state, the reticle stage RST and wafer stage WST are moved in synchronization with the Y direction (synchronous scanning) using the projection magnification β of the projection optical system PL as a speed ratio (synchronous scanning), and the reticle R is moved to the shot area. The pattern image is transferred. Thereafter, the irradiation of the illumination light IL is stopped, and the step-and-scan method is performed by repeating the operation of moving the wafer W stepwise in the X and Y directions via the wafer stage WST and the above-described scanning exposure operation. Thus, the pattern image of the reticle R is transferred to all shot areas on the wafer W.

Next, the configuration and operation of the wafer stage WST of the projection exposure apparatus of this example and the wafer stage system including this drive mechanism will be described in detail.
FIG. 2 shows a wafer stage system of the projection exposure apparatus of this example. In FIG. 2, for example, a flat platen 31 (base member) is placed on a floor FL (installation surface) in a clean room of a semiconductor device manufacturing factory. It is installed via a vibration isolator (not shown). The upper surface of the wafer surface plate 31 is a guide surface 31a finished with high flatness, and the guide surface 31a is perpendicular to the Z axis and substantially parallel to the horizontal plane.

  Wafer stage WST is mounted on guide surface 31a so as to be movable in the X and Y directions via an air bearing. Wafer stage WST has a wafer table WTB that holds wafer W (object) by suction, and a Z leveling mechanism 55 that controls the position of wafer table WTB in the Z direction and the tilt angles (yawing and pitching) about the X and Y axes. And. Further, a Y-axis guide 33Y substantially parallel to the Y-axis is disposed above the guide surface 31a so as to be movable in the X-direction, and the Y-axis guide 33Y is disposed substantially parallel to the X-axis so as to be movable in the Y-direction above the Y-axis guide 33Y. A shaft guide 33X is arranged. The Y-axis guide 33Y and the X-axis guide 33X are substantially orthogonal. A cylindrical Y-axis slider 39 is movably mounted in the Y direction on the outer surface of the Y-axis guide 33Y, and a cylindrical X-axis slider 40 is movable in the X direction on the outer surface of the X-axis guide 33X. It is attached to. The inner surfaces of the sliders 39 and 40 are in contact with the outer surfaces of the guides 33Y and 33X through air bearings (thin gas layers such as air), whereby the sliders 39 and 40 move smoothly along the guides 33Y and 33X, respectively. it can. A Z leveling mechanism 55 is connected to the sliders 39 and 40, and the wafer table WTB is placed on the Z leveling mechanism 55 in a state where the relative positional relationship with the sliders 39 and 40 can be controlled.

  A plurality of magnets are also arranged at a predetermined pitch in the Y direction on the inner surfaces of the stators 37YC and 37YD. A pair of X-axis linear motors 44XA and 44XB as a coarse movement mechanism for driving the Y-axis guide 33Y in the X direction with respect to the guide surface 31a from the movers 36XA and 36XB and the stators 36XC and 36XD are provided. It is configured. Also, a pair of Y-axis linear motors 44YA and 44YB as a coarse movement mechanism for driving the X-axis guide 33X in the Y direction with respect to the guide surface 31a from the movers 37YA and 37YB and the stators 37YC and 37YD are provided. It is configured.

In FIG. 2, a Z leveling mechanism 55 is connected to the sliders 39 and 40, and a wafer table WTB is mounted on the Z leveling mechanism 55 via an air bearing. Wafer table WTB and Y-axis slider 39 can be controlled in a non-contact manner via X-axis actuators 53XA and 53XB made of a voice coil motor and X-axis actuator 54X made of an EI core system, respectively. The wafer table WTB and the X-axis slider 40 can be controlled in a non-contact manner via Y-axis actuators 53YA and 53YB made of a voice coil motor and a Y-axis actuator 54Y made of an EI core system. It is connected with.
The actuators 53XA, 53XB, 53YA, 53YB and the EI core type actuators 54X, 54Y made of the voice coil motor have coil portions that receive power supply disposed on the X-axis slider 40 or Y-axis slider 39 side. (So-called moving magnet system). Therefore, it is not necessary to connect wiring for supplying electric power (power line or the like) or piping for refrigerant necessary for cooling the coil to wafer table WTB.

  In this case, the average positions in the X and Y directions of wafer table WTB relative to sliders 39 and 40 are controlled by actuators 54X and 54Y. Then, fine adjustment of the position in the X direction of the wafer table WTB and fine adjustment of the rotation angle around the Z axis are performed by the average value and balance of the thrust in the X direction of the actuators 53XA and 53XB, and Y of the actuators 53YA and 53YB is adjusted. The position of wafer table WTB in the Y direction is finely adjusted based on the average value of the direction thrust. That is, the actuators 53XA, 54X, 53XB, 53YA, 54Y, and 53YB have the wafer table WTB (wafer W) moved in the X direction, the Y direction, and the rotation direction around the Z axis with respect to the sliders 39 and 40 in a predetermined narrow range. It can be regarded as a fine movement mechanism that is relatively driven.

