CN110164759A - A kind of regionality stratified sedimentation diffusion technique - Google Patents
A kind of regionality stratified sedimentation diffusion technique Download PDFInfo
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- CN110164759A CN110164759A CN201910339128.3A CN201910339128A CN110164759A CN 110164759 A CN110164759 A CN 110164759A CN 201910339128 A CN201910339128 A CN 201910339128A CN 110164759 A CN110164759 A CN 110164759A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004062 sedimentation Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 80
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 53
- 239000011574 phosphorus Substances 0.000 claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 83
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 57
- 229910019213 POCl3 Inorganic materials 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 38
- 229910052760 oxygen Inorganic materials 0.000 claims description 38
- 239000001301 oxygen Substances 0.000 claims description 38
- 238000010792 warming Methods 0.000 claims description 19
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 16
- 235000008216 herbs Nutrition 0.000 claims description 13
- 210000002268 wool Anatomy 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 9
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- 230000008569 process Effects 0.000 abstract description 13
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 7
- 230000004044 response Effects 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000002019 doping agent Substances 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 26
- 238000000151 deposition Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
- H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to crystal silicon solar energy battery technical fields, to solve the problems, such as that existing PERC+LDSE cell piece surface dopant concentration is excessively high, regional diffusion-controllable is weak, battery blue response is poor, minority carrier life time is low, provide a kind of regional stratified sedimentation diffusion technique, comprising the following steps: (1) silicon wafer pre-processes；(2) it pre-oxidizes；(3) low-temperature and low-concentration phosphorus source deposits；(4) concentration phosphorus source deposits in high temperature；(5) PN junction is formed；(6) low temperature and high concentration phosphorus source deposits；(7) cooling, quartz boat is released, by silicon chip extracting.The present invention allows the existing uniform phosphorosilicate glass layer of silicon chip surface using regional layering diffusion control, is conducive to laser SE heavy doping, to improve the Ohmic contact and good contact performance of cell piece；Emitter region can be made to have the PN junction of low doping concentration and high quality again, so that cell piece be made to have the characteristics of excellent blue response and high minority carrier life time, the final transfer efficiency for promoting cell piece.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technical fields more particularly to a kind of regional stratified sedimentation to spread work
Skill.
Background technique
Crystal silicon solar battery technology iteration bring cost, which declines, gradually becomes the major impetus for pushing industry development, and nearly two
Nian Lai, photovoltaic industry battery technology experienced from conventional BSF battery → PERC battery → PERC+LDSE battery conversion, wherein
PERC+LDSE battery process process are as follows: making herbs into wool → diffusion → laser SE → etching → back passivation → front PECVD → back side
PECVD → laser slotting → silk-screen printing → sintering → test, the battery technology is compared with similar PERC battery, in diffusion work
One of laser SE process is merely added before sequence, remaining process is constant.
Laser SE process is the phosphorosilicate glass layer that is generated using diffusing procedure as doped source, using the fuel factor of laser,
Silicon wafer surface layer is melted, the P atom being covered in the phosphorosilicate glass of emitter top is entered into silicon wafer surface layer, because phosphorus atoms are in liquid
Diffusion coefficient in silicon several orders of magnitude higher than diffusion in solid-state silicon, adulterate the position that phosphorus atoms replace silicon atom after solidification
It sets, so that cell piece be made to form highly doped regions under metal electrode, shallowly diffuses to form doped regions in the region for receiving illumination,
The few son of this body structure surface is compound few, can form good Ohmic contact again between metal electrode and emitter, can obtain higher
Short circuit current, open-circuit voltage and fill factor, so that solar cell transfer efficiency can be improved.
