GB2181456B - Depositing metal films on dielectric substrates - Google Patents
Depositing metal films on dielectric substratesInfo
- Publication number
- GB2181456B GB2181456B GB8622272A GB8622272A GB2181456B GB 2181456 B GB2181456 B GB 2181456B GB 8622272 A GB8622272 A GB 8622272A GB 8622272 A GB8622272 A GB 8622272A GB 2181456 B GB2181456 B GB 2181456B
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal films
- depositing metal
- dielectric substrates
- dielectric
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78498585A | 1985-10-07 | 1985-10-07 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8622272D0 GB8622272D0 (en) | 1986-10-22 |
GB2181456A GB2181456A (en) | 1987-04-23 |
GB2181456B true GB2181456B (en) | 1989-10-25 |
Family
ID=25134142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8622272A Expired GB2181456B (en) | 1985-10-07 | 1986-09-16 | Depositing metal films on dielectric substrates |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS62109973A (en) |
DE (1) | DE3631758A1 (en) |
FR (1) | FR2588277B1 (en) |
GB (1) | GB2181456B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0267730B1 (en) * | 1986-11-10 | 1992-03-18 | AT&T Corp. | Tungsten metallization |
DE3730644A1 (en) * | 1987-09-11 | 1989-03-30 | Baeuerle Dieter | METHOD FOR THE PRESENTED STRUCTURED DEPOSITION OF MICROSTRUCTURES WITH LASER LIGHT |
FR2621738B1 (en) * | 1987-10-08 | 1990-02-02 | Mingam Herve | INSULATED METAL GRID FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD |
US4873152A (en) * | 1988-02-17 | 1989-10-10 | Air Products And Chemicals, Inc. | Heat treated chemically vapor deposited products |
US5149672A (en) * | 1988-08-01 | 1992-09-22 | Nadia Lifshitz | Process for fabricating integrated circuits having shallow junctions |
US4999317A (en) * | 1989-09-29 | 1991-03-12 | At&T Bell Laboratories | Metallization processing |
US5084415A (en) * | 1989-10-23 | 1992-01-28 | At&T Bell Laboratories | Metallization processing |
KR940010158B1 (en) * | 1991-07-09 | 1994-10-22 | 한국과학기술연구원 | Tungsten film depositing method using pecvd |
JP3491237B2 (en) * | 1993-09-24 | 2004-01-26 | 日本テキサス・インスツルメンツ株式会社 | Stacked conductive film structure of semiconductor device |
US20090115060A1 (en) | 2007-11-01 | 2009-05-07 | Infineon Technologies Ag | Integrated circuit device and method |
CN110983249A (en) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | Preparation method of large-area continuous layered molybdenum sulfide |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1132294A (en) * | 1966-09-21 | 1968-10-30 | Rca Corp | Method of depositing refractory metals |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR793015A (en) * | 1934-10-16 | 1936-01-15 | Dispersion Cathodique S A | Improvements in cathodic dispersion |
US2387903A (en) * | 1944-03-14 | 1945-10-30 | Mallory & Co Inc P R | Contacting element |
DE2151127C3 (en) * | 1970-12-16 | 1981-04-16 | International Business Machines Corp., 10504 Armonk, N.Y. | Process for depositing a metallization pattern and its application |
US3856647A (en) * | 1973-05-15 | 1974-12-24 | Ibm | Multi-layer control or stress in thin films |
US4234622A (en) * | 1979-04-11 | 1980-11-18 | The United States Of American As Represented By The Secretary Of The Army | Vacuum deposition method |
US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
US4404234A (en) * | 1981-12-23 | 1983-09-13 | Bell Telephone Laboratories, Incorporated | Electrode coating process |
-
1986
- 1986-09-16 GB GB8622272A patent/GB2181456B/en not_active Expired
- 1986-09-18 DE DE19863631758 patent/DE3631758A1/en active Granted
- 1986-10-03 FR FR8613803A patent/FR2588277B1/en not_active Expired - Fee Related
- 1986-10-06 JP JP23639386A patent/JPS62109973A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1132294A (en) * | 1966-09-21 | 1968-10-30 | Rca Corp | Method of depositing refractory metals |
Also Published As
Publication number | Publication date |
---|---|
DE3631758C2 (en) | 1988-05-19 |
GB8622272D0 (en) | 1986-10-22 |
FR2588277A1 (en) | 1987-04-10 |
FR2588277B1 (en) | 1991-08-16 |
JPS6248752B2 (en) | 1987-10-15 |
JPS62109973A (en) | 1987-05-21 |
DE3631758A1 (en) | 1987-04-09 |
GB2181456A (en) | 1987-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19970916 |