CN202996834U - Cellular structure - Google Patents
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- CN202996834U CN202996834U CN 201220711378 CN201220711378U CN202996834U CN 202996834 U CN202996834 U CN 202996834U CN 201220711378 CN201220711378 CN 201220711378 CN 201220711378 U CN201220711378 U CN 201220711378U CN 202996834 U CN202996834 U CN 202996834U
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Abstract
Provided by the utility model is a cellular structure. A plurality of cells are arranged to form a cellular array structure to form a power semiconductor device with three ports; and any one or more of the three ports are respectively connected with resistors. Each of the cells includes: an epitaxial layer; a second type lightly-doped region, which is formed in the epitaxial layer; a first type heavily-doped region, which is formed in the second type lightly-doped region; a second type heavily-doped region, which is formed in the second type lightly-doped region; a heavily-doped region short-circuit hole, which is formed on the first type heavily-doped region and the first type heavily-doped region; a gate dielectric layer, which is formed on the surface of the epitaxial layer, the surface, adjacent to the epitaxial layer, of the second type lightly-doped region, and the surface, adjacent to the second type lightly-doped region, of a portion of the first type heavily-doped region; and a first polysilicon strip, which is formed on the gate dielectric layer. Besides, the first type heavily-doped regions and heavily-doped region short-circuit holes in all the cells enable resistors connected with a second port to be formed in an area surrounded in the second type lightly-doped region. The resistors in series connection enable an electrostatic discharge (ESD) capability to be enhanced; and ESD demands with various grades can be satisfied by slightly adjusting the cellular structure.
Description
Technical field
The utility model belongs to power semiconductor static discharge technical field, relates in particular to a kind of structure cell.
Background technology
Static discharge (Electrostatic Discharge; ESD) be the key factor that causes most of electronic building bricks to be damaged; wreck for fear of electronic building brick; Electronics Engineers have thought a lot of countermeasures; one of them mainstream thoughts is that individual devices or integrated circuit are carried out the ESD design, namely by adding the ESD guard assembly to protect the protected device of needs or integrated circuit.The ESD guard assembly that is widely adopted has diode (Diode), bipolar transistor (NPN/PNP), metal-oxide semiconductor fieldeffect transistor (MOSFET), thyristor (SCR) etc.
The people such as Edward John Coyne propose a kind of electrostatic defending assembly (referring to document 1:Edward John Coyne et al; ELECTROSTATIC PROTECTION DEVICE; In May 5; 2011; US2011/0101444A1; United States Patent), by introducing vertical NPN as the esd protection assembly, improve anti-ESD ability.In addition, the people such as Shi-Tron Lin propose a kind of closed gate MOSFET structure (referring to document 2:Shi-Tron Lin et al, DISTRIBUTED MOSFET STRUCTURE WITH ENCLOSED GATE FOR IMPROVED TRANSISTOR SIZE/LAYOUT AREA RATIO AND UNIFORM ESD TRIGGERING, In Dec 14,1999, US6,002,156, United States Patent), improve anti-ESD ability by the closed gate MOSFET structure that distributes as the ESD guard assembly.Yet the formation of these ESD guard assemblies is relatively complicated, and needs extra mask plate, has also increased cost when promoting the ESD ability.
Therefore, need to propose a kind of new power semiconductor, in prior art, the ESD guard assembly needs additionally to increase mask plate as improving anti-ESD ability to solve, and forms relatively complicated problem.
The utility model content
The purpose of this utility model is to provide a kind of structure cell, so as with the series connection resistance as a kind of ESD guard assembly, promote the ESD ability.
For addressing the above problem, the utility model provides a kind of structure cell, a plurality of described cellulars arrange form the cellular array structures and form have the first port, the power semiconductor of the second port and the 3rd port, any port or a plurality of port in described three ports connect respectively a resistance, and each described cellular comprises:
One epitaxial loayer; One Second-Type light doping section is formed in described epitaxial loayer; The first type heavily doped region and Second-Type heavily doped region are formed at respectively in described Second-Type light doping section; Heavily doped region short circuit hole is formed on described the first type heavily doped region and Second-Type heavily doped region; Gate dielectric layer is formed on the surface of part the first type heavily doped region of the Second-Type light doping section of epitaxial loayer, next-door neighbour's epitaxial loayer and next-door neighbour's Second-Type light doping section; The first polysilicon strip is formed on described gate dielectric layer; Wherein, the zone that surrounds in described Second-Type light doping section that is connected with heavily doped region short circuit hole of the first type heavily doped region in all described cellulars is the resistance that the second port connects.
Further, described power semiconductor is any one or the power semiconductor that is derived by MOSFET, IGBT and bipolar transistor in MOSFET, IGBT, bipolar transistor; Wherein, when described power semiconductor was MOSFET, the first port of described MOSFET, the second port and the 3rd port be corresponding gate terminal, source terminal and drain electrode end respectively; When described power semiconductor was IGBT, the first port of described IGBT, the second port and the 3rd port be corresponding gate terminal, emitter terminal and collector terminal respectively; When described power semiconductor was bipolar transistor, the first port of described bipolar transistor, the second port and the 3rd port be corresponding base terminal, emitter terminal and collector terminal respectively.
