FR2847077B1 - Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation - Google Patents

Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation

Info

Publication number
FR2847077B1
FR2847077B1 FR0214123A FR0214123A FR2847077B1 FR 2847077 B1 FR2847077 B1 FR 2847077B1 FR 0214123 A FR0214123 A FR 0214123A FR 0214123 A FR0214123 A FR 0214123A FR 2847077 B1 FR2847077 B1 FR 2847077B1
Authority
FR
France
Prior art keywords
semiconductor components
making same
soi type
mixed
mixed soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0214123A
Other languages
English (en)
Other versions
FR2847077A1 (fr
Inventor
Bruno Ghyselen
Olivier Rayssac
Cecile Aulnette
Carlos Mazure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0214123A priority Critical patent/FR2847077B1/fr
Priority to PCT/EP2003/013697 priority patent/WO2004044975A1/fr
Priority to KR1020057007871A priority patent/KR100877252B1/ko
Priority to DE10393700.5T priority patent/DE10393700B4/de
Priority to AU2003294783A priority patent/AU2003294783A1/en
Priority to US10/704,703 priority patent/US6955971B2/en
Publication of FR2847077A1 publication Critical patent/FR2847077A1/fr
Application granted granted Critical
Publication of FR2847077B1 publication Critical patent/FR2847077B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR0214123A 2002-11-12 2002-11-12 Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation Expired - Lifetime FR2847077B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0214123A FR2847077B1 (fr) 2002-11-12 2002-11-12 Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation
PCT/EP2003/013697 WO2004044975A1 (fr) 2002-11-12 2003-11-06 Structure semi-conductrice et procede de fabrication de cette structure
KR1020057007871A KR100877252B1 (ko) 2002-11-12 2003-11-06 반도체 구조 제조방법
DE10393700.5T DE10393700B4 (de) 2002-11-12 2003-11-06 Verfahren zur Herstellung einer Halbleiteranordnung durch Ausbildung geschwächter Bereiche oder einer geschwächten Schicht und zugehöriges Halbleiterbauelement
AU2003294783A AU2003294783A1 (en) 2002-11-12 2003-11-06 Semiconductor structure, and methods for fabricating same
US10/704,703 US6955971B2 (en) 2002-11-12 2003-11-12 Semiconductor structure and methods for fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0214123A FR2847077B1 (fr) 2002-11-12 2002-11-12 Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation

Publications (2)

Publication Number Publication Date
FR2847077A1 FR2847077A1 (fr) 2004-05-14
FR2847077B1 true FR2847077B1 (fr) 2006-02-17

Family

ID=32116550

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0214123A Expired - Lifetime FR2847077B1 (fr) 2002-11-12 2002-11-12 Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation

Country Status (6)

Country Link
US (1) US6955971B2 (fr)
KR (1) KR100877252B1 (fr)
AU (1) AU2003294783A1 (fr)
DE (1) DE10393700B4 (fr)
FR (1) FR2847077B1 (fr)
WO (1) WO2004044975A1 (fr)

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Also Published As

Publication number Publication date
KR100877252B1 (ko) 2009-01-07
DE10393700T5 (de) 2005-09-15
KR20050070116A (ko) 2005-07-05
AU2003294783A1 (en) 2004-06-03
US6955971B2 (en) 2005-10-18
FR2847077A1 (fr) 2004-05-14
US20040150067A1 (en) 2004-08-05
WO2004044975A1 (fr) 2004-05-27
DE10393700B4 (de) 2019-06-06

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