CN108336198B - Light emitting diode epitaxial wafer and manufacturing method thereof - Google Patents
Light emitting diode epitaxial wafer and manufacturing method thereof Download PDFInfo
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- CN108336198B CN108336198B CN201711429144.9A CN201711429144A CN108336198B CN 108336198 B CN108336198 B CN 108336198B CN 201711429144 A CN201711429144 A CN 201711429144A CN 108336198 B CN108336198 B CN 108336198B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 181
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 230000012010 growth Effects 0.000 claims description 47
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 40
- 239000011777 magnesium Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The multiple quantum well layer of the light emitting diode epitaxial wafer comprises multiple quantum well layers and multiple quantum barrier layers which grow alternately in a periodic mode, 1-5 quantum barrier layers which are closest to the insertion layer in the multiple quantum well layer are first quantum barrier layers, Mg is doped in all the first quantum barrier layers, and the doping concentration of the Mg is 1017～1019/cm3Mg can improve the migration capability of holes, and meanwhile, the conduction band energy level close to the P-type layer in the multi-quantum well layer can be increased, so that electrons are prevented from migrating to the P-type layer, the effective distribution of the electrons and the holes is improved, the recombination efficiency of the electrons and the holes is improved, and the luminous efficiency of the LED is improved. The thickness of each first quantum barrier layer is 3-20 nm, and the thickness of each electron barrier layer is 0-30 nm. Due to the increase of the concentration of the holes, the blocking of electrons can be reduced, so that the thickness of the electron blocking layer can be reduced, and the influence of blocking hole injection caused by introducing the electron blocking layer is reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its manufacturing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is as great influence in information photoelectron new industry
The new product of power has the characteristics that small in size, long service life, various colors are colorful, low energy consumption, is widely used in illumination, shows
The fields such as display screen, signal lamp, backlight, toy.
Existing LED includes the epitaxial layer of substrate and setting on substrate, and epitaxial layer includes being cascading on substrate
Buffer layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic barrier layer, high temperature P-type layer and p-type contact layer.
Wherein, electronic barrier layer with a thickness of 40~100nm.N-type layer and P-type layer mostly use GaN material to be made, electronics and P in N-type layer
Hole in type layer is in active layer recombination luminescence.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since the mobility of the electrons and holes in GaN material differs nearly an order of magnitude, most LED components can be in volume
Electronic barrier layer is introduced between sub- trap active layer and P-type layer to stop electron transfer, but due to the polarization of storeroom and stress
Effect, a high Valence-band Offsets obstruction hole injection, in addition to this, most multiple quantum wells can be generated by introducing electronic barrier layer
Quantum barrier layer in layer is intrinsic barrier layer, and the valence-band level of intrinsic barrier layer is apparently higher than the energy band of the quantum well layer of doping, hole
It equally can not effective mobility.
Summary of the invention
Transfer ability in order to solve the problems, such as hole in the prior art is low, and the embodiment of the invention provides one kind luminous two
Pole pipe epitaxial wafer and its manufacturing method.The technical solution is as follows:
On the one hand, the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice include substrate,
And stack gradually buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics over the substrate
Barrier layer, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and amount of multiple period alternating growths
Sub- barrier layer,
It near 1~5 quantum barrier layer of the insert layer is the first quantum barrier layer in the multiple quantum well layer, described the
Doped with Mg in one quantum barrier layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum barrier layer
Degree be 3~20nm, the electronic barrier layer with a thickness of 0~30nm；
It near 3 quantum barrier layers of the insert layer is the first quantum barrier layer in the multiple quantum well layer, 3 described the
The thickness of one quantum barrier layer is 12nm, the electronic barrier layer with a thickness of 20nm；
Alternatively, in the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, according to
8nm, 16nm and 12nm are followed successively by by the thickness as far as close direction, 3 first quantum barrier layers apart from the insert layer, institute
State electronic barrier layer with a thickness of 0.