Although currently, to laser SE doping selective emitter solar battery theoretical research and experiment report it is very much,
But in actual large-scale production, be limited to the influence of diffusion technique, however it remains the uniformity of diffusion high square resistance, light
The problems such as heavy doping phosphorus source concentration is excessive or very few, weight doped region square resistance matches.If doping concentration is too low, silicon chip surface
Doped layer phosphorosilicate glass is very little, though surface recombination can be reduced, improves minority carrier life time, and it is poor to will lead to sheet resistance uniformity, electricity
Pond piece Ohmic contact is bad, the increase of contact resistance, influences the series connection of battery, fill factor decline, and battery efficiency reduces；Doping
Excessive concentration, though available preferable sheet resistance uniformity, lower contact resistance, high doping concentration will lead to current-carrying
Son is compound to become larger, and minority carrier life time reduces, and influences the open-circuit voltage and short circuit current of battery.
" a kind of solar battery emitter dopant profiles method " is disclosed in Chinese patent literature, application publication number is
CN104716232A, which, which uses, realizes solar cell emitter doping point by the process of multiple TongYuan and multiple knot
Cloth, silicon chip surface produces one layer of uniform phosphorosilicate glass layer when realizing laser SE, but there are still doping concentrations excessively high, region
Property doping controllability it is weak the disadvantages of.
" a kind of diffusion technique of laser doping selective emitter junction ", application publication number are disclosed in Chinese patent literature
For CN103050581A, which is carrying out active diffusion to silicon wafer, passive is pushing away by changing the method for diffusion of transmitting junction battery
It is passed through again into diffusion furnace on the basis of and carries POCl3Nitrogen carry out deposition processes, which drops to a certain extent
Low surface recombination, but still the disadvantages such as domain of the existence diffusion-controllable is weak, minority carrier life time is low.
That there are still doping concentrations is excessively high for above-mentioned silicon chip surface in the prior art, regional doping controllability is weak, battery blue light
The disadvantages such as difference in response, minority carrier life time be low, are unfavorable for the promotion of PERC+LDSE solar cell transfer efficiency.
Summary of the invention
The present invention in order to solve existing PERC+LDSE cell piece surface dopant concentration is excessively high, regional diffusion-controllable is weak,
The problem that battery blue response is poor, minority carrier life time is low, provides a kind of regional stratified sedimentation diffusion technique, which adopts
It is layered diffusion control with regionality, the existing uniform phosphorosilicate glass layer of silicon chip surface is allowed, is conducive to laser SE heavy doping, to improve
The Ohmic contact of cell piece and good contact performance, and emitter region can be made to have the PN of low doping concentration and high quality
Knot, so that cell piece be made to have the characteristics of excellent blue response and high minority carrier life time, the final transfer efficiency for promoting cell piece.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of regionality stratified sedimentation diffusion technique, comprising the following steps:
(1) by after the cleaning of p-type original silicon chip, making herbs into wool, it is put into quartz boat, and be pushed into the boiler tube of diffusion furnace；
(2) diffusion furnace is warming up to 680~720 DEG C, is passed through nitrogen and oxygen, the silicon wafer after making herbs into wool is pre-oxidized；The step
Suddenly one layer of SiO is grown in silicon chip surface before phosphorus oxychloride deposition2Film, because diffusion coefficient of the foreign matter of phosphor in oxide layer is much smaller than
Diffusion coefficient in silicon, this SiO2Film has the ability for stopping foreign matter of phosphor to spread into silicon, thus slow down the speed of phosphorus diffusion,
The P-N junction for spreading it is more evenly；
(3) low concentration POCl is passed through into diffusion furnace3, nitrogen and oxygen, low-temperature and low-concentration phosphorus is carried out to the silicon wafer after pre-oxidation
Source deposition；The step has SiO in silicon wafer growth2The initial surface of layer, deposits the POCl of relatively thin low concentration for the first time3, low concentration
POCl3The SiO of layer and silicon wafer initial surface2Layer contact can be very good to reduce impurities on surface of silicon chip source concentration, to reduce
Son is compound less, increases the open-circuit voltage of solar cell；
