CN115038263A - Method for removing carbon powder residue at front cover opening position of multilayer board - Google Patents
Method for removing carbon powder residue at front cover opening position of multilayer board Download PDFInfo
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- CN115038263A CN115038263A CN202210529721.6A CN202210529721A CN115038263A CN 115038263 A CN115038263 A CN 115038263A CN 202210529721 A CN202210529721 A CN 202210529721A CN 115038263 A CN115038263 A CN 115038263A
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- multilayer board
- front cover
- cover opening
- carbon powder
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000007747 plating Methods 0.000 claims abstract description 44
- 229910052802 copper Inorganic materials 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 25
- 238000001020 plasma etching Methods 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 238000003825 pressing Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 58
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 24
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 15
- 238000003466 welding Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 22
- 239000011889 copper foil Substances 0.000 description 16
- 230000009471 action Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 oxygen forms oxygen ion Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000001892 vitamin D2 Nutrition 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a method for removing carbon powder residue at a front cover opening position of a multilayer board, which comprises the following steps: obtaining a first multilayer board subjected to front cover opening treatment and carbon film plating treatment; pressing the dry film on the first multilayer board to obtain a second multilayer board; sequentially carrying out local dry film development and local copper plating on the second multilayer board to obtain a third multilayer board; and performing film removal treatment on the third multilayer board, and treating carbon powder residues on the film-removed third multilayer board by adopting a plasma etching method to obtain the target multilayer board. The method effectively solves the problem of carbon powder residue on the front cover opening position of the multilayer board, ensures the transparency of the PI base material on the front cover opening position, and avoids the phenomenon that the downstream cannot grab mark points through the PI base material for butt welding due to poor transparency of the PI base material caused by the carbon powder residue; meanwhile, the influence of the whole carbon powder residue removing process on the PI base material on the circuit position is reduced, and the product yield is obviously improved.
Description
Technical Field
The invention relates to the technical field of flexible circuit board manufacturing, in particular to a method for removing carbon powder residue at a front cover opening position of a multilayer board.
Background
A Flexible Printed Circuit (FPC) is generally made of polyimide (PI film) as a base material, and is a highly reliable and excellent Flexible Printed Circuit. The flexible circuit board has the advantages of high wiring density, light weight, thin thickness, good bending property and the like. The flexible circuit board is divided into a single-sided board, a double-sided board and a multilayer board (three or more layers of boards) according to the thickness and the number of layers. The higher the number of layers and the thicker the thickness of the flexible circuit board are, the poorer the bending performance is, and the reliability cannot meet the requirement. Therefore, in order to meet the demand of increasingly light and thin electronic products, a cover opening process is required to thin a local area of the multilayer board.
The decap process (i.e., de-cap) refers to removing a partial area of one, two, or more layers of the outermost layer of a multilayer board by a manufacturing process such that the multilayer board becomes a two-layer board in the partial area. The most common uncapping process at present is front uncapping, and the manufacturing process comprises the following steps: uncovering → carbon film plating → copper plating press film → copper plating exposure → development → copper plating → film removal → chemical cleaning → post-treatment normal flow, the process method can effectively achieve the aim of thinning the multilayer board. However, in the front cover opening process, the PI substrate exposed at the front cover opening position may absorb the shadow in the carbon film plating process, which affects the transparency of the PI substrate. The existing manufacturing process cannot completely remove the carbon film attached to the PI substrate at the front cover opening position, so that more carbon powder still remains on the PI substrate, the transparency of the PI is seriously influenced, and the requirement that a mark point is grabbed by a downstream through the PI substrate to carry out alignment welding is further influenced.
Disclosure of Invention
In view of this, the embodiment of the invention provides a method for removing carbon powder residues at a front cover opening position of a multilayer board, so as to solve the problem that in the prior art, carbon films attached to a PI substrate at the front cover opening position of the multilayer board cannot be completely removed, so that more carbon powder still remains on the PI substrate, and the transparency of the PI is seriously affected.
The invention provides a method for removing carbon powder residue at a front cover opening position of a multilayer board, which comprises the following steps:
obtaining a first multilayer board subjected to front cover opening treatment and carbon film plating treatment;
pressing a dry film on the first multilayer board to obtain a second multilayer board;
sequentially carrying out local dry film development and local copper plating on the second multilayer board to obtain a third multilayer board;
and performing film removal treatment on the third multilayer board, and treating carbon powder residues on the film-removed third multilayer board by adopting a plasma etching method to obtain the target multilayer board.
