CN113659436A - Filtering polaroid and vertical cavity surface emitting laser - Google Patents

Filtering polaroid and vertical cavity surface emitting laser Download PDF

Info

Publication number
CN113659436A
CN113659436A CN202110924891.XA CN202110924891A CN113659436A CN 113659436 A CN113659436 A CN 113659436A CN 202110924891 A CN202110924891 A CN 202110924891A CN 113659436 A CN113659436 A CN 113659436A
Authority
CN
China
Prior art keywords
filtering
distributed bragg
polarizer
contrast grating
bragg reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110924891.XA
Other languages
Chinese (zh)
Other versions
CN113659436B (en
Inventor
常瑞华
沈志强
秦昊烨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Bosheng Photoelectric Technology Co ltd
Original Assignee
Shenzhen Bosheng Photoelectric Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Bosheng Photoelectric Technology Co ltd filed Critical Shenzhen Bosheng Photoelectric Technology Co ltd
Priority to CN202110924891.XA priority Critical patent/CN113659436B/en
Publication of CN113659436A publication Critical patent/CN113659436A/en
Application granted granted Critical
Publication of CN113659436B publication Critical patent/CN113659436B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Polarising Elements (AREA)

Abstract

The utility model provides a filtering polaroid and vertical cavity surface emitting laser, this filtering polaroid includes from last high contrast grating, filtering chamber and the distributed Bragg reflector who stacks gradually the setting down. According to the high-contrast grating integrated polarization filter, the high-contrast grating is integrated on the basis of the filter cavity and the distributed Bragg reflector, so that the polarization selectivity of the high-contrast grating and the reflection effect of the distributed Bragg reflector can be simultaneously utilized, narrow-band filtering of incident light in a specific wavelength range is realized, and linearly polarized light is generated.

