CN115407110A - First-order gradient series SQUID current sensor array and preparation method thereof - Google Patents
First-order gradient series SQUID current sensor array and preparation method thereof Download PDFInfo
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- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/035—Measuring direction or magnitude of magnetic fields or magnetic flux using superconductive devices
- G01R33/0354—SQUIDS
- G01R33/0358—SQUIDS coupling the flux to the SQUID
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Abstract
The application relates to a first-order gradient series SQUID current sensor array and a preparation method thereof. A first loop electrode, a first josephson structure and a second josephson structure forming a SQUID loop. And two adjacent SQUID loops are connected through the negative electrode connecting structure and the positive electrode connecting structure to form a SQUID array. The first Josephson structure and the second Josephson structure are connected through the loop electrode, so that a series inductance structure is formed in the SQUID loop. Therefore, the first-order gradient series SQUID current sensor array has a simple first-order gradient structure and a simple coupling structure, and effectively counteracts external magnetic field interference. The SQUID loop, the input coil and the feedback coil are both in a vertically overlapped coupling mode, and the SQUID loop increases the coupling area with the input coil and the feedback coil in a mode of serially connecting inductors.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a first-order gradient series SQUID current sensor array and a preparation method thereof.
Background
Superconducting quantum interference device (SQUID) current sensors have wide application in the fields of photon metering, astronomy, high-energy physics, quantum information and the like. The sensitivity of the high-performance TES detector is high, but the noise level is low, the output signal is weak, and the signal reading needs to adopt a SQUID current sensor with high current sensitivity and noise level matching. The SQUID current sensor is required for signal readout of all different types of TES detectors of different wavebands. Furthermore, SQUID current sensors have become the only means of TES detector signal readout.
However, SQUID current sensors are highly susceptible to interference from external magnetic fields during operation and are often operated with TES detectors in environments where no or poor magnetic shielding is available. The traditional SQUID current sensor is a second-order gradient structure, the design structure is complex, and coupling matching of an input coil and a SQUID loop is not facilitated.
Disclosure of Invention
In view of the above, there is a need to provide a first-order gradient serial SQUID current sensor array and a method for manufacturing the same.
The application provides a first-order gradient series SQUID current sensor array. The first-order gradient series SQUID current sensor array comprises a plurality of loop electrodes, an input coil, a feedback coil, a plurality of first Josephson structures, a plurality of second Josephson structures, a plurality of positive electrode connecting structures and a plurality of negative electrode connecting structures. Each of the loop electrodes has a first end and a second end. The input coil is disposed on a surface of the plurality of loop electrodes. And the input coil is insulated from the plurality of loop electrodes. The feedback coil and the input coil are arranged at intervals. And the feedback coil is disposed around the plurality of loop electrodes. The input coil is used for inputting superconducting transition edge detector signals. The feedback coil is used for flux locking. The first superconducting thin film structure of each of the first josephson structures is disposed at a first end of the loop electrode. The first superconducting thin film structure of each of the second josephson structures is disposed at a second end of the loop electrode. Each of the positive electrode connection structures is connected to a second end of the loop electrode. Each of the negative electrode connection structures is connected with the second superconducting thin film structure of the first Josephson structure and the second superconducting thin film structure of the second Josephson structure respectively. The negative electrode connecting structure corresponding to one loop electrode is connected with the positive electrode connecting structure corresponding to the adjacent loop electrode.
The first-order gradient series SQUID current sensor array and the preparation method thereof. One said first loop electrode, one said first josephson structure and one said second josephson structure form the main structure of the SQUID loop. Each loop electrode is a communicated loop formed by sequentially connecting a plurality of curves end to end. The input coil is arranged on the surfaces of the loop electrodes to form an up-and-down overlapped coupling structure. The upper and lower overlapping coupling structures of the input coil and the loop electrode enable the coupling of the input coil and the SQUID loop to be more matched, and the coupling coefficient is increased. Meanwhile, the input coil is connected with a superconducting transition edge detector (TES) and used for inputting TES signals. The feedback coil is arranged around the plurality of loop electrodes and the input coil, namely when the feedback coil is connected with a test system, namely the magnetic flux locking ring, the feedback coil is used for magnetic flux locking, a stable magnetic field environment is provided for the input coil and the SQUID loop, and interference generated in the detection process is avoided.
Meanwhile, the first superconducting thin film structure of each of the first josephson structures is disposed at a first end of the loop electrode. The first superconducting thin film structure of each of the second josephson structures is disposed at a second end of the loop electrode. At this time, the first superconducting thin film structure of the first josephson structure and the first superconducting thin film structure of the second josephson structure are connected through the loop electrode, so that a series inductance is formed in the SQUID loop. Thus, by connecting an inductance in series in the SQUID loop, the coupling area with the input coil and the feedback coil is increased.
And the SQUID loop formed by one first loop electrode, one first Josephson structure and one second Josephson structure adopts a first-order gradient simple structure, and is beneficial to weakening external magnetic field interference.