Further, the insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in the insert layer17~
1019/cm3。
Further, the electronic barrier layer is AlGaN layer or the electronic barrier layer is AlGaN/GaN, AlGaN/
InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
On the other hand, the present invention provides a kind of manufacturing method of LED epitaxial slice, the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics resistance on substrate
Barrier, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and quantum of multiple period alternating growths
Barrier layer, which is characterized in that
Successively grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics resistance on substrate
Barrier, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and quantum of multiple period alternating growths
Barrier layer near 1~5 quantum barrier layer of the insert layer is the first quantum barrier layer in the multiple quantum well layer, described first
Doped with Mg in quantum barrier layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum barrier layer
For 3~20nm, the electronic barrier layer with a thickness of 0~30nm；
It near 3 quantum barrier layers of the insert layer is the first quantum barrier layer in the multiple quantum well layer, 3 described the
The thickness of one quantum barrier layer is 12nm, the electronic barrier layer with a thickness of 20nm；
Alternatively, in the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, according to
8nm, 16nm and 12nm are followed successively by by the thickness as far as close direction, 3 first quantum barrier layers apart from the insert layer, institute
State electronic barrier layer with a thickness of 0.
Further, the insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in the insert layer17~
1019/cm3。
Further, the electronic barrier layer is AlGaN layer or the electronic barrier layer is AlGaN/GaN, AlGaN/
InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
Technical solution provided in an embodiment of the present invention has the benefit that
By adulterating Mg, and the doping of Mg in 1~5 quantum barrier layer of electronic barrier layer in multiple quantum well layer
Concentration is 1017~1019/cm3, mixing a small amount of Mg can be improved the transfer ability in hole, while can also draw high multiple quantum wells
Conduction level in layer at P-type layer stops electronics to migrate to P-type layer, improves effective distribution of electrons and holes, improves electricity
The combined efficiency of son and hole, to improve the luminous efficiency of LED.And since the concentration in hole increases, the electronics for needing to stop
Quantity reduce, so as to reduce the thickness of electronic barrier layer so that electronic barrier layer with a thickness of 0~30nm, with existing skill
Electronic barrier layer is compared in art with a thickness of 40~100nm, and the thickness of electronic barrier layer greatly reduces in the present invention, it might even be possible to
Electronic barrier layer is removed, the influence of obstruction hole injection caused by introducing electronic barrier layer is not only reduced, and is substantially reduced
LED integral thickness.And the thickness in multiple quantum well layer near 1~5 quantum barrier layer of electronic barrier layer be respectively 3~
20nm, by adjusting in multiple quantum well layer near the thickness of 1~5 quantum barrier layer of electronic barrier layer, adjustable electronics
Distribution in multiple quantum well layer, to improve the recombination luminescence efficiency of electrons and holes.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of LED epitaxial slice, Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer, as shown in Figure 1, the LED epitaxial slice includes substrate 1 and stacks gradually
In the buffer layer 2 of substrate 1, GaN layer 3, N-type layer 4, multiple quantum well layer 5, insert layer 6, low temperature P-type layer 7, electronic barrier layer 8, height
Warm P-type layer 9, p-type contact layer 10.Multiple quantum well layer 5 includes the quantum well layer 51 and quantum barrier layer 52 of multiple period alternating growths.
In multiple quantum well layer 5 near 1~5 quantum barrier layer of insert layer 6 be the first quantum barrier layer 53 namely Multiple-quantum
Well layer 5 includes 1~5 the first quantum barrier layer 53, and doped with Mg in each first quantum barrier layer 53, and the doping concentration of Mg is
1017~1019/cm3, each first quantum barrier layer 53 with a thickness of 3~20nm, electronic barrier layer 8 with a thickness of 0~30nm.
