CN115084814B - Transmit-receive front-end packaging module, preparation method and microwave communication system - Google Patents
Transmit-receive front-end packaging module, preparation method and microwave communication system Download PDFInfo
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- CN115084814B CN115084814B CN202210512705.6A CN202210512705A CN115084814B CN 115084814 B CN115084814 B CN 115084814B CN 202210512705 A CN202210512705 A CN 202210512705A CN 115084814 B CN115084814 B CN 115084814B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000004891 communication Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 214
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 230000008054 signal transmission Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
The invention provides a receiving and transmitting front end packaging module, a preparation method and a microwave communication system, wherein the receiving and transmitting front end packaging module comprises: a plurality of embedded chips embedded in the multilayer substrate and a circulator packaged with the embedded chips; the multi-layer substrate at least comprises an upper-layer substrate, a middle substrate and a lower-layer substrate, wherein a first reserved cavity is arranged on the lower-layer substrate and is used for placing a metal carrier of the circulator, a plurality of embedded cavities are arranged on the middle substrate and are used for placing embedded chips, and a second reserved cavity is also arranged on the middle substrate and is used for fixing ferrite of the circulator; an upper substrate for closing the embedded cavities is arranged on all the embedded cavities, and a permanent magnet is also arranged on the substrate on the ferrite; the second reserved cavity is communicated with the first reserved cavity; the embedded chips are electrically connected through interconnection through holes arranged on the lower substrate and the middle substrate. The transceiver front-end packaging module provided by the invention has higher integration level, and can meet the requirement of the advanced degree of a microwave communication system.
Description
Technical Field
The invention relates to the field of semiconductor chip packaging, in particular to a receiving and transmitting front end packaging module, a preparation method and a microwave communication system.
Background
The transmit-receive front-end is the portion of the phased array assembly and wireless communication system immediately following the antenna, and receives and transmits antenna signals. In general, the transmit-receive front end has a wide frequency band and high isolation, and there is a high demand for miniaturization, light weight, and high frequency integration.
At present, active chips and passive components are mounted on the surface of a circuit substrate. The active chip is selected to be semi-embedded in some microwave modules, namely, the surface of the circuit substrate is grooved, and the chip is adhered to the bottom of the groove when micro-assembly is carried out. The circulator is a multiport device, the transmission direction of electromagnetic waves can only be circularly transmitted along a single direction, and the opposite direction is isolated. Circulators become a necessary component for unidirectional transmission in modern radar and microwave multiplex communication systems.
However, in the conventional assembly, the active channels and the circulator are interconnected by bonding or welding, and the interconnection mode increases the volume of the radio frequency front end, which is not beneficial to the current requirement of miniaturization integration of the radio frequency front end.
Disclosure of Invention
The embodiment of the invention provides a receiving and transmitting front end packaging module, a preparation method and a microwave communication system, which are used for solving the problem that the integration of the existing radio frequency front end is low.
In a first aspect, an embodiment of the present invention provides a transceiver front-end package module, including: the embedded chip comprises a multilayer substrate, a plurality of embedded chips embedded in the multilayer substrate and a circulator; wherein,
The multi-layer substrate at least comprises an upper layer substrate, a middle substrate and a lower layer substrate;
The circulator comprises a metal carrier, ferrite and a permanent magnet, wherein the metal carrier is arranged in a first reserved cavity on the lower substrate, the ferrite is arranged in a second reserved cavity of the middle substrate, and the permanent magnet is arranged on the upper substrate, and the second reserved cavity is communicated with the first reserved cavity;
the embedded chip is arranged in the embedded cavity on the middle substrate, and the upper substrate seals all the embedded cavities; the embedded chips are electrically connected through interconnection through holes arranged on the lower substrate and the middle substrate.
In one possible implementation, the intermediate substrate includes at least a first intermediate substrate and a second intermediate substrate, the first intermediate substrate being located on the lower substrate, the second intermediate substrate being located on the first intermediate substrate;
The first intermediate substrate and the second intermediate substrate are provided with embedded cavities which are communicated with each other, the embedded cavities of the second intermediate substrate are provided with an upper substrate, and the second intermediate substrate on the ferrite is provided with a permanent magnet.
