JP2005116253A - Manufacturing device of display device, and manufacturing method of display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing device and a manufacturing method of a display device wherein damages to a display element can be reduced in manufacturing of a sealed body in order to maintain superior display performance over a long term. <P>SOLUTION: In the manufacturing device of the display device, this has a housing part 701 to house a materials source S in order to form a buffer layer or a barrier layer, a substrate holder 702 to retain a substrate SUB equipped with an effective part 106 in a state that its main face is opposed to the housing part 701, and a heat shielding plate 703 arranged between the housing part 701 and the substrate SUB retained by the substrate holder 702. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a display device manufacturing apparatus and a display device manufacturing method, and more particularly to a sealing body manufacturing apparatus and a manufacturing method thereof for sealing an effective portion of a self-luminous display device.

  In recent years, organic electroluminescence (EL) display devices have attracted attention as flat display devices. Since this organic EL display device has a self-luminous element, the organic EL display device has a wide viewing angle, can be thinned without requiring a backlight, can reduce power consumption, and has a high response speed. It has the following features.

  From these characteristics, the organic EL display device is attracting attention as a promising candidate for a next-generation flat display device that replaces the liquid crystal display device. Such an organic EL display device includes an array substrate in which organic EL elements each having an organic active layer containing an organic compound having a light emitting function sandwiched between an anode and a cathode are arranged in a matrix.

When the organic EL element is exposed to moisture or oxygen contained in the outside air, its light emission characteristics are rapidly deteriorated. For this reason, various techniques for shielding and sealing the main surface on which the organic EL elements are arranged on the array substrate from the outside air have been proposed. For example, a film sealing technique in which an organic film and an inorganic film are stacked on an electrode disposed on the surface side of an organic EL element is disclosed (for example, see Non-Patent Document 1).
Yuji Yanagi, “Compatible with mass production of thin, large and flexible substrates”, Flat Panel Display 2003, Nikkei Business Publications, December 27, 2002, p. 264-270

  When forming a sealing body for sealing an organic EL element, it is required to form a film having good step coverage and having no defects such as pinholes and cracks. However, it is actually difficult to obtain a complete defect-free film. For this reason, the organic EL element cannot be completely shielded from the outside air, and it becomes difficult to maintain sufficient performance over a long period of time.

  Further, when forming the sealing body, there is a possibility that the organic EL element may be damaged due to an increase in the substrate temperature or collision of electrons or ions with the substrate during the formation of the organic film and the inorganic film. . Therefore, it is required to reduce the influence of heat and electrons on the organic EL element when forming each thin film constituting the sealing body.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to reduce damage to a display element when manufacturing a sealing body for maintaining good display performance over a long period of time. An object of the present invention is to provide a display device manufacturing apparatus and a display device manufacturing method.

The display device manufacturing apparatus according to the first aspect of the present invention comprises:
An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An accommodating portion for accommodating a material source for forming the buffer layer or the barrier layer;
A substrate holder for holding the substrate having the effective portion in a state in which a main surface thereof faces the accommodating portion;
A heat insulating plate disposed between the housing portion and the substrate held by the substrate holder;
It is provided with.

An apparatus for manufacturing a display device according to the second aspect of the present invention provides:
An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An accommodating portion for accommodating a material source for forming the barrier layer;
A substrate holder for holding the substrate having the effective portion in a state in which a main surface thereof faces the accommodating portion;
A conductive grid disposed between the housing portion and the substrate held by the substrate holder and grounded;
It is provided with.

An apparatus for manufacturing a display device according to a third aspect of the present invention provides:
An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An electron beam source for irradiating an electron beam;
A substrate holder for holding the substrate in a state where a main surface on which a material source for forming the buffer layer is formed is opposed to the electron beam source;
A grounded conductive grid disposed between the electron beam source and the substrate held by the substrate holder;
It is provided with.

A manufacturing method of a display device according to the fourth aspect of the present invention includes:
On the main surface of the substrate, an effective portion having a plurality of pixels for displaying an image is formed,
A manufacturing method of a display device, wherein a sealing body is disposed so as to cover at least the effective portion of a substrate main surface,
The manufacturing process of the sealing body includes:
Forming at least two buffer layers;
Forming a barrier layer that is a larger pattern than the buffer layer and covers each buffer layer,
In the step of forming the buffer layer and the barrier layer, the absorbed dose of the electron beam irradiated toward the main surface of the substrate is set to 200 J / g or less.

