JP4970997B2 - ナノワイヤトランジスタの製造方法 - Google Patents
ナノワイヤトランジスタの製造方法 Download PDFInfo
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- JP4970997B2 JP4970997B2 JP2007072887A JP2007072887A JP4970997B2 JP 4970997 B2 JP4970997 B2 JP 4970997B2 JP 2007072887 A JP2007072887 A JP 2007072887A JP 2007072887 A JP2007072887 A JP 2007072887A JP 4970997 B2 JP4970997 B2 JP 4970997B2
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- 239000002070 nanowire Substances 0.000 title claims description 204
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 230000003647 oxidation Effects 0.000 claims description 33
- 238000007254 oxidation reaction Methods 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 73
- 239000000758 substrate Substances 0.000 description 72
- 238000000034 method Methods 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000011258 core-shell material Substances 0.000 description 22
- 239000004033 plastic Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005401 electroluminescence Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
"High performance thin film transistors using semiconductor nanowires and nanoribbons", Nature, vol.425, 2003, pp.274.
以下、本発明によるナノワイヤトランジスタの第1の実施形態を説明する。
次に、図8(a)及び(b)を参照しながら、本発明によるナノワイヤトランジスタの第2の実施形態を説明する。図8(a)は、本実施形態のナノワイヤトランジスタの構成を模式的に示す上面図であり、図8(b)は、そのD−D’線断面図である。
次に、図12(a)及び(b)を参照しながら、本発明によるナノワイヤトランジスタの第3の実施形態を説明する。図12(a)は、本実施形態のナノワイヤトランジスタの構成を模式的に示す上面図であり、図12(b)は、そのE−E’線断面図である。
図14及び図15を参照しながら、本発明によるナノワイヤトランジスタを備えるディスプレイの実施形態を説明する。本実施形態のディプレイは、有機エレクトロルミネッセンス素子(有機EL素子)を用いたディスプレイである。
2 ゲート電極
3 ナノワイヤ
4 ゲート絶縁膜
5 ソース電極
6 ドレイン電極
11 プラスティック基板
12 ゲート電極
13 コア・シェルナノワイヤ
13a 半導体コア部分
13b 絶縁性シェル部分
14 ソース電極
15 ドレイン電極
16 レジスト
17 ゲート金属
20 溝
21 モールド
22 レーザー光
23 埋め込みソース電極
24 埋め込みドレイン電極
40 フレキシブル基板
41 Xドライバ
42 Yドライバ
43 X走査電極
44 Y走査電極
45 画素
50 スイッチ用トランジスタ
51 ドライバ用トランジスタ
Claims (2)
- チャネル領域として機能するコア部分と、前記コア部分の表面を被覆する絶縁性シェル部分とを有する少なくとも1本のナノワイヤを用意する工程と、
前記ナノワイヤに接続されるソース電極及びドレイン電極、及び前記ナノワイヤにおけるコア部分の少なくとも一部における導電性を制御するゲート電極を形成する工程と、
を備えるナノワイヤトランジスタの製造方法であって、
前記ナノワイヤを用意する工程は、
Siを含有する半導体単結晶から形成され、その長軸方向を横切る断面が多角形のナノワイヤ素材を形成する結晶成長工程と、
前記ナノワイヤ素材の表面を熱酸化することにより、前記表面に前記絶縁性シェル部分を形成する熱酸化工程と、
を含み、
前記熱酸化工程は、前記コア部分の長軸方向を横切る断面の輪郭が曲線になるように前記ナノワイヤ素材の表面を熱酸化する、ナノワイヤトランジスタの製造方法。 - 前記ナノワイヤ素材の直径は35nm以上であり、
前記熱酸化工程では、前記絶縁性シェル部分の厚さが15nm以上になるまで熱酸化を行う、請求項1に記載のナノワイヤトランジスタの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007072887A JP4970997B2 (ja) | 2006-03-30 | 2007-03-20 | ナノワイヤトランジスタの製造方法 |
US13/399,521 US8368049B2 (en) | 2006-03-30 | 2012-02-17 | Nanowire transistor and method for fabricating the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006093760 | 2006-03-30 | ||
JP2006093760 | 2006-03-30 | ||
JP2007072887A JP4970997B2 (ja) | 2006-03-30 | 2007-03-20 | ナノワイヤトランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294908A JP2007294908A (ja) | 2007-11-08 |
JP4970997B2 true JP4970997B2 (ja) | 2012-07-11 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007072887A Expired - Fee Related JP4970997B2 (ja) | 2006-03-30 | 2007-03-20 | ナノワイヤトランジスタの製造方法 |
Country Status (2)
Country | Link |
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US (1) | US8368049B2 (ja) |
JP (1) | JP4970997B2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2891281B1 (fr) * | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
WO2008072479A1 (ja) * | 2006-12-13 | 2008-06-19 | Panasonic Corporation | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
KR101424816B1 (ko) * | 2008-02-18 | 2014-07-31 | 삼성전자주식회사 | 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법 |