Further, the first type heavily doped region in all described cellulars links together, and the first type heavily doped region of one of them cellular is provided with the second port; Heavily doped region short circuit hole in all described cellulars links together, and wherein the heavily doped region short circuit hole of another cellular forms source electrode or emitter.
Further, described cellular is bar shaped, square, hexagon or circle.
Further, described cellular array structure is circular array, square array, hexagonal array.
Further, have between described the first type heavily doped region and Second-Type heavily doped region between the spacing adjusted according to the demand of anti-static-discharge capability and/or described heavily doped region short circuit hole and the first type heavily doped region and have the spacing of adjusting according to the demand of anti-static-discharge capability.
Compared with prior art, the utility model discloses by a plurality of cellulars arrange form the cellular array structures form have the first port, the power semiconductor of the second port and the 3rd port, any port or a plurality of port in described three ports connect respectively a resistance, and each described cellular comprises: an epitaxial loayer; One Second-Type light doping section is formed in described epitaxial loayer; The first type heavily doped region and Second-Type heavily doped region are formed at respectively in described Second-Type light doping section; Heavily doped region short circuit hole is formed on described the first type heavily doped region and Second-Type heavily doped region; Gate dielectric layer is formed on the surface of part the first type heavily doped region of the Second-Type light doping section of epitaxial loayer, next-door neighbour's epitaxial loayer and next-door neighbour's Second-Type light doping section; The first polysilicon strip is formed on described gate dielectric layer; Wherein, the zone that surrounds in described Second-Type light doping section that is connected with heavily doped region short circuit hole of the first type heavily doped region in all described cellulars is the resistance that the second port connects.The resistance that is connected with described the second port promotes the ESD ability as a kind of ESD guard assembly, and is not only very effective to promoting the ESD ability, and the formation of resistance need not additionally to increase mask plate and technological process, effectively reduces cost.Simultaneously, resistance sizes can just can adapt to multiple grade ESD demand by the protected device domain structure is slightly adjusted, and the flexible design degree is large.
Description of drawings
Fig. 1 is the framework schematic diagram of manufacture method that the utlity model has the power semiconductor of anti-static-discharge capability;
Fig. 2 A to Fig. 2 C is the structural representation that the utlity model has the power semiconductor of anti-static-discharge capability;
Fig. 3 to Fig. 5 is the circular array domain structure that the gate terminal series connection bar resistor that has the power semiconductor of anti-static-discharge capability in the utility model embodiment one forms grid;
Fig. 6 is the block diagram that the gate terminal series connection bar resistor of VDMOS shown in Figure 5 forms the manufacture method of grid;
Fig. 7 is the test result schematic diagram that the gate terminal series connection bar resistor of VDMOS shown in Figure 6 forms the manufacture method of grid;
Fig. 8 to Fig. 9 is the circular array domain structure that the source terminal series connection bar resistor that has the power semiconductor of anti-static-discharge capability in the utility model embodiment two forms source electrode;
Figure 10 is the block diagram that the source terminal series connection bar resistor of VDMOS shown in Figure 8 forms the manufacture method of source electrode;
Figure 11 is the test result schematic diagram that the source terminal series connection bar resistor of VDMOS shown in Figure 10 forms the manufacture method of source electrode;
Figure 12 is that the gate terminal and the source terminal that have the power semiconductor of anti-static-discharge capability in the utility model embodiment three are distinguished the circular array domain structure that series resistance forms grid and source electrode simultaneously;
Figure 13 to Figure 14 is the square array domain structure that the source terminal that has the power semiconductor of anti-static-discharge capability in the utility model embodiment four (or gate terminal, source terminal simultaneously) the square resistance of series connection forms source electrode (or grid, source electrode);
Figure 15 to Figure 16 is the hexagonal array domain structure that the power semiconductor source terminal that has anti-static-discharge capability in the utility model embodiment five (or gate terminal, source terminal simultaneously) series connection hexagon resistance forms source electrode (or grid, source electrode);
Figure 17 to Figure 18 is the square array domain structure that the power semiconductor source terminal that has anti-static-discharge capability in the utility model embodiment six (or gate terminal, source terminal simultaneously) series connection hexagon resistance forms source electrode (or grid, source electrode);
Figure 19 to Figure 20 is the square array domain structure that the power semiconductor source terminal that has anti-static-discharge capability in the utility model embodiment seven (or gate terminal, source terminal simultaneously) the circular resistance of series connection forms source electrode (or grid, source electrode);
Figure 21 to Figure 22 is the square array domain structure that the power semiconductor source terminal series connection bar resistor that has anti-static-discharge capability in the utility model embodiment eight forms source electrode (or grid, source electrode).
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.
As shown in Figure 1, the utility model provides the block diagram of the manufacture method of the power semiconductor with anti-static-discharge capability.One power semiconductor is provided in the square frame of Fig. 1, and described power semiconductor is formed by the cellular array arrangement, and described power semiconductor has the first port one ', the second port 2 ' and the 3rd port 3 '.When described the first port one ' when connecting a resistance R 1, described the second port 2 ' connection one resistance R 2, described the 3rd port 3 ' connection one resistance R 3, three current drain path I, II and III can be respectively resistance R 1, R2 and R3 by series connection, effectively limit the esd discharge instantaneous peak current and absorb part energy, forming the power semiconductor with anti-static-discharge capability.Size according to anti-ESD protective capacities, can be simultaneously the series resistance respectively of the optional two-port in described the first port, the second port and the 3rd port respectively, or the optional port series resistance in described the first port, the second port and the 3rd port, each port all can effectively limit the esd discharge instantaneous peak current and absorb part energy by the current drain path of correspondence.
Therefore, the power semiconductor with anti-static-discharge capability of the utility model formation comprises: a power semiconductor is formed by the cellular array arrangement; The first port one ', the second port 2 ' and the 3rd port 3 ', be formed at described power semiconductor; And one or more resistance, any port or a plurality of port in described three ports connect respectively a described resistance.
Further, described power semiconductor can be MOSFET (metal-oxide semiconductor fieldeffect transistor), IGBT (insulated gate bipolar transistor), bipolar transistor (NPN/PNP) and other power semiconductor that is derived by MOSFET, IGBT, bipolar transistor.Wherein, when described power semiconductor is MOSFET, the first port one of described MOSFET ', the second port 2 ' and the 3rd port 3 ' corresponding gate terminal, source terminal and drain electrode end respectively; When described power semiconductor is IGBT, the first port one of described IGBT ', the second port 2 ' and the 3rd port 3 ' corresponding gate terminal, emitter terminal and collector terminal respectively; When described power semiconductor is bipolar transistor, the first port one of described bipolar transistor ', the second port 2 ' and the 3rd port 3 ' corresponding base terminal, emitter terminal and collector terminal respectively.
The process that described cellular forms is as follows: an epitaxial loayer 6 is provided, forms a Second-Type light doping section 5 in described epitaxial loayer; Form successively from the bottom to top gate dielectric layer 7 and the first polysilicon strip 4 on described epitaxial loayer; Described the first polysilicon strip 4 of etching and gate dielectric layer 7 expose described Second-Type light doping section 5; Form one first type heavily doped region 3A and Second-Type heavily doped region 3B in described Second-Type light doping section 5; Form a heavily doped region short circuit hole 3C on described the first type heavily doped region 3A and Second-Type heavily doped region 3B.
Therefore, in the power semiconductor with anti-static-discharge capability that the utility model forms, the described cellular that provides comprises: an epitaxial loayer 6; One Second-Type light doping section 5 is formed in described epitaxial loayer 6; One first type heavily doped region 3A and Second-Type heavily doped region 3B are formed at respectively in described Second-Type light doping section 5; One heavily doped region short circuit hole 3C is formed on described the first type heavily doped region 3A and Second-Type heavily doped region 3B; Gate dielectric layer 7 is formed on the surface of part the first type heavily doped region 3A of the Second-Type light doping section 5 of described epitaxial loayer 6, next-door neighbour's epitaxial loayer 6 and next-door neighbour's Second-Type light doping section 5; The first polysilicon strip 4 is formed on described gate dielectric layer 7.
If deposition the second polysilicon strip 4 ' on described gate dielectric layer 7, establish the first port one on described the second polysilicon strip 4 ' ', at described the first port one ' in addition the upper grid 1 that forms of the second polysilicon strip 4 ', described the second polysilicon strip 4 ' is the resistance R 1 that the first port connects, described the first port one ' and the grid 1 direct electric connecting relation of nothing, as shown in Fig. 2 A.At this moment, according to the demand of anti-static-discharge capability, width and/or the spacing of described the second polysilicon strip 4 ' are adjusted, can be determined and described the first port one ' size of the resistance R 1 that is connected.
Therefore, the power semiconductor with anti-static-discharge capability that the utility model forms comprises: the first port one ', be arranged on one second polysilicon strip 4 ', described the second polysilicon strip 4 ' is formed on described gate dielectric layer 7; And grid 1, be formed at described the first port one ' in addition the second polysilicon strip 4 ' on, described the second polysilicon strip 4 ' is described resistance R 1, described the first port one ' and grid 1 is without direct electric connecting relation.Described the second polysilicon strip 4 ' has width and/or the spacing of adjusting according to the demand of anti-static-discharge capability.
If establish the second port 2 ' on described the first type heavily doped region 3A, form source electrode or emitter 2 on described heavily doped region short circuit hole 3C, described the first type heavily doped region 3A zone that surrounds in described Second-Type light doping section 5 that is connected with heavily doped region short circuit hole 3C is the resistance R 2 (as shown in Fig. 2 B or 2C) that the second port 2 ' connects, and described resistance R 2 can be N-type light dope resistance or P type light dope resistance.It is as follows that described N-type light dope resistance or P type light dope resistance form principle: when described the first type heavily doped region is the doping of n+ type, described Second-Type heavily doped region is the doping of p+ type, and described resistance R 2 is P type light dope resistance; When described the first type heavily doped region is p+ type doping, described Second-Type heavily doped region is the doping of n+ type, and described resistance R 2 is N-type light dope resistance.At this moment, according to the demand of anti-static-discharge capability adjust the space D 1 between described the first type heavily doped region 3A and Second-Type heavily doped region 3B and/or adjust described heavily doped region short circuit hole 3C and the first type heavily doped region 3A between space D 2, determine the size of the resistance R 2 of connecting with described the second port 2 '.Wherein, the difference of Fig. 2 B and Fig. 2 C is, Fig. 2 B is dissymmetrical structure about described the first type heavily doped region 3A, the power semiconductor that forms is monolateral raceway groove, the EAS of power semiconductor (pulse avalanche energy) characteristic and OFF state Leakage Current are less, and between described the second port 2 ' and source electrode or emitter 2, series resistance is R2; And Fig. 2 C is symmetrical structure about described the first type heavily doped region 3A, the power semiconductor that forms is bilateral raceway groove, the ON state current of power semiconductor is larger, between described the second port 2 ' and source electrode or emitter 2, series resistance is R2/2, and this is the result of left and right two limit symmetrical structure parallel connections.
Therefore, the power semiconductor with anti-static-discharge capability of the utility model formation comprises: the second port 2 ' is arranged on described the first type heavily doped region 3A; And source electrode or emitter 2, being formed on described heavily doped region short circuit hole 3C, described the first type heavily doped region 3A zone that surrounds in described Second-Type light doping section 5 that is connected with heavily doped region short circuit hole 3C is the resistance R 2 that the second port 2 ' connects.Have between described the first type heavily doped region 3A and Second-Type heavily doped region 3B between the space D 1 adjusted according to the demand of anti-static-discharge capability and/or described heavily doped region short circuit hole 3C and the first type heavily doped region 3A and have the space D 2 of adjusting according to the demand of anti-static-discharge capability.
In like manner, can form the 3rd port 3 ' and drain accordingly or collector electrode on described cellular, can form R3 between described the 3rd port 3 ' and described drain electrode or collector electrode 3, described resistance R 3 also can be N-type light dope resistance or P type light dope resistance.The size of the resistance R 3 that can be connected with described the 3rd port 3 ' according to the demand adjustment of anti-static-discharge capability equally.
If simultaneously at the first port one ' and the second upper series resistance of port 2 ', establish the first port one on described the second polysilicon strip 4 ' ', at described the first port one ' in addition the upper grid 1 that forms of the second polysilicon strip 4 ', described the second polysilicon strip 4 ' is the resistance R 1 that the first port connects, described the first port one ' and the grid 1 direct electric connecting relation of nothing, as shown in Fig. 2 A.At this moment, according to the demand of anti-static-discharge capability, width and/or the spacing of described the second polysilicon strip 4 ' are adjusted, can be determined and described the first port one ' size of the resistance R 1 that is connected.Simultaneously establish the second port 2 ' according to the method described above on described the first type heavily doped region 3A, the mode that forms source electrode or emitter 2 on described heavily doped region short circuit hole 3C forms the power semiconductor with anti-static-discharge capability.
Referring to Fig. 3-22, the utility model also provides a kind of manufacture method of structure cell, a plurality of described cellulars are arranged formation cellular array structure and are formed power semiconductor, described power semiconductor has the first port, the second port and the 3rd port, any port or a plurality of port in described three ports connect respectively a resistance, take described power semiconductor be MOSFET as example, describe the utility model in detail by different embodiment and how promote the ESD ability by series resistance as a kind of ESD guard assembly.
Embodiment one
Fig. 3 is to Figure 5 shows that the utility model provides the gate terminal series connection bar resistor of the power semiconductor with anti-static-discharge capability to form the circular array domain structure of grid.
To shown in Figure 5, the step that each described cellular 8 forms is as follows: an epitaxial loayer (not shown in the figures, as to see also the sign 6 in Fig. 2 A to Fig. 2 C) is provided as Fig. 3; Form a Second-Type light doping section (not shown in the figures, as to see also the sign 5 in Fig. 2 A to Fig. 2 C) in described epitaxial loayer; Form successively from the bottom to top gate dielectric layer (not shown in the figures, as to see also the sign 7 in Fig. 2 A to Fig. 2 C) and the first polysilicon strip 4 on described epitaxial loayer; Described the first polysilicon strip 4 and the gate dielectric layer of etching exposes described Second-Type light doping section; Form respectively the first type heavily doped region 3A and Second-Type heavily doped region 3B in described Second-Type light doping section; Form a heavily doped region short circuit hole 3C on described the first type heavily doped region 3A and Second-Type heavily doped region 3B; Arrange formation cellular array structure by described cellular 8 and form power semiconductor.
Described cellular 8 can be bar shaped, square, hexagon or circle.Arrange by the difference of difform described cellular 8 and can form different array structures, for example the bar shaped cellular can form square array or circular array; Square cellular can form square array; The hexagon cellular can form square array or hexagonal array; Circular cellular can form square array etc., and particular content sees also the analytic explanation of subsequent embodiment.Therefore, described cellular array structure can be circular array, square array and hexagonal array.In the present embodiment, described cellular 8 is bar shaped, and the described cellular array structure of formation is circular array.
Do again second polysilicon strip 4 ' that can mate described structure cell shape on described gate dielectric layer in described cellular array structure, draw the gate terminal (the first port one ') of described power semiconductor on the second polysilicon strip 4 ' that the end with described the first polysilicon strip 4 is connected, the other end of described the second polysilicon strip is drawn the grid 1 of described power semiconductor, and described the second polysilicon strip 4 ' becomes the resistance R 1 that the first port connects thus.
When cellular 8 adopted bar shaped as described, described the second polysilicon strip 4 ' also adopted bar shaped.Width 2B and the spacing 2A of described the second polysilicon strip 4 ' all can adjust, and as shown in Figure 3, the width 2B of described the second polysilicon strip 4 ' is narrower, spacing 2A is wider; As shown in Figure 4, the width 2B of described the second polysilicon strip 4 ' is wider, spacing 2A is narrower; As shown in Figure 5, the width 2B of described the second polysilicon strip 4 ' and resistance spacing 2A are all narrower.Therefore, according to the demand of anti-static-discharge capability, change width 2B and the spacing 2A of described the second polysilicon strip 4 ', can adjust the size of described resistance R 1.The structural representation of the manufacture method of the power semiconductor with anti-static-discharge capability shown in the domain structure corresponding diagram 2B of Fig. 3 to Fig. 5.
Specifically see the analysis of n raceway groove VDMOS gate terminal series resistance: as shown in Figure 6, the block diagram of the manufacture method of the VDMOS of a kind of 600V/30mA n-channel (n raceway groove) that the utility model provides (vertical double diffusion power field effect transistor), the resistance R G that gate terminal G has connected and formed by the second polysilicon strip 4 ', its domain structure as shown in Figure 5, in the present embodiment, 1A is gate contact region; Between gate terminal and grid 1, that series connection is resistance R G; 2A is the resistance spacing of the resistance R G that forms of the second polysilicon strip 4 ' by bar shaped, is worth to be 6um; 2B is the resistance width of the resistance R G that forms of the second polysilicon strip 4 ' by bar shaped, is worth to be 4um.Change resistance spacing 2A and the resistance width 2B of described resistance R G, can change the resistance of described resistance R G.Described the first type heavily doped region 3A is the n+ source region, and described Second-Type heavily doped region 3B is the p+ contact zone.
The test result of final ESD guard assembly as shown in Figure 7, when RG=20 Ω, ESD is lower than 100V, and the resistance sizes of described resistance R G is when changing RG=1.5K into, ESD crosses 300V, has obviously improved anti-ESD ability.
Embodiment two
Fig. 8 is to Figure 9 shows that the source terminal series connection bar resistor of the power semiconductor that the utlity model has anti-static-discharge capability forms the circular array domain structure of source electrode.
As shown in Fig. 8 and 9, the step that each described cellular 8 forms is as follows: an epitaxial loayer (not shown in the figures, as to see also the sign 6 in Fig. 2 A to Fig. 2 C) is provided; Form a Second-Type light doping section (not shown in the figures, as to see also the sign 5 in Fig. 2 A to Fig. 2 C) in described epitaxial loayer; Form successively from the bottom to top gate dielectric layer (not shown in the figures, as to see also the sign 7 in Fig. 2 A to Fig. 2 C) and the first polysilicon strip 4 on described epitaxial loayer; Described the first polysilicon strip 4 and the gate dielectric layer of etching exposes described Second-Type light doping section; Form respectively the first type heavily doped region 3A and Second-Type heavily doped region 3B in described Second-Type light doping section; Form a heavily doped region short circuit hole 3C on described the first type heavily doped region 3A and Second-Type heavily doped region 3B; Arrange formation cellular array structure by described cellular 8 and form power semiconductor; Wherein, the zone that surrounds in described Second-Type light doping section 5 that is connected with heavily doped region short circuit hole 3C of the first type heavily doped region 3A in all described cellulars 8 is the resistance R 2 that the second port 2 ' connects.
Therefore, the utility model forms a kind of structure cell, and each described cellular 8 comprises: an epitaxial loayer; One Second-Type light doping section is formed in described epitaxial loayer; The first type heavily doped region 3A and Second-Type heavily doped region 3B are formed at respectively in described Second-Type light doping section; Heavily doped region short circuit hole 3C is formed on described the first type heavily doped region 3A and Second-Type heavily doped region 3B; Gate dielectric layer is formed on the surface of part the first type heavily doped region 3A of the Second-Type light doping section of epitaxial loayer, next-door neighbour's epitaxial loayer and next-door neighbour's Second-Type light doping section; Polysilicon strip 4 is formed on described gate dielectric layer; Wherein, the zone that surrounds in described Second-Type light doping section that is connected with heavily doped region short circuit hole 3C of the first type heavily doped region 3A in all described cellulars 8 is the resistance R 2 that the second port 2 ' connects.