(4) diffusion furnace is warming up to 730~820 DEG C, is passed through middle concentration POCl3, nitrogen and oxygen, it is heavy to low-temperature and low-concentration phosphorus source
Silicon wafer after product carries out concentration phosphorus source deposition in high temperature；Because step (3) deposits the POCl of low concentration for the first time on silicon wafer3, reach
The effect of silicon chip surface low concentration is arrived, but too low concentration bring surface deposition is uneven, by heating up and improving POCl3
Concentration carry out benefit deposition, to ensure that the lower phosphorus source concentration of silicon wafer initiation layer, and compensate for brought by low concentration
The undesirable effect of uniformity, and specifically benefit sedimentation time is short, and oxygen participates in mostly can be with decomposed P OCl3, nitrogen amount suitably increases
It is big to reduce POCl3Concentration enhances boiler tube atmosphere mobility, can still guarantee that first layer phosphorus source concentration is in lower and surface in this way
Uniform state achievees the purpose that regional stratified sedimentation diffusion to reduce the compound of few son；
(5) diffusion furnace is warming up to 850~920 DEG C, is passed through nitrogen, the post-depositional silicon chip surface of concentration phosphorus source is formed in high temperature
PN junction；In conventional diffusion technique, high temperature propulsion can all be added a certain amount of oxygen and be reacted, because of initiation layer in traditional handicraft
POCl3Concentration is higher, if oxygen is very little, the phosphorus pentachloride that phosphorus oxychloride thermal decomposition generates cannot be decomposed sufficiently, influences silicon wafer
Surface state.This step of the invention only exists the POCl of low concentration because of initiation layer3, be not required to be passed through oxygen decompose will not
Silicon chip surface state is destroyed, if being passed through oxygen, POCl can be made3It decomposes too much, causes surface phosphorus concentration lower, influence
The uniformity of PN junction, therefore the present invention only need to be such that the phosphorus atoms in phosphorosilicate glass layer are advanced in silicon wafer in this step by high temperature
Portion, so that the PN junction of high-quality volume low-concentration is formed, the blue response of Lai Zengqiang solar cell；
(6) diffusion furnace is cooled to 680~720 DEG C, is passed through high concentration POCl3, nitrogen and oxygen, to step (5), treated
Silicon wafer carries out low temperature and high concentration phosphorus source deposition；POCl of the step in silicon wafer top layer deposition high concentration3, obtain thicker phosphorus silicon
Glass is conducive to laser SE and forms heavy doping, thus silicon wafer with can obtain more preferably Ohmic contact at electrode and lower contact electricity
Resistance is wherein that the phosphorosilicate glass of the surface layer high concentration outside electrode zone is removed through over etching at non-laser SE, leaves then
It is the impurity active layer of bottom low concentration, electrode zone is made to there are the characteristics that the low and high minority carrier life time of doping concentration, it is final to be promoted
The transfer efficiency of cell piece；
(7) by diffusion furnace cooling down, quartz boat is released, by step (6) treated silicon chip extracting.
Preferably, the volume flow of the oxygen is 3000~5000sccm in step (2)；The volume of the nitrogen
Flow is 3000~5000sccm.Above-mentioned volume flow is controlled to be conducive to obtain the moderate SiO of thickness2Film, to slow down phosphorus expansion
Scattered speed, the P-N junction of diffusion is more evenly.
Preferably, tube pressure control is in 50~150mbar in preoxidation process in step (2)；Preoxidation time control
System is in 10~15min.
Preferably, in step (3), the low concentration POCl3Volume flow is 200~300sccm；The body of the oxygen
Product flow is 700~800sccm, and the volume flow of the nitrogen is 1000~1200sccm.
Preferably, tube pressure control is in 50~150mbar in low-temperature and low-concentration phosphorus source deposition process in step (3)；
Low-temperature and low-concentration phosphorus source sedimentation time is controlled in 3~5min.
Preferably, in step (4), the middle concentration POCl3Volume flow is 500~700sccm；The body of the oxygen
Product flow is 1000~1200sccm；The volume flow of the nitrogen is 1200~1500sccm.In the step, the big ginseng of amount of oxygen
With mostly can be with decomposed P OCl3, nitrogen amount, which suitably increases, reduces POCl3Concentration enhances boiler tube atmosphere mobility, can still protect in this way
Card first layer phosphorus source concentration is in the uniform state in lower and surface, to reduce the compound of few son, it is heavy to reach regional layering
The purpose of product diffusion.
