JP2000223752A - Optical semiconductor device and its forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device of high reliability which can be especially miniaturized, regarding an optical semiconductor device for surface mount which is used as an SMD(surface mount device) or the like, and a forming method of the device. SOLUTION: This optical semiconductor device is provided with a thin plate 111 which is arranged on one surface side of an insulating flat plate 101 in which a penetrating hole is formed, and is thinner than the insulating flat plate 101; an optical semiconductor element 103 which is die-bonded on the thin plate on a bottom surface of a cavity 102 using the penetrating hole, by using die bonding material having at least resin; lead electrodes 105, 106 electrically connecting the optical semiconductor element 103 arranged on the insulating flat plate 101 with an external part; and light transmitting resin with which the optical semiconductor element 103 in the cavity 102 is covered. Especially, the surface of the thin plate 111 is formed of at least, resin or porous material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an SMD (Surface Mount Device) such as an illumination in a switch, various light sources of a dot matrix display, and an optical sensor.
The present invention relates to an optical semiconductor device for surface mounting used as e) and the like, and particularly to an optical semiconductor device which can be miniaturized and has high reliability and a method for forming the same.

[0002]

2. Description of the Related Art Today, light-emitting elements and light-receiving elements are variously used as various light sources and sensors for illumination in switches, dot matrix displays, and the like. As the field of application expands, S becomes smaller and can be directly mounted on a circuit board.
An optical semiconductor device for surface mounting, which is used as an MD (Surface Mount Device) or the like, is being developed. The optical semiconductor device can be formed extremely small, and the handling efficiency can be improved by a package or the like for protecting the optical semiconductor element disposed inside.

As such an optical semiconductor device, Japanese Patent Application Laid-Open No. Hei 8-
No. 125227 and the like. FIG. 6 shows a chip component type light emitting diode for comparison with the present invention as a specific example of an optical semiconductor device. The surface-mounted light emitting diode 600 shown in FIG. 6 has a resin substrate 601 having a through hole 602.
A package provided with a thin metal plate 604 is used.
A pair of wiring patterns 605 and 606 are formed from the front surface to the side surface and the back surface of the package. One of the wiring patterns 606 is a thin metal plate extending along the side wall in the through hole. Ag paste 607 on thin metal plate
To fix the LED chip and the LED chip 6
03 is electrically connected to one electrode. The other wiring pattern 605 is connected to the other electrode of the LED chip 603 and the thin metal wire 6 on the outer upper surface of the through hole provided in the package.
08 is used for conduction. By providing a transparent resin 609 on the LED chip, a surface-mounted light emitting diode 600 is formed.

[0004] Since the LED chip 603 is arranged in the concave portion using the through-hole 602 and the metal thin plate 604 in the surface-mounted light emitting diode thus formed, the overall thickness can be extremely reduced. Therefore, a surface-mounted light-emitting diode that can be miniaturized with high productivity can be formed.

[0005]

However, as the device is used in a more severe environment required with the expansion of the use environment, it is difficult to obtain sufficient reliability in the surface mount type light emitting diode and the like having the above structure, and further improvement is required. Was required. The present invention has been made in view of the above problems, and has as its object to provide an optical semiconductor device that is highly reliable and can be made thin.

[0006]

SUMMARY OF THE INVENTION The present invention provides a thin plate provided on one surface side of an insulating flat plate having a through hole formed therein, the thin plate being thinner than the insulating flat plate, and a thin plate on the bottom surface of the cavity utilizing the through hole. An optical semiconductor element die-bonded by a die-bonding member having at least a resin, a lead electrode for electrically connecting an optical semiconductor element provided on an insulating flat plate to the outside, and a light-transmitting optical element covering the optical semiconductor element in the cavity. An optical semiconductor device having a conductive resin. In particular, an optical semiconductor device in which the surface of a thin plate is at least a resin or a porous material. As a result, the optical semiconductor device can be reduced in size with good mass productivity, and the reliability can be significantly improved.

In the optical semiconductor device according to a second aspect of the present invention, the thin film is a metal having a resin on the surface or a metal having a ceramic on the surface. Thereby, not only the heat radiation from the optical semiconductor element can be improved, but also the mechanical strength can be improved. Further, the light use efficiency can be improved.