Optionally, the acquiring the first multilayer board subjected to front opening cover processing includes:
providing an initial multilayer board;
respectively presetting a copper plating area and a front cover opening area on the initial multilayer board;
performing front cover opening treatment on the initial multilayer board based on the front cover opening area;
and carrying out carbon film plating treatment on the initial multilayer board subjected to the front cover opening treatment to obtain the first multilayer board.
Optionally, the pressing a dry film on the first multilayer board to obtain a second multilayer board includes:
and (3) pressing a layer of dry film on two sides of the first multilayer board in a pressure equalizing manner, so that the copper plating area and the front cover opening area on the first multilayer board are both covered by the dry film, and thus the second multilayer board is obtained.
Optionally, the performing partial dry film development and partial copper plating on the second multilayer board sequentially to obtain a third multilayer board, includes:
sequentially carrying out development treatment and exposure treatment on the dry film on the copper-plated area of the second multilayer board to expose the copper-plated area;
performing copper plating on the copper-plated area of the second multilayer board after the development treatment to obtain the third multilayer board.
Optionally, the removing the film of the third multilayer board and processing the carbon powder residue on the third multilayer board after the film removing by using a plasma etching method includes:
removing a dry film on the third multilayer board to expose the carbon powder residue on the front cover opening area of the third multilayer board;
and etching the third multilayer board subjected to the film removal treatment by using a preset plasma environment and a plasma etching method.
Optionally, before the etching, by using a preset plasma environment and using a plasma etching method, the third multilayer board after the film removal processing further includes:
setting a vacuum alternating electric field, and placing the third multilayer board subjected to film removal treatment into the vacuum alternating electric field;
and filling nitrogen, oxygen and CF4 gas into the vacuum alternating electric field to obtain the preset plasma environment.
Optionally, the charging of nitrogen, oxygen and CF4 gas into the vacuum alternating electric field includes:
respectively filling the oxygen and the nitrogen into the vacuum alternating electric field according to a first preset flow ratio;
after the first preset time, according to a second preset flow ratio, respectively filling the oxygen, the nitrogen and the CF4 gas into the vacuum alternating electric field;
after the second preset time period, stopping filling the nitrogen and the CF4 gas in the vacuum alternating electric field, and maintaining the filled oxygen according to a third preset time period.
Optionally, the first preset flow ratio between the oxygen gas and the nitrogen gas is 3:1, and/or the second preset flow ratio between the oxygen gas, the nitrogen gas and the CF4 gas is 8:1: 1.
Optionally, the first preset time period is greater than or equal to 2min, and/or the second preset time period is less than or equal to 10min, and/or the third preset time period is greater than or equal to 2 min.
Optionally, after the processing of the carbon powder residue on the third multilayer board after the membrane removal processing, the method further includes:
and processing the third multilayer board after carbon powder residue treatment by adopting the processes of circuit forming, solder resist ink and gold immersion to obtain the target multilayer board.
The invention has the beneficial effects that: the first multilayer board subjected to front cover opening treatment and carbon film plating treatment can form a plurality of through holes on the first multilayer board, so that subsequent circuit forming is facilitated, and the purpose of locally thinning the first multilayer board is achieved; according to the invention, the dry film is pressed on the first multilayer board, and the second multilayer board after the dry film is pressed is subjected to local dry film development and local copper plating, so that on one hand, the front uncapping area is protected by the dry film, so that the front uncapping area is not plated with copper, and the situation that the front uncapping area still adsorbs carbon powder residue after being plated with copper is avoided; on the other hand, normal copper plating of the area needing copper plating is realized, and circuit forming is ensured; after the local copper plating is finished, removing the dry film, and processing the whole third multilayer board after the film is removed by using a plasma etching method, so that the residual carbon powder in the front uncapping area is removed, and the influence of plasma etching on the PI base material on the line position is avoided; the method effectively solves the problem of carbon powder residue on the front uncapping position of the multilayer board, ensures the transparency of the PI substrate on the front uncapping position, and avoids the phenomenon that the downstream cannot grab mark points through the PI substrate for butt welding due to poor transparency of the PI substrate caused by the carbon powder residue; meanwhile, the influence of the whole carbon powder residue removing process on the PI substrate on the circuit position is reduced, and the product yield is obviously improved.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
