CN109087954A - A kind of silicon carbide drift step recovery diode - Google Patents
A kind of silicon carbide drift step recovery diode Download PDFInfo
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- CN109087954A CN109087954A CN201810961593.6A CN201810961593A CN109087954A CN 109087954 A CN109087954 A CN 109087954A CN 201810961593 A CN201810961593 A CN 201810961593A CN 109087954 A CN109087954 A CN 109087954A
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- silicon carbide
- base area
- recovery diode
- step recovery
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 48
- 238000011084 recovery Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 5
- 238000009825 accumulation Methods 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000005086 pumping Methods 0.000 abstract description 15
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
The present invention relates to power semiconductor technologies, in particular to a kind of silicon carbide drift step recovery diode.The present invention is to conventional p+‑p‑n0‑n+The n of silicon carbide drift step recovery diode0Base area is transformed, by by the n of Uniform Doped0N-type staged varying doping base area 3 is changed into base area, it is built in field from bottom to top to introduce direction in N-type base area, drift step recovery diode pulsed discharge the backward pumping stage, so that the minority carrier hole in N-type base area is extracted faster, and earlier be accelerated to saturated velocity, so that the time in backward pumping stage reduces, so that the voltage change ratio in the voltage pulse forward position formed in the load in pulse discharge loop is bigger, the time is shorter.
Description
Technical field
The present invention relates to a kind of semiconductor switch diode, in particular to a kind of silicon carbide drift step recovery diode.
Background technique
Drift step recovery diode (Drift step recovery diodes, abbreviation DSRD) is that a kind of semiconductor is opened
Diode is closed, is proposed by Russian Ioffe physical technique research institute, ultra wide band (Ultra Wide Band, letter are generally used for
Claim UWB) pulse signal source, it can achieve the nanosecond even switch time of picosecond, have high efficiency, high reliability, structure tight
The features such as gathering and be light-weight, therefore used in a variety of pulse signal sources as Primary Component.
In several kilovolts even tens kilovolts of nanosecond pulse system, for single silicon substrate DSRD device, due to drift
It is very big to move area's thickness, has been unable to satisfy the time requirement of pulse front edge, multiple devices in series is needed to use, this greatly increases
The volume of system.Broad stopband carbofrax material has the forbidden bandwidth higher than silicon materials, saturation carrier velocity, thermal conductivity and faces
Boundary's breakdown electric field, so that the performance of silicon carbide DSRD device is significantly better than silicon DSRD, thus in same voltage class and pulse
Between in desired pulse system, the serial number of silicon carbide DSRD is much smaller than silicon DSRD, is greatly saved the volume of system.But
It is that, due to the limitation of the state of the art, the carrier mobility and carrier lifetime of carbofrax material are lower, so that often
Non- speed saturation stage of the silicon carbide DSRD device of rule in the backward pumping stage of pulsed discharge, the pumping in minority carrier hole
Take speed slower, so as to cause voltage pulse leading edge time is long, voltage pulse peak value is low, silicon carbide DSRD power consumption is big, it is difficult to fill
The advantage of carbofrax material is waved in distribution, limits the raising of the performance of device.
Summary of the invention
The technical problem to be solved by the present invention is to pass through the internal structure for changing silicon carbide drift step recovery diode, with
Solve the problems, such as that voltage pulse leading edge time is long, voltage pulse peak value is low, silicon carbide drift step recovery diode power consumption is big.
Technical solution of the present invention: a kind of silicon carbide drift step recovery diode, as shown in Fig. 2, a kind of silicon carbide floats
Move step-recovery diode, structure cell from bottom to top be respectively including N-type Ohm contact electrode 1, N-type silicon carbide substrates 2,
N-type staged varying doping base area 3, p-type plasma accumulation layer 4, p-type heavy doping anode 5, p-type Ohm contact electrode 6；
The N-type silicon carbide substrates 2 include N+ substrate layer 21 and N+buffer layer 22；
The N-type staged varying doping base area 3 includes the N-type silicon carbide epitaxial layers of n-layer (n >=2) different levels of doping, often
The doping concentration changing rule of layer N-type epitaxy layer is successively to successively decrease from bottom to top, shows as stepped concentration distribution；
The solution of the present invention, compared to conventional p+-p-n0-n+Silicon carbide drift step recovery diode, carbon of the invention
The n of SiClx drift step recovery diode0Base area uses the staged varying doping base that doping concentration gradually decreases from bottom to top
Area.
