CN112101561B - Method and device for realizing quantum logic gate - Google Patents

Method and device for realizing quantum logic gate Download PDF

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CN112101561B
CN112101561B CN202010857741.7A CN202010857741A CN112101561B CN 112101561 B CN112101561 B CN 112101561B CN 202010857741 A CN202010857741 A CN 202010857741A CN 112101561 B CN112101561 B CN 112101561B
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段路明
吴宇恺
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Tsinghua University
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Abstract

The embodiment of the invention discloses a method, a device, a computer storage medium and an electronic device for realizing a quantum logic gate, wherein a multidimensional ion array collective correction mode meeting preset precision is obtained by solving; determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array; and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser. The quantum logic gate of the high-fidelity multi-dimensional ion array is realized, and technical support is provided for the application of ion quantum computation.

Description

Method and device for realizing quantum logic gate
Technical Field
This document relates to, but is not limited to, quantum computer technology, and more particularly, to a method, apparatus, computer storage medium, and electronic apparatus for implementing quantum logic gates.
Background
A quantum computer is a device that uses quantum logic for general purpose computing. The basic logic unit of the quantum computer is composed of quantum bits which obey the quantum mechanics principle, and a large number of quantum bits which interact with each other can physically realize the quantum computer. Compared with the traditional computer, the quantum computer can greatly reduce the operation time when solving some problems. Quantum computers have a wide application prospect in the aspects of future basic scientific research, quantum communication, cryptography, artificial intelligence, financial market simulation, climate change prediction and the like, and therefore have received wide attention. The quantum logic gate operation with high fidelity can be realized under experimental conditions by utilizing the ion qubit array trapped in the ion trap. The ion quantum bit has very excellent performance in the aspects of key indexes for measuring quantum computing performance, such as interaction control, long coherence time, high-fidelity quantum logic gate operation, quantum error correction and the like, and is one of platforms which can most possibly realize a quantum computer.
Currently, small-scale ionic quantum computers are mainly based on one-dimensional ionic chain structures. Due to experimental technical limitations, a one-dimensional ion chain structure is only suitable for the number of ion quantum bits below about 100. How to further improve the number of ion quantum bits and realize expandable and large-scale ion quantum computation is one of the core technical problems of realizing quantum computers; the method has important influence on the complexity of a quantum computer system, the speed and the fidelity of quantum logic gate operation, the flexibility of quantum algorithm design, the occupation of physical resources by the system and other problems.
To obtain more ion qubits in a limited ion trap confinement region, one possible approach is to use a two-dimensional or three-dimensional array of ions; besides the increase of the number of ion quantum bits, the two-dimensional or three-dimensional ion array can realize quantum error correction coding only by using a quantum logic gate between adjacent ions, so that the method is more suitable for large-scale quantum error correction. However, two-or three-dimensional arrays of ions trapped within a given spatial region by means of radio frequency electric fields typically exhibit high frequency oscillations, in which micro-motion of the ions occurs. Related technicians draw up approximate conditions and realize the design of a quantum logic gate based on a two-dimensional ion array; for a two-dimensional ion array and a three-dimensional ion array with large scale, the above approximate conditions are difficult to satisfy, the problem that the fidelity of a designed and realized quantum logic gate is greatly reduced can occur, and how to realize the quantum logic gate suitable for the two-dimensional ion array and the three-dimensional ion array with large scale becomes a problem to be solved.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a method and a device for realizing a quantum logic gate, a computer storage medium and an electronic device, and the quantum logic gate of a high-fidelity multi-dimensional ion array can be realized.
The embodiment of the invention provides a quantum logic gate, which comprises: a solving unit, a determining unit and an operating unit; wherein,
the solving unit is arranged as follows: solving the multidimensional ion array to obtain a collective normal mode meeting preset precision; the solving and obtaining of the collective normal mode meeting the preset precision comprises the following steps: determining a truncation order of the collective normal mode according to a preset precision; substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision;
the determination unit is configured to: determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and a collective normal mode of the multi-dimensional ion array obtained by solving;
the operation unit is configured to: and operating to realize a quantum logic gate between ion quantum bits through the determined relevant parameters of the laser.
In one illustrative example, the multi-dimensional ion array satisfies one of the following conditions:
the ratio of the vibration frequency of the equivalent simple harmonic potential of the constrained electric field in any main shaft direction and the constrained electric fields in other two main shaft directions is larger than a first preset value;
the ratio of the vibration frequencies of the equivalent simple harmonic potentials of the constrained electric fields in any two main shaft directions is smaller than a second preset value.
In an illustrative example, the relevant parameters include one or any combination of the following:
frequency, phase and amplitude modulation.