FIG. 1 is a flow chart showing a method for removing carbon powder residue at a front cover opening position of a multilayer board in an embodiment of the invention;
FIG. 2 shows a cross-sectional view of the initial multiwall sheet in an embodiment of the present invention;
FIG. 3 is a cross-sectional view illustrating the initial multi-layer board after a front-uncap process in an embodiment of the present invention;
FIG. 4 is a top view external structure view of the initial multi-layer board after being subjected to a front-opening lid treatment in the embodiment of the present invention;
FIG. 5 shows a cross-sectional view of a first multilayer board in an embodiment of the invention;
FIG. 6 shows a top view external structural view of a first multilayer sheet in an embodiment of the invention;
FIG. 7 is a cross-sectional view showing a structure of a second multilayer board in the embodiment of the present invention;
FIG. 8 shows a cross-sectional view of a second multiwall sheet after partial dry film development in an embodiment of the invention;
FIG. 9 shows a cross-sectional view of a third multilayer board in the embodiment of the present invention;
FIG. 10 is a top view external structural drawing illustrating a third multilayer sheet in an embodiment of the invention;
FIG. 11 is a cross-sectional view of a third multiwall sheet after removal of the dry film in an embodiment of the invention;
FIG. 12 shows a cross-sectional view of a third multilayer board after etching in an embodiment of the invention;
FIG. 13 shows a top view external structure view of a third multilayer board after etching in an embodiment of the invention;
FIG. 14 shows a top view external structural view of a third multilayer sheet after being formed by a wire route in an embodiment of the invention;
fig. 15 shows a top view external structure view of a multilayer board obtained according to a conventional manufacturing flow.
Description of reference numerals:
1. 2, a double-sided board, 2, a single-sided board, 3, bonding glue, 4, a front cover opening area, 5, a copper plating area, 6, residual carbon powder, 7, a dry film, 8 and a copper plating layer;
11. first copper foil, 12, second copper foil, 13, first PI base material, 21, third copper foil, 22, second PI base material.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
A method for removing carbon powder residue at a front cover opening position of a multilayer board, as shown in figure 1, comprises the following steps:
s1, the first multilayer board subjected to the before-opening-cover treatment and the carbon film plating treatment is obtained.
Preferably, S1 includes:
s11: providing an initial multilayer board;
s12: respectively presetting a copper plating area and a front cover opening area on the initial multilayer board;
s13: performing front cover opening treatment on the initial multilayer board based on the front cover opening area;
s14: and carrying out carbon film plating treatment on the initial multilayer board subjected to the front cover opening treatment to obtain the first multilayer board.
Through the front cover opening treatment and the carbon film plating treatment, the subsequent copper plating process is facilitated, and the circuit forming of the multilayer board is realized.
Specifically, the initial multilayer board is a flexible circuit board having three and more layers of copper foils, and the flexible circuit board having three layers of copper foils is taken as an example in the present embodiment, as shown in fig. 2. In fig. 2, the initial multilayer board comprises a double-sided board 1 and a single-sided board 2, wherein the double-sided board 1 comprises a first copper foil 11, a second copper foil 12 and a first PI substrate 13 attached between the first copper foil 11 and the second copper foil 12, the single-sided board 2 comprises a third copper foil 21 and a second PI substrate 22 attached on the third copper foil 21, and the second PI substrate 22 in the single-sided board 2 is attached on the second copper foil 12 in the double-sided board 1 through a bonding glue 3 (i.e. a bonding glue). The pre-defined front uncapped area 4 and copper plated area 5 on the initial multilayer board are shown in fig. 2.
The sectional surface structure and the top surface appearance structure of the initial multilayer board in fig. 2 after the front opening cover process of S13 (i.e., before the carbon-plated film of S14) are respectively shown in fig. 3 and 4, in which the copper foil of the outermost layer (i.e., the third copper foil 21) and the copper foil of the next outermost layer (i.e., the second copper foil 12) of the initial multilayer board in the front opening cover region are respectively removed, and the sectional surface structure and the top surface appearance structure of the first multilayer board obtained after the front opening cover process of S13 and the carbon-plated film process of S14 in fig. 2 are respectively shown in fig. 5 and 6, and in fig. 5, 6 indicates the carbon powder residue formed in the front opening cover region 4 and the copper-plated region 5.
As shown in fig. 1, a dry film is pressed on the first multilayer board to obtain a second multilayer board S2.