  According to the present invention, it is possible to provide a display device manufacturing apparatus and a display device manufacturing method capable of reducing damage to a display element when manufacturing a sealing body.

  A display device manufacturing apparatus and a display device manufacturing method according to an embodiment of the present invention will be described below with reference to the drawings. In this embodiment, a self-luminous display device such as an organic EL (electroluminescence) display device will be described as an example of the display device.

  As shown in FIGS. 1 and 2, the organic EL display device 1 includes an array substrate 100 having a display area 102 for displaying an image, and a sealing member 200 for sealing at least the display area 102 of the array substrate 100. Composed. The display area 102 of the array substrate 100 is configured by a plurality of pixels PX (R, G, B) arranged in a matrix.

  Each pixel PX (R, G, B) is supplied via a pixel switch 10 and a pixel switch 10 having a function of electrically separating an on-pixel and an off-pixel and holding a video signal to the on-pixel. The driving transistor 20 supplies a desired driving current to the display element based on the video signal, and the storage capacitor element 30 holds the gate-source potential of the driving transistor 20 for a predetermined period. The pixel switch 10 and the drive transistor 20 are constituted by, for example, thin film transistors, and here, polysilicon is used for their semiconductor layers.

  Each pixel PX (R, G, B) includes an organic EL element 40 (R, G, B) as a display element. That is, the red pixel PXR includes an organic EL element 40R that emits red light, the green pixel PXG includes an organic EL element 40G that emits green light, and the blue pixel PXB includes an organic EL element 40B that emits blue light. I have.

  The configurations of the various organic EL elements 40 (R, G, B) are basically the same, and the organic EL elements 40 are arranged in a matrix and are formed in an independent island shape for each pixel PX. A second electrode 66 disposed opposite to the first electrode 60 and formed in common to all the pixels PX, an organic active layer 64 held between the first electrode 60 and the second electrode 66, It is constituted by.

  The array substrate 100 includes a plurality of scanning lines Ym (m = 1, 2,...) Arranged along the row direction of the pixels PX (that is, the Y direction in FIG. 1), and a direction substantially orthogonal to the scanning lines Ym (that is, A plurality of signal lines Xn (n = 1, 2,...) Arranged along the X direction in FIG. 1, and a power supply line P for supplying power to the first electrode 60 side of the organic EL element 40. It is equipped with.

  The power supply line P is connected to a first electrode power line (not shown) arranged around the display area 102. The second electrode 66 side of the organic EL element 40 is connected to a second electrode power supply line (not shown) that is arranged around the display area 102 and supplies a common potential (here, a ground potential).

  Further, the array substrate 100 has a scanning line driving circuit 107 that supplies a scanning signal to each of the scanning lines Ym and a signal that supplies a video signal to each of the signal lines Xn in the peripheral area 104 along the outer periphery of the display area 102. A line driving circuit 108. All the scanning lines Ym are connected to the scanning line driving circuit 107. All signal lines Xn are connected to the signal line driving circuit 108.

  Here, the pixel switch 10 is disposed in the vicinity of the intersection between the scanning line Ym and the signal line Xn. The pixel switch 10 has a gate electrode connected to the scanning line Ym, a source electrode connected to the signal line Xn, and a drain electrode connected to one electrode constituting the storage capacitor 30 and the gate electrode of the drive transistor 20. The source electrode of the drive transistor 20 is connected to the other electrode constituting the storage capacitor element 30 and the power supply line P, and the drain electrode is connected to the first electrode 60 of the organic EL element 40.

  As shown in FIG. 2, the array substrate 100 includes an organic EL element 40 disposed on the wiring substrate 120. Note that the wiring substrate 120 is formed on an insulating support substrate such as a glass substrate or a plastic sheet, the pixel switch 10, the driving transistor 20, the storage capacitor element 30, the scanning line driving circuit 107, the signal line driving circuit 108, and various wirings (scanning). Line, signal line, power supply line, etc.).

  The first electrode 60 constituting the organic EL element 40 is disposed on the insulating film on the surface of the wiring substrate 120. Here, the first electrode 60 is formed of a light-transmitting conductive member such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), and functions as an anode.

  The organic active layer 64 includes at least an organic compound having a light emitting function, and may be configured by a three-layer stack of a hole buffer layer formed in common for each color, an electron buffer layer, and an organic light emitting layer formed for each color. It may be composed of two layers or a single layer functionally combined. For example, the hole buffer layer is disposed between the anode and the organic light emitting layer, and is formed of a thin film such as an aromatic amine derivative, a polythiophene derivative, or a polyaniline derivative. The organic light emitting layer is formed of an organic compound having a light emitting function that emits red, green, or blue light. This organic light emitting layer is constituted by a thin film such as PPV (polyparaphenylene vinylene), a polyfluorene derivative, or a precursor thereof when, for example, a polymer light emitting material is employed.

  The second electrode 66 is disposed on the organic active layer 64 in common with each organic EL element 40. The second electrode 66 is formed of a metal film having an electron injection function such as Ca (calcium), Al (aluminum), Ba (barium), Ag (silver), Yb (ytterbium), and functions as a cathode. Yes. The second electrode 66 may have a two-layer structure in which the surface of a metal film functioning as a cathode is covered with a cover metal. The cover metal is made of aluminum, for example.

  The surface of the second electrode 66 is desirably coated with a hygroscopic material as a desiccant. That is, when the organic EL element 40 is exposed to moisture, its light emission characteristics are rapidly deteriorated. For this reason, the desiccant 68 is arrange | positioned on the 2nd electrode 66 equivalent to the surface for the purpose of protecting the organic EL element 40 from a water | moisture content. The desiccant 68 may be any material having hygroscopicity. For example, a simple alkali metal such as lithium (Li), sodium (Na), potassium (K) or an oxide thereof, or magnesium (Mg), calcium ( It is formed of an alkaline earth metal such as Ca) or barium (Ba) or an oxide thereof.

  In addition, the array substrate 100 includes a partition wall 70 that separates the pixels RX (R, G, B) for each adjacent color in the display area 102. The partition wall 70 is preferably formed so as to separate each pixel. Here, the partition wall 70 is arranged in a lattice shape along the periphery of each first electrode 60, and the opening shape of the partition wall exposing the first electrode 60 is used. Is formed to be circular or polygonal. The partition wall 70 is formed of a resin material. For example, the partition wall 70 is formed of a lyophilic organic material and a liquid-phobic organic material disposed on the first insulating layer. The second insulating layer is laminated.

  In the organic EL element 40 configured as described above, holes and electrons are injected into the organic active layer 64 sandwiched between the first electrode 60 and the second electrode 66, and these are recombined to generate excitons. It emits light by light emission having a predetermined wavelength that is generated when the exciton is deactivated. Here, the EL light emission is emitted from the lower surface side of the array substrate 100, that is, the first electrode 60 side, and constitutes a display screen.

  Meanwhile, the array substrate 100 includes an effective portion 106 formed on the main surface of the wiring substrate 120. The effective unit 106 includes a display area 102 including at least a plurality of pixels PX (R, G, B) for displaying an image, but includes a scanning line driving circuit 107, a signal line driving circuit 108, and the like. The provided peripheral area 104 may be included.

  The array substrate 100 includes a sealing body 300 disposed so as to cover at least the effective portion 106 of the main surface of the wiring substrate 120. The surface of the sealing body 300 is almost flattened. The sealing member 200 is bonded to the sealing body 300 with an adhesive applied to the entire surface of the sealing body 300. The sealing member 200 is composed of a light-transmitting insulating film such as a plastic sheet, diamond-like carbon, or the like.

  The sealing body 300 includes buffer layers 311, 312, and barrier layers 320, 321, 322... That have a pattern having a larger formation area than these buffer layers and that cover the buffer layers from the outside air. It has a laminated structure. The outermost layer and the innermost layer of the sealing body 300 are desirably barrier layers. Each barrier layer preferably covers the side surface of the lower buffer layer around the barrier layer.

  Each of the buffer layers 311, 312... Is formed of an organic material such as an acrylic resin with a film thickness of about 0.1 to 5 μm, for example. In particular, as a material for forming these buffer layers 311, 312..., A material that is applied in a relatively low-viscosity liquid state and is cured in a state in which unevenness in the lower layer is absorbed can be selected. desirable. The buffer layers 311, 312... Formed using such a material have a function as a flattening layer for flattening their surfaces.

