CN111739989A - AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof - Google Patents
AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof Download PDFInfo
- Publication number
- CN111739989A CN111739989A CN202010722267.7A CN202010722267A CN111739989A CN 111739989 A CN111739989 A CN 111739989A CN 202010722267 A CN202010722267 A CN 202010722267A CN 111739989 A CN111739989 A CN 111739989A
- Authority
- CN
- China
- Prior art keywords
- layer
- algan
- silicon carbide
- deep ultraviolet
- ultraviolet led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 135
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 52
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000000903 blocking effect Effects 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 29
- 230000008569 process Effects 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 229910017083 AlN Inorganic materials 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229960000074 biopharmaceutical Drugs 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005180 public health Effects 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof, wherein the AlGaN-based deep ultraviolet LED epitaxial wafer comprises: the solar cell comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer and a p-type doped GaN film grown on the electron blocking layer. According to the invention, a stripping process is not needed, so that the external quantum efficiency is greatly improved; the dislocation formation can be reduced, the radiation recombination efficiency of carriers is improved, and the deep ultraviolet LED with high heat conduction, high electric conduction and high light-emitting performance can be obtained; the current distribution of the deep ultraviolet LED is more uniform, the light emitting efficiency is improved, and meanwhile, the heat dissipation capability is good; the preparation process is simple and has repeatability.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof.
Background
The deep ultraviolet light has wide application prospect in the fields of national defense technology, information technology, bio-pharmaceuticals, environmental monitoring, public health, sterilization, disinfection and the like. The traditional ultraviolet light sources used at present are gas lasers and mercury lamps, and have the defects of large volume, high energy consumption, pollution and the like. An AlGaN-based compound semiconductor ultraviolet Light Emitting Diode (LED) is a solid ultraviolet light source and has the advantages of small volume, high efficiency, long service life, environmental friendliness, low energy consumption, no pollution and the like. The AlGaN material with high Al component is an irreplaceable material system for preparing high-performance deep ultraviolet LEDs, has great requirements in civil and military aspects, such as the medical and health fields of sterilization, cancer detection, skin disease treatment and the like, and has the advantages of no mercury pollution, adjustable wavelength, small volume, good integration, low energy consumption, long service life and the like.
However, various properties of the AlGaN-based deep ultraviolet LED epitaxial wafer provided in the prior art need to be improved.
Disclosure of Invention
The invention aims to provide an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof, and aims to solve the problem that the quality of the AlGaN-based deep ultraviolet LED epitaxial wafer in the prior art needs to be improved.
The embodiment of the invention provides an AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate, which comprises: the solar cell comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer and a p-type doped GaN film grown on the electron blocking layer.
Further, the thickness of the Ag layer is 500-1000 nm.
Further, the AlN buffer layer is 5-50 nm thick.
Further, the thickness of the AlGaN buffer layer is 300-500 nm.
Further, the thickness of the undoped AlGaN layer is 500-800 nm.
Furthermore, the thickness of the n-type doped AlGaN layer is 3-5 μm.
Further, the AlGaN multi-quantum well layer is Al with 7-10 periods0.3Ga0.7N well layer and Al0.5Ga0.5N barrier layer of Al0.3Ga0.7The thickness of the N well layer is 2-3 nm, and Al is0.5Ga0.5The thickness of the N barrier layer is 10-13 nm.
Further, the electron blocking layer is Al0.4Ga0.6And the thickness of the electron blocking layer is 20-50 nm.
Further, the thickness of the p-type doped GaN film is 300-350 nm.
The embodiment of the invention also provides a preparation method of the AlGaN-based deep ultraviolet LED epitaxial wafer based on the silicon carbide substrate, which comprises the following steps:
selecting a silicon carbide substrate;
depositing an Ag layer on the silicon carbide substrate;
growing an AlN buffer layer on the Ag layer;
growing an AlGaN buffer layer on the AlN buffer layer;
growing a non-doped AlGaN layer on the AlGaN buffer layer;
epitaxially growing an n-type doped AlGaN layer on the undoped AlGaN layer;
epitaxially growing an AlGaN multi-quantum well layer on the n-type doped AlGaN layer;
epitaxially growing an electronic barrier layer on the AlGaN multi-quantum well layer;
and epitaxially growing a p-type doped GaN film on the electron blocking layer.
