JP2014216532A - Semiconductor light-emitting element package - Google Patents

Semiconductor light-emitting element package Download PDF

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JP2014216532A
JP2014216532A JP2013093755A JP2013093755A JP2014216532A JP 2014216532 A JP2014216532 A JP 2014216532A JP 2013093755 A JP2013093755 A JP 2013093755A JP 2013093755 A JP2013093755 A JP 2013093755A JP 2014216532 A JP2014216532 A JP 2014216532A
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semiconductor light
light emitting
emitting element
translucent
emitting device
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JP6128938B2 (en
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正成 石附
Masashige Ishizuki
正成 石附
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Tokuyama Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element package in which an organic adhesive material is not deteriorated by ultraviolet light emitted from a semiconductor light-emitting element, and the output of light is not lowered.SOLUTION: A semiconductor light-emitting element package includes a semiconductor light-emitting element, a nontranslucent substrate mounting the semiconductor light-emitting element thereon, a translucent protective member having a recess opening downward and capable of housing the semiconductor light-emitting element, and an electrode for supplying power to the semiconductor light-emitting element. In a state where the semiconductor light-emitting element is housed in the recess of the translucent protective member, the translucent protective member and the nontranslucent substrate are sealed by an organic adhesive, at a part where the light from the semiconductor light-emitting element is shielded, e.g., a fitting part of the peripheral edge of the nontranslucent substrate and the opening end of the recess of the translucent protective member. By such a sealing method, a semiconductor light-emitting element package in which the organic adhesive material is not deteriorated, and the output of light is not lowered can be obtained.

Description

本発明は、半導体発光素子を保護する保護材を含む半導体発光素子パッケージに関する。   The present invention relates to a semiconductor light emitting device package including a protective material for protecting a semiconductor light emitting device.

近年、省エネルギーの観点から、様々な光源の発光ダイオード素子（以下、ＬＥＤともいう）化が進行しており、赤色、緑色、青色のＬＥＤが急速に普及している。そして、それらのＬＥＤと蛍光体を組み合わせて作製される白色光についても、同様に、ＬＥＤ化が進行しており、一般家庭への普及が始まっている。このような背景から、青色のＬＥＤよりも波長が短い紫外線領域においても、水銀灯などの従来の光源からＬＥＤへの代替が検討されている。   In recent years, from the viewpoint of energy saving, light-emitting diode elements (hereinafter also referred to as LEDs) of various light sources have been developed, and red, green, and blue LEDs are rapidly spreading. And about white light produced combining those LED and fluorescent substance, LED conversion is advancing similarly and the spread to general households has begun. Against such a background, replacement of a conventional light source such as a mercury lamp with an LED has been studied even in an ultraviolet region having a wavelength shorter than that of a blue LED.

その紫外線領域において、特に、殺菌効果が高い波長領域である２６５ｎｍ付近の波長の光を発光する半導体発光素子が望まれており、そのような波長を持つ紫外線領域の半導体発光素子の開発に重点が置かれている。   In the ultraviolet region, a semiconductor light emitting device that emits light having a wavelength of around 265 nm, which is a wavelength region having a high bactericidal effect, is desired, and an emphasis is placed on the development of a semiconductor light emitting device in the ultraviolet region having such a wavelength. It has been placed.

しかしながら、波長が２６５ｎｍ付近で発光する半導体発光素子をパッケージングするに際しては、従来の赤色、緑色、青色のＬＥＤで使用されてきたエポキシ樹脂よりなる透光性樹脂材料によって封止する樹脂モールド構造を採用することが出来ない。なぜならば、透光性樹脂材料として使用されるエポキシ樹脂が、波長２６５ｎｍ付近の紫外線発照射により劣化し、長時間の使用に伴って透光性樹脂材料の紫外線透過率が低下するからである。   However, when packaging a semiconductor light emitting device that emits light at a wavelength of around 265 nm, a resin mold structure that is sealed with a translucent resin material made of an epoxy resin that has been used in conventional red, green, and blue LEDs is used. It cannot be adopted. This is because the epoxy resin used as the light-transmitting resin material is deteriorated by the irradiation with ultraviolet light having a wavelength of about 265 nm, and the ultraviolet light transmittance of the light-transmitting resin material is lowered with long-time use.

さらに、半導体発光素子を封止するために使用されている有機系接着剤も紫外線によって劣化するので、半導体発光素子パッケージの気密性が低下する。その結果、半導体発光素子パッケージ内に空気中の水分や酸素が侵入し、半導体発光素子が空気中の水分や酸素によって劣化するため、安定した光の出力を得ることが出来ないからである。   Furthermore, since the organic adhesive used for sealing the semiconductor light emitting element is also deteriorated by the ultraviolet rays, the airtightness of the semiconductor light emitting element package is lowered. As a result, moisture and oxygen in the air enter the semiconductor light emitting device package, and the semiconductor light emitting device is deteriorated by moisture and oxygen in the air, so that stable light output cannot be obtained.

前述した紫外線が照射されることで有機系接着剤や透光性樹脂材料が劣化する問題に対して、例えば特許文献１では、光透過領域に無色透明、高強度、高融点であるサファイアを窓として使用し、半導体素子を収容するセラミックスとサファイア窓とをロウ付けし、半導体素子を封止する半導体素子収納用パッケージが開示されている。   For example, in Patent Document 1, sapphire that is colorless, transparent, high-strength, and high-melting point is provided in the light transmission region in response to the problem that the organic adhesive and the translucent resin material deteriorate due to the irradiation of the ultraviolet rays described above. A package for housing a semiconductor element is disclosed in which a ceramic element for housing a semiconductor element and a sapphire window are brazed to seal the semiconductor element.

