FR2345532A1 - Procede de nettoyage de la surface de substrats semi-conducteurs - Google Patents

Procede de nettoyage de la surface de substrats semi-conducteurs

Info

Publication number
FR2345532A1
FR2345532A1 FR7703512A FR7703512A FR2345532A1 FR 2345532 A1 FR2345532 A1 FR 2345532A1 FR 7703512 A FR7703512 A FR 7703512A FR 7703512 A FR7703512 A FR 7703512A FR 2345532 A1 FR2345532 A1 FR 2345532A1
Authority
FR
France
Prior art keywords
cleaning
semiconductor substrates
substrates
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7703512A
Other languages
English (en)
Other versions
FR2345532B1 (fr
Inventor
Jagtar S Basi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2345532A1 publication Critical patent/FR2345532A1/fr
Application granted granted Critical
Publication of FR2345532B1 publication Critical patent/FR2345532B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
FR7703512A 1976-03-25 1977-02-01 Procede de nettoyage de la surface de substrats semi-conducteurs Granted FR2345532A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/670,508 US4050954A (en) 1976-03-25 1976-03-25 Surface treatment of semiconductor substrates

Publications (2)

Publication Number Publication Date
FR2345532A1 true FR2345532A1 (fr) 1977-10-21
FR2345532B1 FR2345532B1 (fr) 1979-03-09

Family

ID=24690679

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703512A Granted FR2345532A1 (fr) 1976-03-25 1977-02-01 Procede de nettoyage de la surface de substrats semi-conducteurs

Country Status (7)

Country Link
US (1) US4050954A (fr)
JP (1) JPS52117060A (fr)
CA (1) CA1053382A (fr)
DE (1) DE2706519C2 (fr)
FR (1) FR2345532A1 (fr)
GB (1) GB1525675A (fr)
IT (1) IT1114857B (fr)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
JPS6119133A (ja) * 1984-07-05 1986-01-28 Nec Corp 半導体装置の製造方法
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
JPH0779166B2 (ja) * 1991-12-25 1995-08-23 セイコーエプソン株式会社 薄膜トランジスタの製造方法
KR0166404B1 (ko) * 1993-03-26 1999-02-01 사토 후미오 연마방법 및 연마장치
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
AU7221294A (en) * 1993-07-30 1995-02-28 Semitool, Inc. Methods for processing semiconductors to reduce surface particles
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US6267122B1 (en) * 1993-09-10 2001-07-31 Texas Instruments Incorporated Semiconductor cleaning solution and method
US5885138A (en) 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP2586319B2 (ja) * 1993-12-15 1997-02-26 日本電気株式会社 半導体基板の研磨方法
DE19544328B4 (de) * 1994-11-29 2014-03-20 Ebara Corp. Poliervorrichtung
EP0718873A3 (fr) * 1994-12-21 1998-04-15 MEMC Electronic Materials, Inc. Procédé de nettoyage de plaquettes de silicium hydrophobe
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
IL113829A (en) 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
US20070123151A1 (en) * 1995-05-23 2007-05-31 Nova Measuring Instruments Ltd Apparatus for optical inspection of wafers during polishing
US7169015B2 (en) * 1995-05-23 2007-01-30 Nova Measuring Instruments Ltd. Apparatus for optical inspection of wafers during processing
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
DE19709217A1 (de) * 1997-03-06 1998-09-10 Wacker Siltronic Halbleitermat Verfahren zur Behandlung einer polierten Halbleiterscheibe gleich nach Abschluß einer Politur der Halbleiterscheibe
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US5922136A (en) * 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
US6230720B1 (en) * 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
US6375548B1 (en) 1999-12-30 2002-04-23 Micron Technology, Inc. Chemical-mechanical polishing methods
US6416391B1 (en) * 2000-02-28 2002-07-09 Seh America, Inc. Method of demounting silicon wafers after polishing
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
WO2006076005A1 (fr) * 2005-01-12 2006-07-20 Boc, Inc. Systeme de nettoyage d'une surface utilisant un aerosol cryogenique et un reactif fluide
TWI324797B (en) * 2005-04-05 2010-05-11 Lam Res Corp Method for removing particles from a surface
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Okiセミコンダクタ株式会社 半導体ウェハの製造方法
CN101610980A (zh) 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2690383A (en) * 1952-04-29 1954-09-28 Gen Electric Co Ltd Etching of crystal contact devices
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3436259A (en) * 1966-05-12 1969-04-01 Ibm Method for plating and polishing a silicon planar surface
JPS50147287A (fr) * 1974-05-15 1975-11-26

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BRITISH JOURNAL OF APPLIED PHYSICS, VOLUME 12, NO. 3, MARS 1961 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY EXTENDED ABSTRACTS FALLMEETING, OCTOBER 8-13, 1972 *
LETCHWORTH U.K. B.A.IRVING "THE PREPARATION OF THIN FILMS OF GERMANIUM AND SILICON", PAGE 92-93 *
VOLUME 72-2, 1972 PRINCETON USA R.L.MEEK ET AL. "SILICON SURFACE CONTAMINATION POLISHING AND CLEANING"., PAGES 602-603) *

Also Published As

Publication number Publication date
GB1525675A (en) 1978-09-20
JPS52117060A (en) 1977-10-01
FR2345532B1 (fr) 1979-03-09
DE2706519C2 (de) 1985-09-26
DE2706519A1 (de) 1977-10-06
CA1053382A (fr) 1979-04-24
JPS542539B2 (fr) 1979-02-08
IT1114857B (it) 1986-01-27
US4050954A (en) 1977-09-27

Similar Documents

Publication Publication Date Title
FR2345532A1 (fr) Procede de nettoyage de la surface de substrats semi-conducteurs
RO71012A (fr) Procede pour la preparation des alkylene terephtalates oligomeres
BE831928A (fr) Procede de fabrication de colles de contact
BE868200A (fr) Procede pour fabriquer des substrats ceramiques
FR2288389A1 (fr) Procede d'electrodeposition de metaux sur des substrats semi-conducteurs
FR2310373A1 (fr) Procede de fabrication de copolymeres de fluorosilicones
BE879913A (fr) Procede de purification de silicium
BE850314A (fr) Procede de revetement d'un substrat de verre
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
BE829246A (fr) Procede de nettoyage de la surface des bandes coulees en continu
BE844064A (fr) Procede de superfinition des surfaces de semi-conducteurs
FR2302499A1 (fr) Procede pour la fabrication de revete
FR2340915A1 (fr) Procede de traitement de surfaces vitreuses
FR2333567A1 (fr) Procede de croissance de couches epitaxiales lisses sur des substrats desorientes
BE857244A (fr) Procede de preparation de 3-chlorocephalosporines
IT1224144B (it) Procedimento per il trattamento dei tessili
BE852668A (fr) Procede de preparation de 3-halomethylcephemes
BE860267R (fr) Procede de preparation de para-alkylphenols
PT66584A (fr) Procede de preparation de nouvelle aryltrifluoroethylamines
JPS51150972A (en) Process for cleaning semiconductor substrate polished
JPS5330876A (en) Method of cleaning surface of semiconductor
BE876210A (fr) Procede de production de compositions detergentes
FR2342968A1 (fr) Procede de preparation de 3-desoxyanthocyanidines
FR2343330A1 (fr) Procede de masticage de disques semi-conducteurs
JPS532517A (en) Method of surface treatment of glass substrate

Legal Events

Date Code Title Description
ST Notification of lapse