  Each of the barrier layers 320, 321, 322,... Is, for example, 0.1 μm by an inorganic material such as a metal material such as aluminum or titanium, a metal oxide material such as ITO or IZO, or a ceramic material such as alumina. It is formed with a film thickness of the order. In the case of the bottom emission method in which EL light is extracted from the first electrode 60 side, it is desirable that the material applied as at least one of the barrier layers 320, 321, 322,... Has light shielding properties and light reflecting properties. In the case of a top emission method in which EL light is extracted from the second electrode 66 side, it is desirable that the material applied as the barrier layers 320, 321, 322,...

Next, a method for manufacturing an organic EL display device will be described.
First, as shown in FIG. 3A, the effective portion 106 is formed on the main surface of the substrate SUB. The effective unit 106 is formed by repeating processes such as formation and patterning of a metal film and an insulating film, and the pixel switch 10, the drive transistor 20, the storage capacitor element 30, the scanning line drive circuit 107, and the signal line drive circuit. In addition to 108, various wirings such as a signal line Xn, a scanning line Ym, and a power supply line P, and a plurality of pixels PX each including an organic EL element 40 are included.

  Subsequently, the sealing body 300 is disposed so as to cover at least the effective portion 106 of the main surface of the substrate SUB. First, as shown in FIG. 3B, a base barrier layer 320 that shields the effective portion 106 from the outside air is formed. The base barrier layer 320 is formed by depositing a metal material in the first chamber 601 for forming a barrier layer shown in FIG. At this time, the base barrier layer 320 includes the effective portion 106 on the main surface of the substrate and is formed over a larger range than the effective portion 106.

  Subsequently, as shown in FIG. 3C, a first buffer layer 311 having a pattern larger than at least the effective portion 106 is formed on the base barrier layer 320. The first buffer layer 311 is formed by first evaporating the liquid monomer in the second chamber 602 for film formation of the buffer layer shown in FIG. 4, followed by the third chamber for hardening the buffer layer. At 603, it is formed by polymerizing the monomer. At this time, the first buffer layer 311 is formed over a range smaller than the base barrier layer 320 directly below and larger than the effective portion 106.

  When a photosensitive resin material (for example, an ultraviolet curable resin material) is applied as the monomer, the monomer is exposed at a predetermined exposure amount using a light source having a predetermined wavelength (for example, an ultraviolet wavelength) in the third chamber 603. Thereby, the formed monomer is cured by being polymerized, and the first buffer layer 311 is formed.

  When an electron beam curable resin material is applied as the monomer, the electron beam is irradiated to the monomer using the electron beam source in the third chamber 603. Thereby, the formed monomer is cured by being polymerized, and the first buffer layer 311 is formed.

  Here, in order to form the buffer layer, the second chamber 602 for forming the buffer layer and the third chamber 603 for curing the buffer layer are prepared, but the second chamber 602 is a light source or electron beam source having a predetermined wavelength. The film forming step and the curing step may be performed simultaneously in the second chamber 602. Further, it is possible to eliminate the curing step by depositing a resin material that is polymerized in the gas phase in the second chamber 602.

  After the first buffer layer 311 is formed, the first barrier layer that shields the first buffer layer 311 from the outside air in the first chamber 601 is the same as described with reference to FIG. 321 is formed. The first barrier layer 321 is formed over a larger range than the first buffer layer 311 directly below.

  Then, as described with reference to FIG. 3C, the second buffer layer 312 is formed on the first barrier layer 321 in the second chambers 602 and 603. The second buffer layer 312 is formed over a range smaller than the first barrier layer 321 immediately below and larger than the effective portion 106.

  Then, the second barrier layer 322 that shields the second buffer layer 312 from the outside air in the first chamber 601 is formed again. The second barrier layer 322 is formed over a larger range than the second buffer layer 312 immediately below. Through the steps as described above, a sealing body 300 having a structure as shown in FIG. 2 is formed.

  Subsequently, an adhesive is applied to the entire surface of the sealing body 300, that is, the entire surface of the second barrier layer 322, and the sealing member 200 is adhered. In the case where a plurality of array portions are formed on the mother substrate, the mother substrate is then cut into a single size for each array portion. Further, if necessary, a polarizing plate may be attached to the surface on the side from which EL light emission is taken out.

