JP2006013144A - Manufacturing method for optical semiconductor package, and optical semiconductor package manufactured thereby - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an optical semiconductor package which is inexpensive and has high quality. <P>SOLUTION: The manufacturing method is disclosed for the optical semiconductor package 30 manufactured by cutting the reverse surface of a reflecting substrate material 310 formed by coating with a metal thin film 313 the top surface of an upper insulating substrate material 312 having a plurality of reflecting holes 11 whose flanks slant in a cone shape. The top surface of a base substrate material 120 has a plurality of electrode plates on a lower insulating substrate material 121, is mounted with a plurality of light emitting elements 24 conducting to the electrode plates after a joined body, and is formed by putting the light emitting elements 24 in the reflecting holes 11. As the reflecting substrate material 310, a reflecting substrate material 310 is used which has the metal thin film 313 for a reflector formed in a package surface area 11P forming a portion of the top surface of the upper insulating substrate material 312 and on a wiring pattern 305 conducting to the package surface area 11P. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an optical semiconductor package, and more particularly to a manufacturing method thereof.

  An optical semiconductor package is an optical semiconductor element such as a light emitting diode (hereinafter referred to as LED) or a phototransistor packaged for convenient mounting. An LED is a compound semiconductor such as AlInGaP or GaN that is PN-junctioned on a sapphire substrate, and a forward current is passed through it to obtain visible or infrared light emission. Recently, display, communication, measurement, Widely used for control. On the other hand, recent electronic devices are pursuing smaller size and lighter weight as well as higher performance and more functions. Furthermore, the range of application is expanding to fields where heat dissipation and reliability are important. For this reason, electronic components used in electronic devices are often used in the form of packaged LED elements so that they can be surface-mounted on a printed wiring board. Such an LED package generally has a substantially cubic shape, and is mounted and used on a wiring pattern on a printed circuit board by fixing means such as reflow soldering. It is required to use it efficiently.

  One type of optical semiconductor package is an optical sensor. This is a component in which a light emitting unit including a light emitting element (for example, an infrared LED) and a light receiving unit including a light receiving element (for example, a phototransistor) are packaged. This optical sensor emits light from the light emitting part, and the reflected light (or transmitted light) of the emitted light from the object to be detected is received by the light receiving part to detect the state (existence etc.) of the object to be detected. It is used for various types of information detection (for example, paper detection of a copying machine). The optical sensor package is the same as the LED package in that it is required to emit light of the light emitting element to the outside with high efficiency. The following description will be made with reference to FIGS. 5 and 6 while taking an LED package as an example among optical semiconductor packages.

  FIG. 5 is a perspective view showing a conventional LED package, and FIG. 6 is a cross-sectional view of a main part of the LED package in FIG. The configuration of the LED package 30 is roughly divided into a reflective substrate 10 and a base substrate 20. The reflective substrate 10 includes an upper insulating substrate 12 having a slit-like reflective hole 11 having a small diameter from the upper surface toward the lower surface, and a reflector 13 in which the upper surface of the upper insulating substrate 12 and the inclined surface of the reflective hole 11 are coated with a metal thin film. However, as will be described later, the reflector 13 has a different structure depending on its forming method, and FIG. 6 shows a cross-sectional shape by a plating method. The base substrate 20 has a pair of lead frames 22 and 23 for the anode electrode and the cathode electrode on the surface of the lower insulating substrate 21. Further, the LED element 24 provided so as to be conductive on the lead frame 23 is electrically connected to the lead frame 22 via the wire 25. Then, the upper surface of the base substrate 20 and the lower surface of the reflective substrate 10 are bonded together so that the LED element 24 fits in the reflective hole 11. The reflection hole 11 surrounding the LED element 24 is filled with the sealing material 14 after bonding. Hereinafter, a method for manufacturing such an LED package 30 will be described mainly with reference to FIGS. 7, 8, and 9. The LED package 30 includes a reflective substrate material having a plurality of reflective substrate portions in advance. Since a base substrate material having a plurality of base substrate portions is prepared and bonded together before being cut out as the LED package 30, first the description of the reflective substrate material will be started.

  FIG. 7A is a perspective view of a conventional reflective substrate material. There are a plating method and a vapor deposition method as a method for forming a reflector part of a conventional reflective substrate material. FIG. 8 is a cross-sectional view in each manufacturing process when a reflective substrate material is produced by a conventional plating method, and FIG. It is sectional drawing when forming the metal thin film for reflectors of a reflective substrate material with the conventional vapor deposition method.

