JP2004327756A - Semiconductor device for ic card, and manufacturing device thereof - Google Patents

Semiconductor device for ic card, and manufacturing device thereof Download PDF

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Publication number
JP2004327756A
JP2004327756A JP2003121002A JP2003121002A JP2004327756A JP 2004327756 A JP2004327756 A JP 2004327756A JP 2003121002 A JP2003121002 A JP 2003121002A JP 2003121002 A JP2003121002 A JP 2003121002A JP 2004327756 A JP2004327756 A JP 2004327756A
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semiconductor chip
wiring board
printed wiring
card
semiconductor device
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Japanese (ja)
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Masataka Nishikawa
昌孝 西川
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for IC cards that is used for IC cards, is thin, and has low packaging cost. <P>SOLUTION: A semiconductor chip 1 is accommodated in a semiconductor chip accommodation section 7 which is formed with an area larger than the size of the semiconductor chip 1 and passes through a base material 2a of a printed-wiring board 2. The electrode pad of the semiconductor chip 1 is electrically connected to an electrode section 6 of the printed-wiring board 2 by wire bonding. A resin 3 seals at least the surface of the semiconductor chip 1, a gap section 7a of a semiconductor chip accommodation section 7, a wire 5 for wire bonding, and a periphery section 6a of the wire bonding on the surface of the printed-wiring board 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、樹脂封止されたＩＣカード用半導体装置及びその製造方法に関する。特に、ＩＣカード用の半導体チップを搭載した半導体装置の組み立て工程において、半導体装置の薄型化を実現するために、薄型化した半導体チップをプリント配線基板に実装し、電気的信号を金やアルミニウム等のワイヤで外部電極に取りだし、その後樹脂封止により取扱い易い半導体装置とするもので、一般的に半導体実装技術として知られる技術分野に関する。
【０００２】
【従来の技術】
近年、鉄道バス等の公共交通期間の定期券や、銀行など金融機関カード、個人認証用カードとして半導体チップを搭載したＩＣカードが実用化されてきている。このようなＩＣカードは、接触式ではＩＣカード用半導体装置の半導体チップ搭載面とは反対面側に電極があり、外部装置であるリーダー・ライター装置と電気的接続可能な端子を有している。また、非接触ＩＣカードの製造には巻き線タイプインレットやエッチングコイルインレットと呼ばれるアンテナからの電磁波を用いて非接触方式にてデータの送受信の可能なものがある。ＩＣカードは、半導体チップを搭載したＩＣカード用半導体装置の一部に設けた端子と、ポリエステル、ポリカーボネート、ポリエチレン・テレフタレート（ＰＥＴ）、または、紙等を主材料とするカード基材に埋設した外部との通信用アンテナとを電気的接続し、ポリエステル，ポリカーボネート，ペットまたは、紙等を主材料にしてラミネートすることで作製する。
【０００３】
ところで、これらのＩＣカードは、利用形態として携行する場合が多く、衣服のポケットや、財布、定期券入れ等に入れ携帯するに場合おいて、薄型化が要求される。ＩＣカード本体は、一般に１．０ｍｍ以下の厚みが携帯し易い厚みであり、ＩＣカードに埋設するＩＣカード用半導体装置は更に薄型化が要求される。また、更に薄型化が要求されるＩＣカードでは、他に各種証明証等として、自動車運転免許証の公的ライセンス証や、旅券・パスポートなどに利用され、０．４ｍｍ以下の厚みの要求がある。
【０００４】
以上の薄型ＩＣカード用半導体装置は、フリップチップ工法と称する、プリント配線基板に直接半導体チップの電気的接続端子上に設けた突起物とを接続する方法にて実装が行われていた。
【０００５】
図１０に示すように、フリップチップ工法では、予めウェハ状態の半導体チップの電極に、銅＋ニッケル＋金等の突起を、電解または無電解メッキ法により形成する方法や、半導体チップ個片にした後に金ワイヤボンド工法を利用したワイヤードバンプ形成法等により形成し、半導体チップの電極に形成された当該突起物２２を、プリント配線基板の所定の端子に、±１０μｍ程度の高精度で位置合わせし、異方性導電性フィルムや、低接続抵抗値を得るための銀粉入りエポキシペーストを用いて接合する。
【０００６】
更に、プリント配線基板上に電気的接続した半導体チップは、エポキシ等の外部環境から保護するための封止材による保護を施している。
【０００７】
また、ＩＣカード用半導体装置の半導体チップを実装する方法として、ワイヤボンディング方式にて半導体チップの電気信号をプリント配線基板に接続がある（下記の特許文献１及び特許文献２参照）。
【０００８】