また、特許文献２では、特許文献１と同様に、紫外線発光素子、紫外線発光素子を配置するための基板、紫外線発光素子を保護するための金属キャップ、サファイアの窓からなる紫外線センサにおいて、金属キャップとサファイアの窓を金属でロウ付けし接着、封止することで、接着に有機材料を用いない紫外線センサのパッケージが開示されている。   Further, in Patent Document 2, as in Patent Document 1, an ultraviolet light emitting element, a substrate for arranging the ultraviolet light emitting element, a metal cap for protecting the ultraviolet light emitting element, and an ultraviolet sensor comprising a sapphire window, An ultraviolet sensor package is disclosed in which an organic material is not used for adhesion by brazing and sealing a sapphire window with metal.

さらに、特許文献３では、集光レンズと紫外線発光素子からなる紫外線発光素子パッケージにおいて、紫外線耐久性を有する屈折率緩和物質であるシリコーン樹脂を充填し、紫外線発光素子パッケージのギャップを封止する方法が開示されている。   Further, in Patent Document 3, in an ultraviolet light emitting device package including a condenser lens and an ultraviolet light emitting device, a method of sealing a gap of the ultraviolet light emitting device package by filling a silicone resin that is a refractive index relaxation material having ultraviolet durability. Is disclosed.

特開２００１−２３７３３５公報JP 2001-237335 A 特開２００４− ３７１７４公報JP-A-2004-37174 特開２００７−３１１７０７公報JP 2007-311707 A

しかしながら、特許文献１や特許文献２のように、サファイア窓をパッケージングするための容器に金属によってロウ付けを施した場合では、サファイア窓の面積が小さいために半導体発光素子から発光した光の一部しかサファイア窓を通して取り出すことが出来ず、半導体発光素子からパッケージの外部へ取り出せる光の出力が低下するという課題があった。また、サファイア窓の面積分しか光が拡散せず、半導体発光素子からの光の拡散範囲が狭いという課題もあった。   However, when the container for packaging the sapphire window is brazed with metal as in Patent Document 1 and Patent Document 2, the area of the sapphire window is small, so that one of the light emitted from the semiconductor light emitting device is reduced. Only the portion can be taken out through the sapphire window, and there is a problem that the output of light that can be taken out from the semiconductor light emitting device to the outside of the package is reduced. There is also a problem that light is diffused only by the area of the sapphire window, and the diffusion range of light from the semiconductor light emitting element is narrow.

また、特許文献３のように、紫外線耐久性を有する屈折率差緩和物質を充填し、これまでの半導体発光素子と同様の構造とした場合でも、半導体発光素子から発光された光を屈折率差緩和物質が吸収し、その結果、半導体発光素子から発光した光の出力が低下するという課題があった。   In addition, as in Patent Document 3, even when a refractive index difference relaxation substance having ultraviolet durability is filled and the structure is the same as that of a conventional semiconductor light emitting element, the light emitted from the semiconductor light emitting element is changed in refractive index difference. There is a problem that the relaxation substance absorbs, and as a result, the output of light emitted from the semiconductor light emitting element is reduced.

一般的に、３００ｎｍ以下の紫外領域では、波長が短くなるほど、半導体発光素子の内部量子効率が低下するため、屈折率差緩和物質による紫外光の吸収の影響を無視することが出来なくなる。   In general, in the ultraviolet region of 300 nm or less, the shorter the wavelength, the lower the internal quantum efficiency of the semiconductor light emitting device. Therefore, the influence of absorption of ultraviolet light by the refractive index difference relaxation substance cannot be ignored.

本発明は、上記問題点に鑑み完成された発明であり、本発明の目的は、紫外線によって封止材が劣化せず、光の出力が低下しない半導体発光素子パッケージを提供することにある。   The present invention has been completed in view of the above problems, and an object of the present invention is to provide a semiconductor light emitting device package in which the sealing material is not deteriorated by ultraviolet rays and the light output is not reduced.

本発明者らは、上記課題を解決するために鋭意検討を重ねた。その結果、半導体発光素子パッケージを以下の構造とすることによって、上記課題を解決できることを見出した。   The present inventors have made extensive studies to solve the above problems. As a result, it has been found that the above problem can be solved by making the semiconductor light emitting device package have the following structure.

つまり、非透光性基板の上に搭載された半導体発光素子を、下に開口した透光性保護材の凹部に収容した状態で、透光性保護材と非透光性基板とが、半導体発光素子からの光が遮蔽された部位で有機系接着剤によって封止された構造とすることで、紫外線照射によって有機系接着剤が劣化せず、半導体発光素子から発光した光の出力が低下しない半導体発光素子パッケージとなることを見出し、本発明を完成するに至った。   That is, in a state where the semiconductor light-emitting element mounted on the non-transparent substrate is accommodated in the concave portion of the translucent protective material opened below, the translucent protective material and the non-transparent substrate are the semiconductor. By adopting a structure in which light from the light emitting element is sealed with an organic adhesive at a site where light is blocked, the organic adhesive is not deteriorated by ultraviolet irradiation, and the output of light emitted from the semiconductor light emitting element is not reduced. As a result, the present invention has been completed.