The first superconducting thin film structure of the first Josephson structure and the second superconducting thin film structure of the second Josephson structure are respectively connected through the cathode connecting structure. At this time, it is also understood that the second superconducting thin film structure of the first josephson structure and the second superconducting thin film structure of the second josephson structure are connected through the negative electrode connection structure. Further, the negative electrode connection structure, the first josephson structure, the second josephson structure and the loop electrode form the main structure of a SQUID loop in which two josephson junctions are connected in parallel.
One negative electrode connecting structure corresponding to the loop electrode is connected with one adjacent positive electrode connecting structure corresponding to the loop electrode, so that a plurality of SQUID loops are connected in series, and a first-order gradient series SQUID current sensor array is formed.
Therefore, the coupling area of the SQUID loop and the input coil and the feedback coil can be increased through the first-order gradient series SQUID current sensor array, and external magnetic field interference can be effectively counteracted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a first-order gradient series SQUID current sensor provided in an embodiment.
Fig. 2 is a schematic structural diagram of a first-order gradient series SQUID current sensor provided in an embodiment.
Fig. 3 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 4 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 5 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 6 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 7 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 8 is a schematic structural diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 9 is a schematic circuit diagram of a first-order gradient series SQUID current sensor array provided in an embodiment.
Fig. 10 is a schematic cross-sectional view of a first-order gradient series SQUID current sensor provided in an embodiment.
Fig. 11 is a schematic cross-sectional view of a first-order gradient series SQUID current sensor provided in an embodiment.
Description of reference numerals:
the first order gradient series SQUID current sensor array 100, a loop electrode 20, an input coil 30, a feedback coil 40, a first josephson structure 510, a second josephson structure 520, a positive electrode connection structure 710, a negative electrode connection structure 720, a first loop electrode 210, a second loop electrode 220, a first curve structure 231, a second curve structure 232, a third curve structure 233, a first port connection structure 212, a second port connection structure 211, a first input loop 310, a second input loop 320, a first feedback loop 410, a second feedback loop 420, a first termination resistor 610, a second termination resistor 620, a substrate 10, a silicon dioxide film 110, a second superconducting thin film structure 120, a first insulating structure 130, a first superconducting thin film structure 160, a connection via 140, a second insulating structure 150, a termination resistor 60, an input coil 30, a feedback coil 40, and a connection structure.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application; for example, the first doping type may be made the second doping type, and similarly, the second doping type may be made the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application, such that variations from the shapes shown are to be expected due to, for example, manufacturing techniques and/or tolerances. Thus, embodiments of the present application should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present application.
Referring to fig. 1, the present application provides a first-order gradient serial SQUID current sensor array 100. The first-order gradient series SQUID current sensor array 100 includes a plurality of loop electrodes 20, an input coil 30, a feedback coil 40, a plurality of first josephson structures 510, a plurality of second josephson structures 520, a plurality of positive electrode connection structures 710, and a plurality of negative electrode connection structures 720. Each of the loop electrodes 20 has a first end and a second end. The input coil 30 is disposed on the surface of the plurality of loop electrodes 20. And the input coil 30 is provided insulated from the plurality of loop electrodes 20. The feedback coil 40 is spaced apart from the input coil 30. And the feedback coil 40 is disposed around the plurality of loop electrodes 20. The input coil 30 is used to input superconducting transition edge detector signals. The feedback coil 40 is used for flux locking.
The first superconducting thin film structure of each of the first josephson structures 510 is disposed at a first end of the loop electrode 20. The first superconducting thin film structure of each of the second josephson structures 520 is disposed at the second end of the loop electrode 20. Each of the positive electrode connection structures 710 is connected to a second end of the loop electrode 20. Each of the negative electrode connection structures 720 is connected to the second superconducting thin film structure of the first josephson structure 510 and the second superconducting thin film structure of the second josephson structure 520, respectively. The negative electrode connecting structure 720 corresponding to one of the loop electrodes 20 is connected to the positive electrode connecting structure 710 corresponding to an adjacent one of the loop electrodes 20.
In this embodiment, the first loop electrode 20, the feedback coil 40, and the input coil 30 are all made of superconducting thin film material. One said first loop electrode 20, one said first josephson structure 510 and one said second josephson structure 520 form the main structure of the SQUID loop. Each of the loop electrodes 20 is a connected loop formed by connecting a plurality of curves end to end in sequence. The input coil 30 is disposed on the surface of the plurality of loop electrodes 20, and forms a coupling structure overlapping up and down. The upper and lower overlapping coupling structures of the input coil 30 and the loop electrode 20 enable the coupling of the input coil 30 and the SQUID loop to be more matched, and the coupling coefficient is increased. Meanwhile, the input coil 30 is connected to a superconducting transition edge detector (TES) for inputting a TES signal. The feedback coil 40 is disposed around the plurality of loop electrodes 20 and the input coil 30, that is, when the feedback coil 40 is connected to a test system, that is, a flux-locked loop, for flux-locking, a stable magnetic field environment is provided for the input coil 30 and the SQUID loop, and interference generated during the detection process is avoided. And, the isolation is used to separate the structures, so as to avoid the crosstalk of the flowing current between the structures, so that the feedback coil 40, the input coil 30 and the SQUID loop are independent from each other.