The embodiment of the invention provides an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof, wherein the AlGaN-based deep ultraviolet LED epitaxial wafer comprises: the solar cell comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer and a p-type doped GaN film grown on the electron blocking layer. According to the invention, the Ag layer is epitaxially grown on the silicon carbide substrate to serve as the reflecting layer, so that the phenomenon that a substrate stripping process used in the traditional process of growing the deep ultraviolet LED by adopting the silicon carbide substrate is not needed due to the absorption characteristic of the silicon carbide substrate to ultraviolet light is avoided, and the external quantum efficiency of the device is greatly improved; the deep ultraviolet LED epitaxial wafer prepared by the invention can effectively reduce the formation of dislocation, prepare the high-quality deep ultraviolet LED epitaxial wafer, improve the radiation recombination efficiency of current carriers, and obtain the deep ultraviolet LED with high heat conduction, high electric conduction and high luminescence performance; the Ag layer is used as a reflecting layer, and the silicon carbide substrate is completely reserved as a substrate and provides support, so that the current distribution of the deep ultraviolet LED is more uniform, the light emitting efficiency is improved, and meanwhile, the heat dissipation capability is good; the preparation process is simple, has repeatability and can realize large-scale production and application.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for preparing an AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to an embodiment of the present invention;
fig. 3 is an electroluminescence spectrum of an AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the specification of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
Referring to fig. 1, an embodiment of the present invention provides an AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate, including: the semiconductor device comprises a silicon carbide substrate 101, an Ag layer 102 deposited on the silicon carbide substrate 101, an AlN buffer layer 103 grown on the Ag layer 102, an AlGaN buffer layer 104 grown on the AlN buffer layer 103, an undoped AlGaN layer 105 grown on the AlGaN buffer layer 104, an n-type doped AlGaN layer 106 grown on the undoped AlGaN layer 105, an AlGaN multi-quantum well layer 107 grown on the n-type doped AlGaN layer 106, an electron blocking layer 108 grown on the AlGaN multi-quantum well layer 107, and a p-type doped GaN thin film 109 grown on the electron blocking layer 108.
The AlGaN-based deep ultraviolet LED epitaxial wafer prepared by the embodiment of the invention has the advantages of low defect density, good crystallization quality and good electrical and optical properties.
The silicon carbide substrate 101 may be a common commercial substrate.
Further, the Ag layer 102 is deposited directly on the silicon carbide substrate 101. The thickness of the Ag layer 102 is preferably 500-.
Further, the AlN buffer layer 103 is preferably 5 to 50nm thick. The AlN buffer layer 103 is used to reduce the lattice mismatch between the silicon carbide substrate 101 and the AlGaN material.
Further, the thickness of the AlGaN buffer layer 104 is preferably 300to 500 nm. The AlGaN buffer layer 104 is used to provide a template for growing AlGaN material.
Further, the thickness of the undoped AlGaN layer 105 is preferably 500 to 800 nm. Since the AlGaN buffer layer 104 has a high defect density, an undoped AlGaN layer 105 is grown before the active layer (i.e., n-type, multi-quantum well layer, p-type layer) is grown. The AlGaN buffer layer 104 and the undoped AlGaN layer 105 are made of the same material and are both AlGaN, and because AlGaN having lattice mismatch with AlN is grown on AlN and there are a lot of defects, one layer of AlGaN is grown as a buffer layer, and then a layer of undoped AlGaN is grown to prepare for the next layer of n-type AlGaN, which is named as an undoped AlGaN layer and mainly used to distinguish n-type AlGaN layers.
Further, the thickness of the n-type doped AlGaN layer 106 is preferably 3 to 5 μm, the n-type doped AlGaN layer 106 may be doped with Si, and the Si doping concentration is 1 × 1017～1×1020cm-3。
Further, the AlGaN multi-quantum well layer 107 is Al with 7-10 periods0.3Ga0.7N well layer and Al0.5Ga0.5N barrier layer of Al0.3Ga0.7The thickness of the N well layer is preferably 2-3 nm, and Al is0.5Ga0.5The thickness of the N barrier layer is preferably 10-13 nm. The total thickness of the AlGaN MQW layer 107 is 80 to 160 nm. Herein, thePeriod means a layer of Al0.3Ga0.7N well layer and one layer of Al0.5Ga0.5The N barrier layers are alternately arranged to form a period, and 7-10 periods are arranged in total.
Further, the electron blocking layer 108 is Al0.4Ga0.6And the thickness of the electron blocking layer 108 is preferably 20-50 nm. The n-type doped AlGaN, AlGaN multi-quantum well layer and p-type doped GaN form a light emitting layer; in order to avoid that the injected electrons cannot be efficiently radiatively recombined in the active region, the electron blocking layer is interposed between the p-type GaN and the quantum barrier.
