CN106654858A - Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror - Google Patents
Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror Download PDFInfo
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- CN106654858A CN106654858A CN201710133270.3A CN201710133270A CN106654858A CN 106654858 A CN106654858 A CN 106654858A CN 201710133270 A CN201710133270 A CN 201710133270A CN 106654858 A CN106654858 A CN 106654858A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
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Abstract
The invention belongs to the technical field of semiconductor lasers, discloses a vertical cavity surface emitting laser with a dual-layer sub-wavelength grating reflecting mirror and aims to solve problems of excessive film layer structures and high threshold current of existing VCSEL (vertical cavity surface emitting laser) devices. The vertical cavity surface emitting laser is characterized in that a high-refraction-index conductive substrate is positioned above an oxide confinement layer. A manufacturing process includes steps: sequentially growing a low-refraction-index sublayer, a high-refraction-index sub-wavelength grating layer and a low-refraction-index grating layer on the high-refraction-index conductive substrate; adopting an etching technique to make a portion between the high-refraction-index sub-wavelength grating layer and the low-refraction-index grating layer into a dual-layer sub-wavelength grating; adopting the etching technique for removing peripheral portions of the low-refraction-index sublayer, the high-refraction-index sub-wavelength grating layer and the low-refraction-index grating layer, and making a p-face electrode on the upper portion of the peripheral portion of the high-refraction-index conductive substrate. The vertical cavity surface emitting laser has advantages of low threshold current, high operation stability and the like and is capable of directly outputting polarized light to serve as a photo-communication light source.
Description
Technical field
The present invention relates to a kind of vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum, described
The features such as double-deck sub-wave length grating speculum has high reflectance, wide bandwidth, strong polarizability simultaneously, the vertical-cavity surface-emitting half
Conductor laser has the features such as threshold current is low, job stability is strong simultaneously, polarised light can be directly exported, as optic communication
Light source, belongs to semiconductor laser field.
Background technology
VCSEL (vertical-cavity-face emitting semiconductor laser) is with threshold current is low, export circular light spot, be easy to monolithic collection
Into, job stability is strong the features such as.The resonator of VCSEL is made up of lower speculum, active gain area, upper reflector, lower reflection
Mirror, upper reflector are referred to as Cavity surface speculum.Existing Cavity surface speculum mainly has two kinds.One is DBR (Distributed Bragg Reflections
Mirror), it is structurally characterized in that multiple film layer, i.e., described DBR is quarter-wave high and low refraction by more than 20 pairs optical thicknesses
Rate semi-conducting material alternating growth layer is constituted, and realizes that light feeds back using refractive index cycle change, obtains high reflectance, the width of DBR
Bandwidth product.Two is DBR-HCG speculums, and HCG (high-contrast sub-wave length grating) therein is partly by one layer of low-refraction Asia
Layer and a floor height refractive index sub-wave length grating are constituted, and HCG parts are using the folding between sublayer material and sub-wave length grating material
While the diffraction of rate difference and sub-wave length grating is penetrated to realize that light feeds back, significant polarizability is obtained；DBR therein part by
It is several quarter-wave high and low refractive index semi-conducting material alternating growth layer is to optical thickness to constitute, simple structure, but
Be enough to make up the deficiency of high index of refraction sub-wave length grating reflectivity and bandwidth；DBR-HCG speculums are used as into the upper of VCSEL devices
During speculum, polarised light can be directly exported；
A kind of existing its structure of VCSEL devices related to the present invention as shown in figure 1, its lower speculum is DBR, upper reflection
Mirror is DBR-HCG speculums.Further it includes from bottom to top consisting of part, the reflection of n faces electrode 1, substrate 2, n-DBR
Mirror 3, active gain area 4, oxide confining layer 5, p-DBR speculums 6, high index of refraction conductive substrates 7；In the upper surface of device certainly
Outward p faces electrode 8, low-refraction subgrade 9 is followed successively by inwards；The surface distributed high index of refraction sub-wave length grating 10 of low-refraction subgrade 9,
As shown in Figure 1 and Figure 2.The n-DBR speculums 3 are quarter-wave high and low refractive index and partly lead by 20 pairs of optical thicknesses