In one possible implementation, the opening of the buried cavity on the second intermediate substrate is larger than the opening of the buried cavity on the first intermediate substrate in communication with the buried cavity.
Alternatively, the buried cavity on the second intermediate substrate is arranged coaxially with the buried cavity on the first intermediate substrate.
In one possible implementation, a bonding pad is disposed on a bonding surface of the embedded cavity of the second intermediate substrate and the embedded cavity of the first intermediate substrate, and the bonding pad is used for bonding with the embedded chip.
In one possible implementation, the metal carrier and ferrite of the circulator are fixed by a gold-tin sintering process, and the permanent magnet is adhesively fixed by conductive adhesive.
In one possible implementation manner, three-dimensional vertical interconnection through holes which are communicated with each other are arranged on the lower substrate and the first intermediate substrate for signal transmission; and the interconnection through hole is connected with a bonding pad arranged on the bonding surface of the second intermediate substrate and the first intermediate substrate.
In one possible implementation, the pre-buried chip and the lower substrate are adhered and fixed by nano sintered silver or conductive adhesive.
In a second aspect, an embodiment of the present invention provides a method for preparing a transceiver front-end package module, including:
manufacturing a first reserved cavity on a lower substrate, manufacturing a plurality of first embedded cavities and second reserved cavities on a first intermediate substrate, and manufacturing a second embedded cavity on a second intermediate substrate;
Preparing vertical interconnection through holes at corresponding positions on the lower substrate and the first intermediate substrate, and filling conductors in the interconnection through holes;
Bonding the lower substrate, the first intermediate substrate and the second intermediate substrate to form a first packaging module; the first reserved cavity is a second reserved cavity, the first embedded cavity is a second embedded cavity, and the first embedded cavity and the second embedded cavity form a chip embedded cavity;
installing the embedded chip into the chip embedded cavity, and conducting wire bonding on the embedded chip and the first intermediate substrate to realize electrical communication;
bonding an upper substrate with the first packaging module, wherein the upper substrate seals the chip embedded cavity, and the upper substrate is not arranged on a second intermediate substrate on the second reserved cavity;
And ferrite is arranged in the second reserved cavity, a metal carrier is arranged in the first reserved cavity, and a permanent magnet is arranged on a second intermediate substrate on the ferrite.
In a third aspect, an embodiment of the present invention provides a microwave communication system, including the transceiver front-end packaging module according to the first aspect or any one of the possible implementation manners of the first aspect.
The embodiment of the invention provides a transceiver front-end packaging module, a preparation method and a microwave communication system, which are characterized in that a circulator and a pre-buried chip are packaged together, so that the integration level is high, other assembly procedures are not required to be introduced, and the matching degree of a microwave parameter design value and a theoretical value is higher.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a transceiver front-end package module according to an embodiment of the present invention;
Fig. 2A to fig. 2F are a preparation flow chart of a transceiver front-end package module according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following description will be made by way of specific embodiments with reference to the accompanying drawings.
As described in the background art, the active channels and the circulator are interconnected by bonding or welding in the conventional assembly, which cannot meet the requirement of the current rf front-end for miniaturized integration.
In addition, for some microwave modules, the active chip is selected to be semi-embedded, i.e. the surface of the substrate is grooved, and the chip is adhered to the bottom of the groove during micro-assembly. However, this does not effectively improve the surface layer wiring capability, and it is necessary to protect the circuit by means of an integrated package, a metal package, or the like after the circuit is micro-assembled. These packaging materials not only add significant weight to the circuit, but also increase process complexity and increase the process cycle and production cost of the module.
In order to solve the problems in the prior art, the embodiment of the invention provides a transceiver front-end packaging module, a preparation method and a microwave communication system, and the transceiver front-end packaging module provided by the embodiment of the invention is first described below.
A transceiver front-end package module, comprising: the multi-layer substrate comprises a plurality of embedded chips embedded in the multi-layer substrate and a circulator packaged with the embedded chips.