  In FIG. 2, the -X direction mirror-finished side surface of wafer table WTB is irradiated with two laser beams separated from laser interferometer 12X in the Y direction, and -Y direction mirror-finished side surface of wafer table WTB. A laser beam is irradiated from the laser interferometer 12Y, and the X and Y coordinates of the wafer table WTB and the rotation angle around the Z axis are measured by the laser interferometers 12X and 12Y. Laser interferometers 12X and 12Y correspond to the laser interferometer system 12 of FIG. Linear motors 44XA, 44XB, 44YA, 44YB (coarse movement mechanism) and actuators 53XA, 54X, 53XB, 53YA, 54Y, 53YB (fine movement mechanism) correspond to the drive system 13 in FIG.

  Based on the measurement information of the laser interferometers 12X and 12Y, the stage control unit 14 in FIG. 1 drives the coarse movement mechanism and the fine movement mechanism. The former coarse movement mechanism can be used for the step movement of the wafer table WTB in the batch exposure type and the scanning exposure type, and can further be used for the constant speed movement of the wafer table WTB during the synchronous scanning in the scanning exposure type. The latter fine movement mechanism can be used to correct the positioning error of the wafer table WTB in the batch exposure type and the scanning exposure type, and can further be used to correct the synchronization error of the wafer table WTB in the scanning exposure type. .

  FIG. 3 shows the back surface of wafer table WTB. In order to facilitate understanding of the following description, in FIG. 3, the surfaces in contact with the air bearings of the actuator 54X, the actuator 54Y, and the Z leveling mechanism 55 described in FIG. 2 are not drawn. The material of wafer table WTB (table part) is made of a material having high specific rigidity (a value obtained by dividing rigidity by weight per unit volume) that is difficult to be deformed and is lightweight. For example, the material of wafer table WTB includes ceramics as an example. Since the value measured by the laser interferometer system 12 differs if it is thermally expanded during exposure, the ceramic is preferably a ceramic having a low expansion coefficient, such as a glass ceramic.

  As can be understood from FIG. 3, the wafer table WTB (table portion) has a wall surface made as thin as possible and reinforced with a plurality of ribs extending in the X direction and the Y direction in order to reduce the weight. In FIG. 3, nine block chambers 42 are formed by ribs extending in the X direction and the Y direction. In each block chamber 42, a deformation amount detection sensor for detecting minute expansion / contraction generated in the wafer table WTB is attached. Specifically, a strain gauge 45 (strain gauge) that can be detected in picometer units by using a change in electrical resistance is attached. In each block chamber 42, three uniaxial strain gauges 45 are attached in order to detect the strain amount Sm in the X direction, the Y direction, and the Z direction. Of course, depending on the type of strain gauge, there are cross type that can measure two axis directions orthogonal to one strain gauge, and rosette type that can measure two orthogonal axis directions and intermediate axis directions. Accordingly, the number of strain gauges 45 to be attached can be changed. In order to detect in detail the minute expansion / contraction generated in the wafer table WTB, it is better to attach as many strain gauges 45 as possible in the X and Y directions.

  As described above, wafer table WTB is formed of a material such as glass ceramic and has little thermal expansion, but still wafer table WTB expands slightly during transfer exposure. The strain gauge 45 detects this slight thermal expansion.

  A power receiving unit 46 and a signal transmitting / receiving unit 47 are provided on the side wall of wafer table WTB. The power receiving unit 46 is configured by an electromagnetic induction coil, and specifically, an E-type core or a pot core can be applied. With this configuration, the power receiving unit 46 receives the power from the fixed-side power supply unit 48 (see FIG. 4) in a non-contact manner. The signal transmission / reception unit 47 is configured by a photocoupler using infrared rays or the like or a radio wave transmitter / receiver using weak radio waves. The signal transmission / reception unit 47 communicates with the fixed-side signal transmission / reception unit 49 (see FIG. 4). The signal transmission / reception unit can transmit and receive signals by superimposing signals by using two or more kinds of frequencies or applying frequency modulation to a radio wave transmitter / receiver using a photocoupler using weak infrared waves or the like. . The transmission apparatus according to the present invention includes, for example, a power receiving unit 46, a signal transmission / reception unit 47, a power supply unit 48, and a fixed-side signal transmission / reception unit 49.

  As described with reference to FIG. 2, the position of wafer table WTB can be controlled without contact, thereby reducing the influence of vibration and the like from disturbance. On the other hand, since it is preferable that wafer table WTB is non-contact, the power supply line or the communication line is avoided from contacting between wafer table WTB and the outside thereof. However, the power receiving unit 46 and the signal transmitting / receiving unit 47 described above are avoided. With this configuration, it is possible to supply power and signals without contact.

