JP2006040915A - Method and apparatus of manufacturing semiconductor device, and method of manufacturing electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit peeling of the photoresist film of the edge part of a large-sized substrate or a thin film. <P>SOLUTION: When circuit patterns 51a-51d formed in a reticle 50 are transferred to a resist film on a large-sized substrate 1 which picks a plurality of semiconductor devices and patterned, a non-exposure region 1b of fixed width to which the circuit patterns 51a-51d are not transferred, is formed by a substrate edge blind 41 on the entire periphery of the edge part 1a of the large-sized substrate 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method of manufacturing a semiconductor device that projects and exposes a circuit pattern formed on a reticle onto a resist film on a large substrate, a manufacturing apparatus thereof, and a method of manufacturing an electro-optical device.

  In general, in the manufacturing process of a semiconductor device, a reticle (also referred to as a photomask) is formed on a large substrate using a reduction projection exposure apparatus (hereinafter referred to as “stepper”) using a step-and-repeat method. In many cases, a plurality of semiconductor devices are manufactured on a large substrate by repeatedly projecting and exposing the circuit pattern on the photoresist film formed on the large substrate.

  The number of semiconductor devices manufactured from one large substrate is determined depending on the size of the large substrate and the size of the semiconductor device formed there. In order to improve production efficiency and product yield, it is desirable to manufacture a large number of semiconductor devices on a single large substrate, but when trying to increase the mounting efficiency of semiconductor devices, depending on the layout, One corner of the exposure area (hereinafter referred to as “shot area”) formed on the large substrate by the reticle is likely to be close to the edge portion of the large substrate, or a plurality of one shot area is formed by one reticle. When the circuit pattern is formed, one circuit pattern in one shot region is projected beyond the edge portion of the large substrate.

  However, the photoresist film and each thin film formed on the edge portion of the large substrate are incomplete and easily cause peeling, and when the circuit pattern is formed near the edge portion of the large substrate or beyond the edge portion, Impurities such as a photoresist film and a thin film peeled off from the edge portion are likely to adhere to other effective circuit patterns, causing a product defect.

Therefore, for example, in Patent Document 1 (Japanese Patent Laid-Open No. 2003-158067), a single-shot 6-chip (one that forms six circuit pattern regions in one shot region) reticle is used, and a plurality of substrates are formed on a large substrate. When forming a semiconductor device, a masking blade provided in a stepper is formed in a large-sized reticle blind having an opening corresponding to a shot area of the reticle, and an L-shape that can move independently of the reticle blind. A pair of reticle blinds, and when one corner of the shot area limited by the large-size reticle blind is related to the edge portion of the large substrate, the pair of reticle blinds formed in an L shape are used. Cover and conceal the circuit pattern related to the edge, and the circuit pattern relates to the edge of the large substrate Preventing, techniques to prevent peeling of the photoresist film and the thin edge portion is disclosed.
JP 2003-158067 A

  However, in the technique disclosed in Patent Document 1 described above, for example, as shown in FIG. 7, when a shot region 110 is to be formed on a large substrate 1 using a one-shot four-chip reticle, a large-sized substrate is used. Since the circuit pattern region 110d that is close to or crosses the edge portion 100a of the substrate 1 is masked by an L-shaped reticle blind, in the etching process, the masked portion and a region that has not been exposed using the reticle (A region shown by hatching in FIG. 7, hereinafter, this region is referred to as a “non-pattern region”) 100 b, no circuit pattern is formed, and each thin film is left as it is.

  As a result, a step is generated between the non-pattern area 100b indicated by hatching in FIG. 7 and the effective circuit pattern areas 110a to 110d. If a step is generated between the effective circuit pattern regions 110a to 110d and the non-pattern region 110e, for example, in the etching process, the etching rate slightly varies due to the difference in pattern density in the vicinity of the step portion, and the pattern dimension varies. Loading effect is likely to occur.

  Further, when flattening the unevenness of the surface of each thin film by CMP (Chemical Mechanical Polishing) processing, there is a step at the boundary between the non-pattern region 110e and the circuit pattern regions 110a to 110d. Then, due to the difference in pattern density, sufficient flattening cannot be realized, and the product quality is adversely affected.