Body material alternating growth layer is constituted；The oxide confining layer 5 be high alumina aluminum gallium arsenide conductive layer circumferential annular region be oxidized and
The Al of formation2O3Layer；The p-DBR speculums 6 are quarter-wave high and low refractive index semiconductor by 4 pairs of optical thicknesses
Material alternating growth layer is constituted；The material of high index of refraction conductive substrates 7 is GaAs or GaSb；The low-refraction subgrade 9
Material is SiO2；The material of high index of refraction sub-wave length grating 10 is Si.By p-DBR speculums 6, high index of refraction conductive substrates 7,
Low-refraction subgrade 9 and high index of refraction sub-wave length grating 10 constitute a DBR-HCG speculum, used as the upper of the VCSEL devices
Speculum.However, the VCSEL devices have its technical problem, by 4 pairs of optical thicknesses quarter-wave high and low folding is
The p-DBR speculums 6 for penetrating rate semi-conducting material alternating growth layer composition still cause excessive, the accurate film of the film layer structure of device
Layer is sensitive to Thickness Variation so that the growth difficulty of film layer is still larger, meanwhile, device gross thickness is bigger than normal, causes threshold current
It is higher.HCG in the DBR-HCG speculums is difficult to realize to TE or TM mould reflectivity due to the design feature of its own
Wide bandwidth diffraction under the premise of more than 99.9%, in addition, it is also higher to making required precision, cause long term device working stability
Property is poor.DBR in the DBR-HCG speculums does not receive polarization beat length due to its diffraction characteristic, and polarization characteristic is weak, TE, TM mould
Reflection differences Δ R<10%.
The content of the invention
The technical problem that the present invention exists for existing VCSEL devices, determines goal of the invention and reflect on resonator to improve
The reflectivity of mirror, widens reflection broadband, strengthens resonance opticity, further reduces the threshold current of device, strengthens work steady
It is qualitative, manufacture difficulty is reduced, for this purpose, we have invented a kind of vertical-cavity surface-emitting with double-deck sub-wave length grating speculum half
Conductor laser.
The vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum of the present invention is wrapped from bottom to top
Include consisting of part, n faces electrode 1, substrate 2, n-DBR speculums 3, active gain area 4, oxide confining layer 5 and high refraction
Rate conductive substrates 7, are followed successively by inwards p faces electrode 8, low-refraction subgrade 9, as shown in figure 3, it is special in the upper surface of device from outward
Levy and be, high index of refraction conductive substrates 7 are located above oxide confining layer 5；One making step of device is：In high index of refraction
Grow low-refraction subgrade 9, high index of refraction sub-wave length grating layer 11 and low-refraction grating layer 12 in conductive substrates 7 successively, such as
Shown in Fig. 4；The mid portion of high index of refraction sub-wave length grating layer 11 and low-refraction grating layer 12 is made using lithographic technique
Into double-deck sub-wave length grating 13, as shown in Figure 5；Lithographic technique is adopted simultaneously by low-refraction subgrade 9, high index of refraction sub-wavelength light
The peripheral part of gate layer 11 and low-refraction grating layer 12 is removed, and in the peripheral part upper surface system of high index of refraction conductive substrates 7
Make p faces electrode 8, as shown in Figure 3.
Its technique effect of the invention is as described below.
In the present invention, low-refraction subgrade 9 constitutes a kind of HCG (high-contrast sub-wavelengths with double-deck sub-wave length grating 13
Grating), it is as the upper reflector of the vertical-cavity-face emitting semiconductor laser resonator of the present invention that is, described with double
Layer sub-wave length grating speculum.Due to the folding between the low-refraction grating layer 12 and high index of refraction sub-wave length grating layer 11 of introducing
Penetrate that rate is poor, for the high-contrast that HCG provides refractive index, on the premise of the reflectivity of speculum is more than 99.9%, bandwidth is obtained
To widening；The low-refraction grating layer 12 of introducing also obtains a subsidiary effect, that is, act as antioxidation coating, prevents high index of refraction
Sub-wave length grating layer 11Si films are aoxidized.Described low-refraction subgrade 9 also provides the high-contrast of refractive index for HCG, while
Serve as phase matching layer.There is described HCG high diffraction reflection to act on to incident harmonic light, defeated while chamber interior resonance is realized
Go out strong polarised light.
