CN114256576A - D-band Tesla node coupling structure - Google Patents

D-band Tesla node coupling structure Download PDF

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Publication number
CN114256576A
CN114256576A CN202111527391.9A CN202111527391A CN114256576A CN 114256576 A CN114256576 A CN 114256576A CN 202111527391 A CN202111527391 A CN 202111527391A CN 114256576 A CN114256576 A CN 114256576A
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tesla
arc
conduction band
metal conduction
junction
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CN114256576B (en
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汪晓光
畅甲维
赵晓琴
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The invention relates to a microwave technology, in particular to a D-band Tesla node coupling structure. The invention only adopts a stripline cavity structure, utilizes the particularity of the structure that the electromagnetic wave achieves different phase differences of two nodes of the Tesla junction by combining the traditional stripline and the Tesla junction, realizes the filtering effect of band elimination by the change of the conduction band structure at the center of the stripline, and has the advantage of small volume. When the three junctions are spaced differently, i.e., the coupling between the junctions is different, the filtering effect exhibited is different. A new way is provided for solving the problem that the existing coupling structure has relatively large volume and is not beneficial to integration.

Description

D-band Tesla node coupling structure
Technical Field
The invention relates to a microwave technology, in particular to a D-band Tesla node coupling structure.
Background
The D wave band is: 110-170GHz and is positioned in the terahertz frequency band. The strip line is widely used in the design of filters as a microwave transmission line. The traditional filtering effect of the strip line structure is realized by coupling between cavities or coupling between central guide strips, so that the whole volume is relatively large, and the traditional filtering effect is not favorable for the small-volume requirement of the integration of the current industry.
Disclosure of Invention
Aiming at the problems or the defects, the invention provides a D-band Tesla node coupling structure which is a stripline coupling structure and aims to solve the problem that the existing coupling structure is relatively large in size and not beneficial to integration.
The technical scheme of the invention is as follows:
a D-band tesla junction coupling structure comprising: a high dielectric constant dielectric substrate (9-14), a metal conduction band and a Tesla junction.
The dielectric constant of the dielectric substrate is 9-14.
The metal conduction band (copper) is arranged at the central position along the propagation direction of the electromagnetic wave in the dielectric substrate;
the three tesla junctions are the same, are positioned on the same side of the metal conduction band and are connected with the metal conduction band, and the material of the tesla junctions is the same as that of the metal conduction band; the three Tesla positional relationships are: the No. 1 junction is located at the center of the metal conduction band, and the No. 2 junction and the No. 3 junction are obtained by respectively moving the No. 1 junction back and forth along the length direction of the metal conduction band by the same distance d3, wherein d3 is 0.7-0.96 mm.