図１１に示すように、特許文献１及び特許文献２に開示されたＩＣカード用半導体装置の半導体チップの実装方法では、プリント配線基板の半導体チップを搭載する領域がザグリ加工されている場合や、貫通孔が形成されているが、その面積が半導体チップサイズより小さく、プリント配線基板上の半導体チップを搭載するも、半導体装置の厚み寸法が薄くならない方法である。
【０００９】
【特許文献１】
特開平４−１８３９９号公報
【特許文献２】
特開平９−８１７３号公報
【００１０】
【発明が解決しようとする課題】
上述の通り、従来のフリップチップ工法は、半導体チップの表面の電極に突起物を形成するための特殊な設備や、高精度に位置合わせするための設備が必要であるとともに、プリント配線基板に実装するための割れ防止を目的とした補助材料が必要であり、事業としての量産化には、高額設備の導入や技術的ノウハウの蓄積が必要であった。
【００１１】
また、特許文献１及び特許文献２に開示された実装方法では、半導体装置を十分に薄型化できないという問題があった。
【００１２】
本発明は、上記問題点に鑑みてなされたもので、その目的は、ＩＣカード用として薄型のＩＣカード用半導体装置を提供すること、また、半導体実装工法として広く汎用的に用いられているワイヤボンディングを用いて、低製造コストで薄型化が可能なＩＣカード用半導体装置の製造方法を提供することにある。
【００１３】
【課題を解決するための手段】
この目的を達成するための本発明に係るＩＣカード用半導体装置は、半導体チップのチップサイズより大きな面積でプリント配線基板の基材を貫通して形成された半導体チップ収容部に、前記半導体チップを収容し、前記半導体チップの電極パッドと前記プリント配線基板の電極部とをワイヤボンディングで電気的に接続し、少なくとも前記半導体チップの表面、前記半導体チップ収容部の間隙部分、前記ワイヤボンディング用のワイヤ、及び、前記プリント配線基板表面の前記ワイヤボンディングの周辺部を樹脂で封止してなることを特徴とする。
【００１４】
また、この目的を達成するための本発明に係るＩＣカード用半導体装置の製造方法は、半導体チップのチップサイズより大きな面積で基材を貫通して形成された半導体チップ収容部を有するテープ状のプリント配線基板に、表面に接着剤を有するテープ状の絶縁材料を貼り付ける工程と、前記半導体チップ収容部内の前記絶縁材料の表面と、前記半導体チップの裏面とを、前記接着剤を介して接着させて、前記半導体チップを前記半導体チップ収容部に配置する工程と、前記半導体チップの電極パッドと前記プリント配線基板の電極部とをワイヤボンディングで電気的に接続する工程と、少なくとも前記半導体チップの表面、前記半導体チップ収容部の間隙部分、前記ワイヤボンディング用のワイヤ、及び、前記プリント配線基板表面の前記ワイヤボンディングの周辺部を樹脂で封止する工程とを有することを特徴とし、更に好ましくは、前記樹脂で封止する工程後に、加熱処理して前記プリント配線基板と前記テープ状の絶縁材料を分離する工程とを有することを特徴とする。
【００１５】
本発明に係るＩＣカード用半導体装置、及び、その製造方法によれば、半導体実装工法として広く汎用的に用いられているワイヤボンディングにより、半導体チップ表面の電極パッドから金やアルミニウムなどの極細線にて、プリント配線基板上の電極部とを電気的に接続するため、製造コストの高騰を抑制しつつ、プリント配線基板に、半導体チップのチップサイズより大きな面積で基材を貫通して半導体チップ収容部を形成してあるので、そこに収容する半導体チップは、プリント配線基板の厚み寸法だけプリント配線基板内部に埋設していることから、半導体装置の薄型化が可能となる。
【００１６】
【発明の実施の形態】
本発明に係るＩＣカード用半導体装置及びその製造方法（以下、適宜「本発明装置」及び「本発明方法」という。）の実施の形態につき、図面に基づいて説明する。
【００１７】
図１〜図３に、本発明装置の構造を示す断念図及び平面図を示す。本発明装置は、プリント配線基板２の絶縁性の基材２ａを貫通させて形成した半導体チップ収容部７にそれよりチップ面積の小さい半導体チップ１を収容し、半導体チップ１の電極パッドとプリント配線基板２の電極部６とをワイヤボンディングで電気的に接続し、半導体チップ１の表面、半導体チップ収容部７の間隙部分７ａ、ワイヤボンディング用のワイヤ５、及び、プリント配線基板２の表面の前記ワイヤボンディング箇所の周辺部６ａを樹脂３で封止して作製されている。
【００１８】
ここで、図２は、プリント配線基板２の裏面側に半導体チップ１のダイボンディング用の絶縁材料４が残された状態を示しており、図１では、その絶縁材料４が除去された状態の本発明装置を示している。
【００１９】
プリント配線基板２は、絶縁性基材２ａの一方面に、銅箔等の導体が貼られエッチング等によりパターンニングされて導体部が形成されており、導体部の厚みは、８μｍ〜２０μｍで、絶縁性基材２ａと導体部６の厚み合計は５０μｍから１２０μｍ、より好ましくは、５０μｍから１００μｍである。本実施形態では、プリント配線基板２の一例として、絶縁性基材２ａがガラスエポキシ基材で、導体部６の厚みが１２μｍ、合計の厚みが８０μｍの場合を一例とする。
【００２０】
半導体チップ１は、ウェハ製造プロセスでは一般に７００μｍ前後の厚みで取り扱われるが、ＩＣカード用モジュールとしての本発明装置で使用する半導体チップ１の厚さは５０μｍ〜１００μｍ程度まで、ウェハの状態で裏面研磨が施され薄くなっている。本実施形態では、８０μｍ厚にまで裏面研磨したウェハをダイシングして半導体チップ１とした場合を一例とする。
【００２１】
プリント配線基板２には、半導体チップ１を収容するための半導体チップ収容部７が加工されている。この半導体チップ収容部７の寸法は、半導体チップ１のチップサイズのＸ，Ｙ方向の寸法に対し、夫々０．５ｍｍを加算した寸法で、金型によるパンチング加工や、エンドミルと称される回転式切り歯で絶縁性基材２ａを貫通加工して形成される。
【００２２】
次に、半導体チップ収容部７が加工されたプリント配線基板２を用いた本発明方法について説明する。先ず、図２に示したダイボンディング用の絶縁材料４をプリント配線基板２の裏面に貼り付ける工程について説明する。プリント配線基板２の裏面側にガラスエポキシ樹脂、ポリイミド樹脂、アラミド材、及び、ポリエステル樹脂等から選択される樹脂製の表面に薄型接着剤の付いたテープ状絶縁材料４を貼り付ける。図４、図６及び図７に示すように、プリント配線基板２として、テープ状のリール１１に巻き付けた長尺のものを、同様に、絶縁材料４も、テープ状のリール１２に巻き付けた長尺のものを使用する。貼り付け方法は、図７に示すように、プリント配線基板２と絶縁材料４のテープ状材料１０、１３をリール１１、１２に巻き付けた状態から引き出し、ローラー１５で重ね合せ、加熱・圧着し、更に、冷却して、リール１４に巻き取られる。尚、テープ状材料１０、１３の形状は、プリント配線基板２、接着剤を有する絶縁材料４ともに、幅が１ｃｍ〜１０ｃｍ程度、長さが５ｍから１０００ｍの長尺で作製されている。