In the optical semiconductor device according to a third aspect of the present invention, the metal constituting the thin plate is sealed with a resin and is electrically independent from the lead electrodes. When the insulating flat plate and the thin film are attached to each other with an adhesive such as an adhesive sheet, solder or the like may enter from the interface of the adhesive sheet when mounting the solder or the like in the optical semiconductor device. Similarly, moisture may enter. The present invention prevents such infiltration of moisture and solder, and is electrically independent from the lead electrodes even if a conductive member is used for the thin plate. Therefore, a short circuit occurs between the lead electrodes via the thin plate. Can be greatly reduced. In addition, the resin on the thin plate has an effect of improving the wettability in addition to enhancing the insulating property and preventing a short circuit between the electrodes when the optical semiconductor device is soldered or the like.

According to a fourth aspect of the present invention, there is provided a method for forming an optical semiconductor device, comprising the steps of: forming a through hole in an insulating flat plate; and attaching the insulating flat plate and a metal via an adhesive sheet. A step of forming at least a pair of lead electrodes on an insulating flat plate; a step of die-bonding the optical semiconductor element to a bonding sheet on the bottom surface of the cavity using a through hole by a die bonding member having at least a resin; And electrically connecting the lead electrodes formed on the insulating flat plate with a conductive material, and covering at least the optical semiconductor element with a translucent resin.
This makes it possible to form a highly reliable optical semiconductor device that can be reduced in size by a relatively simple process with high productivity.

According to a fifth aspect of the present invention, there is provided a method for forming an optical semiconductor device, comprising the steps of: forming a through hole in an insulating flat plate having an adhesive sheet; Providing a metal layer having ceramic on the surface facing the substrate, forming at least one pair of lead electrodes on the insulating flat plate, and forming at least an optical semiconductor element on the ceramic on the bottom surface of the cavity using a through-hole. Die bonding with a die bonding member having: a step of electrically connecting each electrode of the optical semiconductor element with a lead electrode formed on an insulating flat plate using a conductive material; Coating with a resin. Thus, similarly to the above, an optical semiconductor device which can be reduced in size and has high reliability can be formed with a relatively simple process with high mass productivity.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventors
The inventor has found that by adding a thin plate having a specific surface to an insulating flat plate having a through hole, miniaturization and reliability can be improved, and the present invention has been accomplished.

Although the effect of improving reliability by the structure of the present invention is not clear, it is considered that the surface shape of a thin plate attached to an insulating flat plate having a through-hole greatly affects the reliability. That is,
By using an insulating flat plate and a thin plate having a through-hole, miniaturization can be achieved with good mass productivity. In particular, when the thin plate constituting the bottom surface of the concave portion of the cavity is made thinner than an insulating flat plate, heat from the optical semiconductor element is easily released to the outside, and characteristics such as driving stability and reliability can be improved. On the other hand, the influence that various kinds of heat from the solder connection of the optical semiconductor device, the external environment, and the like are directly and repeatedly applied to the optical semiconductor element and the inside of the through hole via the thin plate increases.

Such heat separates the optical semiconductor element from the thin plate or the like due to a difference in the coefficient of thermal expansion between the translucent resin covering the optical semiconductor element and the side wall or the thin plate of the through hole, or the expansion of water mixed during the formation. It is thought that. In particular, when a metal thin plate is used, not only the adhesion to the resin covering the optical semiconductor element is relatively low, but also the thermal conductivity is high and the coefficient of thermal expansion with the resin is significantly different, so that the peeling tendency is extremely strong. it is conceivable that. The separation between the optical semiconductor element and the thin plate not only changes the optical characteristics, but also causes breakage of a thin metal wire as a conductive member near the electrode. In some cases, there is a disadvantage that the optical semiconductor element cannot be electrically connected to the outside.

According to the present invention, as shown in the perspective view of FIG. 1, a thin plate 111 provided on one surface side of an insulating flat plate 101 having a through hole formed therein and thinner than the insulating flat plate, and a cavity utilizing the through hole. Optical semiconductor device 10 die-bonded by a die-bonding member having at least resin on a thin plate on the bottom surface
3, a lead electrode 105 provided on an insulating flat plate for electrically connecting the optical semiconductor element 103 to the outside, and a light-transmitting resin 109 covering the optical semiconductor element in the cavity. . In particular, the surface of the thin plate 111 constituting the bottom surface of the cavity is made of at least the resin 112. As a result, while maintaining miniaturization and mass productivity,
The reliability can be further improved by using a thin plate having improved adhesiveness with a translucent resin for covering the optical semiconductor element and a die bonding member for mounting the optical semiconductor element. Hereinafter, embodiments of the present invention will be described in detail, but it is needless to say that the present invention is not limited thereto.