  FIG. 4 is an electrical block surface provided on wafer table WTB. The main control system 20 (and the stage control unit 14, which will be described in the main control system 20 hereinafter) on the fixed side that is the fixed installation side, and the moving wafer table WTB that is the separation movement side. In addition, the dashed-dotted line of FIG. 4 has shown that it is a non-contact or isolation | separation state.

In the main control system 20, a power supply unit 90 and a calculation unit 92 are provided, connected to the power supply unit 90, connected to the slider 39 or 40, and connected to the calculation unit 92. In addition, a fixed-side signal transmitting / receiving unit 49 attached to the slider 39 or 40 is provided. The fixed-side signal transmission / reception unit 49 sends a control signal to the signal transmission / reception unit 47 and further receives a detection signal of the strain gauge 45. The power supply unit 90 excites a commercial power supply 200V or 100V with a power transistor switch or the like. The high frequency excited voltage is sent to an electromagnetic induction coil which is a power supply unit 48. An E-type core or a pot core can be applied as the electromagnetic induction coil. The fixed-side signal transmission / reception unit 49 includes a photocoupler using infrared rays or a radio wave transmitter / receiver using weak radio waves. A photocoupler using infrared rays or a radio wave transmitter / receiver using weak radio waves can transmit and receive signals by superimposing signals by using two or more kinds of frequencies or applying frequency modulation.
In addition, the power supply unit 48 and the fixed-side signal transmission / reception unit 49, and the power reception unit 46 and the signal transmission / reception unit 47 are combined, so that the power supply unit and the signal transmission / reception coil can be used. You may make it share in both.

  Wafer table WTB is provided with a power receiving unit 46, which is an electromagnetic induction coil, as a power source that inputs to strain gauge 45 and a power source that drives signal transmission / reception unit 47. Since the primary side (power supply unit 48) of the transmission device is high-frequency excited by a rectangular wave (or sine wave) inverter, a rectangular wave (or sine wave) corresponding to the winding ratio between the primary and secondary is used. ) A voltage is generated on the secondary side (power receiving unit 46). The high frequency from the electromagnetic induction coil that is the power receiving unit 46 is rectified by a rectifier circuit in the control unit 94 and converted into a DC voltage through a power switch or the like, and a DC voltage of 1 to 5 V is input to the input terminal of the Wheatstone bridge circuit 96. The The rectified DC voltage also serves as an input power source for the signal transmission / reception unit 47. A strain meter 45 is connected to the Wheatstone bridge circuit 96, and an output (strain amount Sm) corresponding to a change in resistance is taken out. The extracted output is sent from the signal transmission / reception unit 47 to the fixed-side signal transmission / reception unit 49, and distortion data (value calculated from a plurality of distortion amounts Sm) of the wafer table WTB is calculated by the correction unit in the calculation unit 92. The A correction unit may be provided in the wafer table WTB, and the calculated distortion data may be sent from the signal transmission / reception unit 47 to the fixed-side signal transmission / reception unit 49. The controller 94 gives an input voltage to the Wheatstone bridge circuit 96 according to the sampling period. Sampling may be performed every time the wafer W is transferred and exposed, or may be sampled many times during the transfer exposure of the wafer W. Conventionally, the process of measuring and correcting the surface shape (irregularity) of the movable mirror (reflective surface) for each lot (several tens) has been performed, but the process itself becomes unnecessary, and each wafer is processed. Alternatively, the distortion amount of wafer table WTB can be measured for each transfer exposure (each shot exposure), and the surface shape of the surface of the movable mirror (reflection surface) can be grasped. Therefore, the positional accuracy of the wafer W can be improved more than ever.

  FIG. 5 is a plan view of the wafer table WTB that holds and moves the wafer W as viewed from above. The actuator is not shown. In FIG. 5, reflection surfaces Mw (MwX, MwY) are arranged at two mutually perpendicular edges of a wafer table WTB having a rectangular shape in plan view. In FIG. 5 and subsequent figures, for convenience of explanation, the position of the laser interferometer 12Y is changed to be opposite to the position shown in FIG. 2 across the wafer table WTB.

  On wafer table WTB, reference member 300 is arranged at a predetermined position outside wafer W. The reference member 300 is provided with a reference mark PFM detected by the alignment system 22 and a reference mark MFM detected by the reticle alignment system 21 in a predetermined positional relationship. The upper surface 301A of the reference member 300 is a substantially flat surface, and is provided on the surface of the wafer W held by the wafer table WTB and at substantially the same height (level) as the upper surface of the wafer table WTB. The upper surface 301A of the reference member 300 can also serve as a reference surface for a focus detection system (for example, autofocus sensors 23A and 23B).

  The alignment system 22 also detects alignment marks formed on the wafer W. As shown in FIG. 5, a plurality of shot areas S1 to S24 are formed on the wafer W, and a plurality of alignment marks are provided on the wafer W corresponding to the plurality of shot areas S1 to S24. In FIG. 5, the shot areas are illustrated as being adjacent to each other, but are actually separated from each other, and the alignment marks are provided on the scribe lines that are the separated areas.

  On wafer table WTB, illuminance unevenness sensor 400 is arranged at a predetermined position outside wafer W as a measurement sensor. The illuminance unevenness sensor 400 includes an upper plate 401 having a rectangular shape in plan view. The upper surface 401A of the upper plate 401 is a substantially flat surface, and is provided on the surface of the wafer W held on the wafer table WTB and substantially the same height (level) as the upper surface of the wafer table WTB.

  An aerial image measurement sensor 500 is provided at a predetermined position outside the wafer W on the wafer table WTB. The aerial image measurement sensor 500 includes an upper plate 501 having a rectangular shape in plan view. The upper surface 501A of the upper plate 501 is a substantially flat surface, and is provided on the surface of the wafer W held on the wafer table WTB and substantially the same height (level) as the upper surface of the wafer table WTB.

  Although not shown, an irradiation amount sensor (illuminance sensor) is also provided on the wafer table WTB, and the upper surface of the upper plate of the irradiation amount sensor is the surface of the wafer W held on the wafer table WTB or the wafer. It is provided at almost the same height (level) as the upper surface of the table WTB.

  Each of the −X side end and the + Y side end of the wafer table WTB having a rectangular shape in plan view is formed along the Y-axis direction and substantially perpendicular to the X-axis direction, and along the X-axis direction. And a reflecting surface MwY that is substantially perpendicular to the Y-axis direction. A laser interferometer 12X constituting the laser interferometer system 12 is provided at a position facing the reflecting surface MwX. In addition, a laser interferometer 12Y constituting the laser interferometer system 12 is provided at a position facing the reflection surface MwY. A beam BX from a laser interferometer 12X that detects a position (distance change) in the X-axis direction is vertically projected on the reflection surface MwX, and a position (distance change) in the Y-axis direction is detected on the reflection surface MwY. The beam BY from the laser interferometer 12Y is projected vertically. The optical axis of the beam BX is parallel to the X-axis direction, the optical axis of the beam BY is parallel to the Y-axis direction, and these two are orthogonal to each other (perpendicularly intersect) with the optical axis AX of the projection optical system PL. It has become.

(Measuring method of surface shape of reflective surface)
Hereinafter, an example of a method for measuring the surface shapes (unevenness and inclination) of the reflection surfaces MwX and MwY will be described.
Before transfer exposure of the first wafer W, wafer table WTB is at a predetermined temperature and is not deformed due to thermal expansion or the like. In this state, wafer table WTB is moved by main control system 20 along the X-axis direction from start position PSTE toward intermediate position PSTM, as shown in FIG. During this movement, data for calculating the surface shape of the reflecting surface MwY is acquired by the main control system 20. That is, main control system 20 moves wafer table WTB in the −X direction from start position PSTE to intermediate position PSTM while monitoring the measurement values of laser interferometers 12X and 12Y. This movement is performed in the order of acceleration after the start of movement, constant speed movement, and deceleration immediately before the end of movement. In this case, the acceleration region and the deceleration region are few and almost constant speed regions.

  During the movement of the wafer table WTB, the main control system 20 samples the measurement values of the laser interferometers 12Y and 12X in synchronization with the sampling timing of the measurement values of the laser interferometer 12X every predetermined number of times. In this way, the surface shape (unevenness or inclination data) for calculating the surface shape of the reflective surface MwY is calculated.

Hereinafter, a method of calculating the surface shape of the reflective surface MwY will be described with reference to FIG.
As described above, the interferometer actually measures the amount of rotation of the reflecting surfaces MwX and MwY with reference to the fixed mirror (the above-described reference mirror). As shown in FIG. 8, the laser interferometer 12Y will be described as detecting the local inclination (rotation amount and bending amount) of the reflecting surface MwY as a surface shape with reference to a virtually fixed reference line RY.

In FIG. 8, the distance between the reference line RY and the reflective surface MwY is Ya (average value Ya = (Yθ1 + Yθ2) / 2 measured by measured values Yθ1 and Yθ2), and the amount of local rotation of the reflective surface MwY at that position. Let (tilt angle, bend angle) be θY (x). The laser interferometer 12Y measures the measured values Yθ1 and Yθ2 up to the reflecting surface MwY at two points separated by SY in the X-axis direction on the reference line RY, and measures the measured values Yθ (x) of both distances. . That is, the measured value Yθ (x) represented by the following equation (1) is measured.
Yθ (x) = Yθ2−Yθ1 (1)

  Here, when the reflecting surface MwY is at the reference point Ox in the X-axis direction, that is, when the beam BY of the laser interferometer 12Y is incident on the fixed point O on the reflecting surface MwY. It is assumed that measurement has started from. This time is the time when wafer table WTB has finished accelerating. At this time, it is assumed that the main control system 20 resets the measured values of the laser interferometer 12X and the laser interferometer 12Y to zero. The state of this reset is visually shown in the lower half of FIG.