In an exemplary instance, the first predetermined value is greater than or equal to 10.
In an illustrative example, the second predetermined value is less than or equal to 10.
In one illustrative example, the confining electric field is used to form the multi-dimensional ion array.
On the other hand, an embodiment of the present invention further provides a method for implementing a quantum logic gate, including:
solving the multidimensional ion array to obtain a collective normal mode meeting preset precision;
determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array;
operating to realize a quantum logic gate between ion quantum bits through the determined relevant parameters of the laser;
the solving to obtain the collective normal mode meeting the preset precision comprises the following steps: determining a truncation order of the collective normal mode according to a preset precision; and substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve, so as to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision.
In one illustrative example, the confining electric field is used to form the multi-dimensional ion array.
In still another aspect, an embodiment of the present invention further provides a computer storage medium, where a computer program is stored, and when the computer program is executed by a processor, the computer program implements the method for implementing a quantum logic gate as described above.
In another aspect, an embodiment of the present invention further provides an electronic device, including: a memory and a processor, the memory having a computer program stored therein; wherein,
the processor is configured to execute the computer program in the memory;
the computer program, when executed by the processor, implements a method of implementing a quantum logic gate as described above.
In the embodiment of the invention, a multidimensional ion array collective normal mode meeting preset precision is obtained by solving; determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array; and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser. The quantum logic gate of the high-fidelity multi-dimensional ion array is realized, and technical support is provided for the application of ion quantum computation.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and are not intended to limit the invention.
FIG. 1 is a block diagram of an apparatus for implementing a quantum logic gate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a two-dimensional ion array according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a three-dimensional ion array according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a collective normal mode according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of target ion selection achieved by a laser according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a laser amplitude sequence according to an embodiment of the present invention;
fig. 7 is a flowchart of a method for implementing a quantum logic gate according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a block diagram of a device for implementing a quantum logic gate according to an embodiment of the present invention, as shown in fig. 1, including: the device comprises a solving unit, a determining unit and an operating unit; wherein,
the solving unit is set as follows: solving the multidimensional ion array to obtain a collective normal mode meeting preset precision;
in one illustrative example, the solving unit is arranged to:
determining a truncation order of the collective normal mode according to preset precision;
substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision;
wherein the confining electric field is used to form a multi-dimensional array of ions.
In one illustrative example, a truncation order of a collective normal mode including ion micromotion is determined, and assuming the truncation order to be M, only the order of ion micromotion of-M ≦ n ≦ M is considered in solving the collective normal mode, and the above expressions of ion equilibrium distribution and collective normal mode are substituted into a Newton's equation of motion given by the Coulomb interaction between the confining electric field and the ions; in order to make the newton equation of motion be established at any time, it is necessary that coefficients of different frequency components in the newton equation of motion are correspondingly equal, so that all collective normal modes including ion micromotion can be calculated. The embodiment of the invention presets the precision (for example, 10) -3 ) Then, the truncation order meeting the precision is determined by gradually increasing the order; after the truncation order is determined, the embodiment of the invention can solve the collective normal mode by referring to a mathematical calculation method in the correlation technique.
In one illustrative example, a multi-dimensional ion array in an embodiment of the invention comprises: ions further from the center have a micromotion ion array of a certain intensity.
In one illustrative example, the multidimensional ion array in embodiments of the invention satisfies the following condition: the ratio of the vibration frequency of the equivalent simple harmonic potential of the constrained electric field in any main shaft direction and the constrained electric fields in other two main shaft directions is larger than a first preset value; in an exemplary implementation, the first predetermined value is greater than or equal to 10. In an exemplary embodiment, the multidimensional ion array when the ratio of the vibration frequency of the equivalent simple harmonic potential of the constraint electric field of any one main axis direction and the constraint electric fields of the other two main axis directions is greater than a first preset value comprises: a two-dimensional array of ions; fig. 2 is a schematic diagram of a two-dimensional ion array according to an embodiment of the present invention, and as shown in fig. 2, when a constrained electric field in a z direction is much stronger than that in an x direction and a y direction, ions form two-dimensional distribution in the x direction and the y direction, and a two-dimensional ion array in an xy plane is obtained; ions further from the center in the two-dimensional ion array have a large micro-motion, i.e., the ions do not stay at a certain equilibrium position, but rather dither back and forth within each solid line of the illustration.