Meanwhile, the first superconducting thin film structure of each of the first josephson structures 510 is disposed at a first end of the loop electrode 20. The first superconducting thin film structure of each of the second josephson structures 520 is disposed at the second end of the loop electrode 20. At this time, the loop electrode 20 is an unclosed loop having a first end and a second end. The first superconducting thin film structure of the first josephson structure 510 and the first superconducting thin film structure of the second josephson structure 520 are connected by the loop electrode 20, so that a series inductance is formed in the SQUID loop. Thus, by connecting inductances in series in the SQUID loop, the coupling area with the input coil 30 and the feedback coil 40 is increased.
And the SQUID loop formed by one first loop electrode 20, one first josephson structure 510 and one second josephson structure 520 adopts a first-order gradient simple structure, which is beneficial to weakening the external magnetic field interference.
And the second superconducting thin film structures of the first and second josephson structures 510 and 520 are connected through the negative electrode connection structure 720. At this time, it can be understood that the second superconducting thin film structure of the first josephson structure 510 and the second superconducting thin film structure of the second josephson structure 520 are connected by the negative electrode connection structure 720. Further, the negative electrode connection structure 720, the first josephson structure 510, the second josephson structure 520, and the loop electrode 20 form the main structure of a SQUID loop in which two josephson junctions are connected in parallel.
The negative connection structure 720 corresponding to one loop electrode 20 is connected to the positive connection structure 710 corresponding to an adjacent loop electrode 20, so that a plurality of SQUID loops are connected in series, forming a first-order gradient series SQUID current sensor array 100.
Therefore, by the first-order gradient series SQUID current sensor array 100, the coupling area of the SQUID loop with the input coil 30 and the feedback coil 40 can be increased, and the external magnetic field interference can be effectively cancelled.
Referring to fig. 2, in one embodiment, each of the loop electrodes 20 includes a first loop electrode 210 and a second loop electrode 220. The second loop electrode 220 and the first loop electrode 210 are sequentially connected end to form the loop electrode 20 (see black lines in fig. 2). The second loop electrode 220 has the first end and the second end.
In this embodiment, the first loop electrode 210 and the second loop electrode 220 in fig. 2 are in the lowest gray area in fig. 2. The second loop electrode 220 and the first loop electrode 210 are sequentially connected end to form a complete connection loop. Meanwhile, the first superconducting thin film structure of each of the first josephson structures 510 is disposed at the first end of the second loop electrode 220. The first superconducting thin film structure of each of the second josephson structures 520 is disposed at the second end of the second ring electrode 220. At this time, it can be understood that the second loop electrode 220 is a bottom layer superconducting thin film of the first and second josephson structures 510 and 520. Thus, the first josephson structure 510 is connected to the underlying superconducting thin film of the second josephson structure 520 through the loop electrode 20, forming a series inductance structure, increasing the coupling area with the input coil 30 and the feedback coil 40.
In one embodiment, the second loop electrode 220 is symmetrically disposed with respect to the first loop electrode 210. When the loop electrode 20 is energized with current, the interference generated by itself can be mutually cancelled out through the symmetrical arrangement, thereby avoiding the interference generated in the detection process.
Referring to fig. 3, in one embodiment, each of the loop electrodes 20 includes a first curved structure 231, a second curved structure 232, and a third curved structure 233. The second curved structure 232 is disposed between the first curved structure 231 and the third curved structure 233. A first end of the first curvilinear structure 231 is connected to a first end of the second curvilinear structure 232. A second end of the first curvilinear structure 231 is connected to a first end of the third curvilinear structure 233. The second end of the second curvilinear structure 232 is the first end of the loop electrode 20. The second end of the third curvilinear structure 233 is the second end of the loop electrode 20.
In this embodiment, a first end of the first curved structure 231 is connected to a first end of the second curved structure 232, and a second end of the first curved structure 231 is connected to a first end of the third curved structure 233, so as to form a curved loop (as indicated by the black line in fig. 2). At this time, the loop electrode 20 having the first end and the second end is formed by the first curved structure 231, the second curved structure 232, and the third curved structure 233. The first superconducting thin film structure of the first josephson structure 510 is connected to the first end. The first superconducting thin film structure of the second josephson structure 520 is connected to the second terminal to form a series inductance structure, increasing the coupling area with the input coil 30 and the feedback coil 40.
In one embodiment, the second end of the first curvilinear structure 231 is connected to the first end of the third curvilinear structure 233 by a first port connection structure 212. And the first port connection structure 212 is disposed on the surfaces of the first curved structure 231, the second curved structure 232, and the third curved structure 233. The first port connecting structure 212 and the second curve structure 232 are disposed in an insulating manner.
In this embodiment, the first port connection structure 212 connects the second end of the first curved structure 231 with the first end of the third curved structure 233. At this time, the first curved structure 231 and the third curved structure 233 are symmetrical with respect to the third curved structure 233, so as to form a symmetrical structure, which is beneficial to offset interference caused by the self-structure. Meanwhile, the first port connection structure 212 and the second curved structure 232 are arranged in an insulating manner, and the first port connection structure 212 is connected with the first curved structure 231 and the third curved structure 233 across the second curved structure 232, so as to form the first loop electrode 210 and the second loop electrode 220 which are symmetrical.