In the present invention, high index of refraction conductive substrates 7 are directly produced on oxide confining layer 5, existing compared to described
VCSEL devices, eliminate p-DBR parts.Without DBR in upper reflector, this causes the cost of manufacture of device and difficulty to reduce, system
Guarantee is readily obtained as quality, the long-term working stability of device is improved；Described means in device layer structure without DBR
In eliminate 4 pairs of optical thicknesses and be quarter-wave high and low refractive index semi-conducting material alternating growth layer, and increase
Low-refraction grating layer 12 not on electric current injection channel, therefore, the vertical-cavity-face emitting semiconductor laser of the present invention
Threshold current substantially reduced.
There was only three film layers with double-deck sub-wave length grating speculum in the present invention, film material is generally easy to get, can
Disposable etching completes the making of grating.
Description of the drawings
Fig. 1 is the VCSEL device architecture schematic diagrames that existing upper reflector is DBR-HCG speculums.Fig. 2 is existing upper reflection
Mirror is the VCSEL device optical grating construction enlarged diagrams of DBR-HCG speculums.Fig. 3 is the present invention with double-deck sub-wavelength light
The vertical-cavity-face emitting semiconductor laser structural representation of grid speculum, the figure is simultaneously as Figure of abstract.Fig. 4 is the present invention
In double-deck sub-wave length grating a making link schematic diagram.Fig. 5 is that the double-deck sub-wavelength grate structure in the present invention amplifies
Schematic diagram.Fig. 6 is the reflectivity changes curve map with double-deck sub-wave length grating speculum in the present invention, reflection kernel wavelength
For 2 μm, the curve 1 in figure is TM mould reflectance curves, and the curve 2 in figure is TE mould reflectance curves.Fig. 7 is in the present invention
Amplification change curve of the TM moulds reflectivity with double-deck sub-wave length grating speculum more than 99%.Fig. 8 is in the present invention
Amplification change curve of the TM moulds reflectivity with double-deck sub-wave length grating speculum more than 99.9%.Fig. 9 is that the present invention works as
Remove amplification change curve of the TM moulds reflectivity of resonator upper reflector after low-refraction grating layer more than 99.9%.
Specific embodiment
The vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum of the present invention is wrapped from bottom to top
Include consisting of part, n faces electrode 1, substrate 2, n-DBR speculums 3, active gain area 4, oxide confining layer 5 and high refraction
Rate conductive substrates 7, as shown in Figure 3.The n-DBR speculums 3 are quarter-wave high and low folding by 20 pairs of optical thicknesses
Penetrate rate semi-conducting material alternating growth layer composition.The oxide confining layer 5 is high alumina aluminum gallium arsenide conductive layer circumferential annular region
The Al for being oxidized and being formed2O3Layer.The material of high index of refraction conductive substrates 7 is GaAs or GaSb, such as GaSb, to 2 mum wavelengths
Refractive index be 3.90.P faces electrode 8, low-refraction subgrade 9 is followed successively by inwards from outward in the upper surface of device, as shown in Figure 3.
