JP2005327786A - Method of manufacturing light emitting diode element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce variations in thicknesses of translucent synthetic resins 12 and 33 when coating light emitting diode chips 1 and 21 except for n-electrodes 6 and 25 and p-electrodes 7 and 26, by the translucent synthetic resins 12 and 33 containing the powder of a fluorescent material. <P>SOLUTION: Many of the light emitting diode chips 1 and 21 are so bonded to sheets 8, 28, and 29 that the n-electrodes 6 and 25 and the p-electrodes 7 and 26 may be close to the sheets. Then, the sheets are filled up with the translucent synthetic resin containing the powder of a fluorescent material in a liquid state, and then the translucent synthetic resin is hardened to make the sheets into resin plates 10 and 31. The resin plates are diced by cutting portions between the individual light emitting diode chips by a cutting width S narrower than the intervals L between the side faces of the individual light emitting diode chips. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method of manufacturing a light-emitting diode element formed by coating the light-emitting diode chip with a light-transmitting synthetic resin containing a fluorescent substance powder among light-emitting diode elements using a light-emitting diode chip. .

  Recently, for example, a GaN-based light emitting diode chip that emits blue light has been developed, and it is well known that this blue light emitting diode chip exhibits high luminance.

  Further, recently, by utilizing the fact that the blue light emitting diode chip has high luminance, the surface of the light emitting diode chip is coated with a light-transmitting synthetic resin containing a fluorescent substance powder, A part of the wavelength of blue light emission is converted to yellow by the fluorescent substance in the coating, and by mixing these colors, white light is emitted with high luminance.

  By the way, when the wavelength of the blue light emitting diode chip is converted to white light emission by coating it with a light transmissive synthetic resin containing a fluorescent substance powder, the film thickness of the light transmissive synthetic resin is as follows: For example, when it is thick, the rate of wavelength conversion to yellow-green is high, resulting in a strong color tone of yellow-green, and when it is thin, the rate of wavelength conversion of blue is low, resulting in a strong color tone of blue As described above, since the film thickness of the light-transmitting synthetic resin has a great influence on the wavelength conversion, the film thickness of the light-transmitting synthetic resin should be made substantially equal for each of a large number of the light-emitting diode chips. And the surface of the light-transmitting synthetic resin needs to be a smooth plane.

  Patent Document 1 as a prior art proposes a method as described below for coating the blue light emitting diode chip with a light-transmitting synthetic resin containing a powder of a fluorescent substance.

That is, as a light-emitting diode chip, an n-type semiconductor layer and a p-type semiconductor layer are stacked on one side of a transparent substrate with a light-emitting layer interposed therebetween, and an n-electrode and the p-type semiconductor layer connected to the n-type semiconductor layer Using a so-called flip-chip light emitting diode chip, a plurality of light emitting diode chips are formed on a material substrate constituting a submount substrate in each of the light emitting diode chips. On the upper surface, the n electrode and the p electrode in each light emitting diode chip are mounted so as to be electrically connected to the wiring pattern in each submount substrate of the material substrate, and then the phosphor powder is applied on the upper surface of the material substrate. Covering the whole of each light emitting diode chip by screen printing using a mask with a light-transmitting synthetic resin Cured was coated on so that, then, the material substrate, a method of dicing dividing said at dicing cutter submount substrate for each LED chip.
JP 2001-15817 A

  However, the method in the prior art is a method in which a light-emitting diode chip is mounted on the submount substrate and covered with a light-transmitting synthetic resin containing a fluorescent substance powder, and a submount substrate is required. As a result, there is a problem that the cost is greatly increased, and there is a problem that it cannot be applied to a light-emitting diode chip that is not mounted on a submount substrate.

  In addition, in the method in the prior art, the light-transmitting synthetic resin applied to the light-emitting diode chip by screen printing loses its shape until it is cured, whereby a film between the light-emitting diode chip and the light-emitting diode chip is formed. There is a problem that not only the thin and thick variations are likely to occur, but also the surface of the light-transmitting synthetic resin has irregularities and cannot be made a smooth flat surface, so that the light tone is uneven. It was.