【００２３】
本実施形態では、図７では図示していないが、半導体チップ１をプリント配線基板２の半導体チップ収容部７に加熱・圧着によりダイボンディングする。ダイボンディングは、プリント配線基板２の半導体チップ収容部７の部分が、絶縁材料４の接着剤が表面側に露出しており、その接着剤により半導体チップ１を絶縁材料４にダイボンディングする。
【００２４】
その後、図５に示すように、ダイボンディング済みの半導体チップ１の電極パッドとプリント配線基板２の電極部６を、直径２０〜３０μｍの金ワイヤまたはアルミニウムワイヤを用いてワイヤボンディングし、両者を電気的に接続する。
【００２５】
次に、ワイヤボンディングされた半導体チップ１、半導体チップ１とプリント配線基板２のワイヤボンディング箇所を、エポキシ樹脂にて封止する。樹脂封止の方法は、印刷方式やポッティング方式による方法、または、金型内で保持したワイヤボンディングされた半導体チップ１とプリント配線基板２のワイヤボンディング箇所にトランスファー方式にて樹脂を注入成型する方法がある。
【００２６】
次に、プリント配線基板４の所定のテスト端子にプロービング端子を接触させ本発明装置の電気的な特性評価を行う。以上のダイボンディング、ワイヤボンディング、樹脂封止、電気的特性評価までの工程を経た後、一旦長尺状態のままリールに巻き取られる。その後、個片分割のため金型等で打ち抜し、ＩＣカード用の半導体モジュールとしての本発明装置が完成する。
【００２７】
更に、本発明装置をＩＣカードにするためには、図８及び図９に示すように、ＩＣカード基材１７に埋設されたアンテナ部１８と本発明装置を、半田または銀ペースト等の導電性接着材にて電気的に接続しＩＣカードが完成する。
【００２８】
ＩＣカード基材には、カード表面にスクリーン印刷、オフセット印刷などの印刷技術により、使途・用途に合わせた外観を得ることになる。
【００２９】
次に、本実施形態における本発明装置の各部の厚さについて説明する。ここで、▲１▼半導体チップ１の厚みｔ１：８０μｍ、▲２▼プリント配線基板２の導体部６を含む厚みｔ２：８０μｍ、▲３▼半導体チップ１のダイボンディング用の絶縁材料４の厚みｔ３：２０μｍ、▲４▼半導体チップ１のワイヤボンディングの高さｔ４（半導体チップ表面よりワイヤ５の頂点まで）：１００μｍ、▲５▼半導体チップ１及びプリント配線基板２のワイヤボンディング箇所の樹脂封止厚みｔ５（半導体チップ１の表面より樹脂頂点まで）：１５０μｍと想定すると、▲１▼〜▲５▼より、図２に示す絶縁材料４を含む本発明装置の断面構造図より、本発明装置の厚さＴは、下記の数１の計算式で算出できる。
【００３０】
【数１】
Ｔ＝ｔ１＋ｔ３＋ｔ５＝８０μｍ＋２０μｍ＋１５０μｍ＝２５０μｍ
【００３１】
ここで、プリント配線基板２の厚みｔ２は、半導体チップ１がプリント配線基板２の半導体チップ収容部７を通して、半導体チップ１を搭載するためのプリント配線基板２に貼り合わせた接着剤付き絶縁材料４にダイボンディングするため本発明装置の厚さＴに実質的に関与しない。また、半導体チップ１のワイヤボンディングの高さｔ４（半導体チップ１の表面よりワイヤ５の頂点まで）は、半導体チップ１とプリント配線基板２のワイヤボンディング箇所の樹脂封止の厚みｔ５（半導体チップ１の表面より樹脂頂点まで）の樹脂封止内に収まるため、本発明装置の厚さＴの計算には計上しなくてよい。
【００３２】
以下に、本発明装置の製造方法についても別実施形態につき説明する。
【００３３】
上記実施形態において、電気的特性評価完了後の本発明装置は、長尺状態であり、ダイボンディング用の絶縁材料が残存した状態であるため、１６５℃〜２００℃の温度範囲で加熱処理を行い、長尺状態のままプリント配線基板２とテープ状の絶縁材料４を分離した後、個片分割のため金型等で打ち抜し、ＩＣカード用の半導体モジュールとしての本発明装置を完成させるようにしてもよい。完成した本発明装置は図１に示す断面構造を呈する。
【００３４】
この結果、上記数１に示す本発明装置の厚みＴの計算式より、絶縁材料４の厚みｔ３を更に減じることができる。つまり、上記寸法例では、２３０μｍの厚さの本発明装置が作製されることになり、更に薄型化される。
【００３５】
【発明の効果】
以上詳細に説明したように、本発明装置及び本発明方法によれば、半導体実装工法として広く汎用的に用いられているワイヤボンディングを用いて、低製造コストで薄型化が可能なＩＣカード用半導体装置が提供できるようになった。
【図面の簡単な説明】
【図１】本発明に係るＩＣカード用半導体装置の一実施形態の断面構造を示す断面図
【図２】本発明に係るＩＣカード用半導体装置の他の実施形態の断面構造を示す断面図
【図３】本発明に係るＩＣカード用半導体装置の一実施形態の平面構造を示す平面図
【図４】本発明に係るＩＣカード用半導体装置に使用するプリント配線基板とその配線パターンの一例を示す図
【図５】本発明に係るＩＣカード用半導体装置が長尺のプリント配線基板上で樹脂封止された状態を示す図
【図６】本発明に係るＩＣカード用半導体装置に使用する長尺のテープ状プリント配線基板、及び、リールに巻かれた状態の一例を示す図
【図７】本発明に係るＩＣカード用半導体装置の製造方法におけるテープ状プリント配線基板にテープ状の絶縁材料を貼り付ける工程を説明する概略図
【図８】本発明に係るＩＣカード用半導体装置とアンテナがＩＣカード基材に埋設された状態を示す概略図
【図９】本発明に係るＩＣカード用半導体装置とアンテナがＩＣカード基材に埋設され相互に接続された状態を示す図８の破線で囲まれた領域の要部拡大図
【図１０】従来のフリップチップ実装方式によるＩＣカード用半導体装置の断面構造の一例を示す断面図
【図１１】従来のワイヤボンド実装方式によるＩＣカード用半導体装置の断面構造の一例を示す断面図
【符号の説明】
１： 半導体チップ
２： プリント配線基板
２ａ： プリント配線基板の絶縁性基材
３： 半導体チップ、ワイヤ、プリント配線基板のワイヤボンディング箇所等を封止する樹脂
４： 半導体チップをダイボンディングするための絶縁材料
５： ワイヤ
６： プリント配線基板の導体部
６ａ： プリント配線基板表面のワイヤボンディング箇所の周辺部
７： 半導体チップ収容部
７ａ： 半導体チップ収容部の間隙部分（半導体チップの周囲に存在する）
８： 長尺のテープ状プリント配線基板の搬送用孔（スプロケットホール）
９： モジュールの外形切断部
１０： 長尺のテープ状プリント配線基板
１１： 長尺のテープ状プリント配線基板用リール
１２： 半導体チップをダイボンディングするためのテープ状絶縁材料用リール
１３： 半導体チップをダイボンディングするための長尺のテープ状絶縁材料