Preferably, S2 includes:
and (3) pressing a layer of dry film on two sides of the first multilayer board in a pressure equalizing manner, so that the copper plating area and the front cover opening area on the first multilayer board are both covered by the dry film, and thus the second multilayer board is obtained.
By the dry film, on one hand, the front cover opening area is protected from being plated with copper, carbon powder residue is prevented from being adsorbed after the carbon powder is etched away after the front cover opening area is plated with copper, and the removal effect of the carbon powder residue is improved; on the other hand, the subsequent dry film exposure and development process is convenient, the local copper plating is realized by combining the copper plating process, and the circuit forming of the multilayer board is convenient.
Specifically, in this embodiment, a dry film layer is pressed on both sides of the first multilayer board by hot roll pressing, such as the dry films 7 on both sides of the first multilayer board shown in fig. 7.
As shown in fig. 1, S3, the second multilayer board is subjected to partial dry film development and partial copper plating in this order to obtain a third multilayer board.
Preferably, S3 includes:
s31: sequentially carrying out development treatment and exposure treatment on the dry film on the copper-plated area of the second multilayer board to expose the copper-plated area;
s32: performing copper plating on the copper-plated area of the second multilayer board after the development treatment to obtain the third multilayer board.
Through the method for local dry film development and local copper plating, the circuit forming of the multilayer board can be conveniently realized, and the influence of copper plating on the exposed PI base material in the front uncapping area can be reduced.
The cross-sectional structure of the second multilayer board after being subjected to the development treatment and exposure treatment of S31 in this example is shown in fig. 8, the cross-sectional structure and the top surface appearance structure of the third multilayer board after being subjected to the copper plating of S32 are shown in fig. 9 and 10, respectively, and in fig. 9, 8 represents a copper plating layer formed by partial copper plating.
As shown in fig. 1, S4, performing a film removal process on the third multilayer board, and performing a plasma etching process on the carbon powder residue on the film-removed third multilayer board to obtain the target multilayer board.
Preferably, S4 includes:
s41: removing a dry film on the third multilayer board to expose the carbon powder residue on the front cover opening area of the third multilayer board;
s42: and etching the third multilayer board subjected to the film removal treatment by using a preset plasma environment and a plasma etching method.
After the partial copper plating of S3, the dry film is removed immediately, and the residual carbon powder on the exposed PI base material (namely the first PI base material 13) in the front uncapping area can be removed with a better removing effect by adopting a plasma etching method, so that the purpose of removing the residual carbon powder is achieved; meanwhile, on the basis of ensuring that the carbon powder residue is removed, the influence of plasma etching on the PI base material on the circuit position can be effectively avoided by carrying out plasma etching after the circuit is formed.
Specifically, the cross-sectional structure of the third multilayer board from which the dry film is removed through S41 according to this embodiment is shown in fig. 11, and the cross-sectional structure and the top-view appearance structure of the third multilayer board after etching through S42 are shown in fig. 12 and 13, respectively.
Preferably, before S42, the method further includes:
setting a vacuum alternating electric field, and placing the third multilayer board subjected to film removal treatment into the vacuum alternating electric field;
and filling nitrogen, oxygen and CF4 gas into the vacuum alternating electric field to obtain the preset plasma environment.
Nitrogen, oxygen and CF4 gas filled in the vacuum alternating electric field form a high-energy state, namely plasma, in which all electrons, ions, molecules, photons and particles exist simultaneously under the agitation of the alternating electric field; in the plasma, electrons, ions, molecules, photons and particles in an alternating field of the third multilayer board can perform physical attack and chemical reaction on the surface of the third multilayer board under the agitation, so that substances on the surface of the third multilayer board are changed into particles or gas, and the particles or the gas are removed through vacuumizing, thereby achieving the effect of removing carbon powder residues on the third multilayer board; the charged nitrogen, oxygen and CF4 gas can effectively remove carbon powder residue and minimize the influence on PI substrate.
Preferably, the charging of nitrogen, oxygen and CF4 gas into the vacuum alternating electric field comprises:
respectively filling the oxygen and the nitrogen into the vacuum alternating electric field according to a first preset flow ratio;
after the first preset time, according to a second preset flow ratio, respectively filling the oxygen, the nitrogen and the CF4 gas into the vacuum alternating electric field;
after the second preset time, stopping filling the nitrogen gas and the CF4 gas in the vacuum alternating electric field, and maintaining the oxygen gas according to a third preset time.
