CN112490118B - Semiconductor device, hard mask structure and manufacturing method of hard mask structure - Google Patents

Semiconductor device, hard mask structure and manufacturing method of hard mask structure Download PDF

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CN112490118B
CN112490118B CN201910866068.0A CN201910866068A CN112490118B CN 112490118 B CN112490118 B CN 112490118B CN 201910866068 A CN201910866068 A CN 201910866068A CN 112490118 B CN112490118 B CN 112490118B
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diamond
layer
film layer
carbon film
carbon
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CN112490118A (en
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陈广辉
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Changxin Memory Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask

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Abstract

The disclosure provides a semiconductor device, a hard mask structure and a manufacturing method of the hard mask structure, and relates to the technical field of semiconductors. The manufacturing method comprises the following steps: forming a first diamond-like carbon film layer on a substrate; forming a silicon layer on the surface of the first diamond-like carbon film layer far away from the substrate, wherein the silicon layer forms a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate, and the film forming areas are not communicated with each other; the silicon layer and the first diamond-like carbon film layer jointly form a target film layer; and implanting boron ions into the target film layer to form a mask layer. The manufacturing method of the hard mask structure can prevent grid distortion and improve the accuracy of pattern transfer.

Description

Semiconductor device, hard mask structure and manufacturing method of hard mask structure
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a semiconductor device, a hard mask structure and a manufacturing method of the hard mask structure.
Background
Hard masks (Hard masks) are mainly used in multiple photolithography processes, and specifically, multiple photoresist images can be first transferred onto the Hard masks, and then the final pattern is etched and transferred to a substrate through the Hard masks. The carbon film is widely applied to the semiconductor industry as a hard mask, but carbon-carbon bonds are formed between adjacent carbon atoms in the carbon film, so that the bond energy constraint is large, the internal stress is too high, the image is subjected to grid distortion, and phenomena such as line bending (line bending) and line width shifting (pitch walking) occur, so that the accuracy of pattern transfer is influenced.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The present disclosure is directed to overcoming the above-mentioned deficiencies in the prior art and to providing a semiconductor device, a hard mask structure and a method for fabricating the hard mask structure, which can prevent pattern distortion and improve the precision of pattern transfer.
According to an aspect of the present disclosure, there is provided a method of manufacturing a hard mask structure, including:
forming a first diamond-like carbon film layer on a substrate;
forming a silicon layer on the surface of the first diamond-like carbon film layer far away from the substrate, wherein the silicon layer forms a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate, and the film forming areas are not communicated with each other; the silicon layer and the first diamond-like carbon film layer jointly form a target film layer;
and injecting boron ions into the target film layer to form a mask layer.
In an exemplary embodiment of the present disclosure, the manufacturing method further includes:
and carrying out thermal annealing on the mask layer according to a preset temperature and a first preset time so as to enable the mask layer to generate a carbon-boron bond and a boron-silicon bond.
In an exemplary embodiment of the present disclosure, the forming of the first diamond-like carbon film layer on the substrate includes:
and depositing a first diamond-like carbon film layer on the substrate for a second preset time by using a first gas and a second gas through a chemical vapor deposition mode, wherein the density of the first gas is less than that of the second gas.
In an exemplary embodiment of the present disclosure, the manufacturing method further includes:
forming a second diamond-like carbon film layer on the surface formed by the first diamond-like carbon film layer and the silicon layer, wherein the silicon layer and the second diamond-like carbon film layer form a reference film layer;
forming a plurality of reference film layers, wherein the reference film layers are arranged in a laminated mode; the target film layer comprises the first diamond-like carbon film layer and each reference film layer.
In an exemplary embodiment of the present disclosure, the forming a silicon layer on a surface of the first diamond-like carbon film layer away from the substrate includes:
defining a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate;
a silicon layer is formed on each of the film-forming regions.
In an exemplary embodiment of the present disclosure, the first gas is benzene, methane or acetylene and the second gas is helium or argon.
In an exemplary embodiment of the present disclosure, the preset temperature is 200 to 900 ℃, and the first preset time is 30 to 180 min.
In an exemplary embodiment of the present disclosure, forming a silicon layer on a surface of the first diamond-like carbon film layer remote from the substrate comprises:
and depositing the first diamond-like carbon film layer on the surface far away from the substrate for 0.1-5 seconds by utilizing silane in a chemical vapor deposition mode to form a silicon layer.
