CN114284673A - Substrate integrated waveguide dual-band filtering balun - Google Patents
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Abstract
The invention discloses a substrate integrated waveguide dual-band filtering balun which mainly comprises two substrate integrated waveguide circular cavities arranged back to back, a cross coupling groove, an input-output coupling structure, an input port and two differential output ports. The filtering balun is realized by adopting a laminated structure and utilizes the TE of a substrate integrated waveguide circular cavity201Die and TE102The method comprises the steps that a dual-frequency band is designed, the central frequency of a high-frequency band is changed by adjusting the length of perturbation of a linear metalized through hole in a circular cavity of a substrate integrated waveguide, the overall size of a filtering balun is reduced by utilizing a laminated structure, and the filtering balun is more than half of the filtering balun of the dual-frequency band of the existing planar dual-frequency band substrate integrated waveguide; in addition, the filtering balun is coupled through a cross groove between an upper substrate integrated waveguide circular cavity and a lower substrate integrated waveguide circular cavity which are arranged back to back, radiation of a coupling structure is avoided, and the transverse length and the longitudinal length of the cross coupling groove can be adjusted to respectively adjust the bandwidths of two pass bands.
Description
Technical Field
The invention belongs to the technical field of microwaves, relates to a substrate integrated waveguide dual-band filtering balun, and particularly relates to a small-size and high-performance dual-band filtering balun formed by laminating Substrate Integrated Waveguide Circular Cavities (SIWCCs).
Background
In a wireless communication system, a balun performs a single-ended signal and differential signal conversion function, and a filter performs channel selection and noise suppression. For a traditional radio frequency transceiving front-end circuit, a balun is generally cascaded with a filter, so that the conversion of a single-ended signal and a differential signal is realized while a filtering function is obtained, but the direct cascade of different circuits has the problems of large loss, large volume, impedance mismatch and the like. If the balun and the filter can be integrated into a whole, the balun structure with the filtering function is realized, and the overall loss and size are effectively reduced. At present, filtering balun for microstrip structure has been widely studied, but with the increase of operating frequency, the loss and radiation of microstrip structure will increase significantly. In contrast, Substrate Integrated Waveguides (SIW) have gained extensive research and application in the microwave field in recent years, including SIW structure-based filtering baluns, due to their advantages of low loss, low profile, fully enclosed, easy to machine, easy to integrate with other planar circuits, etc. However, these SIW filtering baluns can typically only filter in a single frequency band.
With the advent of the internet of things and the intelligent era, new requirements are put on mobile communication internet devices capable of supporting various wireless standards and protocols, and modern wireless communication systems are developing towards dual-band and multi-band. This has put new demands on wireless communication components such as dual-band filters, dual-band couplers, and dual-band filtering baluns, and therefore, there have been many studies on dual-band SIW filters and dual-band SIW couplers, but there have been few studies on dual-band SIW filtering baluns. Among them, a dual-band SIW filtering balun with high selectivity has been proposed, which is implemented on a single-layer PCB structure, and is composed of two complete SIW rectangular cavities (SIWRCs), the two cavities are placed left and right, but are offset in position, and for designing the functions of the balun, the two SIWRCs have different length-width ratios and different corresponding sizes, so that the design has the problems of large size and complicated design; in addition, in order to control the internal coupling of each passband, two different grounded coplanar waveguides (GCPW) are adopted between the two cavities, and the semi-open coupling structure has the problems of large loss and radiation interference on external equipment; in order to control the resonant frequency of the dual frequency bands, the length-width ratio of the SIWRC needs to be adjusted, and the change of the length-width ratio can change the coupling coefficient between the cavities, thereby further complicating the design. Moreover, as can be seen from the results of the design, the design also has the problem of narrow stopband bandwidth.
Aiming at the problems, the invention provides a novel dual-band filtering balun formed by laminating SIWCCs, which not only realizes miniaturization, but also has the advantages of high frequency selectivity, wide resistance band, low loss, simple design and the like.
Disclosure of Invention
The novel high-performance dual-band filtering balun formed by laminating the SIWCCs is characterized in that a dual band is designed by utilizing two degenerate modes of the SIWCCs (the central frequency of a high frequency band can be changed without changing the central frequency of a low frequency band by adjusting the length of a linear through hole array), the overall size of the filtering balun is reduced by utilizing a laminated structure, and the filtering balun is coupled by a cross slot between an upper SIWCC and a lower SIWCC, so that the radiation of a coupling structure is avoided, the loss of the structure is reduced, in addition, the bandwidths of two pass bands can be respectively adjusted by adjusting the transverse length and the longitudinal length of the cross slot, the design is very simple, and the novel high-performance dual-band filtering balun has the advantages of wide stop band, high selectivity, full sealing and the like.
The invention adopts the following technical scheme:
the invention provides a SIW dual-band filtering balun which comprises a first resonant cavity SIWCC, a second resonant cavity SIWCC, a cross coupling slot, an input-output coupling structure, an input port and two differential output ports.
The whole structure sequentially comprises a top metal layer, a first dielectric layer, a middle metal layer, a second dielectric layer and a bottom metal layer from top to bottom; a cross coupling groove is etched in the center of the middle metal layer;
the first resonant cavity SIWCC is formed by connecting a top metal layer, a middle metal layer and two first metalized through hole arrays penetrating through a first dielectric layer in a perturbation mode; the first metallized through hole array is in a circular ring shape; the first metallized via perturbation is located within the first metallized via array toroid;
the second resonant cavity SIWCC is formed by connecting a bottom metal layer, a middle metal layer and two second metalized through holes in a perturbation mode through a second metalized through hole array penetrating through a second dielectric layer; the second metallized through hole array is in a circular ring shape; the second metalized through hole perturbation is positioned in the second metalized through hole array circular ring;
the first resonant cavity SIWCC and the second resonant cavity SIWCC are arranged back to back, and the middle metal layer is a common metal ground; energy coupling is carried out between the first resonant cavity SIWCC and the second resonant cavity SIWCC through a cross coupling slot in the middle metal layer;
the input port is connected with the top metal layer, and an input coupling gap is arranged at the joint of the input port and the top metal layer; a first coupling window is arranged below the input port of the first metalized through hole array; the first coupling window is not provided with a first metallized through hole;
the two differential output ports are connected with the bottom metal layer, and output coupling gaps are formed at the connection positions of the two differential output ports and the bottom metal layer; a second coupling window is arranged above the output port of the second metalized through hole array; the second coupling window is not provided with a second metalized through hole;
the input port is coupled with the first resonant cavity SIWCC through an input end coupling structure, wherein the input end coupling structure comprises a first coupling window and an input coupling gap;
the two differential output ports are coupled with the second resonant cavity SIWCC through an output end coupling structure, wherein the output end coupling structure comprises a second coupling window and an output coupling gap;
preferably, the first metalized through hole perturbation and the second metalized through hole perturbation are not connected with the first metalized through hole array, the second metalized through hole array and the cross coupling groove;
preferably, the input port and the two differential output ports are both formed by 50 ohm microstrip lines;
preferably, the two differential output ports are arranged perpendicular to the input port; the two differential output ports are opposite in direction;
preferably, the cross coupling slot comprises a first straight slot and a second straight slot which are orthogonal; the included angle between the input port microstrip line and the first linear slot and the included angle between the input port microstrip line and the second linear slot are 45 degrees; the included angles between the two differential output ports and the first linear groove and the second linear groove are both 45 degrees;
preferably, the input coupling slits include first linear slits located at both sides of the input port and first arc-shaped slits connected to top ends of the linear slits and extending to both sides;
more preferably, the center of the first arc-shaped gap coincides with the center of the first resonant cavity SIWCC;
preferably, the output coupling slits comprise second linear slits positioned at two sides of the output port and second arc-shaped slits connected with the top ends of the linear slits and extending towards two sides;
more preferably, the center of the second arc-shaped gap coincides with the center of the second resonant cavity SIWCC;
preferably, the radius of the first resonator SIWCC cavity is different from that of the second resonator SIWCC cavity;