The embodiment of the present invention adulterates Mg in 1~5 quantum barrier layer by electronic barrier layer close in multiple quantum well layer,
And the doping concentration of Mg is 1017~1019/cm3, mixing a small amount of Mg can be improved the transfer ability in hole, while can also draw
Conduction level in high multiple quantum well layer at P-type layer stops electronics to migrate to P-type layer, improves the effective of electrons and holes
Distribution, improves the combined efficiency of electrons and holes, to improve the luminous efficiency of LED.And since the concentration in hole increases, need
The electron amount of blocking is reduced, so as to reduce the thickness of electronic barrier layer so that electronic barrier layer with a thickness of 0~
30nm, compared with electronic barrier layer in the prior art is with a thickness of 40~100nm, the present invention in electronic barrier layer thickness significantly
Reduce, it might even be possible to electronic barrier layer is removed, the influence of obstruction hole injection caused by introducing electronic barrier layer is not only reduced,
And greatly reduce LED integral thickness.And close to the thickness of 1~5 quantum barrier layer of electronic barrier layer in multiple quantum well layer
Respectively 3~20nm can be adjusted by adjusting in multiple quantum well layer close to the thickness of 1~5 quantum barrier layer of electronic barrier layer
Distribution of the whole electronics in multiple quantum well layer, to improve the recombination luminescence efficiency of electrons and holes.
Further, insert layer 6 is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in insert layer 617~1019/cm3。
By mixing a small amount of Mg in insert layer 6, the injection in hole is can be improved in Mg, while can also draw high the conduction band of insert layer 6
Energy level stops electronics to migrate to low temperature P-type layer 7, improves the combined efficiency of electrons and holes.
Preferably, insert layer 6 with a thickness of 3~20nm.If the thickness of insert layer 6 is lower than 3nm, blocking electricity can not be played
The effect of son will affect being efficiently injected into for hole if the thickness of insert layer 6 is higher than 20nm.
In the present embodiment, the thickness of each first quantum barrier layer 53 can be set as according to the actual situation identical, or not
Together.By the thickness of each first quantum barrier layer 53 of adjusting, i.e., the distribution of the carrier in changeable multiple quantum well layer 5, thus
Improve the combined efficiency of electrons and holes.
Wherein, multiple quantum well layer 5 can be the InGaN quantum well layer and GaN quantum for including 8~10 period alternating growths
Barrier layer, wherein each InGaN quantum well layer with a thickness of 2.5nm, each GaN quantum barrier layer with a thickness of 12nm.
Optionally, as shown in Figure 1, in multiple quantum well layer 5 near 3 quantum barrier layers of insert layer 6 be the first quantum build
Layer 53, that is, multiple quantum well layer 5 includes 3 the first quantum barrier layers, the thickness of 3 the first quantum barrier layers 53 is 12nm, and 3
Mixed with Mg in first quantum barrier layer 53, and the doping concentration of Mg is 1017~1019/cm3.At this time electronic barrier layer 8 with a thickness of
20nm.Cooperate the doping concentration of Mg in 3 the first quantum barrier layers 53 by the thickness of 3 the first quantum barrier layers 53 of setting, it can be with
So that electronic barrier layer 8 with a thickness of 20nm, compared with the prior art in electronic barrier layer 8 with a thickness of 40~100nm for,
The thickness of electronic barrier layer 8 greatly reduces, thus reduce the influence of obstruction hole injection caused by introducing electronic barrier layer 8,
Reduce the integral thickness of LED.
At this point, the thickness of 3 the first quantum barrier layers 53 is 12nm, during growing 3 the first quantum barrier layer 53
Without changing the thickness of each first quantum barrier layer 53, convenient for the production of light emitting diode.
Optionally, electronic barrier layer 8 can be AlGaN layer or electronic barrier layer 8 be AlGaN/GaN, AlGaN/InGaN,
AlInGaN/GaN or AlGaN/InAlN superlattice structure.