  In view of the above circumstances, the present invention prevents the peeling of the photoresist film or thin film on the edge portion of the large substrate and reduces the step at the boundary between the non-pattern region and the circuit pattern region formed on the large substrate. An object of the present invention is to provide a semiconductor device manufacturing method, a manufacturing apparatus thereof, and an electro-optical device manufacturing method capable of suppressing the occurrence of a loading effect and more precisely performing flattening of each thin film.

  In order to achieve the above object, a first invention provides a method of manufacturing a semiconductor device in which a circuit pattern formed on a reticle is transferred to a resist film on a large substrate on which a plurality of semiconductor devices can be formed and patterned. In the edge portion of the large substrate, a region having a predetermined width is not exposed so that the circuit pattern is not transferred.

  In such a configuration, an area having a predetermined width is not exposed so that the circuit pattern formed on the reticle is not transferred to the entire periphery of the edge portion of the large substrate. Even if it is applied to the edge portion, the edge portion is not exposed, and therefore the photoresist film or thin film at the edge portion can be prevented from being peeled off. Further, since the projection exposure can be performed up to the inner periphery of the area where the circuit pattern is not exposed, the step generated at the boundary with the effective circuit pattern area due to the dummy pattern formed on the inner periphery of the unexposed area. Is eliminated, and the generation of a loading effect during etching can be suppressed. Further, since there is no step at the boundary portion between the effective circuit pattern and the dummy pattern on the large substrate, the pattern density at the boundary portion becomes substantially equal. As a result, planarization can be performed more precisely in the CMP process. .

  A second invention is characterized in that, in the first invention, the region of the predetermined width is not exposed in the entire periphery of the edge portion of the large substrate.

  In such a configuration, since a region having a predetermined width is not exposed in the entire periphery of the edge portion of the large substrate, peeling of the photoresist film and the thin film on the edge portion of the large substrate can be more reliably prevented.

  A third invention is characterized in that, in the first or second invention, an effective shot region exposed so that the circuit pattern is transferred is formed on the large substrate so as to be surrounded by the region having the predetermined width. To do.

  In such a configuration, the effective shot area that is exposed so that the circuit pattern of the large substrate is transferred is formed so as to be surrounded by the area of a predetermined width, so that it is projected to the inner periphery of the area where the circuit pattern is not exposed. By exposing, a dummy pattern can be formed in the inner periphery of the unexposed area, and the step generated at the boundary with the effective circuit pattern area can be eliminated.

  According to a fourth invention, in the first to third inventions, there is provided a substrate edge blind for forming a non-exposure region around the entire periphery of the edge portion of the large substrate.

  In such a configuration, a non-exposure area having a constant width is formed on the entire periphery of the edge portion of the large substrate with the substrate edge blind, so that even if the shot region projected by the reticle hits the edge portion of the large substrate. The edge portion is not exposed, and therefore, the photoresist film and the thin film at the edge portion can be prevented from being peeled off.

  A fifth invention is characterized in that, in the first to fourth inventions, the circuit pattern formed on the reticle is repeatedly projected and exposed on the large substrate while the reticle and the large substrate are relatively moved.

  In such a configuration, the circuit pattern formed on the reticle is repeatedly projected and exposed on the large substrate while relatively moving the reticle and the large substrate. Therefore, when performing repeated exposure, one shot area of the reticle is used. Even if the portion is on the edge portion of the large substrate, the edge portion is not exposed, so that the projection exposure work can be performed efficiently.

  According to a sixth aspect of the present invention, in a semiconductor device manufacturing apparatus for patterning by transferring a circuit pattern formed on a reticle to a resist film on a large substrate capable of forming a plurality of semiconductor devices, the large substrate is positioned. A substrate stage placed on the substrate stage, a projection exposure apparatus disposed above the substrate stage, and an optical path extending from the projection exposure apparatus to the large substrate, and at a predetermined edge portion of the large substrate And a substrate edge blind for forming a non-exposed region having a width.