preferably, the first metalized through hole perturbation and the second metalized through hole perturbation are linear;
preferably, the first metalized via perturbation and the second metalized via perturbation have different lengths;
preferably, the two first metalized through holes are positioned on the same straight line in a perturbation mode, and the straight line is superposed with the straight line where the first straight line groove in the cross-shaped coupling groove is positioned; the two first metallized through holes are distributed at two ends of the first straight line groove in a perturbation mode; the perturbation of the second metallized through hole is positioned on the same straight line, and the straight line is superposed with the straight line where the first straight line groove in the cross coupling groove is positioned; the two second metalized through holes are distributed at two ends of the first straight line groove in a perturbation mode;
preferably, the first metallized via perturbation length is d1By regulatingSection d1Can change the length of TE in the first resonator SIWCC102The resonant frequency of the mode; the perturbation length of the second metallized via hole is d2By adjusting d2Can change the length of TE in the second resonator SIWCC102The resonant frequency of the mode. The invention utilizes two higher order degenerate modes (TE) of the SIWCC201And TE102Mode) to design a dual frequency band by adjusting the length (d) of the metalized via perturbation1And d2) Controlling the passband interval of the dual-band filter, wherein the length of the metallized via hole perturbation is in direct proportion to the passband interval of the dual-band filter;
preferably, the size of the cross coupling slot can control the TE in the first and second resonators SIWCC and SIWCC102Die and TE201The degree of coupling of the modes.
The invention has the following advantages:
(1) the SIWCC laminated structure is adopted, the size of the filter is reduced, and the area of the filter is 49.5% of that of the existing planar SIW dual-band filtering balun;
(2) the structure is completely closed, so that radiation loss and interference with other circuits are avoided;
(3) the frequency band interval of the double frequency bands is controlled by the length of the perturbation of the metalized through hole, and the design is simple;
(4) the lower stopband parasitic passband is smaller than-26.5 dB in amplitude, and the upper stopband parasitic passband is positioned at the frequency which is 1.46 times of the high-frequency passband;
(5) a transmission zero point is arranged between the high frequency band and the low frequency band, so that the high-frequency band and the low-frequency band have better frequency selectivity;
(6) the phase difference output by the two ports has good stability in a working frequency band, and the phase difference of 180 degrees output by the two ports is always kept.
Drawings
Fig. 1 is a schematic three-dimensional structure of the present invention.
FIGS. 2(a), (b), and (c) are schematic diagrams of a top metal layer structure, a bottom metal layer structure, and a middle metal layer structure, respectively.
FIG. 3 is TE in SIWCC101A mould,TE201Die and TE102The resonant frequency of the mode is a function of the perturbation length of the metallized through hole in the cavity.
FIG. 4 is TE in SIWCC201Die and TE102The electric field profile of the mode.
Fig. 5 shows the topology adopted by the filtering balun designed by the present invention.
Fig. 6(a), (b), and (c) are respectively a frequency response curve, an output amplitude difference response curve of two output ports, and a phase difference response curve of two output ports of the present invention.
The labels in the figure are: the circuit comprises a top metal layer 1, a first medium layer 2, a middle metal layer 3, a second medium layer 4, a bottom metal layer 5, a first port 6, a second port 7, a third port 8, metalized through hole arrays 9 and 10 which are circularly arranged, metalized through hole perturbations 11 and 12, a cross coupling groove 13, an input end coupling structure 14 and an output end coupling structure 15.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1-2, the SIW dual-band filtering balun provided by the present invention includes a top metal layer 1, a first dielectric layer 2, a middle metal layer 3, a second dielectric layer 4, a bottom metal layer 5, a first port (i.e., an input port) 6, a second port (i.e., an output port) 7, a third port (i.e., an output port) 8, metalized via arrays 9 and 10 arranged in a circular manner, metalized via perturbations 11 and 12, a cross coupling slot 13, an input end coupling structure 14, and an output end coupling structure 15;
the first port 6, the second port 7 and the third port 8 are all composed of 50 ohm micro-strips; the metallized through hole array 9 and the metallized through hole perturbation 11 which are circularly arranged penetrate through the first medium layer 2 and are connected with the top metal layer 1 and the middle metal layer 3 to jointly form a first resonant cavity SIWCC; the metallized through hole array 10 and the metallized through hole perturbation 12 which are circularly arranged penetrate through the second dielectric layer 4 and are connected with the middle metal layer 3 and the bottom metal layer 5 to jointly form a second resonant cavity SIWCC.
The first resonant cavity SIWCC and the second resonant cavity SIWCC are all complete SIW circular cavities, so that the whole resonator is ensuredThe structure has a closed structure, the two cavities have different radiuses and the lengths of the corresponding metallized through hole perturbations, wherein the radius of the first resonant cavity SIWCC is r1The radius of the second resonator SIWCC is r2(ii) a The metallized via perturbation 11 is located in the first resonator SIWCC with a length d1The metallized through hole perturbation 11 is positioned on the same straight line, and the straight line is superposed with the straight line where any straight line groove in the cross coupling groove is positioned; the metallized through hole perturbation 11 is distributed at two ends of the first straight line groove and is adjusted by adjusting d1Can change the length of TE in the first resonator SIWCC102Resonant frequency of the mode, and d1Length of (D) and TE102The resonant frequency of the mode is proportional; the metallized via perturbation 12 is located in the second resonator SIWCC with a length d2The metallized through hole perturbations 12 and the metallized through hole perturbations 11 have the same distribution pattern by adjusting d2Can change the length of TE in the second resonator SIWCC102Resonant frequency of the mode, and d2Length of (D) and TE102The resonant frequency of the mode is proportional. The invention utilizes two higher order degenerate modes (TE) of the SIWCC201And TE102Mode) to design a dual frequency band by adjusting the length (d) of the metalized via perturbation1And d2) The pass band spacing of the dual band filter is controlled.
The first resonant cavity SIWCC and the second resonant cavity SIWCC are coupled with each other by energy through a cross coupling groove 13 in the middle metal layer 3, the cross coupling groove 13 is positioned at the center of the whole structure, and the width of a groove line in the cross groove is w3The lengths of two orthogonal slot lines are respectively l3、l4. By changing l3Can control TE102Degree of coupling of modes, TE201The mode is not affected; by changing l4Can control TE201Degree of coupling of modes, TE102The mode is not affected.
The first port 6 is coupled to the first resonator SIWCC via an input coupling structure 14 and the second port 7 and the third port 8 are coupled to the second resonator SIWCC via an output coupling structure 15. Wherein the input end coupling structure 14 is mainly formed by a width ofs1The length and width of the coupling window distributed on two sides of the 50 ohm microstrip line are respectively l1、w1Two linear slits of width w1Angle of theta1Two sections of arc-shaped gaps; the output end coupling structure 15 mainly comprises a width s2The coupling windows are distributed on two sides of the 50 ohm microstrip line and have the length and the width of l2、w2Two linear slits of width w2Angle of theta2Two sections of arc-shaped gaps.
The two cavities adopted by the invention are SIW circular cavities, the radiuses of all the metallized through holes are r, and the distance between every two adjacent through holes is d; the first dielectric layer 2 and the second dielectric layer 4 are both made of 0.508mm thick Rogers RT/dueoid 5880(tm) dielectric substrate, and the relative dielectric constant of the Rogers RT/dueoid 5880(tm) dielectric substrate is 2.2.
FIG. 3 is TE in SIWCC101Mold, TE201Die and TE102The resonant frequency of the mode is a function of the perturbation length of the metallized through hole in the cavity. As can be seen, the perturbation length d of the via hole when metalized1(d2) Increasing the main mode TE101Resonant frequency of the mode with d1(d2) Is continuously increased, TE for two degenerate modes of SIWCC201The resonant frequency of the mode remains constant while TE102The resonant frequency of the mode will also follow d1(d2) Is increasing. Therefore, based on the characteristics, the high-frequency passband frequency of the dual-band filter can be conveniently controlled by adjusting the length of the metallized through hole perturbation, and the low-frequency passband frequency of the dual-band filter can be controlled by the cavity radius of the SIWCC.