Further, the thickness of the p-type doped GaN film 109 is preferably 300-350 nm.
Referring to fig. 2, an embodiment of the present invention further provides a method for preparing the AlGaN based deep ultraviolet LED epitaxial wafer based on the silicon carbide substrate, as shown in fig. 2, where the method includes steps S201 to S209:
s201, selecting a silicon carbide substrate;
s202, depositing an Ag layer on the silicon carbide substrate;
s203, growing an AlN buffer layer on the Ag layer;
s204, growing an AlGaN buffer layer on the AlN buffer layer;
s205, growing a non-doped AlGaN layer on the AlGaN buffer layer;
s206, epitaxially growing an n-type doped AlGaN layer on the undoped AlGaN layer;
s207, epitaxially growing an AlGaN multi-quantum well layer on the n-type doped AlGaN layer;
s208, epitaxially growing an electronic barrier layer on the AlGaN multi-quantum well layer;
and S209, epitaxially growing a p-type doped GaN film on the electron blocking layer.
According to the preparation method provided by the embodiment of the invention, the Ag layer is deposited on the silicon carbide substrate and is used as a mirror surface, so that the problem that the silicon carbide absorbs ultraviolet light is effectively solved, meanwhile, the Ag layer can be used as a conducting layer, the phenomenon that evaporation plating of electrodes is carried out again in the chip manufacturing process is avoided, and the LED chip manufacturing process is effectively simplified.
Specifically, in the step S202, an Ag layer is deposited by a thermal evaporation method, wherein the deposition temperature is 200-300 ℃, and the thickness of the Ag layer is 500-1000 nm;
preferably, in step S203, an AlN buffer layer is grown by a magnetron sputtering method, the growth temperature is 400 to 500 ℃, and the thickness of the AlN buffer layer is 5 to 50 nm.
Preferably, in step S204, an AlGaN buffer layer is grown on the AlN buffer layer by metal organic chemical vapor deposition under the following process conditions: the pressure in the reaction chamber is 50-300 torr, the temperature of the Si substrate is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in step S205, an undoped AlGaN layer is grown on the AlGaN buffer layer by using a metal organic chemical vapor deposition method, where the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the temperature of the Si substrate is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in step S206, an n-type doped AlGaN layer is grown on the undoped AlGaN layer by a metal organic chemical vapor deposition method under the process conditions that the pressure of a reaction chamber is 50-300 torr, the temperature of a Si substrate is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, the growth rate is 2-4 μm/h, the n-type doped AlGaN layer is doped with Si, and the doping concentration of Si is 1 × 1017～1×1020cm-3。
Preferably, in step S207, Al is grown on the n-type doped AlGaN layer for 7 to 10 periods by using a metal organic chemical vapor deposition method0.3Ga0.7N well layer/Al0.5Ga0.5N base layers, the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the temperature of the Si substrate is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in step S208, Al is grown on the AlGaN multi-quantum well layer by using a metal organic chemical vapor deposition method0.4Ga0.6The process conditions of the N electron blocking layer are as follows: the pressure in the reaction chamber is 50-300 torr, and the temperature of the Si substrate is 1000-1260 DEG CThe beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in step S209, a p-type doped GaN film is grown on the electron blocking layer by metal organic chemical vapor deposition, wherein the process conditions are as follows: the pressure in the reaction chamber is 50 to 300torr, the temperature of the Si substrate is 1000 to 1060 ℃, the beam current ratio V/III is 3000 to 5000, and the growth rate is 2 to 4 μm/h.
An Electroluminescence (EL) spectrum of the AlGaN-based deep ultraviolet LED epitaxial wafer prepared by the embodiment of the present invention is shown in fig. 3.
In the prior art, a reflecting electrode such as Ag is deposited on a p-type GaN contact surface, then a transfer substrate is bonded, a silicon substrate grown originally is removed, and an n-type electrode such as Ag is deposited on n-type AlzGa1-zThe surface of the N layer, the LED chip manufactured finally, the p layer electrode is arranged at the bottom, the N type electrode is arranged at the top of the LED chip, and generally, the deposition of the reflecting electrode and the substrate transfer bonding are involved, so that the process is complex and tedious. According to the embodiment of the invention, the defect that the silicon carbide substrate absorbs deep ultraviolet is overcome by adopting the Ag layer, the processes of evaporating the reflecting electrode layer for multiple times, removing the silicon carbide substrate and the like in the chip manufacturing process are avoided, and after the epitaxial wafer is obtained, the p-type electrode is directly deposited on the surface of the p-type GaN, so that the LED chip with the vertical structure that the n-type electrode is arranged at the bottom and the p-type electrode is arranged at the top can be obtained.
