JP4751865B2 - Back-illuminated solid-state imaging device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a back-illuminated solid-state imaging device and a manufacturing method thereof, and more particularly to a back-illuminated solid-state imaging device and a manufacturing method thereof that can suitably avoid crosstalk and color mixing between pixels.

  Solid-state imaging devices such as a CMOS image sensor and a CCD image sensor include a front side illumination type and a back side illumination type. One side of a semiconductor substrate on which a signal readout circuit (a transistor circuit and wiring layer for a CMOS image sensor, a charge transfer path including wiring for a CCD image sensor), which is a main electronic element of an image sensor, is formed (this surface is The surface irradiation type is the same plane as “front side” and has a structure for receiving incident light from a subject.

  On the other hand, the back-illuminated type, as described in, for example, Patent Document 1 below, receives incident light from a subject on a surface (= back surface) opposite to the front surface side of the semiconductor substrate on which the signal readout circuit is formed. A structure that receives light.

  That is, the backside illumination type solid-state imaging device has a number of photodiodes formed in a two-dimensional array on the front side of the semiconductor substrate and a signal readout circuit that reads out the captured image signal detected by each photodiode. In addition, a color filter and a microlens are formed, and the photocharge generated by the light incident on the semiconductor substrate from the back side is captured by the photodiode on the front side, and the signal readout circuit outputs this photocharge. .

  This back-illuminated type can increase the aperture ratio because there is no need to provide a signal readout circuit on the back side, and can increase the thickness of the semiconductor substrate, so that almost all of the incident light energy can be photoelectrically converted. There is an advantage of sensitivity.

JP 2006-80457 A

  The back-illuminated solid-state imaging device has a configuration in which the front-side photodiode receives the field light incident from the back side, so that color filters and microlenses provided for each photodiode are aligned with the photodiode. If not formed, obliquely incident light enters adjacent pixels (photodiodes), and crosstalk, color mixing, and the like occur.

  However, even if the color filters and microlenses are aligned with the photodiode, the back-illuminated solid-state image sensor has a thick semiconductor substrate and a long optical path length to increase the photoelectric conversion efficiency. There is a problem that enters the adjacent pixels.

  In the prior art described in Patent Document 1, by forming a recess for each pixel by etching a wide area directly under the microlens of the semiconductor substrate for each pixel, and forming a reflective film on the inner peripheral surface of this recess, All the light condensed by the microlens is incident on the corresponding photodiode.

  However, in this prior art, since the inside of the recess is filled with a transparent insulating layer, the inside of the recess does not contribute to photoelectric conversion, and color mixing is prevented at the expense of the advantage of the backside illumination type.

  An object of the present invention is to provide a back-illuminated solid-state imaging device that can suitably suppress the entrance of obliquely incident light into adjacent pixels and has high photoelectric conversion efficiency, and a method for manufacturing the same.

A backside illumination type solid-state imaging device according to the present invention includes a semiconductor substrate and a plurality of signal charges formed in a two-dimensional array on the surface side of the semiconductor substrate and photoelectrically converted by light incident from the back side of the semiconductor substrate. A high-concentration impurity layer that is formed on the back surface side and attracts charges generated in pairs with the signal charges by the photoelectric conversion, and the high-concentration impurity layer is at least partially continuous between adjacent photodiodes. And a light shielding member that is embedded in the high-concentration impurity layer and partitions incident light on each photodiode from the adjacent photodiode.

In the manufacturing method of the backside illumination type solid-state imaging device of the present invention, a plurality of photodiodes are formed in a two-dimensional array on the front side, and signal charges photoelectrically converted by light incident from the back side are accumulated in the photodiodes. Forming a high-concentration impurity layer on the back side of the semiconductor substrate that attracts the charge generated in pairs with the signal charge by the photoelectric conversion; A boundary position partitioned from the diode is cut by etching, and a light shielding material is embedded in the high concentration impurity layer at the boundary position so that the high concentration impurity layer is at least partially continuous between adjacent photodiodes. To do.

  The method for manufacturing a backside illumination type solid-state imaging device according to the present invention is characterized in that the light shielding member is formed of a conductive material, and the light shielding member is embedded with an insulating film covered in the high concentration impurity layer. To do.

