DE1161356B - Switching and oscillating unipolar transistor and oscillator circuit with such a transistor - Google Patents

Switching and oscillating unipolar transistor and oscillator circuit with such a transistor

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Publication number
DE1161356B
DE1161356B DER28090A DER0028090A DE1161356B DE 1161356 B DE1161356 B DE 1161356B DE R28090 A DER28090 A DE R28090A DE R0028090 A DER0028090 A DE R0028090A DE 1161356 B DE1161356 B DE 1161356B
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Prior art keywords
transistor
electrode
unipolar transistor
ohmic
unipolar
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DER28090A
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German (de)
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Dr-Ing Rudolf Rost
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RUDOLF ROST DR ING
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RUDOLF ROST DR ING
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Priority to DER28090A priority Critical patent/DE1161356B/en
Priority claimed from DER28987A external-priority patent/DE1193610B/en
Publication of DE1161356B publication Critical patent/DE1161356B/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor Das hier behandelte Halbleiterbauelement hat drei Zuleitungen. Es unterscheidet sich vom normalen Verstärkertransistor dadurch, daß es nur einen sperrenden und zwei nichtsperrende übergänge hat. Derartige Halbleiterbauelemente sind bekannt und werden je nach ihrer Eigenart Unijunction-Transistor, Tecnetron, Unipolartransistor oder speichernder Schalttransistor genannt. Das hier beschriebene Halbleiterbauelement, kurz S-Transistor genannt - wobei S auf die Verwendung als Schwing- und Schalttransistor hinweist -, unterscheidet sich von diesen Trioden durch seinen Bau und seine Eigenschaften.Switching and oscillating unipolar transistor and oscillator circuit with such a transistor The semiconductor component discussed here has three leads. It differs from the normal amplifier transistor in that it only has one has locking and two non-locking transitions. Such semiconductor components are known and, depending on their characteristics, are unijunction transistor, Tecnetron, Unipolar transistor or storing switching transistor called. The one described here Semiconductor component, called S transistor for short - where S refers to the use as Oscillating and switching transistor indicates - differs from these triodes by its construction and its properties.

Im Vergleich mit dem bekannten Unijunction-Transistor bzw. der Doppelbasisdiode ist der Aufbau anders. Die ohmschen Elektroden liegen bei diesem beidseitig zur pn-Übergangselektrode, während sich bei dem S-Transistor die eine Elektrode koaxial gegenüber dem pn-Übergang befindet und punktförmig ausgebildet ist. - Im Vergleich zum Tecnetron mit seiner zylindrischen Form ist der Aufbau noch unterschiedlicher. Die halsförmige Einkerbung des Tecnetrons ist beim S-Transistor durch Vertiefungen in einer Scheibe ersetzt, in denen sich je eine Elektrode befindet. - Im Vergleich zu dem Unipolartransistor, wie er in der USA.-Patentschrift 2 750 542 beschrieben ist, besteht ein Unterschied in bezug auf die Anordnung der beiden ohmschen Elektroden, die minimal eng zusammengerückt sind und beide der pn-Elektrode gegenüberstehen. Dagegen ist beim S-Transistor nicht die flächenförmige, "sondern nur die punktförmige Elektrode dem pn-übergang, und zwar koaxial und möglichst eng gegenüberliegt. Dies führt zu einer unterschiedlichen Wirkungsweise, was auch dadurch zum Ausdruck kommt, daß die beiden ohmschen Elektroden umgekehrt gepolt sind. - Im Vergleich zum speichernden Schalttransistor (NTZ, Jg. 11, 1958, Heft 11, S. 565 bis 571) ergibt sich, daß es sich bei diesem nicht um zwei reine ohmsche Elektroden handelt. Dieses Halbleiterbauelement ist also keine Doppelbasisdiode. Die eine Elektrode besteht aus einem pn-Übergang mit zusätzlich einer ohmschen Spitze und wird folgerichtig als Kollektor bezeichnet. Dieser Kollektor weist im Vergleich zu einem normalen Verstärkertransistor eine verminderte Sperrung auf. Dies entspricht auch dem Werdegang dieses Halbleiterbauelements, das ursprünglich neben dem pn-Kollektor eine Zusatzspitze aufwies, was zum gleichen Effekt führt.In comparison with the well-known unijunction transistor or the double base diode the structure is different. The ohmic electrodes are on both sides pn junction electrode, while in the case of the S transistor one electrode is coaxial located opposite the pn junction and is punctiform. - In comparison The structure is even more different than the Tecnetron with its cylindrical shape. The neck-shaped notch of the Tecnetron is through indentations in the S transistor replaced in a disc, each with an electrode. - In comparison to the unipolar transistor as described in U.S. Pat. No. 2,750,542 there is a difference with regard to the arrangement of the two ohmic electrodes, which are moved minimally close together and both face the pn electrode. On the other hand, the S transistor is not flat, "but only punctiform The electrode is opposite the pn junction, coaxially and as closely as possible. this leads to a different mode of action, which is also expressed by that the polarity of the two ohmic electrodes is reversed. - Compared to the storing Switching transistor (NTZ, Jg. 11, 1958, Issue 11, pp. 565 to 571) shows that it this is not a question of two pure ohmic electrodes. This semiconductor device so is not a double base diode. One electrode consists of a pn junction with an additional ohmic tip and is consequently referred to as a collector. Compared to a normal amplifier transistor, this collector has a decreased blocking on. This also corresponds to the development of this semiconductor component, which originally had an additional tip in addition to the pn collector, which is the same Effect leads.