In addition, as the deep ultraviolet LED is manufactured by using the AlGaN epitaxial layer with high Al content to achieve the required forbidden bandwidth, and the traditional epitaxial substrates such as sapphire and silicon are not satisfactory in the epitaxial process of the deep ultraviolet LED, for example, the lattice mismatch between the sapphire, silicon and AlN buffer layer is large, and the induced stress can cause the epitaxial layer to crack; although the silicon carbide substrate has obvious advantages in lattice mismatch compared with a sapphire substrate and is suitable for growth of high-Al-component GaN materials, due to the absorption characteristic of the silicon carbide substrate to ultraviolet light, the silicon carbide substrate needs to be stripped generally, and an AlGaN active layer is transferred to the silicon substrate, so that the deep ultraviolet LED chip is manufactured. According to the embodiment of the invention, silicon carbide is used as the substrate of the deep ultraviolet LED, and the Ag layer is epitaxially grown on the silicon carbide substrate in advance to be used as the reflecting layer, so that the phenomenon that the silicon carbide substrate absorbs ultraviolet light is avoided, a substrate stripping process used in the process of growing the deep ultraviolet LED by using the silicon carbide substrate in the prior art is not needed, and the external quantum efficiency of the device is greatly improved; the invention is a private deep ultraviolet LED epitaxial wafer, can effectively reduce the formation of dislocation, prepare a high-quality deep ultraviolet LED epitaxial wafer, improve the radiation recombination efficiency of current carriers, and prepare a deep ultraviolet LED with high heat conduction, high electric conduction and high luminous performance; the Ag layer is used as a reflecting layer, and the silicon carbide substrate is completely reserved as a substrate and provides support, so that the current distribution of the deep ultraviolet LED is more uniform, the light emitting efficiency is improved, and meanwhile, the heat dissipation capability is good; the preparation method provided by the embodiment of the invention is simple, has repeatability and can realize large-scale production and application.
The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Claims (10)
1. The utility model provides an AlGaN base deep ultraviolet LED epitaxial wafer based on carborundum substrate which characterized in that includes: the solar cell comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer and a p-type doped GaN film grown on the electron blocking layer.
2. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate as claimed in claim 1, wherein the thickness of the Ag layer is 500-1000 nm.
3. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the AlN buffer layer has a thickness of 5 to 50 nm.
4. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the AlGaN buffer layer has a thickness of 300-500 nm.
5. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the thickness of the undoped AlGaN layer is 500-800 nm.
6. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the thickness of the n-type doped AlGaN layer is 3-5 μm.
7. The silicon carbide substrate-based AlGaN-based according to claim 1The deep ultraviolet LED epitaxial wafer is characterized in that the AlGaN multi-quantum well layer is Al with 7-10 periods0.3Ga0.7N well layer and Al0.5Ga0.5N barrier layer of Al0.3Ga0.7The thickness of the N well layer is 2-3 nm, and Al is0.5Ga0.5The thickness of the N barrier layer is 10-13 nm.
8. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the electron blocking layer is Al0.4Ga0.6And the thickness of the electron blocking layer is 20-50 nm.
9. The AlGaN-based deep ultraviolet LED epitaxial wafer based on a silicon carbide substrate according to claim 1, wherein the thickness of the p-type doped GaN thin film is 300-350 nm.