すなわち、本発明は、半導体発光素子と該半導体発光素子をその上に搭載した非透光性基板と、半導体発光素子を収容しうる、下に開口した凹部を有する透光性保護材と、半導体発光素子に電力を供給するための電極を有し、透光性保護材の凹部に半導体発光素子を収容した状態で、透光性保護材と非透光性基板とが、半導体発光素子からの光が遮蔽された部位で有機系接着剤によって封止されてなる半導体発光素子パッケージである。   That is, the present invention relates to a semiconductor light emitting element, a non-translucent substrate on which the semiconductor light emitting element is mounted, a translucent protective material having a recess opened under the semiconductor light emitting element, and a semiconductor The translucent protective material and the non-translucent substrate have an electrode for supplying power to the light emitting element and the semiconductor light emitting element is accommodated in the recess of the translucent protective material. This is a semiconductor light emitting device package that is sealed with an organic adhesive at a portion where light is shielded.

本発明によれば、透光性保護材の凹部に半導体発光素子を収容した状態で、透光性保護材と非透光性基板とが、例えば、半導体発光素子から発光した光が非透光性基板自体によって遮蔽された非透光性基板と透光性保護材の嵌合部分にて、有機系接着剤によって封止される。このような封止方法とすることで、有機系接着材が劣化せず、半導体発光素子から発光した光の出力が低下しない半導体発光素子パッケージとなる。   According to the present invention, in a state where the semiconductor light emitting element is accommodated in the recess of the light transmitting protective material, the light transmitting protective material and the non-light transmitting substrate, for example, emit light emitted from the semiconductor light emitting element. The non-translucent substrate and the translucent protective material that are shielded by the transparent substrate itself are sealed with an organic adhesive. By adopting such a sealing method, a semiconductor light emitting device package is obtained in which the organic adhesive does not deteriorate and the output of light emitted from the semiconductor light emitting device does not decrease.

また、本発明によれば、半導体発光素子を覆う上面全面を透光性保護材とすることができるため、特許文献１や特許文献２のようにサファイア窓を使用したパッケージと比較して、本発明の半導体発光素子パッケージでは、半導体発光素子から発光した光を広範囲に照射することが可能である。特に、殺菌用途において本発明の半導体発光素子パッケージを使用する場合は、広範囲に光を照射して殺菌することが可能となる。   Further, according to the present invention, since the entire upper surface covering the semiconductor light emitting element can be used as a translucent protective material, compared with a package using a sapphire window as in Patent Document 1 and Patent Document 2, In the semiconductor light emitting device package of the invention, it is possible to irradiate light emitted from the semiconductor light emitting device over a wide range. In particular, when the semiconductor light emitting device package of the present invention is used for sterilization, it can be sterilized by irradiating light over a wide range.

本発明に係る第一の実施形態の半導体発光素子パッケージの垂直断面図。1 is a vertical sectional view of a semiconductor light emitting device package according to a first embodiment of the present invention. 本発明に係る第二の実施形態の半導体発光素子パッケージの垂直断面図。The vertical sectional view of the semiconductor light emitting device package of the second embodiment according to the present invention. 本発明に係る第三の実施形態の半導体発光素子パッケージの垂直断面図。The vertical sectional view of the semiconductor light emitting element package of the third embodiment according to the present invention. 本発明に係る第四の実施形態の半導体発光素子パッケージの垂直断面図。The vertical sectional view of the semiconductor light emitting element package of the fourth embodiment concerning the present invention. 本発明に係る第五の実施形態の半導体発光素子パッケージの垂直断面図。The vertical sectional view of the semiconductor light emitting element package of the fifth embodiment according to the present invention. 本発明に係る第六の実施形態の半導体発光素子パッケージの垂直断面図。The vertical sectional view of the semiconductor light emitting element package of the sixth embodiment according to the present invention.

１ 透光性保護材
２ 半導体発光素子
３ 非透光性基板
３′光遮蔽板
４ 有機系接着剤
５ 電極
６ 光反射板
７ 開口端
８ 切り欠き
９ 溝
1 Translucent protective material
2 Semiconductor light emitting device
3 Non-translucent substrate
3 'light shielding plate 4 organic adhesive
5 Electrode 6 Light reflector 7 Open end 8 Notch 9 Groove

以下、本発明を図１から図６に基づいて詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to FIGS.

＜図１の説明＞
図１に、本発明の第一の実施形態である半導体発光素子パッケージを示した。半導体発光素子パッケージを構成する部材として、凹部を有する透光性保護材１、半導体発光素子２、非透光性基板３を含んでおり、非透光性基板３にはサブマウント（図示せず）を介して半導体発光素子２が搭載される。非透光性基板３には、電極５を貫通させるための貫通孔が設けられ、該貫通孔に半導体発光素子２に電力を供給するための電極５が嵌入される。嵌入された電極５が半導体発光素子２に導線やハンダを介して電気的に接合される。 <Description of FIG. 1>
FIG. 1 shows a semiconductor light emitting device package according to a first embodiment of the present invention. As a member constituting the semiconductor light emitting device package, a light transmissive protective material 1 having a recess, a semiconductor light emitting device 2, and a non-light transmissive substrate 3 are included, and the non-light transmissive substrate 3 has a submount (not shown). ) To mount the semiconductor light emitting element 2. The non-translucent substrate 3 is provided with a through hole for penetrating the electrode 5, and the electrode 5 for supplying electric power to the semiconductor light emitting element 2 is fitted into the through hole. The inserted electrode 5 is electrically joined to the semiconductor light emitting element 2 via a conductor or solder.

そして、透光性保護材１に設けられた凹部に、非透光性基板３に搭載された半導体発光素子２が収容された状態で、非透光性基板３と透光性保護材１とが接着される。
本発明の最大の特徴は、半導体発光素子２から発光された光が遮蔽された部位で透光性保護材１と非透光性基板３が有機系接着剤４によって接着されることである。半導体発光素子２から発光された光が遮蔽された部位は、図１においては、透光性保護材１に設けられた凹部の先端である開口端７と非透光性基板３の周囲との嵌合部であって非透光性基板３自身によって半導体発光素子２からの光が遮蔽された部位である。このような部位は、半導体発光素子２の上面右端（又は左端）と非透光性基板３の上面右端（又は左端）とを通る直線よりも下に位置する必要がある。 Then, in a state where the semiconductor light emitting element 2 mounted on the non-transparent substrate 3 is accommodated in the recess provided in the translucent protective material 1, the non-transparent substrate 3 and the translucent protective material 1 Is glued.
The greatest feature of the present invention is that the translucent protective material 1 and the non-translucent substrate 3 are bonded by the organic adhesive 4 at a portion where the light emitted from the semiconductor light emitting element 2 is shielded. In FIG. 1, the portion where the light emitted from the semiconductor light emitting element 2 is shielded is between the opening end 7 which is the tip of the concave portion provided in the translucent protective material 1 and the periphery of the non-transparent substrate 3. It is a part which is a fitting part and the light from the semiconductor light emitting element 2 is shielded by the non-translucent substrate 3 itself. Such a part needs to be located below a straight line passing through the upper right end (or left end) of the semiconductor light emitting element 2 and the upper right end (or left end) of the non-translucent substrate 3.

＜図２の説明＞
また、図２には、本発明の別の態様である半導体発光素子パッケージを示した。透光性保護材１は、半導体発光素子２から発光された光を透過すればよく、例えば、半導体発光素子２から発光された光を集光させる場合には、透光性保護材１の上面を図２のように、凸レンズ状の形状としてもよい。その他の構造は、図１の実施形態と同様であり、非透光性基板３自身によって半導体発光素子２から発光された光が遮蔽された部位にて透光性保護材１と非透光性基板３とが有機系接着剤４を介して接着される。 <Description of FIG. 2>
FIG. 2 shows a semiconductor light emitting device package which is another embodiment of the present invention. The translucent protective material 1 only needs to transmit the light emitted from the semiconductor light emitting element 2. For example, when condensing the light emitted from the semiconductor light emitting element 2, the upper surface of the translucent protective material 1 is used. As shown in FIG. 2, a convex lens shape may be used. The other structure is the same as that of the embodiment of FIG. 1, and the translucent protective material 1 and the non-translucent material are used at the portion where the light emitted from the semiconductor light emitting element 2 is shielded by the non-translucent substrate 3 itself. The substrate 3 is bonded via the organic adhesive 4.

＜図３の説明＞
次に、図３には、本発明の別の態様である半導体素子パッケージを示した。非透光性基板３の周縁部に、非透光性基板３の全周にわたって、切り欠き８が設けられている。そして、該切り欠き８と、透光性保護材１に設けられた凹部の開口端７とを嵌合させる。その嵌合部位にて、有機系接着剤４を介して、透光性保護材１と非透光性基板３とが接着される。 <Description of FIG. 3>
Next, FIG. 3 shows a semiconductor element package which is another embodiment of the present invention. A notch 8 is provided at the peripheral edge of the non-translucent substrate 3 over the entire circumference of the non-translucent substrate 3. And this notch 8 and the opening end 7 of the recessed part provided in the translucent protective material 1 are fitted. At the fitting site, the translucent protective material 1 and the non-translucent substrate 3 are bonded via the organic adhesive 4.

このような切り欠き８が設けられた非透光性基板３を採用した場合、非透光性基板３に設けられた切り欠き部８は、非透光性基板３自身によって半導体発光素子から発光する光が遮蔽される。   When the non-transparent substrate 3 provided with such a notch 8 is employed, the notch 8 provided in the non-transparent substrate 3 emits light from the semiconductor light emitting element by the non-transparent substrate 3 itself. Light to be shielded.

＜図４の説明＞
また、本発明の別の実施形態を図４に示した。図４に示したように、非透光性基板３の半導体発光素子２が搭載される面上の周縁近傍に溝９が形成されている。該溝９は、非透光性基板３の周縁近傍に、図４において上から見て矩形状、または、円形状に形成されてよい。溝９の深さは有機系接着剤４を塗布する深さに応じて決定すればよい。そして、該溝９と、透光性保護材１に設けられた凹部の先端である開口端７とを嵌合させる。その嵌合部位にて、有機系接着剤４を介して、透光性保護材１と非透光性基板３とが接着される。 <Description of FIG. 4>
Another embodiment of the present invention is shown in FIG. As shown in FIG. 4, a groove 9 is formed in the vicinity of the periphery on the surface on which the semiconductor light emitting element 2 of the non-translucent substrate 3 is mounted. The groove 9 may be formed in the vicinity of the periphery of the non-translucent substrate 3 in a rectangular shape or a circular shape as viewed from above in FIG. The depth of the groove 9 may be determined according to the depth to which the organic adhesive 4 is applied. And this groove | channel 9 and the opening end 7 which is the front-end | tip of the recessed part provided in the translucent protective material 1 are fitted. At the fitting site, the translucent protective material 1 and the non-translucent substrate 3 are bonded via the organic adhesive 4.

このような溝が形成された非透光性基板を採用した場合、非透光性基板３に形成された溝９によって、半導体発光素子から発光する光が遮蔽されるので有機系接着剤４の劣化を防止することが可能となる。   When a non-transparent substrate having such a groove is employed, light emitted from the semiconductor light emitting element is shielded by the groove 9 formed in the non-transparent substrate 3. It becomes possible to prevent deterioration.

＜図５の説明＞
さらに、本発明の図５に示した実施形態のように、非透光性基板３の半導体発光素子２が搭載される面上に、半導体発光素子２の周囲に光遮蔽板３′が配設される。そして、透光性保護材１に設けられた凹部の先端である開口端７と非透光性基板３上に配設された光遮蔽板３′の外周部とを嵌合させ、該嵌合部にて有機系接着剤４を介して非透光性基板３と透光性保護材１とが接着される。 <Description of FIG. 5>
Further, as in the embodiment shown in FIG. 5 of the present invention, a light shielding plate 3 ′ is disposed around the semiconductor light emitting element 2 on the surface on which the semiconductor light emitting element 2 is mounted of the non-transparent substrate 3. Is done. And the opening end 7 which is the front-end | tip of the recessed part provided in the translucent protective material 1 and the outer peripheral part of the light-shielding board 3 'arrange | positioned on the non-translucent board | substrate 3 are fitted, and this fitting The non-translucent substrate 3 and the translucent protective material 1 are bonded to each other through the organic adhesive 4.

光遮蔽板３′の高さは光を遮蔽するに十分な高さであればよい。この態様によれば、光遮蔽板３′で光が遮蔽された部位で透光性保護材１と非透光性基板３とが有機系接着剤４によって接着されるだけでなく、透光性保護材１を容易に非透光性基板３に固定することも可能となる。   The height of the light shielding plate 3 ′ may be high enough to shield light. According to this aspect, not only the translucent protective material 1 and the non-translucent substrate 3 are bonded by the organic adhesive 4 at the portion where the light is shielded by the light shielding plate 3 ′, but also the translucent property It is also possible to easily fix the protective material 1 to the non-translucent substrate 3.

このように光遮蔽板３′を配設することで、半導体発光素子２から発光する光を遮蔽することが可能となり、有機系接着剤４の劣化を防止することが可能となる。   By disposing the light shielding plate 3 ′ in this way, it is possible to shield the light emitted from the semiconductor light emitting element 2 and prevent the organic adhesive 4 from deteriorating.

＜図６の説明＞
そして、図６には、本発明の別の態様である複数の半導体発光素子２が封止された半導体発光素子パッケージを示した。非透光性基板３の半導体発光素子２が搭載される面上に、垂直断面形状が非透光性基板の中心近傍から外側にかけて厚みを増すように傾斜した反射面を持つ光反射板６が、半導体発光素子２の周囲に配設される。そして、透光性保護材１に設けられた凹部の先端である開口端７と非透光性基板３の周囲とを嵌合させ、該嵌合部にて有機系接着剤４を介して、非透光性基板３と透光性保護材１とが接着される。 <Description of FIG. 6>
FIG. 6 shows a semiconductor light emitting device package in which a plurality of semiconductor light emitting devices 2 according to another embodiment of the present invention are sealed. On the surface of the non-transparent substrate 3 on which the semiconductor light emitting element 2 is mounted, a light reflection plate 6 having a reflection surface whose vertical cross-sectional shape is inclined so as to increase in thickness from the vicinity of the center of the non-translucent substrate to the outside. The semiconductor light emitting element 2 is disposed around. And the opening end 7 which is the front-end | tip of the recessed part provided in the translucent protective material 1 and the circumference | surroundings of the non-translucent board | substrate 3 are fitted, and the organic adhesive 4 is passed through in this fitting part, The non-translucent substrate 3 and the translucent protective material 1 are bonded.

このような光反射板６を配設した非透光性基板１を採用した場合、光反射板６によって半導体発光素子２から発光される光が遮蔽されるので、有機系接着剤４の劣化を防ぐだけでなく、半導体素子パッケージの外部に拡散する光を集光することも可能となる。   When the non-transparent substrate 1 provided with such a light reflecting plate 6 is employed, the light emitted from the semiconductor light emitting element 2 is shielded by the light reflecting plate 6, so that the organic adhesive 4 is deteriorated. In addition to preventing, it is also possible to collect light that diffuses outside the semiconductor element package.

また、図６の実施形態のように、複数の半導体発光素子２を半導体発光素子パッケージに封止することで、半導体発光素子パッケージから取り出せる光の出力を高めることが可能である。   In addition, as in the embodiment of FIG. 6, by sealing a plurality of semiconductor light emitting elements 2 in a semiconductor light emitting element package, it is possible to increase the output of light that can be extracted from the semiconductor light emitting element package.

なお、半導体発光素子パッケージに封止される半導体発光素子２の個数、及び、光反射板６の配置は、該半導体発光素子パッケージに求められる光量や発光範囲に応じて、適宜変更してもよい。   Note that the number of the semiconductor light emitting elements 2 sealed in the semiconductor light emitting element package and the arrangement of the light reflecting plate 6 may be appropriately changed according to the light amount and the light emission range required for the semiconductor light emitting element package. .

＜各構成材の説明＞
続いて、本発明における半導体発光素子パッケージを構成する各構成部材について説明する。 <Description of each component>
Subsequently, each component constituting the semiconductor light emitting device package in the present invention will be described.

＜透光性保護材＞
本発明における透光性保護材１は、半導体発光素子２を保護するための部材であり、透光性の部材から構成されている。この透光性保護材１は、半導体発光素子パッケージの用途に応じて、例えば、図１に示すように、上面を平坦に加工してもよく、図２に示すように、上面を半球面状に加工してもよい。このような透光性保護材を採用することで、半導体発光素子から発生した光をパッケージの外部へ取り出すことが可能となる。 <Translucent protective material>
The translucent protective material 1 in the present invention is a member for protecting the semiconductor light emitting element 2 and is composed of a translucent member. Depending on the use of the semiconductor light emitting device package, the translucent protective material 1 may be processed to have a flat upper surface as shown in FIG. 1, for example. As shown in FIG. May be processed. By adopting such a translucent protective material, light generated from the semiconductor light emitting element can be taken out of the package.