  According to the organic EL display device 1 manufactured by the manufacturing process as described above, it is possible to reliably cover the organic EL element 40 formed on the effective portion 106 which is not easily affected by the lower layer. Moreover, even if a microscopic gap is formed in either of the buffer layer or the barrier layer, by laminating a plurality of layers, the route to reach the organic EL element 40 is lengthened, and the lifetime is increased. It is effective enough. Therefore, the organic EL element 40 can be shielded from the outside air, and sufficient performance can be maintained over a long period of time. Further, when the sealing member 200 is bonded onto the sealing body 300 with an adhesive, or when the deflecting plate is bonded onto the sealing member 200 with an adhesive, the organic EL element 40 of impurities contained in the adhesive is used. Intrusion into the inside can be prevented, and deterioration of the performance of the organic EL element 40 can be prevented.

  (1) By the way, as a method for forming the barrier layer, a sputtering method, an electron beam evaporation method, or the like can be applied. However, in the sputtering method, mainly when ions collide with the substrate, the substrate itself is heated and the substrate temperature rises. Further, in the electron beam evaporation method, electrons (for example, secondary electrons emitted from a material source or electrons emitted from an electron beam source) collide with the substrate, whereby the substrate itself is heated and the substrate temperature rises. Such an increase in the substrate temperature damages the organic EL element already formed in the effective portion.

  Therefore, the first chamber 601 for forming the barrier layer is equipped with a manufacturing apparatus as described below. That is, as shown in FIG. 5, this manufacturing apparatus has a main part of a substrate SUB provided with a material source S for forming a barrier layer and a substrate SUB provided with an effective part 106, and the main surface faces the container 701. The substrate holder 702 that is held in a state in which it is held, and the heat insulating plate 703 that is disposed between the housing portion 701 and the substrate SUB held by the substrate holder 702 are configured.

  By providing such a heat insulating plate 703, an increase in the substrate temperature can be suppressed, and damage to the organic EL element can be avoided. In order to further suppress the rise in the substrate temperature, it is desirable to actively cool the heat insulating plate 703, and a cooling mechanism 704 may be provided. For example, the cooling mechanism 704 may be a mechanism that directly cools the heat insulating plate 703 with circulating water, or thermally contacts the heat insulating plate 703 formed of a material having high thermal conductivity such as copper and the cooling terminal. It may be a mechanism.

  In this manufacturing apparatus, the substrate SUB is integrated with a mask 705 aligned with the main surface on which the effective portion 106 is formed. This mask 705 is held by a mask holder 706. The mask 705 is often formed of a metal material, and is disposed close to the substrate SUB (may be disposed in close contact with the substrate SUB). For this reason, suppressing the temperature rise of the mask 705 is effective for suppressing the substrate temperature rise. Therefore, the mask holder 706 may be provided with a cooling mechanism. The substrate holder 702 may also be provided with a cooling mechanism to cool the back surface of the substrate SUB.

  Further, the manufacturing apparatus applicable to the electron beam evaporation method as shown in FIG. 5 includes an electron beam source 707 that irradiates the material source S accommodated in the accommodating portion 701 with an electron beam. The manufacturing apparatus applicable to the sputtering method does not require an electron beam source.

  As described above, even in a manufacturing apparatus equipped with an electron beam source applicable to the electron beam evaporation method, a heat insulating plate is provided between the material source and the substrate, thereby generating a collision between the material source and the electron. It is possible to prevent overheating of the substrate due to secondary electrons to be emitted and electrons emitted from the electron beam source. Further, even a manufacturing apparatus applicable to the sputtering method can prevent overheating of the substrate due to ions. Therefore, it is possible to reduce damage caused by heat of the display element already formed on the substrate.

  In the case where a low molecular weight material is used as the organic active layer 64 constituting the organic EL element 40, it is desirable to cool the substrate temperature to 120 ° C. or less. In the case of using a system material, it is desirable to cool the substrate temperature to 200 ° C. or less. As described above, the element damage can be reduced by controlling the temperature of the substrate so as to be equal to or lower than a predetermined temperature according to the material constituting the organic active layer.

  (2) As a method for forming the barrier layer, in the above-described electron beam evaporation method, in addition to the increase in the substrate temperature accompanying the collision of electrons, the electrons directly collide with the organic EL element already formed in the effective portion. This also damages the organic EL element. Further, the pixel switch and the driving transistor are also damaged by direct collision of electrons.