Back-illuminated solid-state imaging device and its manufacturing method of the present invention, the light blocking member is formed of a conductive material, the light blocking member in direct contact with the high concentration impurity layer is formed by penetrating the said high concentration impurity layer It is characterized by that.

The back-illuminated solid-state imaging device and the method of manufacturing the same according to the present invention are such that the light-shielding member is embedded in a depth of penetration through the high-concentration impurity layer, and the light-shielding member is divided in the light incident direction. It is characterized in that a partial deficient portion is provided in which the high-concentration impurity layer is continued between adjacent pixels so that no portion is generated .

  The backside illumination type solid-state imaging device and the manufacturing method thereof according to the present invention are characterized in that the light shielding member is formed to protrude from the backside.

  The backside illuminated solid-state imaging device and the manufacturing method thereof according to the present invention are characterized in that an insulating film and an antireflection film are formed on the surface on the backside.

  The backside illumination type solid-state imaging device and the manufacturing method thereof according to the present invention are characterized in that the antireflection film is divided by the light shielding member.

  The backside illumination type solid-state imaging device and the method of manufacturing the same according to the present invention are characterized in that the tip of the backside of the light shielding member is tapered.

  In the backside illumination type solid-state imaging device of the present invention, a predetermined voltage is applied to the light shielding member.

  The back-illuminated solid-state imaging device and the manufacturing method thereof according to the present invention are characterized in that a circuit for applying the predetermined voltage is provided in a peripheral portion of the semiconductor substrate.

  According to the present invention, since the light shielding member provided in the pixel partition portion of the back surface pixel is embedded in the semiconductor substrate, the light shielding member having a long length in the light incident direction can be formed, and the light shielding performance is improved. It becomes possible to plan. Moreover, in this invention, since the part used as the photoelectric conversion area | region of a semiconductor substrate is not shaved in the thickness direction, a high photoelectric conversion rate can be obtained.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view of a backside illumination type solid-state imaging device 100 according to an embodiment of the present invention. The solid-state imaging device of this embodiment is an interline CCD, and a vertical charge transfer path (VCCD) 21 and a photodiode (photoelectric conversion device) 22 are formed on the front surface side of the p-type semiconductor substrate 1, and on the back surface side. A color filter (red (R), green (G), blue (B)) layer 23 and a microlens 24 are laminated.

  Each color filter 23 is stacked at a position aligned with the corresponding photodiode 22, and each microlens 24 is formed aligned with the photodiode 22 so as to be focused on the center of the corresponding photodiode 22.

  Although the backside illumination type solid-state imaging device 100 of this embodiment is a CCD type, the present embodiment can be similarly applied to a CMOS type or other type of solid-state imaging device as described in Patent Document 1.

A high-concentration p layer (p ⁺⁺ layer) 25 is formed on the rear surface side surface portion of the semiconductor substrate 1, and the p layer 25 is grounded. An insulating layer (for example, an oxide film) 26 that is transparent to incident light is laminated on the high-concentration p layer 25, and a high refractive index that is transparent to incident light such as silicon nitride or a diamond structure carbon film is formed thereon. The rate layer 27 is stacked as an antireflection film, and the color filter layer 23 and the microlens (top lens) layer 24 are sequentially stacked thereon.

  The color filter layer 23 is partitioned in units of pixels (photodiodes), and a light shielding member 28 described later in detail is provided between adjacent partitions on the semiconductor substrate 1 side of the color filter layer 23. The light shielding member 28 is provided to prevent obliquely incident light from entering adjacent pixels, and is configured to reflect incident light on the light shielding member with a tungsten film, an aluminum film, or the like, or incident on the light shielding member. It is formed of a material that absorbs light (in this embodiment, a tungsten film is used).

  FIG. 2 is a diagram showing a state in which the light shielding member 28 is viewed from the back side, and is formed in a mesh shape as a whole, and each mesh defines one pixel and one pixel. By providing this light shielding member 28, in the solid-state image pickup device for color image pickup of a single plate, color mixing between adjacent pixels that detect different colors is suppressed, and in the solid-state image pickup device for color pickup of a multi-plate color image, signals of the same color are detected. Crosstalk between adjacent pixels is suppressed.

  A vertical charge transfer path (VCCD) 21 formed on the front surface side of the semiconductor substrate 1 includes a buried channel 31 of a high concentration n layer and a silicon oxide film or ONO (oxide film) formed on the outermost surface side of the semiconductor substrate 1. (Transfer electrode film 33) laminated with a gate insulating layer 32 made of an insulating film of (nitride film-oxide film) structure.

  The vertical charge transfer path 21 is formed so as to extend in a direction perpendicular to a direction in which a horizontal charge transfer path (HCCD) (not shown) extends, and a plurality of vertical charge transfer paths 21 are formed. A plurality of photodiodes 22 are formed between adjacent vertical charge transfer paths 21 in a direction along the vertical charge transfer path 21 at a predetermined pitch.

In this embodiment, the photodiode 22 includes an n layer 35 formed on the surface side of the p-type semiconductor substrate 1 and an n ⁻ layer 36 formed thereunder. A thin p-type high-concentration surface layer 38 for suppressing dark current is formed on the surface portion of the n layer 35, and an n ⁺ layer 39 is formed as a contact portion on the central surface portion of the surface layer 38.

A p layer 41 having a higher p concentration than the substrate 1 is formed under the buried channel (n ⁺ layer) 31 of the vertical charge transfer path 21, and the n layer 31 and the p layer 41 are adjacent to the right side in the illustrated example. A p ⁺ region 42 as an element isolation band is formed between the first photodiode 22 and the second photodiode 22. Under each p layer 41, a p ⁻ region 42 having a higher concentration than that of the semiconductor substrate 1 is provided, and element isolation between adjacent photodiodes 22 is achieved. Each p ⁻ region 42 is provided at a location corresponding to the pixel partition portion, that is, the light shielding member 28 described above.

The p layer 41 formed below the buried channel 31 of the vertical charge transfer path 21 extends to the top of the surface end of the n layer 35 adjacent to the left in the illustrated example, and the p ⁺ surface layer 38 at this end is The position is set back from the position of the right end surface of the n layer 35. The left end surface of the transfer electrode film 33 extends so as to overlap the left end surface of the p layer 41, and the n layer 35 and the surface end portions of the transfer electrode film 33 and the p layer 41 slightly overlap. It has become.

  Such an overlap configuration is possible because the back-illuminated type has an area margin on the front surface side of the semiconductor substrate 1. In the front-illuminated type in which incident light from the subject is incident from the side where the photodiode and signal readout circuit are provided, there is no area margin, so the end of the transfer electrode film reaches the position where it matches the end of the photodiode. However, the p layer cannot be interposed between them.

  If the p layer 41 is interposed between the transfer electrode film 33 and the n layer 35 as in this embodiment, the read voltage applied to the transfer electrode film (also used as the read electrode) 33 can be reduced. Thus, it is possible to reduce the power consumption of the CCD solid-state imaging device.

A transfer electrode film 33 made of, for example, a polysilicon film is formed on the insulating layer 32 formed on the outermost surface of the semiconductor substrate 1, and an insulating layer 45 is stacked thereon. Then, an opening is opened in the insulating layer 32 and 45 on the ^{n +} layer 39, the metal electrode 46 on the insulating layer 45 that are stacked, and ^{the n +} layer 39 and the electrode 46 is contact. The electrode 46 functions as an overflow drain of the backside illumination type solid-state imaging device 100.

  When a subject image is picked up by the backside illumination type solid-state imaging device 100 having such a configuration, incident light from the object scene enters from the backside of the semiconductor substrate 1. The incident light is collected by the microlens 24, passes through the color filter layer 23, and enters the semiconductor substrate 1.

  When the light condensed by the microlens 24 enters the semiconductor substrate 1, the incident light travels while condensing in the direction of the photodiode 22 corresponding to the microlens 24 and the color filter 23, and enters the semiconductor substrate 1. It is absorbed and photoelectrically converted to generate hole electron pairs.

In the back-illuminated solid-state imaging device 100, since the distance from the back surface of the semiconductor substrate 1 to the n region 22 constituting the photodiode is about 9 μm, incident light is provided on the front surface side of the semiconductor substrate 1. Almost all of the light is absorbed by the substrate 1 and photoelectrically converted before reaching the n ⁺ region, that is, the charge transfer path 21. Therefore, it is not necessary to shield the vertical charge transfer path 21 from light.

  Holes generated in the photoelectric conversion regions (regions from the p layer 25 to the n region 35) of each pixel are absorbed by the high concentration p layer 25 and discarded to the ground. Electrons generated in the photoelectric conversion region of each pixel are accumulated in the n region 35 in the pixel, and when a read voltage is applied to the transfer electrode film 33 that also serves as a read electrode, the n region 35 causes a right neighbor in the illustrated example. To the embedded channel 31. Thereafter, the signal is transferred along the vertical charge transfer path 21 to the horizontal charge transfer path (not shown), transferred along the horizontal charge transfer path to the amplifier, and the amplifier outputs a voltage value signal corresponding to the signal charge amount to the captured image signal. Output as.

  In the back-illuminated solid-state imaging device 100 that performs such an operation, incident light enters through a photographing lens (not shown), and thus is obliquely incident light. Accordingly, in the example shown in FIG. 1, if the light shielding member 28 is not provided, incident light that has passed through the red (R) filter enters the photodiode 22 corresponding to the blue (B) filter, and color mixing occurs.

  In order to avoid this color mixture, the light shielding member 28 is provided, but the light shielding member 28 of the present embodiment is not simply a thin light shielding film that is laminated on the back surface of the antireflection film 27, but a semiconductor substrate. It is formed so as to be embedded in 1, that is, close to the photodiode 22. Thereby, the light shielding performance of the light shielding member 28 is improved.

  The light shielding member 28 shown in FIG. 1 is formed of a conductive member. Even if a predetermined potential (including a ground potential) is applied to the light shielding member 28, the operation performance of the solid-state imaging device can be improved. Good.

FIG. 3 is an explanatory diagram of the manufacturing process of the light shielding member 28 of the backside illumination type solid-state imaging device 100 shown in FIG. First, a resist 61 is applied to the p-type semiconductor substrate 1 on which the high-concentration p ⁺⁺ layer 25 is formed and the oxide film 26 is formed on the back surface, and the resist at the light shielding member forming portion of the resist 61 is removed. Then, the back side is etched (step a).

By this etching, a recess 62 that partitions each pixel is formed on the boundary line on the back surface side of the semiconductor substrate 1 (step b). In this embodiment, the recess 62 has a depth that does not penetrate the high-concentration p ⁺⁺ layer 25.

  Next, the inner surface of the recess 62 is oxidized to form an oxide film 63. The oxide film 63 on the back surface is integrated with the oxide film 26 (step c).

  Next, a tungsten film 28a is formed on the entire back surface of the semiconductor substrate 1 by PVD or CVD to fill the recess 62 (step d). Next, the rear surface is polished by CMP (chemical mechanical polishing) using the oxide film 26 as a stopper (step e).

  Next, a tungsten film 28b is further laminated on the surface of the oxide film 26 by PVD or CVD, and a resist 64 is applied thereon. Then, the resist corresponding to the recess 62 is left out of the resist 64, and the entire back surface is etched (step f).

  As a result, the light shielding member 28 made of tungsten is embedded in the semiconductor substrate 1 and protrudes to the back side of the semiconductor substrate 1 (step g).

  Next, the antireflection film 27 is laminated on the back side of the semiconductor substrate 1, and the color filter 23 is laminated thereon (step h).

  The above is the manufacturing process on the light shielding member 28 side of the back-illuminated solid-state imaging device 100 shown in FIG. By manufacturing in this way, the light shielding member 28 can be formed in an embedded state in the semiconductor substrate 1 and further formed in a shape protruding to the back side of the semiconductor substrate 1, and the length of the light shielding member 28 in the light incident direction can be increased. The light shielding performance is improved accordingly.

  In the present embodiment, the antireflection film 27 is partitioned by the light shielding member 28 for each pixel. Since the antireflection film 27 is a transparent member, there is a possibility that obliquely incident light may be multiple-reflected in the antireflection film 27 and enter the adjacent pixels. In particular, as the pixels become finer, this may not be ignored. However, in this embodiment, since the antireflection film 27 is divided for each pixel, there is no possibility of this.

  FIG. 4 is an explanatory diagram of a manufacturing process in a case where the back surface side tip of the light shielding member 28 in the back surface irradiation type solid-state imaging device 100 of FIG. In this way, in order to taper the tip on the back side of the light shielding member 28, a tapered resist 65 is used instead of the resist 64 used in step f of FIG. 3 (step f ′ of FIG. 4). A tapered light shielding member 28 '(step g' in FIG. 4) can be obtained.

  By forming the tip of the back side of the light shielding member 28 in a tapered shape, the opening rate on the back side can be improved and further enhancement of sensitivity can be achieved.

  FIG. 5 is a view showing a light shielding member 28 ″ according to another embodiment. In the embodiment of FIGS. 1 and 3, the light shielding member 28 embedded in the semiconductor substrate 1 is also provided on the back side of the semiconductor substrate 1. Although the protruding shape is used, the light shielding member 28 '' of the present embodiment has a shape of only the embedded portion. Even with this configuration, the light shielding performance can be improved.

  In the present embodiment, the antireflection film 27 does not have a structure divided by the light shielding member 28 ″, but is an antireflection film 27 continuous over the entire light receiving surface on the back surface side. Although there is a possibility of color mixing due to multiple reflection in the film 27, if the pixels are not miniaturized, the possibility of color mixing is low and this does not cause a problem.

In the embodiment shown in FIG. 1, the light shielding member 28 embedded in the semiconductor substrate 1 has a structure that does not penetrate the high-concentration p ⁺⁺ layer 25. This is because the outer peripheral surface of the light shielding member 28 is covered and insulated by the oxide film 63.

That is, the light shielding member 28 which outer circumferential surface is electrically insulated to form penetrates the p ⁺⁺ layer 25, as can be seen from FIG. 2, p ⁺⁺ layer 25 is divided by the light shielding member 28, the same voltage (Fig. 1 In the example shown, the ground potential) cannot be applied to the entire p ⁺⁺ layer 25. That is, holes generated by photoelectric conversion cannot be discarded outside.

However, as shown in FIG. 6, the embedding depth (including the oxide film 63) d <b> 2 of the light shielding member 68 is deeper than the thickness d <b> 1 of the p ⁺⁺ layer 25, and the light incident direction of the light shielding member 68 is increased. Therefore, it may be necessary to improve the light shielding performance.

  In such a case, the structure of the light shielding member 68 in a top view is not a structure in which the entire periphery of the pixel is divided for each pixel as shown in FIG. 2, but a part between adjacent pixels as shown in FIG. 66, the light shielding member 68 is blocked. In this part 66, since there is no light shielding member, there is a possibility that light leaks slightly from this part 66.

  As shown in FIG. 8, when the light receiving surface of the back-illuminated solid-state imaging device 100 is divided into the upper end side of the chip, the right end side of the chip, the left end side of the chip, and the lower end side of the chip, it enters through a photographing lens (not shown). The light enters the light receiving surface so as to spread with respect to the central optical axis of the photographing lens.

Therefore, as shown in FIG. 9, the entire shape of the light shielding member 68 is such that the light shielding member dividing portion (continuous portion between pixels) 66 does not occur in the light incident direction, and the p ⁺⁺ layer 25 between adjacent pixels. To be continuous. Thereby, the leakage of light becomes extremely small, and a predetermined voltage can be applied to the entire p ⁺⁺ layer 25.

  FIG. 10 is an explanatory diagram of the manufacturing process of the light shielding member of the backside illumination type solid-state imaging device according to another embodiment of the present invention. In this embodiment, an antireflection film 27 is first laminated on the entire surface of the oxide film 26 formed on the surface of the p-type semiconductor substrate 1 (step (1)), and then a resist 61 is applied and the resist 61 is applied. The light-shielding member forming portion is removed, and the back side is etched (step (2)).