In this case, the local rotation amount (tilt angle) θY (x) of the movable mirror is a minute angle of about 1 to 2 seconds at most, and the interval SY is 10 mm to several tens mm, so the angle θY (x ) Can be approximated by the following equation (2).
θY (x) = Yθ (x) / SY (2)
On the other hand, the unevenness amount ΔY (x) with the Y coordinate value of the reflection surface MwY at the reference point Ox of the reflection surface MwY as the reference (ΔY (x) = 0) is expressed by the following equation (3 ).

However, in practice, yawing or the like may occur in wafer table WTB during movement, and therefore ΔY (x) includes an error due to the yawing amount in addition to the unevenness due to the inclination of reflecting surface MwY. Therefore, it is necessary to subtract the error due to the yawing amount from the value obtained by the above equation (3).

  In this case, since wafer table WTB only moves one-dimensionally in the X-axis direction, two beams BXθ1 and BXθ2 of laser interferometer 12X continue to be projected onto substantially the same point on reflecting surface MwX. In this case, since the measurement value of the laser interferometer 12X is reset at the reference point Ox as described above, the value of the laser interferometer 12X at the position x is the yawing amount Xθ of the wafer table WTB with reference to the reference point Ox. (X).

  Therefore, using the measurement value Xθ (x) by the laser interferometer 12X corresponding to the measurement value θY (x) of the laser interferometer 12Y used to calculate the unevenness amount ΔY (x) of the reflection surface MwY, By performing correction / calculation as in (4), the surface shape DY1 (x) of the reflecting surface MwY is obtained.

In the main control system 20, the calculation of the above equation (4) is performed every time the data θY (x) and Xθ (x) are sampled, and the unevenness amount DY1 (x) of the reflecting surface MwY corresponding to each sampling point is stored in the memory. Store in MRY.

  At this time, it is assumed that the final sampling data to be subjected to the calculation of the above formula (4) is data corresponding to x = L. It is assumed that the time point when x = L coincides with the point where the wafer table WTB starts decelerating. Strictly speaking, the influence of the pitching amount must be taken into account.

  As described above, when measuring the surface shape of the reflecting surface MwY provided substantially along the X-axis direction, the wafer table WTB is moved to a plurality of positions in the X-axis direction, and a plurality of positions corresponding to the plurality of positions are measured. By measuring information, the surface shape of the reflective surface MwY can be measured. As described above, a plurality of beams substantially parallel to the Y-axis direction are reflected from the laser interferometer 12Y for measuring positional information of the wafer table WTB while the wafer table WTB is moving in the X-axis direction. By irradiating MwY and receiving the reflected light from the reflecting surface MwY, the main control system 20 can efficiently measure the surface shape of the reflecting surface MwY based on the light reception result of the receiver.

  Next, as shown in FIG. 7, main control system 20 moves wafer table WTB in the -Y direction from intermediate position PSTM to final position PSTL while monitoring the measurement values of laser interferometers 12X and 12Y. To do. In this case as well, acceleration is performed after the start of movement, constant speed movement, and deceleration immediately before the end of movement are performed. In this case, the acceleration region and the deceleration region are few, and most of them are constant velocity regions. The surface shape of the reflective surface MwX can also be measured by the same method as the surface shape of the reflective surface MwY described above.

(Method for calculating strain data of wafer table WTB)
Next, since the surface shape of the reflecting surface is obtained, transfer exposure of the wafer W is started. Each time one wafer W is exposed, the deformation amount of the wafer table WTB is calculated by a strain gauge. An example of calculating the deformation amount, that is, distortion data will be described with reference to FIG.

  In FIG. 9, it is assumed that distortion data ΔYp in the Y direction at the point p in the X direction is obtained. Further, the broken line shows a part of the wall surface and the rib of the wafer table WTB, and the solid line shows the part of the wall surface and the rib of the wafer table WTB in a state after being deformed by thermal expansion. It is a thing. The reflection surface MwY is formed on this wall surface, and the beam of the laser interferometer 12Y is projected thereon. A plurality (n) of strain gauges 45 are attached to the back surface of wafer table WTB. In FIG. 9, three strain gauges 45 for detecting the deformation amount in the Y direction are depicted. The strain gauges 45 are affixed at predetermined positions, each of which relates to strain data in the Y direction at the point p in the X direction. For example, the output signal of the strain gauge 45 that measures the deformation amount in the Z direction also affects the strain data ΔYp. The influence of each strain meter 45 on the p point is defined as a coefficient Kp. The output of each strain gauge 45 is set as a strain amount Sm (m is an integer of 1 to n). Then, it can be expressed by the following formula (5).