Preferably, in step (4), in high temperature in concentration phosphorus source deposition process tube pressure control 200~
300mbar；The control of concentration phosphorus source sedimentation time is in 1~3min in high temperature.Step benefit sedimentation time is shorter, at the beginning of ensure that silicon wafer
The lower phosphorus source concentration of beginning layer, and compensate for the undesirable effect of uniformity brought by low concentration.
Preferably, the volume flow of the nitrogen is 2000~3500sccm in step (5)；Tube pressure control exists
700~900mbar；The time for forming PN junction controls in 15~20min.
Preferably, in step (6), the high concentration POCl3Volume flow is 900~1000sccm；The oxygen
Volume flow is 500~700sccm, and the volume flow of the nitrogen is 800~1000sccm.
Preferably, in step (6), in low temperature and high concentration phosphorus source deposition process tube pressure control 200~
300mbar；Low temperature and high concentration phosphorus source sedimentation time is controlled in 10~15min.
Therefore, the invention has the following beneficial effects: using regional layering diffusion control, make silicon chip surface existing uniformly
Phosphorosilicate glass layer, be conducive to laser SE heavy doping, to improve the Ohmic contact and good contact performance of cell piece；It can make again
Emitter region has a PN junction of low doping concentration and high quality, low doping concentration be presented as cell piece Uoc improve 1~
1.5mV, so that cell piece be made to have the characteristics of excellent blue response and high minority carrier life time, the final conversion effect for promoting cell piece
Rate.
Detailed description of the invention
Fig. 1 is the flow chart of regional stratified sedimentation diffusion technique of the invention.
Fig. 2 is regional stratified sedimentation diffusion junctions composition of the invention.
In figure: p-type original silicon chip 1, SiO2Layer 2, low concentration POCl3Sedimentary 3, middle concentration POCl3Sedimentary 4, PN junction 5,
High concentration POCl3Sedimentary 6.
Specific embodiment
Below by specific embodiment, and in conjunction with attached drawing, the technical solutions of the present invention will be further described.
In the present invention, if not refering in particular to, all devices and raw material is commercially available or the industry is common are following
Method in embodiment is unless otherwise instructed conventional method in that art.
Embodiment 1
(1) as depicted in figs. 1 and 2, silicon wafer pre-processes: clean simultaneously making herbs into wool for p-type original silicon chip 1, is put into quartz boat, and push away
Enter in the boiler tube of diffusion furnace；
(2) it pre-oxidizes: diffusion furnace is warming up to 680 DEG C, be passed through nitrogen 3000sccm and oxygen 3000sccm, control tube pressure
50mbar carries out pre-oxidation 10min to the silicon wafer after making herbs into wool, forms SiO2Layer 2；
(3) low-temperature and low-concentration POCl3Deposition: diffusion furnace is warming up to 700 DEG C of temperature, is passed through POCl3300sccm, oxygen
700sccm, nitrogen 1000sccm control tube pressure 80mbar, and it is heavy to carry out low-temperature and low-concentration phosphorus source to the silicon wafer after pre-oxidation
Product 5min, forms low concentration POCl3Sedimentary 3；
(4) concentration POCl in heating3Deposition: diffusion furnace is warming up to 750 DEG C of temperature, is passed through POCl3700sccm, oxygen
1000sccm, nitrogen 1200sccm control tube pressure 200mbar, carry out to the post-depositional silicon wafer of low-temperature and low-concentration phosphorus source high
Middle benefit gas concentration phosphorus source deposits 3min, concentration POCl in formation3Sedimentary 4；
(5) high temperature is without POCl3Anaerobic promotes: diffusion furnace being warming up to 870 DEG C of temperature, is passed through nitrogen 2000sccm, time
20min controls tube pressure 700mbar, and the post-depositional silicon chip surface of concentration phosphorus source forms PN junction 5 in high temperature；
(6) low temperature and high concentration POCl3Deposition: diffusion furnace is cooled to 680 DEG C, is passed through POCl31000sccm, oxygen
500sccm, nitrogen 800sccm control tube pressure 200mbar, carry out low temperature and high concentration phosphorus to step (5) treated silicon wafer
Source deposits 15min, forms high concentration POCl3Sedimentary 6；
(7) cooling boat out: quartz boat is taken out out of diffusion furnace, and the silicon wafer on quartz boat is unloaded.