In one illustrative example, the multidimensional ion array in embodiments of the invention satisfies the following condition: the ratio of the vibration frequencies of the equivalent simple harmonic potentials of the constrained electric fields in any two main shaft directions is smaller than a second preset value. In an exemplary implementation, the second predetermined value is less than or equal to 10. In an exemplary embodiment, the multi-dimensional ion array when the ratio of the vibration frequencies of the equivalent simple harmonic potentials of the confining electric fields of any two principal axis directions is smaller than a second preset value comprises: a three-dimensional array of ions. Fig. 3 is a schematic diagram of a three-dimensional ion array according to an embodiment of the present invention, as shown in fig. 3, when the vibration frequencies of the equivalent simple harmonic potentials of the confinement electric fields in the x direction, the y direction, and the z direction are close to each other, the three-dimensional ion array is obtained; similarly, ions further from the center in the three-dimensional ion array have a large micromovement, i.e., the ions do not stay at a certain equilibrium position, but rather dither back and forth within each solid line of the illustration.
In an illustrative example, a method of an embodiment of the present invention further includes: the restraint electric field of the multi-dimensional ion array is formed by controlling direct current voltage and radio frequency voltage acting on the electrodes of the multi-dimensional ion array. The embodiment of the invention uses the confined electric field for confining ions; the electrode is applied with direct current voltage and radio frequency voltage to generate an electrostatic field and a radio frequency electric field, and the generated electrostatic field and the radio frequency electric field form the restraint electric field.
In one illustrative example, the collective normal mode expression for a multi-dimensional ion array in an embodiment of the invention, including ion micromotion, is:
Figure GDA0003834535150000061
wherein I represents an imaginary unit; k =1, 2, … n, n is the number of ions; omega k Representing the frequency of the collective normal mode;
Figure GDA0003834535150000062
the relative amplitude of the micro-motion of the nth order ion of the ith ion in the direction s of the main axis (also called space) in the kth collective normal mode is shown, and s represents the direction of the main axis; i =1, 2, … N, N =0, ± 1, ± 2, … represents the order of ion micromotion; omega rf The frequency of motion representing the micro-motion of the ions (also the frequency of the radio frequency electric field causing the micro-motion of the ions); t represents time. Here, the major axis direction may include three-dimensional x, y, and z axes. The embodiment of the invention has 3N independent collective normal modes of N ions.
Suppose that the three-dimensional ion array shown in FIG. 3 includes 100 ions 171 Yb + FIG. 4 is a schematic view of a collective normal mode of the embodiment of the present invention, as shown in FIG. 4, 100 171 Yb + The ions correspond to 300 frequencies of the collective normal mode, and the frequency of the collective normal mode is (omega) k And/2 pi), the unit is megahertz, each vertical line segment in the figure corresponds to a collective normal mode, and the density of the normal modes is larger at the denser places of the line segments.
In one illustrative example, the expression of the ion equilibrium distribution of the multi-dimensional ion array in the embodiments of the present invention, including ion micromotion, is:
Figure GDA0003834535150000071
wherein I represents an imaginary unit; omega rf Represents the frequency of the ion micromotion; t represents time; r when n =0 (zeroth order) i,s,n Meaning that each ion is at the respective principal axis when no micromovement is involvedR at equilibrium position of direction n =. + -. 1,. + -. 2, … i,s,n The relative amplitude of the ith ion in each principal axis direction in each order of micromotion is shown, s is used for showing the principal axis direction, i =1, 2, … N, N =0, ± 1, ± 2, … shows the order of micromotion of the ion.
The determination unit is configured to: determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array;
in an illustrative example, the relevant parameters include one or any combination of the following: frequency, phase and amplitude modulation.
Based on the solved collective normal mode containing ion micromotion and the ion balance distribution containing micromotion, the embodiment of the invention can determine the frequency, phase or amplitude modulation mode of the laser for realizing the quantum logic gate according to the related principle about quantum computation in the related technology. By determining the frequency, phase or amplitude modulation mode and the like of laser, a quantum logic gate between any two ions can be designed by adopting the related technology; the embodiment of the invention realizes a double-quantum logic gate between two ions based on multi-dimensional ion array operation
Figure GDA0003834535150000072
Where i and j represent two target ions,
Figure GDA0003834535150000073
denotes the Pauli (Pauli) X operator on ion i.
The operation unit is configured to: and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser.
In an illustrative example, the design idea of the quantum logic gate is as follows: the two target ions are selectively irradiated by laser to generate acting force depending on ion spin, so that the target ions move in a phase space, and phase space tracks corresponding to different spin states of the target ions can be calculated according to a collective normal mode of the target ions and related parameters of the laser.