FIG. 4 is TE in SIWCC201Die and TE102The electric field profile of the mode. As can be seen, TE201The XZ plane is taken as a symmetry plane of the mode, and the directions of electric fields on the left side and the right side of the mode are opposite (the amplitudes are the same, and the phases are opposite); TE102The mode takes a YZ plane as a symmetrical plane, and the directions of electric fields at the upper side and the lower side of the mode are opposite (the amplitudes are the same, and the phases are opposite). Therefore, by adding the input port at the end P1 and the output ports at the ends P2 and P3, the phases of the output electric fields of the two ports will always be kept in phase in the two modesThe bit is opposite, and the amplitude is the same, thereby realizing the function of generating differential signal output by the balun.
FIG. 5 is a topological structure diagram of the present invention, wherein resonant mode 1(A) and resonant mode 1(B) respectively represent TE of the first resonant cavity SIWCC201Die and TE102The mode, resonant mode 2(A) and resonant mode 2(B) respectively represent TE of the second resonator SIWCC201Die and TE102Mode, input port through Ms1(A)，MS1(B)TE with first resonator SIWCC201Die and TE102Mode coupling, TE of a first resonator SIWCC and a second resonator SIWCC102Die and TE201The dies passing respectively through M12(A)And M12(B)Coupling is carried out, and the low-frequency bands of the last two output ports respectively pass through M2L-(A)And M2L+(A)Coupled with the second resonant cavity SIWCC, the high-frequency bands of the two output ports pass through M respectively2L-(B)And M2L+(B)Coupled to the second resonator SIWCC.
Fig. 6(a), (b), and (c) are respectively a frequency response curve, an amplitude difference response curve of two output ports, and a phase difference response curve of two output ports of the present invention. As can be seen from fig. 6(a), the filtering balun functions as a dual-band bandpass filter, the center frequency of the low frequency band is 10GHz, and the bandwidth is 0.16 GHz; the center frequency of the high-frequency band is 12GHz, the bandwidth is 0.2GHz, and a transmission zero point is generated between the high-frequency band and the low-frequency band, so that the frequency selectivity of the filter balun is improved, and in addition, the invention is used for a main mode (TE)101) Is small, at the resonance frequency of the main mode, its S21And S31The lower stop band bandwidth is wider because of-26.5 dB, and the parasitic pass band of the upper stop band is positioned near 17.5GHz, so the upper stop band bandwidth of the invention is also wider, reaching more than 46% of the high-frequency band. As can be seen from fig. 6(b), the output powers of the two output ports of the filtering balun are the same, and the amplitude difference between the two output ports is very small, which meets the requirement of the three-port balun for equal power output of the two output ports. As can be seen from fig. 6(c), the phase difference between the two output ports of the filtering balun is 180 degrees in both frequency bands, so the two output ports of the filtering balun have opposite phasesAnd has the capability of generating differential signal outputs.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (10)
1. A substrate integrated waveguide dual-band filtering balun is characterized by comprising a first resonant cavity SIWCC, a second resonant cavity SIWCC, a cross coupling slot, an input-output coupling structure, an input port and two differential output ports;
the whole structure sequentially comprises a top metal layer, a first dielectric layer, a middle metal layer, a second dielectric layer and a bottom metal layer from top to bottom; a cross coupling groove is etched in the center of the middle metal layer;
the first resonant cavity SIWCC is formed by connecting a top metal layer, a middle metal layer and two first metalized through hole arrays penetrating through a first dielectric layer in a perturbation mode; the first metallized through hole array is in a circular ring shape; the first metallized via perturbation is located within the first metallized via array toroid;
the second resonant cavity SIWCC is formed by connecting a bottom metal layer, a middle metal layer and two second metalized through holes in a perturbation mode through a second metalized through hole array penetrating through a second dielectric layer; the second metallized through hole array is in a circular ring shape; the second metalized through hole perturbation is positioned in the second metalized through hole array circular ring;
the first resonant cavity SIWCC and the second resonant cavity SIWCC are arranged back to back, and the middle metal layer is a common metal ground; energy coupling is carried out between the first resonant cavity SIWCC and the second resonant cavity SIWCC through a cross coupling slot in the middle metal layer;
the input port is connected with the top metal layer, and an input coupling gap is arranged at the joint of the input port and the top metal layer; a first coupling window is arranged below the input port of the first metalized through hole array;
the two differential output ports are connected with the bottom metal layer, and output coupling gaps are formed at the connection positions of the two differential output ports and the bottom metal layer; a second coupling window is arranged above the output port of the second metalized through hole array;
the input port is coupled with the first resonant cavity SIWCC through an input end coupling structure, wherein the input end coupling structure comprises a first coupling window and an input coupling gap;
the two differential output ports are coupled with the second resonant cavity SIWCC through an output end coupling structure, wherein the output end coupling structure comprises a second coupling window and an output coupling gap.