Embodiment 2
(1) as depicted in figs. 1 and 2, silicon wafer pre-processes: clean simultaneously making herbs into wool for p-type original silicon chip 1, is put into quartz boat, and push away
Enter in the boiler tube of diffusion furnace；
(2) it pre-oxidizes: diffusion furnace is warming up to 700 DEG C, be passed through nitrogen 4000sccm and oxygen 4000sccm, control tube pressure
100mbar carries out pre-oxidation 12min to the silicon wafer after making herbs into wool, forms SiO2Layer 2；
(3) low-temperature and low-concentration POCl3Deposition: diffusion furnace is warming up to 710 DEG C of temperature, is passed through POCl3250sccm, oxygen
750sccm, nitrogen 1100sccm control tube pressure 100mbar, and it is heavy to carry out low-temperature and low-concentration phosphorus source to the silicon wafer after pre-oxidation
Product 4min, forms low concentration POCl3Sedimentary 3；
(4) concentration POCl in heating3Deposition: diffusion furnace is warming up to 780 DEG C of temperature, is passed through POCl3600sccm, oxygen
1500sccm, nitrogen 1300sccm control tube pressure 250mbar, carry out to the post-depositional silicon wafer of low-temperature and low-concentration phosphorus source high
Middle benefit gas concentration phosphorus source deposits 2min, concentration POCl in formation3Sedimentary 4；
(5) high temperature is without POCl3Anaerobic promotes: diffusion furnace being warming up to 900 DEG C, is passed through nitrogen 3000sccm, time 18min, is controlled
Tube pressure 800mbar processed, the post-depositional silicon chip surface of concentration phosphorus source forms PN junction 5 in high temperature；
(6) low temperature and high concentration POCl3Deposition: diffusion furnace is cooled to 710 DEG C, is passed through POCl3950sccm, oxygen 550sccm,
Nitrogen 900sccm controls tube pressure 250mbar, carries out low temperature and high concentration phosphorus source deposition to step (5) treated silicon wafer
13min forms high concentration POCl3Sedimentary 6；
(7) cooling boat out: quartz boat is taken out out of diffusion furnace, and the silicon wafer on quartz boat is unloaded.
Embodiment 3
(1) as depicted in figs. 1 and 2, silicon wafer pre-processes: clean simultaneously making herbs into wool for p-type original silicon chip 1, is put into quartz boat, and push away
Enter in the boiler tube of diffusion furnace；
(2) it pre-oxidizes: diffusion furnace is warming up to 720 DEG C, be passed through nitrogen 5000sccm and oxygen 5000sccm, control tube pressure
150mbar carries out pre-oxidation 15min to the silicon wafer after making herbs into wool, forms SiO2Layer 2；
(3) low-temperature and low-concentration POCl3Deposition: 720 DEG C of furnace temperature of diffusion is kept, POCl is passed through3200sccm, oxygen 800sccm,
Nitrogen 1200sccm controls tube pressure 150mbar, carries out low-temperature and low-concentration phosphorus source to the silicon wafer after pre-oxidation and deposits 3min,
Form low concentration POCl3Sedimentary 3；
(4) concentration POCl in heating3Deposition: diffusion furnace is warming up to 820 DEG C, is passed through POCl3500sccm, oxygen
1200sccm, nitrogen 1500sccm control tube pressure 200mbar, carry out to the post-depositional silicon wafer of low-temperature and low-concentration phosphorus source high
Middle benefit gas concentration phosphorus source deposits 1min, concentration POCl in formation3Sedimentary 4；
(5) high temperature is without POCl3Anaerobic promotes: diffusion furnace being warming up to 910 DEG C, is passed through nitrogen 3500sccm, time 15min, is controlled
Tube pressure 900mbar processed, the post-depositional silicon chip surface of concentration phosphorus source forms PN junction 5 in high temperature；
(6) low temperature and high concentration POCl3Deposition: diffusion furnace is cooled to 720 DEG C, is passed through POCl3900sccm, oxygen 700sccm,
Nitrogen 1000sccm controls tube pressure 200mbar, carries out low temperature and high concentration phosphorus source deposition to step (5) treated silicon wafer
10min forms high concentration POCl3Sedimentary 6；
(7) cooling boat out: quartz boat is taken out out of diffusion furnace, and the silicon wafer on quartz boat is unloaded.