In an exemplary embodiment, the phase space trajectories corresponding to different spin states of the target ion are all closed or approximately closed through determining relevant parameters such as the frequency, the phase or the amplitude modulation mode of the laser, and the area enclosed by the phase space trajectories corresponds to the phase to be realized by the dual-quantum bit logic gate of the target ion. When the target ions comprise ion micromotion, the phase space track has ion micromotion frequency omega rf And high-order frequency multiplication high-frequency oscillation of the double-quantum logic gate can be optimized by a relevant numerical method to obtain the double-quantum logic gate. For the amplitude modulation example, for the laser sequence with total time T on the ith target ion, the displacement of the caused kth collective normal mode is proportional to
Figure GDA0003834535150000081
Wherein the signs represent the opposite displacements of the ions corresponding to the two spin states, Ω i (t) describes the amplitude of the laser light on the ith target ion at time t, μ represents the detuning of the laser light with respect to the target ion transition frequency,
Figure GDA0003834535150000082
showing the equilibrium distribution of the target ions
Figure GDA0003834535150000083
Induced ion-induced oscillation of the laser phase, α s (s = x, y, z) is a unit vector for describing the propagation direction of the laser light
Figure GDA0003834535150000084
To close the phase space trajectory of the target ion, Σ may be selected i,k |D i,k | 2 Amplitude sequence omega for laser light with constraint of area of trace equal to required phase pi/4 as target function i (t) adjusting so that the target ion displacement remaining at the end of the sequence is as small as possible. This is an optimization problem of a multivariate function under given constraints, which can be used with the present inventionAnd are treated in a manner customary to those skilled in the art.
In an exemplary embodiment, the dual qubit logic gate according to the embodiment of the present invention may be implemented as any multi-qubit logic gate in cooperation with a single qubit logic gate by using a correlation technique. For the 171 Yb + Ions, each target ion being selectable by a pair of lasers propagating in different directions; FIG. 5 is a schematic diagram of target ion selection achieved by laser according to an embodiment of the present invention, as shown in FIG. 5, two pairs of lasers propagating in different directions are applied to two adjacent target ions in a multi-dimensional ion array, so as to cause Raman transitions (Raman transitions) of the target ions and couple states of ion qubits to a collective normal mode; two pairs of modulated lasers are simultaneously irradiated on two target ions, and the required double-quantum logic gate can be realized after a set time; the left two lasers labeled 1 in fig. 5 are used to select their commonly directed target ions labeled a and the right two lasers labeled 2 are used to select their commonly directed target ions labeled b.
FIG. 6 is a schematic diagram of a laser amplitude sequence of an embodiment of the present invention, as shown in FIG. 6, a fixed Raman laser (amplitude sequence is Ω - i (t)) the detuning relative to the target ion transition is 2 pi × 7.3124 megahertz (MHz), the time of the whole double quantum logic gate is equally divided into 15 segments by 300 microseconds, the laser amplitude on each segment is modulated (plotted by the Rabi frequency (Rabi frequency) of the raman transition) as shown in the figure, and after the laser intensity changes along with the time, the embodiment of the invention can realize the high-fidelity double quantum logic gate between two selected target ions.
In the embodiment of the invention, a multidimensional ion array collective normal mode meeting preset precision is obtained by solving; determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array; and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser. The quantum logic gate of the high-fidelity multi-dimensional ion array is realized, and technical support is provided for the application of ion quantum computation.
The design of the double-quantum-bit logic gate in the embodiment of the invention is related to parameters such as the selected ion species, the form of the confined electric field, the spatial orientation of laser, the modulation mode and the like, and the selection of the spatial orientation of the laser depends on the structure of an electrode used for generating the confined electric field; however, these parameters are only provided for designing the dual qubit logic gate and do not affect the implementation of the embodiments of the present invention. In the actual implementation process, the system which fails to meet the ideal working parameters is only reduced in the aspects of performance, efficiency and the like.
The embodiment of the invention also provides a computer storage medium, wherein a computer program is stored in the computer storage medium, and when being executed by a processor, the computer program realizes the method for realizing the quantum logic gate.
An embodiment of the present invention further provides an electronic device, including: a memory and a processor, the memory having stored therein a computer program; wherein,
the processor is configured to execute the computer program in the memory;
the computer program, when executed by a processor, implements a method of implementing a quantum logic gate as described above.
Fig. 7 is a flowchart of a method for implementing a quantum logic gate according to an embodiment of the present invention, as shown in fig. 7, including:
step 701, solving a multidimensional ion array to obtain a collective normal mode meeting preset precision;
in one illustrative example, solving to obtain a collective normal mode that satisfies a predetermined precision includes:
determining a truncation order of the collective normal mode according to a preset precision;
substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton motion equation determined according to the Coulomb interaction between the constraint electric field and the ions for solving to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision;
wherein the confining electric field is used to form a multi-dimensional array of ions.