10. The preparation method of the AlGaN-based deep ultraviolet LED epitaxial wafer based on the silicon carbide substrate according to any one of claims 1 to 9, comprising the following steps:
selecting a silicon carbide substrate;
depositing an Ag layer on the silicon carbide substrate;
growing an AlN buffer layer on the Ag layer;
growing an AlGaN buffer layer on the AlN buffer layer;
growing a non-doped AlGaN layer on the AlGaN buffer layer;
epitaxially growing an n-type doped AlGaN layer on the undoped AlGaN layer;
epitaxially growing an AlGaN multi-quantum well layer on the n-type doped AlGaN layer;
epitaxially growing an electronic barrier layer on the AlGaN multi-quantum well layer;
and epitaxially growing a p-type doped GaN film on the electron blocking layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010722267.7A CN111739989A (en) | 2020-07-24 | 2020-07-24 | AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010722267.7A CN111739989A (en) | 2020-07-24 | 2020-07-24 | AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111739989A true CN111739989A (en) | 2020-10-02 |
Family
ID=72657622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010722267.7A Pending CN111739989A (en) | 2020-07-24 | 2020-07-24 | AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111739989A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397621A (en) * | 2020-10-30 | 2021-02-23 | 华灿光电(苏州）有限公司 | Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof |
| CN113257969A (en) * | 2021-05-10 | 2021-08-13 | 广东先导稀材股份有限公司 | Nonpolar AlGaN-based ultraviolet LED epitaxial wafer and preparation method thereof |
| CN113690350A (en) * | 2021-07-29 | 2021-11-23 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN115332408A (en) * | 2022-10-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
| CN116819805A (en) * | 2023-06-20 | 2023-09-29 | 中国科学院上海微系统与信息技术研究所 | Preparation method of optical modulator based on silicon carbide carriers and optical modulator |
-
2020
- 2020-07-24 CN CN202010722267.7A patent/CN111739989A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397621A (en) * | 2020-10-30 | 2021-02-23 | 华灿光电(苏州）有限公司 | Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof |
| CN112397621B (en) * | 2020-10-30 | 2022-03-18 | 华灿光电(苏州）有限公司 | Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof |
| CN113257969A (en) * | 2021-05-10 | 2021-08-13 | 广东先导稀材股份有限公司 | Nonpolar AlGaN-based ultraviolet LED epitaxial wafer and preparation method thereof |
| CN113690350A (en) * | 2021-07-29 | 2021-11-23 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN113690350B (en) * | 2021-07-29 | 2023-05-09 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN115332408A (en) * | 2022-10-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
| CN115332408B (en) * | 2022-10-18 | 2023-01-31 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
| CN116819805A (en) * | 2023-06-20 | 2023-09-29 | 中国科学院上海微系统与信息技术研究所 | Preparation method of optical modulator based on silicon carbide carriers and optical modulator |
| CN116819805B (en) * | 2023-06-20 | 2024-05-28 | 中国科学院上海微系统与信息技术研究所 | Preparation method of optical modulator based on silicon carbide carriers and optical modulator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111739989A (en) | AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof | |
| RU2394305C2 (en) | Semiconductor device with built-in contacts (versions) and method of making semiconductor devices with built-in contacts (versions) | |
| TWI445052B (en) | Growth of indium gallium nitride (ingan) on porous gallium nitride (gan) template by metal-organic chemical vapor deposition (mocvd) | |
| KR20090058952A (en) | Light emitting device using nano-rod and method for manufacturing the same | |
| CN109411579B (en) | Semiconductor device with graphene structure and preparation method thereof | |
| CN111916537A (en) | Nonpolar AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof | |
| CN212323022U (en) | AlGaN-based deep ultraviolet LED epitaxial wafer | |
| CN103996764B (en) | LED epitaxial wafer growing on Ag substrate and preparing method and application of LED epitaxial wafer | |
| CN114335274B (en) | Epitaxial structure of light emitting diode and preparation method thereof | |
| CN111326611B (en) | Method for etching table top of III-nitride semiconductor light-emitting device | |
| CN203950831U (en) | Be grown in the LED epitaxial wafer of Cu substrate | |
| CN109686821B (en) | Preparation method of epitaxial wafer of light-emitting diode | |
| JP5115925B2 (en) | Microcrystalline nitride semiconductor optical / electronic devices with controlled crystal orientation and facets | |
| CN109411580B (en) | Gallium nitride-based power device and preparation method thereof | |
| KR20120029256A (en) | Semiconductor light emitting device and a method for fabricating the same | |
| KR20130068448A (en) | Light emitting diode | |
| KR100814920B1 (en) | Vertically structured gan type semiconductor light emitting device and method of manufacturing the same | |
| CN212323021U (en) | Nonpolar AlGaN-based deep ultraviolet LED epitaxial wafer | |
| CN112563380A (en) | AlGaN-based deep ultraviolet LED epitaxial wafer with Si substrate and preparation method thereof | |
| CN212542464U (en) | Ultraviolet LED epitaxial wafer grown on Si substrate | |
| CN103996758A (en) | LED epitaxial wafer growing on Cu substrate and preparing method and application of LED epitaxial wafer | |
| CN203895486U (en) | LED epitaxial wafer grown on Ag substrate | |
| CN213816182U (en) | AlGaN-based deep ultraviolet LED epitaxial wafer with Si substrate | |
| CN213816179U (en) | AlGaN-based deep ultraviolet LED epitaxial wafer | |
| CN112271240B (en) | AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |