EP2140504A4 - Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate - Google Patents

Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Info

Publication number
EP2140504A4
EP2140504A4 EP08748460A EP08748460A EP2140504A4 EP 2140504 A4 EP2140504 A4 EP 2140504A4 EP 08748460 A EP08748460 A EP 08748460A EP 08748460 A EP08748460 A EP 08748460A EP 2140504 A4 EP2140504 A4 EP 2140504A4
Authority
EP
European Patent Office
Prior art keywords
partitioned
obtaining high
semiconductor devices
substrate
devices fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08748460A
Other languages
German (de)
French (fr)
Other versions
EP2140504A1 (en
EP2140504B1 (en
Inventor
Li Wang
Fengyi Jiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Publication of EP2140504A1 publication Critical patent/EP2140504A1/en
Publication of EP2140504A4 publication Critical patent/EP2140504A4/en
Application granted granted Critical
Publication of EP2140504B1 publication Critical patent/EP2140504B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.
EP08748460A 2007-04-20 2008-05-06 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate Not-in-force EP2140504B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200710104428A CN100580905C (en) 2007-04-20 2007-04-20 Method of obtaining high-quality boundary for manufacturing semiconductor device on divided substrate
US11/776,881 US20080261403A1 (en) 2007-04-20 2007-07-12 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
PCT/CN2008/000902 WO2008128444A1 (en) 2007-04-20 2008-05-06 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Publications (3)

Publication Number Publication Date
EP2140504A1 EP2140504A1 (en) 2010-01-06
EP2140504A4 true EP2140504A4 (en) 2010-04-28
EP2140504B1 EP2140504B1 (en) 2011-04-20

Family

ID=39872642

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08748460A Not-in-force EP2140504B1 (en) 2007-04-20 2008-05-06 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Country Status (6)

Country Link
US (2) US20080261403A1 (en)
EP (1) EP2140504B1 (en)
CN (1) CN100580905C (en)
AT (1) ATE506701T1 (en)
DE (1) DE602008006376D1 (en)
WO (1) WO2008128444A1 (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8767787B1 (en) 2008-07-14 2014-07-01 Soraa Laser Diode, Inc. Integrated laser diodes with quality facets on GaN substrates
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8143148B1 (en) * 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
WO2010017148A1 (en) 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
JP5207944B2 (en) * 2008-12-11 2013-06-12 スタンレー電気株式会社 Manufacturing method of semiconductor light emitting device
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US9531164B2 (en) * 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
KR101640830B1 (en) * 2009-08-17 2016-07-22 삼성전자주식회사 Substrate structure and manufacturing method of the same
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
CN101814565A (en) * 2010-03-02 2010-08-25 上海蓝光科技有限公司 Structure of light emitting diode chip and manufacture method thereof
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8597967B1 (en) 2010-11-17 2013-12-03 Soraa, Inc. Method and system for dicing substrates containing gallium and nitrogen material
CN102569543B (en) * 2010-12-30 2015-09-02 比亚迪股份有限公司 A kind of manufacture method of light-emitting diode chip for backlight unit
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
CN105322101B (en) 2012-01-12 2019-04-05 大日本印刷株式会社 The manufacturing method of deposition mask and organic semiconductor device
CN105779935A (en) * 2012-01-12 2016-07-20 大日本印刷株式会社 Vapor Deposition Mask Manufacturing Method And Organic Semiconductor Element Manufacturing Method
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
WO2014084682A1 (en) * 2012-11-29 2014-06-05 Kim Sungdong Method for exfoliating semiconductor thin film from mother substrate, and method for fabricating semiconductor device using same
CN105556684B (en) 2013-07-22 2019-10-18 亮锐控股有限公司 The method for separating the luminaire being formed on substrate wafer
CN104576865A (en) * 2013-10-25 2015-04-29 广东德力光电有限公司 Stress-released GaN-based LED structure and manufacturing method
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US10707308B2 (en) 2017-12-24 2020-07-07 HangZhou HaiCun Information Technology Co., Ltd. Hetero-epitaxial output device array
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
TWI725688B (en) 2019-12-26 2021-04-21 新唐科技股份有限公司 Semiconductor structure and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680085A (en) * 1986-04-14 1987-07-14 Ovonic Imaging Systems, Inc. Method of forming thin film semiconductor devices
JPH0575110A (en) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd Semiconductor device
US5406095A (en) * 1992-08-27 1995-04-11 Victor Company Of Japan, Ltd. Light emitting diode array and production method of the light emitting diode
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
US6001678A (en) * 1995-03-14 1999-12-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JPH10275936A (en) * 1997-03-28 1998-10-13 Rohm Co Ltd Method for manufacturing semiconductor light-emitting element
JP3805883B2 (en) * 1997-12-26 2006-08-09 東芝電子エンジニアリング株式会社 Gallium nitride based semiconductor wafer, gallium nitride based semiconductor device, and manufacturing method thereof
JP3338360B2 (en) * 1998-03-23 2002-10-28 三洋電機株式会社 Gallium nitride based semiconductor wafer manufacturing method
JP3724620B2 (en) * 1998-09-29 2005-12-07 シャープ株式会社 Manufacturing method of light emitting diode
JP3484394B2 (en) * 2000-04-12 2004-01-06 Ｎｅｃエレクトロニクス株式会社 Optical semiconductor device and method of manufacturing the same
US6294414B1 (en) * 2000-05-04 2001-09-25 Agere Systems Guardian Corp. Method of fabricating heterointerface devices having diffused junctions
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
DE60212755T2 (en) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optical semiconductor device and manufacturing method
US6939730B2 (en) * 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
JP4121740B2 (en) * 2001-12-19 2008-07-23 三洋電機株式会社 Manufacturing method of semiconductor device
JP2003209280A (en) * 2002-01-11 2003-07-25 Hitachi Cable Ltd Light emitting diode array
US7030032B2 (en) * 2003-05-13 2006-04-18 Raytheon Company Photodiode passivation technique
JP2006086516A (en) * 2004-08-20 2006-03-30 Showa Denko Kk Method for manufacturing semiconductor light emitting device
CN1697205A (en) * 2005-04-15 2005-11-16 南昌大学 Method for preparing film of indium-gallium-aluminum-nitrogen on silicon substrate and light emitting device
US20080087875A1 (en) * 2006-10-11 2008-04-17 Feng-Hsu Fan Protection for the epitaxial structure of metal devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