Gegenüber diesen bekannten Halbleiterbauelementen weist das beschriebene Halbleiterbauelement als besonderen Vorteil seine Entwicklungsfähigkeit, seine Einfachheit und neuartige Wirkungsweise auf, die auch dadurch zum Ausdruck kommt, daß das Bauelement ebenfalls arbeitet, wenn auch nicht mit so stark ausgeprägter fallender Kennlinie; wenn die flächenhafte ohmsche Elektrode wegfällt (F i g. 2 und 3).Compared to these known semiconductor components, what has been described Semiconductor component as a special advantage its developability, its simplicity and novel mode of action, which is also expressed by the fact that the component also works, even if not with such a pronounced falling characteristic; if the flat ohmic electrode is omitted (Figs. 2 and 3).

Ein Halbleiterblatt, das n- oder p-dotiert sein kann, ist mit koaxialen Vertiefungen 1 und 2 versehen. Die Blattdicke ist an dieser Stelle verringert und kann bis auf einige 5 oder 10 Mikron herabgedrückt werden. Eine der beiden Vertiefungen ist mit einem drei- oder fünfwertigen Metall legiert, 3, und auf diese Weise ein pn-Übergang hergestellt. Die andere Vertiefung 4 ist mit einem Mikrokontakt versehen. Der Mikrokontakt kann entweder in einem mehr oder weniger schlecht sperrenden blanken Spitzenkontakt bestehen oder besser dadurch hergestellt werden, daß der Spitzenkontakt mit einem neutralen vierwertigen Metall überzogen und mit der Unterlage legiert ist. Das Herstellen kann auch so erfolgen, daß die Vertiefung in Spuren mit einem vierwertigen Metallelement legiert ist. Der Mikrokontakt bildet dann den einen ohmschen Kontakt.A semiconductor sheet, which can be n- or p-doped, is coaxial with Wells 1 and 2 provided. The sheet thickness is reduced at this point and can be pushed down to a few 5 or 10 microns. One of the two wells is alloyed with a trivalent or pentavalent metal, 3, and this way a pn junction established. The other recess 4 is provided with a microcontact. The microcontact can either be bare in a more or less poorly blocking There are tip contact or, better still, are produced in that the tip contact coated with a neutral tetravalent metal and alloyed with the base is. The production can also be done so that the recess in tracks with a tetravalent metal element is alloyed. The microcontact then forms the one ohmic one Contact.