  An object of the present invention is to provide a method capable of reliably coating a light-emitting diode chip with a light-transmitting synthetic resin containing a fluorescent substance powder regardless of the submount substrate. .

In order to achieve this technical problem, claim 1 of the present invention provides:
“An n-type semiconductor layer and a p-type semiconductor layer are stacked on one side of a transparent substrate with a light emitting layer therebetween, and an n-electrode connected to the n-type semiconductor layer and a p-electrode connected to the p-type semiconductor layer are formed. A plurality of light emitting diode chips each having a flip chip structure are bonded to the top surface of the light emitting diode chip so that the n-electrode and the p-electrode are in close contact with each other; A step of filling a light-transmitting synthetic resin containing a light substance powder in a liquid state so that the entire light-emitting diode chip is embedded and then curing to form a resin plate; and It comprises a step of dicing a portion between the diode chips with a cutting width narrower than a distance between the side surfaces of each light emitting diode chip. "
It is characterized by that.

Further, claim 4 of the present invention provides
“An n-type semiconductor layer and a p-type semiconductor layer are stacked with a light emitting layer interposed therebetween, and an n-electrode connected to the n-type semiconductor layer is provided on one end face in the stacking direction on the other end face in the stacking direction. A light emitting diode chip having a structure in which p electrodes connected to each other are formed, with respect to the upper surface of the first sheet and the lower surface of the second sheet, the n electrode or the p electrode in the light emitting diode chip is the p electrode or n A step of adhering a plurality of electrodes so that the electrodes are in close contact with each of the second sheets so as to be peeled off, and a light-transmitting synthetic resin containing a fluorescent substance powder between the first sheet and the second sheet in a liquid state And then curing the resin plate to form a resin plate, and dicing the portion of the resin plate between the light emitting diode chips with a cutting width narrower than the distance between the side surfaces of the light emitting diode chips. Consisting of process. "
It is characterized by that.

  According to the configuration described in claim 1, the entire structure excluding the n-electrode and the p-electrode among the light-emitting diode chips having the flip-chip structure is not mounted on the submount substrate as in the prior art. Since it can be reliably coated with a light-transmitting synthetic resin containing a fluorescent substance powder, the submount substrate can eliminate the significant increase in cost required for coating with the light-transmitting synthetic resin. Even when not used, it can be applied reliably.

  In addition, it is possible to reliably avoid the light-transmitting synthetic resin that covers the light-emitting diode chip from adhering to both the n-electrode and the p-electrode in the light-emitting diode chip. The certainty of the electrical connection to the electrode can be ensured.

  In addition, by dicing the cured resin plate, the variation in film thickness can be reduced so that the film thickness in the light-transmitting synthetic resin covering the light-emitting diode chip is substantially constant, and Since the surface of the light-transmitting synthetic resin that covers the light-emitting diode chip can be a smooth flat surface with less unevenness, it is possible to reliably avoid spotting in the color tone of light.

  According to the first aspect of the present invention, as described in the second aspect, the fluorescent substance powder mixed with the light-transmitting synthetic resin is provided with a step of precipitating the fluorescent substance powder. Since the density of the fluorescent substance in the periphery of the light emitting diode chip increases, the effect of color tone conversion by the fluorescent substance is reliably achieved in a state where the amount of the fluorescent substance used is reduced. The amount of fluorescent material used can be reduced, and the luminance of the light transmitted through the light-transmitting synthetic resin is dispersed throughout the thickness of the light-transmitting synthetic resin. There is an advantage that can be improved even if it is.

  Further, in the invention of claim 1, by making it as described in claim 3, the manufactured light-emitting diode elements are surely put on the expansion sheet one by one from the expansion sheet without being separated. There is an advantage that it can be supplied to a predetermined use place in a state where it is adhered at an interval such that it can be picked up.

  Next, according to the invention described in claim 3, a light emitting diode chip having a structure in which one end surface in the stacking direction is an n-electrode and the other end surface is a p-electrode is used. Except for the p-electrode on the end face, it can be reliably coated with a light-transmitting synthetic resin containing a fluorescent substance powder.