Description

Filtering polaroid and vertical cavity surface emitting laser
Technical Field
The present disclosure relates generally to the field of optical device technology, and more particularly to a filtering polarizer and a vertical cavity surface emitting laser.
Background
The narrow-band filter with polarization selectivity plays an important role in the applications of Vertical Cavity Surface Emitting Lasers (VCSELs), polarization imaging, generation and filtering of narrow-band polarized light and the like.
However, conventional optical filters and polarizers are bulky, which is disadvantageous for on-chip integration and miniaturization, and have limitations.
Disclosure of Invention
In view of the above-mentioned drawbacks and deficiencies of the related art, it is desirable to provide a filtering polarizer and a vertical cavity surface emitting laser capable of having filtering and polarizing functions while facilitating integration.
In a first aspect, the present disclosure provides a filtering polarizer comprising a high-contrast grating, a filtering cavity, and a distributed bragg reflector stacked in sequence from top to bottom.
Optionally, in some embodiments of the present disclosure, the filter cavity includes a distributed bragg mirror based filter cavity top mirror, a band pass filter cavity, and a distributed bragg mirror based filter cavity bottom mirror.
Optionally, in some embodiments of the present disclosure, the thickness of the band-pass filter cavity is
Figure BDA0003208809530000011
Wherein λ1Representing a first target wavelength.
Optionally, in some embodiments of the present disclosure, the distributed bragg reflector includes a first dielectric layer and a second dielectric layer alternately disposed, and a refractive index of the first dielectric layer is different from a refractive index of the second dielectric layer.
Optionally, in some embodiments of the present disclosure, a material of the first dielectric layer and a material of the second dielectric layer are at least one of silicon dioxide, aluminum oxide, titanium oxide, and silicon nitride.
Optionally, in some embodiments of the present disclosure, the thickness of the first dielectric layer and the thickness of the second dielectric layer are both the same
Figure BDA0003208809530000021
Wherein λ2Representing a second target wavelength.
Optionally, in some embodiments of the present disclosure, the material of the high contrast grating includes any one of silicon nitride, silicon, and titanium dioxide.
Optionally, in some embodiments of the present disclosure, the high contrast grating has a thickness of 150nm to 900 nm.
Optionally, in some embodiments of the present disclosure, the filter polarizer further includes a substrate disposed at a bottom of the distributed bragg reflector.
In a second aspect, the present disclosure provides a vertical cavity surface emitting laser comprising the filtering polarizer of any one of the first aspects.
According to the technical scheme, the embodiment of the disclosure has the following advantages:
the embodiment of the disclosure provides a filtering polarizer and a vertical cavity surface emitting laser, wherein a high-contrast grating is integrated on the basis of a filtering cavity and a distributed Bragg reflector, so that the narrow-band filtering and linearly polarized light generation of incident light in a specific wavelength range can be realized by utilizing the polarization selectivity of the high-contrast grating and the reflection action of the distributed Bragg reflector.
Drawings
Other features, objects and advantages of the disclosure will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a filtering polarizer provided in an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a transmittance spectrum of a high contrast grating provided by an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a distributed bragg reflector according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating a transmittance spectrum of a filtering polarizer provided by an embodiment of the present disclosure;
fig. 5 is an enlarged schematic view of fig. 4 at around 940 nm.
Reference numerals:
100-filter polarizer, 101-high contrast grating, 102-filter cavity, 1021-filter cavity top mirror, 1022-band-pass filter cavity, 1023-filter cavity bottom mirror, 103-distributed bragg mirror, 1031-first dielectric layer, 1032-second dielectric layer, 104-substrate.
Detailed Description
In order to make the technical solutions of the present disclosure better understood by those skilled in the art, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only a part of the embodiments of the present disclosure, not all of the embodiments. All other embodiments, which can be derived by one of ordinary skill in the art from the embodiments disclosed herein without making any creative effort, shall fall within the scope of protection of the present disclosure.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present disclosure and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the disclosure described are capable of operation in sequences other than those illustrated or otherwise described herein.
Moreover, the terms "comprises," "comprising," and any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not expressly listed or inherent to such process, method, article, or apparatus.
For ease of understanding and explanation, the filtering polarizer and the vcsel provided in the embodiment of the present disclosure are explained in detail below with reference to fig. 1 to 5.
Please refer to fig. 1, which is a schematic structural diagram of a filtering polarizer according to an embodiment of the present disclosure. The filter polarizer 100 includes a High Contrast Grating (HCG) 101, a filter cavity 102, and a Distributed Bragg Reflector (DBR) 103, which are sequentially stacked from top to bottom.
It should be noted that the high contrast grating 101 is a single layer near wavelength grating physical structure in which the refractive index of the grating material is very different from the refractive index of the surrounding environment. The high-contrast grating 101 may generate linearly polarized light by acting on TE polarized light and TM polarized light to a different degree and by varying the transmittance thereof. The dbr 103 is a structure formed by alternately forming a plurality of layers of different refractive index materials, wherein each layer boundary causes partial reflection of light waves. The dbr 103 may act as an optical filter and reflect a wavelength range called a photonic stop band, i.e., a wavelength range in which light is prohibited from propagating through the structure. By integrating the high-contrast grating 101 on the basis of the filter cavity 102 and the distributed bragg reflector 103, the obtained filter polarizer 100 can have the functions of narrow-band filtering and linearly polarized light generation at the same time.
The following embodiments of the present disclosure are illustrated with one high contrast grating 101, one filter cavity 102, and three distributed bragg reflectors 103, with an operating wavelength of 940nm as an example. Of course, the number of each structure and the operating wavelength may also be other values, which is not limited in the embodiment of the present disclosure.
Optionally, the material of the high contrast grating 101 in the embodiments of the present disclosure may include, but is not limited to, any one of silicon nitride, silicon, and titanium dioxide. The thickness of the high-contrast grating 101 can be 150 nm-900 nm, the duty ratio can be 0.2-0.8, and the period can be 0.9-1.5 times of the working wavelength. As shown in fig. 2, which is a schematic diagram of a transmittance spectrum of a high-contrast grating provided in the embodiment of the present disclosure, it can be seen from fig. 2 that the transmittance of the high-contrast grating 101 for TE and TM polarization directions is different, and the high-contrast grating has the function of a linear polarizer, and the extinction ratio at 940nm is very large.
Optionally, in the embodiment of the present disclosure, the filter cavity 102 may include a filter cavity top mirror 1021 based on a distributed bragg reflector, a band-pass filter cavity 1022, and a filter cavity bottom mirror 1023 based on a distributed bragg reflector, where the filter cavity top mirror 1021, the band-pass filter cavity 1022, and the filter cavity bottom mirror 1023 together form a structureA fabry-perot resonator structure is provided for spectrally producing a narrow band peak around 940 nm. Wherein the thickness of the band-pass filtering cavity 1022 is
Figure BDA0003208809530000041
λ1Representing a first target wavelength, such as 940 nm.
Optionally, as shown in fig. 3, the distributed bragg reflector 103 in the embodiment of the present disclosure may include first dielectric layers 1031 and second dielectric layers 1032 which are alternately disposed, and a refractive index of the first dielectric layers 1031 is different from a refractive index of the second dielectric layers 1032. For example, the top filter 1021 and bottom filter 1023 mirrors have three pairs of high-index-low-index media layers and the DBR mirror 103 has ten pairs of high-index-low-index media layers. The material of the first dielectric layer 1031 and the material of the second dielectric layer 1032 may be at least one of silicon dioxide, aluminum oxide, titanium oxide, and silicon nitride. The thickness of the first dielectric layer 1031 and the thickness of the second dielectric layer 1032 are both
Figure BDA0003208809530000042
λ2Indicating a second target wavelength, such as 555nm, 340nm, and 200nm for the distributed bragg mirror 103 from top to bottom, respectively, as shown in fig. 4, can be used to block transmitted light in the range of 200nm to 900nm, resulting in an efficient passband only in a narrow band around 940 nm. Further, as shown in fig. 5, which is an enlarged schematic view of fig. 4 around 940nm, it can be seen that TM polarized light has a high transmittance, while TE polarized light is almost completely reflected, i.e., transmittance is close to 0.
Optionally, the filtering polarizer 100 in the embodiment of the present disclosure may further include a substrate 104 disposed at the bottom of the distributed bragg reflector 103. For example, the substrate 104 may be silicon dioxide.
Based on the foregoing embodiments, embodiments of the present disclosure provide a vertical cavity surface emitting laser that may include the filter polarizer 100 of the corresponding embodiment of fig. 1-5.
The embodiment of the disclosure provides a filtering polaroid and a vertical cavity surface emitting laser, wherein the filtering polaroid comprises a high-contrast grating, a filtering cavity and a distributed Bragg reflector which are sequentially stacked from top to bottom. According to the embodiment of the disclosure, the high-contrast grating is integrated on the basis of the filter cavity and the distributed Bragg reflector, so that the narrow-band filtering of incident light in a specific wavelength range and the generation of linearly polarized light can be realized by simultaneously utilizing the polarization selectivity of the high-contrast grating and the reflection action of the distributed Bragg reflector.
The above examples are only intended to illustrate the technical solutions of the present disclosure, not to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present disclosure.