It preferably, is the first quantum barrier layer 53, Ye Jiduo near 3 quantum barrier layers of insert layer 6 in multiple quantum well layer 5
Quantum well layer 5 includes 3 the first quantum barrier layers, according to apart from insert layer by as far as close direction, 3 the first quantum barrier layers 53
Thickness is followed successively by 8nm, 16nm and 12nm namely 3 the first quantum barrier layers 53,1 first quantum nearest apart from insert layer 6
Barrier layer 53 with a thickness of 12nm, 1 first quantum barrier layer 53 farthest apart from insert layer 6 with a thickness of 8nm, interjacent 1
A first quantum barrier layer 53 with a thickness of 16nm.The thickness of electronic barrier layer 8 can be 0 at this time.Namely outside the light emitting diode
Electronic barrier layer 8 can be not provided with by prolonging piece, and by adjusting the thickness of the first quantum barrier layer, Mg's mixes in the first quantum barrier layer of cooperation
It is whole thick to greatly reduce LED to eliminate the influence of obstruction hole injection caused by introducing electronic barrier layer 8 for miscellaneous concentration
Degree.
Optionally, substrate 1 can be Sapphire Substrate, with a thickness of 630-650um.Buffer layer 2 can be ALN buffer layer,
With a thickness of 5~40nm.GaN layer 3 with a thickness of 1 μm, N-type layer 4 is to mix the GaN layer of Si, with a thickness of 2um.
Optionally, low temperature P-type layer 7 is GaN layer, and growth thickness 30nm, high temperature P-type layer 9 is GaN layer, with a thickness of 20nm.
P-type contact layer 10 is the GaN layer of heavy doping Mg, with a thickness of 1.5nm.
Embodiment two
The embodiment of the invention provides a kind of manufacturing methods of LED epitaxial slice, provide suitable for embodiment one
A kind of LED epitaxial slice, Fig. 2 are a kind of manufacturing methods of LED epitaxial slice provided in an embodiment of the present invention
Flow chart, as shown in Fig. 2, the manufacturing method includes:
Step 201 pre-processes substrate.
Optionally, substrate is sapphire, with a thickness of 630~650um.
In the present embodiment, using Veeco K465i or C4MOCVD (Metal Organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) equipment realize LED growing method.Using high-purity H2(hydrogen)
Or high-purity N2(nitrogen) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, trimethyl gallium (TMGa)
And triethyl-gallium (TEGa) is used as gallium source, trimethyl indium (TMIn) is used as indium source, and silane (SiH4) is used as N type dopant, front three
Base aluminium (TMAl) is used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.Chamber pressure is 100~600torr.
Specifically, which includes:
In a hydrogen atmosphere, 5~6min of high-temperature process substrate.Wherein, reaction chamber temperature is 1000~1100 DEG C, reaction chamber
Pressure is controlled in 200~500torr.
Step 202, on substrate grown buffer layer.
Specifically, Sapphire Substrate is sputtered at PVD (Physical Vapor Deposition, physical vapor deposition)
The ALN buffer layer of one layer of 5~40nm thickness of sputtering in furnace.
Step 203 grows GaN layer on the buffer layer.
After buffer growth, there is the substrate of ALN buffer layer to be put into MOCVD device sputtering, room temperature will be reacted
Degree is increased to 1040 °, and growth thickness is the GaN layer that 1-2 μm of high temperature undopes.
Step 204 grows N-type layer in GaN layer.
In the present embodiment, N-type layer is to mix the GaN layer of Si, with a thickness of 2 μm.When growing N-type layer, reaction chamber temperature is
1000~1100 DEG C, chamber pressure is controlled in 200~300torr.
Step 205 grows multiple quantum well layer in N-type layer.
It in the present embodiment, can first growth stress releasing layer before growth multiple quantum well layer.
Specifically, stress release layer includes the InGaN well layer and GaN barrier layer of 3 period alternating growths, wherein InGaN trap
Layer with a thickness of 2nm, growth temperature is 850~900 DEG C, growth pressure 250torr.GaN barrier layer with a thickness of 30~50nm,
Growth temperature is 850~900 DEG C, growth pressure 250torr.