[0015]

(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings. 2 and 3 show one embodiment of the present invention, and the manufacturing process will be described with reference to FIG.
A glass epoxy on which a copper foil forming a part of a lead electrode is suitably formed in advance is used as the insulating flat plate 101 (step in FIG. 3A).

In the insulating flat plate 101, a through hole forming a cavity in which an LED chip 103 as an optical semiconductor element is to be formed is formed later. The insulating flat plate 101 is an LED
It is preferable that the optical semiconductor element 103 such as a chip can be protected from the outside and can be made thinner. Specifically, various types such as glass epoxy, liquid crystal polymer, acrylic resin, epoxy resin and ceramic can be used.
The through hole provided in the insulating flat plate 101 may have a size such that an optical semiconductor element is disposed therein. When an RGB (red, green, blue) LED chip is disposed as the optical semiconductor element, YB (yellow) is used. , Blue), or a light emitting element and a light receiving element are arranged together, and when a plurality of light emitting elements and light receiving elements are used together, the size may be set so that each can be arranged. Therefore, a plurality of through holes formed in the insulating flat plate can be provided at various positions on the insulating flat plate according to the size, shape, and number of the optical semiconductor elements.

Similarly, the thickness of the insulating flat plate 101 is determined by using the through hole to determine the depth of the cavity, so that various thicknesses can be used as desired. In particular, when a light emitting device having a nitride semiconductor active layer having a double heterostructure is used as an optical semiconductor device, a very large amount of light is emitted from the end face direction of the active layer. It is preferable to use a highly reflective material. Thus, an optical semiconductor device having high light use efficiency can be obtained only by forming through holes. More specifically, light is effectively used by exposing the white material surface of the insulating resin flat plate without forming Au plating or the like that absorbs a large amount of light on the short wavelength side of visible light on the side wall of the cavity. be able to.

The through-hole forming the cavity can be formed relatively easily and with good controllability by the through-hole even if the insulating flat plate is thin, so that it can be formed extremely shallow. Specifically, the thickness can be about 200 μm or less. Such a through-hole can be formed by etching an insulating flat plate, or can be formed mechanically using a drill. Further, the through holes can be formed by using various lasers such as a gas laser using carbon dioxide gas and a solid laser using YAG. The shape of the through-hole can also be adjusted to a desired shape such as a mortar or column by adjusting the selection of the etching solution, the shape of the cutting edge of the drill, and the concentration of the laser beam. Similarly, the shape of the through hole as viewed from the front is not limited to a circle, and various shapes such as an ellipse, a square, a rectangle, a rectangle without an edge, and a shape in which a plurality of circles are continuously penetrated can be selected as desired. can do.

Next, a metal layer 111 is adhered to an insulating flat plate having a through hole formed substantially at the center thereof via an adhesive sheet 112 made of epoxy resin having a thickness of about 60 μm as a thin plate to form a cavity 102 using the through hole. I do. Thin plate 1
By making 11 thinner than the insulating flat plate 101, it is possible to reduce the overall thickness of the optical semiconductor device 100 and to improve the heat dissipation. The thickness of the insulating flat plate 101 is likely to be limited in order to protect the optical semiconductor element 103 or to improve the light use efficiency.
No. 11 is only required to be able to support the optical semiconductor element 103.

As the thin plate 111, a thin plate having a thickness of about 30 to 170 μm can be suitably used. The thin plate 111 of the present invention fixes an optical semiconductor element via a die bond resin. Alternatively, the surface may be in contact with the mold member 109 which is a translucent resin, and has a surface with excellent adhesion to the die bond resin 107, the resin mold member 109, and the like.
As a specific surface of the thin plate, a resin surface 112 having excellent adhesiveness capable of being chemically or mechanically bonded to a die bond resin or the like, a ceramic having a porous surface, or the like can be used. In the case of a thin plate using an extremely thin adhesive resin sheet or the like, it is difficult to obtain mechanical strength, and therefore, a metal, ceramic, or the like can be additionally provided as a reinforcing member. When a metal is used for reinforcement, it is preferable to use a resin such as a resist ink to perform insulating coating to prevent a short circuit with each electrode of the optical semiconductor device.