前記透光性保護材１は、半導体発光素子２を物理的な衝撃から保護するために半導体発光素子パッケージにとって必要な部材である。   The translucent protective material 1 is a member necessary for the semiconductor light emitting device package in order to protect the semiconductor light emitting device 2 from physical impact.

前記透光性保護材１は、半導体発光素子２から発光された光を透過し、かつ、紫外線によって劣化しない無機材料であればよい。例えば、酸化ケイ素の結晶である石英、酸化アルミニウムの結晶であるサファイアが挙げられる。特に、サファイアは、高融点、高強度であり、さらに半導体発光素子から発光された光、特に紫外線に対しても良好な透光性を有するので、好ましい。このような透光性保護材で半導体発光素子を封止することにより、半導体発光素子から発光された光の出力を低下させることなく半導体発光素子パッケージの外部へ取り出すことが可能となる。   The translucent protective material 1 may be an inorganic material that transmits light emitted from the semiconductor light emitting element 2 and does not deteriorate due to ultraviolet rays. For example, quartz that is a crystal of silicon oxide and sapphire that is a crystal of aluminum oxide can be given. In particular, sapphire is preferable because it has a high melting point and high strength, and also has good translucency with respect to light emitted from a semiconductor light emitting element, particularly ultraviolet light. By sealing the semiconductor light emitting element with such a translucent protective material, it becomes possible to take out the semiconductor light emitting element package outside without reducing the output of light emitted from the semiconductor light emitting element.

また、前記透光性保護材の作製方法は特に制限はされないが、石英やサファイアのインゴットからレーザー等で削り出し、表面を研磨して作製することが可能である。このような方法を採用することによって、図１や図２に示したような形状の透光性保護材を作製することができる。石英やサファイアのインゴットは公知の方法、例えば、ブリッジマン法やＣＺ法などの単結晶成長技術により作製することが可能である。   Further, the method for producing the translucent protective material is not particularly limited, but it can be produced by grinding a quartz or sapphire ingot with a laser or the like and polishing the surface. By adopting such a method, a translucent protective material having a shape as shown in FIGS. 1 and 2 can be produced. Quartz and sapphire ingots can be produced by a known method, for example, a single crystal growth technique such as the Bridgman method or the CZ method.

＜半導体発光素子＞
本発明における半導体発光素子２は、ｎ型半導体層、発光層、ｐ型半導体層、金属電極層から構成されており、中でも、金属電極層は、単一、または複数の金属で構成されているので、空気中の酸素、または、空気中の水分によって酸化される。金属電極層の酸化が進行することによって金属電極層の抵抗が増大するので、半導体発光素子の発光効率が低下する。このような観点からも、半導体発光素子２を透光性保護材１で気密に保護する必要がある。半導体発光素子２は、一般的には、５ｍｍ×５ｍｍ角、高さが１ｍｍ程度の大きさである。 <Semiconductor light emitting device>
The semiconductor light emitting device 2 in the present invention is composed of an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and a metal electrode layer. Among these, the metal electrode layer is composed of a single metal or a plurality of metals. Therefore, it is oxidized by oxygen in the air or moisture in the air. As the oxidation of the metal electrode layer proceeds, the resistance of the metal electrode layer increases, so that the light emission efficiency of the semiconductor light emitting device decreases. Also from such a viewpoint, it is necessary to airtightly protect the semiconductor light emitting element 2 with the translucent protective material 1. The semiconductor light emitting element 2 generally has a size of about 5 mm × 5 mm square and a height of about 1 mm.

該半導体発光素子２の発光する光の波長は、特に制限されないが、本発明の半導体発光素子パッケージが紫外線の発光による封止材や有機系接着剤の劣化を防ぐという特徴を有することから、２１０ｎｍ〜３５０ｎｍ、特に、２５０ｎｍ〜３００ｎｍであることが好ましい。   The wavelength of the light emitted by the semiconductor light emitting device 2 is not particularly limited, but the semiconductor light emitting device package of the present invention has a feature of preventing deterioration of the sealing material and the organic adhesive due to ultraviolet light emission. ˜350 nm, in particular, 250 nm to 300 nm is preferable.

本発明において、半導体発光素子の実装方法は特に制限されず、フェースアップ実装、フリップチップ実装などを採用することができる。   In the present invention, the method for mounting the semiconductor light emitting element is not particularly limited, and face-up mounting, flip chip mounting, and the like can be employed.

＜非透光性基板＞
本発明における非透光性基板３は、半導体発光素子２を搭載することができ、かつ、半導体発光素子２から発光された光を遮蔽することが可能であれば、特に制限されないが、加工性、絶縁性および熱伝導性の観点から、セラミックス、特に、酸化アルミニウム、窒化アルミニウムであることが好ましい。 <Non-translucent substrate>
The non-transparent substrate 3 in the present invention is not particularly limited as long as the semiconductor light emitting element 2 can be mounted and the light emitted from the semiconductor light emitting element 2 can be shielded. From the viewpoints of insulation and thermal conductivity, ceramics, particularly aluminum oxide and aluminum nitride are preferred.