１４： 巻き取り用リール
１５： 加熱加圧ローラー
１６： ローラー
１７： ＩＣカード基材
１８： 外部通信用アンテナ
１９： 本発明に係るＩＣカード用半導体装置（ＩＣカード用モジュール）
２０： 外部通信用アンテナとの接続用端子
２１： 半導体チップとプリント配線基板間の充填材
２２： 半導体チップ上の突起電極
２３： 半導体チップを搭載するために形成されたプリント配線基板の座グリ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a resin-sealed IC card semiconductor device and a method of manufacturing the same. In particular, in the process of assembling a semiconductor device on which a semiconductor chip for an IC card is mounted, in order to reduce the thickness of the semiconductor device, the thinned semiconductor chip is mounted on a printed wiring board, and an electric signal is transmitted to gold or aluminum. The present invention relates to a technical field generally known as a semiconductor mounting technique, in which a semiconductor device is taken out to an external electrode with a wire and then easily handled by resin sealing.
[0002]
[Prior art]
2. Description of the Related Art In recent years, commuter passes for public transportation such as railway buses, financial institution cards such as banks, and IC cards equipped with semiconductor chips as personal authentication cards have been put to practical use. Such an IC card has an electrode on the side opposite to the semiconductor chip mounting surface of the IC card semiconductor device in the contact type, and has terminals that can be electrically connected to a reader / writer device as an external device. . In the production of non-contact IC cards, there is a non-contact IC card capable of transmitting and receiving data in a non-contact manner using an electromagnetic wave from an antenna called a winding type inlet or an etching coil inlet. An IC card has a terminal provided on a part of a semiconductor device for an IC card on which a semiconductor chip is mounted, and an external device embedded in a card base mainly made of polyester, polycarbonate, polyethylene terephthalate (PET), or paper. It is manufactured by electrically connecting the antenna for communication with the antenna and laminating the main material using polyester, polycarbonate, pet, paper or the like.
[0003]
By the way, these IC cards are often carried as a usage form, and are required to be reduced in thickness when they are carried in clothes pockets, wallets, commuter passes, and the like. Generally, the IC card body has a thickness of 1.0 mm or less which is easy to carry, and the IC card semiconductor device embedded in the IC card is required to be thinner. In addition, IC cards that are required to be further thinner are used for various licenses, such as public licenses of automobile driver's licenses, passports, passports, etc., and require a thickness of 0.4 mm or less. .
[0004]
The above-described semiconductor device for a thin IC card has been mounted by a method called a flip-chip method, in which a printed wiring board is directly connected to a projection provided on an electrical connection terminal of a semiconductor chip.