In an exemplary embodiment of the present disclosure, the implanting boron ions into the target film layer to form a mask layer includes:
implanting boron ions into the target film layer by an ion implantation technique using a boron fluoride gas; the injection dose is 1011/cm2～1016/cm2The injection time is 5-200 seconds.
According to an aspect of the present disclosure, there is provided a hard mask structure, including:
a substrate;
the mask layer is arranged on the substrate and comprises a first diamond-like carbon film layer and a silicon layer formed on the surface, far away from the substrate, of the first diamond-like carbon film layer, the silicon layer forms a plurality of film forming areas on the surface, far away from the substrate, of the first diamond-like carbon film layer, and the film forming areas are not communicated with each other; the mask layer further includes boron ions.
In an exemplary embodiment of the present disclosure, the mask layer further includes:
the second diamond-like carbon film layer is formed on the surface formed by the first diamond-like carbon film layer and the silicon layer;
the silicon layer and the second diamond-like carbon film layer jointly form a plurality of reference film layers, and the reference film layers are arranged in a laminated mode.
In an exemplary embodiment of the present disclosure, the thicknesses of the first diamond-like carbon film layer and each of the second diamond-like carbon film layers are sequentially decreased from the bottom layer to the top layer.
In an exemplary embodiment of the present disclosure, the first diamond-like carbon film layer has a thickness ranging from 30nm to 40 nm.
According to an aspect of the present disclosure, there is provided a semiconductor device comprising the hardmask structure according to any one of the above.
According to the manufacturing method of the hard mask structure, the first diamond-like carbon film layer can be used as a main functional layer and can play a role of a hard mask; carbon atoms in the first diamond carbon film layer and silicon atoms in the silicon layer can form carbon-silicon bonds, and the bond energy of the carbon-silicon bonds is lower than that of carbon-carbon bonds in a conventional hard mask, so that energy can be released, and grid distortion can be relieved; meanwhile, boron ions can be injected into a target film layer formed by the silicon layer and the first diamond carbon film layer to replace carbon or silicon in a carbon-carbon bond and a carbon-silicon bond, so that the carbon-boron bond and the boron-silicon bond can be formed.
According to the semiconductor device and the hard mask structure, a carbon-boron bond, a carbon-silicon bond and a boron-silicon bond can be formed on the mask layer, on one hand, the bond energy of the carbon-silicon bond is lower than that of a carbon-carbon bond in a conventional hard mask, so that the energy can be released, and the grid distortion can be relieved; on the other hand, the coordination number of the boron element is lower than the coordination numbers of the carbon element and the silicon element, so that the binding degree between ions can be effectively reduced, the internal stress of the mask layer can be further reduced, the pattern distortion can be prevented, and the accuracy of pattern transfer can be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 is a flow chart of a method of fabricating a hardmask structure according to an embodiment of the disclosure.
Fig. 2 is a schematic diagram after step S110 of the manufacturing method of the present disclosure is completed.
Fig. 3 is a schematic diagram after step S120 of the manufacturing method of the present disclosure is completed.
Fig. 4 is a flowchart corresponding to step S120 in fig. 1.
Fig. 5 is a schematic diagram after step S130 of the manufacturing method of the present disclosure is completed.
In the figure: 1. a substrate; 2. a target film layer; 21. a first diamond-like carbon film layer; 22. a silicon layer; 3. and (5) masking the layer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," and "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc. The terms "first" and "second" are used merely as labels, and are not limiting on the number of their objects.
The embodiment of the present disclosure provides a method for manufacturing a hard mask structure, which may include, as shown in fig. 1:
step S110, forming a first diamond-like carbon film layer on a substrate;
step S120, forming a silicon layer on the surface of the first diamond-like carbon film layer far away from the substrate, wherein the silicon layer forms a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate, and the film forming areas are not communicated with each other; the silicon layer and the first diamond-like carbon film layer jointly form a target film layer;
step S130, implanting boron ions into the target film layer to form a mask layer.