In one embodiment, a first end of the first curvilinear structure 231 is connected to a first end of the second curvilinear structure 232 by a second port connection structure 211.
In this embodiment, the first end of the first curved structure 231 and the first end of the second curved structure 232 are sequentially connected in series end to end through the second port connection structure 211. The structure of the second port connection structure 211 is the same as that of the negative electrode connection structure 720, and the second port connection structure is used for realizing symmetrical arrangement of the structure, canceling out self-generated interference, and further avoiding generating interference in the detection process.
Therefore, the loop electrode 20 is formed by the first curved structure 231, the second curved structure 232, the third curved structure 233, the first port connection structure 212, and the second port connection structure 211 being connected in series.
Referring to fig. 4, in one embodiment, the input coil 30 includes a first input loop 310 and a second input loop 320. The first input loop 310 is disposed to be insulated from the plurality of first loop electrodes 210. The second input loop 320 is disposed to be insulated from the plurality of second loop electrodes 220. The first input loop 310 and the second input loop 320 are connected end to end in sequence to form the input coil 30.
In this embodiment, the first input loop 310 and the second input loop 320 are sequentially connected end to form the input coil 30 (see the black line marks in fig. 4). The input coil 30 is connected to a superconducting transition edge detector (TES) for inputting a TES signal. When the TES signal is input, the input current in the input coil 30 changes, so that the magnetic field changes. At the moment, the SQUID loop enters a resistance state under the action of a bias magnetic field, and the SQUID loop forms voltage bias, so that the change condition of the TES signal is obtained, and the signal reading of the TES detector is realized.
The number of turns of the input coil 30, the number of loops of the first input loop 310, and the number of loops of the second input loop 320 are all equal. As shown in fig. 4, the number of turns of the input coil 30 is 2, and the number of loops of the first input loop 310 and the number of loops of the second input loop 320 are both 2. In order to improve the coupling coefficient of the line of the input coil 30 to the SQUID loop, the number of turns of the input coil in the present application is 2 or more.
The first input loop 310 is disposed on a surface of the plurality of first loop electrodes 210 and is insulated therefrom. The second input loop 320 is disposed on a surface of the plurality of second loop electrodes 220, and is disposed in an insulating manner. At this time, the corresponding arrangement of the first input loop 310 and the plurality of first loop electrodes 210, and the corresponding arrangement of the second input loop 320 and the plurality of second loop electrodes 220 may make the upper and lower overlapping coupling structures of the input coil 30 and the plurality of loop electrodes 20 more matched. Thus, the coupling of the input coil 30 to the SQUID loop is made more matched, increasing the coupling coefficient.
Referring to fig. 5, in one embodiment, the feedback coil 40 includes a first feedback loop 410 and a second feedback loop 420. The first feedback loop 410 is disposed around a plurality of the first input loops 310. The second feedback loop 420 is disposed around a plurality of the second input loops 320. The first feedback loop 410 and the second feedback loop 420 are connected end to end in sequence to form the feedback coil 40.
In this embodiment, the first feedback loop 410 and the second feedback loop 420 are sequentially connected end to form the feedback coil 40 (as shown by the black line in fig. 5). When the feedback coil 40 is connected to the flux-locked loop, a suitable current is passed through the feedback coil 40 for flux-locking, so as to provide a stable magnetic field environment for the input coil 30 and the SQUID loop, thereby avoiding interference during detection.
The first feedback loop 410 is disposed around the first input loop 310, in which case the first feedback loop 410 is also disposed around the plurality of first loop electrodes 210. The second feedback loop 420 is disposed around the second input loop 320, in which case the second feedback loop 420 is also disposed around the plurality of second loop electrodes 220. By the surrounding arrangement of the first feedback loop 410 and the second feedback loop 420, an ambient magnetic field environment can be better provided. Meanwhile, the first feedback loop 410 and the second feedback loop 420 are respectively arranged at intervals with the first input loop 310 and the second input loop 320, so as to avoid mutual interference. The feedback coil 40, the input coil 30, and the SQUID loop are independent of each other.
Referring to fig. 6, in one embodiment, the first-order gradient series SQUID current sensor array 100 further includes a plurality of first termination resistors 610. Each of the first termination resistors 610 is connected in parallel with each of the first josephson structures 510. The first order gradient series SQUID current sensor array 100 further includes a plurality of second termination resistors 620. Each of the second termination resistors 620 is connected in parallel with each of the second josephson structures 520.
In this embodiment, the first termination resistor 610 and the second termination resistor 620 are symmetrical with respect to a vertical line, forming a symmetrical structure. Meanwhile, the first termination resistor 610 is connected in parallel with the first josephson structure 510 through a first resistor connection structure 611 and a second resistor connection structure 612, respectively.
Specifically, the first resistive connection structure 611 connects the second superconducting thin film structure 120 (upper Nb film) of the first josephson structure 510. The second resistive connection structure 612 is connected to the first superconducting thin film structure 160 (lower Nb film) of the first josephson structure 510, i.e., the loop electrode 20, to realize parallel connection.