The inner side and the outer side of the Tesla node are formed by connecting an arc line edge and a semi-arc of the Lelo triangle; one end of the arc edge of the Leluo triangle is connected with one side edge of the metal conduction band, the other end of the arc edge of the Leluo triangle is connected with one end of the semicircular arc, the other end of the semicircular arc is connected with the side edge of the metal conduction band, and the arc edge of the Leluo triangle and the side edge of the metal conduction band connected with the semicircular arc are the same side, so that inner and outer side arcs of the Tesla node are formed; the central points of the Luoluo triangles of the inner camber line and the outer camber line of the Tesla node are coincided, and are coincided with the middle point of the side edge of the metal conduction band. In the inner arc line and the outer arc line of the Tesla node, one half of the side length of a regular triangle corresponding to the Lelo triangle is the diameter of a corresponding semicircular arc. Half of the perpendicular line of the regular triangle corresponding to the outer arc line of the tesla junction is L1, half of the perpendicular line of the regular triangle corresponding to the inner arc line is L2, L1 is 0.28-0.3 mm, and L2 is 0.19-0.22 mm.
The design method of the D-band Tesla junction coupling structure comprises the following steps:
step 1, designing a traditional strip line structure suitable for D-band transmission, wherein the traditional strip line structure comprises a dielectric constant epsilon of a dielectric substrate, a width w1, a thickness t1, a width w of a central metal conduction band and a thickness t.
And 2, constructing a No. 1 Tesla junction in the strip line structure designed in the step 1.
Firstly, constructing an outer arc of a Tesla junction by taking the midpoint of one side edge of a metal conduction band as the central point of a regular triangle, wherein the outer arc comprises an arc edge and a semi-arc of a Leluo triangle corresponding to the side length of the regular triangle, one end of the arc edge of the Leluo triangle is connected with one side edge of the metal conduction band, the other end of the arc edge of the Leluo triangle is connected with one end of the semi-arc, the other end of the semi-arc is connected with the side edge of the metal conduction band, and the arc edge of the Leluo triangle and the side edge of the metal conduction band connected with the semi-arc are the same side; ensuring that the center points of the Luoluo triangles of the internal and external arcs of the Tesla node coincide with each other and coincide with the middle point of the side edge of the metal conduction band; half of the perpendicular line of the regular triangle corresponding to the outer arc of the Tesla node is L1, and L1 is 0.28-0.3 mm.
Then, the sizes of the arc line edge and the semi-arc of the Leluo triangle of the inner arc line of the Tesla node are obtained by reducing the side length of the regular triangle to which the outer arc line belongs, so that the size of the No. 1 Tesla node is determined; half of the perpendicular line of the regular triangle corresponding to the inner arc of the Tesla node is L2, and L2 is 0.19-0.22 mm.
And step 3, respectively moving the No. 1 Tesla node back and forth along the length direction of the metal conduction band by the same distance d3 to obtain the No. 2 and No. 3 junctions, wherein d3 is 0.7-0.96 mm.
And 4, adjusting L1, L2 and/or d3 to optimize the overall parameter performance and ensure that the whole coupling structure has a band stop effect.
In summary, the invention only adopts a stripline cavity structure, and by the way of combining the traditional stripline and the tesla junction, the invention realizes the filtering effect of band rejection by the change of the conduction band structure at the center of the stripline by utilizing the particularity of the structure, namely the difference of phase difference of two nodes of the tesla junction of electromagnetic waves, and has the advantage of small volume. When the three junctions are spaced differently, i.e., the coupling between the junctions is different, the filtering effect exhibited is different. A new way is provided for solving the problem that the existing coupling structure has relatively large volume and is not beneficial to integration.
Drawings
FIG. 1 is a schematic perspective view of a D-band Tesla junction coupling structure according to the present invention;
FIG. 2 is a schematic view of the local parameters of a D-band Tesla junction coupling structure of the present invention;