The multi-layer substrate at least comprises an upper layer substrate, a middle substrate and a lower layer substrate, and the circulator comprises a metal carrier, ferrite and a permanent magnet. The lower substrate is provided with a first reserved cavity for placing a metal carrier of the circulator, the middle substrate is provided with a plurality of embedded cavities for placing embedded chips, and a second reserved cavity for fixing ferrite of the circulator. All the embedded cavities are provided with an upper substrate for closing the embedded cavities, and the substrate on the ferrite is also provided with a permanent magnet. And the second reserved cavity is communicated with the first reserved cavity. The embedded chips are electrically connected through interconnection through holes arranged on the lower substrate and the middle substrate.
Specifically, the embedded chip may be one or more of a power amplifier chip, a limiting amplifier chip, a low-noise amplifier chip, etc., and the user may select according to the actual function of the required transceiver front-end packaging module, which is not limited herein. In addition, the number of the chips is not limited, and one or more chips can be selected according to actual use conditions.
In order to improve the reliability and the wiring capability of the transceiver front-end package module, the intermediate substrate may at least include a first intermediate substrate and a second intermediate substrate, where the first intermediate substrate is located on the lower substrate, and the second intermediate substrate is located on the first intermediate substrate. The first intermediate substrate and the second intermediate substrate are respectively provided with a buried cavity communicated with each other, the buried cavity of the second intermediate substrate is provided with an upper substrate, and the second intermediate substrate on the ferrite is provided with a permanent magnet.
The embedded chip is led out through the bonding lead and the interconnection through hole, so that electric connection is realized. The metal carrier, ferrite and permanent magnet together form a circulator.
The embedded cavities are arranged on the first middle substrate and the second middle substrate, and after the chip is arranged in the embedded cavity on the first middle substrate, the embedded chip is bonded with the wire on the second middle substrate in a wire bonding mode, so that the electrical communication between the embedded chip and the outside is realized. Finally, an upper substrate is arranged on the embedded cavity, so that the packaging of the embedded chip is realized, and the later packaging is not needed.
In order to facilitate bonding of the embedded chip and the wires on the second intermediate substrate, the opening of the embedded cavity on the second intermediate substrate can be larger than the opening of the embedded cavity on the first intermediate substrate, which is communicated with the embedded cavity, so that bonding is facilitated. Furthermore, in order to facilitate the installation and bonding of the embedded chips, the embedded cavity on the second intermediate substrate and the embedded cavity on the first intermediate substrate may be coaxially disposed.
And a bonding pad is arranged on the bonding surface of the embedded cavity of the second intermediate substrate and the embedded cavity of the first intermediate substrate, and the bonding pad is used for bonding with the embedded chip. Because the opening of the embedded cavity on the second intermediate substrate is larger than the opening of the embedded cavity on the first intermediate substrate communicated with the embedded cavity, bonding pads can be arranged at the bonding surfaces of the two intermediate substrates, and the embedded chip can be bonded with the bonding pads through gold wires.
The pads are electrically connected to the interconnect vias, thereby enabling the chip to be electrically connected to the outside. Specifically, three-dimensional vertical interconnection through holes which are communicated with each other are formed in the lower substrate and the first intermediate substrate and are used for signal transmission. And the interconnection through hole is connected with a bonding pad arranged on the bonding surface of the second intermediate substrate and the first intermediate substrate.
In some embodiments, the upper substrate, the middle substrate and the lower substrate are bonded by gold-gold low temperature bonding. The metal carrier and ferrite of the circulator are fixed through a gold-tin sintering process, and the permanent magnet is adhered and fixed through conductive adhesive. The embedded chip and the lower substrate are fixed by nano sintered silver or conductive adhesive.
In some embodiments, the substrate may be one or a combination of silicon substrates or silicon carbide substrates. Because the embedding cavity for installing the embedded chip is necessarily provided with the upper substrate, the ferrite is not required to be provided with the upper substrate, and therefore the sizes of the lower substrate, the first middle substrate and the second middle substrate can be the same, and the size of the upper substrate can be smaller than that of other substrates.
Fig. 1 shows a transceiver front-end package module provided by an embodiment of the present invention, which includes four layers of substrates, two embedded chips and an annular body.