また、非透光性基板３の形状については、公知の形状を採用することができ、必要に応じて、非透光性基板３の表面を酸化アルミニウムなどの無機酸化物で覆う構造としてもよい。   Moreover, about the shape of the non-translucent substrate 3, a well-known shape can be employ | adopted and it is good also as a structure which covers the surface of the non-translucent substrate 3 with inorganic oxides, such as aluminum oxide, as needed. .

＜光遮蔽板＞
本発明における光遮蔽板３′は、半導体発光素子２を囲うように配設される。光遮蔽板３′は、半導体発光素子２から発光された光を遮蔽する材質であれば、特に制限されないが、絶縁性および熱伝導性の観点から、セラミックス、特に、酸化アルミニウム、窒化アルミニウムであることが好ましい。 <Light shielding plate>
The light shielding plate 3 ′ in the present invention is disposed so as to surround the semiconductor light emitting element 2. The light shielding plate 3 ′ is not particularly limited as long as it is a material that shields light emitted from the semiconductor light emitting element 2, but is ceramics, particularly aluminum oxide or aluminum nitride, from the viewpoint of insulation and thermal conductivity. It is preferable.

また、光遮蔽板３′をセラミックスで作製した場合、光遮蔽板３′の表面にアルミニウムの膜を形成してもよい。表面にアルミニウムの膜を形成することで、紫外光を遮蔽する効果を高めるだけでなく表面で紫外光が反射するので、半導体発光素子パッケージ内部で光が吸収されることなく、半導体発光素子パッケージ外部に光を取り出すことが可能となる。   When the light shielding plate 3 'is made of ceramics, an aluminum film may be formed on the surface of the light shielding plate 3'. Forming an aluminum film on the surface not only enhances the effect of shielding ultraviolet light, but also reflects the ultraviolet light on the surface, so that light is not absorbed inside the semiconductor light emitting device package, but outside the semiconductor light emitting device package It is possible to extract light.

そして、絶縁性が要求される部位においてアルミニウムの膜を形成する場合には、アルミニウムの膜を形成後、さらに、フッ化物、特に、フッ化マグネシウムを蒸着させることでアルミニウムの膜を絶縁することが可能となり、さらには、アルミニウムの酸化による光の吸収を防ぐことが可能となる。   When an aluminum film is formed at a site where insulation is required, it is possible to further insulate the aluminum film by depositing fluoride, particularly magnesium fluoride, after the aluminum film is formed. Further, it becomes possible to prevent light absorption due to oxidation of aluminum.

＜有機系接着剤＞
本発明における有機系接着剤４は、透光性保護材１と非透光性基板３との嵌合部にて、透光性保護材１と非透光性基板３とを接着させるために使用される。本発明において、有機系接着剤４は、半導体発光素子２から発光された光から遮蔽された部位に使用されているので、有機系接着剤４には半導体発光素子２から発光された光が照射されず、有機系接着剤４は劣化しない。そのため、様々な用途に応じて、有機系接着剤の材料を選択することが可能であるが、一般的には、接着力の強いエポキシ系接着剤が、好適に使用される。 <Organic adhesive>
In the present invention, the organic adhesive 4 is used for bonding the translucent protective material 1 and the non-translucent substrate 3 at the fitting portion between the translucent protective material 1 and the non-translucent substrate 3. used. In the present invention, since the organic adhesive 4 is used in a portion shielded from the light emitted from the semiconductor light emitting element 2, the organic adhesive 4 is irradiated with the light emitted from the semiconductor light emitting element 2. The organic adhesive 4 is not deteriorated. Therefore, it is possible to select a material for the organic adhesive according to various applications, but generally an epoxy adhesive having a strong adhesive force is preferably used.

＜電極＞
本発明における電極５は、非透光性基板３に嵌入され、半導体発光素子２に接続される。電極５は、半導体発光素子に電力を供給することが可能であれば、形状、材質は、特に制限されない。 <Electrode>
The electrode 5 in the present invention is fitted in the non-translucent substrate 3 and connected to the semiconductor light emitting element 2. The shape and material of the electrode 5 are not particularly limited as long as power can be supplied to the semiconductor light emitting element.

＜光反射板＞
本発明における光反射板６は、非透光性基板３の半導体発光素子２が搭載される面上に、半導体発光素子２を囲うように配設される。光反射板６は、半導体発光素子２から発光された光を遮蔽する材質であれば、特に制限されないが、絶縁性および熱伝導性の観点から、セラミックス、特に、酸化アルミニウムや窒化アルミニウムが好ましい。例えば、光反射板６を酸化アルミニウムで作製した場合では、半導体発光素子２から発光された光を集光することが可能となる。反射面はアルミニウムの膜を形成することが好ましい。 <Light reflector>
The light reflecting plate 6 in the present invention is disposed on the surface of the non-translucent substrate 3 on which the semiconductor light emitting element 2 is mounted so as to surround the semiconductor light emitting element 2. The light reflecting plate 6 is not particularly limited as long as it is a material that blocks light emitted from the semiconductor light emitting element 2, but ceramics, particularly aluminum oxide and aluminum nitride are preferable from the viewpoints of insulation and thermal conductivity. For example, when the light reflecting plate 6 is made of aluminum oxide, the light emitted from the semiconductor light emitting element 2 can be collected. The reflecting surface is preferably formed of an aluminum film.