2. The substrate-integrated waveguide dual-band filtering balun according to claim 1, wherein said first metallized via perturbation and said second metallized via perturbation are not connected to said first metallized via array, said second metallized via array and said cross coupling slot.
3. The substrate integrated waveguide dual-band filtering balun according to claim 1, characterized in that the input port and the two differential output ports are both formed by 50 ohm microstrip lines.
4. The substrate integrated waveguide dual-band filtering balun according to claim 1, wherein said two differential output ports are arranged perpendicular to said input port; the two differential output ports are opposite in direction.
5. The substrate integrated waveguide dual-band filtering balun according to claim 4, characterized in that said cross coupling slot comprises two orthogonal first and second linear slots; the included angle between the input port microstrip line and the first linear slot and the included angle between the input port microstrip line and the second linear slot are 45 degrees; the included angles between the two differential output ports and the first linear groove and the second linear groove are both 45 degrees.
6. The substrate integrated waveguide dual-band filtering balun according to claim 1, wherein said input coupling slots comprise a first linear slot on both sides of the input port and a first arcuate slot connected to the top of the linear slot and extending to both sides; the center of the first arc-shaped gap is superposed with the center of the first resonant cavity SIWCC;
the output coupling gaps comprise second linear gaps positioned at two sides of the output port and second arc-shaped gaps which are connected with the top ends of the linear gaps and extend towards two sides; the center of the second arc-shaped gap is superposed with the center of the second resonant cavity SIWCC.
7. The substrate integrated waveguide dual-band filtering balun according to claim 1, characterized in that the first resonator SIWCC cavity and the second resonator SIWCC cavity have different radii.
8. The substrate integrated waveguide dual-band filtering balun according to claim 1 or 7, characterized in that the first metallized via perturbation and the second metallized via perturbation are both linear; the first metalized via perturbation and the second metalized via perturbation have different lengths.
9. The substrate integrated waveguide dual-band filtering balun according to claim 1, characterized in that the two first metallized via perturbations are located on a same straight line, and the straight line coincides with a straight line where the first straight line slot in the cross coupling slot is located; the two first metallized through holes are distributed at two ends of the first straight line groove in a perturbation mode; the perturbation of the second metallized through hole is positioned on the same straight line, and the straight line is superposed with the straight line where the first straight line groove in the cross coupling groove is positioned; the two second metalized through holes are distributed at two ends of the first straight line groove in a perturbation mode.
10. The substrate integrated waveguide dual-band filtering balun according to claim 1, characterized in that the perturbation length of the first metallized via is d1By adjusting d1By varying the length of TE in the first resonator SIWCC102The resonant frequency of the mode; the perturbation length of the second metallized via hole is d2By adjusting d2By changing the length ofTE in two-resonant-cavity SIWCC102The resonant frequency of the mode; two higher order degenerate modes TE using SIWCC201And TE102The dual frequency bands are designed by the mode, and the length d of the perturbation of the metallized through hole is adjusted1And d2The passband spacing of the dual band filter is controlled and the length of the metallized via perturbation is proportional to the passband spacing of the dual band filter.
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|---|---|
| CN114284673B (en) | 2022-12-13 |
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