  In addition, it is possible to reliably avoid the light-transmitting synthetic resin that covers the light-emitting diode chip from adhering to both the n-electrode and the p-electrode in the light-emitting diode chip. The certainty of the electrical connection to the electrode can be ensured.

  In addition, by dicing the cured resin plate, the variation in film thickness can be reduced so that the film thickness in the light-transmitting synthetic resin covering the light-emitting diode chip is substantially constant, and Since the surface of the light-transmitting synthetic resin that covers the light-emitting diode chip can be a smooth flat surface with less unevenness, it is possible to reliably avoid spotting in the color tone of light.

  In the third aspect of the invention, as described in the fourth aspect, the fluorescent substance powder mixed with the light-transmitting synthetic resin is precipitated toward the inclined surface of the outer periphery of the light-emitting diode chip. Since the density of the fluorescent substance in the periphery of the light emitting diode chip is increased, the wavelength conversion effect by the fluorescent substance can be reliably achieved with a small amount of the fluorescent substance used, The amount of the substance used can be reduced, and the brightness of the light transmitted through the light-transmitting synthetic resin can be reduced depending on the case where the fluorescent substance is dispersed throughout the thickness direction of the light-transmitting synthetic resin. There is an advantage that can be improved.

  Moreover, in this invention of Claim 3, by making it as described in Claim 4, the manufactured light emitting diode element is reliably made to the said expansion sheet from the said expansion sheet one by one, without falling apart. There is an advantage that it can be supplied to a predetermined use place in a state where it is adhered at an interval such that it can be picked up.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 to 12 show a first embodiment.

  Of these figures, FIGS. 1 and 2 show a light-emitting diode chip 1 used in the first embodiment.

  The light-emitting diode chip 1 is formed by laminating an n-type semiconductor layer 3 and a p-type semiconductor layer 4 with a blue light-emitting layer 5 interposed therebetween on one surface of a transparent substrate 2 such as sapphire, and the n-type semiconductor layer. 3 is a flip chip structure in which an n electrode 6 connected to 3 and a p electrode 7 connected to the p-type semiconductor layer 4 are formed.

  Then, as shown in FIG. 3, a large number of the light-emitting diode chips 1 having the flip chip structure are arranged in a matrix form in the vertical and horizontal directions on the upper surface of the heat-resistant synthetic resin such as polyester or polyimide. The n-electrode 6 and the p-electrode 7 in the light-emitting diode chip 1 are adhered to the sheet 8 so that they can be peeled off.

  Next, as shown in FIG. 4, a frame body 9 configured so as to surround a large number of the light emitting diode chips 1 is fixed to the upper surface of the sheet 8.

  Next, as shown in FIG. 5, in the frame 9, a light-transmitting synthetic resin obtained by previously mixing a fluorescent substance powder that converts the color of blue light emission into white light emission is in a liquid state. Is the depth at which the entire LED chip 1 is buried, that is, injected from the upper surface 1b of each LED chip 1 until the synthetic resin rises by a predetermined thickness T1, and then is heated in a heating furnace? Or it forms in the resin board 10 by performing the process of the hardening process of irradiating an ultraviolet-ray.

  In the step of injecting the synthetic resin in a liquid state, this is performed in a vacuum to prevent bubbles from entering the resin plate 10.

  Further, when the light-transmitting synthetic resin formed on the resin plate 10 is an epoxy resin or a hard silicon resin, by using a silicon-based adhesive for bonding the light-emitting diode chip 1 to the sheet 8, Each light emitting diode chip 1 is configured to be peelable from the sheet 8.

  Next, as shown in FIG. 6, the frame body 9 is removed from the sheet 8, and further, the sheet 8 is peeled and removed from the resin plate 10 as shown in FIG. 7.