Der pn-Übergang und der Mikrokontakt (F i g. 3 ) werden über einen Widerstand R an eine Batterie 9 so angeschlossen, daß, bei n-dotiertem Halbleitermaterial, der Mikrokontakt den Minuspol bildet. Parallel zu dem Widerstand R wird ein Kondensator 8 gelegt. Es ergibt sich eine Sägezahnschwingung. Das zweipolige Halbleiterbauelement und die Schaltung nach der F i g. 3 gehören aber nicht zu der vorliegenden Erfindung. Wenn man ohne den Kondensator C statt der Gleichspannung eine entsprechende Wechselspannung anlegt, so erhält man eine fallende Charakteristik (10 in Fig.4). Die Charakteristik läßt sich auf eine Parallele mit dem bekannten Trichtereffekt bringen. Dieser Effekt besteht darin. daß hochg r e Spannter Wechselstrom von --einer Drahtspitze auf eine Platte, aber nicht oder nur sehr schlecht in umgekehrter Richtung fließt, wenn auch die Spize gar nicht auf der Platte aufsitzt. Dabei tritt eine fallende Charakteristik auf.The pn junction and the microcontact (FIG. 3) are connected via a Resistor R connected to a battery 9 so that, with n-doped semiconductor material, the microcontact forms the negative pole. In parallel with the resistor R is a capacitor 8 laid. A sawtooth oscillation results. The two-pole semiconductor component and the circuit according to FIG. 3 do not belong to the present one Invention. If one uses a corresponding alternating voltage instead of the direct voltage without the capacitor C is applied, a falling characteristic is obtained (10 in Fig. 4). The characteristic can be brought to a parallel with the well-known funnel effect. This effect consists in it. that high voltage alternating current from one wire tip to one Plate, however, does not flow in the opposite direction or flows only very poorly, albeit in the opposite direction the spike does not sit on the plate at all. A falling characteristic occurs on.

Beim S-Transisior wird dieser Trichtereffekt mit dem Gleichrichteeffekt des pn-Übergangs zusa. nnxengebracht. Für den pn-Übergang allein ergibt sich die bekannte Gleichrichterkennlime ( F i g. 4 ), bei Zufügung des Mikrokontaktes setzt sich der negative Ast der Kennlinie Geradlinig fort, bis die Kennlinie an einem gewissen Scheitelpunkt abbricht. Dies entspricht dem Trichtereffekt. Die Spannung bricht zusammen. Die Kurve fällt bis auf einen Umkehrpunkt ab, um dann das Aussehen einer normalen Gleichrichierkennlinie im positiven Strombereich anzunehmen. Die Koppelung von pn-Übergang und Mikrokontakt macht die Anordnung labil. Dabei hängt der Schwingungseinsatz von den äußeren elektrischen Daten, insbesondere vom Vorwiderstand R ab. Die Frequenz ist sowohl von C (8) als auch von R und der angelegten Spannung 9 abhängig. Diese Spannung wird so gepolt, daß am Mikrokontakt bei n-Dotierung des Halbleitermaterials der negative Pol liegt.With the S-Transisior, this funnel effect is combined with the rectification effect of the pn junction add. brought to life. For the pn junction alone this results known rectifier characteristics (FIG. 4), when the microcontact is added the negative branch of the characteristic curve continues in a straight line until the characteristic curve at a breaks off certain vertex. This corresponds to the funnel effect. The voltage collapses. The curve drops to a turning point and then the appearance assume a normal rectification characteristic in the positive current range. the Coupling of the pn junction and microcontact makes the arrangement unstable. It depends the use of vibrations from the external electrical data, in particular from the series resistor R off. The frequency is of both C (8) and R and the applied voltage 9 dependent. This voltage is polarized in such a way that the microcontact with n-doping of the Semiconductor material is the negative pole.