If the adhesive sheet 112 is made of a white material having a high reflectance and the optical semiconductor element 103 is made of a nitride semiconductor light emitting element, the light utilization efficiency can be further improved. Similarly, at least a light emitting layer is a double-heterostructure nitride semiconductor on an insulating substrate in a cavity 102 which is a resin insulating flat plate 101 and has a white material surface serving as a side wall, and a pair of electrodes on the same surface side. The light use efficiency can be further increased by disposing the optical semiconductor element 103 that has the light semiconductor element 103. Further, by setting the composition or the solvent of the adhesive sheet 112 to be the same as or close to the composition of the die bond resin 107 for bonding the optical semiconductor element 103, stronger bonding strength can be obtained.

Next, the copper plate serving as the thin plate 111 was etched leaving a portion where the bottom surface of the cavity was fixed to the insulating flat plate (step B in FIG. 3).

Preferably, the copper plate, which is the thin plate 111 exposed to increase the adhesion strength of the copper plate and ensure insulation, is sealed with a resin 113. Subsequently, external lead electrodes 105 and 106 of the optical semiconductor device are formed. The outer lead electrodes 105 and 106 are compared with extremely thin lead electrodes by forming plating layers on the light emitting or incident side upper surface, the lower surface and the side opposite to the upper surface of the insulating flat plate 101 using electrolytic and electroless plating methods. It can be easily formed. Furthermore, the plating layers on the upper surface and the lower surface on the light emitting side of the insulating flat plate can be reinforced by using a photographic method.
Thus, the cavity 102 in which the optical semiconductor element is arranged
In addition, a package on which the lead electrodes 105 and 106 are formed can be formed (FIG. 3C step).

The metal plate, which is a thin reinforcing member constituting the cavity, and the lead electrodes 105 and 106 are electrically independent. In addition, the resin 113 seals the end and enhances insulation. Here, it is disclosed that the thin plate is sealed with a resin after the lead electrode is formed, but it is needless to say that the thin plate can be sealed with a resin after the thin plate is sealed.

Subsequently, an LED chip 103 having a gallium nitride-based compound semiconductor at least as a light-emitting layer is formed on the adhesive sheet 112 on the bottom surface of the cavity 102 formed by using the through hole by using a translucent epoxy adhesive as a die bond resin 107. Die bonding is performed using a die bonding device. The LED chip 103 arranged in the cavity 102 and the lead electrodes 105, 1 on the light emitting side upper surface formed in the package.
06 using Au having a diameter of about 30 μm (FIG. 3D step).

The connection between the LED chip 103 and the lead electrodes 105 and 106 formed on the package is made electrically using a conductive wire 108 of 20 to 40 μm in consideration of miniaturization, connection strength and mass productivity. Conduction can be taken. The material of the conductive wire can be appropriately selected according to various characteristics such as gold and aluminum.

Similarly, an insulating protective film made of silicon oxide or the like is used only for maintaining conduction between the optical semiconductor element and the lead electrode so that the electrodes of the optical semiconductor element are not short-circuited unless the adhesion to the thin film is impaired. After covering the semiconductor element portion except for the electrodes, a conductive resin or solder containing a conductive filler such as silver, carbon, and ITO can be used as a die-bonding member and a conductive member (not shown). . In addition, a metal such as gold, silver, or copper, a metal oxide such as ITO or tin oxide, or a carbon having excellent conductive properties can be mixed as a die bond resin as required. In order to improve the properties, an inorganic substance such as glass can be mixed. Thus, the present invention can be applied to an optical semiconductor device having a pair of electrodes via a semiconductor layer.

In the present invention, the optical semiconductor element 103 is
A light emitting element and a light receiving element using various semiconductors can be used. As a specific light emitting element, a sapphire, spinel, SiC or GaN substrate on which a nitride semiconductor is laminated can be suitably used. A nitride semiconductor can emit various electromagnetic waves from an ultraviolet region to a visible region due to its band gap. In particular, when a nitride semiconductor is formed over a sapphire substrate, a light-emitting element having both crystallinity and mass productivity can be obtained. In addition, an LED chip having a gallium nitride-based compound semiconductor on a sapphire substrate and having a pair of electrodes formed on the same plane side has a high hardness of both the sapphire substrate and gallium nitride. Can be More specifically, the total height is 70 to 90 μ
When the m LED chips are used, the height of the optical semiconductor device can be reduced to about 0.3 mm or less.

Since the optical semiconductor element 103 has a pair of electrodes formed on an insulating substrate, the optical semiconductor element 103 can be reduced in size and improved in light use efficiency, and the effect of the present invention is particularly large.
As another semiconductor element, a light emitting element having a light emitting layer of indium, aluminum, gallium, phosphorus on a gallium phosphide or gallium arsenide substrate can be used.
Similarly, a light receiving element having a light receiving layer made of silicon heavily doped with impurities on a silicon substrate can be used.

Finally, the LED chip 103 is arranged in the cavity 102, and the surface of the package in which each electrode of the LED chip and the lead electrodes 105 and 106 of the package are connected by the gold wire 108 is partially transparent as a mold member 109. It is sealed by injection molding with a light epoxy resin (FIG. 3E step).

The mold member is suitably provided for protecting the LED chip, the conductive wire, and the like from the external environment and external force, and various types of materials such as epoxy resin, silicone resin, urea resin, and low melting point glass are used. be able to. The mold member may have a convex lens shape or a concave lens shape in order to collect or diffuse light incident on the optical semiconductor element or light emitted from the optical semiconductor element. Also, the convex lens can be variously selected, such as a simple convex lens or an elliptical lens shape, according to a desired directional characteristic. The mold member may contain various coloring agents for the purpose of cutting unnecessary wavelengths, and a diffusing material such as titanium oxide or silicon oxide for the purpose of obtaining diffused light.

In addition, yttrium aluminum activated by a perylene derivative or cerium for converting at least a part of the electromagnetic wave emitted from the light emitting element to another wavelength.
An optical semiconductor device capable of emitting white light can be obtained by containing a phosphor such as a garnet-based oxide. In this way, an extremely small optical semiconductor device having a rectangular shape of about 1.2 mm and about 1.8 mm on each side and a thickness of about 0.3 mm can be formed relatively easily.

Embodiment 2 Next, an optical semiconductor device having the structure shown in FIG. 4 will be described in detail. A thin plate 411 is additionally provided using the same insulating flat plate 401 as in the first embodiment, and the lead electrode 40 is provided.
5, 406 was plated to form a package. Unlike Example 1, an adhesive sheet made of an epoxy resin was adhered to an insulating flat plate to form an adhesive layer (Step A in FIG. 5), and then a through hole was formed together with the adhesive layer.

On the surface of the insulating flat plate 401 having the through-holes forming the cavity 402 on which the adhesive layer 412 is formed, a thin film 411 obtained by previously depositing a ceramic 414 on a copper foil is used as the bottom surface of the cavity. It was attached (FIG. 5B step). After attaching the thin plate, the copper foil is etched leaving the bottom of the cavity, and the lead electrode 405,
It is sealed with an insulating resin 413 so as to be electrically independent from 406 (FIG. 5C step). It should be noted that a thin film to which an adhesive sheet obtained by cutting out a portion serving as the bottom surface of the cavity is attached can be attached to the insulating flat plate.

As a thin plate, specifically, C having a thickness of about 35 μm
A ceramic composite metal layer 20 having a total thickness of about 50 μm and a white surface and having a porous surface is formed by depositing a ceramic on the u layer. Except for this, the optical semiconductor element 403 was mounted as a mount member 407 by die bonding with an epoxy resin and electrically connected in the same manner as in Example 1 (step D in FIG. 5). The mold member 409 was formed thereon, and the optical semiconductor device 400 was formed (Step E in FIG. 5). Although the optical semiconductor device formed in the second embodiment has better heat dissipation than the first embodiment,
It is also susceptible to external heat. However, the thermal shock test of the formed optical semiconductor device was almost equal to that of Example 1.

In a specific embodiment of the present invention,
Although each of the optical semiconductor devices is described, a plurality of through holes are formed in an insulating flat plate in a dot matrix shape in order to form the semiconductor device with high productivity. After the insulating flat plate and the metal are attached to the entire insulating flat plate via an adhesive sheet so as to correspond to the individual through holes, the optical semiconductor device is formed through the above-described steps. By individually separating the formed optical semiconductor devices, a plurality of optical semiconductor devices can be mass-produced. In addition, a dot matrix optical semiconductor device can be formed if the semiconductor devices are not individually separated.