Similarly, the second termination resistor 620 is connected in parallel with the second josephson structure 520 through a third resistor connection structure 621 and a fourth resistor connection structure 622, respectively. Specifically, the third resistive connection structure 621 connects the second superconducting thin film structure 120 (upper Nb film) of the second josephson structure 520. The fourth resistive connection structure 622 is connected to the first superconducting thin film structure 160 (lower Nb film) of the second josephson structure 520, that is, the loop electrode 20, and connected in parallel (see fig. 2).
The first termination resistor 610 and the second termination resistor 620 are used to attenuate signal reflections. The loop electrode 20, the first josephson structure 510, the second josephson structure 520, the first termination resistance 610 and the second termination resistance 620 form a complete SQUID loop.
In one embodiment, the first resistor connection structure 611, the third resistor connection structure 621 and the negative electrode connection structure 720 are the same connection structure, and respectively connect the first termination resistor 610, the second termination resistor 620, the upper Nb film of the first josephson structure 510 and the upper Nb film of the second josephson structure 520. Specifically, the first resistance connection structure 611, the third resistance connection structure 621, and the negative electrode connection structure 720 are Nb film lead layer structures.
Referring to fig. 7, in one embodiment, the first feedback loop 410 is disposed around the first input loop 310 to form a first feedback opening 411. The first input loop 310 is disposed around to form a first input opening 311. The first input opening 311 is disposed opposite to the first feedback opening 411.
In this embodiment, the first loop electrode 210 and the second loop electrode 220 form a symmetrical structure. The first loop electrode 210, the first input loop 310, and the first feedback loop 410, and the second loop electrode 220, the second input loop 320, and the second feedback loop 420, form a symmetrical structure with respect to a horizontal line.
Meanwhile, when the feedback coil 40 is disposed around the input coil 30, one of the first feedback openings 411 is formed. When the input coil 30 is insulated from the surfaces of the plurality of loop electrodes 20, one first input opening 311 is also formed. At this time, the first input opening 311 and the first feedback opening 411 are disposed opposite to each other, and may be distributed on both sides of the plurality of first loop electrodes 210. At this time, the overall structure of the first-order gradient serial SQUID current sensor array 100 forms a symmetrical structure, which can mutually cancel out the self-generated interference.
Similarly, in one embodiment, the second feedback loop 420 is disposed around the second loop electrode 220 to form a second feedback opening 421. The second input loop 320 is insulated from the surface of the second loop electrode 220 to form a second input opening 321. The second input opening 321 and the second feedback opening 421 are disposed opposite to each other on two opposite sides of the second loop electrode 220.
Symmetry of the overall structure is achieved by the first input opening 311, the first feedback opening 411, the second input opening 321, and the second feedback opening 421.
Referring to fig. 8, in one embodiment, the first feedback loop 410 and the second feedback loop 420 are connected end to end by a feedback loop connection structure 430. The first input loop 310 and the second input loop 320 are connected end to end by an input loop connection 330. The feedback loop connection structure 430 is disposed opposite the input loop connection structure 330.
The number of the input loop connection structures 330 is related to the number of turns of the input coil 30, for example, as shown in fig. 8, when the number of turns of the input coil 30 is 2 (the number of loops of the first input loop 310 and the number of loops of the second input loop 320 are both 2), the input loop connection structure 330 includes a first input loop connection structure 331, a second input loop connection structure 332, and a third input loop connection structure 333, and the number of the input loop connection structures 330 is 3.
In this embodiment, the feedback loop connecting structure 430 and the input loop connecting structure 330 are opposite to two sides of the plurality of loop electrodes 20, and respectively implement the end-to-end connection of the respective structures, so as to form the feedback coil 40 and the input coil 30. At this time, a symmetrical structure about the horizontal line and the vertical line is formed by the first feedback loop 410, the second feedback loop 420, the feedback loop connection structure 430, the first input loop 310, the second input loop 320, and the input loop connection structure 330 to cancel the self-generated interference.
In one embodiment, the superconducting quantum interferometer-based current sensor 100 further comprises a plurality of auxiliary structures. The overall structure of the current sensor 100 based on the superconducting quantum interferometer is symmetrical through an auxiliary structure, so as to counteract interference caused by the structure of the current sensor.
Thus, based on the above embodiments, the loop electrode 20, the first josephson structure 510, the second josephson structure 520, the first termination resistor 610, and the second termination resistor 620 form a SQUID loop with two josephson junctions connected in parallel. By connecting the positive electrode connection structure 710 and the negative electrode connection structure 720, a plurality of SQUID loops are connected in series, thereby forming a structure diagram shown in fig. 1 and a circuit structure shown in fig. 9. Meanwhile, the positive electrode and the negative electrode of the SQUID loop can be led out through the positive electrode connecting structure 710 and the negative electrode connecting structure 720. The positive electrode connecting structure 710 and the negative electrode connecting structure 720 can be connected with the positive electrode and the negative electrode of a power supply, so that the voltage of the SQUID loop is detected, the change condition of TES signals is further obtained, and the signal reading of the TES detector is realized.
Referring to fig. 10 and 11 (illustrating the fabrication of a SQUID array, which can also be fabricated using the present method), in one embodiment, the present application provides a method for fabricating a first-order gradient serial SQUID current sensor array, comprising:
s10, providing a substrate 10, and preparing a silicon dioxide film 110 on the surface of the substrate 10;
s20, sequentially preparing a first superconducting thin film layer, a first insulating layer and a second superconducting thin film layer on the surface, far away from the substrate 10, of the silicon dioxide thin film 110;
s30, etching the second superconducting thin film layer to the first insulating layer to form a plurality of second superconducting thin film structures 120;
s40, etching the first insulating layer to the first superconducting thin film layer to form a plurality of first insulating structures 130, where each first insulating structure 130 covers each second superconducting thin film structure 120;
s50, etching the first superconducting thin film layer to the silicon dioxide thin film 110 to form a plurality of loop electrodes 20 and a plurality of first superconducting thin film structures 160;
s60, preparing a second insulating layer on the surfaces of the silicon dioxide thin films 110, the loop electrodes 20, the first insulating structures 130, and the second superconducting thin film structures 120;
s70, etching the second insulating layer to a plurality of first superconducting thin film structures 160 and a plurality of second superconducting thin film structures 120, respectively, to form a plurality of connecting through holes 140 and a plurality of second insulating structures 150;
s80, preparing a terminal resistor 60 on the surfaces of the second insulating structures 150 between the connection through holes 140;
s90, depositing lead superconducting thin film layers on the surfaces of the plurality of connection through holes 140 and the plurality of second insulation structures 150;
and S100, etching the lead superconducting thin film layer to a plurality of second insulation structures 150 to form the input coil 30, the feedback coil 40 and a connection structure.
In this embodiment, in S20, a first superconducting thin film layer (lower Nb film) and a first insulating layer (AlO) are sequentially prepared by a magnetron sputtering method x ) And a second superconducting thin film layer (upper Nb film) to form Nb/AlO x a/Nb three-layer film.
In S30 and S40, etching the second superconducting thin film and the first insulating layer, respectivelyThe second superconducting thin film structure 120 and the first insulating structure 130 are formed. In the S40, the first insulating layer is aluminum oxide (AlO) x ) The first insulating layer (alumina) is wet-etched, so that the first insulating structure 130 completely covers the second superconducting thin film structure 120. It is understood that the area of the first insulating structure 130 is larger than that of the second superconducting thin film structure 120. The first insulating structure 130 covers the second superconducting thin film structure 120, so that the formed Nb/AlO can be ensured x the/Nb Josephson junction area does not leak laterally, which is beneficial to the quality stability of the Josephson junction in the SQUID loop.
In S50, the loop electrode 20 and the first superconducting thin film structure 160 are the same layer of superconducting thin film. The first superconducting thin film layer is etched to form a SQUID loop electrode pattern (i.e., the loop electrode 20) and a first superconducting thin film structure 160 of a josephson junction (only the first superconducting thin film structure 160 is illustrated in fig. 10 and 11). In this case, it can be understood that the first superconducting thin film structure 160 and the SQUID loop electrode pattern (i.e., the loop electrode 20) are integrated, and are formed by etching the first superconducting thin film layer. The SQUID loop pattern is structured like the loop electrode 20 in fig. 1 to 8 (the loop electrode 20, the input loop connection structure 330, the feedback loop connection structure 430, etc. in fig. 1 to 8). The first superconducting thin film structure 160, the second superconducting thin film structure 120, and the first insulating structure 130 form a josephson structure.
In S70, a plurality of the connecting vias 140 are used to deposit Nb films. The first superconducting thin film structure 160 and the SQUID loop electrode pattern (i.e., the loop electrode 20) are integrated, and are formed by etching the first superconducting thin film layer. The Nb film makes electrical connection to the loop electrode 20 (e.g., the second end of the loop electrode 20 in fig. 2) through the connection via 140 for drawing out the positive connection structure 710 in fig. 2. The Nb film can realize electrical connection with the second superconducting thin film structure 120 (an upper Nb film of a josephson junction) through the connection via 140 for drawing out the negative connection structure 720 in fig. 2. Meanwhile, the second insulating structure 150 can achieve an isolation and insulation effect between the overlapping structures in fig. 2. In S80, the termination resistor 60 includes a first termination resistor 610 and a second termination resistor 620 (see the structure in fig. 5). The termination resistor 60 is located close to the josephson junction.
In S90, a lead superconducting thin film layer, which may be an Nb film, is deposited on the surfaces of the plurality of connection through holes 140 and the second insulating structure 150. In S100, the lead superconducting thin film layer is etched to form the feedback coil 40, the input coil 30, the connection structure, and the like. The connection structure may be the connection structure described in the above embodiments, such as the positive connection structure 710, the negative connection structure 720, the first resistance connection structure 611, the second resistance connection structure 612, the third resistance connection structure 621, the fourth resistance connection structure 622, and the like shown in fig. 5 to 6.
Therefore, by the preparation method of the first-order gradient tandem SQUID current sensor array, the first insulating structure 130 covers the second superconducting thin film structure 120, so that the side leakage of the josephson junction region can be avoided, and the quality stability of the josephson junction in the SQUID is facilitated. Meanwhile, the first-order gradient series SQUID current sensor array 100 is prepared by the preparation method of the first-order gradient series SQUID current sensor array, so that the coupling area can be increased, the external magnetic field interference can be effectively counteracted, and the reading of TES signals is facilitated.
In one embodiment, the thickness of the silicon dioxide thin film 110 is 100nm to 1000nm. The thickness of the first superconducting thin film structure 160 (lower layer Nb film) is 100nm to 500nm. The first insulating structure 130 (AlO) x ) The thickness of (A) is 5nm to 30nm. The thickness of the second superconducting thin film structure 120 (upper Nb film) is 100nm to 500nm. The thickness of the second insulating structure 150 is 200nm to 600nm. The thickness of the terminal resistor 60 (PdAu thin film) is 50 nm-500 nm. The thickness of the deposited lead superconducting thin film layer (Nb thin film) is 300-800 nm.
In one embodiment, the Nb/AlO is prepared by magnetron sputtering x AlO in case of a/Nb trilayer film x The oxidation pressure of the film is 100 mTorr-5000 mTorr, and the oxidation time is 5 hours-24 hours. The Josephson junction region (the second superconducting thin film structure 120) has an area of 1 μm 2 ～100μm 2 。
Specifically, in one embodiment, the same filter coil is used for the SQUID array, which contains 2 SQUID loops. The preparation method of the first-order gradient series SQUID current sensor array comprises the following steps:
growing SiO with the thickness of 100nm 2 Preparing Nb/AlO on 2-inch monocrystal high-resistance silicon wafer 10 of film 110 by magnetron sputtering method x The thickness of the/Nb three-layer film is respectively 100nm, 5nm and 100nm. Wherein, the AlO is prepared by adopting a magnetron sputtering method x The membrane was prepared using an oxidation gas pressure of 100mTorr and an oxidation time of 5 hours.
Performing first photoetching on the basis of the steps, and etching the upper Nb film to obtain the Nb film with the area of 1 mu m 2 The second superconducting thin film structure 120.
Performing second photoetching on the basis of the steps, and etching the intermediate layer AlO by adopting wet etching x Film of forming AlO x And (4) forming a structure 130 to obtain a Josephson junction region interlayer pattern. Wherein, alO x Structure 130 completely covers upper layer pattern 120.
And carrying out third photoetching on the basis of the steps, and etching the Nb film at the lowest layer to obtain the SQUID loop pattern.
On the basis of the steps, the SiO with the thickness of 200nm is grown by adopting a low-temperature chemical vapor deposition method 2 A thin film is etched, and then a third photoetching is carried out, and SiO is etched 2 And (5) thin film forming, so as to obtain a through hole connection structure 140 of the Nb wire layer and the Nb film at the lower layer. The remaining SiO 2 The thin film is the second insulating structure 150.
On the basis of the steps, fourth photoetching is carried out, a PdAu thin film with the thickness of 50nm is prepared by adopting an electron beam evaporation method to serve as a resistance layer, and the PdAu resistance 60 is obtained by stripping.
On the basis of the steps, a 300nm thick Nb film is deposited by adopting a magnetron sputtering method, then, fifth photoetching is carried out, and the Nb film is etched, so that the feedback coil 40, the input coil 30 and the connecting structure pattern are obtained.
And scribing a 2-inch sample on the basis of the steps to obtain the first-order gradient series SQUID current sensor array.
In one embodiment, the same filter coil is used for the SQUID array, which contains 100 SQUID loops. The preparation method of the first-order gradient series SQUID current sensor array comprises the following steps:
growing SiO with the thickness of 1000nm 2 Preparing Nb/AlO on 2-inch monocrystal high-resistance silicon wafer 10 of film 110 by magnetron sputtering method x The thickness of the/Nb three-layer film is respectively 500nm, 30nm and 500nm. Wherein, the AlO is prepared by adopting a magnetron sputtering method x In the case of a film, the film was prepared under an oxidation pressure of 5000mTorr for 24 hours.
Performing first photoetching on the basis of the steps, and etching the upper Nb film to obtain the Nb-based film with the area of 100 mu m 2 The second superconducting thin film structure 120.
Performing second photoetching on the basis of the steps, and etching the intermediate layer AlO by adopting wet etching x Film of forming AlO x Structure 130. Wherein, alO x Structure 130 completely covers upper layer pattern 120.
And carrying out third photoetching on the basis of the steps, and etching the Nb film at the lowest layer to obtain the SQUID loop pattern.
On the basis of the steps, growing SiO with the thickness of 600nm by adopting a low-temperature chemical vapor deposition method 2 A thin film is etched, and then a third photoetching is carried out, and SiO is etched 2 And (5) thin film forming, thus obtaining the through hole connection structure 140 of the Nb line layer and the Nb film at the lower layer. The remaining SiO 2 The thin film is the second insulating structure 150.
On the basis of the steps, fourth photoetching is carried out, a PdAu thin film with the thickness of 500nm is prepared by adopting an electron beam evaporation method to serve as a resistance layer, and the PdAu resistance 60 is obtained by stripping.
On the basis of the steps, an Nb film with the thickness of 800nm is deposited by adopting a magnetron sputtering method, then, fifth photoetching is carried out, and the Nb film is etched, so that the feedback coil 40, the input coil 30 and the connecting structure pattern are obtained.
On the basis of the steps, 2 inches of sample is sliced to obtain a first-order gradient series SQUID current sensor array.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic depictions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features of the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.
Claims (10)
1. A first-order gradient series SQUID current sensor array, comprising:
a plurality of loop electrodes, each of the loop electrodes having a first end and a second end;
the input coil is arranged on the surfaces of the plurality of loop electrodes and is insulated from the plurality of loop electrodes;
a feedback coil spaced apart from the input coil, the feedback coil disposed around the plurality of loop electrodes;
the input coil is used for inputting superconducting transition edge detector signals, and the feedback coil is used for flux locking;
a plurality of first Josephson structures, a first superconducting thin film structure of each of the first Josephson structures being disposed at a first end of each of the loop electrodes;
a plurality of second Josephson structures, the first superconducting thin film structure of each of the second Josephson structures being disposed at the second end of each of the loop electrodes;
a plurality of positive connection structures, each of the positive connection structures being connected to a second end of each of the loop electrodes;
a plurality of negative electrode connection structures, each of the negative electrode connection structures being respectively connected to the second superconducting thin film structure of the first Josephson structure and the second superconducting thin film structure of the second Josephson structure;
the negative electrode connecting structure corresponding to one loop electrode is connected with the positive electrode connecting structure corresponding to the adjacent loop electrode.
2. The first-order-gradient series-type SQUID current sensor array of claim 1, wherein each of the loop electrodes comprises:
a first loop electrode;
the second loop electrode is sequentially connected with the first loop electrode end to form the loop electrode;
the second loop electrode has the first end and the second end.
3. The first-order gradient series SQUID current sensor array of claim 1, wherein each of the loop electrodes comprises a first curvilinear structure, a second curvilinear structure, and a third curvilinear structure;
the second curve structure is arranged between the first curve structure and the third curve structure;
a first end of the first curvilinear structure is connected with a first end of the second curvilinear structure, and a second end of the first curvilinear structure is connected with a first end of the third curvilinear structure;
the second end of the second curve structure is a first end of the loop electrode, and the second end of the third curve structure is a second end of the loop electrode.
4. The first-order-gradient series-type SQUID current sensor array of claim 3, wherein the second end of the first curvilinear structure is connected with the first end of the third curvilinear structure through a first port connection structure;
and the first port connecting structure is arranged on the surface of the first curve structure, the surface of the second curve structure and the surface of the third curve structure, and the first port connecting structure and the second curve structure are arranged in an insulating way.
5. The first-order-gradient series-type SQUID current sensor array of claim 3, wherein the first end of the first curvilinear structure is connected with the first end of the second curvilinear structure through a second port connection structure.
6. The first-order gradient series SQUID current sensor array of claim 2, wherein the input coil comprises:
a first input loop arranged to be insulated from the plurality of first loop electrodes;
a second input loop circuit insulated from the plurality of second loop circuit electrodes;
the first input loop and the second input loop are sequentially connected end to form the input coil.
7. The first-order gradient series SQUID current sensor array of claim 6, wherein the feedback coil comprises:
a first feedback loop disposed around a plurality of said first input loops;
a second feedback loop disposed around a plurality of said second input loops;
the first feedback loop and the second feedback loop are sequentially connected end to form the feedback coil.
8. The first order gradient series SQUID current sensor array of claim 1, wherein said first order gradient series SQUID current sensor array further comprises:
a plurality of first termination resistances, each said first termination resistance connected in parallel with each said first Josephson structure.
9. The first order gradient series SQUID current sensor array of claim 1, wherein the first order gradient series SQUID current sensor array further comprises:
a plurality of second termination resistances, each said second termination resistance connected in parallel with each said second Josephson structure.
10. A preparation method of a first-order gradient series SQUID current sensor array is characterized by comprising the following steps:
providing a substrate, and preparing a silicon dioxide film on the surface of the substrate;
sequentially preparing a first superconducting thin film layer, a first insulating layer and a second superconducting thin film layer on the surface of the silicon dioxide thin film, which is far away from the substrate;
etching the second layer of superconducting thin film to the first insulating layer to form a plurality of second superconducting thin film structures;
etching the first insulating layer to the first superconducting thin film to form a plurality of first insulating structures, wherein each first insulating structure covers each second superconducting thin film structure;
etching the first superconducting thin film layer to the silicon dioxide thin film to form a plurality of loop electrodes and a plurality of first superconducting thin film structures;
preparing second insulating layers on the surfaces of the silicon dioxide thin films, the surfaces of the loop electrodes, the surfaces of the first insulating structures and the surfaces of the second superconducting thin film structures;
etching the second insulating layer until the plurality of first superconducting thin film structures and the plurality of second superconducting thin film structures are etched respectively to form a plurality of connecting through holes and a plurality of second insulating structures;
preparing a terminal resistor on the surfaces of the second insulating structures among the connecting through holes;
depositing lead superconducting thin film layers on the surfaces of the connecting through holes and the second insulating structures;
and etching the lead superconducting thin film layer to a plurality of second insulation structures to form an input coil, a feedback coil and a connection structure.
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