JP2019506703A - ニッケル酸リチウム系正極活物質粒子粉末及びその製造方法、並びに非水電解質二次電池 - Google Patents
ニッケル酸リチウム系正極活物質粒子粉末及びその製造方法、並びに非水電解質二次電池 Download PDFInfo
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- JP2019506703A JP2019506703A JP2018532259A JP2018532259A JP2019506703A JP 2019506703 A JP2019506703 A JP 2019506703A JP 2018532259 A JP2018532259 A JP 2018532259A JP 2018532259 A JP2018532259 A JP 2018532259A JP 2019506703 A JP2019506703 A JP 2019506703A
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- Prior art keywords
- positive electrode
- active material
- electrode active
- lithium
- coating compound
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- Granted
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- 239000000843 powder Substances 0.000 title claims abstract description 96
- 239000007774 positive electrode material Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000011255 nonaqueous electrolyte Substances 0.000 title claims description 10
- 229910052744 lithium Inorganic materials 0.000 title abstract description 91
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title abstract description 86
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims abstract description 145
- 239000002245 particle Substances 0.000 claims abstract description 97
- 239000011248 coating agent Substances 0.000 claims abstract description 86
- 238000000576 coating method Methods 0.000 claims abstract description 86
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- ONCCWDRMOZMNSM-FBCQKBJTSA-N compound Z Chemical compound N1=C2C(=O)NC(N)=NC2=NC=C1C(=O)[C@H]1OP(O)(=O)OC[C@H]1O ONCCWDRMOZMNSM-FBCQKBJTSA-N 0.000 claims abstract description 42
- 239000002131 composite material Substances 0.000 claims abstract description 39
- 239000007771 core particle Substances 0.000 claims abstract description 38
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 27
- 229910052808 lithium carbonate Inorganic materials 0.000 claims abstract description 27
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000012298 atmosphere Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- URIIGZKXFBNRAU-UHFFFAOYSA-N lithium;oxonickel Chemical compound [Li].[Ni]=O URIIGZKXFBNRAU-UHFFFAOYSA-N 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 15
- 239000003792 electrolyte Substances 0.000 abstract description 9
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- 229910001947 lithium oxide Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 21
- 239000002994 raw material Substances 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 229910006462 Li1.02Ni0.81Co0.15Al0.04O2 Inorganic materials 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 239000011267 electrode slurry Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000003746 solid phase reaction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000011149 active material Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000001879 gelation Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000007086 side reaction Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000003125 aqueous solvent Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000006258 conductive agent Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000733 Li alloy Inorganic materials 0.000 description 2
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 2
- 229910013870 LiPF 6 Inorganic materials 0.000 description 2
- 229910016973 Ni0.84Co0.16(OH)2 Inorganic materials 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011367 bulky particle Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- GLXDVVHUTZTUQK-UHFFFAOYSA-M lithium hydroxide monohydrate Substances [Li+].O.[OH-] GLXDVVHUTZTUQK-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910021543 Nickel dioxide Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- PQVSTLUFSYVLTO-UHFFFAOYSA-N ethyl n-ethoxycarbonylcarbamate Chemical compound CCOC(=O)NC(=O)OCC PQVSTLUFSYVLTO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- 229940040692 lithium hydroxide monohydrate Drugs 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- MRHPUNCYMXRSMA-UHFFFAOYSA-N nickel(2+) oxygen(2-) Chemical compound [O--].[O--].[Ni++] MRHPUNCYMXRSMA-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000000954 titration curve Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract
【解決手段】層状構造のニッケル酸リチウム複合酸化物Li1+aNi1−b−cCobMcO2(Mは元素Mn、Al、B、Mg、Ti、Sn、Zn、Zrのうち少なくとも1種、−0.1≦a≦0.2、0.05≦b≦0.5、0.01≦c≦0.4)を芯粒子Xとし、元素Al、Mg、Zr、Ti、Siのうち少なくとも1種を含む被覆化合物Yと、Li元素を含む被覆化合物Zを有し、水酸化リチウムLiOHの含有量が0.40重量%以下、炭酸リチウムLi2CO3の含有量が0.65重量%以下、水酸化リチウム含有量に対する炭酸リチウム含有量の重量比が1以上であることを特徴とするニッケル酸リチウム系正極活物質粒子粉末。
【選択図】なし
Description
本発明に係る好ましいニッケル酸リチウム系正極活物質粒子粉末は、気相成長法で形成された被覆化合物Yと、加湿処理後の熱処理で形成されたLi元素を含む被覆化合物Zを備える。そのため、残存する水酸化リチウム含有量が極めて低く、また、非水電解液と該正極活物質粒子粉末との直接接触を妨げることができる。同時に適度に残存する被覆化合物ZはLiを含む電解液の分解反応を低減すると予測される。従って、電極スラリー作製時にゲル化が無く、また、得られる二次電池は充放電に伴う電極反応以外の副反応を抑制するので、高電圧時の充放電繰り返し特性に優れ、且つ、高温保存時のガス発生による電池の体積膨張を抑えた正極活物質粒子粉末として好適である。
前駆体であるコバルト含有水酸化ニッケルNi0.84Co0.16(OH)2は水溶媒中のアンモニア錯体を経由した晶析法で数日間かけて得られた。該水酸化物と水酸化リチウム・一水塩LiOH・H2Oと水酸化アルミニウムAl(OH)3を、モル比でLi:Ni:Co:Al=1.02:0.81:0.15:0.04になるよう所定量を計量後、ハイスピードミキサーで混合し、ローラーハースキルンにおいて酸素雰囲気下770℃で芯粒子Xとなり得るニッケル酸リチウム複合酸化物を得た。
実施例1で得られた芯粒子Xとなり得る層状構造のニッケル酸リチウム複合酸化物Li1.02Ni0.81Co0.15Al0.04O2を用い、原子層堆積法で被覆化合物Yを形成させた。同法での処理条件は実施例1と同様で、用いた原料ガスAはトリメチルアルミニウムAl2(CH3)6、原料ガスBはH2Oであり、180℃で4サイクルの処理であった。その後、温度20℃で相対湿度21%の空気を80ft/min.流通させて6時間加湿処理し、大気中350℃−2時間で被覆化合物Zを形成させた。
実施例1で得られた芯粒子Xとなり得る層状構造のニッケル酸リチウム複合酸化物Li1.02Ni0.81Co0.15Al0.04O2を、表面処理することなく正極活物質粒子粉末として用いた。図6(3)にXPSの深さ方向のプロファイルを示すように、表層に元素Li、Cが多く検出され、Alは全く検出されず、LiOHとLi2CO3が存在すると推定される。しかしながら、図4のSEM写真に示すように、粒子表面は滑らかであり、時折、100nm以下の粒子が観察される程度であり、被覆化合物を備えているとは言い難かった。また、XRDによる格子定数は六方格子で表わすと、a=2.8651Å、c=14.181Åであった。
実施例2の途中の製造工程から抜き取った試料、即ち、原子層堆積法での処理後の試料を正極活物質として用いた。表に粉体特性及び電池特性を示すように、高い水酸化リチウムの含有量を示し、2%粉体pHも高く、低性能の二次電池特性を示した。
実施例1の途中の製造工程から抜き取った試料、即ち、加湿処理と大気中の熱処理を経た直後の試料を正極活物質として用いた。表に粉体特性及び電池特性を示すように、高い炭酸リチウムの含有量を示し、低性能の二次電池特性を示した。図5のSEM写真を示すように、粒子表面は滑らかでなく、粒子表面全体に渡って、100nm以下の粒子が観察され、炭酸リチウムと推定される被覆化合物Zを備えていた。
