EP0208315A1 - Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers - Google Patents

Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers Download PDF

Info

Publication number
EP0208315A1
EP0208315A1 EP86109420A EP86109420A EP0208315A1 EP 0208315 A1 EP0208315 A1 EP 0208315A1 EP 86109420 A EP86109420 A EP 86109420A EP 86109420 A EP86109420 A EP 86109420A EP 0208315 A1 EP0208315 A1 EP 0208315A1
Authority
EP
European Patent Office
Prior art keywords
openings
plastic
workpiece
carrier
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86109420A
Other languages
German (de)
French (fr)
Other versions
EP0208315B1 (en
Inventor
Gerhard Dr. Dipl.-Ing. Brehm (Tu)
Ingo Haller
Otto Dipl.-Ing. Rothenaicher (Fh)
Karl-Heinz Ing. Grad. Langsdorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0208315A1 publication Critical patent/EP0208315A1/en
Application granted granted Critical
Publication of EP0208315B1 publication Critical patent/EP0208315B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping

Definitions

  • the invention relates to a method for the double-sided machining of disk-shaped workpieces, in particular semiconductor wafers, in which the workpieces, which are inserted into the openings of a carrier disk which has a smaller thickness than the workpiece and which is rotated by a drive unit acting on its outer circumference, are added with the removal of a workpiece acting suspension to be subjected to a circular movement between sheets moving over their top and bottom.
  • Carrier washers are used, which are either made entirely of metal, e.g. Sheet steel, are made or consist entirely of plastic.
  • the carrier disks made of metal are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks no longer continue can be used.
  • Such problems do not occur with the carrier disks made of plastic.
  • the service life is short, since in particular the outer circumference of the carrier disks cannot withstand the mechanical loads from the drive unit, for example a planetary gear, for long.
  • the object is achieved by a method which is characterized in that carrier disks are used in which at least the outer circumference is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area coming into contact with the outer circumference of the workpiece a plastic with a modulus of elasticity of 1.0 to 8-10 4 N / mm 2 is provided.
  • This method can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material, such as semiconductor wafers made of, for example, silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as gallium-gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as glass.
  • Suitable materials are those which have sufficient mechanical stability in relation to the mechanical loads caused by the drive, especially tensile and compressive loads.
  • Suitable materials such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2 .
  • care must be taken to ensure that the selected material is attacked as little as possible by the abrasive suspension used, ie generally by the polishing or lapping agent, in order to increase the service life of the carrier disks and contamination of the workpieces to be machined largely excluded.
  • the use of plastics with sufficient tensile strength for example some types of Bakelite or fiber-reinforced materials, is not excluded.
  • plastics that come into contact with the outer circumference of the workpiece materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process.
  • plastics with a modulus of elasticity of 1.0 to 8 ⁇ 10 4 N / mm 2 that is to say in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene.
  • influences on the mechanical stability resulting from the geometry of the area of the carrier disk made of plastic are also to be taken into account.
  • Carrier disks suitable for carrying out the method according to the invention which typically have a thickness of approximately 150-850 ⁇ m, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways.
  • a possible embodiment, which is particularly suitable for polishing on both sides, consists, for example, of a round base plate made of metal, preferably sheet steel. This has circular openings, into which flat structures made of plastic can be inserted, which in turn have openings suitable for receiving the material to be processed.
  • Such fabrics can for example be rings made of plastic with a width of favorable 1 to 10 mm, the outer diameter of which is advantageously chosen to be slightly smaller than the inner diameter of the carrier disk openings, so that they can be rotated due to this slight play.
  • the guidance of the rings during the rotary movement can also be improved, for example, by the inner circumferential surface of the openings not being made flat, but tapering inwards.
  • the inside diameter of the rings is generally chosen to be slightly larger than their outside diameter, so that they also have a margin for their own movements, for example rotation.
  • Both the metal and the plastic parts of these carrier disks can be inexpensively produced in the desired shape by punching from metal, preferably steel sheets and plastic, preferably polyvinyl chloride, films of appropriate thickness.
  • the carrier disks mentioned are used with particular advantage when machining workpieces that deviate from a circular geometry.
  • examples of this are disks with a square cross section made of cast, directionally solidified silicon, which are preferably used as the base material for solar cells, or disks made of semiconductor materials obtained by the boat-pulling process, such as gallium or indium phosphide.
  • plastic round plastic discs with square, rectangular or polygonal or elliptical to oval openings are used instead of plastic rings.
  • the workpieces placed in the openings are then in one opposite each other during the machining process the rotatable plastic disc fixed and only variable within the respective range held position, but remain rotatable together with the plastic disc within the opening of the carrier disc. With these materials, an improved geometry can be achieved in comparison with the conventional methods.
  • a carrier disk for carrying out the method according to the invention which can also be used advantageously for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which have openings for receiving the or workpieces to be machined are provided.
  • the fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate.
  • Another possibility is to first pour the openings of the base plate, for example by injection molding, with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate.
  • these openings can also be polygonal. for example, have a prismatic, square or hexagonal cross section. Applies for the dimensions of the incorporated into the plastic of openings as in the embodiment with movable K unstscherinlagen the principle that a clearance appropriate for the inserted workpiece is left. In general, it has proven itself, for example, for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.
  • a carrier disk for carrying out the method according to the invention consists of a round base plate made of plastic, which has suitable openings for receiving the workpieces to be machined and is surrounded by a ring made of metal, on which the drive unit acts.
  • a firm connection between the metal and plastic part has proven itself in order to ensure reliable transmission of the rotational movement predetermined by the drive to the inner region of the carrier disk.
  • the connection can be supported for example by gluing and / or the design of the inner edge of the metal ring, for example by using e.g. groove or serrated recesses of the metal ring and the plastic base plate are interlocked.
  • a polygonal, e.g. hexagonal inner circumference of the metal ring and a correspondingly shaped outer circumference of the base plate made of plastic are conceivable.
  • the method in question to fill the interior of the given ring, stamped, for example, from sheet steel, with the aid of the injection molding process, using a plastic plate made of, for example, polypropylene, and from there the openings for the workpieces of the appropriate size, i.e. to punch out with scope.
  • a plastic plate made of, for example, polypropylene
  • Another possibility is to prefabricate the ring and the base plate separately and to assemble the individual parts to the desired carrier disk only when required.
  • the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components.
  • differences in thickness of up to + 5% of the total thickness can usually be tolerated.
  • lapping and / or polishing on both sides, in particular of semiconductor wafers significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.
  • a commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 ⁇ m), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 pm, tensile strength 2000 N / mm 2 ) were inserted.
  • polishing agent a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area).
  • the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.
  • Carrier washers were used in the manner according to the invention, which were made of sheet steel (thickness 380 pm, tensile strength 2000 N / mm 2 ), and in their round, punched openings (inner diameter 85 mm) for receiving the washers an additional of 380 microns thick PVC - Foil punched ring (outer diameter 84.8 mm, inner diameter 77 mm, modulus of elasticity 1.5 ⁇ 10 3 N / mm 2 ) was inserted. This gave both the discs and the ring sufficient scope for their own movements.
  • the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Es wird ein Verfahren zum beidseitigen abtragenden Bearbeiten von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben angegeben. Erfindungsgemäß werden dabei Trägerscheiben eingesetzt, bei denen der Außenumfang, an welchem die Antriebskräfte angreifen, aus einem Werkstoff mit einer Zugfestigkeit von mindestens 100 N/mm² gefertigt ist, während im mit den zu bearbeitenden Werkstücken in Kontakt kommenden Bereich ein Kunststoff mit Elastizitätsmodul von 1,0 bis 8·10<4>N/mm² vorgesehen ist.A method for machining both sides of disk-shaped workpieces, in particular semiconductor wafers, is specified. According to the invention, carrier disks are used in which the outer circumference, to which the driving forces act, is made of a material with a tensile strength of at least 100 N / mm², while in the area coming into contact with the workpieces to be machined, a plastic with a modulus of elasticity of 1, 0 to 8 · 10 <4> N / mm² is provided.