Beneficial effects of the present invention are that the present invention is to conventional p+-p-n0-n+The n of silicon carbide drift step recovery diode0
Base area is transformed, by by the n of Uniform Doped0N-type staged varying doping base area 3 is changed into base area, thus in N-type base area
Inside introducing direction is built in field from bottom to top, drift step recovery diode pulsed discharge backward pumping rank
Section is accelerated to saturated velocity so that the minority carrier hole in N-type base area is extracted faster, and earlier, so that instead
It is reduced to the time in pumping stage, so that the voltage in the voltage pulse forward position formed in the load in pulse discharge loop becomes
Rate is bigger, the time is shorter.N-type staged varying doping base region structure of the invention uses conventional silicon carbide epitaxy technique, with
Conventional p+-p-n0-n+The fabrication processing of silicon carbide drift step recovery diode is compared, and mixing of being delayed outside need to be only changed
Miscellaneous condition, without additionally developing new process.
Detailed description of the invention
Fig. 1 is conventional silicon carbide DSRD structure cell schematic diagram；
Fig. 2 is DSRD structure cell schematic diagram of the invention；
Fig. 3 is DSRD pulse-generating circuit schematic diagram；
Fig. 4 is the device inside cavity speed comparison diagram of conventional DSRD and DSRD of the present invention at initial stage in backward pumping stage；
Fig. 5 is the device inside hole concentration comparison diagram of conventional DSRD and DSRD of the present invention at initial stage in backward pumping stage；
Fig. 6 is that conventional DSRD and DSRD of the present invention are compared by the voltage pulse waveforms that pulse-generating circuit exports.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing
As shown in Fig. 2, silicon carbide drift step recovery diode of the invention, structure cell is respectively to wrap from bottom to top
Include N-type Ohm contact electrode 1, N-type silicon carbide substrates 2, N-type staged varying doping base area 3, p-type plasma accumulation layer 4, p-type weight
Adulterate anode 5, p-type Ohm contact electrode 6；The N-type silicon carbide substrates 2 include N+ substrate layer 21 and N+buffer layer 22；Institute
State the N-type silicon carbide epitaxial layers that N-type staged varying doping base area 3 includes n-layer (n >=2) different levels of doping, every layer of N-type extension
The doping concentration changing rule of layer is successively to successively decrease from bottom to top, shows as stepped concentration distribution；It is characterized in that, comparing
In conventional p+-p-n0-n+Silicon carbide drift step recovery diode, silicon carbide drift step recovery diode of the invention
n0Base area uses the staged varying doping base area that doping concentration gradually decreases from bottom to top.
As shown in Figure 1, for conventional p+-p-n0-n+Silicon carbide drift step recovery diode.As shown in Fig. 2, being this hair
Bright silicon carbide drift step recovery diode.The present invention and conventional p+-p-n0-n+Silicon carbide drift step recovery diode
The different place of structure is that the present invention is to n0Base area is transformed, by by the n of Uniform Doped0N-type rank is changed into base area
Ladder type varying doping base area 3, so that introducing direction in N-type base area is built in field from bottom to top, in drift step recovery
Diode is in the backward pumping stage of pulsed discharge, so that the minority carrier hole in N-type base area is extracted faster, and more
Early is accelerated to saturated velocity, so that the time in backward pumping stage reduces, so that the load in pulse discharge loop
The voltage change ratio in the voltage pulse forward position of upper formation is bigger, the time is shorter.N-type staged varying doping base region structure of the invention
Using conventional silicon carbide epitaxy technique, with conventional p+-p-n0-n+The manufacture craft of silicon carbide drift step recovery diode
Process is compared, and only need to change the doping condition being delayed outside, without additionally developing new process.
Silicon carbide drift step recovery diode provided by the invention, its working principles are as follows:
In structure cell as shown in Figure 2, when silicon carbide DSRD device is in the forward pumping stage of pulsed discharge, just
It is respectively stored in p-type carrier accumulation layer 4 and N-type base area 3 to the carrier inside current injection device；Work as silicon carbide
When DSRD device is in the backward pumping stage of pulsed discharge, the minority carrier stored in silicon carbide DSRD device is extracted,
Reverse current is formed, and in the reverse current decline stage, the electric current in energy storage original part is transferred on load resistance, thus negative
It carries and forms voltage pulse on resistance, is i.e. the extraction speed of minority carrier determines the voltage pulse forward position of pulse system output
Leading-edge pulse time, voltage build-up rate and voltage peak.Wherein, since 3 width of N-type base area is larger, so what is wherein stored lacks
The extraction time of number carrier hole becomes one of the principal element for influencing leading-edge pulse time.N-type staged of the invention
Varying doping base area 3, it is built in field from bottom to top that direction is introduced in N-type base area, in silicon carbide DSRD device in pulse
The backward pumping stage of electric discharge, being accelerated to so that the minority carrier hole in N-type base area is extracted faster, and earlier
Saturated velocity, so that the time in backward pumping stage reduces, so that the voltage formed in the load in pulse discharge loop
The voltage change ratio of pulse front edge is bigger, the time is shorter, while also reducing the energy loss on silicon carbide DSRD device, from
And it is transformed into more energy in load, increase peak impulse voltage, improves the efficiency of pulse system.