And the step that source terminal (the second port 2 ') forms is as follows: the first type heavily doped region 3A in all described cellulars is all connected, establish the second port 2 ' on the first type heavily doped region 3A of a described cellular, and after the heavily doped region short circuit hole 3C in all described cellulars is all connected, form source electrode on the heavily doped region short circuit hole 3C of another described cellular.
Described cellular 8 can be bar shaped, square, hexagon or circle.And described cellular array structure can be circular array, square array and hexagonal array.In the present embodiment, described cellular 8 is bar shaped, and the described cellular array structure of formation is circular array.Difform described cellular 8 is arranged by difference can form different array structures, and particular content sees also the analytic explanation of subsequent embodiment.
Has space D 1 between the first type heavily doped region 3A in described cellular and Second-Type heavily doped region 3B, can directly adjust space D 1 or indirectly change width between described the first type heavily doped region 3A and Second-Type heavily doped region 3B and adjust between the two space D 1, thereby determine the size of the resistance R 2 that is connected with described source terminal 2 '; Or adjust space D 2 between described heavily doped region short circuit hole 3C and the first type heavily doped region 3A, and deciding the size of the resistance R 2 that is connected with described source terminal 2 ', described resistance R 2 is N-type light dope resistance or P type light dope resistance.The structural representation of the power semiconductor with anti-static-discharge capability shown in the domain structure corresponding diagram 2B of Fig. 8 to Fig. 9.
Specifically see the analysis of n raceway groove VDMOS source terminal series resistance: as shown in figure 10, the block diagram of the manufacture method of a kind of 600V/30mA n-channel VDMOS that the utility model provides, at the source terminal S resistance R S that connected, its domain structure as shown in Figure 8, in the present embodiment between source terminal 2 ' and source electrode or emitter 2 the resistance R S of " S type " of series connection be P type light dope resistance; Described the first type heavily doped region 3A is the n+ source region, and its dosage is 1E16cm
-2Described Second-Type heavily doped region 3B is the p+ contact zone, and its dosage is 2E15cm
-2Described Second-Type light doping section is the p-district, and its dosage is 3E13cm
-2Described heavily doped region short circuit hole 3C is source contact area, and its width is 4um.
for example, by adjusting the space D 2 between described heavily doped region short circuit hole 3C and the first type heavily doped region 3A, decide the method for the size of series resistance between described power semiconductor source terminal 2 ' and source electrode or emitter 2 as follows: the source terminal contact zone 3C shown in Fig. 8 is narrower, and the source terminal contact zone 3C shown in Fig. 9 is wider, therefore, when described Second-Type heavily doped region 3B width is constant, because described heavily doped region short circuit hole 3C is formed on described Second-Type heavily doped region 3B, by the width between the described heavily doped region short circuit hole 3C of indirect change and the first type heavily doped region 3A, can change the spacing between described the first type heavily doped region 3A and heavily doped region short circuit hole 3C, to reach the purpose of adjusting the resistance R S size that is connected with described source terminal 2 '.
In like manner, between described power semiconductor drain electrode end and drain electrode or collector electrode, the size of series resistance R3 can also realize by the similar method of the present embodiment two, gives unnecessary details no longer one by one at this.
The test result of final ESD guard assembly as shown in figure 11, when RS=0.7K, ESD is lower than 100V, and the size of described resistance R S is when changing RS=1.4K into, ESD crosses 300V, has obviously improved anti-ESD ability.
Embodiment three
Embodiment shown in Figure 12 and embodiment one and twos' difference is to provide a kind of gate terminal and source terminal with power semiconductor of anti-static-discharge capability to distinguish the circular array domain structure that the while series resistance forms grid and source electrode.
In the present embodiment, the domain structure that embodiment one can be changed rear and embodiment two carries out combination, forms Figure 12.To theing contents are as follows that described embodiment one changes: establish the first port one on described the second polysilicon strip 4 ' ', at described the first port one ' in addition the upper grid 1 that forms of the second polysilicon strip 4 ', described the second polysilicon strip 4 ' is the resistance R 1 that the first port connects, described the first port one ' and the grid 1 direct electric connecting relation of nothing.Then, can adjust according to the mode of embodiment one size of the resistance R 1 of connecting with described gate terminal, and the size of adjusting the resistance R 2 of connecting with described source terminal according to the mode of embodiment two, give unnecessary details no longer one by one at this.
Embodiment four
Figure 13 is to provide the square array domain structure of a kind of source terminal with power semiconductor of anti-static-discharge capability (or gate terminal, source terminal simultaneously) series resistance formation to the difference of embodiment shown in Figure 14 and embodiment one or embodiment two.