Comparative example 1
(1) silicon wafer pre-processes: clean simultaneously making herbs into wool for p-type original silicon chip, is put into quartz boat, and be pushed into the boiler tube of diffusion furnace
It is interior；
(2) it pre-oxidizes: diffusion furnace is warming up to 770 DEG C, be passed through nitrogen 1000sccm and oxygen 1500sccm, control tube pressure
500mbar carries out pre-oxidation 5min to the silicon wafer after making herbs into wool, forms SiO2Layer；
(3)POCL3Deposition: it is kept for 800 DEG C of temperature, is passed through POCl31200sccm, oxygen 10000sccm, nitrogen 2000sccm,
Tube pressure 200mbar is controlled, phosphorus source is carried out to the silicon wafer after pre-oxidation and deposits 15min；
(4) high temperature promotes: diffusion furnace being warming up to 870 DEG C, is passed through nitrogen 2000sccm, time 30min, controls tube pressure
500mbar, the post-depositional silicon chip surface of concentration phosphorus source forms PN junction in high temperature；
(5)POCL3Deposition: diffusion furnace is cooled to 820 DEG C, is passed through POCl31500sccm, oxygen 1000sccm, nitrogen
1500sccm, controls tube pressure 500mbar, time 30min, and silicon chip surface forms POCl3Sedimentary；
(6) cooling boat out: quartz boat is taken out out of diffusion furnace, and the silicon wafer on quartz boat is unloaded.
Comparative example 2
Comparative example 2 the difference from embodiment 1 is that, in step (2), Pre oxidation be 770 DEG C, the time be 7min (present invention
680~720 DEG C, 10~15min of time), remaining processing step and parameter are identical.
Comparative example 3
Comparative example 3 the difference from embodiment 1 is that, POCl in step (3)3Volume flow be 350sccm (present invention 200~
300sccm), remaining processing step and parameter are identical.
Comparative example 4
Comparative example 4 the difference from embodiment 1 is that, POCl in step (6)3Body flow be 1500sccm, be passed through time 30min
(present invention 900~1000sccm, 10~15min of time), remaining processing step and parameter are identical.
The performance of the obtained silicon wafer of diffusion technique by embodiment 1-3 and comparative example 1-4 is detected respectively, as a result
It is as shown in table 1:
1. results of property of table
| Performance indicator | Uoc | Isc | Rs | FF | Eta |
| Embodiment 1 | 0.6792 | 9.957 | 0.00226 | 80.68 | 22.33% |
| Embodiment 2 | 0.6793 | 9.966 | 0.00233 | 80.52 | 22.31% |
| Embodiment 3 | 0.6786 | 9.946 | 0.002261 | 80.84 | 22.33% |
| Comparative example 1 | 0.6774 | 9.977 | 0.00250 | 80.29 | 22.21% |
| Comparative example 2 | 0.6773 | 9.994 | 0.00261 | 80.16 | 22.21% |
| Comparative example 3 | 0.6776 | 9.966 | 0.00235 | 80.44 | 22.23% |
| Comparative example 4 | 0.6779 | 9.969 | 0.00242 | 80.39 | 22.24% |
As can be seen from Table 1, diffusion technique of the invention is a complete technical solution, and each step, technological parameter are mutually connected
It is dynamic, it is indispensable.For example, Pre oxidation must be strictly controlled at 680~720 DEG C, 10~15min of time, if oxidizing temperature
Excessively high, the time is too low, although the time can be saved the process, the SiO of growth2Layer, uniformity is poor, not fine and close enough, will lead to expansion
Sheet resistance uniformity is poor after dissipating；Low-temperature and low-concentration phosphorus source deposition process must control POCl3Volume flow be 200~300sccm,
Time control is in 3~5min, if volume flow is higher than 300sccm, the time is greater than 5min, will lead to silicon chip surface phosphorus source concentration mistake
Height, influences the Uoc of cell piece, improve the transfer efficiency of cell piece can not.Low temperature and high concentration POCl3Deposition process is necessary
Control POCl3Volume flow is 900~1000sccm, and time control is in 10~15min, if volume flow is higher than 1000sccm,
Time is greater than 15min, will lead to silicon chip surface and deposits excessive phosphorosilicate glass, keeps emitter region phosphorus impurities excessive, increases few
Son is compound, influences the promotion of cell piece Uoc.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the present invention in any form, and is not surpassing
There are also other variations and modifications under the premise of technical solution documented by claim out.