  Next, as shown in FIG. 8, the resin plate 10 is cut at a portion between the light emitting diode chips 1 of the resin plate 10 that is narrower than the distance L between the side surfaces 1 a of the light emitting diode chips 1. By dicing with the S dicing cutter 11, the light emitting diode chips 1 are divided.

  Through these series of steps, as shown in FIGS. 9 and 10, the light-transmitting synthetic resin having a film thickness T <b> 1 exists on the upper surface 1 b of each light-emitting diode chip 1, while each light-emitting diode chip 1. Since the light-transmitting synthetic resin having a film thickness T2 remains on the side surface of each of the light-emitting diodes, the light-emitting diode chips 1 having the flip chip structure are connected to the portions of the n-electrode 6 and the p-electrode 7 in the light-emitting diode chip 1. In addition, the light-transmitting synthetic resin 12 containing the fluorescent substance powder can be coated. In other words, the light-emitting diode chip 1 is made of the fluorescent substance except for the n-electrode 6 and the p-electrode 7. A light-emitting diode element 13 formed by coating with a light-transmitting synthetic resin 12 containing powder can be manufactured.

  By the way, when dividing the resin plate 10 for each light emitting diode chip 1, as shown in FIG. 11, an expansion sheet 14 is attached to the resin plate 10 from which the sheet 8 has been peeled. The resin plate 10 is replaced with the expansion sheet 14 from the sheet 8, and in this state, as shown in FIG. 12, the portion between the light emitting diode chips 1 of the resin plate 10 is a side surface of each light emitting diode chip 1. By dicing with a dicing cutter 11 having a cutting width S narrower than the interval dimension L between 1a, the light-emitting diode chip 1 is divided for each, and then the expansion sheet 14 is vertically and horizontally, that is, in FIG. By extending in the direction indicated by the arrow A and the direction perpendicular to the paper surface of FIG. To widen the spacing dimension between the mutually-emitting diode chip 1.

  By adopting such a manufacturing process, the manufactured light emitting diode elements 13 are bonded to the expansion sheet 14 at intervals so as to be surely picked up one by one from the expansion sheet 14 without being separated. Thus, there is an advantage that it can be supplied to a predetermined use location.

  Further, between the step of injecting the light-transmitting synthetic resin in a liquid state and the step of curing the same, the fluorescent substance mixed with the light-transmitting synthetic resin is allowed to stand for an appropriate period of time. The step of precipitating the powder is added.

  By providing this precipitation step, the fluorescent substance powder mixed in the light-transmitting synthetic resin is precipitated toward the light-emitting diode chip 1 and the density of the fluorescent substance around the light-emitting diode chip 1 is increased. Therefore, the effect of the color tone conversion by the fluorescent substance can be reliably achieved in a state where the amount of the fluorescent substance used is reduced, and the light emitted through the light-transmitting synthetic resin 12 is emitted. The luminance can be improved even when the fluorescent substance is dispersed throughout the thickness direction of the light-transmitting synthetic resin.

  Next, FIGS. 14 to 25 show a second embodiment.

  Of these drawings, FIGS. 13 to 15 show a light-emitting diode chip 21 used in the second embodiment.

  This light-emitting diode chip 21 is formed by laminating a p-type semiconductor layer 23 on a lower surface of a transparent thick n-type semiconductor layer 22 such as an n-type SiC crystal substrate, with a blue-light emitting layer 24 interposed therebetween, A structure in which an n-electrode 25 is formed on the upper surface of the n-type semiconductor layer 22 and a p-electrode 26 is formed on the lower surface of the p-type semiconductor layer 23, that is, the n-type semiconductor layer 22 and the p-type semiconductor layer 23 are interposed therebetween. The n-type electrode 25 connected to the n-type semiconductor layer 22 is formed on one end face in the stacking direction, and the p-electrode 26 connected to the p-type semiconductor layer 23 is formed on the other end face in the stacking direction. Structure.

  Further, a part of the side surface 21a around the light emitting diode chip 21 is formed with an inclined surface 21b in which the lateral width dimension W1 in the upper part is made smaller than the lateral width dimension W2 in the lower part, and its lower surface. An insulating film 27 that seals the periphery of the light emitting layer 24, the p-type semiconductor layer 23, and the p-electrode 26 is formed.

  Furthermore, the n-electrode 25 on the upper surface of the light-emitting diode chip 21 is composed of a circular bonding portion 25a for wire-bonding a metal wire and an extension portion 25b extending radially from the bonding portion 25a toward the four corners. By providing a portion where the n-electrode 25 is not formed on the upper surface of the light-emitting diode chip 21, that is, a portion where the transparent n-type semiconductor layer 22 such as the n-type SiC crystal substrate is directly exposed, this portion is provided. Is configured to emit light upward.

  Then, a large number of light emitting diode chips 21 having the above-described structure are arranged in a matrix form in the vertical and horizontal directions on the upper surface of the first sheet 28 made of heat-resistant synthetic resin such as polyester or polyimide, as shown in FIG. The p-electrode 26 in the light-emitting diode chip 21 is detachably bonded so as to be in close contact with the first sheet 28, and furthermore, the upper surface of each light-emitting diode chip 21 has heat resistance such as polyester or polyimide. The second sheet 29 made of synthetic resin is detachably bonded so that the second sheet 29 is in close contact with the n-electrode 25 in each light emitting diode chip 21.

  That is, in the light emitting diode chip 21 having the above structure, with respect to the upper surface of the first sheet 28 and the lower surface of the second sheet 29, the p electrode 26 in the light emitting diode chip 21 is the first sheet 28 and the n electrode 25 is the first electrode 25. Two sheets 29 are arranged in the vertical and horizontal directions so as to be in close contact with each other and are detachably bonded.

  In this case, the light emitting diode chip 21 may be turned upside down so that the n electrode 25 and the p electrode 26 of the light emitting diode chip 21 are in close contact with the first sheet 28 and the second sheet 29, respectively.

  Next, as shown in FIG. 17, a frame body 30 configured so as to surround a large number of the light emitting diode chips 21 is fixed to the upper surface of the first sheet 28.

  Next, as shown in FIG. 18, a light-transmitting synthetic resin obtained by previously mixing a fluorescent substance powder that converts the color of blue light emission into white light emission is injected into the frame 30 in a liquid state. By filling the synthetic resin between the first sheet 28 and the second sheet 29, and then performing an appropriate curing process step such as heating in a heating furnace or irradiating with ultraviolet rays. And formed on the resin plate 31.

  In the step of injecting the synthetic resin in a liquid state, this is performed in a vacuum, so that the space between the sheets 28 and 29 can be completely filled and the resin plate 31 is filled. Prevent air bubbles from entering.

  Further, when the light-transmitting synthetic resin formed on the resin plate 31 is an epoxy resin or a hard silicon resin, a silicon-based adhesive is used for bonding the light-emitting diode chip 21 to both the sheets 28 and 29. Thereby, each said light emitting diode chip | tip 21 is comprised so that peeling with respect to both the sheets 28 and 29 is possible.

  Next, as shown in FIG. 19, the frame 30 is removed from the first sheet 28, and both the sheets 28 and 29 are peeled off from the resin plate 31 as shown in FIG. 20.

  Next, as shown in FIG. 21, the resin plate 31 is cut at a portion between the light emitting diode chips 21 of the resin plate 31 that is narrower than the distance L between the side surfaces 21 a of the light emitting diode chips 21. By dicing with the S dicing cutter 32, each light emitting diode chip 21 is divided.

  Through these series of steps, as shown in FIG. 22 and FIG. 23, the light-transmitting synthetic resin is formed on the side surface of each light-emitting diode chip 1 by a half of the value obtained by subtracting the cutting width S from the interval L. Therefore, the light emitting diode chip 21 having a structure in which the n electrode 25 is provided on one end face and the p electrode 26 is provided on the other end face, the portions of the n electrode 25 and the p electrode 26 in the light emitting diode chip 21 are provided. In other words, the light-emitting diode chip 21 can be covered with the fluorescent material except for the n-electrode 25 and the p-electrode 26. A light-emitting diode element 34 coated with a light-transmitting synthetic resin 33 containing this powder can be manufactured.