In one illustrative example, a multidimensional ion array of embodiments of the present invention satisfies one of the following conditions:
the ratio of the vibration frequency of the equivalent simple harmonic potential of the constrained electric field in any main shaft direction to the constrained electric fields in other two main shaft directions is larger than a first preset value;
the ratio of the vibration frequencies of the equivalent simple harmonic potentials of the constrained electric fields in any two main shaft directions is smaller than a second preset value.
In an exemplary embodiment, the first predetermined value is greater than or equal to 10.
In one illustrative example, the second predetermined value is less than or equal to 10.
In an exemplary embodiment, solving to obtain a collective normal mode satisfying a preset accuracy includes:
determining a truncation order of the collective normal mode according to a preset precision;
substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision;
wherein the confining electric field is used to form a multi-dimensional array of ions.
Step 702, determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of a multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array;
in an illustrative example, the relevant parameters include one or any combination of the following:
frequency, phase and amplitude modulation.
And 703, operating and realizing a quantum logic gate between ion quantum bits through the determined relevant parameters of the laser.
The embodiment of the invention obtains a multi-dimensional ion array collective normal mode meeting the preset precision by solving; determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array; and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser. The quantum logic gate of the high-fidelity multidimensional ion array is realized, and technical support is provided for the application of ion quantum computation.
In embodiments of the present invention, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like may refer to orientations or positional relationships illustrated in the drawings, which are used for convenience in describing embodiments of the present invention and to simplify the description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the embodiments of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In embodiments of the invention, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. The foregoing terminology, which is used for the purpose of illustration, is not necessarily intended to be exhaustive or to limit the scope of the invention to the precise embodiments disclosed. Furthermore, the described features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art will be able to combine and combine features of different embodiments or examples and features of different embodiments or examples described in this specification without departing from the scope of the invention.
Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made in the above embodiments by those skilled in the art within the scope of the present invention.

Claims (10)

1. An apparatus implementing a quantum logic gate, comprising: the device comprises a solving unit, a determining unit and an operating unit; wherein,
the solving unit is set as follows: solving the multidimensional ion array to obtain a collective normal mode meeting preset precision; the solving to obtain the collective normal mode meeting the preset precision comprises the following steps: determining a truncation order of the collective normal mode according to a preset precision; substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision;
the determination unit is configured to: determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and solving an obtained collective normal mode of the multi-dimensional ion array;
the operation unit is configured to: and operating to realize quantum logic gates between ion qubits through the determined relevant parameters of the laser.
2. The apparatus of claim 1, wherein the multi-dimensional ion array satisfies one of the following conditions:
the ratio of the vibration frequency of the equivalent simple harmonic potential of the constrained electric field in any main shaft direction and the constrained electric fields in other two main shaft directions is larger than a first preset value;
the ratio of the vibration frequencies of the equivalent simple harmonic potentials of the constrained electric fields in any two main shaft directions is smaller than a second preset value.
3. The apparatus of claim 1, wherein the related parameters comprise one or any combination of the following:
frequency, phase and amplitude modulation.
4. The device according to claim 2, characterized in that said first preset value is greater than or equal to 10.
5. The apparatus of claim 2, wherein the second predetermined value is less than or equal to 10.
6. The apparatus of claim 1~5 wherein the confined electric field is used to form the multi-dimensional array of ions.
7. A method of implementing a quantum logic gate, comprising:
solving the multidimensional ion array to obtain a collective normal mode meeting preset precision;
determining relevant parameters of laser for realizing a quantum logic gate through ion balance distribution of the multi-dimensional ion array and a collective normal mode of the multi-dimensional ion array obtained by solving;
operating a quantum logic gate between the ion qubits by the determined laser-related parameters;
the solving and obtaining of the collective normal mode meeting the preset precision comprises the following steps: determining a truncation order of the collective normal mode according to a preset precision; and substituting the ion balance distribution and the determined truncation order of the collective normal mode into a Newton's equation of motion determined according to the Coulomb interaction between the constraint electric field and the ions to solve, so as to obtain the collective normal mode of the multi-dimensional ion array meeting the preset precision.
8. The method of claim 7, wherein the confining electric field is used to form the multi-dimensional ion array.
9. A computer storage medium having stored thereon a computer program which, when executed by a processor, implements a method of implementing a quantum logic gate as claimed in any one of claims 7~8.
10. An electronic device, comprising: a memory and a processor, the memory having a computer program stored therein; wherein,
the processor is configured to execute the computer program in the memory;
the computer program, when executed by the processor, implements a method of implementing a quantum logic gate as claimed in any one of claims 7~8.
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