Claims (10)

1. The filtering polaroid is characterized by comprising a high-contrast grating, a filtering cavity and a distributed Bragg reflector which are sequentially stacked from top to bottom.
2. The filtering polarizer of claim 1, wherein the filter cavities comprise a distributed bragg mirror based filter cavity top mirror, a band pass filter cavity, and a distributed bragg mirror based filter cavity bottom mirror.
3. The filtering polarizer of claim 2, wherein the bandpass filter cavity has a thickness of
Figure FDA0003208809520000011
Wherein λ1Representing a first target wavelength.
4. The filtering polarizer of any one of claims 1 to 3, wherein the DBR mirror comprises first dielectric layers and second dielectric layers alternately disposed, the first dielectric layers having a refractive index different from a refractive index of the second dielectric layers.
5. The filtering polarizer of claim 4, wherein the material of the first dielectric layer and the material of the second dielectric layer is at least one of silicon dioxide, aluminum oxide, titanium oxide, and silicon nitride.
6. The filtering polarizer of claim 5, wherein the thickness of the first dielectric layer and the thickness of the second dielectric layer are both thicknesses
Figure FDA0003208809520000012
Wherein λ2Representing a second target wavelength.
7. The filtering polarizer of claim 1, wherein the material of the high contrast grating comprises any one of silicon nitride, silicon, and titanium dioxide.
8. The filtering polarizer of claim 1 or 7, wherein the high contrast grating has a thickness of 150nm to 900 nm.
9. The filtering polarizer of claim 1, further comprising a substrate disposed at a bottom of the distributed bragg reflector.
10. A vertical cavity surface emitting laser comprising the filtering polarizer of any one of claims 1 to 9.
CN202110924891.XA 2021-08-12 2021-08-12 Filtering polaroid and vertical cavity surface emitting laser Active CN113659436B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110924891.XA CN113659436B (en) 2021-08-12 2021-08-12 Filtering polaroid and vertical cavity surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110924891.XA CN113659436B (en) 2021-08-12 2021-08-12 Filtering polaroid and vertical cavity surface emitting laser