According to the manufacturing method of the hard mask structure, the first diamond-like carbon film layer can be used as a main functional layer and can play a role of a hard mask; carbon atoms in the first diamond carbon film layer and silicon atoms in the silicon layer can form carbon-silicon bonds, and the bond energy of the carbon-silicon bonds is lower than that of carbon-carbon bonds in a conventional hard mask, so that energy can be released, and grid distortion can be relieved; meanwhile, boron ions can be injected into a target film layer formed by the silicon layer and the first diamond carbon film layer to replace carbon or silicon in a carbon-carbon bond and a carbon-silicon bond, so that the carbon-boron bond and the boron-silicon bond can be formed.
The following describes in detail the steps of the manufacturing method according to the embodiment of the present disclosure:
as shown in fig. 1, a first diamond-like carbon film layer is formed on a substrate in step S110.
As shown in fig. 2, the substrate 1 may be a flat plate structure, and its shape may be rectangular, circular, oval or irregular, or other shapes, which are not listed here. The material of the substrate 1 may be titanium nitride, silicon oxide, copper, or the like, and the material is not particularly limited.
The first diamond-like carbon film layer 21 may be formed on the substrate 1 by chemical vapor deposition or pulsed laser deposition, and the main material of the first diamond-like carbon film layer 21 may be carbonThe film can be used as a main functional film layer and can realize the function of a hard mask. Of course, the first diamond-like carbon film layer 21 may be formed by other methods, for example, the first diamond-like carbon film layer 21 may be formed on the substrate 1 by Plasma Enhanced Chemical Vapor Deposition (PECVD), and specifically, the gaseous carbon source may be decomposed by low-pressure plasma discharge to generate various carbon-containing neutral or ionic groups (e.g., CH3, CH2, CH +, C2, etc.) and atomic (or ionic) hydrogen (H, H)+) And carbon-containing groups can be bombarded on the substrate under the action of negative bias and adsorbed on the surface of the substrate 1, thereby forming sp2And sp3A hydrogenated diamond-like carbon film of carbon hybrid structure.
In one embodiment, the first diamond-like carbon film layer 21 may be deposited on the substrate 1 by chemical vapor deposition, and in the process, a gas flow sprayed toward the substrate 1 may be formed by using the first gas and the second gas to form a carbon film, which is the first diamond-like carbon film layer 21; the deposition time may be a predetermined second predetermined time, for example, the second predetermined time may be 5 seconds to 10 seconds, for example, it may be 5 seconds, 6 seconds, 7 seconds, 8 seconds, 9 seconds, or 10 seconds, of course, other predetermined times may be also used, which are not listed here; the thickness of the first diamond-like carbon film layer 21 can be controlled by controlling the flow rate of the gas and the deposition time, in an embodiment, the thickness of the first diamond-like carbon film layer 21 may range from 30nm to 40nm, for example, 30nm, 32nm, 34nm, 36nm, 38nm or 40nm, and of course, the first diamond-like carbon film layer 21 with other thicknesses may be deposited according to actual needs, which is not limited herein.
The first gas may have a density less than that of the second gas, for example, the first gas may be benzene, methane or acetylene, which may be used to provide the carbon source for the first diamond-like carbon film layer 21, and the second gas may be an inert gas, for example, argon, helium, or other inert gases, which are not listed here.
As shown in fig. 1, in step S120, forming a silicon layer on a surface of the first diamond-like carbon film layer away from the substrate, where the silicon layer forms a plurality of film formation regions on the surface of the first diamond-like carbon film layer away from the substrate, and the film formation regions are not connected to each other; the silicon layer and the first diamond-like carbon film layer jointly constitute a target film layer.
As shown in fig. 3, a silicon layer 22 may be formed on the surface of the first diamond-like carbon film layer 21 away from the substrate 1 by chemical vapor deposition, and in this process, silane may be used as a silicon source to form a gas flow toward the first diamond-like carbon film layer 21, so that the silicon layer 22 is formed on the surface of the first diamond-like carbon film layer 21, and the thickness of the silicon layer 22 may be controlled by controlling the deposition time of the silicon layer 22 and the flow rate of silane.