  In such a configuration, a substrate edge blind is interposed in the middle of the optical path from the projection exposure apparatus to the large substrate, and a non-exposure region having a predetermined width is formed at the edge portion of the large substrate by the substrate edge blind. Therefore, even if the shot area projected by the reticle is applied to the edge portion of the large substrate, the edge portion is not exposed, and therefore the photoresist film or thin film at the edge portion can be prevented from being peeled off. Furthermore, since the circuit pattern can be projected and exposed to the inner periphery of the non-exposure area, the step generated at the boundary with the effective circuit pattern area is eliminated by the dummy pattern formed on the inner periphery of the non-exposure area. Generation of a loading effect during etching can be suppressed. Further, since there is no step at the boundary portion between the effective circuit pattern and the dummy pattern on the large substrate, the pattern density at the boundary portion becomes substantially equal. As a result, planarization can be performed more precisely in the CMP process. .

  A seventh invention is the non-exposure region of the large substrate according to the sixth invention, wherein the circuit pattern formed on the reticle by the relative movement of the projection exposure apparatus and the substrate stage is repeatedly projected and exposed on the large substrate. A circuit pattern is patterned on the entire inner periphery of the substrate, and the substrate edge blind is moved integrally with the substrate stage.

  In such a configuration, since the substrate edge blind is moved integrally with the substrate stage, even when the circuit pattern is repeatedly projected and exposed on the large substrate by the step-and-repeat relative movement, Since the positional relationship between the large substrate and the substrate edge blind is always constant, good patterning can be performed.

  An eighth invention is characterized in that, in the sixth invention, the projection exposure apparatus projects and exposes the entire large substrate in one shot with respect to the large substrate.

  In such a configuration, the edge portion of the large substrate is not exposed even when the circuit pattern is patterned by projecting and exposing the entire large substrate in one shot to the large substrate. And peeling of the thin film can be prevented.

  According to a ninth invention, in the sixth to eighth inventions, the substrate edge blind is interposed between the projection exposure apparatus and the large substrate.

  In such a configuration, by interposing the substrate edge blind between the projection exposure apparatus and the large substrate, the substrate edge blind can be operated independently of the projection exposure apparatus, and the position adjustment with respect to the large substrate can be performed. It becomes easy.

  A tenth aspect of the invention is characterized in that, in the sixth to eighth aspects of the invention, the substrate edge blind is interposed in the middle of the projection exposure apparatus.

  In such a configuration, the substrate edge blind and the projection exposure apparatus can be assembled integrally by interposing the substrate edge blind in the middle of the projection exposure apparatus, and adjustment with the optical path in the projection exposure apparatus is easy. Become.

  According to an eleventh aspect of the invention, there is provided a method for manufacturing an electro-optical device, including a step of manufacturing a semiconductor device using the method for manufacturing a semiconductor device according to the first to fourth aspects.

  In such a configuration, the method of manufacturing the electro-optical device includes the step of manufacturing the semiconductor device by the method of manufacturing the semiconductor device according to the first invention or the second invention. Since the non-exposure area of a certain width that does not transfer the circuit pattern formed on is formed, even if the shot area projected by the reticle hits the edge of the large substrate, this edge is not exposed. The peeling of the photoresist film or thin film can be prevented.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic configuration diagram of a stepper.

  Reference numeral 10 in the figure denotes a substrate stage, and the large substrate 1 is placed on the substrate stage 10. The large substrate 1 is made of, for example, quartz, glass, or silicon, and a large number of semiconductor devices are formed on the large substrate 1. Although the large substrate 1 shown in the drawing is circular, it may be rectangular, and although not shown, positioning portions such as orientation flats and notches are formed on the large substrate 1 in a predetermined manner.

  The large substrate 1 is applied with a photoresist film on its surface, and then placed on the substrate stage 10 and held in a predetermined position.

  In addition, a stepper 20 is provided above the substrate stage 10. The stepper 20 performs patterning by transferring a circuit pattern formed on a reticle (also referred to as “exposure mask”) disposed on the stepper 20 to a photoresist film coated on the large substrate 1 by photolithography. Is what you do.