Man kann nun den Effekt noch steigern, wenn man eine weitere Basiselektrode 6 hinzufügt, die nicht koaxial, sondern ringförmig um oder seitlich vom pn-Kontakt liegt. Aus der Diode wird eine Triode ( F i g. 5 ). Der fallende Kurventeil hat jetzt am Scheitelpunkt eine Spitze (11 in F i g. 6 ). Die Triode läßt sich besser als die Diode verändern. In die zusätzliche Basisleitung 6 wird ein Widerstand R1 eingelegt, der als Mikrofon ausgebildet sein kann. In die Mikrofonkontaktzuleitung wird ein Widerstand R.., eingebaut. Es zeigt sich, daß der elektrische Effekt zwei Komponenten hat, die sich an der Form der Impulse bei R und R2 erkennen lassen.You can now increase the effect by adding another base electrode 6 adds that not coaxially, but in a ring around or to the side of the pn contact lies. The diode becomes a triode (FIG. 5). The falling part of the curve has now a point at the apex (11 in Fig. 6). The triode works better than change the diode. In the additional base line 6 is a resistor R1 inserted, which can be designed as a microphone. In the microphone contact lead a resistor R .. is installed. It turns out that the electrical effect is two Has components that can be recognized by the shape of the pulses at R and R2.

In F i g. 7 zeigt das Instrument 12 eine Sägezahnschwingung, das Instrument 13 dagegen eine Rechteckschwingung mit steilen Flanken. Man kann gleichzeitig sowohl einen Sägezahn als auch einen Rechteckimpuls abnehmen.In Fig. 7 shows the instrument 12 a sawtooth oscillation, the instrument 13, on the other hand, a square wave with steep edges. You can do both at the same time take a sawtooth as well as a square pulse.

Die F i g. 8 zeigt eine Flip-Flop-Schaltung. In Reihe mit R liegt eine zusätzliche Gleichspannung. Der Eingan,sinipL#>-z lieg', bei E oder R., die Abnahme erfolgt bei R.> über eineu Sonden üc.r.The F i g. 8 shows a flip-flop circuit. In series with R lies an additional DC voltage. The input, sinipL #> - z lie ', at E or R., die Acceptance takes place at R.> via a u probes uc.r.

Claims (5)

Patentansprüche: 1. Schaltender und s>hwinge.ider Unipolartran.-sistor mit eineni '-iüiblciterkörpdr eines Leitungstyps sowie z;-.ei ol:#nschen Elektroden und einer nichtohmschwr_ Elektrode. d a d u r c h : k c n n -z e i c 1i n e t, daß sieh der f :;.heuhafte pn-Üb:rgana an der fiichtohi.i#_.che:r Elektrode und eine ohmsche Elektrode mit einem Durchmesser der Kontaktfläche von einigen Mikron so koaxial ge-Genüber:r_=heü, daß die dazwischenliegende Halbleiterschicht eine Dicke von einigen 5 Mikron hat. Claims: 1. Switching and s> hwinge.ider unipolar transistors with a single body of one type of conduction and two electrodes and a non-ohmic electrode. d a d u r c h: k c n n -z e i c 1i n e t that see the f:;. hay-like pn-Über: rgana at the fiichtohi.i #_. che: r electrode and one Ohmic electrode with a contact area diameter of a few microns like this coaxially opposite: r_ = hot that the intermediate semiconductor layer has a thickness of some 5 microns. 2. Unipolartransistor nach Anspruch 1, dadurch gekennzeichnet, daß die ohmsche kleinflächige Elektrode anlegiert ist. 2. Unipolar transistor according to claim 1, characterized in that that the ohmic small-area electrode is alloyed. 3. Unipolartransistor nach. Anspruch 1 oder 2, dadurch gekennzichnet, daß die koaxial gegenüberliegenden Elekiroden in Vertiefungen des Halbleiterkörpers angebracht sind. 3. Unipolar transistor after. Claim 1 or 2, characterized in that the coaxially opposite electrode electrodes are mounted in depressions in the semiconductor body. 4. Unipolartransistor nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß auf der kleinflächigen ohmschen Elektrode ein Überzug aus nicht sperrendem Material angebracht ist. 4. Unipolar transistor after one of claims 1 to 3, characterized in that on the small-area ohmic electrode a coating of non-blocking material is attached. 5. Oszillatorschaltung mit einem Unipolartransistor nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß parallel zu dem Widerstand im Kreis der nichtohmschen Elektrode ein Kondensator geschaltet ist. In Betracht gezogene Druckschriften: Deutsche Auslegeschriften Nr. 1035 776, 1077 787, 1054 584; britische Patentschriften Nr. 786 281, 795 305; USA.-Patentschriften Nr. 2 750 542, 2 792 539, 2 829 992, 2 909 715, 21910 653; NTZ, Bd. 11, 1958, Heft 11, S. 565 bis 571.5. Oscillator circuit with a unipolar transistor according to one of claims 1 to 4, characterized in that a capacitor is connected in parallel to the resistor in the circle of the non-ohmic electrode. Considered publications: German Auslegeschriften Nos. 1035 776, 1077 787, 1054 584; British Patent Nos. 786 281, 795 305; U.S. Patent Nos. 2,750,542, 2,792,539 , 2,829,992, 2,909,715, 21,910,653; NTZ, Vol. 11, 1958, Issue 11, pp. 565 to 571.
DER28090A 1960-06-03 1960-06-03 Switching and oscillating unipolar transistor and oscillator circuit with such a transistor Pending DE1161356B (en)