The coefficient Kp is obtained for each point according to the position where the strain gauge 45 is pasted, the measurement direction (X direction, Y direction, or Z direction) of the strain gauge 45 by a finite analysis method or analysis by experiment.
Since the surface shape DY1 (x) of the reflecting surface MwY is obtained by the equation (4), the current net surface shape MDY1 (x) can be obtained by the equation (6) by subtracting the distortion data ΔYp. .
MDY1 (x) = DY1 (x) −ΔY (x) (6)

(Transfer exposure using distortion data)
Next, an example of a flow of transfer exposure using distortion data will be described with reference to FIG.
In step 102, the wafer table WTB is moved in the X or Y direction while a beam is emitted from the laser interferometers 12X and 12Y to the reflecting surface MwX or the reflecting surface MwY in order to investigate the state of the wafer table WTB before the thermal deformation.

In step 104, the surface shape of the reflecting surface MwX or the reflecting surface MwY is calculated from the position information acquired by the laser interferometers 12X and 12Y.
In step 106, the first wafer of the lot is placed on the wafer table WTB, moved to below the projection optical system PL, and the pattern of the reticle R is transferred and exposed onto the wafer W. In step 108, power is supplied to the strain gauge 45 and the transmission / reception unit 47 in a non-contact manner via the power supply unit 48 and the power reception unit 46. This power supply is always performed during transfer exposure.
In step 110, strain data of the strain gauge is detected at every sampling cycle (for example, every transfer number shot, every fixed time, or every wafer). The detected distortion data is transmitted from the transmission unit to the correction unit.
In step 112, the correction unit in the calculation unit 92 calculates distortion data from the distortion amount, and adds the distortion data to the surface shape of the reflection surface MwX or the reflection surface MwY. As described with reference to FIG. 4, a correction unit may be provided in wafer table WTB, and the calculated distortion data may be sent from signal transmission / reception unit 47 to fixed-side signal transmission / reception unit 49.
In step 114, the pattern of the reticle R is transferred and exposed to the wafer W using a value obtained by adding distortion data to the surface shape of the movable mirror.

  In addition, this invention is not limited to the above-mentioned embodiment, Of course, a various structure can be taken in the range which does not deviate from the summary of this invention. Although the wafer stage has been described, it should be understood that the present invention can be applied to a reticle stage. The strain gauge 45 may be attached to the surface plate 31 instead of the wafer table WTB. This is because the position of the laser interferometer system 12 changes when the surface plate 31 is deformed.

An amount related to deformation in the Z direction of the moving table or the surface plate may be detected, and a measurement result of position information (for example, focus position) of the moving table (wafer surface) may be corrected based on the detection result. . For example, a configuration in which a moving mirror is provided on the moving table in order to measure the position of the moving table in the Z direction with an interferometer may be employed. However, in the case of the interferometer used for measuring the position in the X and Y directions described above In the same manner as described above, the influence of the deformation of the movable mirror for the Z direction can be suppressed.
Further, although the strain gauge is used as the deformation amount detection unit, the present invention is not limited to this, and other means may be used as long as the amount related to deformation can be measured.

  The moving mirror Mr for the reticle stage may include not only a plane mirror but also a corner cube (retro reflector). Instead of fixing the moving mirror to the reticle stage, for example, the end surface (side surface) of the reticle stage is mirror-finished. A reflective surface formed in this manner may be used. The reticle stage may be configured to be capable of coarse and fine movement disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).

  Details of the configuration in which the wafer stage laser interferometer 12 measures the position of the wafer stage in the Z-axis direction and the rotation information in the θX and θY directions are disclosed in, for example, JP-T-2001-510577 (corresponding to International Publication No. 1999/28790). No. pamphlet). Instead of fixing the movable mirror to the wafer stage, for example, a reflecting surface formed by mirror processing a part (side surface, etc.) of the wafer stage may be used.

  When the laser interferometer 12 can measure the position information of the wafer W in the Z-axis, θX, and θY directions, the focus sensor 23A can measure the position information in the Z-axis direction during the exposure operation of the wafer W. , 23B may not be provided, and the position control of the wafer W in the Z axis, θX, and θY directions may be performed using the measurement result of the laser interferometer 12 at least during the exposure operation.

  Note that the present invention can be applied to an exposure apparatus and an exposure method that do not use the projection optical system PL. Even when the projection optical system is not used, the exposure light is irradiated onto the wafer through an optical member such as a reticle or a lens.

Furthermore, the present invention can be applied to, for example, an immersion type exposure apparatus. In the immersion type exposure apparatus, there is a possibility that the wafer or the wafer table holding the wafer is deformed by the influence of the weight of the liquid. Even in such a case, according to the present invention, it is possible to suppress the influence of the liquid by measuring the amount related to the deformation of the moving table.
The immersion exposure apparatus is disclosed in International Publication No. 99/49504 pamphlet. Further, in the present invention, the entire surface of the substrate to be exposed as disclosed in JP-A-6-124873, JP-A-10-303114, US Pat. No. 5,825,043 and the like is in the liquid. The present invention is also applicable to an immersion exposure apparatus that performs exposure while being immersed.

