ID25549A - Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile - Google Patents
Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labileInfo
- Publication number
- ID25549A ID25549A IDW20000568A ID20000568A ID25549A ID 25549 A ID25549 A ID 25549A ID W20000568 A IDW20000568 A ID W20000568A ID 20000568 A ID20000568 A ID 20000568A ID 25549 A ID25549 A ID 25549A
- Authority
- ID
- Indonesia
- Prior art keywords
- polymer
- composition
- light resistance
- containing polymeric
- resistance containing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
- C07D487/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
- C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92890097A | 1997-09-12 | 1997-09-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
ID25549A true ID25549A (id) | 2000-10-12 |
Family
ID=25456971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDW20000568A ID25549A (id) | 1997-09-12 | 1998-09-03 | Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP1021750A1 (id) |
JP (1) | JP4416941B2 (id) |
KR (1) | KR100572899B1 (id) |
CN (1) | CN1251021C (id) |
AU (1) | AU747516C (id) |
HK (1) | HK1030992A1 (id) |
ID (1) | ID25549A (id) |
MY (1) | MY123980A (id) |
RU (1) | RU2199773C2 (id) |
TW (1) | TWI235285B (id) |
WO (1) | WO1999014635A1 (id) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002504573A (ja) * | 1998-02-23 | 2002-02-12 | ザ ビー.エフ.グッドリッチ カンパニー | 耐腐食性が高められた多環式レジスト組成物 |
JP5095048B2 (ja) * | 1999-11-15 | 2012-12-12 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
EP1130468A3 (en) * | 2000-02-25 | 2003-07-30 | Shipley Company LLC | Polymer and photoresist compositions |
US6531627B2 (en) * | 2000-04-27 | 2003-03-11 | Shin-Etsu Chemical Co., Ltd. | Ester compounds, polymers, resist compositions and patterning process |
JP3997382B2 (ja) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | 脂環構造を有する新規エステル化合物及びその製造方法 |
US6566038B2 (en) * | 2000-04-28 | 2003-05-20 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
JP3997381B2 (ja) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | 脂環構造を有する新規エステル化合物及びその製造方法 |
JP4544389B2 (ja) * | 2000-04-28 | 2010-09-15 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4626736B2 (ja) * | 2000-10-04 | 2011-02-09 | Jsr株式会社 | 環状オレフィン系共重合体を含む光学透明材料および液晶表示基板材料 |
KR100555287B1 (ko) * | 2001-01-17 | 2006-03-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 에테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법 |
CN100386357C (zh) * | 2002-04-08 | 2008-05-07 | 日本瑞翁株式会社 | 基于降冰片烯的开环聚合物,降冰片烯开环聚合物的加氢产物及它们的制备方法 |
KR100526403B1 (ko) | 2002-07-10 | 2005-11-08 | 주식회사 엘지화학 | 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법 |
CN100334117C (zh) | 2002-07-10 | 2007-08-29 | Lg化学株式会社 | 制备含有酯或乙酰功能基团的降冰片烯基加成聚合物的方法 |
JP4018101B2 (ja) * | 2002-07-10 | 2007-12-05 | エルジ・ケム・リミテッド | ノルボルネン−エステル系付加重合体およびその製造方法 |
US7989571B2 (en) | 2002-07-10 | 2011-08-02 | Lg Chem, Ltd. | Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer |
US7422836B2 (en) * | 2003-02-20 | 2008-09-09 | Promerus Llc | Dissolution rate modifiers for photoresist compositions |
EP1686139A4 (en) * | 2003-11-18 | 2010-08-25 | Jsr Corp | NEW (CO) POLYMER, METHOD OF MANUFACTURING THEREOF AND METHOD FOR PRODUCING CARBOXYLATED (CO) POLYMER |
JP2006100563A (ja) * | 2004-09-29 | 2006-04-13 | Sumitomo Bakelite Co Ltd | 半導体装置 |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
US7985534B2 (en) | 2007-05-15 | 2011-07-26 | Fujifilm Corporation | Pattern forming method |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
KR101457927B1 (ko) | 2007-06-12 | 2014-11-07 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
JP5332883B2 (ja) * | 2009-04-30 | 2013-11-06 | 住友ベークライト株式会社 | 感光性組成物、光導波路、光配線、光電気混載基板、電子機器、および光導波路の形成方法 |
JP6459192B2 (ja) * | 2014-03-20 | 2019-01-30 | 住友ベークライト株式会社 | 感光性樹脂組成物 |
KR102324819B1 (ko) | 2014-12-12 | 2021-11-11 | 삼성전자주식회사 | 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법 |
KR101746789B1 (ko) | 2014-12-18 | 2017-06-13 | 주식회사 엘지화학 | 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막 |
GB201522304D0 (en) | 2015-12-17 | 2016-02-03 | Mars Inc | Food product for reducing muscle breakdown |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4106943A (en) * | 1973-09-27 | 1978-08-15 | Japan Synthetic Rubber Co., Ltd. | Photosensitive cross-linkable azide containing polymeric composition |
US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide |
JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
DE69733469T2 (de) * | 1996-03-07 | 2006-03-23 | Sumitomo Bakelite Co. Ltd. | Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende |
KR100261022B1 (ko) * | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
-
1998
- 1998-09-03 ID IDW20000568A patent/ID25549A/id unknown
- 1998-09-03 AU AU92199/98A patent/AU747516C/en not_active Ceased
- 1998-09-03 WO PCT/US1998/018353 patent/WO1999014635A1/en not_active Application Discontinuation
- 1998-09-03 JP JP2000512109A patent/JP4416941B2/ja not_active Expired - Fee Related
- 1998-09-03 RU RU2000109327/04A patent/RU2199773C2/ru not_active IP Right Cessation
- 1998-09-03 CN CNB988089661A patent/CN1251021C/zh not_active Expired - Fee Related
- 1998-09-03 KR KR1020007002642A patent/KR100572899B1/ko not_active IP Right Cessation
- 1998-09-03 EP EP98944729A patent/EP1021750A1/en not_active Withdrawn
- 1998-09-10 MY MYPI98004156A patent/MY123980A/en unknown
- 1998-10-23 TW TW087115292A patent/TWI235285B/zh not_active IP Right Cessation
-
2001
- 2001-03-12 HK HK01101755A patent/HK1030992A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100572899B1 (ko) | 2006-04-24 |
HK1030992A1 (en) | 2001-05-25 |
RU2199773C2 (ru) | 2003-02-27 |
JP2001516804A (ja) | 2001-10-02 |
AU747516B2 (en) | 2002-05-16 |
TWI235285B (en) | 2005-07-01 |
KR20010023940A (ko) | 2001-03-26 |
AU9219998A (en) | 1999-04-05 |
JP4416941B2 (ja) | 2010-02-17 |
CN1276884A (zh) | 2000-12-13 |
WO1999014635A1 (en) | 1999-03-25 |
CN1251021C (zh) | 2006-04-12 |
MY123980A (en) | 2006-06-30 |
EP1021750A1 (en) | 2000-07-26 |
AU747516C (en) | 2003-07-24 |
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