In one embodiment, the deposition time of the silicon layer 22 may be 0.1 seconds to 5 seconds, for example, it may be 0.1 seconds, 1 second, 2 seconds, 3 seconds, 4 seconds, or 5 seconds. Since the deposition time of the silicon layer 22 is short, the silicon layer 22 does not form a continuous and complete thin film, and a plurality of island-shaped silicon layers 22 are formed, and the region covered by each island-shaped silicon layer 22 can be used as each film forming region, and at this time, the film forming regions are not communicated with each other. Each film formation region may be randomly generated during the deposition of the silicon layer 22, and the shape and size of each film formation region may be the same or different, and is not particularly limited herein. Meanwhile, the deposited silicon layer 22 has a small thickness due to the short deposition time, the thickness is negligible relative to the thickness of the first diamond-like carbon film layer 21, and the hard mask function of the first diamond-like carbon film layer 21 is not affected. The silicon layer 22 and the first diamond-like carbon film layer 21 may together constitute the target film layer 2.
It should be noted that, because the silicon layer 22 is located on the surface of the first type of diamond carbon film layer 21, silicon ions in the silicon layer 22 can form carbon-silicon bonds with carbon ions in the first type of diamond carbon film layer 21, and a bond energy structure of only carbon-carbon bonds in a conventional hard mask is changed, so that carbon-carbon bonds, silicon-silicon bonds and carbon-silicon bonds exist in the target film layer 2 at the same time, and because the bond energy of the carbon-silicon bonds is less than that of the original carbon-carbon bonds, energy can be released, and grid distortion can be alleviated.
As shown in fig. 4, in an embodiment, step S120 may include:
step S1201, a plurality of film forming areas are defined on the surface of the first diamond-like carbon film layer far away from the substrate.
The surface of the first diamond-like carbon film layer 21 far away from the substrate 1 can be divided into a plurality of film forming areas, the film forming areas can be arranged side by side, the film forming areas can be not communicated with each other and can be uniformly distributed at equal intervals. The film forming region may have a rectangular, circular, oval, polygonal or irregular shape, but may have other shapes, which are not listed here. The shape of each film formation region may be the same as or different from that of the adjacent two regions, and is not particularly limited.
Step S1202, a silicon layer is formed on each of the film-forming regions.
The silicon layer 22 can be formed on each film-forming region by chemical vapor deposition, wherein the RF frequency can be 13.56Hz, the RF power can be 300W-5000W, the bias current can be 10 mA-100 mA, the bias voltage can be 550V-1500V, the temperature can be lower than 550 ℃, and the deposition process can be completed under low pressure, i.e. the pressure can be less than 10 Torr. Silane can be used as a silicon source in the deposition process, and silane can be used to form gas flow sprayed to each film forming area, so that silicon thin films are respectively formed in each film forming area, that is, the silicon layer 22 can include a plurality of silicon thin films, and the number of the silicon thin films can be the same as that of the film forming areas, and no special limitation is made on the number of the film forming areas and the number of the silicon thin films.
Each silicon film can be arranged corresponding to each film forming area one by one, and the shape of each formed silicon film can be the same as that of the film forming area corresponding to the silicon film, because each silicon film is formed in the same deposition process, the thickness of each silicon film can be the same, and because each film forming area is not communicated with each other, each silicon film can be the island-shaped silicon layer 22. Each silicon layer 22 may constitute the target film layer 2 together with the first diamond-like carbon layer 21.
As shown in fig. 4, in an embodiment of the present disclosure, after step S1202, the method may further include:
step S1203, forming a second diamond-like carbon film layer on the surface formed by the first diamond-like carbon film layer and the silicon layer, wherein the silicon layer and the second diamond-like carbon film layer form a reference film layer;
a second diamond-like carbon film layer may be formed by chemical vapor deposition on the surface of the first diamond-like carbon film layer and the silicon layer 22 together, that is: the second diamond-like carbon film layer covers the surfaces of the first diamond-like carbon film layer and the silicon layer 22 far away from the substrate, and the silicon layer 22 and the second diamond-like carbon film layer can jointly form a reference film layer. The thickness of the second diamond-like carbon film layer may be the same as or different from the thickness of the first diamond-like carbon film layer 21, for example, the thickness of the second diamond-like carbon film layer may be smaller than the thickness of the first diamond-like carbon film layer 21, and is not limited herein.
Forming gas flow sprayed to the surface formed by the first diamond-like carbon film layer 21 and the silicon layer 22 by using the first gas and the second gas to form a carbon film, wherein the carbon film is a second diamond-like carbon film layer; the thickness of the second diamond-like carbon film layer may be controlled according to the deposition time and the flow rates of the first gas and the second gas, which is not particularly limited herein.