[0005]
As shown in FIG. 10, in the flip-chip method, a method of forming protrusions such as copper + nickel + gold on electrodes of a semiconductor chip in a wafer state in advance by electrolytic or electroless plating, or a semiconductor chip piece is used. Later, the bumps 22 formed on the electrodes of the semiconductor chip are formed with a wire bump forming method using a gold wire bonding method, and the protrusions 22 are aligned with predetermined terminals of the printed wiring board with high accuracy of about ± 10 μm. And bonding using an anisotropic conductive film or an epoxy paste containing silver powder for obtaining a low connection resistance value.
[0006]
Further, the semiconductor chip electrically connected to the printed wiring board is protected by a sealing material for protecting the semiconductor chip from an external environment such as epoxy.
[0007]
As a method for mounting a semiconductor chip of a semiconductor device for an IC card, an electric signal of the semiconductor chip is connected to a printed wiring board by a wire bonding method (see Patent Documents 1 and 2 below).
[0008]
As shown in FIG. 11, in the method of mounting a semiconductor chip of a semiconductor device for an IC card disclosed in Patent Documents 1 and 2, when a region where a semiconductor chip is mounted on a printed wiring board is counterbored, Although the through hole is formed, the area of the through hole is smaller than the size of the semiconductor chip, and the thickness of the semiconductor device is not reduced even though the semiconductor chip is mounted on the printed wiring board.
[0009]
[Patent Document 1]
JP-A-4-18399 [Patent Document 2]
Japanese Patent Application Laid-Open No. 9-8173
[Problems to be solved by the invention]
As described above, the conventional flip-chip method requires special equipment for forming protrusions on the electrodes on the surface of the semiconductor chip, equipment for high-precision alignment, and mounting on a printed circuit board. Auxiliary materials were needed to prevent cracking, and mass production as a business required the introduction of expensive equipment and the accumulation of technical know-how.
[0011]
In addition, the mounting methods disclosed in Patent Literature 1 and Patent Literature 2 have a problem that the semiconductor device cannot be made sufficiently thin.
[0012]
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a thin IC card semiconductor device for an IC card, and a wire widely used widely as a semiconductor mounting method. An object of the present invention is to provide a method of manufacturing a semiconductor device for an IC card which can be made thin at a low manufacturing cost by using bonding.
[0013]
[Means for Solving the Problems]
In order to achieve this object, a semiconductor device for an IC card according to the present invention includes the semiconductor chip in a semiconductor chip accommodating portion formed through a substrate of a printed wiring board with an area larger than the chip size of the semiconductor chip. The electrode pads of the semiconductor chip and the electrode portions of the printed wiring board are electrically connected to each other by wire bonding, and at least a surface of the semiconductor chip, a gap portion of the semiconductor chip housing portion, and a wire for wire bonding. And a peripheral portion of the wire bonding on the surface of the printed wiring board is sealed with a resin.
[0014]
Further, in order to achieve this object, a method of manufacturing a semiconductor device for an IC card according to the present invention is directed to a tape-shaped semiconductor device having a semiconductor chip accommodating portion formed through a base material with an area larger than the chip size of a semiconductor chip. A step of attaching a tape-shaped insulating material having an adhesive on the surface to the printed wiring board, and bonding the front surface of the insulating material in the semiconductor chip housing portion and the back surface of the semiconductor chip via the adhesive. Disposing the semiconductor chip in the semiconductor chip receiving portion; electrically connecting an electrode pad of the semiconductor chip to an electrode portion of the printed wiring board by wire bonding; Surface, a gap portion of the semiconductor chip housing portion, the wire for wire bonding, and the surface of the printed wiring board. Sealing the peripheral portion of the ear bonding with a resin, more preferably, after the step of sealing with the resin, heat-treating to separate the printed wiring board and the tape-shaped insulating material. And a step of performing
[0015]
According to the semiconductor device for an IC card according to the present invention and the method for manufacturing the same, wire bonding widely used as a semiconductor mounting method is widely used to convert an electrode pad on the surface of a semiconductor chip to a fine wire such as gold or aluminum. In order to electrically connect the electrodes on the printed circuit board, the semiconductor chip is accommodated in the printed circuit board by penetrating the base material with an area larger than the chip size of the semiconductor chip while suppressing a rise in manufacturing cost. Since the portion is formed, the semiconductor chip accommodated therein is embedded within the printed wiring board by the thickness of the printed wiring board, so that the semiconductor device can be made thinner.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of a semiconductor device for an IC card according to the present invention and a method for manufacturing the same (hereinafter, appropriately referred to as “the present invention device” and “the present invention method”) will be described with reference to the drawings.
[0017]
1 to 3 show an abandoned view and a plan view showing the structure of the device of the present invention. The device of the present invention accommodates a semiconductor chip 1 having a smaller chip area in a semiconductor chip accommodating portion 7 formed by penetrating an insulating base material 2a of a printed wiring board 2, and connects an electrode pad of the semiconductor chip 1 with a printed wiring. The electrode portion 6 of the substrate 2 is electrically connected by wire bonding, and the surface of the semiconductor chip 1, the gap portion 7a of the semiconductor chip housing portion 7, the wire 5 for wire bonding, and the surface of the printed wiring board 2 It is manufactured by sealing the peripheral portion 6a of the wire bonding portion with the resin 3.