Stress release layer further includes the InGaN well layer and GaN barrier layer of 6 period alternating growths, wherein the thickness of InGaN well layer
Degree is 2nm, and growth temperature is 800~850 DEG C, growth pressure 250torr.GaN barrier layer with a thickness of 10~20nm, growth temperature
Degree is 800~850 DEG C, growth pressure 250torr.
Due to including InGaN quantum well layer and GaN quantum barrier layer in multiple quantum well layer, high component is grown in GaN material
InGaN quantum well layer, higher lattice mismatch can be faced, so that the crystal quality of multiple quantum well layer is influenced, by growing
Growth stress releasing layer before multiple quantum well layer can make lattice relaxation to the relatively more suitable high component InGaN quantum well layer of growth
State.
Specifically, multiple quantum well layer is grown after having grown stress release layer, multiple quantum well layer includes 8-10 period
The InGaN quantum well layer and GaN quantum barrier layer of alternating growth, wherein InGaN quantum well layer with a thickness of 2.5nm, growth temperature
It is 780~820 DEG C, growth pressure 250torr.GaN quantum barrier layer with a thickness of 12nm, growth temperature is 800~900 DEG C,
Growth pressure is 250torr.When growth GaN quantum barrier layer is near 3 quantum barrier layers of insert layer, 3 quantum barrier layers
It is the first quantum barrier layer, the thickness of 3 the first quantum barrier layers is 12nm, and mixed with Mg, Mg in 3 the first quantum barrier layers
Doping concentration be 1017~1019/cm3.By adjusting the thickness of the first quantum barrier layer, Mg's mixes in the first quantum barrier layer of cooperation
It is whole thick to greatly reduce LED to eliminate the influence of obstruction hole injection caused by introducing electronic barrier layer for miscellaneous concentration
Degree.
At this point, the thickness of 3 the first quantum barrier layers is 12nm, it is not necessarily to during growing 3 the first quantum barrier layers
Change the thickness of each first quantum barrier layer, convenient for the production of light emitting diode.
Step 206 grows insert layer in multiple quantum well active layer.
In the present embodiment, insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in insert layer17~1019/
cm3.Insert layer is with a thickness of 3~20nm.When growing insert layer, growth temperature is 800~900 DEG C, and growth pressure is
250torr。
Step 207, the growing low temperature P-type layer in insert layer.
Optionally, low temperature P-type layer is GaN layer, with a thickness of 30nm.Growth temperature is 700~900 DEG C, growth pressure 150
~250torr.
Step 208 grows electronic barrier layer in low temperature P-type layer.
Optionally, electronic barrier layer is AlGaN layer, with a thickness of 20nm.Growth temperature is 900~1000 DEG C, growth pressure
For 100~600torr.
Step 209 grows high temperature P-type layer on electronic barrier layer.
Optionally, high temperature P-type layer is GaN layer, with a thickness of 20nm.Growth temperature be 980 DEG C, growth pressure be 100~
600torr。
Step 210, the growing P-type contact layer in high temperature P-type layer.
Optionally, p-type contact layer is the GaN layer of heavy doping Mg, with a thickness of 1.5nm.Growth temperature is 700~800 DEG C, raw
Long pressure is 300~600torr.
After the growth for terminating gallium nitride based LED epitaxial slice, the temperature of reaction chamber is down to
800 DEG C, annealing 10min is carried out in pure nitrogen gas atmosphere, is then down to room temperature, terminates epitaxy technique
Growth.