In the present embodiment, each described cellular 8 is square, and described cellular 8 repeats splicing and distributes, and the described cellular array structure of formation is the square array domain structure.
If need to described source terminal series resistance, can form according to the method for embodiment two described source terminal and source electrode, as shown in figure 13, described Second-Type heavily doped region 3B is narrower, as shown in figure 14, described Second-Type heavily doped region 3B is wider, changes space D 1 between described the first type heavily doped region 3A and Second-Type heavily doped region 3B according to the mode of embodiment two, thereby can adjust the size of the resistance R 2 of connecting with described source terminal.
If also need and described gate terminal series resistance, first form second polysilicon strip 4 ' that forms a square ring on every side (indicating) of array at each described cellular, and can form resistance R 1 between the gate terminal that forms on described power semiconductor and grid according to the method for embodiment one, and the size of the adjustment resistance R 1 of connecting with described gate terminal.
Embodiment five
Figure 15 is to provide the hexagonal array domain structure of a kind of source terminal with power semiconductor of anti-static-discharge capability (or gate terminal, source terminal simultaneously) series resistance formation to the difference of embodiment shown in Figure 16 and embodiment four.
In the present embodiment, described cellular 8 is hexagon, and described cellular 8 repeats splicing and distributes, and the described cellular array structure of formation is the hexagonal array domain structure.Wherein, Figure 15 and Figure 16 part that to have intercepted described cellular array structure be the hexagonal array domain structure.
If need to described source terminal series resistance, can form according to the method for embodiment two described source terminal and source electrode, as shown in figure 15, described Second-Type heavily doped region 3B is narrower, as shown in figure 16, described Second-Type heavily doped region 3B is wider, changes space D 1 between described the first type heavily doped region 3A and Second-Type heavily doped region 3B according to the mode of embodiment two, thereby can adjust the size of the resistance R 2 of connecting with described source terminal.
If also need and described gate terminal series resistance, first form second polysilicon strip 4 ' that forms a hexagon ring-type on every side (indicating) of born of the same parents' array at each described cellular, and can form resistance R 1 between the gate terminal that forms on described power semiconductor and grid according to the method for embodiment one, and the size of the adjustment resistance R 1 of connecting with described gate terminal.
Embodiment six
Figure 17 is to provide the square array domain structure of a kind of source terminal with power semiconductor of anti-static-discharge capability (or gate terminal, source terminal simultaneously) series resistance formation to the difference of embodiment shown in Figure 180 and embodiment four.
In the present embodiment, described cellular 8 is hexagon, and described cellular 8 repeats the splicing distribution, and the described cellular array structure of formation is the square array domain structure.
If need to described source terminal series resistance, can form according to the method for embodiment two described source terminal and source electrode, as shown in figure 17, described Second-Type heavily doped region 3B is wider, as shown in figure 18, described Second-Type heavily doped region 3B is narrower, changes space D 1 between described the first type heavily doped region 3A and Second-Type heavily doped region 3B according to the mode of embodiment two, thereby can adjust the size of the resistance R 2 of connecting with described source terminal and source electrode or emitter.
If also need and described source terminal series resistance, first form second polysilicon strip 4 ' that forms a square ring on every side (indicating) of array at each described cellular, and can form resistance R 1 between the gate terminal that forms on described power semiconductor and grid according to the method for embodiment one, and the size of the adjustment resistance R 1 of connecting with described gate terminal.
Embodiment seven
Figure 19 is to provide the square array domain structure of a kind of source terminal with power semiconductor of anti-static-discharge capability (or gate terminal, source terminal simultaneously) series resistance formation to the difference of embodiment shown in Figure 20 and embodiment four.
In the present embodiment, described cellular 8 is circular, and described cellular 8 repeats splicing and distributes, and the described cellular array structure of formation is the square array domain structure.
If need to described source terminal series resistance, can form according to the method for embodiment two described source terminal and source electrode, as shown in figure 19, described Second-Type heavily doped region 3B is wider, as shown in figure 20, described Second-Type heavily doped region 3B is narrower, changes space D 1 between described the first type heavily doped region 3A and Second-Type heavily doped region 3B according to the mode of embodiment two, thereby can adjust the size of the resistance R 2 of connecting with described source terminal.
If also need and described gate terminal series resistance, first form second polysilicon strip 4 ' that forms a circular ring-type on every side (indicating) of array at each described cellular, and can form resistance R 1 between the gate terminal that forms on described power semiconductor and grid according to the method for embodiment one, and the size of the adjustment resistance R 1 of connecting with described gate terminal.
