CN114188232A - Chip packaging mold, chip packaging body and packaging method - Google Patents
Chip packaging mold, chip packaging body and packaging method Download PDFInfo
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- CN114188232A CN114188232A CN202111088026.2A CN202111088026A CN114188232A CN 114188232 A CN114188232 A CN 114188232A CN 202111088026 A CN202111088026 A CN 202111088026A CN 114188232 A CN114188232 A CN 114188232A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004033 plastic Substances 0.000 claims abstract description 93
- 229920003023 plastic Polymers 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 238000001179 sorption measurement Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000002347 injection Methods 0.000 claims description 32
- 239000007924 injection Substances 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 9
- 239000008393 encapsulating agent Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000005022 packaging material Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000012858 packaging process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14819—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being completely encapsulated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a chip packaging mold, a chip packaging body and a packaging method, wherein the packaging mold comprises: the first die and the second die are respectively provided with openings and are combined oppositely to form at least one cavity, and the cavity is used for accommodating the lead frame and a chip connected with the lead frame; the first mold further comprises adsorption channels, each cavity corresponds to at least one adsorption channel, the adsorption channels penetrate through the first mold and reach the inner surface of the opening of the first mold, the adsorption channels are used for applying negative pressure before the plastic package material is injected, so that the metal film is adsorbed on the inner surface of the opening of the first mold, and the metal film is adhered to the surface of the plastic package body after the plastic package material is injected. The chip packaging body formed by the invention has better electromagnetic shielding effect, does not reduce along with the lapse of time, does not occupy extra area, and can be suitable for the condition of high-density use of chip packaging.
Description
Technical Field
The invention relates to the technical field of chip packaging, in particular to a chip packaging mold, a chip packaging body and a packaging method.
Background
In the fabrication of integrated circuits, chips are obtained by the steps of wafer fabrication, forming integrated circuits, and dicing wafers. After the integrated circuit of the wafer is manufactured, the chips formed by cutting the wafer can be electrically connected to a lead Frame (bond Frame, L/F for short) outwards; the chip can be electrically connected to the lead frame by wire bonding or flip chip bonding. If the chip and the lead frame are electrically connected in a wire bonding manner, the manufacturing step of filling the sealant is performed to form a chip package. The chip packaging technology is a process technology for wrapping a chip to avoid the chip from contacting with the outside and preventing the chip from being damaged by the outside.
The traditional metal and ceramic shells are generally replaced by plastics in the packaging materials adopted in the existing packaging technology, but the chip packaged and wrapped by the common plastics is very easy to generate misoperation due to external electromagnetic interference (EMI), thereby bringing serious consequences.
The existing scheme for shielding electromagnetic interference comprises the following steps:
1. and coating conductive polymer paint outside the packaging material. The conductive coating can be conveniently brushed on the surfaces of materials with various shapes to form a conductive coating to play a certain role of electromagnetic shielding, but the coating can be oxidized and fall off in the using process, so that the shielding efficiency is reduced.
2. A metal shielding can is placed outside the plastic packaging body so as to isolate electromagnetic interference. The method occupies a large area and is not easy to be used for packaging high-density use.
Therefore, there is a need to provide an improved technical solution to overcome the above technical problems in the prior art.
Disclosure of Invention
In order to solve the technical problems, the invention provides a chip packaging mold, a chip packaging body and a packaging method.
According to a first aspect of the present disclosure, there is provided a chip packaging mold, including: the first die and the second die are respectively provided with an opening and are combined oppositely to form at least one cavity, and the cavity is used for accommodating a lead frame and a chip connected with the lead frame; and
a plurality of material injection channels which penetrate through the first mould and the second mould, are communicated with the cavity and are used for injecting plastic package materials to form a plastic package body,
the first mold further comprises an adsorption channel, each cavity corresponds to at least one adsorption channel, the adsorption channels penetrate through the first mold and reach the inner surface of the opening of the first mold, the adsorption channels are used for applying negative pressure before plastic package materials are injected, so that the metal film is adsorbed on the inner surface of the opening of the first mold, and the metal film is adhered to the surface of the plastic package materials after the plastic package materials are injected.