The first gas may have a density less than that of the second gas, for example, the first gas may be benzene, methane or acetylene, which may be used to provide a carbon source for the second diamond-like carbon film layer, and the second gas may be an inert gas, for example, argon, helium, or other inert gases, which are not listed here.
Step S1204, forming a plurality of reference film layers, wherein the reference film layers are arranged in a laminated manner; the target film layer comprises the first diamond-like carbon film layer and each reference film layer.
A plurality of reference film layers can be formed in a chemical vapor deposition mode, each reference film layer can be arranged on the first diamond-like carbon film layer 21 in a laminated mode, in each reference film layer, the silicon layer 22 of the reference film layer positioned above can be in contact with the second diamond-like carbon film layer of the reference film layer positioned below, and therefore the contact area between the silicon film and the carbon film can be increased, the number of carbon-silicon bonds is increased, the number of carbon-carbon bonds is reduced, and grid distortion is further relieved. For example, the number of the reference film layers may be 2, 4, 6, 8 or 10, and certainly, other numbers may also be available, and the number of the reference film layers may be set according to actual needs, which is not particularly limited herein. In an embodiment, the target film layer 2 may include the first diamond-like carbon film layer 21 and a reference film layer, and the target film layer 2 may include one reference film layer or a plurality of reference film layers stacked together, which is not limited herein.
As shown in fig. 1, in step S130, boron ions are implanted into the target film layer to form a mask layer.
Ion implantation techniques may be employed to implant boron ions into the target film layer 2 to form the mask layer 3. As shown in fig. 5, the number of the silicon layers 22 in the mask layer 3 may be one, or may be multiple, for example, the number of the silicon layers 3 may be 2, 3, 4 or 5, or may be other numbers, which are not listed here. The mask layer 3 may include the silicon layer 22 formed on the surface thereof, the silicon layer 22 formed inside thereof, or only the silicon layer 22 formed inside thereof, and is not particularly limited.
The target film layer 2 may include a first diamond-like carbon film layer 21 and a plurality of reference film layers stacked on the first diamond-like carbon film layer 21, in an embodiment, boron ions may be implanted once per reference film layer formed on the first diamond-like carbon film layer 21, so that each reference film layer can be fully implanted with boron ions, and thus, uniform formation of carbon-boron bonds and boron-silicon bonds in the mask layer 3 is facilitated. In another embodiment, the first diamond-like carbon film layer 21 and the plurality of reference film layers stacked on the first diamond-like carbon film layer 21 may be used as a whole to perform one-time boron ion implantation, so as to break the carbon-carbon bond and the carbon-silicon bond and generate the carbon-boron bond and the boron-silicon bond, thereby reducing the ion implantation frequency and further reducing the damage to each film layer.
For example, boron fluoride gas may be used as a source of boron ions, and boron ions may be implanted into the target film 2 by ion implantation techniques. In this process, the implantation dose of boron ions may be 1011/cm2～1016/cm2It may be, for example, 1011/cm2、1012/cm2、1013/cm2、 1014/cm2、1015/cm2Or 1016/cm2Of course, other dosages are also possible, and are not specifically limited herein. The ion implantation time may be 5 seconds to 200 seconds, for example, 5 seconds, 50 seconds, 100 seconds, 150 seconds, or 200 seconds, but other implantation times are also possible, and are not listed here. The implantation dose and the implantation time of the boron ions may be selected according to the thickness of the target film layer 2, and are not particularly limited herein.
As shown in fig. 1, the manufacturing method of the embodiment of the present disclosure may further include:
step S140, performing thermal annealing on the mask layer according to a preset temperature and a first preset time, so that the mask layer generates a carbon-boron bond and a boron-silicon bond.
The thermal annealing process can be used for activating lattice damage possibly generated to the mask layer 3 in the ion injection process and repairing the damage, so that uniform and stable carbon-boron bonds and boron-silicon bonds are formed in the mask layer 3, and the coordination number of boron ions is lower than that of carbon ions or silicon ions, so that the binding degree among ions can be effectively reduced, the internal stress of the mask layer 3 can be reduced, the pattern distortion is prevented, and the accuracy of pattern transfer is improved.
In one embodiment, the mask layer 3 may be thermally annealed under vacuum condition or under nitrogen protection, and the annealing temperature and the annealing time may be a preset temperature or a first preset time, for example, the annealing temperature may be 200 ℃ to 900 ℃, for example, it may be 200 ℃, 300 ℃, 400 ℃, 500 ℃, 700 ℃ or 900 ℃; in one embodiment, in order to effectively reduce the internal stress of the mask layer 3 and avoid the deterioration of the crystal structure of the mask layer 3, the annealing temperature may be less than 300 ℃, which may be 200 ℃, 240 ℃, 260 ℃ or 300 ℃, and of course, other temperatures may be used, which are not listed here. The first preset time may be 30min to 180min, for example, 30min, 60min, 90min, 120min, 150min or 180 min.
The embodiments of the present disclosure also provide a hard mask structure, as shown in fig. 3 and 5, the hard mask structure may include a substrate 1 and a mask layer 3, where:
the substrate 1 may be a flat plate structure, and the shape thereof may be rectangular, circular, oval or irregular, and of course, other shapes may be also possible, which are not listed here. The material of the substrate 1 may be titanium nitride, silicon oxide, copper, or the like, and the material is not particularly limited.
The mask layer 3 may be disposed on the substrate 1, and may include a first diamond-like carbon film layer 21 and a silicon layer 22 formed on the surface of the first diamond-like carbon film layer 21 away from the substrate 1, where the silicon layer 22 forms a plurality of film forming regions on the surface of the first diamond-like carbon film layer 21 away from the substrate 1, and the film forming regions are not communicated with each other; and mask layer 3 may also include boron ions.
According to the hard mask structure disclosed by the embodiment of the disclosure, a carbon-boron bond, a carbon-silicon bond and a boron-silicon bond can be formed on the mask layer 3, on one hand, the bond energy of the carbon-silicon bond is lower than that of the carbon-carbon bond in the conventional hard mask, so that the energy can be released, and the grid distortion can be relieved; on the other hand, the coordination number of the boron element is lower than the coordination numbers of the carbon element and the silicon element, so that the binding degree between ions can be effectively reduced, the internal stress of the mask layer 3 can be further reduced, the pattern distortion can be prevented, and the accuracy of pattern transfer can be improved.
The main material of the first diamond-like carbon film layer 21 may be carbon, which may be used as a main functional film layer to realize a hard mask function. The thickness of the first diamond carbon film layer 21 may be in a range of 30nm to 40nm, for example, 30nm, 32nm, 34nm, 36nm, 38nm or 40nm, and of course, the first diamond carbon film layer 21 with other thicknesses may be deposited according to actual needs, which is not limited herein. The silicon layer 22 may be island-shaped and distributed in each film formation region.
The film forming areas can be distributed side by side and can be evenly distributed at equal intervals. The film forming region may have a rectangular, circular, oval, polygonal or irregular shape, but may have other shapes, which are not listed here. The shape of each film formation region may be the same or different between two adjacent regions, and is not particularly limited.
The mask layer 3 may further include a second diamond-like carbon film layer, which may be formed on the surface where the first diamond-like carbon film layer 21 and the silicon layer 22 together constitute, that is: the second diamond-like carbon film layer covers the surfaces of the first diamond-like carbon film layer 21 and the silicon layer 22 far away from the substrate 1, and the silicon layer 22 and the second diamond-like carbon film layer can jointly form a reference film layer. The number of the reference films may be multiple, and each of the reference films may be stacked on the side of the first diamond-like carbon film 21 away from the substrate 1.
It should be noted that the thickness of the second diamond-like carbon film layer may be different from the thickness of the first diamond-like carbon film layer 21, for example, the thickness of the first diamond-like carbon film layer 21 and the thickness of each second diamond-like carbon film layer may decrease from the bottom layer to the top layer. Of course, the thickness of the second diamond-like carbon film layer may also be the same as the thickness of the first diamond-like carbon film layer 21, and is not limited herein.
Further, the number of layers of the mask layer 3 may be one or plural, and when it is plural, each mask layer 3 may be provided in a stacked manner. For example, the number of mask layers 3 may be 2, 3, 4 or 5, and of course, other numbers may be used, which are not listed here.
The specific details and the manufacturing process of each part in the hard mask structure are described in detail in the corresponding manufacturing method of the hard mask structure, and therefore, the details are not described herein again.