実施例1で得られた芯粒子Xとなり得る層状構造のニッケル酸リチウム複合酸化物Li1.02Ni0.81Co0.15Al0.04O2を50vol%CO2/50vol%大気の混合ガス流通下で250℃−2時間処理を行った。表に粉体特性及び電池特性を示すように、高い水酸化リチウムの含有量を示し、低性能の二次電池特性を示した。図6(4)にXPSの深さ方向のプロファイルを示すように、表層に元素Li、Cが多く検出され、Alは全く検出されず、Li2CO3と推定された。
前駆体であるコバルト含有水酸化ニッケルNi0.84Co0.16(OH)2(D50は約6μm)は水溶媒中のアンモニア錯体を経由した晶析法で数日間かけて得られた。以降、実施例1と同様の処理を行った。実施例3〜7、及び比較例5〜14で得られたニッケル酸リチウム系正極活物質粒子粉末の粉体特性及び電池特性を表2に示す。
実施例1で得られた芯粒子Xとなり得る層状構造のニッケル酸リチウム複合酸化物Li1.02Ni0.81Co0.15Al0.04O2を用い、原子層堆積法で被覆化合物Yを形成させた。同法での処理条件はサイクル数を2とした以外は実施例1と同様で、用いた原料ガスAはトリメチルアルミニウムAl2(CH3)6、原料ガスBはH2Oであり、180℃での処理であった。その後、温度20℃で相対湿度21%の空気を80ft/min.流通させて6時間加湿処理し、大気中350℃−2時間で被覆化合物Zを形成させた。
原子層堆積法のサイクル数を2から3.5と変更した以外は、実施例4と同様の処理を行った。
実施例5において、温度20℃で相対湿度21%の空気80ft/min.流通させた6時間の加湿処理を、温度20℃でAir:CO2=1:1(体積比)の混合ガス8L/min(相対湿度約20%)で2時間流通させた処理、と変更した以外は、実施例5と同様の処理を行った。
原子層堆積法のサイクル数を2から7と変更した以外は、実施例4と同様の処理を行った。
実施例3の途中で得られたローラーハースキルンにおいて酸素雰囲気下770℃で芯粒子Xとなり得るニッケル酸リチウム複合酸化物をそのまま正極活物質として用いた。
加湿処理後、大気中350℃、2時間で被覆化合物Zを作製する工程を省くこと以外、実施例3同様の処理を行った。
実施例1に用いた芯粒子Xとなり得るニッケル酸リチウム複合酸化物を、空気:CO2=3:1(体積比)の混合ガス条件下、350℃−2時間処理した。原子層堆積法での処理は行わなかった。
実施例4に用いた芯粒子Xとなり得るニッケル酸リチウム複合酸化物を、空気:CO2=3:1(体積比)の混合ガス条件下、350℃−2時間処理した。原子層堆積法での処理は行わなかった。
実施例4の途中の工程で得られた芯粒子Xとなり得るニッケル酸リチウム複合酸化物に、被覆化合物Yを形成させて、正極活物質として用いた。
実施例5の途中の工程で得られた芯粒子Xとなり得るニッケル酸リチウム複合酸化物に、被覆化合物Yを形成させて、正極活物質として用いた。
実施例7の途中の工程で得られた芯粒子Xとなり得るニッケル酸リチウム複合酸化物に、被覆化合物Yを形成させて、正極活物質として用いた。
実施例3の途中の工程で得られた芯粒子Xとなり得るニッケル酸リチウム複合酸化物粒子粉末30gを、温度20℃相対湿度21%の大気80ft/min流通させて6時間保持し、含有するLiOHをLiOH・H2Oへとした。続いて、大気中350℃、2時間で該不純物をLi2CO3へと変え、被覆化合物Zを作製した。被覆化合物Yを形成させる工程は省略した。
温度20℃相対湿度21%の大気80ft/min流通させて6時間保持を、空気:CO2=1:1(体積比)の混合ガスを8L/minで流しながら2時間保持と変更する以外は、比較例12と同様の処理を行った。
実施例4の途中の工程で得られた芯粒子Xとなり得るニッケル酸リチウム複合酸化物粒子粉末30gを、温度20℃の空気:CO2=1:1(体積比)の混合ガスを8L/minで流しながら2時間保持し、含有するLiOHをLiOH・H2Oへとした。続いて、大気中350℃、2時間で該不純物をLi2CO3へと変え、被覆化合物Zを作製した。被覆化合物Yを形成させる工程は省略した。
Claims (6)
- 層状構造のニッケル酸リチウム複合酸化物Li1+aNi1−b−cCobMcO2(Mは元素Mn、Al、B、Mg、Ti、Sn、Zn、Zrのうち少なくとも1種、−0.1≦a≦0.2、0.05≦b≦0.5、0.01≦c≦0.4)を芯粒子Xとし、元素Al、Mg、Zr、Ti、Siのうち少なくとも1種を含む被覆化合物Yと、Li元素を含む被覆化合物Zを有し、水酸化リチウムLiOHの含有量が0.40重量%以下、炭酸リチウムLi2CO3の含有量が0.65重量%以下、水酸化リチウム含有量に対する炭酸リチウム含有量の重量比が1以上である正極活物質粒子粉末。
- 請求項1記載の正極活物質粒子粉末であって、前記被覆化合物Yに対する前記被覆化合物Zの比率範囲が1〜100重量比である正極活物質粒子粉末。
- 請求項1記載の正極活物質粒子粉末であって、BET比表面積が0.05〜0.70m2/g、凝集粒子メジアン径D50が1〜30μm、2%粉体pHが11.40以下である正極活物質粒子粉末。
- 請求項1記載の正極活物質粒子粉末の製造方法であって、前記芯粒子Xの表面に、前記被覆化合物Yを気相成長法で形成させた後、前記被覆化合物Zを加湿処理と大気中150〜450℃の熱処理で形成させることを特徴とする製造方法。
- 請求項1記載の正極活物質粒子粉末の製造方法であって、前記芯粒子Xの表面に、前記被覆化合物Zを加湿処理と大気中150〜450℃の熱処理で形成させた後、前記被覆化合物Yを気相成長法で形成させることを特徴とする製造方法。
- 請求項1記載の正極活物質粒子粉末を、正極活物質の少なくとも一部に用いた非水電解質二次電池。
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EP3402750A1 (en) | 2018-11-21 |
US11552292B2 (en) | 2023-01-10 |
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EP3402750A4 (en) | 2019-08-28 |
US20200212442A1 (en) | 2020-07-02 |
JP6987764B2 (ja) | 2022-01-05 |
WO2017123836A1 (en) | 2017-07-20 |
US10615414B2 (en) | 2020-04-07 |
CN109071266A (zh) | 2018-12-21 |
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