Optionally, the adsorption channel adheres the adsorbed metal film to the surface of the plastic package in a cooling and hardening process after the injection of the plastic package material is completed; or
And the adsorption channel adheres the adsorbed metal film to the surface of the plastic package based on an adhesive after the plastic package material is completely hardened.
Optionally, the adsorption channel is funnel-shaped, and a dimension of the adsorption channel near one end of the cavity is larger than a dimension of the adsorption channel far away from one end of the cavity.
Optionally, when only one adsorption channel is correspondingly arranged in one cavity, the adsorption channel is arranged in the geometric center area of the upper surface of the corresponding cavity.
Optionally, the metal film is attached to an inner surface of the opening of the first mold in an adsorbed state.
Optionally, the negative pressure is provided by a negative pressure device in communication with the adsorption channel.
Optionally, when a plurality of adsorption channels are correspondingly arranged in one cavity, the adsorption channels are communicated with each other, and the negative pressure is provided by the same negative pressure device.
According to a second aspect of the present disclosure, there is provided a chip package formed via the package mold package as described above, the chip package comprising:
a lead frame;
the chip is arranged on the lead frame and is electrically connected with the lead frame;
the plastic package body wraps the chip;
and the metal film is adhered to the surface of the plastic package.
Optionally, the metal film is adhered to the upper surface and part of the side surface of the plastic package body.
Optionally, the distance between the metal film adhered to the side surface of the plastic package and the pin of the chip package is greater than a preset threshold.
Optionally, the thickness of each portion of the metal film is equal.
Optionally, the metal film has a thickness of 0.1-0.9 mm.
Alternatively, the material for forming the metal film includes any one of aluminum and copper.
According to a third aspect of the present disclosure, there is provided a chip packaging method, including: providing a lead frame;
arranging a chip on the lead frame and electrically connecting the chip with the lead frame;
placing a lead frame provided with a chip in the cavity of the chip packaging mold, and injecting a plastic package material into the chip packaging mold to form a plastic package body for coating the chip and the lead frame;
and after the injection of the plastic package material is finished, adhering the metal film adsorbed by the chip package mold to the surface of the plastic package body to integrally form a chip package body.
Optionally, adhering the metal film adsorbed by the chip packaging mold to the surface of the plastic package in a cooling and hardening process after the injection of the plastic package material is completed; or
And adhering the adsorbed metal film to the surface of the plastic package based on an adhesive after the injection of the plastic package material is finished and the plastic package material is completely hardened.
The invention has the beneficial effects that: according to the chip packaging mold and the packaging method provided by the invention, the adsorption channel is arranged on the mold to adsorb the metal film, so that the adsorbed metal film can be directly adhered to the surface of the plastic packaging body formed by the plastic packaging material after the injection of the plastic packaging material is finished to integrally form the chip packaging body with the metal film on the surface. Meanwhile, the chip packaging body formed based on the die and the method has better electromagnetic shielding effect, does not decrease along with the lapse of time, does not occupy extra area, and can be suitable for the condition of high-density use of chip packaging.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
FIGS. 1a to 1f are schematic views showing a flow of packaging a chip by a chip packaging mold;
fig. 2 illustrates a cross-sectional view of a chip package mold provided in accordance with an embodiment of the present disclosure;
fig. 3 illustrates a cross-sectional view of a chip package provided in accordance with an embodiment of the present disclosure;
fig. 4 shows a flow chart of a chip packaging method provided according to an embodiment of the disclosure.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Referring to fig. 1a to 1f, in the process of packaging a semiconductor chip using a chip packaging mold, there are generally included: as shown in fig. 1a, a chip package mold of an empty mold is prepared, the package mold including: a first mold 10 and a second mold 20 disposed at opposite positions, the first mold 10 and the second mold 20 having openings respectively and being combined with each other to form a cavity 30; as shown in fig. 1b, the lead frame 3 provided with the chip 1 is placed in the cavity 30, and the chip 1 is electrically connected to the lead frame 3; as shown in fig. 1c, closing the mold, and closing the first mold 10 and the second mold 20; as shown in fig. 1d, injecting glue, injecting molten plastic package material into the cavity 30 through the material injection channel 11 and the material injection channel 12 to form a plastic package body 7 covering the chip 1 and the lead frame 3; as shown in fig. 1e, opening the mold, and separating the first mold 10 from the upper surface of the plastic package body 7 after the plastic package material is cooled and hardened; as shown in fig. 1f, the second mold 20 is separated from the lower surface of the plastic package body 7.