[0018]
Here, FIG. 2 shows a state where the insulating material 4 for die bonding of the semiconductor chip 1 is left on the back surface side of the printed wiring board 2, and FIG. 1 shows a state where the insulating material 4 is removed. 1 shows the device of the invention.
[0019]
The printed wiring board 2 has a conductor portion formed on one surface of an insulating base material 2a by pasting a conductor such as a copper foil and patterning by etching or the like. The conductor portion has a thickness of 8 μm to 20 μm. The total thickness of the insulating substrate 2a and the conductor 6 is 50 μm to 120 μm, and more preferably 50 μm to 100 μm. In the present embodiment, as an example of the printed wiring board 2, a case where the insulating base material 2a is a glass epoxy base material, the thickness of the conductor portion 6 is 12 μm, and the total thickness is 80 μm is taken as an example.
[0020]
The semiconductor chip 1 is generally handled with a thickness of about 700 μm in the wafer manufacturing process. However, the thickness of the semiconductor chip 1 used in the device of the present invention as an IC card module is about 50 μm to 100 μm. It is thinned. In the present embodiment, an example is given in which the semiconductor chip 1 is obtained by dicing a wafer whose back surface has been polished to a thickness of 80 μm.
[0021]
A semiconductor chip housing portion 7 for housing the semiconductor chip 1 is formed on the printed wiring board 2. The size of the semiconductor chip housing portion 7 is a size obtained by adding 0.5 mm each to the size of the semiconductor chip 1 in the X and Y directions, and is a punching process using a die or a rotary type called an end mill. It is formed by cutting through the insulating base material 2a with the cutting teeth.
[0022]
Next, the method of the present invention using the printed wiring board 2 in which the semiconductor chip housing 7 is processed will be described. First, the step of attaching the insulating material 4 for die bonding shown in FIG. 2 to the back surface of the printed wiring board 2 will be described. A tape-shaped insulating material 4 with a thin adhesive is adhered to a resin surface selected from a glass epoxy resin, a polyimide resin, an aramid material, a polyester resin and the like on the back surface side of the printed wiring board 2. As shown in FIGS. 4, 6 and 7, the printed wiring board 2 is a long one wound around a tape-shaped reel 11, and similarly, the insulating material 4 is also a long one wound around a tape-shaped reel 12. Use the one of the scale. As shown in FIG. 7, the bonding method is as follows: the printed wiring board 2 and the tape-shaped materials 10 and 13 of the insulating material 4 are pulled out from the state wound on the reels 11 and 12, overlapped by the roller 15, and heated and pressed. Further, it is cooled and wound on a reel 14. In addition, the shape of the tape-shaped materials 10 and 13 is such that the printed wiring board 2 and the insulating material 4 having an adhesive have a width of about 1 cm to 10 cm and a length of 5 m to 1000 m.
[0023]
In the present embodiment, although not shown in FIG. 7, the semiconductor chip 1 is die-bonded to the semiconductor chip housing portion 7 of the printed wiring board 2 by heating and pressing. In the die bonding, the adhesive of the insulating material 4 is exposed on the surface side of the semiconductor chip housing portion 7 of the printed wiring board 2, and the semiconductor chip 1 is die-bonded to the insulating material 4 by the adhesive.
[0024]
Thereafter, as shown in FIG. 5, the electrode pads of the die-bonded semiconductor chip 1 and the electrode portions 6 of the printed wiring board 2 are wire-bonded using a gold wire or an aluminum wire having a diameter of 20 to 30 μm, and both are electrically connected. Connection.
[0025]
Next, the wire-bonded semiconductor chip 1 and the wire-bonded portions between the semiconductor chip 1 and the printed wiring board 2 are sealed with epoxy resin. The method of resin sealing is a method by a printing method or a potting method, or a method of injecting and molding a resin by a transfer method into a wire bonding portion between a wire-bonded semiconductor chip 1 and a printed wiring board 2 held in a mold. There is.
[0026]
Next, a probing terminal is brought into contact with a predetermined test terminal of the printed wiring board 4 to evaluate the electrical characteristics of the device of the present invention. After going through the above-described steps of die bonding, wire bonding, resin sealing, and evaluation of electrical characteristics, it is once wound around a reel in a long state. After that, it is punched out with a mold or the like for dividing into individual pieces, thereby completing the device of the present invention as a semiconductor module for an IC card.
[0027]
Further, in order to make the device of the present invention an IC card, as shown in FIGS. 8 and 9, the antenna portion 18 embedded in the IC card base 17 and the device of the present invention are connected to a conductive material such as solder or silver paste. The IC card is completed by electrically connecting with an adhesive.
[0028]
On the IC card base material, an appearance suitable for the intended use is obtained by a printing technique such as screen printing or offset printing on the card surface.
[0029]
Next, the thickness of each part of the device of the present invention in the present embodiment will be described. Here, (1) the thickness t1: 80 μm of the semiconductor chip 1, (2) the thickness t2 including the conductor portion 6 of the printed wiring board 2: 80 μm, and (3) the thickness t3 of the insulating material 4 for die bonding of the semiconductor chip 1. : 20 μm, (4) Height t4 of the wire bonding of the semiconductor chip 1 (from the surface of the semiconductor chip to the top of the wire 5): 100 μm, (5) Resin sealing thickness of the wire bonding portion of the semiconductor chip 1 and the printed wiring board 2 t5 (from the surface of the semiconductor chip 1 to the top of the resin): Assuming 150 μm, from (1) to (5), the thickness of the device of the present invention is obtained from the sectional structural view of the device of the present invention including the insulating material 4 shown in FIG. The length T can be calculated by the following equation (1).