Description

Die Erfindung betrifft ein Verfahren zum beidseitigen abtragenden Bearbeiten von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben, bei welchem die Werkstücke, welche in die Öffnungen einer durch einean ihrem Außenumfang angreifende Antriebseinheit in Drehung versetzten, geringere Dicke als das Werkstück aufweisenden Trägerscheibe eingelegt sind, unter Zusatz einer abtragend wirkenden Suspension einer kreisenden Bewegung zwischen über ihre Ober- und Unterseite bewegten Flächengebilden unterworfen werden.The invention relates to a method for the double-sided machining of disk-shaped workpieces, in particular semiconductor wafers, in which the workpieces, which are inserted into the openings of a carrier disk which has a smaller thickness than the workpiece and which is rotated by a drive unit acting on its outer circumference, are added with the removal of a workpiece acting suspension to be subjected to a circular movement between sheets moving over their top and bottom.

Ein solches Verfahren, welches beispielsweise beim beidseitigen Polieren oder Läppen von Halbleiterscheiben eingesetzt werden kann, ist z.B. in der US-PS 36 91 694 oder in einem im IBM Technical Disclosure Bulletin, Vol. 15, No. 6, November 1972, Seite 1760-1761 veröffentlichten Artikel (Verfasser: F.E. Goetz und J.R. Hause) beschrieben. Dabei kommen Trägerscheiben zum Einsatz, die entweder ganz aus Metall, z.B. Stahlblech, gefertigt sind oder aber ganz aus Kunststoff bestehen.Such a method, which can be used, for example, when polishing or lapping semiconductor wafers on both sides, is e.g. in US-PS 36 91 694 or in one in the IBM Technical Disclosure Bulletin, Vol. 15, No. 6, November 1972, pages 1760-1761 published articles (author: F.E. Goetz and J.R. Hause). Carrier washers are used, which are either made entirely of metal, e.g. Sheet steel, are made or consist entirely of plastic.

Die Trägerscheiben aus Metall zeichnen sich zwar durch lange Standzeiten aus, verursachen aber im Verlauf des Bearbeitungsvorganges insbesondere bei den vielfach spröden und gegenüber mechanischen Belastungen empfindlichen Halbleiterscheiben Beschädigungen am Scheibenrand wie etwa Randausbrüche, so daß ein großer Teil der bearbeiteten Scheiben nicht mehr weiterverwendet werden kann. Solche Probleme treten bei den aus Kunststoff gefertigten Trägerscheiben nicht auf. Dafür sind aber die Standzeiten gering, da insbesondere der Außenumfang der Trägerscheiben den mechanischen Belastungen durch die Antriebseinheit, z.B. ein Planetengetriebe, nicht lange standzuhalten vermag.The carrier disks made of metal are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks no longer continue can be used. Such problems do not occur with the carrier disks made of plastic. However, the service life is short, since in particular the outer circumference of the carrier disks cannot withstand the mechanical loads from the drive unit, for example a planetary gear, for long.

Aufgabe der Erfindung war es daher, ein Verfahren anzugeben, welches eine beidseitig abtragende Behandlung wie Läppen oder Polieren von scheibenförmigen Werkstücken unter geringer mechanischer Beanspruchung des Werkstückrandes bei gleichzeitiger hoher Standzeit der eingesetzten Trägerscheiben gestattet.It was therefore an object of the invention to provide a method which permits treatment on both sides, such as lapping or polishing of disk-shaped workpieces, with little mechanical stress on the workpiece edge and at the same time a long service life of the carrier disks used.

Gelöst wird die Aufgabe durch ein Verfahren, welches dadurch gekennzeichnet ist, daß Trägerscheiben eingesetzt werden, bei denen zumindest der Außenumfang aus einem Werkstoff mit einer Zugfestigkeit von mindestens 100 N/mm2 gefertigt ist, während im mit dem Außenumfang des Werkstückes in Kontakt kommenden Bereich ein Kunststoff mit einem Elastizitätsmodul von 1,0 bis 8-10 4 N/mm2 vorgesehen ist.The object is achieved by a method which is characterized in that carrier disks are used in which at least the outer circumference is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area coming into contact with the outer circumference of the workpiece a plastic with a modulus of elasticity of 1.0 to 8-10 4 N / mm 2 is provided.

Dieses Verfahren kann in den üblichen, beispielsweise zum beidseitigen Polieren oder Läppen von scheibenförmigen Werkstücken gebräuchlichen Maschinen unter den dem Fachmann geläufigen Bedingungen durchgeführt werden. Es eignet sich insbesondere das abtragende Bearbeiten von Scheiben aus kristallinem Material wie Halbleiterscheiben aus beispielsweise Silizium, Germanium, Galliumarsenid, Galliumphosphid, Indiumphosphid oder Scheiben aus oxydischem Material wie z.B. Gallium-Gadolinium-Granat. Daneben kann es auch für das abtragende Bearbeiten von scheibenförmigen Werkstücken aus anderen spröden Werkstoffen wie z.B. Glas angewendet werden.This method can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material, such as semiconductor wafers made of, for example, silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as gallium-gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as glass.