The first mold 10 is improved on the basis of the chip packaging mold, and based on the improved chip packaging mold, a metal film can be integrally formed on a plastic package body of the chip package body in the process of forming the chip package body, so that the problems in the prior art are solved.
In the embodiment of the present invention, as shown in fig. 2, the improved chip packaging mold specifically includes: a first mold 10, a second mold 20, a cavity 30, a plurality of injection channels, and an adsorption channel 13.
The first mold 10 and the second mold 20 are disposed opposite to each other, the first mold 10 and the second mold 20 respectively have openings and are combined with each other to form at least one cavity 30, and the cavity 30 is used for accommodating a lead frame and a chip connected to the lead frame. Further, when the number of the cavities 30 formed after the first mold 10 and the second mold 20 are combined to face each other is plural, a communication passage for communicating two or more cavities 30 may be formed.
The plurality of injection channels penetrate through the first mold 10 or the first mold 10 and the second mold 20 and communicate with the cavity 30, and at the packaging stage after the first mold 10 and the second mold 20 are combined with each other, the molten molding compound can be injected into the cavity 30 through the plurality of injection channels to form a molding compound covering the lead frame and the chip. The injection channels are not shown in fig. 2 of the present disclosure, but it is understood that the plurality of injection channels may be disposed at any region on the first mold 10 or the first and second molds 10 and 20 as long as the subsequent adsorption and adhesion processes to the metal film 8 are not affected, and the metal film 8 in a non-adsorbed state affects the injection process. Meanwhile, it can be understood that the number of the plurality of injection channels is not limited in the present invention, as long as the molding compound can be ensured to fill each cavity 30 on the chip packaging mold as required during the injection.
The adsorption channel 13 is disposed on the first mold 10 above the cavity 30, penetrates through the first mold 10 and reaches the inner surface of the opening of the first mold 10, and further communicates with the cavity 30 to adsorb the metal film 8 based on negative pressure.
The adsorption channel 13 is also communicated with a negative pressure device, and the negative pressure device provides negative pressure when adsorbing the metal film 8.
The adsorption passage 13 is used to adsorb the metal film 8 on the inner surface of the opening of the first mold 10 based on a negative pressure before injecting the molding compound, and the metal film 8 adheres to the surface of the plastic package after injecting the molding compound.
In this embodiment, the adsorption channel 13 is, for example, funnel-shaped, and a size of an end of the adsorption channel 13 close to the cavity 30 is larger than a size of an end of the adsorption channel 13 far from the cavity 30. In this way, the adsorption area of the metal film 8 can be increased, and sufficient adsorption force of the metal film 8 can be ensured.
In this embodiment, the metal film 8 is attached to the inner surface of the opening of the first mold 10 in an adsorbed state. Therefore, a gap between the inner surface of the opening of the metal film 8 and the inner surface of the opening of the first mold 10 can be avoided, the adsorption effect can be improved, the metal film 8 can be prevented from falling off accidentally in the packaging process, and meanwhile, the metal film 8 in the finally formed chip packaging body can be completely positioned on the outer surface of the packaging body, so that the shielding effect on electromagnetic interference is ensured.
Further, the number of the suction passages 13 provided on the first mold 10 is plural, and each cavity 30 corresponds to at least one suction passage 13. Alternatively, a plurality of suction passages 13 may be communicated with each other, and a negative pressure is provided by the same negative pressure device, thus contributing to a reduction in packaging cost in mass packaging; or when a plurality of adsorption channels 13 are correspondingly arranged in one cavity 30, the plurality of adsorption channels 13 corresponding to the cavity 30 are at least ensured to be communicated with each other, so that the metal film 8 can be ensured to generate reliable adsorption force, and the flexible control of the adsorption force generated in the cavities is facilitated.