[0030]
(Equation 1)
T = t1 + t3 + t5 = 80 μm + 20 μm + 150 μm = 250 μm
[0031]
Here, the thickness t2 of the printed wiring board 2 is determined by the thickness of the insulating material 4 with the adhesive which is attached to the printed wiring board 2 for mounting the semiconductor chip 1 through the semiconductor chip receiving portion 7 of the printed wiring board 2. Does not substantially affect the thickness T of the device of the present invention. The height t4 of the wire bonding of the semiconductor chip 1 (from the surface of the semiconductor chip 1 to the apex of the wire 5) is the thickness t5 of the resin sealing at the wire bonding portion between the semiconductor chip 1 and the printed wiring board 2 (the semiconductor chip 1). (From the surface to the top of the resin) in the resin sealing, it is not necessary to calculate the thickness T of the device of the present invention.
[0032]
Hereinafter, a method for manufacturing the device of the present invention will be described with reference to another embodiment.
[0033]
In the above embodiment, the device of the present invention after the completion of the evaluation of the electrical characteristics is in a long state, in which the insulating material for die bonding remains, so that the heat treatment is performed in a temperature range of 165 ° C to 200 ° C. After the printed wiring board 2 and the tape-shaped insulating material 4 are separated in a long state, they are punched out with a mold or the like for dividing into individual pieces, thereby completing the device of the present invention as a semiconductor module for an IC card. It may be. The completed device of the present invention has the sectional structure shown in FIG.
[0034]
As a result, the thickness t3 of the insulating material 4 can be further reduced from the equation for calculating the thickness T of the device of the present invention shown in the above equation (1). In other words, in the above example of dimensions, the device of the present invention having a thickness of 230 μm is manufactured, and the thickness is further reduced.
[0035]
【The invention's effect】
As described above in detail, according to the apparatus and the method of the present invention, a semiconductor for an IC card which can be thinned at a low manufacturing cost by using wire bonding widely used widely as a semiconductor mounting method. Equipment can now be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a cross-sectional structure of an embodiment of a semiconductor device for an IC card according to the present invention. FIG. 2 is a cross-sectional view illustrating a cross-sectional structure of another embodiment of the semiconductor device for an IC card according to the present invention. FIG. 3 is a plan view showing the planar structure of one embodiment of the semiconductor device for an IC card according to the present invention. FIG. 4 shows an example of a printed wiring board used for the semiconductor device for an IC card according to the present invention and its wiring pattern. FIG. 5 is a view showing a state in which the semiconductor device for an IC card according to the present invention is resin-sealed on a long printed wiring board. FIG. 6 is a long view used for the semiconductor device for an IC card according to the present invention. FIG. 7 is a view showing an example of a tape-shaped printed wiring board of FIG. 7 and a state wound on a reel. wear FIG. 8 is a schematic diagram illustrating the process of the present invention. FIG. 8 is a schematic diagram showing a state in which the IC card semiconductor device and the antenna according to the present invention are embedded in the IC card base material. FIG. 10 is an enlarged view of a main part of a region surrounded by a broken line in FIG. 8 showing a state in which is embedded in the IC card base material and connected to each other. FIG. 10 is a sectional view of a conventional flip-chip mounting semiconductor device for IC card. FIG. 11 is a cross-sectional view showing an example. FIG. 11 is a cross-sectional view showing an example of a cross-sectional structure of a semiconductor device for an IC card using a conventional wire bond mounting method.
1: Semiconductor chip 2: Printed wiring board 2a: Insulating base material of printed wiring board 3: Resin for sealing semiconductor chips, wires, wire bonding parts of printed wiring board, etc. 4: Insulation for die bonding of semiconductor chip Material 5: Wire 6: Conductor portion 6a of printed wiring board: Peripheral portion of wire bonding portion on printed wiring board surface 7: Semiconductor chip housing portion 7a: Gap portion of semiconductor chip housing portion (present around semiconductor chip)
8: Hole for transporting long tape-shaped printed wiring board (sprocket hole)
9: External cutting section of module 10: Long tape-shaped printed wiring board 11: Reel for long tape-shaped printed wiring board 12: Reel for tape-shaped insulating material for die-bonding semiconductor chip 13: Semiconductor chip Long tape-shaped insulating material 14 for die bonding: Winding reel 15: Heating / pressing roller 16: Roller 17: IC card substrate 18: External communication antenna 19: Semiconductor device for IC card according to the present invention (IC card module)