  The stepper 20 includes a light source 21 having a light emitter 21a such as a high-pressure mercury lamp, and ultraviolet rays emitted from the light source 21 pass through the first condenser lens 22 and are transmitted through the interference filter 23 to a specific wavelength (for example, i-line). Then, the light is incident on the fly-eye lens 24 and the in-plane illuminance is made uniform. Thereafter, the ultraviolet rays emitted from the fly-eye lens 24 are sequentially transmitted through the second condenser lens 25, the reticle blind (also referred to as “masking blade”) 26, the third condenser lens 27, the reticle stage 28, and the reduction projection lens 29. Finally, the circuit pattern formed on the reticle 50 mounted on the reticle stage 28 is reduced to the photoresist film applied on the surface of the large substrate 1 mounted on the substrate stage 10. Projected.

  As shown in FIG. 2, the reticle 50 is a one-shot four-chip type in this embodiment, that is, four circuit patterns 51 a to 51 d are formed in one shot region 51. The reticle 50 may be other than one shot of four chips, and of course, may be of a one shot one chip type.

  Further, as shown in FIG. 3, the reticle blind 26 has reticle light shielding plates 26a to 26d that are allowed to move forward and backward in four directions in the horizontal direction, and each of the reticle light shielding plates 26a to 26d completely shields light. It can be made of a metal such as chromium or Al.

  When each of the reticle light shielding plates 26a to 26d faces the middle of the optical path from four directions in the horizontal direction, each of the reticle light shielding plates 26a to 26d forms a rectangular opening in the middle of the optical path. This opening corresponds to the shot area 51 of the reticle 50. By surrounding the outline of the shot area 51 with this opening, projection and exposure to unnecessary portions can be suppressed.

  A substrate edge blind 41 that moves integrally with the substrate stage 10 is disposed between the reduction projection lens 29 of the stepper 20 and the substrate stage 10. The substrate edge blind 41 has a pair of opposing substrate edge light shielding plates 42, 43, and the rear ends of the substrate edge light shielding plates 42, 43 are connected to the actuators 45a, 45b via arms 44a, 44b. It is supported so that it can advance and retreat in the horizontal direction. Each of the substrate edge light shielding plates 42 and 43 is formed of a metal such as chromium or Al that can completely shield light, like the reticle light shielding plates 26a to 26d of the reticle blind 26.

  As shown in FIG. 4, the inner peripheral surfaces 42a and 43a of the respective substrate edge light shielding plates 42 and 43 are formed in a semicircular shape, and the respective substrate edge light shielding plates 42 and 43 are close to each other, and the opening side thereof. When the joining step portions 42b and 43b formed at the end portions are joined, circular openings are formed in the middle of the optical path on the inner peripheral surfaces 42a and 43a of the light shielding plates 42 and 43 for both substrate edges. (See FIG. 5).

  The circular openings formed on the inner peripheral surfaces 42a and 43a of the light shielding plates 42 and 43 for both substrate edges mask the edge portion 1a of the large substrate 1, and as shown in FIG. The substrate 1 has a fixed width (for example, about 3 mm) on the inner peripheral surfaces 42a and 43a of the light shielding plates 42 and 43 for both substrate edges, as shown by hatching in FIG. An exposure region 1b is formed.

  Next, an exposure procedure of the large substrate 1 using the stepper 20 having such a configuration will be described.

  First, the large substrate 1 having a photoresist film coated on the surface thereof is placed on the substrate stage 10 and positioned and then held and fixed. Next, the pair of substrate edge light shielding plates 42 and 43 constituting the substrate edge blind 41 arranged on the substrate stage 10 are horizontally moved in the direction of approaching each other by driving the actuators 45a and 45b, and the opening ends thereof are moved. The joint step portions 42b and 43b formed on the respective portions are fitted.

  Then, as shown in FIG. 5, circular openings are formed in the middle of the optical path on the inner peripheral surfaces 42a and 43a of the light shielding plates 42 and 43 for both substrate edges. In the opening, as shown by hatching in FIG. 6B, a non-exposed region 1b having a constant width (for example, about 3 mm) is formed in the edge portion 1a of the large substrate 1. In other words, the large substrate 1 has an effective shot area formed on the inner peripheral side thereof by the non-exposed area 1b.

  On the other hand, the reticle 50 is set on the reticle stage 28 of the stepper 20 disposed above the substrate stage 10. As shown in FIG. 2, in the reticle 50 according to the present embodiment, four circuit patterns 51a to 51d are formed in one shot region 51, and therefore, four circuit patterns 51a to 51d are formed on the large substrate 1 in one shot. Is transferred to the photoresist film.