  The reflective substrate material 110 shown in part (a) in FIG. 7 is a metal thin film in which the upper surface (including the reflective hole surface) of the upper insulating substrate material 112 in which a plurality of reflective holes 11 are provided in a resin plate becomes the reflector 13. The metal thin film 113 has a different structure depending on its manufacturing method. That is, in the case of the plating method, a Ni thin film and an Ag thin film are provided on a Cu thin film as a base metal thin film, and in the vapor deposition method, it is composed of an Ag thin film.

  First, the manufacturing method of the reflective substrate material 110M manufactured by the conventional plating method will be described with reference to FIG. 8. The upper insulating substrate material 112 having a plurality of reflective holes 11 as shown in the step (a) of FIG. In the step (b), a Cu thin film 113CU is formed on the entire surface of the upper insulating substrate material 112 by using an electroless plating method. In step (c), after applying a photoresist 115 on the Cu thin film 113CU, the photoresist 115 is exposed by irradiating ultraviolet rays 116 from the upper surface side (the back surface side is not exposed), and further exposed by development after exposure. The photoresist 115 that has not been removed is removed, leaving the photoresist 115 only on the surface side. Further, in the step (d), the Cu thin film 113CU on the back surface where the photoresist coating has been removed is peeled off, and then the photoresist 115 exposed in the step (e) is removed, and the Cu thin film 113CU is removed from the upper insulating substrate material 112. In step (f), the Ni thin film 113NI and the Ag thin film 113AG are formed on the surface of the Cu thin film 113CU using the electrolytic plating method.

  Next, another method for manufacturing the reflective substrate material 110 will be described. FIG. 9 is a cross-sectional view of the reflective substrate material 110J when the reflector portion is formed by a conventional vapor deposition method. In this case, vapor deposited metal (Ag) heated and evaporated by a vapor deposition apparatus (not shown) is laminated on the upper surface of the upper insulating substrate material 112 to form an Ag thin film 213AG that becomes the reflector 13, but unlike the plating method. No underlying film such as Cu is provided.

  The material of the lower insulating substrate material 121 which is the main component of the base substrate material 120 shown in part (b) of FIG. 7 is a glass epoxy resin, that is, an epoxy resin in which glass fibers are mixed. In addition, a white pigment may be mixed to improve the reflection efficiency from the bottom surface of the reflection substrate. A lead frame, which is another component of the base substrate material 120, includes a lead frame 22 as an electrode plate for an anode and a lead frame 23 as an electrode plate for a cathode as a pair. The metal plate is pressed into a substantially U shape, and the surface thereof is plated with one or two kinds of Cu, Ni, Ag, Au, Pd, Pt, Rh, Sn, or the like. The outermost surface is plated with Ag, Au, Pt, Rh, Ni or the like having a high light reflectance. This plating not only improves the light reflectivity, but also plays a role in preventing corrosion of metal materials and improving conductivity. Then, a plurality of pairs (six pairs in FIG. 7) of lead frames 22 and 23 are arranged in the mold, and the lead frames 22 and 23 are insert-molded by injecting plastic as the lower insulating substrate material 121. Thus, the base substrate material 120 is formed. At this time, the side surfaces, the lower surface, and the upper surface of the lead frames 22 and 23 are exposed to the outside of the lower insulating substrate material 121. Further, since a plurality of (six in FIG. 7) LED packages 30 are cut out from the base substrate material 120 in a subsequent process, an elongated hole 120H is formed in the lower insulating substrate material 121 in consideration of the convenience. . Also, the cathode electrode (not shown) terminal provided on the lower surface of the LED element 24 and the exposed surface of the lead frame 23 are joined and connected by a known method such as soldering, and the LED element 24 is connected to the upper surface of the LED element 24. A terminal of the anode electrode (not shown) provided and the exposed surface of the lead frame 22 are wire-bonded via a wire 25 and are electrically connected.