KR101267222B1 (ko) | 2008-06-19 | 2013-05-23 | 경기대학교 산학협력단 | 나노와이어 트랜지스터와 이의 제조방법 |
KR101539669B1 (ko) | 2008-12-16 | 2015-07-27 | 삼성전자주식회사 | 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법 |
JP2012244088A (ja) * | 2011-05-24 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよびその製造方法 |
JP2013179274A (ja) * | 2012-02-09 | 2013-09-09 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよびその製造方法 |
US9412442B2 (en) * | 2012-04-27 | 2016-08-09 | The Board Of Trustees Of The University Of Illinois | Methods for forming a nanowire and apparatus thereof |
US11001497B2 (en) | 2012-12-13 | 2021-05-11 | George Mason University | High performance topological insulator transistors |
US9435896B2 (en) * | 2013-07-31 | 2016-09-06 | Globalfoundries Inc. | Radiation detector based on charged self-assembled monolayers on nanowire devices |
JP6046590B2 (ja) * | 2013-10-31 | 2016-12-21 | 日本電信電話株式会社 | 電界効果トランジスタの製造方法 |
US9129825B2 (en) | 2013-11-01 | 2015-09-08 | International Business Machines Corporation | Field effect transistor including a regrown contoured channel |
EP2887399B1 (en) * | 2013-12-20 | 2017-08-30 | Imec | A method for manufacturing a transistor device and associated device |
US10553718B2 (en) * | 2014-03-14 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with core-shell structures |
CN104124272B (zh) * | 2014-07-14 | 2017-09-26 | 华南师范大学 | 集成非极性GaN纳米线高电子迁移率晶体管及其制备方法 |
CN105118860B (zh) * | 2015-08-18 | 2018-05-08 | 华南师范大学 | 一种集成有序GaN基纳米线阵列HEMT及其制备方法 |
US9972649B2 (en) * | 2015-10-21 | 2018-05-15 | Massachusetts Institute Of Technology | Nanowire FET imaging system and related techniques |
KR101838913B1 (ko) * | 2015-12-30 | 2018-03-15 | 한국과학기술원 | 복수의 나노와이어를 가진 터널링 전계효과 트랜지스터 및 그의 제조 방법 |
CN108336128B (zh) * | 2017-01-20 | 2020-12-04 | 清华大学 | 薄膜晶体管 |
TWM564598U (zh) * | 2018-01-29 | 2018-08-01 | 永虹先進材料股份有限公司 | Oxidized fiber structure |
US11768262B2 (en) | 2019-03-14 | 2023-09-26 | Massachusetts Institute Of Technology | Interface responsive to two or more sensor modalities |
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JPS62290155A (ja) * | 1986-06-09 | 1987-12-17 | Seiko Epson Corp | 半導体装置の製造方法 |
EP2360298A3 (en) | 2000-08-22 | 2011-10-05 | President and Fellows of Harvard College | Method for depositing a semiconductor nanowire |
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AU2003277033A1 (en) | 2002-09-30 | 2004-04-23 | Nanosys, Inc. | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
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KR101043578B1 (ko) | 2002-09-30 | 2011-06-23 | 나노시스, 인크. | 나노와이어 트랜지스터를 사용하는 집적 디스플레이 |
JP2006512218A (ja) * | 2002-12-09 | 2006-04-13 | ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア | ナノチューブを製造する犠牲テンプレート方法 |
US20050253137A1 (en) | 2003-11-20 | 2005-11-17 | President And Fellows Of Harvard College | Nanoscale arrays, robust nanostructures, and related devices |
US7344961B2 (en) | 2004-07-07 | 2008-03-18 | Nanosys, Inc. | Methods for nanowire growth |
KR100585157B1 (ko) | 2004-09-07 | 2006-05-30 | 삼성전자주식회사 | 다수의 와이어 브릿지 채널을 구비한 모스 트랜지스터 및그 제조방법 |
TWI283066B (en) * | 2004-09-07 | 2007-06-21 | Samsung Electronics Co Ltd | Field effect transistor (FET) having wire channels and method of fabricating the same |
KR101137865B1 (ko) | 2005-06-21 | 2012-04-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판의 제조방법 및 이를 이용한 박막트랜지스터 기판 |
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