  Therefore, the first chamber 601 for forming the barrier layer is equipped with a manufacturing apparatus as described below. In addition, about the structure same as the manufacturing apparatus shown in FIG. 5, the same referential mark is attached | subjected and detailed description is abbreviate | omitted.

  That is, in this manufacturing apparatus, as shown in FIG. 6, the main surface of the substrate SUB provided with the storage unit 701 that stores the material source S for forming the barrier layer and the effective unit 106 is opposed to the storage unit 701. The substrate holder 702 that is held in a state of being held, and a grid 711 that is disposed between the housing portion 701 and the substrate SUB held by the substrate holder 702 and has grounding conductivity.

  By providing such a conductive grid 711, it is possible to absorb electrons from the material source S toward the substrate SUB, suppress an increase in the substrate temperature, and reduce the number of electrons directly colliding with the organic EL element. can do. For this reason, damage to the organic EL element can be avoided.

  In this manufacturing apparatus, the substrate SUB is integrated with a mask 705 aligned with the main surface on which the effective portion 106 is formed. This mask 705 is held by a mask holder 706. The mask 705 is often formed of a metal material, and is disposed close to the substrate SUB (may be disposed in close contact with the substrate SUB). Therefore, it is effective to ground the mask 705 in order to absorb unnecessary electrons.

  Further, the manufacturing apparatus applicable to the electron beam vapor deposition method as shown in FIG. 6 includes an electron beam source 706 that irradiates the material source S accommodated in the accommodating portion 701 with an electron beam.

  Thus, even in a manufacturing apparatus equipped with an electron beam source applicable to the electron beam evaporation method, by providing a conductive grid between the material source and the substrate, the collision between the material source and the electrons can be achieved. Overheating of the substrate and collision with the display element due to generated secondary electrons or electrons emitted from the electron beam source can be prevented. Therefore, it is possible to reduce damage to the display element already formed on the substrate.

  In order to further suppress the increase in the substrate temperature, a heat insulating plate 703 as shown in FIG. 5 may be provided, or a cooling mechanism is provided in the heat insulating plate 703, the mask holder 706, and the substrate holder 702 to mount the substrate. It may be actively cooled.

  In addition, it is desirable that the conductive grid 711 has an absorbed dose of an electron beam irradiated toward the main surface of the substrate of 200 J / g or less. As described above, by controlling the absorbed dose of the electron beam irradiated during the formation of the barrier layer to be a predetermined value or less, the damage to the element can be reduced.

  (3) On the other hand, among the methods for forming the buffer layer, as a method for forming a resin material, a heating vapor deposition method or the like is applicable. However, in the heating vapor deposition method, the substrate itself is heated mainly by the radiant heat from the heated unit, and the substrate temperature rises. Such an increase in the substrate temperature damages the organic EL element already formed in the effective portion.

  Therefore, the second chamber 602 for forming the buffer layer is equipped with a manufacturing apparatus as described below. In addition, about the structure same as the manufacturing apparatus shown in FIG. 5, the same referential mark is attached | subjected and detailed description is abbreviate | omitted.

  That is, as shown in FIG. 7, this manufacturing apparatus has a main surface of a substrate SUB provided with an accommodating portion 721 for accommodating a material source (resin material monomer) S for forming a buffer layer and an effective portion 106. Is configured to include a substrate holder 702 that is held in a state of facing the housing portion 721, and a heat insulating plate 722 that is disposed between the housing portion 721 and the substrate SUB held by the substrate holder 702.

  A manufacturing apparatus applicable to such a heating vapor deposition method includes various heated units. That is, in order to generate the vapor of the material source S, the material source S accommodated in the accommodating part 721 is heated by the heating source 723. Further, in order to prevent the material source S from being solidified when attached, the side wall portion 724 extending from the housing portion 721 toward the substrate holder 702 side is also heated.

  In such a manufacturing apparatus, since the heat insulating plate 722 is provided, an increase in the substrate temperature can be suppressed and damage to the organic EL element can be avoided. In particular, in order to reduce the influence of radiant heat from the housing portion 721 facing the main surface of the substrate, it is desirable to dispose the heat insulating plate 722 close to the housing portion 721.