Publications (2)

Publication Number Publication Date
CN113659436A true CN113659436A (en) 2021-11-16
CN113659436B CN113659436B (en) 2023-06-20

Family

ID=78479538

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110924891.XA Active CN113659436B (en) 2021-08-12 2021-08-12 Filtering polaroid and vertical cavity surface emitting laser

Country Status (1)

Country Link
CN (1) CN113659436B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785320B1 (en) * 1999-07-10 2004-08-31 Qinetiq Limited Control of polarisation of vertical cavity surface emitting lasers
CN105977786A (en) * 2016-06-29 2016-09-28 北京工业大学 Low refractive index medium support-type high-contrast grating surface emitting laser
CN106654858A (en) * 2017-03-08 2017-05-10 长春理工大学 Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror
CN107768979A (en) * 2017-10-17 2018-03-06 北京工业大学 Extension integrates high-contrast grating external cavity emitting laser
GB2582378A (en) * 2019-03-22 2020-09-23 Camlin Tech Limited Vertical external cavity surface emitting laser with improved external mirror structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785320B1 (en) * 1999-07-10 2004-08-31 Qinetiq Limited Control of polarisation of vertical cavity surface emitting lasers
CN105977786A (en) * 2016-06-29 2016-09-28 北京工业大学 Low refractive index medium support-type high-contrast grating surface emitting laser
CN106654858A (en) * 2017-03-08 2017-05-10 长春理工大学 Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror
CN107768979A (en) * 2017-10-17 2018-03-06 北京工业大学 Extension integrates high-contrast grating external cavity emitting laser
GB2582378A (en) * 2019-03-22 2020-09-23 Camlin Tech Limited Vertical external cavity surface emitting laser with improved external mirror structure

Also Published As

Publication number Publication date
CN113659436B (en) 2023-06-20

Similar Documents

Publication Publication Date Title
US6661952B2 (en) Sub-wavelength efficient polarization filter (SWEP filter)
JP4763099B2 (en) Broadband wire grid polarizer for the visible spectrum
US7386205B2 (en) Optical device and method for making same
US6661830B1 (en) Tunable optically-pumped semiconductor laser including a polarizing resonator mirror
US7227684B2 (en) Method and system for providing beam polarization
US20040047039A1 (en) Wide angle optical device and method for making same
US10802184B2 (en) Reflective diffraction gratings employing efficiency enhancement or etch barrier layers
JP2004280050A5 (en)
JP2000047027A (en) Production of optical filter
JP4369256B2 (en) Spectroscopic optical element
CN106233176B (en) The manufacturing method of the mounting structure of optical grating element
CN113659436B (en) Filtering polaroid and vertical cavity surface emitting laser
EP1672395B1 (en) Polarizing element and optical system including polarizing element
US10795174B1 (en) Flat-top narrow bandpass filters based on cascaded resonant gratings
KR102522956B1 (en) Polymeric waveguide Bragg reflecting tunable wavelength filters
JP4749789B2 (en) Transmission type diffractive optical element
Hsu et al. Flattened broadband notch filters using guided-mode resonance associated with asymmetric binary gratings
Magnusson et al. Cascaded resonant-grating filters: experimental results on lowered sidebands and narrowed lines
US20020093995A1 (en) Electro-optically tunable external cavity mirror for a narrow linewidth semiconductor laser
USH1572H (en) Wavelength stabilizing laser mirror
Ura et al. Guided-mode resonances in two-story waveguides
Gupta et al. Metamaterial Tunable Notch Filters Operating in Longwave Infrared
CN117687137A (en) Photonic crystal filter and preparation method thereof
Calvez et al. Nonlinear conversion in Cavity-Resonator Integrated Grating Filters
CN116184545A (en) Polarization independent high efficiency broadband metal dielectric double layer grating for 1053nm band

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20230506

Address after: No. 99, Zhenyuan Road, Weitang street, Jiashan County, Jiaxing City, Zhejiang Province

Applicant after: Zhejiang Bosheng Photoelectric Technology Co.,Ltd.

Address before: Room 2604, building 3, Chongwen Park, Nanshan Zhiyuan, No. 3370, Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000

Applicant before: Shenzhen Bosheng Photoelectric Technology Co.,Ltd.

GR01 Patent grant
GR01 Patent grant