  The lower surface of the reflective substrate material 110 manufactured by the above-described method and the upper surface of the base substrate material 120 are disposed so that the LED elements 24 are accommodated in the reflective holes 11, and are bonded using a sheet adhesive or the like. After the joined body is formed, the LED element 24 at the bottom of the reflection hole 11 and the sealing material 14 shown in FIG. The sealing material 14 is made of a transparent epoxy resin, silicon resin, or the like, and is formed by a potting method or the like. The sealing material 14 not only protects the LED elements 24 and the like from damage, but also has an effect of dispersing the emitted light of the LED elements 24 and brightening the emitted light from the LED package 30. This is because the light emitted from the LED element 24 is refracted when it passes through the transparent resin and is refracted, and the refracted light is dispersed in the reflection hole 11 and reflected by the reflector 13 and further dispersed. This is to radiate outside. After filling the sealing material 14, the product of the LED package 30 as shown in FIG. 5 is completed if the joined body is divided using a dicing saw or the like along the cutting line 101 of FIG. The LED package 30 is used for an electronic component or the like while being electrically connected to the LED element 24 by bonding the lower surfaces of the lead frames 22 and 23 to a mother board or an FPC board.

  As described above, in the LED package 30 (the same applies to the optical sensor package), the reflector 13 is often provided in order to increase the light reflection efficiency. In most cases, the reflector 13 is composed of a metal thin film 113 having a high light reflectance formed by a plating method or a vapor deposition method, as described in the background art section. The metal thin film 113 is formed only on the upper surface (including the reflection hole surface) of the upper insulating substrate material 112 and not on the lower surface. The reason is that if the metal thin film 113 is provided up to the lower surface, insulation between the cathode lead frame 23 and the anode lead frame 22 provided on the base substrate material 120 cannot be obtained. However, when the metal thin film 113 is formed only on one surface of the upper insulating substrate material 112 in this way, a warp in which the upper surface side is convex occurs at the central portion of the reflective substrate material 110 due to a difference in thermal expansion coefficient between the upper surface and the lower surface. End up. FIG. 10 is a cross-sectional view taken along the line AA in FIG. 7 when warping occurs (an example of the plating method). If the reflection substrate material 110 is warped, the adhesion between the reflection substrate material 110 and the base substrate material 120 is deteriorated when the reflection substrate material 110 and the base substrate material 120 are bonded together, and the bonding operation becomes difficult. . In addition, the assembly accuracy of the LED package 30 also deteriorates, and as a result, the yield tends to deteriorate. In addition, due to excessive stress and strain, the adhesion is incomplete, resulting in inconvenience such as the sealing performance is broken and the LED package 30 is broken down.

  In the final step of product production, a product such as a dicing saw is used to cut the joined body of the reflective substrate material 110 and the base substrate material 120 along the cutting line 101 shown in FIG. In this case, the cutter must also cut the metal thin film 113 that constitutes the reflector 13 together with the upper and lower insulating substrate materials 112 and 121, resulting in a problem that the cutter life is shortened.

  As a means for solving the above problems, the invention according to claim 1 of the present invention is characterized in that the upper insulation has a plurality of reflection holes whose side surfaces are inclined so that the projected area decreases from the upper surface to the lower surface. A plurality of pairs of electrode plates each having a pair of anode and cathode are formed on the lower insulating substrate material and the lower surface of the reflective substrate material formed by coating the upper surface of the substrate material with a metal thin film for reflector. After forming the joined body by arranging and bonding the upper surface of the base substrate material on which the plurality of light emitting elements conducting with the electrode plate are mounted so that the light emitting elements are housed in the reflection holes, the joined body is cut out from the joined body. In the method of manufacturing an optical semiconductor package manufactured by the above method, the reflective substrate material is plated with a package surface area that forms part of the upper surface of the upper insulating substrate material and a wiring pattern portion that is electrically connected to the package surface area. In those characterized by using a reflective substrate material formed with a metal thin film for the formed reflector.

  According to the second aspect of the present invention, the upper surface of the upper insulating substrate material having a plurality of reflection holes whose side surfaces are inclined so that the projected area decreases from the upper surface to the lower surface is used for the reflector. A plurality of pairs of electrode plates each having a pair of anode and cathode electrodes on a lower surface of a reflective substrate material formed by coating with a metal thin film and a lower insulating substrate material; and a plurality of conductive plates electrically connected to the plurality of pairs of electrode plates A method for manufacturing an optical semiconductor package, wherein a bonded body is formed by arranging and bonding an upper surface of a base substrate material mounted with a light emitting element so that the light emitting element is stored in the reflection hole, and then cut out from the bonded body In this case, as the reflective substrate material, a reflective substrate material formed of a metal thin film for a reflector formed by vapor deposition on a package surface area forming a part of the upper surface of the upper insulating substrate material is used. In .