And filling oxygen and nitrogen according to a first preset flow ratio, and filling oxygen, nitrogen and CF4 according to a second preset flow ratio after a first preset time, so that the third multilayer board is etched under the environment action of oxygen and nitrogen firstly, the etching action time is the first preset time, and then etched under the environment action of oxygen, nitrogen and CF4, and the etching action time is the second preset time. In the process of the environmental action of oxygen and nitrogen, nitrogen is used as working medium gas to play a role in protecting against oxidation and ensure the stability of the subsequent gas treatment process; the charged oxygen forms oxygen ion free radicals under the action of the vacuum alternating electric field, the oxygen ion free radicals and carbon residue (namely hydrocarbon) are subjected to chemical reaction, C, C-H components on the surface of the flexible board to be processed are stripped, compounds such as CO, CO2 and the like are generated, and the aim of etching treatment is fulfilled. In the process of environmental action of oxygen, nitrogen and CF4 gas, the filled CF4 gas forms fluorine ion free radicals under the action of a vacuum alternating electric field, the fluorine ion free radicals and carbon residues (namely hydrocarbon) are subjected to chemical reaction, C, C-H components on the surface of the flexible plate to be processed are stripped, compounds such as HF and the like are generated, and the purpose of etching treatment is achieved.
Preferably, the first preset flow ratio between the oxygen gas and the nitrogen gas is 3:1, and/or the second preset flow ratio between the oxygen gas, the nitrogen gas and the CF4 gas is 8:1: 1.
According to the appropriate first preset flow ratio and the second preset flow ratio, the optimal carbon powder residue removing effect can be ensured, and the influence of carbon powder removal on the PI base material can be reduced as much as possible.
Specifically, in the present embodiment, the flow rates of the oxygen gas and the nitrogen gas to be filled first are 1500sccm and 500sccm, respectively; after the first preset time, the flow rates of the oxygen gas, the nitrogen gas and the CF4 gas are 2000sccm, 250sccm and 250sccm respectively; after the second preset time period, the nitrogen and the CF4 gas are stopped to be filled, and the flow of the filled oxygen is kept unchanged and is 2000 sccm.
Preferably, the first preset time period is greater than or equal to 2min, and/or the second preset time period is less than or equal to 10min, and/or the third preset time period is greater than or equal to 2 min.
The reduction effect of different plasma etching time on the PI base material is different, and the reduction effect of the plasma etching on the PI base material can be reduced as much as possible through the preset time lengths in the range.
Specifically, in this embodiment, according to the first preset flow ratio and the second preset flow ratio, different plasma etching times are used to etch the third multilayer board, and the bite amount of the PI substrate is observed (where the greater the bite amount of the PI is, the greater the subtractive action of the plasma etching on the PI substrate is), so as to obtain the optimal plasma etching time, that is, the optimal combination of the first preset duration, the second preset duration, and the third preset duration is obtained. The results of the amount of bite of the PI substrate obtained by etching the third multilayer board at different plasma etching times are shown in table 1.
TABLE 1 bite counts for PI substrates obtained by etching third multiwall sheets at different plasma etch times
From the above table 1, it can be seen that, on the basis of ensuring that the carbon powder residue is removed, as the second preset time duration increases, the greater the bite amount of the plasma etching on the PI substrate, the greater the subtractive action on the PI substrate, so in this embodiment, in order to simultaneously achieve the optimal carbon powder residue removal effect and the minimum subtractive action on the PI substrate, the first preset time duration is 2min, the second preset time duration is 4min, and the third preset time duration is 2min, that is, specific working parameters selected in the plasma etching process in this embodiment are as shown in table 2.
TABLE 2 detailed operating parameters selected for use in the plasma etch process of this example
Preferably, after the processing of the carbon powder residue on the third multilayer board after the film removing processing, the method further comprises:
and processing the third multilayer board after carbon powder residue treatment by adopting the processes of circuit forming, solder resist ink and gold immersion to obtain the target multilayer board.
By the manufacturing process, the complete manufacturing process of the multilayer board is completed, and the multilayer board meeting the use condition is obtained.