High index of refraction conductive substrates 7 are located above oxide confining layer 5.One making step of device is：In high index of refraction conductive base
Low-refraction subgrade 9, high index of refraction sub-wave length grating layer 11 and low-refraction grating layer 12 are grown on bottom 7 successively, such as Fig. 4 institutes
Show.The material of low-refraction subgrade 9 is SiO2, thickness is 0.32 μm, is 1.47 to the refractive index of 2 mum wavelengths；The high folding
It is Si to penetrate the material of rate sub-wave length grating layer 11, and thickness is 0.572 μm, is 3.48 to the refractive index of 2 mum wavelengths；The low-refraction
The material of grating layer 12 is SiO2, thickness is 0.13 μm, is 1.47 to the refractive index of 2 mum wavelengths.Reflected high using lithographic technique
The mid portion of rate sub-wave length grating layer 11 and low-refraction grating layer 12 is fabricated to double-deck sub-wave length grating 13, as shown in figure 5,
Dutycycle is 0.55, and the cycle is 0.86 μm.Lithographic technique is adopted simultaneously by low-refraction subgrade 9, high index of refraction sub-wave length grating
The peripheral part of layer 11 and low-refraction grating layer 12 is removed, and makes p in the peripheral part upper surface of high index of refraction conductive substrates 7
Face electrode 8, as shown in Figure 3.Low-refraction subgrade 9 constitutes a kind of HCG (high-contrast sub-wavelength light with double-deck sub-wave length grating 13
Grid), it is that one kind has double-deck sub-wave length grating reflection as the upper reflector of vertical-cavity-face emitting semiconductor laser resonator
Mirror.
Knowable to the reflectivity changes curve map with double-deck sub-wave length grating speculum in the present invention shown in Fig. 6,
There should be double-deck sub-wave length grating speculum to show very high reflectivity and wider width to TM moulds in the case of normal incidence
Band, while TE moulds reflectance peak is 77% at TM mould high reflectance bandwidth, it is seen that its polarizability to TM moulds is very strong.
The TM moulds reflectivity with double-deck sub-wave length grating speculum from the present invention shown in Fig. 7 putting more than 99%
Big change curve understands that bandwidth is covered from 1.87 μm to 2.17 μm, and high reflection bandwidth reaches 300nm.
The TM moulds reflectivity with double-deck sub-wave length grating speculum from the present invention shown in Fig. 8 is more than 99.9%
Amplify change curve to understand, reflectivity reaches so high, and its bandwidth still has about 200nm, i.e., from 1.906 μm to 2.101 μ
m。
It can be seen that, although VCSEL devices have reflectivity to be wider than 100nm and polarizability more than 99.5%, band to speculum
Rigors, the present invention met.
From the present invention shown in Fig. 9, the TM mould reflectivity of resonator upper reflector is more than after low-refraction grating layer is removed
99.9% amplification change curve understands, grating now equivalent to HCG of the prior art, due to again without DBR, at this moment
The bandwidth product of resonator upper reflector is very chaotic.It can be seen that save p-DBR part with set up low-refraction grating layer 12 this two
Individual technical measures are closely related, and the core technical features of the present invention are become jointly.
Claims (4)
1. a kind of vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum, from bottom to top including following
Part, n faces electrode (1), substrate (2), n-DBR speculums (3), active gain area (4), oxide confining layer (5) and height
Refractive index conductive substrates (7), p faces electrode (8), low-refraction subgrade (9) are followed successively by inwards in the upper surface of device from outward, and it is special
Levy and be, high index of refraction conductive substrates (7) positioned at oxide confining layer (5) above；One making step of device is：In high folding
Penetrate and grow low-refraction subgrade (9), high index of refraction sub-wave length grating layer (11) and low-refraction light in rate conductive substrates (7) successively
Gate layer (12)；Using lithographic technique by high index of refraction sub-wave length grating layer (11) and the mid portion of low-refraction grating layer (12)
It is fabricated to double-deck sub-wave length grating (13)；Lithographic technique is adopted simultaneously by low-refraction subgrade (9), high index of refraction sub-wave length grating
The peripheral part of layer (11) and low-refraction grating layer (12) is removed, and in high index of refraction conductive substrates (7) peripheral part upper table
Face makes p faces electrode (8).