Comparative Example 1 An optical semiconductor device was formed in the same manner as in Example 1 except that a thin plate was made of a copper plate having a thickness of about 50 μm and an LED was directly die-bonded on the copper plate with an epoxy resin. Using 1400 optical semiconductor devices of Example 1 and Comparative Example 1 thus formed, each was -20 ° C. for 30 minutes, and 8
A thermal shock test was performed under the conditions of 500 cycles at 0 ° C. for 30 minutes. After the test, the non-lighted light emitting diode of Example 1 was less than 30% of the light emitting diode of Comparative Example 1. When the light emitting diode of Comparative Example 1 which was not lit was examined, the thin copper plate and the die bond member were peeled off and the wire was broken.

[0038]

According to the present invention, the optical semiconductor device can be miniaturized and the reliability can be remarkably improved by setting the surface state of the thin plate of the optical semiconductor device which can be miniaturized to a specific surface. Further, the method of the present invention can form the above-described optical semiconductor device with good mass productivity.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of an optical semiconductor device of the present invention.

FIG. 2 is a schematic sectional view of the optical semiconductor device of the present invention.

FIG. 3 is a process chart for describing a method of forming the optical semiconductor device shown in FIG.

FIG. 4 is a schematic sectional view of another optical semiconductor device of the present invention.

FIG. 5 is a process chart for describing a method of forming the optical semiconductor device shown in FIG.

FIG. 6 is a schematic sectional view of an optical semiconductor device shown for comparison with the present invention.

[Explanation of symbols]

Reference Signs List 100 optical semiconductor device 101 insulating plate 102 cavity 103 optical semiconductor element 105, 106 lead electrode 107 mounting member 108 wire 109 molding member 111: Thin plate 112: Adhesive sheet 113: Resin that covers at least the end of the thin plate 400: Optical semiconductor device 401: Insulating flat plate 402: Cavity 403: Optical semiconductor element 405; 406: Lead electrode 407: Mount member 409: Mold member 411: Thin plate 412: Adhesive layer 413: Insulating resin 414: Surface of the thin plate on which the optical semiconductor element is arranged Ceramic 601... Resin substrate 602... Through-hole 603... LED chip 604. 6 ... a wiring pattern lead electrodes 607 ... Ag paste 608 ... wire become fine metal wires 609 ... sealing member to become transparent resin

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F041 AA43 AA47 CA04 CA40 DA20 DA44 DA74 DA78 DA81 5F088 AA01 BA10 BA11 BA15 JA03 JA06 JA10 LA03

Claims (5)

[Claims] 1. A die bonding member provided on one surface side of an insulating flat plate having a through hole formed therein, the thin plate being thinner than the insulating flat plate, and a resin having at least resin on the thin plate at the bottom of the cavity using the through hole. An optical semiconductor element die-bonded by the method, a lead electrode for electrically connecting the optical semiconductor element provided on the insulating flat plate to the outside, and a light-transmitting resin for covering the optical semiconductor element in the cavity. An optical semiconductor device, wherein the surface of a thin plate forming the bottom surface of the cavity is at least a resin or a porous material. 2. The optical semiconductor device according to claim 1, wherein the thin film is a metal having a resin on the surface or a metal having a ceramic on the surface. 3. The optical semiconductor device according to claim 2, wherein a metal constituting the thin plate is sealed with a resin and is electrically independent of the lead electrode. 4. A method of forming an optical semiconductor device having an optical semiconductor element disposed therein, wherein: (a) a step of forming a through hole in an insulating flat plate; and (b) a step of forming an insulating flat plate and a metal via an adhesive sheet. (C) forming at least a pair of lead electrodes on the insulating flat plate;
(D) a step of die-bonding the optical semiconductor element to the adhesive sheet on the bottom surface of the cavity using the through hole by a die bonding member having at least a resin; and (e) forming each of the electrodes of the optical semiconductor element and the insulating flat plate. And (f) covering at least the optical semiconductor element with a light-transmitting resin. 5. A method for forming an optical semiconductor device having an optical semiconductor element disposed therein, wherein: (a) a step of forming a through hole in an insulating flat plate having an adhesive sheet; and (b) via the adhesive sheet. (C) forming at least a pair of lead electrodes on the insulating flat plate, and (c) forming at least a pair of lead electrodes on the insulating flat plate; A step of die-bonding the optical semiconductor device to the ceramic on the bottom surface of the cavity using at least a through-hole using a die-bonding member having at least a resin; and (e) each electrode of the optical semiconductor device and a lead electrode formed on the insulating flat plate. Characterized by comprising a step of electrically connecting the optical semiconductor elements with a conductive material, and a step of (f) covering at least the optical semiconductor element with a translucent resin. Method of forming the device.