Embodiment eight
Figure 21 is to provide the another kind of technique of painting of the domain structure that a kind of source terminal with power semiconductor of anti-static-discharge capability connects bar resistor formation source electrode to embodiment shown in Figure 22 and the difference of embodiment two, the domain structure that provides with Fig. 8 in embodiment two and Fig. 9 is that circular array is similar, the domain structure that the present embodiment provides is the square array domain structure, and wherein Figure 21 is the domain structure of the monolateral raceway groove of Fig. 2 B schematic diagram; Figure 22 is the domain structure of the bilateral raceway groove of Fig. 2 C schematic diagram.Therefore, all the other contents of the domain structure that the present embodiment provides see also the content of embodiment two, give unnecessary details no longer one by one at this.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment that between each embodiment, identical similar part is mutually referring to getting final product.For embodiment disclosed system, due to corresponding with the disclosed method of embodiment, so describe fairly simple, relevant part partly illustrates referring to method and gets final product.
The professional can also further recognize, unit and the algorithm steps of each example of describing in conjunction with embodiment disclosed herein, can realize with electronic hardware, computer software or combination both, for the interchangeability of hardware and software clearly is described, composition and the step of each example described in general manner according to function in the above description.These functions are carried out with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.The professional and technical personnel can specifically should be used for realizing described function with distinct methods to each, but this realization should not thought and exceeds scope of the present utility model.
Obviously, those skilled in the art can carry out various changes and modification and not break away from spirit and scope of the present utility model utility model.Like this, if within of the present utility model these were revised and modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model also was intended to comprise these change and modification.
Claims (6)
1. structure cell, a plurality of described cellulars arrange form the cellular array structures and form have the first port, the power semiconductor of the second port and the 3rd port, any port or a plurality of port in described three ports connect respectively a resistance, it is characterized in that, each described cellular comprises:
One epitaxial loayer;
One Second-Type light doping section is formed in described epitaxial loayer;
The first type heavily doped region and Second-Type heavily doped region are formed at respectively in described Second-Type light doping section;
Heavily doped region short circuit hole is formed on described the first type heavily doped region and Second-Type heavily doped region;
Gate dielectric layer is formed on the surface of part the first type heavily doped region of the Second-Type light doping section of epitaxial loayer, next-door neighbour's epitaxial loayer and next-door neighbour's Second-Type light doping section;
The first polysilicon strip is formed on described gate dielectric layer;
Wherein, the zone that surrounds in described Second-Type light doping section that is connected with heavily doped region short circuit hole of the first type heavily doped region in all described cellulars is the resistance that the second port connects.
2. structure cell as claimed in claim 1, is characterized in that, described power semiconductor is any one or the power semiconductor that is derived by MOSFET, IGBT and bipolar transistor in MOSFET, IGBT, bipolar transistor; Wherein, when described power semiconductor was MOSFET, the first port of described MOSFET, the second port and the 3rd port be corresponding gate terminal, source terminal and drain electrode end respectively; When described power semiconductor was IGBT, the first port of described IGBT, the second port and the 3rd port be corresponding gate terminal, emitter terminal and collector terminal respectively; When described power semiconductor was bipolar transistor, the first port of described bipolar transistor, the second port and the 3rd port be corresponding base terminal, emitter terminal and collector terminal respectively.
3. structure cell as claimed in claim 1, is characterized in that, the first type heavily doped region in all described cellulars links together, and the first type heavily doped region of one of them cellular is provided with the second port; Heavily doped region short circuit hole in all described cellulars links together, and wherein the heavily doped region short circuit hole of another cellular forms source electrode or emitter.
4. structure cell as claimed in claim 1, is characterized in that, described cellular is bar shaped, square, hexagon or circle.
5. structure cell as claimed in claim 1, is characterized in that, described cellular array structure is circular array, square array, hexagonal array.
6. structure cell as claimed in claim 1, it is characterized in that having between described the first type heavily doped region and Second-Type heavily doped region between the spacing adjusted according to the demand of anti-static-discharge capability and/or described heavily doped region short circuit hole and the first type heavily doped region and have the spacing of adjusting according to the demand of anti-static-discharge capability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220711378 CN202996834U (en) | 2012-12-20 | 2012-12-20 | Cellular structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220711378 CN202996834U (en) | 2012-12-20 | 2012-12-20 | Cellular structure |
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| CN202996834U true CN202996834U (en) | 2013-06-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050491A (en) * | 2012-12-20 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Cell structure and manufacturing method thereof |
| CN103325838A (en) * | 2013-06-26 | 2013-09-25 | 株洲南车时代电气股份有限公司 | Power semiconductor chip and manufacturing method thereof |
-
2012
- 2012-12-20 CN CN 201220711378 patent/CN202996834U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050491A (en) * | 2012-12-20 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Cell structure and manufacturing method thereof |
| CN103050491B (en) * | 2012-12-20 | 2015-04-29 | 杭州士兰微电子股份有限公司 | Cell structure and manufacturing method thereof |
| CN103325838A (en) * | 2013-06-26 | 2013-09-25 | 株洲南车时代电气股份有限公司 | Power semiconductor chip and manufacturing method thereof |
| CN103325838B (en) * | 2013-06-26 | 2015-07-15 | 株洲南车时代电气股份有限公司 | Power semiconductor chip and manufacturing method thereof |
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