  Also in the second embodiment, when the resin plate 31 is divided for each light-emitting diode chip 21, the resin plate 31 from which both the sheets 28 and 29 are peeled is shown in FIG. The expansion sheet 35 is affixed, in other words, the resin plate 31 is replaced with the expansion sheet 35 from both the sheets 28 and 29, and in this state, as shown in FIG. A portion between the chips 21 is divided into each light emitting diode chip 21 by dicing with a dicing cutter 32 having a cutting width S narrower than the distance L between the side surfaces 21a of each light emitting diode chip 21, and then, The expansion sheet 35 in the vertical and horizontal directions, that is, the direction indicated by the arrow A in FIG. By stretching in the paper at right angles with the direction of 25, to widen the spacing dimension between each other of the respective light-emitting diode chips 21.

  By adopting such a manufacturing process, the manufactured light emitting diode elements 34 are bonded to the expansion sheet 35 at intervals so as to be surely picked up from the expansion sheet 35 one by one without being separated. Thus, there is an advantage that it can be supplied to a predetermined use location.

  Moreover, the fluorescence mixed with the light-transmitting synthetic resin by allowing the light-transmitting synthetic resin to stand for an appropriate period of time between the step of injecting and filling the light-transmitting synthetic resin in a liquid state and the step of curing the resin. A step of precipitating the substance powder is added.

  By providing this precipitation step, the fluorescent substance powder mixed in the light-transmitting synthetic resin is precipitated toward the inclined surface 21 b on the outer periphery of the light-emitting diode chip 21, and the fluorescent light around the light-emitting diode chip 21 is formed. Since the density of the substance is increased, the wavelength conversion effect by the fluorescent substance can be reliably achieved in a state where the amount of the fluorescent substance used is reduced.

  By the way, in the light emitting diode chip 21 having the structure shown in FIGS. 13 to 15, the n-type semiconductor layer 22 is exposed on the outer surface of the insulating film 27 on the lower surface, so that the insulating film 27 is surrounded. When the p electrode 26 surrounded by is electrically bonded to a lead frame or the like, if a conductive paste or solder such as silver paste is used, the conductive paste or solder protrudes outside the insulating film 27. As a result, an electrical short circuit occurs between the lead frame or the like and the n-type semiconductor layer 22, so that there is a problem that a conductive paste or solder cannot be used for the above-described joining.

  On the other hand, in the second embodiment, the p-electrode 26 on the other end surface of the light-emitting diode chip 21 is in close contact with the first sheet 28 or the second sheet 29, and the light-emitting diode chip 21 is light-transmitted. By covering with the transparent synthetic resin 33, as shown in FIG. 22, the light transparent synthetic resin 33 is extended to the outer portion of the insulating film 27 surrounding the p electrode 29. In other words, even the outer portion of the insulating film 27 surrounding the p-electrode 29 can be covered with the light-transmitting synthetic resin 33.

  Therefore, according to the present invention, when the p-electrode 26 on the other end surface of the light-emitting diode chip 21 is bonded to a lead frame or the like, there is an advantage that a conductive paste such as silver paste or solder can be used. .

It is a side view of the light emitting diode chip | tip used for 1st Embodiment. It is a top view of FIG. It is a figure which shows the 1st process in 1st Embodiment. It is a figure which shows the 2nd process in 1st Embodiment. It is a figure which shows the 3rd process in 1st Embodiment. It is a figure which shows the 4th process in 1st Embodiment. It is a figure which shows the 5th process in 1st Embodiment. It is a figure which shows the 6th process in 1st Embodiment. It is a vertical front view which shows the light emitting diode element by 1st Embodiment. FIG. 10 is a plan view of FIG. 9. It is a figure which shows another process in 1st Embodiment. FIG. 12 is a diagram showing a step subsequent to the step shown in FIG. 11. It is a partially cutaway side view of the light-emitting diode chip used in the second embodiment. FIG. 14 is a plan view of FIG. 13. FIG. 14 is a bottom view of FIG. 13. It is a figure which shows the 1st process in 2nd Embodiment. It is a figure which shows the 2nd process in 2nd Embodiment. It is a figure which shows the 3rd process in 2nd Embodiment. It is a figure which shows the 4th process in 2nd Embodiment. It is a figure which shows the 5th process in 2nd Embodiment. It is a figure which shows the 6th process in 2nd Embodiment. It is a vertical front view which shows the light emitting diode element by 2nd Embodiment. FIG. 23 is a plan view of FIG. 22. It is a figure which shows another process in 2nd Embodiment. FIG. 25 is a diagram showing a step subsequent to the step shown in FIG. 24.