  By this etching, a recess 62 that partitions each pixel is formed on the back side of the semiconductor substrate 1 (step (3)).

  Next, unlike the embodiment of FIG. 3, a tungsten film 28a is formed on the entire back surface of the semiconductor substrate 1 by PVD or CVD without oxidizing the inner surface of the recess 62, thereby filling the recess 62 (step). (4)).

  Next, the back side surface is cut down to the antireflection film 27 by CMP (step (5)). Then, a tungsten film 28b is again laminated on the surface of the antireflection film 27 by PVD or CVD, and a resist 64 is applied thereon, leaving a resist corresponding to the recess 62 in the resist 64, and etching the entire back surface. (Step (6)).

  As a result, the light shielding member 28 made of tungsten is embedded in the semiconductor substrate 1 and protrudes to the back side of the semiconductor substrate 1 (step (7)). And the color filter 23 is laminated | stacked on the back surface side of the semiconductor substrate 1 (process (8)).

In this embodiment, since the surface of the buried semiconductor substrate of tungsten is not oxidized, the metal metal comes into direct contact with the semiconductor substrate 1. Therefore, a process for preventing the semiconductor substrate 1 from being contaminated with metal metal is required. However, although the p ⁺⁺ layer 25 is not illustrated in FIG. 10, holes absorbed by the p ⁺⁺ layer 25 can be discarded through the light shielding member 28 by applying a predetermined negative voltage to the conductive light shielding member 28. It becomes.

  It is also possible to use a material that is not a metal metal as the material of the light shielding member 28. In such a case, the embodiment of FIG. 10 is optimal. Also in the embodiment of FIG. 10, as described in FIG. 4, the tip of the light shielding member 28 can be tapered.

  FIG. 11 is a diagram showing a modification of the embodiment of FIG. In FIG. 11, similarly to FIG. 5, the rear end portion on the back surface side of the light shielding member 28 embedded in the semiconductor substrate 1 is not projected. In this case, unlike the embodiment of FIG. 5, the light shielding member 28 is configured to divide the antireflection film 27.

  The back-illuminated solid-state imaging device according to the present invention is provided with a light shielding member for separating pixels embedded in a semiconductor substrate, so that crosstalk between pixels, color mixing, and the like are suitably performed without sacrificing photoelectric conversion efficiency. It can be suppressed and is useful as an image sensor mounted on a digital camera or the like that performs high-sensitivity shooting.

It is a cross-sectional schematic diagram of the backside illumination type solid-state image sensor which concerns on one Embodiment of this invention. It is the top view which looked at the light-shielding member shown in FIG. 1 from the back surface side. It is manufacturing process explanatory drawing of the light-shielding member of the back irradiation type solid-state image sensor shown in FIG. It is explanatory drawing of the modification of embodiment shown in FIG. It is a cross-sectional schematic diagram of the light shielding member which concerns on embodiment different from embodiment shown in FIG. FIG. 2 is a schematic cross-sectional view in the case where a light shielding member is formed through a p ⁺⁺ layer 25 in the backside illumination type solid-state imaging device shown in FIG. It is the top view which looked at the light-shielding member demonstrated in FIG. 6 from the back surface side. It is explanatory drawing of the light-receiving surface of a back irradiation type solid-state image sensor. FIG. 9 is a layout view of the light shielding members of FIG. 7 on the top, bottom, left and right of the chip shown in FIG. 8. It is manufacturing process explanatory drawing of the light-shielding member which concerns on another embodiment of this invention. It is a cross-sectional schematic diagram of the light-shielding member which concerns on embodiment different from embodiment shown in FIG.