Geeignete Werkstoffe sind dabei solche, die eine gegenüber den durch den Antrieb verursachten mechanischen Beanspruchungen, vor allem Zug- und Druckbelastungen, ausreichende mechanische Stabilität aufweisen. Geeignete Materialien, wie z.B. Metalle wie Aluminium oder insbesondere verschiedene Stähle, besitzen allgemein eine Zugfestigkeit von mindestens 100 N/mm2, vorzugsweise mindestens 1000 N/mmz. In diesem Zusammenhang ist darauf zu achten, daß der gewählte Werkstoff von der jeweils eingesetzten abtragend wirkenden Suspension, d.h. in der Regel von dem Polier- oder Läppmittel, möglichst wenig angegriffen wird, um die Lebensdauer der Trägerscheiben zu erhöhen und eine Kontamination der zu bearbeitenden Werkstücke weitestgehend auszuschließen. Grundsätzlich ist auch die Verwendung von Kunststoffen ausreichender Zugfestigkeit, also z.B. mancher Bakelitarten oder faserverstärkter Materialien, nicht ausgeschlossen.Suitable materials are those which have sufficient mechanical stability in relation to the mechanical loads caused by the drive, especially tensile and compressive loads. Suitable materials, such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2 . In this context, care must be taken to ensure that the selected material is attacked as little as possible by the abrasive suspension used, ie generally by the polishing or lapping agent, in order to increase the service life of the carrier disks and contamination of the workpieces to be machined largely excluded. In principle, the use of plastics with sufficient tensile strength, for example some types of Bakelite or fiber-reinforced materials, is not excluded.

Als Kunststoffe, die mit dem Außenumfang des Werkstückes in Kontakt kommen, können solche Materialien eingesetzt werden, die durch ihre Elastizität eine geringe mechanische Belastung des Werkstückumfanges und durch ihre mechanische Stabilität zugleich während des Bearbeitungsvorganges eine sichere Lagerung des Werkstückes gewährleisten. Grundsätzlich geeignet sind daher Kunststoffe mit einem Elastizitätsmodul von 1,0 bis 8·104 N/mm2, also insbesondere Materialien auf Polyvinylchlorid-, Polypropylen-, Polyethylen- oder Polytetrafluorethylenbasis. Dabei sind jedoch auch gegebenenfalls aus der Geometrie des aus Kunststoff bestehenden Bereiches der Trägerscheibe resultierende Einflüsse auf die mechanische Stabilität zu berücksichtigen.As plastics that come into contact with the outer circumference of the workpiece, materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process. Basically suitable are therefore plastics with a modulus of elasticity of 1.0 to 8 · 10 4 N / mm 2 , that is to say in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene. However, influences on the mechanical stability resulting from the geometry of the area of the carrier disk made of plastic are also to be taken into account.

Zur Durchführung des erfindungsgemäßen Verfahrens geeignete Trägerscheiben, welche beispielsweise für das abtragende Bearbeiten von Halbleiterscheiben je nach Dicke des Werkstückes typisch eine Dicke von etwa 150-850 pm aufweisen, können in verschiedener Weise gestaltet sein. Eine mögliche Ausführungsform, welche sich insbesondere für das beidseitige Polieren eignet, besteht beispielsweise aus einer aus Metall, vorzugsweise Stahlblech, gefertigten runden Grundplatte. Diese besitzt kreisförmige Öffnungen, in welche Flächengebilde aus Kunststoff eingelegt werden können, welche ihrerseits zur Aufnahme des zu bearbeitenden Werkstoffes geeignete Öffnungen aufweisen. Solche Flächengebilde können beispielsweise Ringe aus Kunststoff mit einer Breite von günstig 1 bis 10 mm sein, deren Außendurchmesser zweckmäßig geringfügig kleiner gewählt wird als der Innendurchmesser der Trägerscheibenöffnungen, so daß sie aufgrund dieses geringen Spiels drehbar sind. Gegebenenfalls kann auch die Führung der Ringe bei der Drehbewegung beispielsweise dadurch verbessert werden, daß die innere Umfangsfläche der Öffnungen nicht eben, sondern konisch nach innen zulaufend ausgebildet wird. Der Innendurchmesser der Ringe wird im Falle runder Werkstücke im allgemeinen geringfügig größer gewählt als deren Außendurchmesser, so daß auch diese einen Spielraum für Eigenbewegungen, z.B. Rotation, besitzen. Sowohl die Metall-, als auch die Kunststoffteile dieser Trägerscheiben lassen sich günstig in der gewünschten Form durch Stanzen aus Metall-, bevorzugt Stahlblechen und Kunststoff-, bevorzugt Polyvinylchloridfolien entsprechender Dicke herstellen.Carrier disks suitable for carrying out the method according to the invention, which typically have a thickness of approximately 150-850 μm, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways. A possible embodiment, which is particularly suitable for polishing on both sides, consists, for example, of a round base plate made of metal, preferably sheet steel. This has circular openings, into which flat structures made of plastic can be inserted, which in turn have openings suitable for receiving the material to be processed. Such fabrics can for example be rings made of plastic with a width of favorable 1 to 10 mm, the outer diameter of which is advantageously chosen to be slightly smaller than the inner diameter of the carrier disk openings, so that they can be rotated due to this slight play. If necessary, the guidance of the rings during the rotary movement can also be improved, for example, by the inner circumferential surface of the openings not being made flat, but tapering inwards. In the case of round workpieces, the inside diameter of the rings is generally chosen to be slightly larger than their outside diameter, so that they also have a margin for their own movements, for example rotation. Both the metal and the plastic parts of these carrier disks can be inexpensively produced in the desired shape by punching from metal, preferably steel sheets and plastic, preferably polyvinyl chloride, films of appropriate thickness.

Mit besonderem Vorteil werden die genannten Trägerscheiben bei der Bearbeitung von Werkstücken eingesetzt, die von einer kreisförmigen Geometrie abweichen. Beispiele hierfür sind Scheiben mit quadratischem Querschnitt aus gegossenem, gerichtet erstarrtem Silicium, welche vorzugsweise als Solarzellengrundmaterial eingesetzt werden, oder Scheiben aus nach dem Bootziehverfahren gewonnenen Halbleitermaterialien, wie etwa Gallium- oder Indiumphosphid. Für solche werden anstelle von Kunststoffringen günstig runde Kunststoffscheiben mit quadratischen, rechteckigen oder polygonalen bzw.elliptischen bis ovalen Öffnungen eingesetzt. Die in die Öffnungen eingelegten Werkstücke werden dann während des Bearbeitungsvorganges zwar in einer gegenüber der drehbaren Kunststoffscheibe festgelegten und nur innerhalb des jeweiligen Spielraumes variierbaren Position gehalten,bleiben aber zusammen mit der Kunststoffscheibe innerhalb der Öffnung der Trägerscheibe drehbar. Damit läßt sich bei diesen Materialien eine im Vergleich zu den herkömmlichen Verfahren verbesserte Geometrie erreichen.The carrier disks mentioned are used with particular advantage when machining workpieces that deviate from a circular geometry. Examples of this are disks with a square cross section made of cast, directionally solidified silicon, which are preferably used as the base material for solar cells, or disks made of semiconductor materials obtained by the boat-pulling process, such as gallium or indium phosphide. For such plastic round plastic discs with square, rectangular or polygonal or elliptical to oval openings are used instead of plastic rings. The workpieces placed in the openings are then in one opposite each other during the machining process the rotatable plastic disc fixed and only variable within the respective range held position, but remain rotatable together with the plastic disc within the opening of the carrier disc. With these materials, an improved geometry can be achieved in comparison with the conventional methods.

Eine weitere mögliche Ausführungsform einer Trägerscheibe zur Durchführung des erfindungsgemäßen Verfahrens, welche mit Vorteil auch beim beidseitigen Läppen eingesetzt werden kann, besteht aus einer mit kreisförmigen bis polygonalen Öffnungen versehenen Grundplatte mit in diesen Öffnungen fixierten Flächengebilden aus Kunststoff, welche mit Öffnungen zur Aufnahme des oder der abtragend zu bearbeitenden Werkstücke versehen sind. Die Fixierung kann dabei beispielsweise dadurch erreicht werden, daß die paßgerecht ausgestanzten Kunststoffteile mit der metallenen Grundplatte verklebt werden. Eine andere Möglichkeit besteht darin, die Öffnungen der Grundplatte zunächst z.B. nach dem Spritzgußverfahren mit einer Kunststoffolie, bevorzugt aus Polypropylen, auszugießen und aus dieser Folie dann die gewünschte Öffnung auszustanzen. Gegebenenfalls kann die Fixierung durch in die Öffnungen der Grundplatte eingearbeitete, beispielsweise nut- oder zackenförmige Ausnehmungen weiterverbessert werden. Desweiteren können diese Öffnungen auch polygonalen. beispielsweise prismatischen, quadratischen oder hexagonalen Querschnitt aufweisen. Für die Maße der in den Kunststoff eingearbeiteten Öffnungen gilt wie bei der Ausführungsform mit beweglichen Kunststoffeinlagen der Grundsatz, daß zweckmäßig ein Spielraum für das eingelegte Werkstück belassen wird. Allgemein hat es sich z.B. bei runden Werkstücken bewährt, wenn diese in Ruhelage von einem Spalt von 0,1-2 mm Breite umgeben sind.Another possible embodiment of a carrier disk for carrying out the method according to the invention, which can also be used advantageously for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which have openings for receiving the or workpieces to be machined are provided. The fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate. Another possibility is to first pour the openings of the base plate, for example by injection molding, with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate. Furthermore, these openings can also be polygonal. for example, have a prismatic, square or hexagonal cross section. Applies for the dimensions of the incorporated into the plastic of openings as in the embodiment with movable K unststoffeinlagen the principle that a clearance appropriate for the inserted workpiece is left. In general, it has proven itself, for example, for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.

Eine weiteremögliche Ausführungsform einer Trägerscheibe zur Durchführung des erfindungsgemäßen Verfahrens besteht aus einer runden Grundplatte aus Kunststoff, welche zur Aufnahme der abtragend zu bearbeitenden Werkstücke geeignete Öffnungen besitzt und von einem Ring aus Metall umgeben ist, auf den die Antriebseinheit einwirkt. Bei solchen Trägerscheiben hat sich eine feste Verbindung zwischen Metall-und Kunststoffteil bewährt, um eine zuverlässige Übertragung der durch den Antrieb vorgegebenen Drehbewegung auf den Innenbereich der Trägerscheibe zu gewährleisten. Die Verbindung kann beispielsweise durch Verkleben und/oder die Gestaltung des inneren Randes des Metallringes unterstützt werden, beispielsweise indem über z.B. nut- oder zackenförmige Ausnehmungen der Metallring und die Kunststoffgrundplatte miteinander verzahnt werden. Auch ein polygonartiger, z.B. hexagonaler Innenumfang des Metallringes und ein entsprechend geformter Außenumfang der Grundplatte aus Kunststoff sind denkbar.Another possible embodiment of a carrier disk for carrying out the method according to the invention consists of a round base plate made of plastic, which has suitable openings for receiving the workpieces to be machined and is surrounded by a ring made of metal, on which the drive unit acts. With such carrier disks, a firm connection between the metal and plastic part has proven itself in order to ensure reliable transmission of the rotational movement predetermined by the drive to the inner region of the carrier disk. The connection can be supported for example by gluing and / or the design of the inner edge of the metal ring, for example by using e.g. groove or serrated recesses of the metal ring and the plastic base plate are interlocked. Also a polygonal, e.g. hexagonal inner circumference of the metal ring and a correspondingly shaped outer circumference of the base plate made of plastic are conceivable.

Für die Herstellung kommt z.B. die Methode in Frage, den Innenraum des vorgegebenen, aus beispielweise Stahlblech gestanzten, umgebenden Ringes mit Hilfe des Spritzgußverfahrens mit einer Kunststoff platte aus beispielsweise Polypropylen auszufüllen und aus dieser dann die Öffnungen für die Werkstücke in der geeigneten Größe, d.h. mit Spielraum auszustanzen. Eine andere Möglichkeit besteht darin, den Ring und die Grundplatte getrennt vorzufertigen und die Einzelteile erst bei Bedarf zu der gewünschten Trägerscheibe zusammenzufügen.For the production comes e.g. the method in question to fill the interior of the given ring, stamped, for example, from sheet steel, with the aid of the injection molding process, using a plastic plate made of, for example, polypropylene, and from there the openings for the workpieces of the appropriate size, i.e. to punch out with scope. Another possibility is to prefabricate the ring and the base plate separately and to assemble the individual parts to the desired carrier disk only when required.

Die hier beispielhaft beschriebenen möglichen Ausführung6formen von Trägerscheiben lassen sich problemlos in den gebräuchlichen Maschinen zum beidseitigen Polieren oder Läppen einsetzen, wobei für den eigentlichen Bearbeitungsvorgang die üblichen, dem Fachmann geläufigen Bedingungen, z.B.The possible embodiment 6 forms of carrier disks described here by way of example can be used without any problems in the conventional machines for polishing or lapping on both sides, with the usual conditions familiar to the person skilled in the art, e.g. B.

was die eingesetzte abtragende Suspension, Temperatur, Bearbeitungsdruck und dergleichen betrifft, beibehalten oder angepaßt werden können. Gegebenenfalls sind vor dem ersten Einsatz die Trägerscheibeneiner vergieichmäßigenden Behandlung, beispielsweise durch Läppen, zu unterziehen, um etwaige Dickeunterschiede zwischen Metall- und Kunststoffbestandteilen auszugleichen. Zumeist können jedoch Dickeunterschiede bis zu + 5 % der Gesamtdicke toleriert werden.as far as the abrasive suspension used, temperature, processing pressure and the like are concerned, can be maintained or adjusted. If necessary, the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components. However, differences in thickness of up to + 5% of the total thickness can usually be tolerated.

Mit Hilfe des erfindungsgemäßen Verfahrens gelingt es beim beidseitigen Läppen und/oder Polieren,insbesondere von Halbleiterscheiben,Verluste an im Randbereich beschädigten Scheiben deutlich verringern und dabei Standzeiten für Trägerscheiben zu erreichen, die denen von Ganzmetallträgerscheiben entsprechen.With the aid of the method according to the invention, lapping and / or polishing on both sides, in particular of semiconductor wafers, significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.

Im folgenden wird das Verfahren anhand von Vergleichsbeispielen näher erläutert:The process is explained in more detail below with reference to comparative examples:

Beispiel 1example 1

Eine handelsübliche Apparatur zum beidseitigen Polieren von Halbleiterscheiben wurde mit 27 Siliciumscheiben (Durchmesser 76,2 mm, Scheibendicke 450 µm) beladen, wobei jeweils 3 Scheiben in die Öffnungen je einer von insgesamt 9 aufgelegten, außenverzahnten, und mittels Planetengetriebe angetriebenen Trägerscheiben aus Stahlblech (Dicke 380 pm, Zugfestigkeit 2000 N/mm2) eingelegt wurden.A commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 µm), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 pm, tensile strength 2000 N / mm 2 ) were inserted.

Während des 30-minütigen Poliervorganges wurde als Poliermittel ein handelsübliches SiO2-Sol zugeführt und eine Temperatur von ca. 40°C eingehalten; derPolierdruck betrug 0,5 bar (bezogen auf cm2 Scheibenfläche). Die beiden mit Poliertüchern aus Polyesterfilz belegten Polierplatten rotierten gegensinnig mit je 50 UPM; die Drehzahl der Trägerscheiben betrug 20 UPM.During the 30-minute polishing process, a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area). The two polishing plates covered with polishing cloths made of polyester felt rotated in opposite directions with 50 RPM each; the speed of the carrier disks was 20 rpm.

Nach Beendigung des Polierens wurden die Scheiben entnommen und im Randbereich mikroskopisch bei 40-bis 100-facher Vergrößerung untersucht. Sämtliche Scheiben wiesen deutliche Beschädigungen auf und konnten nicht mehr weiter verwendet werden.After the polishing was completed, the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.

Nach 50 Polierfahrten wurde die Trägerscheibe wegen des Verschleißes der Außenverzahnung ausgewechselt.After 50 polishing runs, the carrier washer was replaced due to wear on the external teeth.

Beispiel 2Example 2

In derselben Apparatur wurden erneut 27 Siliciumscheiben derselben Spezifikation poliert. Dabei wurden in der erfindungsgemäßen Weise Trägerscheiben eingesetzt, die aus Stahlblech (Dicke 380 pm, Zugfestigkeit 2000 N/mm2) gefertigt waren,und in deren runde, ausgestanzte Öffnungen (Innendurchmesser 85 mm) zur Aufnahme der Scheiben zusätzlich ein aus 380 µm dicker PVC-folie ausgestanzter Ring (Außendurchmesser 84,8 mm, Innendurchmesser 77 mm, Elastizitätsmodul 1,5·103 N/mm2) eingelegt war. Damit stand sowohl den Scheiben als auch dem Ring ein ausreichender Spielraum für Eigenbewegungen zur Verfügung.27 silicon wafers of the same specification were polished again in the same apparatus. Carrier washers were used in the manner according to the invention, which were made of sheet steel (thickness 380 pm, tensile strength 2000 N / mm 2 ), and in their round, punched openings (inner diameter 85 mm) for receiving the washers an additional of 380 microns thick PVC - Foil punched ring (outer diameter 84.8 mm, inner diameter 77 mm, modulus of elasticity 1.5 · 10 3 N / mm 2 ) was inserted. This gave both the discs and the ring sufficient scope for their own movements.

Nach dem unter ansonsten genau gleichen Bedingungen durchgeführten Poliervorgang wurden die Scheiben ebenfalls entnommen und unter dem Mikroskop im Randbereich untersucht. Bei 40- bis 100-facher Vergrößerung konnten keinerlei Beschädigungen festgestellt werden, so daß sich sämtliche Scheiben weiterverwenden ließen.After the polishing process, which was otherwise carried out under exactly the same conditions, the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.

Nach 50 Polierfahrten ohne Wechsel der PVC-Ringe machte der Verschleiß an der Außenverzahnung einen Wechsel der Trägerscheibe erforderlich.After 50 polishing runs without changing the PVC rings, the wear on the external toothing made it necessary to change the carrier disc.

Claims (7)

l.) Verfahren zum beidseitigen abtragenden Bearbeiten von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben, bei welchem die Werkstücke, welche in die Öffnungen einer durch eine an ihrem Außenumfang angreifende Antriebseinheit in Drehung versetzten, geringere Dicke als das Werkstück aufweisenden Trägerscheibe eingelegt sind, unter Zusatz einer abtragend wirkenden Suspension einer kreisenden Bewegung zwischen über ihre Ober- und Unterseite bewegten Flächengebilden unterworfen werden, dadurch gekennzeichnet, daß Trägerscheiben eingesetzt werden, bei denen zumindest der Außenumfang aus einem Werkstoff mit einer Zugfestigkeit von mindestens 100 N/mm2 gefertigt ist, während im mit dem Außenumfang des Werkstückes in Kontakt kommenden Bereich ein Kunststoff mit einem Elastizitätsmodul von 1,0 bis 8·104 N/mm 2 vorgesehen ist.l.) Method for the machining of disk-shaped workpieces on both sides, in particular semiconductor wafers, in which the workpieces, which are inserted into the openings of a carrier disk having a smaller thickness than the workpiece, which is set into rotation by a drive unit acting on its outer circumference, with the removal of a workpiece acting suspension are subjected to a circular movement between moving over their top and bottom surfaces, characterized in that carrier disks are used in which at least the outer circumference is made of a material with a tensile strength of at least 100 N / mm 2 , while in the A plastic with an elastic modulus of 1.0 to 8 · 10 4 N / mm 2 is provided on the outer circumference of the workpiece coming into contact. 2.) Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß als Werkstoff mit einer Zugfestigkeit von mindestens 100 N/mm2 ein Metall eingesetzt wird.2.) Method according to claim 1, characterized in that a metal is used as the material with a tensile strength of at least 100 N / mm 2 . 3.) Verfahren nach den Ansprüchen 1 und 2, dadurch gekennzeichnet, daß als Werkstoff Stahl ausgewählt wird.3.) Process according to claims 1 and 2, characterized in that steel is selected as the material. 4.) Verfahren nach einem oder mehreren der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der Kunststoff ausgewählt wird aus der Gruppe Polyvinylchlorid, Polyethylen, Polypropylen, Polytetrafluorethylen.4.) Method according to one or more of claims 1 to 3, characterized in that the plastic is selected from the group polyvinyl chloride, polyethylene, polypropylene, polytetrafluoroethylene. 5.) Trägerscheibe zur Durchführung des Verfahrens nach einem oder mehreren der Ansprüche 1 bis 4, gekennzeichnet durch eine mit kreisförmigen Öffnungen versehene runde Grundplatte aus Metall sowie in diese Öffnungen nahezu paßgerecht eingelegte, drehbare, mit zur Aufnahme des abtragend zu bearbeitenden Werkstückes geeigneten Öffnungen versehene Flächengebilde aus Kunststoff mit kreisförmigem Außenumfang.5.) Carrier disc for carrying out the method according to one or more of claims 1 to 4, characterized by a circular base plate provided with circular openings made of metal and in these openings almost fitted, rotatable, provided with openings suitable for receiving the workpiece to be machined Plastic sheet with a circular outer circumference. 6.) Trägerscheibe zur Durchführung des Verfahrens nach einem oder mehreren der Ansprüche 1 bis 4, gekennzeichnet durch eine mit kreisförmigen bis polygonalen Öffnungen versehene runde Grundplatte aus Metall sowie in diesen Öffnungen fixierte, mit zur Aufnahme des abtragend zu bearbeitenden Werkstückes geeigneten Öffnungen versehene Flächengebilde aus Kunststoff.6.) Carrier disc for carrying out the method according to one or more of claims 1 to 4, characterized by a circular base plate provided with circular to polygonal openings made of metal and fixed in these openings, provided with openings suitable for receiving the workpiece to be machined from fabric Plastic. 7.) Trägerscheibe zur Durchführung des Verfahrens nach einem oder mehreren der Ansprüche 1 bis 4, gekennzeichnet durch eine aus Kunststoff bestehende runde Grundplatte mit zur Aufnahme der abtragend zu bearbeitenden Werkstücke geeigneten Öffnungen sowie einen die Grundplatte umgebenden Ring aus Metall.7.) Carrier disk for carrying out the method according to one or more of claims 1 to 4, characterized by a round base plate made of plastic with openings suitable for receiving the workpieces to be machined and a ring made of metal surrounding the base plate.
EP86109420A 1985-07-12 1986-07-10 Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers Expired - Lifetime EP0208315B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3524978 1985-07-12
DE19853524978 DE3524978A1 (en) 1985-07-12 1985-07-12 METHOD FOR DOUBLE-SIDED REMOVAL MACHINING OF DISK-SHAPED WORKPIECES, IN PARTICULAR SEMICONDUCTOR DISCS

Publications (2)

Publication Number Publication Date
EP0208315A1 true EP0208315A1 (en) 1987-01-14
EP0208315B1 EP0208315B1 (en) 1990-09-26

Family

ID=6275644

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86109420A Expired - Lifetime EP0208315B1 (en) 1985-07-12 1986-07-10 Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers

Country Status (4)

Country Link
US (1) US4739589A (en)
EP (1) EP0208315B1 (en)
JP (1) JPS6224964A (en)
DE (2) DE3524978A1 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379214A2 (en) * 1989-01-20 1990-07-25 Nkk Corporation Method for lapping two surfaces of a titanium disk
US6416393B2 (en) 2000-04-13 2002-07-09 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for producing a semiconductor wafer
US6458688B1 (en) 1999-02-11 2002-10-01 Wacker Siltronic Gesellschaft für Halbleiter-Materialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6514424B2 (en) 2000-05-11 2003-02-04 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process
US6566267B1 (en) 1999-11-23 2003-05-20 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Inexpensive process for producing a multiplicity of semiconductor wafers
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
US6793837B2 (en) 2001-07-05 2004-09-21 Siltronic Ag Process for material-removing machining of both sides of semiconductor wafers
US6899762B2 (en) 1999-08-13 2005-05-31 Siltronic Ag Epitaxially coated semiconductor wafer and process for producing it
US6997776B2 (en) 2004-01-29 2006-02-14 Siltronic Ag Process for producing a semiconductor wafer
US8398878B2 (en) 2009-06-17 2013-03-19 Siltronic Ag Methods for producing and processing semiconductor wafers
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
US10189142B2 (en) 2012-12-04 2019-01-29 Siltronic Ag Method for polishing a semiconductor wafer
DE102007056628B4 (en) 2007-03-19 2019-03-14 Siltronic Ag Method and apparatus for simultaneously grinding a plurality of semiconductor wafers
DE102018202059A1 (en) 2018-02-09 2019-08-14 Siltronic Ag Method for polishing a semiconductor wafer
WO2020064282A1 (en) 2018-09-25 2020-04-02 Siltronic Ag Method for polishing a semiconductor wafer

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373265A (en) * 1989-05-02 1991-03-28 Sekisui Chem Co Ltd Carrier for holding body to be polished and manufacture thereof
USRE37997E1 (en) 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
DE4011993A1 (en) * 1990-04-12 1991-10-17 Wacker Chemitronic Single-sided polished semiconductor disc mfg. system - uses upper and lower polishing surfaces for polishing opposing pairs of discs
US5140782A (en) * 1990-10-29 1992-08-25 Honore Mecteau Tool and method for forming a lens
US5314107A (en) * 1992-12-31 1994-05-24 Motorola, Inc. Automated method for joining wafers
US5695392A (en) * 1995-08-09 1997-12-09 Speedfam Corporation Polishing device with improved handling of fluid polishing media
MY129961A (en) * 1996-02-01 2007-05-31 Shinetsu Handotai Kk Double side polishing machine and method of polishing opposite sides of a workpiece using the same
US5876273A (en) * 1996-04-01 1999-03-02 Kabushiki Kaisha Toshiba Apparatus for polishing a wafer
JPH10180624A (en) * 1996-12-19 1998-07-07 Shin Etsu Handotai Co Ltd Device and method for lapping
US6241582B1 (en) 1997-09-01 2001-06-05 United Microelectronics Corp. Chemical mechanical polish machines and fabrication process using the same
US6062963A (en) * 1997-12-01 2000-05-16 United Microelectronics Corp. Retainer ring design for polishing head of chemical-mechanical polishing machine
DE19756537A1 (en) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Process for achieving wear behavior that is as linear as possible and tool with wear behavior that is as linear as possible
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6089961A (en) * 1998-12-07 2000-07-18 Speedfam-Ipec Corporation Wafer polishing carrier and ring extension therefor
US6419555B1 (en) 1999-06-03 2002-07-16 Brian D. Goers Process and apparatus for polishing a workpiece
DE19958077A1 (en) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Process for polishing both sides of semiconductor wafers comprises simultaneously polishing and treating the front side and the rear side of the wafers, transferring to an aqueous bath, and cleaning and drying
DE10004578C1 (en) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Production of a semiconductor wafer comprises polishing the edges of the wafer with a cloth with the continuous introduction of an alkaline polishing agent using polishing plates, wetting with a film and cleaning and drying
DE10012840C2 (en) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Process for the production of a large number of polished semiconductor wafers
US6454635B1 (en) 2000-08-08 2002-09-24 Memc Electronic Materials, Inc. Method and apparatus for a wafer carrier having an insert
DE10228441B4 (en) * 2001-07-11 2005-09-08 Peter Wolters Werkzeugmaschinen Gmbh Method and device for automatically loading a double-sided polishing machine with semiconductor wafers
DE10250823B4 (en) * 2002-10-31 2005-02-03 Siltronic Ag Carrier and method for simultaneous two-sided machining of workpieces
US7522421B2 (en) * 2004-09-03 2009-04-21 Entorian Technologies, Lp Split core circuit module
US7324352B2 (en) 2004-09-03 2008-01-29 Staktek Group L.P. High capacity thin module system and method
US7443023B2 (en) 2004-09-03 2008-10-28 Entorian Technologies, Lp High capacity thin module system
US7423885B2 (en) * 2004-09-03 2008-09-09 Entorian Technologies, Lp Die module system
US7542297B2 (en) 2004-09-03 2009-06-02 Entorian Technologies, Lp Optimized mounting area circuit module system and method
US20060048385A1 (en) * 2004-09-03 2006-03-09 Staktek Group L.P. Minimized profile circuit module systems and methods
US20060053345A1 (en) * 2004-09-03 2006-03-09 Staktek Group L.P. Thin module system and method
US7468893B2 (en) * 2004-09-03 2008-12-23 Entorian Technologies, Lp Thin module system and method
US7760513B2 (en) * 2004-09-03 2010-07-20 Entorian Technologies Lp Modified core for circuit module system and method
US7606040B2 (en) * 2004-09-03 2009-10-20 Entorian Technologies, Lp Memory module system and method
US20060050492A1 (en) * 2004-09-03 2006-03-09 Staktek Group, L.P. Thin module system and method
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
US7511968B2 (en) * 2004-09-03 2009-03-31 Entorian Technologies, Lp Buffered thin module system and method
US7616452B2 (en) 2004-09-03 2009-11-10 Entorian Technologies, Lp Flex circuit constructions for high capacity circuit module systems and methods
US7606049B2 (en) * 2004-09-03 2009-10-20 Entorian Technologies, Lp Module thermal management system and method
US20060261449A1 (en) * 2005-05-18 2006-11-23 Staktek Group L.P. Memory module system and method
US7579687B2 (en) * 2004-09-03 2009-08-25 Entorian Technologies, Lp Circuit module turbulence enhancement systems and methods
US7606050B2 (en) * 2004-09-03 2009-10-20 Entorian Technologies, Lp Compact module system and method
US20060049513A1 (en) * 2004-09-03 2006-03-09 Staktek Group L.P. Thin module system and method with thermal management
US7289327B2 (en) * 2006-02-27 2007-10-30 Stakick Group L.P. Active cooling methods and apparatus for modules
DE102004054567A1 (en) * 2004-11-11 2005-12-01 Siltronic Ag Process for simultaneous two sided removal of material from semiconductor wafers has wafer between rotary working discs and direction reversal at reduced force
US7511969B2 (en) * 2006-02-02 2009-03-31 Entorian Technologies, Lp Composite core circuit module system and method
EP2097221A4 (en) 2006-11-21 2013-01-02 3M Innovative Properties Co Lapping carrier and method
DE102007013058B4 (en) 2007-03-19 2024-01-11 Lapmaster Wolters Gmbh Method for grinding several semiconductor wafers simultaneously
JP5076723B2 (en) * 2007-08-09 2012-11-21 富士通株式会社 Polishing apparatus, substrate and method for manufacturing electronic apparatus
DE102007049811B4 (en) * 2007-10-17 2016-07-28 Peter Wolters Gmbh Rotor disc, method for coating a rotor disc and method for the simultaneous double-sided material removing machining of semiconductor wafers
DE102009030292B4 (en) 2009-06-24 2011-12-01 Siltronic Ag Method for polishing both sides of a semiconductor wafer
DE102009047927A1 (en) 2009-10-01 2011-01-27 Siltronic Ag Rotor disk for supporting one or multiple disks for conditioning polishing cloth in polishing machine, has core made of material, which have high rigidity and core is fully and partially provided with coating
DE102010010885B4 (en) * 2010-03-10 2017-06-08 Siltronic Ag Method for polishing a semiconductor wafer
JP5494224B2 (en) * 2010-05-20 2014-05-14 信越半導体株式会社 Carrier for double-side polishing apparatus, double-side polishing apparatus and double-side polishing method using the same
DE102011080323A1 (en) 2011-08-03 2013-02-07 Siltronic Ag Method for simultaneously abrasive processing e.g. front surface of single crystalline silicon wafer in semiconductor industry, involves locating wafer and ring in recess of rotor disk such that edge of recess of disk guides wafer and ring
DE102012201516A1 (en) 2012-02-02 2013-08-08 Siltronic Ag Semiconductor wafer polishing method for semiconductor industry, involves performing removal polishing on front and back sides of wafer, and single-sided polishing on front side of wafer in presence of polishing agent
USD712852S1 (en) 2012-03-20 2014-09-09 Veeco Instruments Inc. Spindle key
USD726133S1 (en) 2012-03-20 2015-04-07 Veeco Instruments Inc. Keyed spindle
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
DE102012206398A1 (en) 2012-04-18 2012-06-21 Siltronic Ag Method for performing two-sided planarization of semiconductor material e.g. wafer, involves providing the insert inside recesses in rotary disc, while supplying the polishing agent in the recess
DE102012206708A1 (en) 2012-04-24 2013-10-24 Siltronic Ag Method for polishing semiconductor wafer, involves providing functional layer of polishing cloth with pores and small blind holes which are arranged in radially inward region and radially outward region
DE102012214998B4 (en) 2012-08-23 2014-07-24 Siltronic Ag Method for double-sided processing of a semiconductor wafer
DE102012218745A1 (en) 2012-10-15 2014-04-17 Siltronic Ag Method for simultaneous two-sided material-removing machining of surfaces of disc of e.g. semiconductor wafer, involves conducting disc of semiconductor material during co-material-machining of surfaces of recess in rotor disc
KR101422955B1 (en) * 2012-12-20 2014-07-23 삼성전기주식회사 Base assembly and driving device of recording disk having the same
DE102013200072A1 (en) * 2013-01-04 2014-07-10 Siltronic Ag Rotor disk for receiving single-crystal silicon, for reciprocal processing between work disk units of double-side polishing apparatus, has damping element arranged between exterior portion and inner portion and made of non-metal material
DE102013200756A1 (en) 2013-01-18 2014-08-07 Siltronic Ag Rotor disc used for double-sided polishing of semiconductor wafer e.g. silicon wafer, has lower polishing cloth that is arranged at bottom annular region, as contact surface of rotor disc
JP5847789B2 (en) * 2013-02-13 2016-01-27 信越半導体株式会社 Method for manufacturing carrier for double-side polishing apparatus and double-side polishing method for wafer
DE102013211086A1 (en) 2013-06-14 2013-11-28 Siltronic Ag Method for polishing substrate with foamed polishing cloth, involves providing polishing cloth with blind holes whose positions correspond with outlet openings such that polishing agent passes through polishing cloth
CN106181747B (en) * 2016-06-13 2018-09-04 江苏吉星新材料有限公司 A kind of large-size sapphire ultrathin double-face polishing window slice processing method
JP6777530B2 (en) * 2016-12-26 2020-10-28 クアーズテック株式会社 Polishing method
EP4212280A1 (en) 2022-01-12 2023-07-19 Siltronic AG Method of applying a polishing cloth to a polishing plate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2424835A (en) * 1945-02-10 1947-07-29 Hamilton Watch Co Method for surfacing small parts
US4319432A (en) * 1980-05-13 1982-03-16 Spitfire Tool And Machine Co. Polishing fixture
US4512113A (en) * 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2466610A (en) * 1945-11-23 1949-04-05 Prec Scient Co Specimen holder
DE1652055B2 (en) * 1967-07-20 1973-02-22 Hahn & KoIb, 7000 Stuttgart FLAT LACING MACHINE
US3691694A (en) * 1970-11-02 1972-09-19 Ibm Wafer polishing machine
US4205489A (en) * 1976-12-10 1980-06-03 Balabanov Anatoly S Apparatus for finishing workpieces on surface-lapping machines
JPS5555957U (en) * 1978-10-09 1980-04-16
JPS5741164A (en) * 1980-08-12 1982-03-08 Citizen Watch Co Ltd Dual carrier for lapping
JPS57138576A (en) * 1981-02-20 1982-08-26 Ricoh Co Ltd Lapping carrier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2424835A (en) * 1945-02-10 1947-07-29 Hamilton Watch Co Method for surfacing small parts
US4319432A (en) * 1980-05-13 1982-03-16 Spitfire Tool And Machine Co. Polishing fixture
US4512113A (en) * 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENTS ABSTRACTS OF JAPAN, Band 6, Nr. 109 (M-137)[987], 19. Juni 1982; & JP-A-57 41 164 (CITIZEN TOKEI K.K.) 08-03-1982 *
PATENTS ABSTRACTS OF JAPAN, Band 6, Nr. 240 (M-174)[1118], 27. November 1982; & JP-A-57 138 576 (RICOH K.K.) 26-08-1982 *
PATENTS ABSTRACTS OF JAPAN, Seite 170 M 76; & JP-A-51 113 294 (CITIZEN WATCH K.K.) 06-10-1976 *
WESTERN ELECTRIC, TECHNICAL DIGEST, Nr. 26, April 1977, Seiten 11,12, Western Electric, New York, US; J.T. CALLAHAN et al.: "Infrared heat-wax method of mounting crystal plates for lapping or grinding" *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379214A3 (en) * 1989-01-20 1990-10-31 Nkk Corporation Method for lapping two surfaces of a titanium disk
EP0379214A2 (en) * 1989-01-20 1990-07-25 Nkk Corporation Method for lapping two surfaces of a titanium disk
US6458688B1 (en) 1999-02-11 2002-10-01 Wacker Siltronic Gesellschaft für Halbleiter-Materialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6583050B2 (en) 1999-02-11 2003-06-24 Wacker Siltronic Gesellschaft F{dot over (u)}r Halbleitermaterialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6899762B2 (en) 1999-08-13 2005-05-31 Siltronic Ag Epitaxially coated semiconductor wafer and process for producing it
US6566267B1 (en) 1999-11-23 2003-05-20 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Inexpensive process for producing a multiplicity of semiconductor wafers
US6416393B2 (en) 2000-04-13 2002-07-09 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for producing a semiconductor wafer
US6514424B2 (en) 2000-05-11 2003-02-04 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
US6793837B2 (en) 2001-07-05 2004-09-21 Siltronic Ag Process for material-removing machining of both sides of semiconductor wafers
US6997776B2 (en) 2004-01-29 2006-02-14 Siltronic Ag Process for producing a semiconductor wafer
DE102007056628B4 (en) 2007-03-19 2019-03-14 Siltronic Ag Method and apparatus for simultaneously grinding a plurality of semiconductor wafers
US8398878B2 (en) 2009-06-17 2013-03-19 Siltronic Ag Methods for producing and processing semiconductor wafers
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
US10189142B2 (en) 2012-12-04 2019-01-29 Siltronic Ag Method for polishing a semiconductor wafer
DE102018202059A1 (en) 2018-02-09 2019-08-14 Siltronic Ag Method for polishing a semiconductor wafer
WO2020064282A1 (en) 2018-09-25 2020-04-02 Siltronic Ag Method for polishing a semiconductor wafer

Also Published As

Publication number Publication date
JPS6224964A (en) 1987-02-02
EP0208315B1 (en) 1990-09-26
DE3524978A1 (en) 1987-01-22
DE3674486D1 (en) 1990-10-31
US4739589A (en) 1988-04-26

Similar Documents

Publication Publication Date Title
EP0208315A1 (en) Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers
DE3873765T2 (en) MACHINE TOOL FOR ULTRASONIC GRINDING.
DE69734414T2 (en) Process for cutting a single crystal ingot of semiconductor material
DE68928961T2 (en) Grinding wheel with high impact resistance for in-situ grinding of rolls
DE102013219468B4 (en) A method of simultaneously separating a plurality of slices from a workpiece
EP0830228B1 (en) Metal-cutting process for machining cylindrical contours, device for carrying out the process and cutting insert therefor
DE19905737A1 (en) New double-sided polished semiconductor wafer has extremely low front face site front surface-referenced least squares ratio planarity values varying insignificantly between the wafer edge and central regions
DE112010001643T5 (en) Method for chamfering a wafer
DE102008022660A1 (en) A method of processing a lens blank and lens blank with bonding compound and block piece
DE19518708A1 (en) Grinding system e.g. for optical fibre connector
DE3742942C1 (en) Milling tool for roughing and smoothing workpieces
DE69501650T2 (en) Manufacturing process for metallic polygon mirrors
DE69004275T2 (en) Process for lapping both surfaces of a titanium disc.
DE3033944A1 (en) LAPPING DEVICE FOR THIN PLAINS AND CLAMPING DEVICE FOR THE SAME AS PART OF THE LAPPING DEVICE
DE3218953C2 (en) Method and apparatus for forming an oblique groove in a semiconductor device
DE2540430C2 (en) Method for dividing a semiconductor wafer made of single-crystal material
EP1708969A1 (en) Method for the production of color wheel segments
DE102016211709B3 (en) Apparatus and method for dressing polishing cloths
DE102014220888A1 (en) Apparatus and method for double-sided polishing of disc-shaped workpieces
DE3300860C2 (en) Inner diameter saw
DE4414373C2 (en) Semiconductor wafers with machined edges
DE10147634B4 (en) Process for the production of a semiconductor wafer
DE102016222144A1 (en) Apparatus and method for dressing polishing cloths
DE3300804C2 (en) Inner diameter saw
DE69328590T2 (en) Method and device for cutting a semiconductor wafer

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19860710

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT NL

17Q First examination report despatched

Effective date: 19880912

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT NL

ITF It: translation for a ep patent filed
REF Corresponds to:

Ref document number: 3674486

Country of ref document: DE

Date of ref document: 19901031

ET Fr: translation filed
GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19920610

Year of fee payment: 7

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19920731

Year of fee payment: 7

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19940201

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Effective date: 19940331

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19940808

Year of fee payment: 9

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19960402

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20050706

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20050728

Year of fee payment: 20

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20060709