  According to a third aspect of the present invention, there is provided a step of coating the entire surface of the upper insulating substrate material with a base metal thin film using an electroless plating method, and coating the base metal thin film with a photoresist film. Then, the photoresist film is exposed through a mask film, and further developed to leave the photoresist film in the package surface area and the wiring pattern portion that communicates with the package surface area, and an underlying metal thin film Among them, a step of peeling a portion not covered with the photoresist film with a peeling solution, a step of peeling off the remaining photoresist film, and providing a metal thin film for reflector on the surface of the remaining base metal thin film by electrolytic plating The reflective substrate material is manufactured through the steps.

  According to a fourth aspect of the present invention, a reflective thin film is formed by forming a reflector metal thin film on the package surface area by a vapor deposition method using a mask that covers the upper insulating substrate material other than the package surface area. It is characterized by producing a plate material.

  According to a fifth aspect of the present invention, there is provided an optical semiconductor package manufactured by using the manufacturing method according to any one of the first to fourth aspects.

First, in the invention according to claim 1 of the present invention, when a reflector is formed by a plating method,
Since there is no warping of the reflective substrate material, the work efficiency of bonding when the reflective substrate material and the base substrate material are bonded is improved, and the assembly accuracy as an optical semiconductor package is also improved, resulting in product yield. It leads to improvement. Further, since the metal thin film is not cut when the product is cut out, the life of the cutter is extended, the productivity is increased, and the plating processing area is suppressed to the minimum necessary, which leads to a reduction in material costs.

Further, in the invention according to the second aspect of the present invention, when the reflector is formed by the vapor deposition method, the occurrence of warpage is eliminated, the assembly accuracy is improved, the working efficiency is increased, and the yield is improved.
Moreover, since the metal thin film is not cut when the product is cut out, the life of the cutter is extended and the productivity is increased. In addition, the vapor deposition area can be kept to a minimum, leading to a reduction in material costs.

  Moreover, in the invention concerning Claim 3 of this invention, the manufacturing process in the case of forming a reflector using the plating method was shown. Through this manufacturing process, even when a metal thin film is formed in an island shape, since the entire package surface area is electrically connected through the wiring pattern portion, the film can be formed at a high film formation rate.

  Moreover, in the invention concerning Claim 4 of this invention, the manufacturing method in the case of forming a reflector by a vapor deposition method was shown. Since this manufacturing method uses vapor deposition, a wiring pattern portion as in the case of plating is not necessary, and the film forming speed is faster than the plating method.

  The invention according to claim 5 of the present invention is an optical semiconductor package manufactured by the manufacturing method of claims 1 to 4 of the present invention, and provides an optical semiconductor package with high assembly accuracy, high productivity and low cost. Became possible.

  BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the best embodiment of the present invention (hereinafter simply referred to as “embodiment”) will be described with reference to FIGS. 1 is a perspective view of a reflective substrate material according to the first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line AA in each manufacturing process of the reflective substrate material of FIG. 1, and FIG. 3 is a second embodiment of the present invention. FIG. 4 is a cross-sectional view taken along line AA in the reflective substrate material vapor deposition step of FIG. 3. In addition, the same code | symbol is attached | subjected to the same component as the component demonstrated by background art, and the content already demonstrated by background technology was abbreviate | omitted or kept only simple description.

  First, the configuration and manufacturing method of the reflective substrate material according to the first embodiment of the present invention will be described with reference to FIGS. 1st Embodiment is a case where a reflector part is formed by the plating method. An external perspective view of the reflective substrate material produced by the method of the first embodiment of the present invention is as shown in FIG. 1, and a plurality of reflective holes 11 are formed in the plate-like upper insulating substrate material 312 (in FIG. 1). 6) and is a package surface area 11P (an area to be the upper surface of the LED package product, which is a part of the upper surface of the upper insulating substrate material 312; the inclined surface of the reflection hole 11 and the edge of the reflection hole 11) And a wiring pattern portion 305 (consisting of a vertical pattern 302, a horizontal pattern 303, and an outer peripheral pattern 304) connected to the package surface area 11P is formed with a metal thin film 313, all of which are electrically conductive. Yes. The AA cross-sectional shape of the reflective substrate material 310 shown in FIG. 1 is as shown in FIG. 2F, and the processing steps up to this point will be described below with reference to FIG.