In the present disclosure, when only one adsorption passage 13 is correspondingly disposed in one cavity 30, the adsorption passage 13 is disposed in a geometrically central region corresponding to the upper surface of the cavity 30. Therefore, the metal film 8 can be stably adsorbed under the action of only one adsorption force, the metal film 8 in an adsorbed state can be tightly attached to the inner surface of the opening of the first mold 10, all parts of the metal film 8 can have good adhesion when being in contact with molten plastic packaging materials, and the upper surface of a chip packaging body formed after packaging is completed can have good levelness.
When the chip is plastically packaged by the chip packaging mold provided by the invention, the plastic packaging material is injected into each cavity 30 through the plurality of material injection channels and coats the lead frame and the chip positioned in the cavity 30 to form a plastic packaging body, and the adsorption channel 13 adheres the adsorbed metal film 8 to the surface of the plastic packaging body after the injection of the plastic packaging material is finished, so that the chip packaging body is integrally formed. The chip packaging body formed based on the chip packaging mold has better electromagnetic shielding effect, can not be reduced along with the lapse of time, can not occupy extra area, and can be suitable for the condition of high-density use of chip packaging.
Preferably, the adsorption channel 13 adheres the adsorbed metal film 8 to the surface of the plastic encapsulant during the cooling and hardening process after the injection of the plastic encapsulant is completed. After the molten molding compound is injected into the cavity 30, the adhesion of the metal film 8 is realized through the adhesion of the molten molding compound in the cooling and hardening process of the cavity, which is beneficial to the integrated formation of the chip package body, and the operation steps are simple, the production efficiency is high, and the method can be suitable for mass production. It should be noted that, adhering the adsorbed metal film 8 to the surface of the plastic encapsulant in the cooling and hardening process after the injection of the plastic encapsulant is completed is only one preferred embodiment of the present invention, and in other embodiments of the present invention, the metal film 8 may be adhered to the surface of the plastic encapsulant by using an additional adhesive after the plastic encapsulant is completely hardened, and the above-mentioned effects can be achieved by using only the existing chip encapsulation mold without modifying the chip encapsulation mold. Such a method of implementation is also intended to be within the scope of the present invention.
In the present disclosure, a packaging process when the semiconductor chip is packaged by using the above chip packaging mold is shown in fig. 4, and specifically includes the following steps.
In step S01, a lead frame is provided.
Optionally, the lead frame includes, for example, a pin portion and a chip pad portion.
In step S02, a chip is placed on and electrically connected to the lead frame.
In this embodiment, the chip may be bonded to the chip pad portion of the lead frame by using conductive silver paste, for example, and the pins of the chip may be electrically connected to the pin portions of the lead frame by using a flip chip process or a bonding wire process, for example. The appropriate electrical connection process can be selected according to the packaging type of the chip.
In step S03, the lead frame provided with the chip is placed in a cavity of a chip packaging mold as shown in fig. 2, and a molding compound is injected into the chip packaging mold to form a molding compound covering the chip and the lead frame.
In this embodiment, referring to fig. 1a to 1d, step S03 generally includes mold opening, mold closing, and glue injection processes. Opening the die, namely adsorbing the metal film on the inner surface of the opening of the first die in the state that the first die and the second die are separated, and placing the lead frame provided with the chip in the cavity; closing the mold, namely closing the first mold and the second mold; and (3) injecting glue, namely injecting the molten plastic packaging material into the cavity through the material injection channel so that the chip and the lead frame are coated by the plastic packaging material.
In step S04, after the injection of the molding compound is completed, the metal film adsorbed by the die is adhered to the surface of the plastic package to integrally form the chip package.