Explanation of symbols

1,21 Light emitting diode chip 6,25 n electrode 7 in light emitting diode chip 7,26 p electrode in light emitting diode chip 8 sheet 28 first sheet 29 second sheet 10,31 resin plate 11,32 dicing cutter 12,33 fluorescent substance Light-transmitting synthetic resin containing powder of powder 14,35 Expansion sheet 13,34 Light-emitting diode element

Claims (6)

An n-type semiconductor layer and a p-type semiconductor layer are stacked on one side of a transparent substrate with a light emitting layer interposed therebetween, and an n-electrode connected to the n-type semiconductor layer and a p-electrode connected to the p-type semiconductor layer are formed. Adhering a plurality of flip-chip light emitting diode chips in a vertical and horizontal direction so that the n electrodes and p electrodes of the light emitting diode chips are in close contact with the upper surface of the sheet in a peelable manner;
Filling the sheet with a light-transmitting synthetic resin containing fluorescent substance powder on the upper surface so that the entire light-emitting diode chip is embedded in a liquid state, and then curing to form a resin plate;
A method of manufacturing a light-emitting diode element, comprising a step of dicing a portion between the light-emitting diode chips in the resin plate with a cutting width narrower than a distance between side surfaces of the light-emitting diode chips.   2. The method of claim 1, further comprising a step of precipitating the fluorescent substance powder between the step of filling the light-transmitting synthetic resin in a liquid state and the step of curing the same. A method for producing a light-emitting diode element, characterized by   The method according to claim 1 or 2, wherein the step of dicing the resin plate is performed in a state where the resin plate is replaced from the sheet to an expansion sheet, and then the expansion sheet is stretched in the vertical and horizontal directions. A method for manufacturing a light emitting diode device. An n-type semiconductor layer and a p-type semiconductor layer are stacked with a light emitting layer interposed therebetween, and an n-electrode connected to the n-type semiconductor layer on one end surface in the stacking direction is formed on the p-type semiconductor layer on the other end surface in the stacking direction. A light-emitting diode chip having a structure in which p-electrodes to be connected are respectively formed, and an n-electrode or a p-electrode in the light-emitting diode chip is a p-electrode or an n-electrode on the first sheet with respect to the upper surface of the first sheet and the lower surface of the second sheet. A plurality of pieces arranged vertically and horizontally so as to be in close contact with the second sheet, and releasably bonding,
A step of filling a light-transmitting synthetic resin containing a fluorescent substance powder in a liquid state between the first sheet and the second sheet and then curing to form a resin plate;
A method of manufacturing a light-emitting diode element, comprising: dicing a portion between the light-emitting diode chips of the resin plate with a cutting width narrower than a distance between side surfaces of the light-emitting diode chips.   5. The process according to claim 4, wherein the light-emitting diode chip is provided with an inclined surface facing inward toward the second sheet on a side surface thereof, and filling the light-transmitting synthetic resin in a liquid state. A method for producing a light-emitting diode element, comprising: a step of precipitating the fluorescent substance powder between the step of curing the phosphor.   6. The process according to claim 4, wherein the step of dicing the resin plate is performed in a state where the resin plate is replaced with an expansion sheet from the first sheet and the second sheet, and then the expansion sheet is vertically and horizontally. The manufacturing method of the light emitting diode element characterized by extending | stretching.

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