Step (a): The upper insulating substrate material 312 which is the main structural material of the reflective substrate material 310 has a plurality of reflective holes 11 of a rectangular thick plate whose diameter gradually decreases from the upper surface side to the lower surface side. The plurality of reflection holes 11 are aligned in the vertical and horizontal directions when viewed in plan. The upper insulating substrate material 312 having such a shape is injected by using a mold from a raw material obtained by mixing a white pigment or the like with a resin material (liquid crystal polymer, polyphthalamide resin, ABS resin) capable of electroless plating. Produced by molding. The reflection hole 11 formed by injection molding is also transferred from the mold, but the inclined surface has a mirror finish.
Step (b): In this step, the upper insulating substrate material 312 is subjected to electroless plating as the base of the reflector. Electroless plating is a method of forming a plating thin film on the surface by immersing in a plating solution without taking electrodes. In this step, a Cu thin film 313CU (underlying metal thin film) is formed on the entire surface of the upper insulating substrate material using this electroless plating method.
Step (c): After applying a photoresist 315 on the Cu thin film 313CU, the photoresist 315 is exposed by irradiating with ultraviolet rays 316 through the mask film 306 while covering the upper surface with the mask film 306. Furthermore, the unexposed photoresist 315 is removed by development after exposure (in the case of a positive resist). Finally, the photoresist 315 is left only in the package surface area 11P and the wiring pattern portion 305 of FIG.
Step (d): As a result of the treatment in step (c), the Cu thin film 313CU in the portion where the photoresist coating is lost (that is, the portion where the underlying metal thin film is exposed) is immersed in a stripping solution and stripped.
Step (e); Thereafter, the exposed photoresist 315 is removed. As a result, the Cu thin film 313CU formed in the package surface area 11P and the wiring pattern portion 305 in FIG. 1 appears on the surface of the upper insulating substrate material 312.
Step (f): First, an Ni thin film 313NI and then an Ag thin film 313AG are formed on the surface of the Cu thin film 313CU by using an electrolytic plating method.

  The reflective substrate material 310 manufactured through the above steps has its lower surface substantially pressed by pressing a metal plate on the surface of the base substrate material 120 (that is, the lower insulating substrate material 121) having the same configuration as shown in the conventional example. A plurality of a pair of lead frames 22 and 23 for the anode electrode and the cathode electrode manufactured by plating are formed on the surface, and through the pair of lead frames 22 and 23 After forming a bonded body in which the LED element 24 on the base substrate material 120 and the LED element 24 on the base substrate material 120 are disposed in the reflection hole 11 of the reflective substrate material 310, and the upper surface of the LED element 24 on which the plurality of conductive LED elements 24 are mounted) By cutting the joined body along the cutting line 301 shown in FIG. 1, the LED package 30 as shown in FIG. 5 is manufactured as a conventional example.

  In the first embodiment, the steps after step (c) in FIG. 2 are particularly characteristic steps. Through this process, the metal thin film 313 for the reflector laminated with the Ni thin film 313NI and the Ag thin film 313AG on the Cu thin film 313CU is not plated over the entire upper surface of the upper insulating substrate material 312 as in the prior art. When the reflector is formed, it is formed only at the minimum necessary place. (The wiring pattern portion 305 serves as an energization path when an island-shaped metal thin film is formed on the package surface region 11P by electrolytic plating.) As a result, the problem of warping of the reflective substrate material 310 is avoided, and the reflective substrate material 310 When the base substrate material 120 and the base substrate material 120 are bonded together, the working efficiency of the bonding is improved, and the assembly accuracy as the LED package 30 is also improved. As a result, the product yield is improved. Further, when the product is cut out, the metal thin film 313 is not cut, so that the cutter life is extended, the productivity is increased, and the plating processing area is suppressed to the minimum necessary, so that the material cost can be reduced.

  Next, the manufacturing method of the reflective substrate material concerning 2nd Embodiment of this invention is demonstrated using FIG. 3, FIG. The second embodiment is a manufacturing method for solving the “problem to be solved by the invention” when manufacturing a reflector using the vapor deposition method, and FIG. 3 is completed by using the method of the second embodiment of the present invention. 4 is a perspective view of the reflecting substrate material, and FIG. 4 shows a part of the manufacturing process for forming the reflector, using the AA sectional view of the reflecting substrate material of FIG.