Preferably, the step S04 further includes adhering the metal film adsorbed by the chip packaging mold to the surface of the plastic package during the cooling and hardening process after the injection of the plastic package material is completed. In this embodiment, the molding compound can be pressurized during the injection process of the molding compound, so that the entire cavity can be filled with the molding compound more easily. Meanwhile, the molten plastic package material has certain cohesiveness, so that the plastic package material can automatically contact and adhere to the metal plate adsorbed on the inner surface of the opening of the first mold when the whole cavity is filled with the plastic package material, and the metal film can be directly adhered to the surface of the plastic package after the plastic package material is cooled and hardened. At the moment, the chip packaging body integrally formed with the metal film can be obtained after the die is opened only by canceling the negative pressure for adsorbing the metal film, the chip packaging body can have a better electromagnetic shielding effect without extra operation, the operation steps are simple, the production efficiency is high, high matching is easily realized between the metal film and the plastic packaging body, and the chip packaging body can be suitable for mass production.
In other embodiments of the present invention, the metal film 8 may be adhered to the surface of the plastic package by using an additional adhesive or the like after the plastic package is completely hardened. Although the effect of integrally forming the chip package cannot be achieved by the implementation method, the implementation method is also within the protection scope of the present invention.
In the embodiment of the invention, taking the QFP packaging process as an example, the chip package shown in fig. 3 can be finally formed through the above-described chip package mold and packaging method. The chip package includes: the chip comprises a chip 1, a lead frame, a heat radiator 4, a plastic package body 7 and a metal film 8.
The chip 1 is disposed on and electrically connected to the lead frame. In the present embodiment, the lead frame includes a chip pad 3 and a pin 2. The chip 1 is arranged on the upper surface of the chip pad 3 through conductive silver paste 5 and is electrically connected with the pin 2 through a bonding wire 6. The plastic package body 6 covers the chip 1. The metal film 8 adheres to the surface of the plastic package body 7.
In this embodiment, the metal film 8 is adhered to the upper surface and a part of the side surface of the plastic package body 7. And the distance between the part of the metal film 8 adhered to the side surface of the plastic package body 7 and the chip package body pin 2 is larger than a preset threshold value. Therefore, the short circuit problem of the pins of the package caused by the too close distance between the pins 2 and the metal film 8 can be avoided. The short circuit problem can be further avoided by shortening the length of the portion of the metal film 8 that is adhered to the side of the plastic-sealed body 7 in the present invention. Meanwhile, as the length of the metal film 8 adhered to the side surface of the plastic package body 7 is shortened, the electromagnetic shielding effect of the chip package body is also reduced, and therefore, in practical applications, the length of the metal film 8 adhered to the side surface of the plastic package body 7 should be set reasonably by comprehensively considering the electromagnetic shielding effect and the short circuit prevention problem.
In this embodiment, the thickness of each portion of the metal film 8 is equal everywhere. Thus, the shielding effect against electromagnetic interference can be further increased. Further, the thickness of the metal film 8 is 0.1 to 0.9 mm. In the invention, the good electromagnetic shielding effect can be realized only by the thickness of the thin metal film 8, and the invention has light weight and low cost.
Preferably, the material of the metal film 8 includes any one of aluminum (including aluminum alloy) and copper (including copper alloy). The aluminum has low density, and the mass of the chip packaging body can be reduced under the same volume; and the pure copper has better conductivity and better shielding effect on electromagnetic interference under the same thickness. In addition, the material for forming the metal film 8 includes, but is not limited to, only any one of aluminum and copper, and the kind of metal may be selected according to actual needs in a specific application.
The manufacturing process of the metal film 8 in the present invention is also simple, and mass production can be performed by, for example, die stamping or pouring. In addition, the QFP packaging process in the present invention is only exemplary, and the packaging method shown in the present invention is also applicable to other chip packaging processes such as FC, QPN, SOT, etc., wherein the specific shape of the metal film 8 only needs to be changed according to different process standards.