  The substrate of each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus ( Synthetic quartz, silicon wafer) or the like is applied.

  The exposure apparatus includes a step-and-repeat type projection exposure apparatus (stepper) that collectively exposes the pattern of the reticle R while the reticle (mask) R and the wafer W are stationary, and sequentially moves the wafer W stepwise. In addition, the present invention can also be applied to a scanning exposure apparatus (scanning stepper) of a step-and-scan method in which the reticle R and the wafer W are moved synchronously to scan and expose the pattern of the reticle R. Further, the exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the wafer W, and the wafer W is sequentially moved.

  The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of wafer stages. The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to a stage apparatus disclosed in International Publication No. 2005/122242 pamphlet.

  Further, as disclosed in JP-A-11-135400 (corresponding international publication 1999/23692) and JP-A-2000-164504 (corresponding US Pat. No. 6,897,963), a substrate for holding a substrate. The present invention can also be applied to an exposure apparatus including a stage and a reference member on which a reference mark is formed and a measurement stage on which various photoelectric sensors are mounted.

  The type of the exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate, but an exposure apparatus for manufacturing a liquid crystal display element or a display such as a plasma display, a thin film magnetic head, an image sensor ( (CCD), micromachine, MEMS, DNA chip, or an exposure apparatus for manufacturing a reticle or mask. The present invention can also be applied to a projection exposure apparatus that uses extreme ultraviolet light (EUV light) having a wavelength of about several nm to 100 nm as an exposure light source.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, an electronic mask (also referred to as a variable shaping mask, for example, a non-uniform mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. A DMD (Digital Micro-mirror Device) that is a kind of light-emitting image display element (spatial light modulator) may be used.

  Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line and space pattern on a substrate by forming interference fringes on the substrate. The present invention can be applied.

  Further, as disclosed in, for example, Japanese translations of PCT publication No. 2004-51850 (corresponding US Pat. No. 6,611,316), two mask patterns are synthesized on a substrate via a projection optical system, and 1 The present invention can also be applied to an exposure apparatus that performs double exposure of one shot area on a substrate almost simultaneously by multiple scan exposures.

  The exposure apparatus according to the present embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 11, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for manufacturing a mask (reticle) based on the design step, and a substrate as a substrate of the device. Substrate processing processes such as step 203, an exposure process of exposing the mask pattern onto the substrate by the exposure apparatus of the above-described embodiment, a process of developing the exposed substrate, heating (curing) of the developed substrate, and an etching process. It is manufactured through a step 204 including a device assembly step (including processing processes such as a dicing process, a bonding process, and a package process) 205, an inspection step 206, and the like.

  The stage device can constantly monitor the deformation of the surface plate, the table unit, and / or the movable mirror itself. For this reason, it is not necessary to measure the surface shape (unevenness) of the movable mirror for each lot (several tens). Therefore, there is no need to interrupt the transfer exposure, and productivity can be improved. Further, it is not necessary to interrupt the transfer exposure, and productivity can be improved. Also, if the table part etc. is greatly deformed in the middle of a lot, the stage will move while the subsequent position accuracy is poor. However, since distortion data is constantly measured, such a problem also arises. Absent.

Claims (23)