  The reflective substrate material 410 manufactured by the vapor deposition method of the second embodiment and shown in FIG. 3 has a reflector portion formed of a metal thin film 413 around the reflective hole 11 on the upper surface of the upper insulating substrate material 412, and this reflector portion. Is formed only in the package surface area 11P of the upper surface of the upper insulating substrate material 412. A method of manufacturing the reflective substrate material 410 (not formed on the cutting line 401) will be described with reference to FIG. Similar to the first embodiment, the upper insulating substrate material 412 serving as the main structural material of the reflective substrate material 410 is a rectangular thick plate provided with a plurality of reflective holes 11 aligned. In addition, a mixture of a resin material such as liquid crystal polymer that can be electrolessly plated with a white pigment or the like is used as a raw material, and injection molding is performed using a mold. The reflection hole 11 is also transferred from the mold, and its inclined surface is a mirror surface. Finished. In the second embodiment, a mask 406 provided with a hole in a pattern shape to be deposited is interposed between the vapor deposition apparatus (not shown) and the upper insulating substrate material 412 and heated by the vapor deposition apparatus. A metal thin film (Ag thin film 413AG) is formed by laminating the evaporated metal (Ag) that has evaporated and passed through the mask hole 406A on the upper surface of the upper insulating substrate material. The film thickness is about 1000-1500 angstroms. In addition, when forming a reflector part by a vapor deposition method, unlike a plating method, a base metal thin film, such as Cu, is not provided.

  The reflective substrate material 410 manufactured by the above vapor deposition method has a lower surface on the upper surface of the base substrate material 120 having the same configuration as that described in Embodiment 1, and the LED elements 24 on the base substrate material 120 are formed on the reflective substrate material 410. After the bonded assembly is formed so as to be disposed in the reflection hole 11, the bonded package is cut along the cutting line 401 shown in FIG. 3, so that the LED package 30 as shown in FIG. Produced.

  By using the method shown in the second embodiment, the same effect as that of the first embodiment can be obtained even when the reflector portion is formed by the vapor deposition method. That is, the occurrence of warping of the reflective substrate material 410 is eliminated, so that the working efficiency of the bonding is improved and the assembly accuracy of the LED package is improved. In addition, since the metal thin film 413 is not cut, the life of the cutter is extended, the productivity is increased, and the vapor deposition processing area can be suppressed to a necessary minimum, so that there is an advantage that the material cost can be reduced.

  In addition, since the optical semiconductor package manufactured using the method of the first and second embodiments does not contain excessive stress or distortion, the package has high sealing durability, and the failure rate is reduced accordingly. effective.

  In the first embodiment, the reflector portion is provided with the Ni thin film 313NI on the Cu thin film 313CU, and the Ag thin film 313AG having a high light reflectance is used on the outermost surface, but Al, Au, and Pt are used instead of Ag. Alternatively, the Ni thin film 313NI formed on the Cu thin film 313CU may be brought to the outermost surface. In addition, the Ag thin film 313AG provides high reflectance, but has a defect that it is easily oxidized. Therefore, in both Embodiments 1 and 2, it is preferable to apply an antioxidant film to the Ag surface when Ag is exposed on the outermost surface.

  In the first embodiment (and the second embodiment), as an electrode plate to be connected to the LED element 24, a lead frame 22 produced by pressing a metal plate into a substantially U-shape and plating the surface thereof. However, instead of the metal plate, it may be formed thicker on the lower insulating substrate material 121 by using a vapor deposition method, a sputtering method, an ion plating method, or the like. In the drawings used for the description so far, the reflection holes 11 are all round holes, but the shape is not limited thereto.