  Thus, even in a manufacturing apparatus equipped with various heating units applicable to the heating vapor deposition method, the substrate is overheated by the radiant heat from the heating unit by providing a heat insulating plate between the material source and the substrate. Can be prevented. Therefore, it is possible to reduce damage caused by heat of the display element already formed on the substrate.

  In order to further suppress the rise in the substrate temperature, as described in (1), a cooling mechanism is provided in the heat insulating plate 722, the mask holder 706, and the substrate holder 702 so as to actively cool the substrate. It may be configured.

  (4) In addition, among the methods for forming the buffer layer, an electron beam curing method or the like is applicable as a method for curing the resin material. However, in the electron beam curing method, in addition to the increase in the substrate temperature accompanying the collision of electrons, the organic EL element is also damaged by the direct collision of electrons with the organic EL element already formed in the effective portion. Further, the pixel switch and the driving transistor are also damaged by direct collision of electrons.

  Therefore, the third chamber 603 for hardening the buffer layer is equipped with a manufacturing apparatus as described below. In addition, about the structure same as the manufacturing apparatus shown in FIG. 5, the same referential mark is attached | subjected and detailed description is abbreviate | omitted.

  That is, as shown in FIG. 8, the manufacturing apparatus has an electron beam source 731 that irradiates an electron beam and a main surface on which a material source (a monomer of a resin material) for forming a buffer layer is formed as an electron beam source. A substrate holder 702 that holds the substrate SUB in a state of facing the substrate 731, and a grid 732 that is disposed between the electron beam source 731 and the substrate SUB held by the substrate holder 702 and has grounding conductivity. Configured.

  The electron beam source 731 includes an electron beam generating unit 731A that generates an electron beam, a deflecting unit 731B that deflects the electron beam generated from the electron beam generating unit 731A, and the like.

  By providing such a conductive grid 732, it is possible to absorb electrons from the electron beam source 731 toward the substrate SUB and suppress an increase in the substrate temperature, and to reduce the number of electrons that directly collide with the organic EL element. Can be reduced. For this reason, damage to the organic EL element can be avoided.

  In this manufacturing apparatus, the substrate SUB is integrated with a mask 705 aligned with the main surface on which the effective portion 106 is formed. This mask 705 is held by a mask holder 706. The mask 705 is often formed of a metal material, and is disposed close to the substrate SUB (may be disposed in close contact with the substrate SUB). Therefore, it is effective to ground the mask 705 in order to absorb unnecessary electrons.

  Thus, even in a manufacturing apparatus equipped with an electron beam source applicable to the electron beam curing method, it was emitted from the electron beam source by providing a conductive grid between the electron beam source and the substrate. Overheating of the substrate due to electrons and collision with the display element can be prevented. Therefore, it is possible to reduce damage to the display element already formed on the substrate.

  In order to further suppress the increase in the substrate temperature, a heat insulating plate 703 as shown in FIG. 5 may be provided, or a cooling mechanism is provided in the heat insulating plate 703, the mask holder 706, and the substrate holder 702 to mount the substrate. It may be actively cooled.

  In addition, the conductive grid 732 desirably has an absorbed dose of an electron beam irradiated toward the main surface of the substrate of 200 J / g or less. As described above, by controlling the absorbed dose of the electron beam irradiated during the curing of the monomer to form the buffer layer so as to be a predetermined value or less, damage to the element can be reduced.

  As described above, the effective portion formed on the main surface of the substrate is covered with a sealing body having a structure in which at least two buffer layers and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer. It has been broken. For this reason, it is possible to reliably cover the display element formed in the effective portion, and it is possible to ensure high shielding against external impurities and outside air, and maintain good display performance over a long period of time. be able to.

  Further, when manufacturing a sealing body having such a structure, an excessive rise in the substrate temperature is suppressed using a heat insulating plate, and electrons that are directed toward the main surface of the substrate are absorbed using a conductive grid. It is possible to reduce damage caused by heat and collision of electrons to the display element formed in the effective portion of the substrate main surface.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the spirit of the invention in the stage of implementation. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

  In each of the embodiments described above, the case where the buffer layer constituting the sealing body is two layers and the barrier layer is three layers has been described as an example. However, the combination of the number of layers is limited to this example as long as each layer is two or more layers. Is not to be done. In the case where the sealing body is formed by laminating ten or more thin films, the number of steps is too large and the productivity is lowered. For this reason, the number of thin film layers to be laminated is 2 or more and less than 10 layers, and preferably 3 to 5 layers.