The embodiment of the disclosure also provides a semiconductor device, which comprises the hard mask structure of any embodiment. The semiconductor device may be a Memory chip, such as a DRAM (Dynamic Random Access Memory), but of course, other semiconductor devices may be used, and are not listed here. The beneficial effects of the semiconductor device can be referred to the beneficial effects of the hard mask structure, and are not described in detail herein.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims (14)

1. A method of fabricating a hardmask structure, comprising:
forming a first diamond-like carbon film layer on a substrate;
forming a silicon layer on the surface of the first diamond-like carbon film layer far away from the substrate, wherein the silicon layer forms a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate, and the film forming areas are not communicated with each other; the silicon layer and the first diamond-like carbon film layer jointly form a target film layer;
and injecting boron ions into the target film layer to form a mask layer.
2. The manufacturing method according to claim 1, characterized by further comprising:
and carrying out thermal annealing on the mask layer according to a preset temperature and a first preset time so as to enable the mask layer to generate a carbon-boron bond and a boron-silicon bond.
3. The method of manufacturing according to claim 1, wherein the forming a first diamond-like carbon film layer on a substrate comprises:
and depositing a first diamond-like carbon film layer on the substrate for a second preset time by using a first gas and a second gas through a chemical vapor deposition mode, wherein the density of the first gas is less than that of the second gas.
4. The manufacturing method according to claim 1, characterized by further comprising:
forming a second diamond-like carbon film layer on the surface formed by the first diamond-like carbon film layer and the silicon layer, wherein the silicon layer and the second diamond-like carbon film layer form a reference film layer;
forming a plurality of reference film layers, wherein the reference film layers are arranged in a laminated mode; the target film layer comprises the first diamond-like carbon film layer and each reference film layer.
5. The method of manufacturing according to claim 1, wherein the forming a silicon layer on a surface of the first diamond-like carbon film layer remote from the substrate comprises:
defining a plurality of film forming areas on the surface of the first diamond-like carbon film layer far away from the substrate;
a silicon layer is formed on each of the film-forming regions.
6. The manufacturing method according to claim 3, wherein the first gas is benzene, methane, or acetylene, and the second gas is helium or argon.
7. The manufacturing method according to claim 2, wherein the predetermined temperature is 200 ℃ to 900 ℃ and the first predetermined time is 30min to 180 min.
8. A method of manufacturing according to claim 1, wherein forming a silicon layer on a surface of the first diamond-like carbon film layer remote from the substrate comprises:
and depositing the first diamond-like carbon film layer on the surface far away from the substrate for 0.1-5 seconds by utilizing silane in a chemical vapor deposition mode to form a silicon layer.
9. The method of manufacturing according to claim 1, wherein the implanting boron ions into the target film layer to form a mask layer comprises:
implanting boron ions into the target film layer by an ion implantation technique using a boron fluoride gas; the implantation dose is 1011/cm2~1016/cm2The injection time is 5 to 200 seconds.
10. A hardmask structure, comprising:
a substrate;
the mask layer is arranged on the substrate and comprises a first diamond-like carbon film layer and a silicon layer formed on the surface, far away from the substrate, of the first diamond-like carbon film layer, the silicon layer forms a plurality of film forming areas on the surface, far away from the substrate, of the first diamond-like carbon film layer, and the film forming areas are not communicated with each other; the silicon layer in the mask layer and the first diamond-like carbon film layer contain boron ions.
11. The hardmask structure according to claim 10, wherein the mask layer further comprises:
the second diamond-like carbon film layer is formed on the surface formed by the first diamond-like carbon film layer and the silicon layer;
the silicon layer and the second diamond-like carbon film layer jointly form a plurality of reference film layers, and the reference film layers are arranged in a laminated mode.
12. The hardmask structure according to claim 11, wherein the first diamond-like carbon film layer and each of the second diamond-like carbon film layers have thicknesses that decrease in order from a bottom layer to a top layer.
13. The hardmask structure according to claim 10, wherein the first diamond-like carbon film layer has a thickness in a range of 30nm to 40 nm.
14. A semiconductor device comprising a hardmask structure according to any one of claims 10to 13.
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CN104795326A (en) * 2014-01-16 2015-07-22 中芯国际集成电路制造(上海)有限公司 Method for manufacturing silicon nanowire structure

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