The four layers of substrates are respectively a lower substrate 11, a first middle substrate 12, a second inter-substrate 13 and an upper substrate 14, and are bonded by adopting a gold-gold low-temperature bonding process. A first reserved cavity is arranged on the lower substrate 11 for mounting a metal carrier 31 of the circulator, and an interconnection through hole 21 is also arranged, and the interconnection through hole 21 is communicated with the interconnection through hole 21 on the first intermediate substrate. The interconnection via 21 is a three-dimensional vertical interconnection via, and can be used for signal transmission.
A plurality of embedded cavities are arranged on the first intermediate substrate 12 and the second intermediate substrate 13, and the embedded cavities are used for placing embedded chips. The opening of the buried cavity on the second intermediate substrate 13 is larger than the opening of the buried cavity on the first intermediate substrate 12 in communication with the buried cavity. An embedded chip is arranged in the embedded cavity on the first middle substrate 12, and the embedded chip and the lower substrate 11 are adhered and fixed by nano sintered silver or conductive adhesive.
Bonding pads 22 are further arranged on two sides of the embedded cavity at the bonding surface 15 between the first intermediate substrate 12 and the second intermediate substrate 13, and are used for bonding the embedded chip with the bonding pads 22 by adopting gold wires, and the bonding pads 22 are communicated with the interconnection through holes 21, so that the chip is electrically connected with the outside.
Furthermore, a second cavity is provided on the first intermediate substrate 12 for securing the ferrite 32 of the circulator. An upper clipping plate 14 is arranged on the embedded cavity of the second middle substrate and is used for sealing the embedded chip. A permanent magnet 33 is provided on the second intermediate substrate 13 on the ferrite 32. The permanent magnet 33, ferrite 32 and metal carrier 31 constitute an annular body. The metal carrier 31 and ferrite 32 of the circulator are fixed by a gold-tin sintering process, and the permanent magnet 33 is adhered and fixed by conductive adhesive.
Therefore, the annular body and the embedded chip are integrally packaged, so that the integrated design is realized, and the packaging size is reduced.
On the other hand, the invention also provides a preparation method of the transceiver front-end packaging module, and fig. 2A-2F show preparation flow diagrams of several main steps of the preparation method of the transceiver front-end packaging module provided by the embodiment of the invention. Fig. 2F is a schematic structural diagram of a single cut transceiver front-end package module, and vertical dashed lines in fig. 2A-2E are subsequent cut lines.
The preparation method comprises the following steps: a first cavity 41 is formed in the lower substrate 11, a plurality of first cavities 42 and second cavities 43 are formed in the first intermediate substrate 12, and a second cavity 44 is formed in the second intermediate substrate 13. Vertical interconnect vias 21 are prepared at corresponding locations on the lower substrate 11 and the first intermediate substrate 12, and conductors are filled in the interconnect vias.
The lower substrate 11, the first intermediate substrate 12, and the second intermediate substrate 13 are bonded to form a first package module. Wherein, the first reserved cavity 41 is provided with a second reserved cavity 43, the first embedded cavity 42 is provided with a second embedded cavity 44, and the first embedded cavity 42 and the second embedded cavity 44 form a chip embedded cavity. The embedded chip is mounted in the chip embedded cavity, and the embedded chip is in electrical communication with the bonding surface 15 of the first intermediate substrate 12 and the second intermediate substrate 13 by wire bonding. Wherein, bonding surface 15 is provided with bonding pad 22, and bonding pad 22 is used for interconnection through hole 21 electricity to connect, and after the chip and bonding pad bond, thereby realize chip and outside electrical communication.
The upper substrate 14 is bonded to the first package module, the upper substrate 14 seals the chip embedded cavity, and the upper substrate 13 is not disposed on the second intermediate substrate 13 on the second pre-reserved cavity 43. After cutting the substrate, a single module is formed, then ferrite 32 is mounted in a second reserved cavity 43 in the single module, metal carrier 31 is mounted in the first reserved cavity, and permanent magnet 33 is mounted on a second intermediate substrate on ferrite 32.
Wherein, the upper substrate 14, the first intermediate substrate 12, the second intermediate substrate 13 and the lower substrate 11 are bonded by gold-gold low temperature bonding. The metal carrier 31 and ferrite 32 of the circulator are fixed by a gold-tin sintering process, and the permanent magnet 33 is adhered and fixed by conductive adhesive. The embedded chip and the lower substrate 11 are adhered and fixed by nano sintered silver or conductive adhesive.
The substrate cutting may be mechanical cutting or laser stealth cutting.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
In addition, the invention also provides a microwave communication system, which comprises the transceiver front-end packaging module, so that not only is the integrated packaging of the annular body and the chip realized, but also the embedded chip does not need to be packaged integrally or packaged by metal again after the circuit micro-assembly is completed, the obtained microwave communication system has higher integration level, and the weight of the whole system is also greatly reduced.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (8)
1. A transceiver front-end package module, comprising: the device comprises a multilayer substrate, a plurality of embedded chips embedded in the multilayer substrate and a circulator; wherein,
The multi-layer substrate at least comprises an upper layer substrate, a middle substrate and a lower layer substrate;
the circulator comprises a metal carrier, ferrite and a permanent magnet, wherein the metal carrier is arranged in a first reserved cavity on the lower substrate, the ferrite is arranged in a second reserved cavity of the middle substrate, and the permanent magnet is arranged on the upper substrate, and the second reserved cavity is communicated with the first reserved cavity;
The embedded chips are arranged in embedded cavities on the middle substrate, and the upper substrate seals all the embedded cavities; the embedded chip is electrically connected through an interconnection through hole arranged on the lower substrate and the middle substrate;
the intermediate substrate at least comprises a first intermediate substrate and a second intermediate substrate, wherein the first intermediate substrate is positioned on the lower substrate, and the second intermediate substrate is positioned on the first intermediate substrate;
the first intermediate substrate and the second intermediate substrate are provided with embedded cavities which are mutually communicated, the embedded cavity of the second intermediate substrate is provided with an upper substrate, the second intermediate substrate on the ferrite is provided with a permanent magnet, and the opening of the embedded cavity on the second intermediate substrate is larger than the opening of the embedded cavity which is communicated with the embedded cavity and is positioned on the first intermediate substrate.
2. The transceiver front-end package module of claim 1, wherein the buried cavity on the second intermediate substrate is coaxially disposed with the buried cavity on the first intermediate substrate.
3. The transceiver front-end package module of claim 1, further comprising a bonding pad on a bonding surface of the embedded cavity of the second intermediate substrate and the embedded cavity of the first intermediate substrate, the bonding pad being configured to bond with the embedded chip.
4. The transceiver front-end package module of claim 1, wherein the metal carrier and ferrite of the circulator are fixed by a gold-tin sintering process, and the permanent magnet is fixed by a conductive adhesive.
5. The transceiver front-end package module of claim 3, wherein three-dimensional vertical interconnection through holes which are communicated with each other are arranged on the lower substrate and the first intermediate substrate for signal transmission; and the interconnection through hole is connected with a bonding pad arranged on the bonding surface of the second intermediate substrate and the first intermediate substrate.
6. The transceiver front-end package module of claim 1, wherein the pre-buried chip and the lower substrate are fixed by nano-sintered silver or conductive adhesive.
7. The preparation method of the transceiver front-end packaging module is characterized by comprising the following steps of:
manufacturing a first reserved cavity on a lower substrate, manufacturing a plurality of first embedded cavities and second reserved cavities on a first intermediate substrate, and manufacturing a second embedded cavity on a second intermediate substrate;
preparing vertical interconnection through holes at corresponding positions on the lower substrate and the first intermediate substrate, and filling conductors in the interconnection through holes;
Bonding the lower substrate, the first intermediate substrate and the second intermediate substrate to form a first packaging module; the first reserved cavity is the second reserved cavity, the first embedded cavity is the second embedded cavity, and the first embedded cavity and the second embedded cavity form a chip embedded cavity;
Installing an embedded chip into the chip embedded cavity, and conducting wire bonding on bonding surfaces between the embedded chip and the first intermediate substrate and between the embedded chip and the second intermediate substrate to realize electric communication;
Bonding an upper substrate with the first packaging module, wherein the upper substrate seals the chip embedded cavity, and no upper substrate is arranged on a second intermediate substrate on the second reserved cavity;
and ferrite is arranged in the second reserved cavity, a metal carrier is arranged in the first reserved cavity, and a permanent magnet is arranged on a second intermediate substrate on the ferrite.
8. A microwave communication system comprising a transceiver front-end package module as claimed in any one of claims 1 to 6.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10173409A (en) * | 1996-12-13 | 1998-06-26 | Nec Corp | Microwave integrated circuit circulator and manufacture thereof |
| JP2003023307A (en) * | 2001-07-10 | 2003-01-24 | Toshiba Corp | Irreversible circuit element and production method therefor |
| CN101656244A (en) * | 2009-07-10 | 2010-02-24 | 中国科学院上海微系统与信息技术研究所 | Multilayer interconnection packaging structure of silica-based embedded microwave multi chip module and manufacturing method |
| JP2010283774A (en) * | 2009-06-08 | 2010-12-16 | Mitsubishi Electric Corp | Multilayered substrate with built-in nonreciprocal circuit |
| JP2015035675A (en) * | 2013-08-08 | 2015-02-19 | 三菱電機株式会社 | High frequency module |
| CN109273813A (en) * | 2018-11-15 | 2019-01-25 | 西南应用磁学研究所 | A kind of novel surface-mount type circulator and packaging method |
| CN109890188A (en) * | 2019-02-15 | 2019-06-14 | 华为技术有限公司 | Package assembling and electronic equipment |
| CN209029359U (en) * | 2018-11-23 | 2019-06-25 | 华进半导体封装先导技术研发中心有限公司 | A kind of chip chamber full-shield encapsulating structure based on substrate embedment technical module |
| KR20190135172A (en) * | 2018-05-28 | 2019-12-06 | 주식회사 심텍 | Method of manufacturing printed circuit board using metal core substrate and printed circuit board manufactured by the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012109913A (en) * | 2010-11-19 | 2012-06-07 | Toshiba Corp | Irreversible element |
| US20190363415A1 (en) * | 2016-11-18 | 2019-11-28 | Zte Corporation | Microstrip circulator |
-
2022
- 2022-05-11 CN CN202210512705.6A patent/CN115084814B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10173409A (en) * | 1996-12-13 | 1998-06-26 | Nec Corp | Microwave integrated circuit circulator and manufacture thereof |
| JP2003023307A (en) * | 2001-07-10 | 2003-01-24 | Toshiba Corp | Irreversible circuit element and production method therefor |
| JP2010283774A (en) * | 2009-06-08 | 2010-12-16 | Mitsubishi Electric Corp | Multilayered substrate with built-in nonreciprocal circuit |
| CN101656244A (en) * | 2009-07-10 | 2010-02-24 | 中国科学院上海微系统与信息技术研究所 | Multilayer interconnection packaging structure of silica-based embedded microwave multi chip module and manufacturing method |
| JP2015035675A (en) * | 2013-08-08 | 2015-02-19 | 三菱電機株式会社 | High frequency module |
| KR20190135172A (en) * | 2018-05-28 | 2019-12-06 | 주식회사 심텍 | Method of manufacturing printed circuit board using metal core substrate and printed circuit board manufactured by the same |
| CN109273813A (en) * | 2018-11-15 | 2019-01-25 | 西南应用磁学研究所 | A kind of novel surface-mount type circulator and packaging method |
| CN209029359U (en) * | 2018-11-23 | 2019-06-25 | 华进半导体封装先导技术研发中心有限公司 | A kind of chip chamber full-shield encapsulating structure based on substrate embedment technical module |
| CN109890188A (en) * | 2019-02-15 | 2019-06-14 | 华为技术有限公司 | Package assembling and electronic equipment |
Non-Patent Citations (4)
| Title |
|---|
| A new packaging approach for reliable high temperature MEMS devices based on multilayer ceramic interposers;Frank Roscher等;AMA Conferences;20131231;全文 * |
| Integration Concept for a Self-Biased Ka-Band Circulator;Wanja M. Gitzel等;2020 23rd International Microwave and Radar Conference;20201112;全文 * |
| 宽频带X波段Y结铁氧体环形器的设计与仿真;丁静;杨钊;周蜜;;硅谷;20110923(第18期);全文 * |
| 预埋芯片混合集成基板制造技术研究;李浩;王从香;崔凯;胡永芳;;电子机械工程;20200815(04);全文 * |
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