Specifically, in this embodiment, the top view and appearance structure of the obtained target multilayer board is shown in fig. 14 by processing the third multilayer board according to the above steps, and the top view and appearance structure of the multilayer board obtained according to the conventional manufacturing process is shown in fig. 15.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (10)
1. A method for removing carbon powder residue at a front cover opening position of a multilayer board is characterized by comprising the following steps:
obtaining a first multilayer board subjected to front cover opening treatment and carbon film plating treatment;
pressing a dry film on the first multilayer board to obtain a second multilayer board;
sequentially carrying out local dry film development and local copper plating on the second multilayer board to obtain a third multilayer board;
and performing film removal treatment on the third multilayer board, and treating carbon powder residues on the film-removed third multilayer board by adopting a plasma etching method to obtain the target multilayer board.
2. The method for removing carbon powder residues on a front cover opening position of a multilayer board according to claim 1, wherein the obtaining of the first multilayer board subjected to front cover opening comprises:
providing an initial multilayer board;
respectively presetting a copper plating area and a front cover opening area on the initial multilayer board;
performing front cover opening processing on the initial multilayer board based on the front cover opening area;
and carrying out carbon film plating treatment on the initial multilayer board subjected to the front cover opening treatment to obtain the first multilayer board.
3. The method for removing carbon powder residues on the front cover opening position of the multilayer board according to claim 2, wherein the step of pressing a dry film on the first multilayer board to obtain a second multilayer board comprises the following steps:
and (3) pressing a layer of dry film on two sides of the first multilayer board in a pressure equalizing manner, so that the copper plating area and the front cover opening area on the first multilayer board are both covered by the dry film, and thus the second multilayer board is obtained.
4. The method for removing carbon powder residues at the front cover opening position of the multilayer board according to claim 3, wherein the step of sequentially carrying out local dry film development and local copper plating on the second multilayer board to obtain a third multilayer board comprises the following steps:
sequentially carrying out development treatment and exposure treatment on the dry film on the copper-plated area of the second multilayer board to expose the copper-plated area;
performing copper plating on the copper-plated area of the second multilayer board after the development treatment to obtain the third multilayer board.
5. The method for removing carbon powder residues on a front cover opening position of a multilayer board according to claim 1, wherein the step of removing the film from the third multilayer board and treating the carbon powder residues on the third multilayer board after the film is removed by adopting a plasma etching method comprises the following steps:
removing the dry film on the third multilayer board to expose the residual carbon powder on the front cover opening area of the third multilayer board;
and etching the third multilayer board subjected to the film removal treatment by using a preset plasma environment and a plasma etching method.
6. The method for removing carbon powder residues at the front cover opening position of the multilayer board according to claim 5, wherein before the third multilayer board is etched by a plasma etching method in a preset plasma environment, the method further comprises the following steps:
setting a vacuum alternating electric field, and placing the third multilayer board subjected to film removal treatment into the vacuum alternating electric field;
and filling nitrogen, oxygen and CF4 gas into the vacuum alternating electric field to obtain the preset plasma environment.
7. The method for removing carbon powder residues on the front cover opening position of the multilayer board according to claim 6, wherein the filling of nitrogen, oxygen and CF4 gas in the vacuum alternating electric field comprises the following steps:
respectively charging the oxygen and the nitrogen into the vacuum alternating electric field according to a first preset flow ratio;
after the first preset time, according to a second preset flow ratio, respectively filling the oxygen, the nitrogen and the CF4 gas into the vacuum alternating electric field;
after the second preset time, stopping filling the nitrogen gas and the CF4 gas in the vacuum alternating electric field, and maintaining the oxygen gas according to a third preset time.
8. The method for removing carbon powder residues on the front cover opening position of the multilayer board as claimed in claim 7, wherein the first preset flow ratio between the oxygen and the nitrogen is 3:1, and/or the second preset flow ratio between the oxygen, the nitrogen and the CF4 is 8:1: 1.
9. The method for removing carbon powder residues on the front cover opening position of the multilayer board according to claim 7, wherein the first preset time period is greater than or equal to 2min, and/or the second preset time period is less than or equal to 10min, and/or the third preset time period is greater than or equal to 2 min.
10. The method for removing carbon powder residue at the front cover opening position of the multilayer board according to any one of claims 1 to 9, wherein after the step of processing the carbon powder residue on the third multilayer board after the step of removing the film, the method further comprises the following steps:
and processing the third multilayer board after carbon powder residue treatment by adopting the processes of circuit forming, solder resist ink and gold immersion to obtain the target multilayer board.
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