20: Terminal for connection with an external communication antenna 21: Filler between the semiconductor chip and the printed wiring board 22: Protruding electrode 23 on the semiconductor chip 23: Countersink of the printed wiring board formed for mounting the semiconductor chip

Claims (9)

半導体チップのチップサイズより大きな面積でプリント配線基板の基材を貫通して形成された半導体チップ収容部に、前記半導体チップを収容し、
前記半導体チップの電極パッドと前記プリント配線基板の電極部とをワイヤボンディングで電気的に接続し、
少なくとも前記半導体チップの表面、前記半導体チップ収容部の間隙部分、前記ワイヤボンディング用のワイヤ、及び、前記プリント配線基板表面の前記ワイヤボンディングの周辺部を樹脂で封止してなることを特徴とするＩＣカード用半導体装置。The semiconductor chip is housed in a semiconductor chip housing portion formed by penetrating the base material of the printed wiring board with an area larger than the chip size of the semiconductor chip,
Electrically connecting the electrode pads of the semiconductor chip and the electrode portions of the printed wiring board by wire bonding,
At least a surface of the semiconductor chip, a gap portion of the semiconductor chip housing portion, a wire for wire bonding, and a peripheral portion of the wire bonding on a surface of the printed wiring board are sealed with resin. Semiconductor device for IC card. 前記半導体チップの厚さは、５０μｍから１００μｍであることを特徴とする請求項１に記載のＩＣカード用半導体装置。2. The semiconductor device for an IC card according to claim 1, wherein the thickness of the semiconductor chip is 50 μm to 100 μm. 前記電極部を含む前記プリント配線基板の厚みが５０μｍから１２０μｍであり、前記樹脂の前記半導体チップ表面からの厚みが１００μｍから１５０μｍであることを特徴とする請求項１または２に記載のＩＣカード用半導体装置。3. The IC card according to claim 1, wherein a thickness of the printed wiring board including the electrode portion is 50 μm to 120 μm, and a thickness of the resin from the surface of the semiconductor chip is 100 μm to 150 μm. 4. Semiconductor device. 前記プリント配線基板は、ガラスエポキシ樹脂、ポリイミド樹脂、アラミド材、及び、ポリエステル樹脂の何れか１つを基材として使用していることを特徴とする請求項１〜３の何れか１項に記載のＩＣカード用半導体装置。The said printed wiring board uses any one of glass epoxy resin, a polyimide resin, an aramid material, and a polyester resin as a base material, The Claim 1 characterized by the above-mentioned. Semiconductor device for an IC card. 半導体チップのチップサイズより大きな面積で基材を貫通して形成された半導体チップ収容部を有するテープ状のプリント配線基板に、表面に接着剤を有するテープ状の絶縁材料を貼り付ける工程と、
前記半導体チップ収容部内の前記絶縁材料の表面と、前記半導体チップの裏面とを、前記接着剤を介して接着させて、前記半導体チップを前記半導体チップ収容部に配置する工程と、
前記半導体チップの電極パッドと前記プリント配線基板の電極部とをワイヤボンディングで電気的に接続する工程と、
少なくとも前記半導体チップの表面、前記半導体チップ収容部の間隙部分、前記ワイヤボンディング用のワイヤ、及び、前記プリント配線基板表面の前記ワイヤボンディングの周辺部を樹脂で封止する工程と、を有することを特徴とするＩＣカード用半導体装置の製造方法。Affixing a tape-shaped insulating material having an adhesive on the surface thereof to a tape-shaped printed wiring board having a semiconductor chip accommodating portion formed through the base material with an area larger than the chip size of the semiconductor chip,
A step of bonding the front surface of the insulating material in the semiconductor chip housing portion and the back surface of the semiconductor chip via the adhesive, and disposing the semiconductor chip in the semiconductor chip housing portion;
Electrically connecting the electrode pads of the semiconductor chip and the electrode portions of the printed wiring board by wire bonding,
Sealing at least a surface of the semiconductor chip, a gap portion of the semiconductor chip housing portion, the wire for wire bonding, and a peripheral portion of the wire bonding on the surface of the printed wiring board with resin. A method for manufacturing a semiconductor device for an IC card. 前記接着剤を有するテープ状の絶縁材料は、ガラスエポキシ樹脂、ポリイミド樹脂、アラミド材、及び、ポリエステル樹脂の何れか１つを使用することを特徴とする請求項５に記載のＩＣカード用半導体装置の製造方法。6. The semiconductor device for an IC card according to claim 5, wherein the tape-shaped insulating material having the adhesive is any one of a glass epoxy resin, a polyimide resin, an aramid material, and a polyester resin. Manufacturing method. 前記樹脂で封止する工程後に、加熱処理して前記プリント配線基板と前記テープ状の絶縁材料を分離する工程を有することを特徴とする請求項５または６に記載のＩＣカード用半導体装置の製造方法。7. The method of manufacturing a semiconductor device for an IC card according to claim 5, further comprising, after the step of sealing with the resin, a step of heating to separate the printed wiring board and the tape-shaped insulating material. Method. 前記加熱処理は１６５℃〜２００℃の範囲で行うことを特徴とする請求項７に記載のＩＣカード用半導体装置の製造方法。The method according to claim 7, wherein the heat treatment is performed at a temperature in a range of 165 ° C. to 200 ° C. 9. 前記テープ状のプリント配線基板と前記絶縁材料は、幅が１ｃｍ〜１０ｃｍ程度で５ｍから１０００ｍの長尺で作製されていることを特徴とする請求項５〜８の何れか１項に記載のＩＣカード用半導体装置の製造方法。The IC according to any one of claims 5 to 8, wherein the tape-shaped printed wiring board and the insulating material have a width of about 1 cm to 10 cm and a length of 5 m to 1000 m. A method for manufacturing a semiconductor device for a card.
JP2003121002A 2003-04-25 2003-04-25 Semiconductor device for ic card, and manufacturing device thereof Pending JP2004327756A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719973B1 (en) 2005-12-22 2007-05-18 주식회사 알에프링크 Radio frequency idemtification tag with connector protecter
JP2012091243A (en) * 2010-10-25 2012-05-17 Dainippon Printing Co Ltd Mems device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719973B1 (en) 2005-12-22 2007-05-18 주식회사 알에프링크 Radio frequency idemtification tag with connector protecter
JP2012091243A (en) * 2010-10-25 2012-05-17 Dainippon Printing Co Ltd Mems device and method for manufacturing the same

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