Claims (10)
1. a kind of regionality stratified sedimentation diffusion technique, which comprises the following steps:
(1) by after the cleaning of p-type original silicon chip, making herbs into wool, it is put into quartz boat, and be pushed into the boiler tube of diffusion furnace；
(2) diffusion furnace is warming up to 680~720 DEG C, is passed through nitrogen and oxygen, the silicon wafer after making herbs into wool is pre-oxidized；
(3) low concentration POCl is passed through into diffusion furnace3, nitrogen and oxygen, low-temperature and low-concentration phosphorus source is carried out to the silicon wafer after pre-oxidation
Deposition；
(4) diffusion furnace is warming up to 730~820 DEG C, is passed through middle concentration POCl3, nitrogen and oxygen, it is heavy to low-temperature and low-concentration phosphorus source
Silicon wafer after product carries out concentration phosphorus source deposition in high temperature；
(5) diffusion furnace is warming up to 850~920 DEG C, is passed through nitrogen, the post-depositional silicon chip surface of concentration phosphorus source is formed in high temperature
PN junction；
(6) diffusion furnace is cooled to 680~720 DEG C, is passed through high concentration POCl3, nitrogen and oxygen, to step (5) treated silicon
Piece carries out low temperature and high concentration phosphorus source deposition；
(7) by diffusion furnace cooling down, quartz boat is released, by step (6) treated silicon chip extracting.
2. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that described in step (2)
The volume flow of oxygen is 3000~5000sccm；The volume flow of the nitrogen is 3000~5000sccm.
3. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that in step (2), pre- oxygen
Tube pressure control is in 50~150mbar during change；Preoxidation time is controlled in 10~15min.
4. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that described in step (3)
Low concentration POCl3Volume flow is 200~300sccm；The volume flow of the oxygen is 700~800sccm, the nitrogen
Volume flow is 1000~1200sccm.
5. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that in step (3), low temperature
Tube pressure control is in 50~150mbar in low concentration phosphorus source deposition process；The control of low-temperature and low-concentration phosphorus source sedimentation time 3~
5min。
6. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that described in step (4)
Middle concentration POCl3Volume flow is 500~700sccm；The volume flow of the oxygen is 1000~1200sccm；The nitrogen
Volume flow be 1200~1500sccm.
7. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that in step (4), high temperature
Tube pressure control is in 200~300mbar in middle concentration phosphorus source deposition process；The control of concentration phosphorus source sedimentation time is 1 in high temperature
~3min.
8. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that described in step (5)
The volume flow of nitrogen is 2000~3500sccm；Tube pressure is controlled in 700~900mbar；Form the time control of PN junction
In 15~20min.
9. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that described in step (6)
High concentration POCl3Volume flow is 900~1000sccm；The volume flow of the oxygen is 500~700sccm, the nitrogen
Volume flow be 800~1000sccm.
10. a kind of regional stratified sedimentation diffusion technique according to claim 1, which is characterized in that low in step (6)
Tube pressure control is in 200~300mbar in warm high concentration phosphorus source deposition process；The control of low temperature and high concentration phosphorus source sedimentation time exists
10~15min.
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