It is the conventional p of 12kV with same pressure resistance+-p-n0-n+Silicon carbide DSRD device (base doping concentration and with a thickness of
7e14cm-3/ 80 μm) (the N-type staged varying doping base area number of plies takes n=3, base area concentration with silicon carbide DSRD device of the invention
And thickness is respectively 1.5e15cm from top to bottom-3/ 30 μm, 1e15cm-3/ 30 μm, 2e14cm-3/ 20 μm) carry out emulation comparison, two
For a device other than base doping mode is different, the other parameters including device size and pressure voltage are all the same, electric discharge
Circuit and simulated conditions are also identical, and discharge circuit is as shown in figure 3, output voltage peak value is all 11kV.Such as Fig. 4 and Fig. 5 institute
It is shown as the device inside cavity speed and hole concentration distribution at initial stage in backward pumping stage (225.7ns moment shown in fig. 6), it can
To find out, the minority carrier inside synchronization, silicon carbide DSRD device N-type base area of the invention close to PN junction side is empty
Cave speed is greater than conventional device, although the cavity speed far from PN junction side decreases, but the area far from PN junction side
The concentration in domain minority carrier hole well below close to PN junction side region, so to overall hole extract influence compared with
It is small, so that allowing for overall minority carrier hole can be extracted faster, reduce the time in voltage pulse forward position.Such as
Fig. 6 show the voltage waveform of pulse system output, it can be seen that and the leading-edge pulse time of silicon carbide DSRD of the invention is shorter,
It is substantially better than conventional p+-p-n0-n+Silicon carbide DSRD device.Therefore, silicon carbide DSRD device of the present invention is suitable for ultra wide band system
System.
Claims (1)
1. a kind of silicon carbide drift step recovery diode, structure cell includes the N-type Europe being cascading from bottom to top
Nurse contacts electrode (1), N-type silicon carbide substrates (2), N-type staged varying doping base area (3), p-type plasma accumulation layer (4), p-type
Heavy doping anode (5), p-type Ohm contact electrode (6)；
The N-type silicon carbide substrates (2) include N+ substrate layer (21) and the N+buffer layer for being located at N+ substrate layer (21) upper surface
(22)；
The N-type staged varying doping base area (3) includes the N-type silicon carbide epitaxial layers of n-layer different levels of doping, and n >=2, often
The doping concentration changing rule of layer N-type epitaxy layer is to successively decrease from bottom to top, shows as stepped concentration distribution.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810961593.6A CN109087954A (en) | 2018-08-22 | 2018-08-22 | A kind of silicon carbide drift step recovery diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810961593.6A CN109087954A (en) | 2018-08-22 | 2018-08-22 | A kind of silicon carbide drift step recovery diode |
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| Publication Number | Publication Date |
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| CN109087954A true CN109087954A (en) | 2018-12-25 |
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| CN201810961593.6A Pending CN109087954A (en) | 2018-08-22 | 2018-08-22 | A kind of silicon carbide drift step recovery diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563320A (en) * | 2020-11-29 | 2021-03-26 | 中国电子科技集团公司第五十五研究所 | Method for improving performance of high-voltage drift step recovery device |
| CN113009425A (en) * | 2021-02-23 | 2021-06-22 | 电子科技大学 | Pulse compression structure based on SiC DSRD device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956822A (en) * | 2011-08-19 | 2013-03-06 | 三星电子株式会社 | Nonvolatile memory elements and memory devices including same |
| CN104201211A (en) * | 2014-08-27 | 2014-12-10 | 温州大学 | Base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode manufactured on 4H type single crystal silicon carbide epitaxial layer and process |
| CN106960788A (en) * | 2017-03-31 | 2017-07-18 | 华中科技大学 | A kind of preparation method of drift step recovery diode and products thereof |
-
2018
- 2018-08-22 CN CN201810961593.6A patent/CN109087954A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956822A (en) * | 2011-08-19 | 2013-03-06 | 三星电子株式会社 | Nonvolatile memory elements and memory devices including same |
| CN104201211A (en) * | 2014-08-27 | 2014-12-10 | 温州大学 | Base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode manufactured on 4H type single crystal silicon carbide epitaxial layer and process |
| CN106960788A (en) * | 2017-03-31 | 2017-07-18 | 华中科技大学 | A kind of preparation method of drift step recovery diode and products thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563320A (en) * | 2020-11-29 | 2021-03-26 | 中国电子科技集团公司第五十五研究所 | Method for improving performance of high-voltage drift step recovery device |
| CN113009425A (en) * | 2021-02-23 | 2021-06-22 | 电子科技大学 | Pulse compression structure based on SiC DSRD device |
| CN113009425B (en) * | 2021-02-23 | 2022-08-05 | 电子科技大学 | Pulse compression structure based on SiC DSRD device |
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Application publication date: 20181225 |