An exposure apparatus for forming a predetermined pattern on a substrate,
An optical member through which exposure light passes;
A base having a guide surface;
A substrate table that holds the substrate and moves relative to the optical member along the guide surface without contact with the guide surface;
A position information detection device for obtaining information about the position of the substrate table while the substrate table is moving;
A shape information detection device that is provided on the back side of the holding surface for holding the substrate in the substrate table and obtains information on the shape of the substrate table;
A power transmission device that transmits power to the shape information detection device in a non-contact manner, and receives information on the shape from the shape information detection device in a non-contact manner while the substrate table is moving;
Information related to the position of the substrate table, which is sent from the position information detection device when the substrate table is moving , connected to the position information detection device and the power transmission device, and the substrate table moves. A control device for driving the substrate table by generating a signal for controlling the position of the substrate table using the information on the shape of the substrate table sent from the shape information detection device when An exposure apparatus.   2. The exposure apparatus according to claim 1, wherein the substrate is illuminated by the exposure light through a liquid in a space between the substrate and the optical member.   3. The exposure apparatus according to claim 2, wherein the information related to the shape of the substrate table is a deformation of the substrate table caused by the weight of the liquid. A device manufacturing method using an exposure process for projecting a predetermined pattern formed on a reticle onto a substrate,
Supporting the substrate with a substrate table;
Supporting the substrate table on the guide surface in a non-contact manner, and moving the substrate table along the guide surface;
Obtaining information on the position of the substrate table by a position information detection device during movement of the substrate table;
Obtaining information on the shape of the substrate table by a detection unit provided on the back side of the holding surface for holding the substrate in the substrate table during the movement of the substrate table;
Supplying electric power to the detection unit in a non-contact manner;
Transmitting non-contact information on the shape of the substrate table from the detection unit to the control device;
Information on the position of the substrate table sent from the position information detection device when the substrate table is moving, and the shape of the substrate table sent from the detection unit when the substrate table is moving Generating a signal for controlling the position of the substrate table using the information about, and driving the substrate table;
A device manufacturing method comprising: moving the reticle in synchronization with the movement of the substrate table; and irradiating the substrate with exposure light from an optical member.   The device manufacturing method according to claim 4, further comprising supplying a liquid to a space between the optical member supported by the substrate table and illuminated from the optical member through the liquid.   6. The device manufacturing method according to claim 5, wherein the information related to the shape of the substrate table includes deformation of the substrate table caused by the weight of the liquid. An exposure apparatus that exposes a substrate by irradiating the substrate with an energy beam via a projection optical system,
A substrate table that moves relative to the projection optical system while holding the substrate;
A first portion provided on the substrate table; and a second portion movable with respect to the first portion. The position of the substrate table is related to the cooperation between the first portion and the second portion. A position information detecting device for obtaining information;
A shape detection device that is provided on the back side of the holding surface for holding the substrate in the substrate table and obtains information on the shape of the substrate table or the first portion;
A transmission device that transmits power in a non-contact manner to the shape detection device during movement of the substrate table;
While communicating with the position information detection device and the transmission device, information about the position of the substrate table obtained by the position information detection device when the substrate table is moving, and the substrate table is moved A driving device for driving the substrate table based on the information on the shape obtained by the shape detection device when
An exposure apparatus. The shape detection device transmits information on the obtained shape in a non-contact manner,
The exposure apparatus according to claim 7, wherein the transmission device receives information on the shape obtained by the shape detection device in a non-contact manner while the substrate table is moving.   The second part includes a third part and a fourth part that supports the third part, and a measuring beam for obtaining information on the position between the first part and the third part. The exposure apparatus according to claim 8, wherein an optical path is formed.   The exposure apparatus according to claim 9, wherein the fourth portion has a guide surface on which the substrate table is movably provided.   The exposure apparatus according to claim 9, wherein the information related to the shape includes information related to a shape of a surface formed on the first portion irradiated with the light beam.   The exposure apparatus according to claim 7, further comprising a second substrate table that is movable independently of the substrate table while the substrate is placed. A liquid is supplied to a space between the substrate and the projection optical system;
The exposure apparatus according to claim 7, wherein the substrate is exposed with an energy beam through the projection optical system and the liquid.   8. A device assembly method comprising a lithography process, wherein a device pattern is transferred to a substrate by the exposure apparatus according to claim 7 in the lithography process. An exposure method for exposing a substrate by irradiating an energy beam through a projection optical system,
Moving the substrate table relative to the projection optical system in a state where the substrate is placed on the substrate table;
A position information detecting device having a first part provided on the substrate table and a second part movable with respect to the first part, wherein the first part and the second part cooperate with each other. Obtaining information about the position of the substrate table;
Obtaining information on the shape of the substrate table or the first portion using a shape detection device provided on the back side of the holding surface for holding the substrate in the substrate table during the movement of the substrate table ;
Supplying contactless power to the shape detection device; and
A control device connected to the position information detection device and the transmission device; information about the position of the substrate table sent from the position information detection device when the substrate table is moving; Using the information about the shape of the substrate table sent from the shape detection device when moving, generating a signal for controlling the position of the substrate table, and driving the substrate table;
An exposure method comprising: The exposure method according to claim 15 , further comprising transmitting information on the shape obtained by the shape detection device by a non-contact method. The second part includes a third part and a fourth part that supports the third part, and a measuring beam for obtaining information on the position between the first part and the third part. The exposure method according to claim 16, wherein an optical path is formed. The exposure method according to claim 17 , wherein the fourth portion has a guide surface on which the substrate table is movably provided. 18. The exposure method according to claim 17 , wherein the information related to the shape includes information related to a shape of a surface formed on the first portion irradiated with the light beam. 16. The method according to claim 15 , further comprising driving the substrate table based on information on the position of the substrate table obtained by the position information detection device and information on the shape obtained by the shape detection device. Exposure method. The exposure method according to claim 15 , further comprising moving the substrate using a second substrate table movable independently of the substrate table. A liquid is supplied to a space between the substrate and the projection optical system;
The exposure method according to claim 15 , wherein the substrate is exposed with an energy beam through the projection optical system and the liquid. 16. A device assembly method comprising a lithography step, wherein a device pattern is transferred to a substrate by the exposure method according to claim 15 in the lithography step.