Embodiment three
The embodiment of the invention provides a kind of manufacturing methods of gallium nitride based LED epitaxial slice, in the present embodiment
In, multiple quantum well layer includes the InGaN quantum well layer and GaN quantum barrier layer of 8-10 period alternating growth, wherein InGaN quantum
Well layer with a thickness of 2.5nm, growth temperature is 780~820 DEG C, growth pressure 250torr.GaN quantum barrier layer with a thickness of
12nm, growth temperature are 800~900 DEG C, growth pressure 250torr.In growth GaN quantum barrier layer near insert layer
When 3 quantum barrier layers, 3 quantum barrier layers are the first quantum barrier layer, according to apart from insert layer by as far as close direction, 3
The thickness of one quantum barrier layer is followed successively by 8nm, 16nm and 12nm, and mixed with Mg in 3 the first quantum barrier layers, the doping concentration of Mg is
1017~1019/cm3.The thickness of electronic barrier layer can be 0 at this time, namely can not give birth to when making LED epitaxial slice
Long electronic barrier layer cooperates the doping concentration of Mg in the first quantum barrier layer, to disappear by adjusting the thickness of the first quantum barrier layer
Influence in addition to introducing obstruction hole injection caused by electronic barrier layer, greatly reduces LED integral thickness.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the lining
Buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic barrier layer, high temperature P-type layer and P on bottom
Type contact layer, the multiple quantum well layer include the quantum well layer and quantum barrier layer of multiple period alternating growths, which is characterized in that
In the multiple quantum well layer near 1~5 quantum barrier layer of the insert layer be the first quantum barrier layer, first amount
Doped with Mg in sub- barrier layer, and the doping concentration of Mg is 1017~1019/cm3, each first quantum barrier layer with a thickness of 3
~20nm, the electronic barrier layer with a thickness of 0~30nm；
In the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, 3 first amounts
The thickness of sub- barrier layer is 12nm, the electronic barrier layer with a thickness of 20nm；
Alternatively, in the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, according to distance
The insert layer is followed successively by 8nm, 16nm and 12nm, the electricity by the thickness as far as close direction, 3 first quantum barrier layers
Sub- barrier layer with a thickness of 0.
2. LED epitaxial slice according to claim 1, which is characterized in that the insert layer is to mix the AlGaN of Mg
Layer, the doping concentration of Mg is 10 in the insert layer17~1019/cm3。
3. LED epitaxial slice according to claim 1, which is characterized in that the electronic barrier layer is AlGaN layer,
Or the electronic barrier layer is AlGaN/GaN, AlGaN/InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
4. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic blocking on substrate
Layer, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include that the quantum well layer of multiple period alternating growths and quantum are built
Layer near 1~5 quantum barrier layer of the insert layer is the first quantum barrier layer, first amount in the multiple quantum well layer
Doped with Mg in sub- barrier layer, and the doping concentration of Mg is 1017~1019/cm3, each first quantum barrier layer with a thickness of 3
~20nm, the electronic barrier layer with a thickness of 0~30nm；
In the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, 3 first amounts
The thickness of sub- barrier layer is 12nm, the electronic barrier layer with a thickness of 20nm；
Alternatively, in the multiple quantum well layer near 3 quantum barrier layers of the insert layer be the first quantum barrier layer, according to distance
The insert layer is followed successively by 8nm, 16nm and 12nm, the electricity by the thickness as far as close direction, 3 first quantum barrier layers
Sub- barrier layer with a thickness of 0.
5. manufacturing method according to claim 4, which is characterized in that the insert layer is to mix the AlGaN layer of Mg, described to insert
The doping concentration for entering Mg in layer is 1017~1019/cm3。
6. manufacturing method according to claim 4, which is characterized in that the electronic barrier layer is AlGaN layer or the electricity
Sub- barrier layer is AlGaN/GaN, AlGaN/InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
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| CN110783432B (en) * | 2019-11-04 | 2022-02-22 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial wafer and preparation method thereof |
| CN111223764B (en) * | 2020-03-18 | 2023-06-30 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN111540814B (en) * | 2020-05-09 | 2023-03-21 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving quantum efficiency |
| CN113013303B (en) * | 2021-02-02 | 2022-06-03 | 东莞理工学院 | Ultraviolet light-emitting diode and preparation method and application thereof |
| CN114068778A (en) * | 2022-01-18 | 2022-02-18 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip, UVB chip |
| CN116504894B (en) * | 2023-06-27 | 2024-05-14 | 江西兆驰半导体有限公司 | GaN-based LED epitaxial wafer, growth process thereof and LED |
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