Explanation of symbols

1 p-type semiconductor substrate 22 photodiode (n region)
23 Color filter 24 Micro lens (Top lens)
25 High-concentration p ⁺⁺ layer 26 for extracting holes 26 Oxide film 27 Antireflection films 28, 28 ′, 28 ″, 68 Shielding member 66 Dividing portion of shielding member

Claims (19)

A semiconductor substrate, a plurality of photodiodes that are formed in a two-dimensional array on the front side of the semiconductor substrate and store signal charges photoelectrically converted by light incident from the back side of the semiconductor substrate, and formed on the back side A high-concentration impurity layer that attracts the charge generated in pairs with the signal charge by the photoelectric conversion; and the high-concentration impurity layer is embedded in the high-concentration impurity layer so that at least a part thereof is continuous between adjacent photodiodes. A back-illuminated solid-state imaging device, comprising: a light shielding member that partitions incident light on the photodiode from the adjacent photodiode.   The back-illuminated solid-state imaging device according to claim 1, wherein the light shielding member is formed of a conductive material, and the light shielding member is embedded in the high concentration impurity layer in a state of covering an insulating film.   2. The back-illuminated solid according to claim 1, wherein the light shielding member is formed of a conductive material, and the light shielding member in direct contact with the high concentration impurity layer penetrates the high concentration impurity layer. Image sensor.   The light shielding member has a buried depth penetrating the high-concentration impurity layer, and the light-shielding member has the high-concentration impurity between adjacent pixels so that the light-shielding member is not divided in the light incident direction. The back-illuminated solid-state imaging device according to claim 2, wherein a partial defect portion that makes the layers continuous is provided.   5. The backside illumination type solid-state imaging device according to claim 1, wherein the light shielding member is formed to protrude from the backside.   The backside illumination type solid-state imaging device according to claim 1, wherein an insulating film and an antireflection film are formed on the surface on the backside.   The back-illuminated solid-state imaging device according to claim 6, wherein the antireflection film is divided by the light shielding member.   The backside irradiation type solid-state imaging device according to any one of claims 1 to 7, wherein a tip of the backside of the light shielding member is tapered.   The back-illuminated solid-state imaging device according to claim 3, wherein a predetermined voltage is applied to the light shielding member.   The back-illuminated solid-state imaging device according to claim 9, wherein the predetermined voltage is applied from a circuit provided in a peripheral portion of the semiconductor substrate. A plurality of photodiodes are formed in a two-dimensional array on the front side, and signal charges photoelectrically converted by light incident from the back side are accumulated on the back side of the semiconductor substrate in the photodiodes by the photoelectric conversion. Forming a high-concentration impurity layer that attracts the charge generated in pairs with the signal charge, and etching the boundary position of the back surface that partitions incident light to each photodiode from the adjacent photodiode; A method of manufacturing a backside illumination type solid-state imaging device, wherein a light shielding material is embedded in the high concentration impurity layer so that at least a part of the high concentration impurity layer is continuous between adjacent photodiodes .   The backside illumination type solid-state imaging device according to claim 11, wherein the light shielding member is formed of a conductive material, and the light shielding member is embedded in the high concentration impurity layer in a state of covering an insulating film. Production method.   The back-illuminated solid according to claim 11, wherein the light shielding member is formed of a conductive material, and the light shielding member in direct contact with the high-concentration impurity layer penetrates the high-concentration impurity layer. Manufacturing method of imaging device.   The light shielding member has a buried depth penetrating the high-concentration impurity layer, and the light-shielding member has the high-concentration impurity between adjacent pixels so that the light-shielding member is not divided in the light incident direction. The method for manufacturing a backside illumination type solid-state imaging device according to claim 12, wherein a partial defect portion for continuing the layers is provided.   The method of manufacturing a backside illumination type solid-state imaging device according to any one of claims 11 to 14, wherein the light shielding member is formed to protrude from the backside.   The method for manufacturing a backside illumination type solid-state imaging device according to any one of claims 11 to 15, wherein an insulating film and an antireflection film are formed on the surface on the backside.   The method of manufacturing a backside illumination type solid-state imaging device according to claim 16, wherein the antireflection film is divided by the light shielding member.   The method for manufacturing a backside illumination solid-state imaging device according to any one of claims 11 to 17, wherein the backside tip of the light shielding member is tapered.   The method of manufacturing a backside illumination type solid-state imaging device according to claim 13, wherein a peripheral circuit that applies a predetermined voltage to the light shielding member is formed on the semiconductor substrate.

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