FIG. 3 is a graph of s parameters corresponding to the bandstop effect of the D-band Tesla junction coupling structure of the embodiment;
FIG. 4 is a plot of the s-parameters corresponding to a D3 of 0.7mm for a D-band Tesla junction coupling structure according to an embodiment;
FIG. 5 is a plot of the s-parameters corresponding to a D3 of 0.82mm for a D-band Tesla junction coupling structure according to an embodiment;
FIG. 6 is a plot of the s-parameters for a D-band Tesla junction coupling structure of an embodiment for a D3 of 0.92 mm.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
A design of a D-band Tesla junction coupling structure, comprising the steps of:
step 1, designing a traditional strip line structure suitable for D-band transmission. The dielectric substrate comprises a dielectric constant epsilon of the dielectric substrate, a width w1, a thickness t1, a width w of a central metal conduction band and a thickness t. Finally, the dielectric constant epsilon of the dielectric substrate is 10, the width w1 is 1.6mm, the thickness t1 is 0.25mm, the width w of the central metal conduction band is 0.1mm, and the thickness t is 0.03 mm. Since the width of the strip line limits the size of the tesla loop, the strip line length L is preliminarily determined to be 3mm according to mathematical knowledge.
And 2, adding a No. 1 Tesla junction in the strip line designed in the step 1.
Specifically use the central point of side on the metal conduction band as regular triangle's central point, for convenient modeling, use half of this regular triangle's vertical line as variable L1, the vertical line is located metal conduction band side on along the electromagnetic wave direction of propagation, thereby confirm the size of No. 1 tesla knot camber line, include one pitch arc limit and the semicircle with the corresponding luxuo triangle of this regular triangle side length, a side of metal conduction band is connected to luxuo triangle's pitch arc limit, the one end of another termination semicircle, another termination metal conduction band side of semicircle, the pitch arc limit of luxuo triangle and the metal conduction band side that the semicircle connects are the same side. And ensuring that the center points of the Luoluo triangles of the internal and external arcs of the Tesla node coincide with each other and coincide with the middle point of the side edge of the metal conduction band. L1 is 0.28-0.3 mm, and the diameter d1 of the semicircle in the outer arc line is half of the side length of the regular triangle.
Then, by changing L1, the sizes of the le triangle arc sides and the half arc of the inner arc of the tesla knot No. 1 are obtained, thereby forming the tesla knot No. 1. Let L2 be half of the vertical line of the regular triangle that the inside camber line of No. 1 Tesla node belongs to, L2 be 0.19 ~ 0.22mm, the diameter of corresponding semicircle is d 2.
And step 3, respectively moving the No. 1 Tesla junction back and forth along the length direction of the metal conduction band by the same distance d3 to obtain the No. 2 and No. 3 Tesla junctions, wherein d3 is 0.7-0.96 mm.
And 4, adjusting L1, L2 and/or d3 to optimize the overall parameter performance and ensure that the whole coupling structure has a band stop effect. Finally, when L1 is 0.28mm, L2 is 0.2mm, and d3 is 0.7-0.96 mm, the coupling structure shows a band stop effect, as shown in FIG. 3.
Fig. 4, 5 and 6 are S parameter diagrams when L1 is 0.28mm and L2 is 0.2mm, and d3 is 0.7mm, 0.82mm and 0.92mm, respectively.
According to the embodiment, the band elimination filter realizes the band elimination filtering effect by combining the traditional stripline and the Tesla junction and utilizing the particularity of the structure, namely the electromagnetic wave achieves different phase differences of two nodes of the Tesla junction. When the three junctions are spaced differently, i.e., the coupling between the junctions is different, the filtering effect exhibited is different. A new way is provided for solving the problem that the existing coupling structure has relatively large volume and is not beneficial to integration.

Claims (2)

1. A D-band Tesla junction coupling structure, characterized in that: the metal conduction band comprises a dielectric substrate, a metal conduction band and a Tesla junction;
the dielectric constant of the dielectric substrate is 9-14;
the metal conduction band is arranged at the central position along the propagation direction of the electromagnetic waves in the dielectric substrate;
the three tesla junctions are the same, are positioned on the same side of the metal conduction band and are connected with the metal conduction band, and the material of the tesla junctions is the same as that of the metal conduction band;
the three Tesla positional relationships are: the No. 1 junction is located in the middle of the metal conduction band, and the No. 1 junction is taken as a reference, the No. 2 junction and the No. 3 junction are obtained by respectively moving the No. 1 junction back and forth along the length direction of the metal conduction band by the same distance d3, and d3 is 0.7-0.96 mm;
the inner side and the outer side of the Tesla node are formed by connecting an arc line edge and a semi-arc of the Lelo triangle; one end of the arc edge of the Leluo triangle is connected with one side edge of the metal conduction band, the other end of the arc edge of the Leluo triangle is connected with one end of the semicircular arc, the other end of the semicircular arc is connected with the side edge of the metal conduction band, and the arc edge of the Leluo triangle and the side edge of the metal conduction band connected with the semicircular arc are the same side, so that inner and outer side arcs of the Tesla node are formed; the central points of the Luoluo triangles of the inner camber line and the outer camber line of the Tesla node are coincided, and are coincided with the middle point of the side edge of the metal conduction band; in the inner and outer arc lines of the Tesla node, half of the side length of a regular triangle corresponding to the Lelo triangle is the diameter of a corresponding semicircular arc; half of the perpendicular line of the regular triangle corresponding to the outer arc line of the tesla junction is L1, half of the perpendicular line of the regular triangle corresponding to the inner arc line is L2, L1 is 0.28-0.3 mm, and L2 is 0.19-0.22 mm.
2. The method of designing a D-band tesla junction coupling structure as claimed in claim 1, comprising the steps of:
step 1, designing a traditional strip line structure suitable for D-band transmission, wherein the traditional strip line structure comprises a dielectric constant epsilon of a dielectric substrate, a width w1, a thickness t1, a width w of a central metal conduction band and a thickness t;
step 2, constructing a No. 1 Tesla node in the strip line structure designed in the step 1;
firstly, constructing an outer arc of a Tesla junction by taking the midpoint of one side edge of a metal conduction band as the central point of a regular triangle, wherein the outer arc comprises an arc edge and a semi-arc of a Leluo triangle corresponding to the side length of the regular triangle, one end of the arc edge of the Leluo triangle is connected with one side edge of the metal conduction band, the other end of the arc edge of the Leluo triangle is connected with one end of the semi-arc, the other end of the semi-arc is connected with the side edge of the metal conduction band, and the arc edge of the Leluo triangle and the side edge of the metal conduction band connected with the semi-arc are the same side; ensuring that the center points of the Luoluo triangles of the internal and external arcs of the Tesla node coincide with each other and coincide with the middle point of the side edge of the metal conduction band; half of the perpendicular line of the regular triangle corresponding to the outer arc of the Tesla node is L1, and L1 is 0.28-0.3 mm;
then, the sizes of the arc line edge and the semi-arc of the Leluo triangle of the inner arc line of the Tesla node are obtained by reducing the side length of the regular triangle to which the outer arc line belongs, so that the size of the No. 1 Tesla node is determined; half of the perpendicular line of the regular triangle corresponding to the inner arc line of the Tesla node is L2, and L2 is 0.19-0.22 mm;
step 3, respectively moving the No. 1 Tesla junction back and forth along the length direction of the metal conduction band by the same distance d3 to obtain No. 2 and No. 3 junctions, wherein d3 is 0.7-0.96 mm;
and 4, adjusting L1, L2 and/or d3 to optimize the overall parameter performance and ensure that the whole coupling structure has a band stop effect.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116315548A (en) * 2023-04-12 2023-06-23 电子科技大学 X-band Euler Loose knot circulator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1119351A (en) * 1993-12-27 1996-03-27 松下电器产业株式会社 Resonator and high-frequency circuit element using the same
US20050242905A1 (en) * 2004-04-30 2005-11-03 Fujitsu Component Limited Filtering device and circuit module
US20070063794A1 (en) * 2003-05-22 2007-03-22 Kiyomichi Araki Ring filter and wideband band pass filter using therewith
WO2013147152A1 (en) * 2012-03-29 2013-10-03 国立大学法人電気通信大学 Transmission line resonator, band-pass filter employing transfer line resonator, splitter, synthesizer, band elimination filter, high-pass filter, balance filter, and low-pass filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1119351A (en) * 1993-12-27 1996-03-27 松下电器产业株式会社 Resonator and high-frequency circuit element using the same
US20070063794A1 (en) * 2003-05-22 2007-03-22 Kiyomichi Araki Ring filter and wideband band pass filter using therewith
US20050242905A1 (en) * 2004-04-30 2005-11-03 Fujitsu Component Limited Filtering device and circuit module
WO2013147152A1 (en) * 2012-03-29 2013-10-03 国立大学法人電気通信大学 Transmission line resonator, band-pass filter employing transfer line resonator, splitter, synthesizer, band elimination filter, high-pass filter, balance filter, and low-pass filter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116315548A (en) * 2023-04-12 2023-06-23 电子科技大学 X-band Euler Loose knot circulator
CN116315548B (en) * 2023-04-12 2024-03-26 电子科技大学 X-band Euler Loose knot circulator

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