FIG. 1 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing the structure of one pixel of the organic EL display device shown in FIG. (A) thru | or (c) of FIG. 3 is a figure for demonstrating the manufacturing process of a sealing body. FIG. 4 is a diagram schematically showing a configuration of a manufacturing apparatus for manufacturing a sealing body. FIG. 5 is a diagram schematically showing a configuration of a manufacturing apparatus for forming a barrier layer. FIG. 6 is a diagram schematically showing another configuration of the manufacturing apparatus for forming the barrier layer. FIG. 7 is a diagram schematically showing a configuration of a manufacturing apparatus for forming the buffer layer. FIG. 8 is a diagram schematically showing the configuration of a manufacturing apparatus for forming the buffer layer.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL display apparatus, 10 ... Pixel switch, 20 ... Drive transistor, 30 ... Storage capacitor element, 40 ... Organic EL element, 60 ... 1st electrode, 64 ... Organic active layer, 66 ... 2nd electrode, 70 ... Partition , 100 ... Array substrate, 106 ... Effective portion, 120 ... Wiring substrate, 200 ... Sealing member, 300 ... Sealing body, 311, 312 ... Buffer layer, 320, 321, 322 ... Barrier layer, 601 ... First chamber, 602 ... Second chamber, 603 ... Third chamber, 701 ... Housing unit, 702 ... Substrate holder, 703 ... Heat shield, 707 ... Electron beam source, 711 ... Grid, 722 ... Heat shield, 731 ... Electron beam source, 732 ... Grid, PX (R, G, B) ... Pixel, SUB ... Substrate, S ... Material source

Claims (10)

An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An accommodating portion for accommodating a material source for forming the buffer layer or the barrier layer;
A substrate holder for holding the substrate having the effective portion in a state in which a main surface thereof faces the accommodating portion;
A heat insulating plate disposed between the housing portion and the substrate held by the substrate holder;
A manufacturing apparatus comprising:   The display device manufacturing apparatus according to claim 1, wherein the heat insulating plate includes a cooling mechanism.   The apparatus for manufacturing a display device according to claim 1, further comprising a heating source for heating the material source accommodated in the accommodating portion. An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An accommodating portion for accommodating a material source for forming the barrier layer;
A substrate holder for holding the substrate having the effective portion in a state in which a main surface thereof faces the accommodating portion;
A conductive grid disposed between the housing portion and the substrate held by the substrate holder and grounded;
A manufacturing apparatus comprising:   The display device manufacturing apparatus according to claim 1, further comprising an electron beam source that irradiates an electron beam to the material source housed in the housing portion. An effective portion that is formed on the main surface of the substrate and includes a plurality of pixels for displaying an image;
A sealing body that is arranged so as to cover at least the effective portion of the main surface of the substrate and has a structure in which a buffer layer and a barrier layer that covers each buffer layer are stacked in a pattern larger than the buffer layer; A display device manufacturing apparatus comprising:
An electron beam source for irradiating an electron beam;
A substrate holder for holding the substrate in a state where a main surface on which a material source for forming the buffer layer is formed is opposed to the electron beam source;
A grounded conductive grid disposed between the electron beam source and the substrate held by the substrate holder;
A manufacturing apparatus comprising:   The display device manufacturing apparatus according to claim 4, wherein the grid has an absorbed dose of an electron beam irradiated toward the substrate main surface of 200 J / g or less.   The display device manufacturing apparatus according to claim 1, wherein the barrier layer is formed of a metal material, a metal oxide material, or a ceramic material.   The display device manufacturing apparatus according to claim 1, wherein the buffer layer is formed of a resin material. On the main surface of the substrate, an effective portion having a plurality of pixels for displaying an image is formed,
A manufacturing method of a display device, wherein a sealing body is disposed so as to cover at least the effective portion of a substrate main surface,
The manufacturing process of the sealing body includes:
Forming at least two buffer layers;
Forming a barrier layer that is a larger pattern than the buffer layer and covers each buffer layer,
In the step of forming the buffer layer and the barrier layer, the absorbed dose of the electron beam irradiated toward the main surface of the substrate is set to 200 J / g or less.

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