2. the vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum according to claim 1,
Characterized in that, low-refraction subgrade (9) material is SiO2, thickness is 0.32 μm, is to the refractive index of 2 mum wavelengths
1.47；High index of refraction sub-wave length grating layer (11) material is Si, and thickness is 0.572 μm, is to the refractive index of 2 mum wavelengths
3.48；Low-refraction grating layer (12) material is SiO2, thickness is 0.13 μm, is 1.47 to the refractive index of 2 mum wavelengths.
3. the vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum according to claim 1,
Characterized in that, double-deck sub-wave length grating (13) dutycycle is 0.55, the cycle is 0.86 μm.
4. the vertical-cavity-face emitting semiconductor laser with double-deck sub-wave length grating speculum according to claim 1,
Characterized in that, low-refraction subgrade (9) constitutes a kind of HCG with double-deck sub-wave length grating (13), as vertical-cavity surface-emitting half
The upper reflector of conductor laser resonator.
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Cited By (9)
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| CN107065233A (en) * | 2017-03-21 | 2017-08-18 | 电子科技大学 | A kind of electric light tunable filter based on sub-wavelength high-contrast grating |
| CN107768979A (en) * | 2017-10-17 | 2018-03-06 | 北京工业大学 | Extension integrates high-contrast grating external cavity emitting laser |
| CN109038214A (en) * | 2018-07-26 | 2018-12-18 | 华中科技大学 | Vertical cavity surface emitting laser and preparation method thereof based on super surface |
| CN109407190A (en) * | 2017-08-16 | 2019-03-01 | 朗美通运营有限责任公司 | The thin film stack of diffraction optical element |
| CN110289552A (en) * | 2019-06-26 | 2019-09-27 | 北京工业大学 | High light beam quality planar laser with vertical cavity array and preparation method based on sub-wave length grating waveguide |
| CN110658576A (en) * | 2019-10-12 | 2020-01-07 | 长春理工大学 | Sub-wavelength grating and preparation method thereof |
| CN112753145A (en) * | 2018-09-19 | 2021-05-04 | 新墨西哥大学雨林创新 | Broadband active mirror architecture of high-power optically pumped semiconductor disc laser |
| CN113659436A (en) * | 2021-08-12 | 2021-11-16 | 深圳博升光电科技有限公司 | Filtering polaroid and vertical cavity surface emitting laser |
| US11686890B2 (en) | 2017-08-16 | 2023-06-27 | Lumentum Operations Llc | Multi-level diffractive optical element thin film coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065233A (en) * | 2017-03-21 | 2017-08-18 | 电子科技大学 | A kind of electric light tunable filter based on sub-wavelength high-contrast grating |
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| US11543562B2 (en) | 2017-08-16 | 2023-01-03 | Lumentum Operations Llc | Multi-layer thin film stack for diffractive optical elements |
| US11686890B2 (en) | 2017-08-16 | 2023-06-27 | Lumentum Operations Llc | Multi-level diffractive optical element thin film coating |
| CN107768979B (en) * | 2017-10-17 | 2019-07-12 | 北京工业大学 | Extension integrates high contrast grating external cavity emitting laser |
| CN107768979A (en) * | 2017-10-17 | 2018-03-06 | 北京工业大学 | Extension integrates high-contrast grating external cavity emitting laser |
| CN109038214A (en) * | 2018-07-26 | 2018-12-18 | 华中科技大学 | Vertical cavity surface emitting laser and preparation method thereof based on super surface |
| CN112753145A (en) * | 2018-09-19 | 2021-05-04 | 新墨西哥大学雨林创新 | Broadband active mirror architecture of high-power optically pumped semiconductor disc laser |
| CN110289552A (en) * | 2019-06-26 | 2019-09-27 | 北京工业大学 | High light beam quality planar laser with vertical cavity array and preparation method based on sub-wave length grating waveguide |
| CN110658576A (en) * | 2019-10-12 | 2020-01-07 | 长春理工大学 | Sub-wavelength grating and preparation method thereof |
| CN113659436A (en) * | 2021-08-12 | 2021-11-16 | 深圳博升光电科技有限公司 | Filtering polaroid and vertical cavity surface emitting laser |
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