JP5008357B2 - 表示装置の作製方法 - Google Patents
表示装置の作製方法 Download PDFInfo
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- JP5008357B2 JP5008357B2 JP2006216399A JP2006216399A JP5008357B2 JP 5008357 B2 JP5008357 B2 JP 5008357B2 JP 2006216399 A JP2006216399 A JP 2006216399A JP 2006216399 A JP2006216399 A JP 2006216399A JP 5008357 B2 JP5008357 B2 JP 5008357B2
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- electrode layer
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- insulating
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Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Description
本実施の形態における表示装置の作製方法を、図1を用いて詳細に説明する。
本実施の形態における表示装置の作製方法を、図2を用いて詳細に説明する。本実施の形態では、実施の形態1と隔壁となる絶縁層の構造が異なる例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本実施の形態における表示装置の作製方法を、図5乃至図10、図16、図17を用いて詳細に説明する。
本発明の実施の形態を、図8乃至図10を用いて説明する。本実施の形態は、実施の形態3で作製した表示装置において、第2の層間絶縁層(絶縁膜181及び絶縁膜182)を形成しない例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本発明を適用して発光素子を有する表示装置を形成することができるが、該発光素子から発せられる光は、下方放射、上方放射、両方放射のいずれかを行う。本実施の形態では、両方放射型、上方放射型の例を、図14及び図15を用いて説明する。
本発明の実施の形態を、図13を用いて説明する。本実施の形態は、実施の形態1で作製した表示装置において、薄膜トランジスタのゲート電極層の構造が異なる例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本発明の実施の形態を、図11を用いて説明する。本実施の形態は、実施の形態3で作製した表示装置において、薄膜トランジスタをチャネルエッチ型逆スタガ型薄膜トランジスタを用い、第1の層間絶縁層及び第2の層間絶縁層を形成しない例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
走査線側入力端子部と信号線側入力端子部とに保護ダイオードを設けた一態様について図24を参照して説明する。図24において画素2702にはTFT501、TFT502、容量素子504、画素電極層503が設けられている。
本発明によって形成される表示装置によって、テレビジョン装置を完成させることができる。図25はテレビジョン装置(本実施の形態ではELテレビジョン装置)の主要な構成を示すブロック図を示している。表示パネルには、図16(A)で示すような構成として画素部のみが形成されて走査線側駆動回路と信号線側駆動回路とが、図17(B)のようなTAB方式により実装される場合と、図17(A)のようなCOG方式により実装される場合と、図16(B)に示すようにSASでTFTを形成し、画素部と走査線側駆動回路を基板上に一体形成し信号線側駆動回路を別途ドライバICとして実装する場合、また図16(C)のように画素部と信号線側駆動回路と走査線側駆動回路を基板上に一体形成する場合などがあるが、どのような形態としても良い。
本実施の形態を図21を用いて説明する。本実施の形態は、実施の形態3乃至7で作製する表示装置を有するパネルを用いたモジュールの例を示す。
本実施の形態を図22を用いて説明する。図22は、この実施の形態10で作製するモジュールを含む無線を用いた持ち運び可能な小型電話機(携帯電話)の一態様を示している。パネル900はハウジング981に脱着自在に組み込んでモジュール999と容易に組み合わせできるようにしている。ハウジング981は組み入れる電子機器に合わせて、形状や寸法を適宜変更することができる。
本発明を適用して、様々な表示装置を作製することができる。即ち、それら表示装置を表示部に組み込んだ様々な電子機器に本発明を適用できる。
本発明の発光素子には本実施の形態では、本発明の発光素子に適用することのできる他の構成を、図28及び図29を用いて説明する。
Claims (6)
- 半導体層、ゲート絶縁層、ゲート電極層、ソース電極層及びドレイン電極層を有するトランジスタと、前記トランジスタに電気的に接続する第1の電極層とを形成し、
前記第1の電極層の一部、及び前記トランジスタ上に無機絶縁層を形成し、
前記無機絶縁層及び前記第1の電極層に窒素雰囲気下で窒化プラズマ処理を行い、前記プラズマ処理を行った前記無機絶縁層及び前記第1の電極層上に有機化合物材料を含む層を形成し、
前記有機化合物材料を含む層上に第2の電極層を形成することを特徴とする表示装置の作製方法。 - 半導体層、ゲート絶縁層、ゲート電極層、ソース電極層及びドレイン電極層を有するトランジスタと、前記トランジスタに電気的に接続する第1の電極層とを形成し、
前記第1の電極層、及び前記トランジスタ上に無機絶縁膜を形成し、
前記無機絶縁膜をエッチングし、前記第1の電極層に達する開口有する無機絶縁層を形成し、
前記無機絶縁層及び前記第1の電極層に窒素雰囲気下で窒化プラズマ処理を行い、前記プラズマ処理を行った前記無機絶縁層及び前記第1の電極層上に有機化合物材料を含む層を形成し、
前記有機化合物材料を含む層上に第2の電極層を形成することを特徴とする表示装置の作製方法。 - 半導体層、ゲート絶縁層、ゲート電極層、ソース電極層及びドレイン電極層を有するトランジスタと、前記トランジスタに電気的に接続する第1の電極層とを形成し、
前記第1の電極層の一部、及び前記トランジスタ上に第1の無機絶縁層及び第2の無機絶縁層を積層して形成し、
前記第1の無機絶縁層、前記第2の無機絶縁層及び前記第1の電極層に窒素雰囲気下で窒化プラズマ処理を行い、前記プラズマ処理を行った前記第1の無機絶縁層、前記第2の無機絶縁層及び前記第1の電極層上に有機化合物材料を含む層を形成し、
前記有機化合物材料を含む層上に第2の電極層を形成することを特徴とする表示装置の作製方法。 - 半導体層、ゲート絶縁層、ゲート電極層、ソース電極層及びドレイン電極層を有するトランジスタと、前記トランジスタに電気的に接続する第1の電極層とを形成し、
前記第1の電極層、及び前記トランジスタ上に第1の無機絶縁膜及び第2の無機絶縁膜を積層して形成し、
前記第1の無機絶縁膜及び前記第2の無機絶縁膜をエッチングし、前記第1の電極層に達する開口を有する第1の無機絶縁層及び第2の無機絶縁層を形成し、
前記第1の無機絶縁層、前記第2の無機絶縁層及び前記第1の電極層に窒素雰囲気下で窒化プラズマ処理を行い、前記プラズマ処理を行った前記第1の無機絶縁層、前記第2の無機絶縁層及び前記第1の電極層上に有機化合物材料を含む層を形成し、
前記有機化合物材料を含む層上に第2の電極層を形成することを特徴とする表示装置の作製方法。 - 請求項1乃至4のいずれか一項において、
前記ソース電極層及び前記ドレイン電極層と同一工程で配線層を形成し、
前記配線層に対し、前記窒化プラズマ処理を行うことを特徴とする表示装置の作製方法。 - 請求項3または4において、
前記第1の無機絶縁層は、前記第2の無機絶縁層と異なるテーパー角を有していることを特徴とする表示装置の作製方法。
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