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Application Number Priority Date Filing Date Title
DER28090A DE1161356B (en) 1960-06-03 1960-06-03 Switching and oscillating unipolar transistor and oscillator circuit with such a transistor

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Application Number Priority Date Filing Date Title
DER28090A DE1161356B (en) 1960-06-03 1960-06-03 Switching and oscillating unipolar transistor and oscillator circuit with such a transistor
DER28987A DE1193610B (en) 1960-10-28 1960-10-28 Switching and oscillating transistor
DER0033823 1962-11-06

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
GB786281A (en) * 1953-12-31 1957-11-13 Philips Electrical Ind Ltd Improvements in or relating to methods of manufacturing semiconductor systems
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
GB795305A (en) * 1953-09-03 1958-05-21 Emi Ltd Improvements relating to transistors
DE1035776B (en) * 1954-09-27 1958-08-07 Ibm Deutschland Transistor with a flat semiconductor body and several non-blocking and blocking electrodes
DE1054584B (en) * 1957-02-25 1959-04-09 Deutsche Bundespost Semiconductor arrangement for optional switching of a signal
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2910653A (en) * 1956-10-17 1959-10-27 Gen Electric Junction transistors and circuits therefor
DE1077787B (en) * 1958-06-26 1960-03-17 Deutsche Bundespost Axially symmetrical transistor in which the applied doping material of a flat alloy electrode is penetrated by a wire-shaped electrode

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
GB795305A (en) * 1953-09-03 1958-05-21 Emi Ltd Improvements relating to transistors
GB786281A (en) * 1953-12-31 1957-11-13 Philips Electrical Ind Ltd Improvements in or relating to methods of manufacturing semiconductor systems
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
DE1035776B (en) * 1954-09-27 1958-08-07 Ibm Deutschland Transistor with a flat semiconductor body and several non-blocking and blocking electrodes
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2910653A (en) * 1956-10-17 1959-10-27 Gen Electric Junction transistors and circuits therefor
DE1054584B (en) * 1957-02-25 1959-04-09 Deutsche Bundespost Semiconductor arrangement for optional switching of a signal
DE1077787B (en) * 1958-06-26 1960-03-17 Deutsche Bundespost Axially symmetrical transistor in which the applied doping material of a flat alloy electrode is penetrated by a wire-shaped electrode

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