In summary, the adsorption channel is arranged on the mold to adsorb the metal film, so that after the injection of the plastic package material is finished, especially in the cooling and hardening process of the plastic package material after the injection is finished, the adsorbed metal film can be directly adhered to the surface of the plastic package body formed by the plastic package material to integrally form the chip package body with the metal film on the surface. Meanwhile, the chip packaging body formed based on the die and the method has better electromagnetic shielding effect, does not decrease along with the lapse of time, does not occupy extra area, and can be suitable for the condition of high-density use of chip packaging.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (16)
1. A die for chip packaging, comprising:
the first die and the second die are respectively provided with an opening and are combined oppositely to form at least one cavity, and the cavity is used for accommodating a lead frame and a chip connected with the lead frame; and
a plurality of material injection channels which penetrate through the first mould and the second mould, are communicated with the cavity and are used for injecting plastic package materials to form a plastic package body,
the first mold further comprises an adsorption channel, each cavity corresponds to at least one adsorption channel, the adsorption channels penetrate through the first mold and reach the inner surface of the opening of the first mold, the adsorption channels are used for applying negative pressure before plastic package materials are injected, so that the metal film is adsorbed on the inner surface of the opening of the first mold, and the metal film is adhered to the surface of the plastic package materials after the plastic package materials are injected.
2. The die for chip packaging according to claim 1, wherein the adsorption channel adheres the adsorbed metal film to the surface of the plastic package during the cooling and hardening process after the injection of the plastic package material is completed; or the adsorption channel adopts an adhesive to adhere the adsorbed metal film to the surface of the plastic package after the plastic package material is completely hardened.
3. The die for chip packaging according to claim 1, wherein the suction channel is funnel-shaped, and a dimension of the suction channel near an end of the cavity is larger than a dimension of the suction channel far from the end of the cavity.
4. The die of claim 3, wherein when only one suction channel is disposed in each cavity, the suction channel is disposed in a geometrically central region of the upper surface of the corresponding cavity.
5. The die for chip packaging according to claim 1, wherein the metal film is attached to an inner surface of the opening of the first die in a sucked state.
6. The die of claim 1, wherein the negative pressure is provided by a negative pressure device in communication with the suction channel.
7. The die for chip packaging according to claim 6, wherein when a plurality of suction channels are correspondingly disposed in one cavity, the suction channels communicate with each other, and the negative pressure is provided by the same negative pressure device.
8. A chip package formed via the package mold package according to any one of claims 1 to 7, wherein the chip package comprises:
a lead frame;
the chip is arranged on the lead frame and is electrically connected with the lead frame;
the plastic package body wraps the chip;
and the metal film is adhered to the surface of the plastic package.
9. The chip package of claim 8, wherein the metal film is adhered to an upper surface and a portion of a side surface of the plastic package.
10. The chip package of claim 9, wherein a distance between the metal film adhered to the side of the plastic package and a pin of the chip package is greater than a preset threshold.
11. The chip package of any one of claims 10, wherein the metal film portions are equal in thickness.
12. The chip package of claim 11, wherein the metal film has a thickness of 0.1-0.9 mm.
13. The chip package of claim 8, wherein the metal film is formed of a material including any one of aluminum and copper.
14. The chip package of claim 8, wherein the lead frame comprises a chip pad and a pin, the chip being secured to the chip pad and electrically connected to the pin.
15. A chip packaging method comprises the following steps:
providing a lead frame;
arranging a chip on the lead frame and electrically connecting the chip with the lead frame;
placing a lead frame provided with a chip into a cavity of a chip packaging mold according to any one of claims 1 to 7, and injecting a molding compound into the chip packaging mold to form a molding compound covering the chip and the lead frame;
and after the injection of the plastic package material is finished, adhering the metal film adsorbed by the chip package mold to the surface of the plastic package body to integrally form a chip package body.
16. The chip packaging method according to claim 15, wherein the metal film adsorbed by the chip packaging mold is adhered to the surface of the plastic encapsulant in a cooling and hardening process after the injection of the plastic encapsulant is completed; or adhering the adsorbed metal film to the surface of the plastic package by using an adhesive after the injection of the plastic package material is completed and the plastic package material is completely hardened.
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