  Next, an opening is formed in the middle of the optical path by each of the reticle light shielding plates 26a to 26d constituting the reticle blind 26, and the outline of the shot region 51 of the reticle 50 is surrounded by this opening (see FIG. 3). It is set so that light is transmitted only from the shot area 51.

  Next, a step-and-repeat type relative movement by the stepper 20 and the substrate stage 10 is performed on the shot region 51 of the reticle 50 at a preset position of the photoresist film applied to the large substrate 1. The four-chip circuit patterns 51a to 51d are repeatedly reduced and projected for exposure. At this time, since the substrate edge blind 41 moves integrally with the substrate stage 10, the inner peripheral surfaces 42 a and 43 a of the substrate edge light shielding plates 42 and 43 and the large substrate 1 always maintain a fixed positional relationship. .

  Further, as shown in FIG. 5, a part of the circuit patterns 51 a to 51 d formed in the shot region 51 of the reticle 50 is formed by inner peripheral surfaces 42 a of the substrate edge light shielding plates 42 and 43 constituting the substrate edge blind 41. , 43a, only the inner peripheral side of the inner peripheral surfaces 42a, 43a is exposed in this region. As a result, as shown by hatching in FIG. 6A, circuit patterns 51a to 51d for four chips formed in the shot region 51 of the reticle 50 are reduced and projected in a region crossing the edge portion 1a of the large substrate 1. However, the edge portion 1a of the large substrate 1 is not exposed. Therefore, as shown in FIG. 6B, even when the circuit pattern is reduced and projected on the entire large substrate 1, the non-exposed region 1b having a predetermined width formed on the edge portion 1a of the large substrate 1 is not exposed. The inside of the non-exposure area 1b is exposed by being reduced in size and projected on the entire circuit pattern. However, the circuit pattern in contact with the non-exposure region 1b is a dummy pattern that is not established as a product.

  Then, after the projection and exposure of the circuit pattern on the entire large substrate 1 are completed, the large substrate 1 is immersed in an etching solution to perform an etching process, and the circuit pattern is formed on the thin film formed under the photoresist film. Form. Thereafter, the photoresist film is removed using a removing solution made of a mixed solution of sulfuric acid and hydrogen peroxide solution (sulfuric acid / hydrogen peroxide solution) or a chemical solution such as acetone, ethanol, toluene and the like.

  As described above, in this embodiment, when the circuit pattern is transferred onto the large substrate 1, the non-exposed region 1 b having a certain width is formed on the edge portion 1 a of the large substrate 1 by the substrate edge blind 41. Even if 50 shot areas 51 are projected in a reduced size beyond the edge portion 1a of the large substrate 1, the edge portion 1a of the large substrate 1 is not exposed. Therefore, the photoresist film or thin film formed on the edge portion 1a is not exposed. Peeling can be prevented beforehand.

  In addition, since the circuit pattern is formed on the entire inside of the non-exposure region 1b of the large substrate 1, dummy patterns are formed outside most of the effective circuit patterns as shown in FIG. 6B. . Therefore, a step is not formed at the boundary between the effective circuit pattern and the dummy pattern, and the occurrence of a loading effect during etching can be suppressed.

  Further, since there is no step at the boundary portion between the effective circuit pattern and the dummy pattern on the large substrate 1, the pattern density at the boundary portion becomes substantially equal, and as a result, planarization can be performed more precisely in the CMP process. it can.

  The present invention is not limited to the above-described embodiment. For example, the stepper 20 has been described only for the reduced projection, but it is needless to say that the present invention can be applied to an equal magnification projection. Furthermore, the present embodiment can also be applied to an apparatus that projects and exposes the entire large substrate 1 in one shot without projecting the circuit pattern onto the large substrate 1. In this case, the substrate edge blind 41 does not necessarily need to be interposed between the projection exposure apparatus and the substrate stage, and may be interposed in the middle of the optical path of the projection exposure apparatus.

  The semiconductor device of the present invention can be incorporated into circuits of various electronic devices and electro-optical devices. For example, in electronic devices, transfer gates, inverters, clocked inverters, logic gates (NAND, NOR, etc.), shift registers, level shifters, buffer circuits, differential amplifiers, current mirror operational amplifiers, D / A converters, A / D converter, DRAM, SRAM, arithmetic circuit adder, microcomputer, DSP (Digital Signal Processor), analog switch, and CPU.