It is a perspective view of the reflective board | substrate material concerning 1st Embodiment of this invention. FIG. 2A is a cross-sectional view of an injection-molded upper insulating substrate material, and FIG. 2B is a view when a Cu thin film is formed on the surface of the upper insulating substrate material. FIG. 2C is a cross-sectional view of FIG. 2C, where a photoresist is coated on a Cu thin film, irradiated with ultraviolet rays through a mask film, unexposed photoresist is removed after exposure / development of the photoresist, and package surface area FIG. 2D is a cross-sectional view when the photoresist is left only in the wiring pattern portion, FIG. 2D is a cross-sectional view when the portion of the Cu thin film where the photoresist coating has been removed is peeled, and FIG. FIG. 2F is a cross-sectional view when the Ni thin film and the Ag thin film are formed on the surface of the Cu thin film. It is a perspective view of the reflective substrate material concerning 2nd Embodiment of this invention. It is sectional drawing in the vapor deposition process of the reflective substrate material of FIG. It is a perspective view of the conventional LED package. It is principal part sectional drawing of the LED package in FIG. It is a perspective view of the conventional reflective substrate material and base substrate material. FIG. 8A is a cross-sectional view of an injection-molded upper insulating substrate material, and FIG. 8B is a surface view of the upper insulating substrate material. FIG. 8 (c) is a cross-sectional view when a Cu thin film is formed, and a photoresist is applied on the Cu thin film, irradiated with ultraviolet rays from the upper surface, the photoresist is exposed and developed, and the unexposed photoresist is removed. FIG. 8D is a cross-sectional view when the photoresist is left only on the upper surface side of the upper insulating substrate material, FIG. 8D is a cross-sectional view when the Cu thin film in a portion without the photoresist coating is peeled, and FIG. FIG. 8F is a cross-sectional view when the Ni thin film and the Ag thin film are formed on the surface of the Cu thin film. FIG. It is sectional drawing when forming the metal thin film for reflectors on the upper insulation board | substrate material by the conventional vapor deposition method. It is sectional drawing of a reflective substrate material when the deformation | transformation of the reflective substrate material manufactured by the conventional method generate | occur | produced.

Explanation of symbols

10 reflective substrate 11 reflective hole 11P package surface area
12 Upper insulating substrate 13 Reflector 20 Base substrate 21 Lower insulating substrate 22, 23 Lead frame 24 LED element
30 LED package 120 Base substrate material 121 Lower insulating substrate material 305 Wiring pattern portion 306 Mask film 310, 410 Reflecting substrate material 312, 412 Upper insulating substrate material 313, 413 Metal thin film 313CU Cu thin film 313NI Ni thin film 313AG, 413AG Ag thin film 315 Photo Resist film 406 Mask

Claims (5)

The lower surface of the reflective substrate material formed by coating the upper surface of the upper insulating substrate material having a plurality of reflective holes whose side surfaces are inclined so that the projected area decreases from the upper surface to the lower surface with a metal thin film for reflectors; A plurality of pairs of anode and cathode electrode plates on the lower insulating substrate material, and an upper surface of a base substrate material on which a plurality of light-emitting elements that conduct with the plurality of pairs of electrode plates are mounted, In the manufacturing method of the optical semiconductor package manufactured by cutting out from the bonded body after forming the bonded body by arranging and bonding so that the light emitting element is stored in the reflection hole,
Reflection formed with a metal thin film for a reflector formed by plating a package surface area that forms part of the upper surface of the upper insulating substrate material and a wiring pattern portion that is electrically connected to the package surface area as the reflective substrate material A method of manufacturing an optical semiconductor package, comprising using a substrate material. The lower surface of the reflective substrate material formed by coating the upper surface of the upper insulating substrate material having a plurality of reflective holes whose side surfaces are inclined so that the projected area decreases from the upper surface to the lower surface with a metal thin film for reflectors; A plurality of pairs of anode and cathode electrode plates on the lower insulating substrate material, and an upper surface of a base substrate material on which a plurality of light-emitting elements that conduct with the plurality of pairs of electrode plates are mounted, In a method for manufacturing an optical semiconductor package, in which a light emitting element is disposed and bonded so as to be stored in the reflection hole to form a joined body, and then cut out from the joined body.
An optical semiconductor package using a reflective substrate material formed by a metal thin film for a reflector formed by vapor deposition in a package surface area forming a part of the upper surface of the upper insulating substrate material as the reflective substrate material Manufacturing method. A step of coating the entire surface of the upper insulating substrate material with a base metal thin film using an electroless plating method, and coating the base metal thin film with a photoresist film, and then exposing the photoresist film through a mask film And further developing to leave a photoresist film on the package surface area and the wiring pattern portion that communicates with the package surface area, and peeling the portion of the underlying metal thin film that is not covered with the photoresist film The reflective substrate material is manufactured through a step of peeling with a liquid, a step of peeling off the remaining photoresist film, and a step of providing a metal thin film for reflector on the surface of the remaining base metal thin film by electrolytic plating. The method of manufacturing an optical semiconductor package according to claim 1. The reflective substrate material is manufactured by forming a metal thin film for a reflector on the package surface region by a vapor deposition method using a mask that covers a region other than the package surface region of the upper insulating substrate material. Optical semiconductor package manufacturing method. An optical semiconductor package manufactured by using the manufacturing method according to claim 1.

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