なお、本発明は、上記実施形態に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を行うことは何等支障ない。例えば、上記実施形態の図１の透光性保護材の表面に凹凸加工を施してもよいし、光を反射する金属を蒸着してもよい。このように、保護材の表面に様々な加工を施すことで、半導体発光素子から発光する光の拡散性を自由に制御することが可能である。
In addition, this invention is not limited to the said embodiment, It does not have any trouble in making a various change within the range which does not deviate from the summary of this invention. For example, the surface of the translucent protective material of FIG. 1 of the above embodiment may be subjected to uneven processing, or a metal that reflects light may be deposited. As described above, by performing various processes on the surface of the protective material, it is possible to freely control the diffusibility of light emitted from the semiconductor light emitting element.

Claims (9)

半導体発光素子と該半導体発光素子をその上に搭載した非透光性基板と
半導体発光素子を収容しうる、下に開口した凹部を有する透光性保護材と、
半導体発光素子に電力を供給するための電極を有し、
透光性保護材の凹部に半導体発光素子を収容した状態で、透光性保護材と非透光性基板とが、半導体発光素子からの光が遮蔽された部位で有機系接着剤によって封止されてなる半導体発光素子パッケージ。 A semiconductor light-emitting element, a non-translucent substrate on which the semiconductor light-emitting element is mounted, and a translucent protective material having a recess opened below, which can accommodate the semiconductor light-emitting element;
An electrode for supplying power to the semiconductor light emitting device;
In a state where the semiconductor light emitting element is accommodated in the recess of the light transmitting protective material, the light transmitting protective material and the non-light transmitting substrate are sealed with an organic adhesive at a portion where light from the semiconductor light emitting element is shielded. A semiconductor light emitting device package. 透光性保護材の凹部の開口端と、非透光性基板の周縁部とが嵌合してなり、
透光性保護材と非透光性基板とが、半導体発光素子からの光が非透光性基板によって遮蔽された嵌合部で有機系接着剤によって封止されてなる請求項１記載の半導体発光素子パッケージ。 The opening end of the concave portion of the translucent protective material and the peripheral portion of the non-translucent substrate are fitted,
2. The semiconductor according to claim 1, wherein the translucent protective material and the non-translucent substrate are sealed with an organic adhesive at a fitting portion where light from the semiconductor light emitting element is shielded by the non-translucent substrate. Light emitting device package. 透光性保護材の凹部の開口端と、非透光性基板の周縁に設けられた切り欠き部とが嵌合してなり、
透光性保護材と非透光性基板とが、半導体発光素子からの光が非透光性基板によって遮蔽された嵌合部で有機系接着剤によって封止されてなる請求項１記載の半導体発光素子パッケージ。 The opening end of the concave portion of the translucent protective material and the notch provided on the periphery of the non-translucent substrate are fitted,
2. The semiconductor according to claim 1, wherein the translucent protective material and the non-translucent substrate are sealed with an organic adhesive at a fitting portion where light from the semiconductor light emitting element is shielded by the non-translucent substrate. Light emitting device package. 透光性保護材の凹部の開口端と、非透光性基板上の周縁近傍に設けられた溝とが嵌合してなり、
透光性保護材と非透光性基板とが、半導体発光素子からの光が非透光性基板によって遮蔽された嵌合部で有機系接着剤によって封止されてなる請求項１記載の半導体発光素子パッケージ。 The opening end of the concave portion of the translucent protective material is fitted with a groove provided in the vicinity of the peripheral edge on the non-translucent substrate,
2. The semiconductor according to claim 1, wherein the translucent protective material and the non-translucent substrate are sealed with an organic adhesive at a fitting portion where light from the semiconductor light emitting element is shielded by the non-translucent substrate. Light emitting device package. さらに、非透光性基板上の半導体発光素子の周囲に光遮蔽板を有し、
透光性保護材と非透光性基板とが、半導体発光素子からの光が光遮蔽板によって遮蔽された部位で有機系接着剤によって封止されてなる請求項１記載の半導体発光素子パッケージ。 Furthermore, it has a light shielding plate around the semiconductor light emitting element on the non-translucent substrate,
2. The semiconductor light emitting device package according to claim 1, wherein the light transmissive protective material and the non-light transmissive substrate are sealed with an organic adhesive at a portion where light from the semiconductor light emitting device is shielded by the light shielding plate. さらに、非透光性基板の上に、垂直断面形状が非透光性基板の中心近傍から外側にかけて厚みを増すように傾斜した反射面を持つ光反射板を有し、
透光性保護材と非透光性基板とが、半導体発光素子からの光が光反射板によって遮蔽された部位で有機系接着剤によって封止されてなる請求項１記載の半導体発光素子パッケージ。 Further, on the non-transparent substrate, a light reflecting plate having a reflecting surface inclined so that the vertical cross-sectional shape increases in thickness from the vicinity of the center of the non-transparent substrate to the outside,
2. The semiconductor light emitting device package according to claim 1, wherein the light transmissive protective material and the non-light transmissive substrate are sealed with an organic adhesive at a portion where light from the semiconductor light emitting device is shielded by the light reflecting plate. 透光性保護材が、紫外線透過性無機材料である請求項１記載の半導体発光素子パッケージ。 2. The semiconductor light emitting device package according to claim 1, wherein the light transmissive protective material is an ultraviolet light transmissive inorganic material. 紫外線透過性無機材料が石英、又は酸化アルミニウムである請求項７記載の半導体発光素子パッケージ。 The semiconductor light emitting device package according to claim 7, wherein the ultraviolet transparent inorganic material is quartz or aluminum oxide. 半導体発光素子から発光する光の波長が２５０〜３００ｎｍである請求項１記載の半導体発光素子パッケージ。
The semiconductor light emitting device package according to claim 1, wherein the wavelength of light emitted from the semiconductor light emitting device is 250 to 300 nm.
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