Also Published As

Publication number Publication date
US8426325B2 (en) 2013-04-23
EP2140504A1 (en) 2010-01-06
US20110281422A1 (en) 2011-11-17
EP2140504B1 (en) 2011-04-20
DE602008006376D1 (en) 2011-06-01
US20080261403A1 (en) 2008-10-23
ATE506701T1 (en) 2011-05-15
CN100580905C (en) 2010-01-13
WO2008128444A1 (en) 2008-10-30
CN101290908A (en) 2008-10-22

Similar Documents

Publication Publication Date Title
EP2140504A4 (en) Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
TW200614507A (en) Finfet transistor process
WO2010059790A3 (en) Integration sequences with top profile modification
WO2007149991A3 (en) Dielectric deposition and etch back processes for bottom up gapfill
WO2010090394A3 (en) Method for manufacturing an insulated conductive pattern
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
WO2009108311A3 (en) Isolated transistors and diodes and isolation and termination structures for semiconductor die
SG144121A1 (en) Nitride semiconductor substrate and manufacturing method thereof
TW200711066A (en) Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device
WO2012050321A3 (en) Method and apparatus for manufacturing three-dimensional- structure memory device
WO2007103147A3 (en) U-shaped transistor and corresponding manufacturing method
TW200744218A (en) Semiconductor device and method of manufacturing the same
TW200603026A (en) Method for electro-luminescent display fabrication
TW200943473A (en) Method for fabricating pitch-doubling pillar structures
WO2010044642A3 (en) Semiconductor light emitting device and method for manufacturing the same
SG162653A1 (en) Method for fabricating a semiconductor substrate and semiconductor substrate
TW200710946A (en) Method for manufacturing semiconductor apparatus and the semiconductor apparatus
TW200723417A (en) Semiconductor package structure and method for separating package of wafer level package
SG156565A1 (en) Method of forming shallow trench isolation structures for integrated circuits
WO2009014345A3 (en) Light emitting device and method of manufacturing the same
WO2007089377A3 (en) Method of filling a high aspect ratio trench isolation region and resulting structure
EP4032700A4 (en) Method for manufacturing silicon nitride substrate
EP3731260A4 (en) Method for producing group iii nitride semiconductor substrate
TW200633123A (en) Semiconductor device and manufacturing method thereof
WO2011041140A3 (en) Method of filling deep trench in a substrate

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20091015

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

A4 Supplementary search report drawn up and despatched

Effective date: 20100329

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/00 20100101AFI20081110BHEP

Ipc: H01L 27/15 20060101ALI20100323BHEP

Ipc: H01L 21/306 20060101ALI20100323BHEP

Ipc: H01L 21/301 20060101ALI20100323BHEP

Ipc: H01L 21/20 20060101ALI20100323BHEP

DAX Request for extension of the european patent (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/00 20100101AFI20101021BHEP

Ipc: H01L 27/15 20060101ALI20101021BHEP

Ipc: H01L 21/20 20060101ALI20101021BHEP

Ipc: H01L 21/306 20060101ALI20101021BHEP

Ipc: H01L 21/301 20060101ALI20101021BHEP

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 602008006376

Country of ref document: DE

Date of ref document: 20110601

Kind code of ref document: P

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602008006376

Country of ref document: DE

Effective date: 20110601

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

REG Reference to a national code

Ref country code: NL

Ref legal event code: T3

LTIE Lt: invalidation of european patent or patent extension

Effective date: 20110420

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110720

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110822

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110731

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110721

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110820

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

26N No opposition filed

Effective date: 20120123

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110506

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602008006376

Country of ref document: DE

Effective date: 20120123

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120531

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110720

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20110420

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 8

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 9

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 10

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20180515

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20180529

Year of fee payment: 11

Ref country code: NL

Payment date: 20180514

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20180511

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20180530

Year of fee payment: 11

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602008006376

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MM

Effective date: 20190601

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20190506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190507

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190506

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191203

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190601

REG Reference to a national code

Ref country code: SE

Ref legal event code: EUG

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190531