  In addition, in the electro-optical device, for example, a TFT active matrix driving type liquid crystal device, a passive matrix type liquid crystal device, a liquid crystal device provided with a TFD (thin diode) as a switching element, an electroluminescence device, an organic electroluminescence device, Incorporated into plasma display devices, electrophoretic display devices, devices using electron-emitting devices (Field Emission Dispiay and Surface-Conductin Electron-Emitter Display), DLP (Digital Light Processing) and DMD (Digital Micromirror Device) It is possible.

Schematic block diagram of a reduction projection exposure apparatus Schematic plan view of the reticle A plan view showing a state in which the contour of the shot area of the reticle is surrounded by a reticle light shielding plate A perspective view showing the relationship between a large substrate and a substrate edge blind A plan view showing a state in which a reticle shot area is projected in a reduced scale on a large substrate (A) is a plan view showing a relationship between a shot area of a reticle and a large substrate, (b) a plan view showing a state in which a non-exposed region is formed at an edge portion of the large substrate. Plan view showing relationship between shot area of conventional reticle and large substrate

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Large substrate, 1a ... Edge part, 1b ... Non-exposure area, 10 ... Substrate stage, 20 ... Stepper, 26 ... Reticle blind, 26a-26d ... Reticle shading plate, 28 ... Reticle stage, 41 ... Substrate edge blind, 42, 43 ... light shielding plate for substrate edge, 42a, 43a ... inner peripheral surface, 50 ... reticle, 51 ... exposure region, 51a-51d ... circuit pattern

Claims (11)

In a method for manufacturing a semiconductor device, patterning is performed by transferring a circuit pattern formed on a reticle to a resist film on a large substrate on which a plurality of semiconductor devices can be formed.
A method of manufacturing a semiconductor device, wherein an area having a predetermined width is not exposed at an edge portion of the large substrate so that the circuit pattern is not transferred.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the region having the predetermined width is not exposed in the entire periphery of the edge portion of the large substrate.   3. The method of manufacturing a semiconductor device according to claim 1, wherein an effective shot region exposed so as to transfer the circuit pattern is formed on the large substrate so as to be surrounded by the region having the predetermined width. .   The method of manufacturing a semiconductor device according to claim 1, further comprising a substrate edge blind that forms a non-exposed region around the entire periphery of the edge portion of the large substrate. 5. The semiconductor device according to claim 1, wherein the circuit pattern formed on the reticle is repeatedly projected and exposed on the large substrate while the reticle and the large substrate are relatively moved. Production method. In a semiconductor device manufacturing apparatus that performs patterning by transferring a circuit pattern formed on a reticle to a resist film on a large substrate capable of forming a plurality of semiconductor devices.
A substrate stage for placing the large substrate in a positioned state;
A projection exposure apparatus disposed above the substrate stage;
An apparatus for manufacturing a semiconductor device, comprising: a substrate edge blind interposed in the middle of an optical path from the projection exposure apparatus to the large substrate and forming a non-exposure region having a predetermined width at an edge portion of the large substrate . The circuit pattern formed on the reticle by the relative movement between the projection exposure apparatus and the substrate stage is repeatedly projected and exposed on the large substrate, and the circuit pattern is patterned on the entire inner periphery of the non-exposed region of the large substrate. And
7. The semiconductor device manufacturing apparatus according to claim 6, wherein the substrate edge blind is moved integrally with the substrate stage. 7. The semiconductor device manufacturing apparatus according to claim 6, wherein the projection exposure apparatus projects and exposes the entire large substrate in one shot with respect to the large substrate. 9. The apparatus for manufacturing a semiconductor device according to claim 6, wherein the substrate edge blind is interposed between the projection exposure apparatus and the large substrate. 9. The apparatus for manufacturing a semiconductor device according to claim 6, wherein the substrate edge blind is interposed in the middle of the projection exposure apparatus. An electro-optical device manufacturing method comprising a step of manufacturing a semiconductor device using the method for manufacturing a semiconductor device according to claim 1.

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